SDURF30120CT [THINKISEMI]

30.0 Ampere Insulated Dual Common Cathode Ultra Fast Recovery Rectifiers;
SDURF30120CT
型号: SDURF30120CT
厂家: Thinki Semiconductor Co., Ltd.    Thinki Semiconductor Co., Ltd.
描述:

30.0 Ampere Insulated Dual Common Cathode Ultra Fast Recovery Rectifiers

超快恢复二极管 快速恢复二极管 局域网
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中文:  中文翻译
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SDURF3020CT thru SDURF30120CT  
SDURF3020CT thru SDURF30120CT  
Pb Free Plating Product  
30.0 Ampere Insulated Dual Common Cathode Ultra Fast Recovery Rectifiers  
ITO-220AB/TO-220F-3L  
Unit:inch(mm)  
Features  
ThinkiSemi latest&matured process FRD/FRED  
Low forward voltage drop  
High current capability  
.189(4.8)  
.165(4.2)  
.406(10.3)  
.381(9.7)  
.134(3.4)  
.118(3.0)  
.130(3.3)  
.114(2.9)  
Low reverse leakage current  
High surge current capability  
Application  
Automotive Inverters and Solar Inverters  
Car Audio Amplifiers and Sound Device Systems  
Plating Power Supply,Motor Control,UPS and SMPS etc.  
.114(2.9)  
.098(2.5)  
.071(1.8)  
.055(1.4)  
.055(1.4)  
.039(1.0)  
.035(0.9)  
.011(0.3)  
.032(.8)  
MAX  
Mechanical Data  
.1  
(2.55)  
.1  
Case:Isolated fully plastic ITO-220AB/TO-220F-3L package  
Epoxy: UL 94V-0 rate flame retardant  
Terminals: Solderable per MIL-STD-202 method 208  
Polarity: As marked on diode body  
Mounting position: Any  
(2.55)  
Weight: 2.0 gram approximately  
Series  
Doubler  
Negative  
Positive  
Tandem Polarity  
Suffix "CTS"  
Tandem Polarity  
Suffix "CTD"  
Common Cathode  
Suffix "CT"  
Common Anode  
Suffix "CTR"  
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS  
Rating at 25ambient temperature unless otherwise specified.  
Single phase,half wave,60Hz,resistive or inductive load.  
For capacitive load, derate current by 20%.  
SDURF3030CT  
SDURF3040CT  
PARAMETER  
SYMBOL  
UNIT  
SDURF3020CT  
SDURF3060CT  
SDURF3080CT  
SDURF30100CT  
SDURF30120CT  
Maximum Recurrent Peak Reverse Voltage  
Maximum RMS Voltage  
VRRM  
VRMS  
VDC  
200  
140  
200  
400  
280  
400  
600  
420  
600  
800  
560  
800  
1000  
700  
1200  
840  
V
V
V
Maximum DC Blocking Voltage  
1000  
1200  
Maximum Average Forward Rectified  
Current TC=125℃  
30.0  
300  
IF(AV)  
IFSM  
A
A
V
(Total Device 2x15A=30.0A)  
Peak Forward Surge Current, 8.3ms single Half  
sine-wave superimposed on rated load (JEDEC  
method)(Per Diode/Per Leg)  
Maximum Instantaneous Forward Voltage  
@15A(Per Diode/Per Leg)  
VF  
(Typical)  
1.50-1.70  
0.85-0.95  
1.00-1.25  
1.25-1.50  
Maximum DC Reverse Current @TJ=25℃  
At Rated DC Blocking Voltage @TJ=125℃  
1.0  
100  
μA  
μA  
IR  
Maximum Reverse Recovery Time (Note1)  
Typical Junction Capacitance (Note 2)  
Typical Thermal Resistance (Note 3)  
25-50  
50-75  
Trr  
CJ  
nS  
pF  
150  
3.0  
RθJC  
/W  
Operating Junction and Storage  
Temperature Range  
-55 to +175  
TJ,TSTG  
Note:(1)Reverse recovery test conditions IF = 0.5A, IR = 1.0A, Irr = 0.25A.  
Note:(2)Measured at 1.0 MHz and applied reverse voltage of 4.0 Volts DC.  
Note:(3)Thermal Resistance junction to case.  
Page 1/2  
Rev.10T  
© 1995 Thinki Semiconductor Co., Ltd.  
http://www.thinkisemi.com.tw/  
SDURF3020CT thru SDURF30120CT  
FIG.2 - MAXIMUM NON-REPETITIVE  
PEAK FORWARD SURGE CURRENT  
FIG.1 - FORWARD CURRENT DERATING CURVE  
30  
300  
240  
180  
120  
60  
Pulse Width 8.3ms  
Single Half-Sire-Wave  
(JEDEC Method)  
24  
18  
12  
8
60 Hz Resistive or  
Inductive load  
0
0
125  
187.5  
62.5  
1
10  
100  
NUMBER OF CYCLES AT 60Hz  
CASE TEMPERATURE,  
FIG.3 - TYPICAL INSTANTANEOUS  
FORWARD CHARACTERISTICS  
FIG.4 - TYPICAL REVERSE CHARACTERISTICS  
1000  
150  
SDURF3020CT  
TJ=125  
100  
SDURF3030CT/SDURF3040CT  
SDURF3060CT  
15  
10  
TJ=25  
1
SDURF3080CT/SDURF30100CT/SDURF30120CT  
1
TJ=25  
PULSE WIDTH=300uS  
1% DUTY CYCLE  
0.1  
0.1  
0.2  
0.4  
0.6  
0.8  
1.0  
1.2  
1.4  
1.6  
0
20  
40  
60  
80  
100  
INSTANTANEOUS FORWARD VOLTAGE,  
VOLTS  
PERCENT OF RATED PEAK REVERSE VOLTAGE,%  
FIG.5 - TYPICAL JUNCTION CAPACITANCE  
1000  
TJ = 25  
f = 1.0 MHZ  
Vsig = 50mVp-p  
100  
10  
0.1  
1.0  
4.0 10  
100  
REVERSE VOLTAGE, VOLTS  
Page 2/2  
Rev.10T  
© 1995 Thinki Semiconductor Co., Ltd.  
http://www.thinkisemi.com.tw/  

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