SF2001G [THINKISEMI]
20.0 Ampere Dual Unipolar-Doubler Polarity Superfast Recovery Diode;
| 型号： | SF2001G |
| 厂家： | 
Thinki Semiconductor Co., Ltd. |
| 描述： | 20.0 Ampere Dual Unipolar-Doubler Polarity Superfast Recovery Diode 局域网 功效 瞄准线 二极管 |
| 文件： | 总2页 (文件大小：650K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SF2001G thru SF2008G
SF2001G thru SF2008G
Pb Free Plating Product
20.0 Ampere Dual Unipolar-Doubler Polarity Superfast Recovery Diode
Unit : inch (mm)
TO-220AB
Features
.419(10.66)
.387(9.85)
.196(5.00)
.163(4.16)
.139(3.55)
MIN
¬ Fast switching for high efficiency
¬ Low forward voltage drop
¬ High current capability
¬ Low reverse leakage current
¬ High surge current capability
.054(1.39)
.045(1.15)
Mechanical Data
.038(0.96)
.019(0.50)
.025(0.65)MAX
¬ Case: TO-220AB Heatsink
¬ Epoxy: UL 94V-0 rate flame retardant
¬ Terminals: Solderable per MIL-STD-202
method 208
.1(2.54)
.1(2.54)
¬ Polarity: As marked on body
¬ Mounting position: Any
¬ Weight: 2.24 gram approximately
Case
Case
Case
Doubler
Negative
Common Anode
Suffix "A"
Positive
Common Cathode
Series Connection
Suffix "D"
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
o
Rating at 25
C ambient temperature unless otherwise specified.
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
SF2001G
SF2002G SF2004G
SF2005G SF2006G SF2008G
Common Cathode
UNIT
SYMBOL
SF2001GA SF2002GA SF2004GA SF2005GA SF2006GA SF2008GA
SF2001GD SF2002GD SF2004GD SF2005GD SF2006GD SF2008GD
Common Anode Suffix"A"
Anode and Cathode Coexistence Suffix "D"
V
V
V
Maximum Recurrent Peak Reverse Voltage
VRRM
VRMS
VDC
50
35
50
100
70
200
140
200
300
210
300
400
280
400
600
420
600
Maximum RMS Voltage
Maximum DC Blocking Voltage
100
Maximum Average Forward Rectified
Current TC=125oC
20.0
A
A
V
IF(AV)
Peak Forward Surge Current, 8.3ms single
Half sine-wave superimposed on rated load
(JEDEC method)
IFSM
200
175
Maximum Instantaneous Forward Voltage
@ 10.0 A
VF
IR
0.975
1.3
1.5
Maximum DC Reverse Current @TJ=25oC
At Rated DC Blocking Voltage @TJ=125oC
uA
uA
nS
10.0
250
Maximum Reverse Recovery Time (Note 1)
Typical junction Capacitance (Note 2)
Trr
CJ
35
pF
oC
120
70
Operating Junction and Storage
Temperature Range
-55 to +150
T
J
, TSTG
NOTES : (1) Reverse recovery test conditions I
F
= 0.5A, I
R
= 1.0A, Irr = 0.25A.
(2) Measured at 1.0 MHz and applied reverse voltage of 4.0 Volts DC.
Page 1/2
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© 2006 Thinki Semiconductor Co.,Ltd.
SF2001G thru SF2008G
FIG.2 - MAXIMUM NON-REPETITIVE
PEAK FORWARD SURGE CURRENT
FIG.1 - FORWARD CURRENT DERATING CURVE
20
16
10
8
200
175
150
125
100
75
Pulse Width 8.3ms
Single Half-Sire-Wave
(JEDEC Method)
SF2001G-SF2004G
SF2005G-SF2008G
6
50
4
25
60 Hz Resistive or
Inductive load
0
0
0
50
100
150
1
10
100
CASE TEMPERATURE, oC
NUMBER OF CYCLES AT 60Hz
FIG.3 - TYPICAL INSTANTANEOUS
FORWARD CHARACTERISTICS
FIG.4 - TYPICAL REVERSE CHARACTERISTICS
1000
15
SF2001G-SF2004G
SF2005G-SF2007G
TJ=125oC
100
10
10
SF2008G
TJ=25oC
0.1
1
TJ=25oC
PULSE WIDTH=300uS
1% DUTY CYCLE
0.01
0.1
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
0
20
40
60
80
100
INSTANTANEOUS FORWARD VOLTAGE,
VOLTS
PERCENT OF RATED PEAK REVERSE VOLTAGE,%
FIG.5 - TYPICAL JUNCTION CAPACITANCE
1000
TJ = 25oC
f = 1.0 MHZ
Vsig = 50mVp-p
100
10
0.1
1.0
4.0 10
100
REVERSE VOLTAGE, VOLTS
Page 2/2
http://www.thinkisemi.com/
© 2006 Thinki Semiconductor Co.,Ltd.
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