MUR1620GD [THINKISEMI]
16.0 Ampere Dual Doubler Polarity Ultra Fast Recovery Rectifier Diode; 16.0安培双倍增极性超快速恢复整流二极管型号: | MUR1620GD |
厂家: | Thinki Semiconductor Co., Ltd. |
描述: | 16.0 Ampere Dual Doubler Polarity Ultra Fast Recovery Rectifier Diode |
文件: | 总2页 (文件大小:229K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
MUR1620GD thru MUR1660GD
MUR1620GD thru MUR1660GD
Pb Free Plating Product
16.0 Ampere Dual Doubler Polarity Ultra Fast Recovery Rectifier Diode
Unit : inch (mm)
TO-220AB
Features
.419(10.66)
.387(9.85)
.196(5.00)
.163(4.16)
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
Fast switching for high efficiency
Low forward voltage drop
High current capability
.139(3.55)
MIN
.054(1.39)
.045(1.15)
Low reverse leakage current
High surge current capability
Application
Automotive Environment(Inverters/Converters)
ꢀ
ꢀ
ꢀ
Plating Power Supply,SMPS and UPS
Car Audio Amplifier and Sound Device System
.038(0.96)
.019(0.50)
.025(0.65)MAX
Mechanical Data
ꢀ
ꢀ
ꢀ
Case: TO-220AB Heatsink
.1(2.54)
.1(2.54)
Epoxy: UL 94V-0 rate flame retardant
Terminals: Solderable per MIL-STD-202
method 208
Polarity: As marked on diode body
Mounting position: Any
Case
Case
Case
ꢀ
ꢀ
ꢀ
Doubler
Tandem Polarity
Suffix "GD"
Negative
Common Anode
Suffix "CA"
Positive
Common Cathode
Suffix "CT"
Weight: 2.2 gram approximately
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Rating at 25oC ambient temperature unless otherwise specified.
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
UNIT
SYMBOL
MUR1620GD MUR1640GD MUR1660GD
V
V
V
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
V
RRM
RMS
200
140
200
400
280
400
600
420
600
V
Maximum DC Blocking Voltage
V
DC
Maximum Average Forward Rectified
16.0
A
A
V
IF(AV)
Current T
C
=100oC
Peak Forward Surge Current, 8.3ms single
Half sine-wave superimposed on rated load
(JEDEC method)
I
FSM
175
150
Maximum Instantaneous Forward Voltage
@ 8.0 A
V
F
0.98
1.3
1.7
Maximum DC Reverse Current @T
At Rated DC Blocking Voltage @T
J
=25oC
uA
uA
nS
10.0
250
I
R
J
=125oC
Maximum Reverse Recovery Time (Note 1)
Typical junction Capacitance (Note 2)
Typical Thermal Resistance (Note 3)
Trr
35
90
pF
oCW
C
J
R
JC
2.2
Operating Junction and Storage
Temperature Range
oC
-55 to + 150
T
J
, TSTG
NOTES : (1) Reverse recovery test conditions IF= 0.5A, IR= 1.0A, Irr = 0.25A.
(2) Measured at 1.0 MHz and applied reverse voltage of 4.0 Volts DC.
(3) Thermal Resistance junction to case.
Rev.04/2014
© 2006 Thinki Semiconductor Co.,Ltd.
Page 1/2
http://www.thinkisemi.com/
MUR1620GD thru MUR1660GD
FIG.2 - MAXIMUM NON-REPETITIVE
PEAK FORWARD SURGE CURRENT
FIG.1 - FORWARD CURRENT DERATING CURVE
16
13
10
8
200
175
150
125
100
75
Pulse Width 8.3ms
Single Half-Sire-Wave
(JEDEC Method)
6
50
4
25
60 Hz Resistive or
Inductive load
0
0
0
50
100
150
1
10
100
NUMBER OF CYCLES AT 60Hz
CASE TEMPERATURE, oC
FIG.3 - TYPICAL INSTANTANEOUS
FORWARD CHARACTERISTICS
FIG.4 - TYPICAL REVERSE CHARACTERISTICS
80
1000
MUR1620GD
TJ=125oC
MUR1640GD
100
8
10
TJ=25oC
0.1
MUR1660GD
1
TJ=25oC
PULSE WIDTH=300uS
1% DUTY CYCLE
0.01
0.1
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
0
20
40
60
80
100
INSTANTANEOUS FORWARD VOLTAGE,
VOLTS
PERCENT OF RATED PEAK REVERSE VOLTAGE,%
FIG.5 - TYPICAL JUNCTION CAPACITANCE
1000
TJ = 25oC
f = 1.0 MHZ
Vsig = 50mVp-p
100
10
0.1
1.0
4.0 10
100
REVERSE VOLTAGE, VOLTS
Rev.04/2014
© 2006 Thinki Semiconductor Co.,Ltd.
Page 2/2
http://www.thinkisemi.com/
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