SF1008G [THINKISEMI]

10.0 Ampere Dual Common Anode Super Fast Recovery Rectifiers;
SF1008G
型号: SF1008G
厂家: Thinki Semiconductor Co., Ltd.    Thinki Semiconductor Co., Ltd.
描述:

10.0 Ampere Dual Common Anode Super Fast Recovery Rectifiers

超快恢复二极管 快速恢复二极管 局域网
文件: 总2页 (文件大小:613K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
8S2TH02I thru 8S2TH06I  
®
8S2TH02I thru 8S2TH06I  
Pb Free Plating Product  
8.0 Ampere Ceramic Insulated Tandem Ultra Fast Recovery Rectifier  
Unit: mm  
TO-220AC  
Features  
¬ Fast switching for high efficiency  
¬ Low forward voltage drop  
¬ High current capability  
¬ Low reverse leakage current  
¬ High surge current capability  
Mechanical Data  
¬ Case: TO-220AC(Ceramic Insulated)  
¬ Epoxy: UL 94V-0 rate flame retardant  
¬ Terminals: Solderable per MIL-STD-202  
method 208  
¬ Polarity:As marked on diode body  
¬ Mounting position: Any  
¬ Weight: 2.1 gram approximately  
Case  
Reverse Doubler  
Tandem Polarity  
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS  
o
Rating at 25  
C ambient temperature unless otherwise specified.  
Single phase, half wave, 60Hz, resistive or inductive load.  
For capacitive load, derate current by 20%.  
UNIT  
SYMBOL  
8S2TH02I  
8S2TH04I 8S2TH06I  
V
V
V
Maximum Recurrent Peak Reverse Voltage  
Maximum RMS Voltage  
VRRM  
VRMS  
VDC  
200  
140  
200  
400  
280  
400  
600  
420  
600  
Maximum DC Blocking Voltage  
Maximum Average Forward Rectified  
Current TC=100oC  
8.0  
100  
1.3  
A
A
V
IF(AV)  
Peak Forward Surge Current, 8.3ms single  
Half sine-wave superimposed on rated load  
(JEDEC method)  
IFSM  
Maximum Instantaneous Forward Voltage  
@ 5.0 A  
1.7  
VF  
IR  
0.98  
Maximum DC Reverse Current @TJ=25oC  
At Rated DC Blocking Voltage @TJ=125oC  
uA  
uA  
nS  
10.0  
250  
Maximum Reverse Recovery Time (Note 1)  
Typical junction Capacitance (Note 2)  
Typical Thermal Resistance (Note 3)  
Trr  
CJ  
35  
65  
pF  
o
R JC  
2.2  
CW  
Operating Junction and Storage  
Temperature Range  
o
C
-55 to +150  
TJ, TSTG  
NOTES : (1) Reverse recovery test conditions IF = 0.5A, IR = 1.0A, Irr = 0.25A.  
(2) Measured at 1.0 MHz and applied reverse voltage of 4.0 Volts DC.  
(3) Thermal Resistance junction to case.  
Page 1/2  
http://www.thinkisemi.com/  
Rev.04  
© 2006 Thinki Semiconductor Co.,Ltd.  
8S2TH02I thru 8S2TH06I  
®
FIG.2 - MAXIMUM NON-REPETITIVE  
PEAK FORWARD SURGE CURRENT  
FIG.1 - FORWARD CURRENT DERATING CURVE  
10  
8
100  
80  
60  
40  
20  
0
Pulse Width 8.3ms  
Single Half-Sire-Wave  
(JEDEC Method)  
6
4
2
60 Hz Resistive or  
Inductive load  
0
0
50  
100  
150  
1
10  
100  
CASE TEMPERATURE, oC  
NUMBER OF CYCLES AT 60Hz  
FIG.3 - TYPICAL INSTANTANEOUS  
FORWARD CHARACTERISTICS  
FIG.4 - TYPICAL REVERSE CHARACTERISTICS  
50  
1000  
8S2TH02I  
TJ=125oC  
100  
8S2TH04I  
8S2TH06I  
5
10  
TJ=25oC  
1
1
TJ=25oC  
PULSE WIDTH=300uS  
1% DUTY CYCLE  
0.1  
0.1  
0.2  
0.4  
0.6  
0.8  
1.0  
1.2  
1.4  
1.6  
0
20  
40  
60  
80  
100  
INSTANTANEOUS FORWARD VOLTAGE,  
VOLTS  
PERCENT OF RATED PEAK REVERSE VOLTAGE,%  
FIG.5 - TYPICAL JUNCTION CAPACITANCE  
1000  
TJ = 25oC  
f = 1.0 MHZ  
Vsig = 50mVp-p  
100  
10  
0.1  
1.0  
4.0 10  
100  
REVERSE VOLTAGE, VOLTS  
Page 2/2  
Rev.04  
© 2006 Thinki Semiconductor Co.,Ltd.  
http://www.thinkisemi.com/  

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