SDURF1520CTR [THINKISEMI]
15Ampere Insulated Dual Common Anode Ultra Fast Recovery Rectifiers;
| 型号： | SDURF1520CTR |
| 厂家： | 
Thinki Semiconductor Co., Ltd. |
| 描述： | 15Ampere Insulated Dual Common Anode Ultra Fast Recovery Rectifiers 超快恢复二极管 快速恢复二极管 局域网 |
| 文件： | 总2页 (文件大小：374K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SDURF1520CTR thru SDURF1560CTR
SDURF1520CTR/SDURF1530CTR/SDURF1540CTR/SDURF1560CTR
Pb Free Plating Product
15Ampere Insulated Dual Common Anode Ultra Fast Recovery Rectifiers
ITO-220AB/TO-22F-3L
Unit : inch (mm)
Features
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
Fast switching for high efficiency
Low forward voltage drop
High current capability
.189(4.8)
.406(10.3)
.165(4.2)
.381(9.7)
.134(3.4)
.130(3.3)
.118(3.0)
.114(2.9)
Low reverse leakage current
High surge current capability
Application
Automotive Inverters and Solar Inverters
ꢀ
ꢀ
ꢀ
Plating Power Supply,SMPS and UPS
Car Audio Amplifiers and Sound Device Systems
.114(2.9)
.098(2.5)
.071(1.8)
.055(1.4)
.055(1.4)
.039(1.0)
.035(0.9)
.011(0.3)
.032(.8)
MAX
Mechanical Data
.1
(2.55)
.1
ꢀ
ꢀ
ꢀ
Case: ITO-220AB full plastic isolated package
Epoxy: UL 94V-0 rate flame retardant
Terminals: Solderable per MIL-STD-202
method 208
(2.55)
Case
Case
Doubler
Tandem Polarity
Suffix "CTD"
Case
Case
ꢀ
ꢀ
ꢀ
Polarity: As marked on diode body
Mounting position: Any
Weight: 2.0 gram approximately
Series
Common Cathode Common Anode Tandem Polarity
Negative
Positive
Suffix "CT"
Suffix "CTR"
Suffix "CTS"
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Rating at 25o
ambient temperature unless otherwise specified.
C
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
SDURF1530CTR
UNIT
SYMBOL SDURF1520CTR
SDURF1560CTR
SDURF1540CTR
V
V
V
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
V
RRM
RMS
200
140
200
400
280
400
600
420
600
V
Maximum DC Blocking Voltage
V
DC
Maximum Average Forward Rectified
15.0
A
A
V
IF(AV)
o
(Total Device 2x7.5A=15A)
Current T
C
=100 C
Peak Forward Surge Current, 8.3ms single
Half sine-wave superimposed on rated load
(JEDEC method)
I
FSM
175
150
Maximum Instantaneous Forward Voltage
V
F
0.98
1.3
1.7
(Per Diode/Per Leg)
@ 8.0 A
Maximum DC Reverse Current @T
At Rated DC Blocking Voltage @T
=25oC
5.0
100
μA
μA
J
I
R
J
=125oC
nS
pF
Maximum Reverse Recovery Time (Note 1)
Typical junction Capacitance (Note 2)
Typical Thermal Resistance (Note 3)
Trr
35
90
C
J
R
JC
3.0
℃
/W
Operating Junction and Storage
Temperature Range
-55 to + 150
℃
T , TSTG
J
NOTES : (1) Reverse recovery test conditions IF= 0.5A, IR= 1.0A, Irr = 0.25A.
(2) Measured at 1.0 MHz and applied reverse voltage of 4.0 Volts DC.
(3) Thermal Resistance junction to case.
Page 1/2
http://www.thinkisemi.com.tw/
Rev.09T
© 1995 Thinki Semiconductor Co., Ltd.
SDURF1520CTR thru SDURF1560CTR
FIG.2 - MAXIMUM NON-REPETITIVE
PEAK FORWARD SURGE CURRENT
FIG.1 - FORWARD CURRENT DERATING CURVE
15
13
10
8
200
175
150
125
100
75
Pulse Width 8.3ms
Single Half-Sire-Wave
(JEDEC Method)
6
50
4
25
60 Hz Resistive or
Inductive load
0
0
0
50
100
150
1
10
100
NUMBER OF CYCLES AT 60Hz
CASE TEMPERATURE, oC
FIG.3 - TYPICAL INSTANTANEOUS
FORWARD CHARACTERISTICS
FIG.4 - TYPICAL REVERSE CHARACTERISTICS
1000
80
SDURF1520CTR
TJ=125oC
SDURF1530CTR/SDURF1540CTR
100
8
10
TJ=25oC
SDURF1560CTR
0.1
1
TJ=25oC
PULSE WIDTH=300uS
1% DUTY CYCLE
0.01
0.1
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
0
20
40
60
80
100
INSTANTANEOUS FORWARD VOLTAGE,
VOLTS
PERCENT OF RATED PEAK REVERSE VOLTAGE,%
FIG.5 - TYPICAL JUNCTION CAPACITANCE
1000
TJ = 25oC
f = 1.0 MHZ
Vsig = 50mVp-p
100
10
0.1
1.0
4.0 10
100
REVERSE VOLTAGE, VOLTS
Page 2/2
Rev.09T
© 1995 Thinki Semiconductor Co., Ltd.
http://www.thinkisemi.com.tw/
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