MURB1620CTR [THINKISEMI]
16.0 Ampere Surface Mount Common Anode Ultra Fast Recovery Rectifier;
| 型号： | MURB1620CTR |
| 厂家： | 
Thinki Semiconductor Co., Ltd. |
| 描述： | 16.0 Ampere Surface Mount Common Anode Ultra Fast Recovery Rectifier |
| 文件： | 总2页 (文件大小：257K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
MURB1620CTR thru MURB1660CTR
MURB1620CTR thru MURB1660CTR
Pb Free Plating Product
16.0 Ampere Surface Mount Common Anode Ultra Fast Recovery Rectifier
Unit : inch (mm)
D2PAK/TO-263
Feature
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ꢀ
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ꢀ
ꢀ
Fast switching for high efficiency
Low forward voltage drop
High current capability
Low reverse leakage current
High surge current capability
Application
Automotive Environment(Inverters/Converters)
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Plating Power Supply,Adaptor,SMPS and UPS
Car Audio Amplifiers and Sound Device System
Mechanical Data
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Case:TO-263/D2PAK pkg case
Epoxy: UL 94V-0 rate flame retardant
Terminals: Solderable per MIL-STD-202
method 208
Polarity: As marked on diode body
Mounting position: Any
Case
Case
Case
Doubler
Tandem Polarity
Suffix "CTD"
Negative
Common Anode
Suffix "CTR"
Positive
ꢀ
ꢀ
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Common Cathode
Suffix "CT"
Weight: 2.0 gram approximately
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Rating at 25oC ambient temperature unless otherwise specified.
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
UNIT
SYMBOL
MURB1620CTR MURB1640CTR MURB1660CTR
V
V
V
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
V
RRM
RMS
200
140
200
400
280
400
600
420
600
V
Maximum DC Blocking Voltage
V
DC
Maximum Average Forward Rectified
16.0
A
A
V
IF(AV)
Current T
C
=100oC
Peak Forward Surge Current, 8.3ms single
Half sine-wave superimposed on rated load
(JEDEC method)
I
FSM
175
150
Maximum Instantaneous Forward Voltage
@ 8.0 A
V
F
0.98
1.3
1.7
Maximum DC Reverse Current @T
At Rated DC Blocking Voltage @T
J
=25oC
uA
uA
nS
10.0
250
I
R
J
=125oC
Maximum Reverse Recovery Time (Note 1)
Typical junction Capacitance (Note 2)
Typical Thermal Resistance (Note 3)
Trr
35
90
pF
C
J
R
JC
2.2
oC
/W
Operating Junction and Storage
Temperature Range
oC
-55 to + 150
T
J
, TSTG
NOTES : (1) Reverse recovery test conditions IF= 0.5A, IR= 1.0A, Irr = 0.25A.
(2) Measured at 1.0 MHz and applied reverse voltage of 4.0 Volts DC.
(3) Thermal Resistance junction to case.
Page 1/2
http://www.thinkisemi.com/
Rev.04/2014
© 2006 Thinki Semiconductor Co.,Ltd.
MURB1620CTR thru MURB1660CTR
FIG.2 - MAXIMUM NON-REPETITIVE
PEAK FORWARD SURGE CURRENT
FIG.1 - FORWARD CURRENT DERATING CURVE
16
13
10
8
200
175
150
125
100
75
Pulse Width 8.3ms
Single Half-Sire-Wave
(JEDEC Method)
6
50
4
25
60 Hz Resistive or
Inductive load
0
0
0
50
100
150
1
10
100
NUMBER OF CYCLES AT 60Hz
CASE TEMPERATURE, oC
FIG.3 - TYPICAL INSTANTANEOUS
FORWARD CHARACTERISTICS
FIG.4 - TYPICAL REVERSE CHARACTERISTICS
1000
80
MURB1620CTR
TJ=125oC
MURB1640CTR
100
8
10
TJ=25oC
0.1
MURB1660CTR
1
TJ=25oC
PULSE WIDTH=300uS
1% DUTY CYCLE
0.01
0.1
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
0
20
40
60
80
100
INSTANTANEOUS FORWARD VOLTAGE,
VOLTS
PERCENT OF RATED PEAK REVERSE VOLTAGE,%
FIG.5 - TYPICAL JUNCTION CAPACITANCE
1000
TJ = 25oC
f = 1.0 MHZ
Vsig = 50mVp-p
100
10
0.1
1.0
4.0 10
100
REVERSE VOLTAGE, VOLTS
Page 2/2
Rev.04/2014
© 2006 Thinki Semiconductor Co.,Ltd.
http://www.thinkisemi.com/
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