SF167CT [THINKISEMI]

16.0 Ampere Heatsink Dual Common Cathode Super Fast Recovery Rectifiers;
SF167CT
型号: SF167CT
厂家: Thinki Semiconductor Co., Ltd.    Thinki Semiconductor Co., Ltd.
描述:

16.0 Ampere Heatsink Dual Common Cathode Super Fast Recovery Rectifiers

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中文:  中文翻译
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SF161CA thru SF168CA  
SF161CA thru SF168CA  
Pb Free Plating Product  
16.0 Ampere Heatsink Dual Common Anode Super Fast Recovery Rectifiers  
TO-220AB/TO-220-3L  
Unit : inch (mm)  
Features  
.419(10.66)  
.387(9.85)  
.196(5.00)  
.163(4.16)  
Fast switching for high efficiency  
Low forward voltage drop  
High current capability  
.139(3.55)  
MIN  
.054(1.39)  
.045(1.15)  
Low reverse leakage current  
High surge current capability  
Application  
Automotive Inverters and Solar Inverters  
Plating Power Supply,SMPS and UPS  
Car Audio Amplifiers and Sound Device Systems  
.038(0.96)  
.019(0.50)  
.025(0.65)MAX  
Mechanical Data  
Case: Heatsink TO-220AB open metal package  
Epoxy: UL 94V-0 rate flame retardant  
Terminals: Solderable per MIL-STD-202  
method 208  
Polarity: As marked on diode body  
Mounting position: Any  
.1(2.54)  
.1(2.54)  
Case  
Case  
Case  
Case  
Doubler  
Common Cathode Common Anode Tandem Polarity Tandem Polarity  
Suffix "CD" Suffix "CS"  
Series  
Negative  
Positive  
Weight: 2.2 gram approximately  
Suffix "CT"  
Suffix "CA"  
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS  
Rating at 25ambient temperature unless otherwise specified.  
Single phase, half wave, 60Hz, resistive or inductive load.  
For capacitive load, derate current by 20%.  
SF161CA  
SF165CA  
SF167CA  
UNIT  
SYMBOL  
SF164CA  
SF166CA  
SF168CA  
V
V
V
Maximum Recurrent Peak Reverse Voltage  
Maximum RMS Voltage  
V
RRM  
RMS  
200  
400  
600  
V
140  
200  
280  
400  
420  
600  
Maximum DC Blocking Voltage  
V
DC  
Maximum Average Forward Rectified  
16.0  
175  
1.3  
A
A
V
IF(AV)  
(Total Device 2x8A=16A)  
Current TC  
=125  
Peak Forward Surge Current, 8.3ms single  
Half sine-wave superimposed on rated load  
(JEDEC method)  
I
FSM  
Maximum Instantaneous Forward Voltage  
V
F
0.98  
1.7  
@ 8.0 A (Per Diode/Per Leg)  
5.0  
50  
μA  
μA  
J
=25  
Maximum DC Reverse Current @T  
At Rated DC Blocking Voltage @T  
I
R
J
=125  
nS  
pF  
Maximum Reverse Recovery Time (Note 1)  
Typical junction Capacitance (Note 2)  
Typical Thermal Resistance (Note 3)  
Trr  
35  
90  
C
J
R
JC  
1.5  
/W  
Operating Junction and Storage  
Temperature Range  
-55 to + 150  
T , TSTG  
J
NOTES : (1) Reverse recovery test conditions IF= 0.5A, IR= 1.0A, Irr = 0.25A.  
(2) Measured at 1.0 MHz and applied reverse voltage of 4.0 Volts DC.  
(3) Thermal Resistance junction to case.  
Page 1/2  
http://www.thinkisemi.com.tw/  
Rev.10T  
© 1995 Thinki Semiconductor Co., Ltd.  
SF161CA thru SF168CA  
FIG.2 - MAXIMUM NON-REPETITIVE  
PEAK FORWARD SURGE CURRENT  
FIG.1 - FORWARD CURRENT DERATING CURVE  
16  
13  
10  
8
200  
175  
150  
125  
100  
75  
Pulse Width 8.3ms  
Single Half-Sire-Wave  
(JEDEC Method)  
6
50  
4
25  
60 Hz Resistive or  
Inductive load  
0
0
0
50  
100  
150  
1
10  
100  
NUMBER OF CYCLES AT 60Hz  
CASE TEMPERATURE,  
FIG.3 - TYPICAL INSTANTANEOUS  
FORWARD CHARACTERISTICS  
FIG.4 - TYPICAL REVERSE CHARACTERISTICS  
1000  
80  
SF161CA/SF164CA  
SF165CA/SF166CA  
TJ=125  
100  
10  
1
8
TJ=25  
SF167CA/SF168CA  
0.1  
TJ=25  
PULSE WIDTH=300uS  
1% DUTY CYCLE  
0.01  
0.1  
0.2  
0.4  
0.6  
0.8  
1.0  
1.2  
1.4  
1.6  
0
20  
40  
60  
80  
100  
INSTANTANEOUS FORWARD VOLTAGE,  
VOLTS  
PERCENT OF RATED PEAK REVERSE VOLTAGE,%  
FIG.5 - TYPICAL JUNCTION CAPACITANCE  
1000  
f = 1.0 MHZ  
TJ = 25  
Vsig = 50mVp-p  
100  
10  
0.1  
1.0  
4.0 10  
100  
REVERSE VOLTAGE, VOLTS  
Page 2/2  
Rev.10T  
© 1995 Thinki Semiconductor Co., Ltd.  
http://www.thinkisemi.com.tw/  

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