SF1004G [THINKISEMI]
10.0 Ampere Dual Common Anode Super Fast Recovery Rectifiers;
| 型号： | SF1004G |
| 厂家： | 
Thinki Semiconductor Co., Ltd. |
| 描述： | 10.0 Ampere Dual Common Anode Super Fast Recovery Rectifiers 超快恢复二极管 快速恢复二极管 局域网 |
| 文件： | 总2页 (文件大小：613K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
8S2TH02I thru 8S2TH06I
8S2TH02I thru 8S2TH06I
Pb Free Plating Product
8.0 Ampere Ceramic Insulated Tandem Ultra Fast Recovery Rectifier
Unit: mm
TO-220AC
Features
¬ Fast switching for high efficiency
¬ Low forward voltage drop
¬ High current capability
¬ Low reverse leakage current
¬ High surge current capability
Mechanical Data
¬ Case: TO-220AC(Ceramic Insulated)
¬ Epoxy: UL 94V-0 rate flame retardant
¬ Terminals: Solderable per MIL-STD-202
method 208
¬ Polarity:As marked on diode body
¬ Mounting position: Any
¬ Weight: 2.1 gram approximately
Case
Reverse Doubler
Tandem Polarity
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
o
Rating at 25
C ambient temperature unless otherwise specified.
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
UNIT
SYMBOL
8S2TH02I
8S2TH04I 8S2TH06I
V
V
V
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
VRRM
VRMS
VDC
200
140
200
400
280
400
600
420
600
Maximum DC Blocking Voltage
Maximum Average Forward Rectified
Current TC=100oC
8.0
100
1.3
A
A
V
IF(AV)
Peak Forward Surge Current, 8.3ms single
Half sine-wave superimposed on rated load
(JEDEC method)
IFSM
Maximum Instantaneous Forward Voltage
@ 5.0 A
1.7
VF
IR
0.98
Maximum DC Reverse Current @TJ=25oC
At Rated DC Blocking Voltage @TJ=125oC
uA
uA
nS
10.0
250
Maximum Reverse Recovery Time (Note 1)
Typical junction Capacitance (Note 2)
Typical Thermal Resistance (Note 3)
Trr
CJ
35
65
pF
o
R JC
2.2
CW
Operating Junction and Storage
Temperature Range
o
C
-55 to +150
TJ, TSTG
NOTES : (1) Reverse recovery test conditions IF = 0.5A, IR = 1.0A, Irr = 0.25A.
(2) Measured at 1.0 MHz and applied reverse voltage of 4.0 Volts DC.
(3) Thermal Resistance junction to case.
Page 1/2
http://www.thinkisemi.com/
Rev.04
© 2006 Thinki Semiconductor Co.,Ltd.
8S2TH02I thru 8S2TH06I
FIG.2 - MAXIMUM NON-REPETITIVE
PEAK FORWARD SURGE CURRENT
FIG.1 - FORWARD CURRENT DERATING CURVE
10
8
100
80
60
40
20
0
Pulse Width 8.3ms
Single Half-Sire-Wave
(JEDEC Method)
6
4
2
60 Hz Resistive or
Inductive load
0
0
50
100
150
1
10
100
CASE TEMPERATURE, oC
NUMBER OF CYCLES AT 60Hz
FIG.3 - TYPICAL INSTANTANEOUS
FORWARD CHARACTERISTICS
FIG.4 - TYPICAL REVERSE CHARACTERISTICS
50
1000
8S2TH02I
TJ=125oC
100
8S2TH04I
8S2TH06I
5
10
TJ=25oC
1
1
TJ=25oC
PULSE WIDTH=300uS
1% DUTY CYCLE
0.1
0.1
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
0
20
40
60
80
100
INSTANTANEOUS FORWARD VOLTAGE,
VOLTS
PERCENT OF RATED PEAK REVERSE VOLTAGE,%
FIG.5 - TYPICAL JUNCTION CAPACITANCE
1000
TJ = 25oC
f = 1.0 MHZ
Vsig = 50mVp-p
100
10
0.1
1.0
4.0 10
100
REVERSE VOLTAGE, VOLTS
Page 2/2
Rev.04
© 2006 Thinki Semiconductor Co.,Ltd.
http://www.thinkisemi.com/
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