MUR3060PS [THINKISEMI]
30.0 Ampere Heatsink Dual Series Connection Ultra Fast Recovery Half Bridge Rectifiers;
| 型号： | MUR3060PS |
| 厂家： | 
Thinki Semiconductor Co., Ltd. |
| 描述： | 30.0 Ampere Heatsink Dual Series Connection Ultra Fast Recovery Half Bridge Rectifiers |
| 文件： | 总3页 (文件大小：1043K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
MUR3020PS thru MUR3060PS
MUR3020PS/MUR3040PS/MUR3060PS
Pb Free Plating Product
30.0 Ampere Heatsink Dual Series Connection Ultra Fast Recovery Half Bridge Rectifiers
TO-3PN
Features
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Fast switching for high efficiency
Low forward voltage drop
High current capability
Bottom Side Metal Heat Sink
Low reverse leakage current
High surge current capability
Application
Automotive Inverters and Solar Inverters
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Plating Power Supply,Motor Control,SMPS and UPS
Car Audio Amplifiers and Sound Device Systems
Mechanical Data
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Case: Heatsink TO-3PN open metal package
Epoxy: UL 94V-0 rate flame retardant
Terminals: Solderable per MIL-STD-202
method 208
Case
Case
Case
Case
Series
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Polarity: As marked on diode body
Mounting position: Any
Weight: 0.65 gram approximately
Doubler
Common Cathode Common Anode Tandem Polarity Tandem Polarity
Suffix "PS"
Negative
Positive
Suffix "PT"
Suffix "PA"
Suffix "PD"
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
o
Rating at 25
C ambient temperature unless otherwise specified.
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
UNIT
SYMBOL
MUR3020PS MUR3040PS MUR3060PS
V
V
V
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
VRRM
VRMS
VDC
200
140
200
400
280
400
600
420
600
Maximum DC Blocking Voltage
Maximum Average Forward Rectified
30.0
300
1.3
A
A
V
IF(AV)
o
(Total Device 2x15A=30A)
Current TC=125 C
Peak Forward Surge Current, 8.3ms single
Half sine-wave superimposed on rated load
(JEDEC method)
IFSM
Maximum Instantaneous Forward Voltage
VF
IR
0.98
1.7
@ 15.0 A(Per Diode/Per Leg)
Maximum DC Reverse Current @TJ=25oC
At Rated DC Blocking Voltage @TJ=125oC
uA
uA
nS
10
500
Maximum Reverse Recovery Time (Note 1)
Typical junction Capacitance (Note 2)
Trr
CJ
35-50
150
pF
oC
Operating Junction and Storage
Temperature Range
T
J, TSTG
-55 to +150
.
= 0.5A I = 1 0A Irr = 0.25A.
F R
NOTES : (1) Reverse recovery test conditions I
(2) Thermal Resistance junction to terminal.
(3) Measured at 1.0 MHz and applied reverse voltage of 4.0 Volts DC.
Page 1/3
http://www.thinkisemi.com.tw/
Rev.08T
© 1995 Thinki Semiconductor Co., Ltd.
MUR3020PS thru MUR3060PS
FIG.2 - MAXIMUM NON-REPETITIVE
PEAK FORWARD SURGE CURRENT
FIG.1 - FORWARD CURRENT DERATING CURVE
30
25
20
15
10
5
300
250
200
150
100
50
Pulse Width 8.3ms
Single Half-Sire-Wave
(JEDEC Method)
60 Hz Resistive or
Inductive load
0
0
0
50
100
150
1
10
100
LEAD TEMPERATURE, o
C
NUMBER OF CYCLES AT 60Hz
FIG.3 - TYPICAL INSTANTANEOUS
FORWARD CHARACTERISTICS
FIG.4 - TYPICAL REVERSE CHARACTERISTICS
100
150
TJ=125oC
10
1
MUR3040PS
MUR3020PS
15
MUR3060PS
1.0
0.1
TJ=25oC
TJ=25oC
PULSE WIDTH=300uS
1% DUTY CYCLE
0.1
0.01
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
0
20
40
60
80
100
INSTANTANEOUS FORWARD VOLTAGE,
VOLTS
PERCENT OF RATED PEAK REVERSE VOLTAGE,%
FIG.5 - TYPICAL JUNCTION CAPACITANCE
1000
TJ = 25oC
f = 1.0 MHZ
Vsig = 50mVp-p
100
10
0.1
1.0
4.0 10
100
REVERSE VOLTAGE, VOLTS
.
.
.
Page 2/3
Rev.08T
© 1995 Thinki Semiconductor Co., Ltd.
http://www.thinkisemi.com.tw/
MUR3020PS thru MUR3060PS
Package Information
TO-3PN Package Outline
Dimensions(millimeters)
Symbol
Min.
4.60
1.50
2.20
0.80
2.90
1.90
0.40
5.25
15.3
13.2
13.1
9.10
19.7
19.1
18.3
2.80
4.80
3.00
Max.
5.00
2.00
2.60
1.20
3.30
2.30
0.80
5.65
15.7
13.6
13.5
9.50
20.1
20.1
18.7
3.20
5.20
3.40
A
A1
A2
b
b1
b2
c
e
E
E1
E2
E3
H
H1
H2
H3
G
ФP
Page 3/3
http://www.thinkisemi.com.tw/
Rev.08T
© 1995 Thinki Semiconductor Co., Ltd.
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