MURF3040PTD [THINKISEMI]
30.0 Ampere Insulated Dual Doubler Ultra Fast Recovery Rectifier Diodes;
| 型号： | MURF3040PTD |
| 厂家： | 
Thinki Semiconductor Co., Ltd. |
| 描述： | 30.0 Ampere Insulated Dual Doubler Ultra Fast Recovery Rectifier Diodes |
| 文件： | 总2页 (文件大小：691K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
MURF3020PTD thru MURF3060PTD
MURF3020PTD thru MURF3060PTD
Pb Free Plating Product
30.0 Ampere Insulated Dual Doubler Ultra Fast Recovery Rectifier Diodes
Unit: inch (mm)
TO-3P(H)IS
Features
.217 (5.5)
.130 (3.3)
.610 (15.5)
ꢀDual rectifier construction, positive center-tap
ꢀPlastic package has Underwriters Laboratory
Flammability Classification 94V0
.177
(4.5)
.378
(9.6)
ꢀGlass passivated chip junctions
ꢀSuperfast recovery time, high voltage
ꢀLow forward voltage, high current capability
ꢀLow thermal resistance
.965
(24.5)
ꢀLow power loss, high efficiency
.177
(4.5)
ꢀHigh temperature soldering guaranteed:
o
260 C, 0.16”(4.06mm)from case for 10 seconds
.720
(18.3)
Min
Mechanical Data
Cases: Insulated/Isolated TO-3P(H)IS
ꢀ
.215 (5.47)
.138 (3.5)
ꢀTerminals: Pure tin plated, lead free solderable per
MIL-STD-750. Method 2026
ꢀPolarity: As marked
ꢀMounting position: Any
Positive
Common Cathode
Suffix "PT"
ꢀMounting torque: 10in-lbs. Max.
ꢀWeight: 0.2 ounce, 5.6 gram approximately
Negative
Common Anode
Suffix "PTA"
Doubler
Tandem Polarity
Suffix "PTD"
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
o
Rating at 25
C ambient temperature unless otherwise specified.
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
MURF3020PT MURF3040PT MURF3060PT
MURF3020PTA MURF3040PTA MURF3060PTA
MURF3020PTD MURF3040PTD MURF3060PTD
UNIT
SYMBOL
V
V
V
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
VRRM
VRMS
VDC
200
140
200
400
280
400
600
420
600
Maximum DC Blocking Voltage
Maximum Average Forward Rectified
Current TC=125oC
30.0
300
1.3
A
A
V
IF(AV)
Peak Forward Surge Current, 8.3ms single
Half sine-wave superimposed on rated load
(JEDEC method)
IFSM
Maximum Instantaneous Forward Voltage
@ 15.0 A
VF
IR
0.98
1.7
Maximum DC Reverse Current @TJ=25oC
At Rated DC Blocking Voltage @TJ=125oC
uA
uA
nS
10
500
Maximum Reverse Recovery Time (Note 1)
Typical junction Capacitance (Note 2)
Trr
CJ
35
pF
oC
150
Operating Junction and Storage
Temperature Range
T
J, TSTG
-55 to +150
.
NOTES : (1) Reverse recovery test conditions I
(2) Thermal Resistance junction to terminal.
(3) Measured at 1.0 MHz and applied reverse voltage of 4.0 Volts DC.
F
= 0.5A I
R
= 1 0A Irr = 0.25A.
Rev.04
© 2006 Thinki Semiconductor Co.,Ltd.
Page 1/2
http://www.thinkisemi.com/
MURF3020PTD thru MURF3060PTD
FIG.2 - MAXIMUM NON-REPETITIVE
PEAK FORWARD SURGE CURRENT
FIG.1 - FORWARD CURRENT DERATING CURVE
30
25
20
15
10
5
300
250
200
150
100
50
Pulse Width 8.3ms
Single Half-Sire-Wave
(JEDEC Method)
60 Hz Resistive or
Inductive load
0
0
0
50
100
150
1
10
100
LEAD TEMPERATURE, oC
NUMBER OF CYCLES AT 60Hz
FIG.3 - TYPICAL INSTANTANEOUS
FORWARD CHARACTERISTICS
FIG.4 - TYPICAL REVERSE CHARACTERISTICS
100
150
TJ=125oC
10
1
MUR3040PTD
MUR3020PTD
15
MUR3060PTD
1.0
0.1
TJ=25oC
TJ=25oC
PULSE WIDTH=300uS
1% DUTY CYCLE
0.1
0.01
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
0
20
40
60
80
100
INSTANTANEOUS FORWARD VOLTAGE,
VOLTS
PERCENT OF RATED PEAK REVERSE VOLTAGE,%
FIG.5 - TYPICAL JUNCTION CAPACITANCE
1000
TJ = 25oC
f = 1.0 MHZ
Vsig = 50mVp-p
100
10
0.1
1.0
4.0 10
100
REVERSE VOLTAGE, VOLTS
.
.
.
Rev.04
© 2006 Thinki Semiconductor Co.,Ltd.
Page 2/2
http://www.thinkisemi.com/
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