SF3004PT [THINKISEMI]
30.0 Ampere Dual Common Cathode Super Fast Recovery Rectifiers;
| 型号： | SF3004PT |
| 厂家： | 
Thinki Semiconductor Co., Ltd. |
| 描述： | 30.0 Ampere Dual Common Cathode Super Fast Recovery Rectifiers |
| 文件： | 总2页 (文件大小：701K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SF3004PT thru SF3008PT
SF3004PT thru SF3008PT
Pb Free Plating Product
30.0 Ampere Dual Common Cathode Super Fast Recovery Rectifiers
Unit: inch (mm)
TO-3P/TO-247AD
Features
.640(16.25)
.620(15.75)
.199(5.05)
.175(4.45)
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Dual rectifier construction, positive center-tap
Plastic package has Underwriters Laboratory
Flammability Classification 94V0
.142(3.6)
.125(3.2)
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
Glass passivated chip junctions
Superfast recovery time, high voltage
Low forward voltage, high current capability
Low thermal resistance
Low power loss, high efficiency
.095(2.4)
High temperature soldering guaranteed:
o
.126(3.2)
260 C, 0.16”(4.06mm)from case for 10 seconds
.110(2.8)
.050(1.25)
.045(1.15)
Mechanical Data
.030(0.75)
.017(0.45)
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ꢀ
Cases: TO-3P/TO-247AD molded plastic
Terminals: Pure tin plated, lead free solderable per
MIL-STD-750. Method 2026
.225(5.7)
.204(5.2)
.225(5.7)
.204(5.2)
ꢀ
ꢀ
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Polarity: As marked
Mounting position: Any
Positive
Common Cathode
Suffix "PT"
Negative
Doubler
Mounting torque: 10in-lbs. Max.
Weight: 0.2 ounce, 5.6 gram approximately
Common Anode Series Connection
Suffix "PTA" Suffix "PTD"
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
o
Rating at 25
C ambient temperature unless otherwise specified.
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
SF3004PT
SF3006PT
SF3008PT
UNIT
SYMBOL
SF3004PTA
SF3006PTA
SF3006PTD
SF3008PTA
SF3008PTD
SF3004PTD
V
V
V
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
VRRM
VRMS
VDC
200
140
200
400
280
400
600
420
600
Maximum DC Blocking Voltage
Maximum Average Forward Rectified
Current TC=125oC
30.0
300
1.3
A
A
V
IF(AV)
Peak Forward Surge Current, 8.3ms single
Half sine-wave superimposed on rated load
(JEDEC method)
IFSM
Maximum Instantaneous Forward Voltage
@ 15.0 A
VF
IR
0.98
1.7
Maximum DC Reverse Current @TJ=25oC
At Rated DC Blocking Voltage @TJ=125oC
uA
uA
nS
10
500
Maximum Reverse Recovery Time (Note 1)
Typical junction Capacitance (Note 2)
Trr
CJ
35
pF
oC
150
Operating Junction and Storage
Temperature Range
T
J, TSTG
-55 to +150
.
NOTES : (1) Reverse recovery test conditions I
(2) Thermal Resistance junction to terminal.
(3) Measured at 1.0 MHz and applied reverse voltage of 4.0 Volts DC.
F
= 0.5A I
R
= 1 0A Irr = 0.25A.
Rev.05
© 2006 Thinki Semiconductor Co.,Ltd.
Page 1/2
http://www.thinkisemi.com/
SF3004PT thru SF3008PT
FIG.2 - MAXIMUM NON-REPETITIVE
PEAK FORWARD SURGE CURRENT
FIG.1 - FORWARD CURRENT DERATING CURVE
30
25
20
15
10
5
300
250
200
150
100
50
Pulse Width 8.3ms
Single Half-Sire-Wave
(JEDEC Method)
60 Hz Resistive or
Inductive load
0
0
0
50
100
150
1
10
100
LEAD TEMPERATURE, oC
NUMBER OF CYCLES AT 60Hz
FIG.3 - TYPICAL INSTANTANEOUS
FORWARD CHARACTERISTICS
FIG.4 - TYPICAL REVERSE CHARACTERISTICS
100
150
TJ=125oC
10
1
SF3006PT
SF3004PT
15
SF3008PT
1.0
0.1
TJ=25oC
TJ=25oC
PULSE WIDTH=300uS
1% DUTY CYCLE
0.1
0.01
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
0
20
40
60
80
100
INSTANTANEOUS FORWARD VOLTAGE,
VOLTS
PERCENT OF RATED PEAK REVERSE VOLTAGE,%
FIG.5 - TYPICAL JUNCTION CAPACITANCE
1000
TJ = 25oC
f = 1.0 MHZ
Vsig = 50mVp-p
100
10
0.1
1.0
4.0 10
100
REVERSE VOLTAGE, VOLTS
.
.
.
Rev.05
© 2006 Thinki Semiconductor Co.,Ltd.
Page 2/2
http://www.thinkisemi.com/
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