MUR2040CT [THINKISEMI]
Dual Common Anode Ultra Fast Recovery Diodes;
| 型号： | MUR2040CT |
| 厂家： | 
Thinki Semiconductor Co., Ltd. |
| 描述： | Dual Common Anode Ultra Fast Recovery Diodes 局域网 功效 二极管 |
| 文件： | 总2页 (文件大小：590K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
MUR2020CTA thru MUR2060CTA
MUR2020CTA thru MUR2060CTA
Pb Free Plating Product
20.0 Ampere Dual Common Anode Ultra Fast Recovery Diodes
Unit : inch (mm)
TO-220AB
Features
.419(10.66)
.387(9.85)
.196(5.00)
.163(4.16)
.139(3.55)
MIN
¬ Fast switching for high efficiency
¬ Low forward voltage drop
¬ High current capability
¬ Low reverse leakage current
¬ High surge current capability
.054(1.39)
.045(1.15)
Mechanical Data
.038(0.96)
.019(0.50)
.025(0.65)MAX
¬ Case: TO-220AB Heatsink
¬ Epoxy: UL 94V-0 rate flame retardant
¬ Terminals: Solderable per MIL-STD-202
method 208
.1(2.54)
.1(2.54)
¬ Polarity: As marked on body
¬ Mounting position: Any
¬ Weight: 2.24 gram approximately
Case
Case
Case
Doubler
Negative
Common Anode
Suffix "CTA"
Positive
Common Cathode
Tandem Polarity
Suffix "CTD"
Suffix "CT"
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
o
Rating at 25
C ambient temperature unless otherwise specified.
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
MUR2060CT
MUR2060CTA
MUR2060CTD
MUR2020CT MUR2040CT
UNIT
SYMBOL
MUR2020CTA MUR2040CTA
MUR2020CTD MUR2040CTD
V
V
V
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
VRRM
VRMS
VDC
200
140
200
400
280
400
600
420
600
Maximum DC Blocking Voltage
Maximum Average Forward Rectified
Current TC=125oC
20.0
A
A
V
IF(AV)
Peak Forward Surge Current, 8.3ms single
Half sine-wave superimposed on rated load
(JEDEC method)
IFSM
200
175
Maximum Instantaneous Forward Voltage
@ 10.0 A
VF
IR
0.975
1.3
1.5
Maximum DC Reverse Current @TJ=25oC
At Rated DC Blocking Voltage @TJ=125oC
uA
uA
nS
10.0
250
Maximum Reverse Recovery Time (Note 1)
Typical junction Capacitance (Note 2)
Trr
CJ
35
pF
oC
120
70
Operating Junction and Storage
Temperature Range
-55 to +150
T
J
, TSTG
NOTES : (1) Reverse recovery test conditions I
F
= 0.5A, I
R
= 1.0A, Irr = 0.25A.
(2) Measured at 1.0 MHz and applied reverse voltage of 4.0 Volts DC.
Page 1/2
http://www.thinkisemi.com/
Rev.04
© 2006 Thinki Semiconductor Co.,Ltd.
MUR2020CTA thru MUR2060CTA
FIG.2 - MAXIMUM NON-REPETITIVE
PEAK FORWARD SURGE CURRENT
FIG.1 - FORWARD CURRENT DERATING CURVE
20
16
10
8
200
175
150
125
100
75
Pulse Width 8.3ms
Single Half-Sire-Wave
(JEDEC Method)
MUR2020CTA
MUR2040CTA-MUR2060CTA
6
50
4
25
60 Hz Resistive or
Inductive load
0
0
0
50
100
150
1
10
100
CASE TEMPERATURE, oC
NUMBER OF CYCLES AT 60Hz
FIG.3 - TYPICAL INSTANTANEOUS
FORWARD CHARACTERISTICS
FIG.4 - TYPICAL REVERSE CHARACTERISTICS
1000
100
MUR2020CTA
MUR2040CTA
TJ=125oC
100
10
10
MUR2060CTA
TJ=25oC
0.1
1
TJ=25oC
PULSE WIDTH=300uS
1% DUTY CYCLE
0.01
0.1
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
0
20
40
60
80
100
INSTANTANEOUS FORWARD VOLTAGE,
VOLTS
PERCENT OF RATED PEAK REVERSE VOLTAGE,%
FIG.5 - TYPICAL JUNCTION CAPACITANCE
1000
TJ = 25oC
f = 1.0 MHZ
Vsig = 50mVp-p
100
10
0.1
1.0
4.0 10
100
REVERSE VOLTAGE, VOLTS
Page 2/2
Rev.04
© 2006 Thinki Semiconductor Co.,Ltd.
http://www.thinkisemi.com/
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