SFA1601GR [THINKISEMI]
16.0 Ampere Reverse Polarity Super Fast Recovery Rectifier Diode; 16.0安培反接超快速恢复整流二极管
| 型号： | SFA1601GR |
| 厂家： | 
Thinki Semiconductor Co., Ltd. |
| 描述： | 16.0 Ampere Reverse Polarity Super Fast Recovery Rectifier Diode |
| 文件： | 总2页 (文件大小：612K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SFA1601GR thru SFA1608GR
SFA1601GR thru SFA1608GR
Pb Free Plating Product
16.0 Ampere Reverse Polarity Super Fast Recovery Rectifier Diode
Unit : inch (mm)
TO-220AC
Features
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ꢀ
ꢀ
ꢀ
ꢀ
Glass passivated chip junction
.419(10.66)
.387(9.85)
.196(5.00)
.163(4.16)
Low forward voltage drop
High current capability
Low reverse leakage current
.139(3.55)
MIN
.054(1.39)
.045(1.15)
High surge current capability
Application
Automotive Inverters/Solar Inverters
ꢀ
ꢀ
ꢀ
Plating Power Supply,SMPS and UPS
Car Audio Amplifiers and Sound Device Systems
.038(0.96)
.019(0.50)
.025(0.65)MAX
Mechanical Data
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ꢀ
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Case: Heatsink TO-220AB
Epoxy: UL 94V-0 rate flame retardant
Terminals: Solderable per MIL-STD-202
method 208
.1(2.54)
.1(2.54)
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ꢀ
ꢀ
Polarity: As marked on diode body
Mounting position: Any
Weight: 2.0 gram approxiamtely
Negative
Suffix "GR"
Positive
Suffix "G"
Maximum Ratings and Electrical Characteristics
Rating at 25 ℃ ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%
SFA
SFA
SFA
SFA
SFA
SFA
SFA
SFA
Symbol
Unit
Type Number
1601GR1602GR1603GR1604GR1605GR1606GR1607GR 1608GR
Maximum Repetitive Peak Reverse Voltage
Maximum RMS Voltage
VRRM
VRMS
VDC
50
35
50
100
70
150
105
150
200
140
200
300
210
300
400
280
400
500
350
500
600
420
600
V
V
V
Maximum DC Blocking Voltage
100
IF(AV)
IFSM
VF
Maximum Average Forward Rectified Current
16
A
A
Peak Forward Surge Current, 8.3 ms Single Half Sine-
wave Superimposed on Rated Load (JEDEC method)
200
Maximum Instantaneous Forward Voltage (Note 1)
@ 16 A
0.975
1.3
1.7
V
10
400
35
Maximum Reverse Current @ Rated VR TA=25 ℃
IR
uA
T
Maximum Reverse Recovery Time (Note 2)
Typical Junction Capacitance (Note 3)
Typical Thermal Resistance
A=100 ℃
Trr
Cj
nS
pF
130
100
RθjC
TJ
1
℃
/W
Operating Temperature Range
- 65 to + 150
- 65 to + 150
℃
Storage Temperature Range
TSTG
℃
Note 1: Pulse Test with PW=300 usec, 1% Duty Cycle
Note 2: Reverse Recovery Test Conditions: IF=0.5A, IR=1.0A, IRR=0.25A
Note 3: Measured at 1 MHz and Applied Reverse Voltage of 4.0V D.C.
Page 1/2
http://www.thinkisemi.com/
Rev.04/2014
© 2006 Thinki Semiconductor Co.,Ltd.
SFA1601GR thru SFA1608GR
RATINGS AND CHARACTERISTIC CURVES (SFA1601GR thru SFA1608GR)
FIG. 2 TYPICAL REVERSE CHARACTERISTICS
FIG.1 FORWARD CURRENT DERATING CURVE
1000
100
10
20
16
12
8
TA=100℃
4
0
0
10 20 30 40 50 60 70 80 90 100 110 120 130 140 150
TA=75℃
CASE TEMPERATURE (oC)
1
FIG. 3 MAXIMUM NON-REPETITIVE FORWARD
SURGE CURRENT
TA=25℃
250
200
150
100
50
8.3mS Single Half Sine Wave
JEDEC Method
0.1
0
20
40
60
80
100
120
140
PERCENT OF RATED PEAK REVERSE VOLTAGE (%)
0
FIG. 5 TYPICAL FORWARD CHARACTERISRICS
1
10
100
100
10
NUMBER OF CYCLES AT 60 Hz
SFA1601GR-SFA1604GR
FIG. 4 TYPICAL JUNCTION CAPACITANCE
TA=25℃
300
250
200
150
100
50
1
SFA1605GR-SFA1606GR
SFA1601GR-SFA1604GR
SFA1607GR-SFA1608GR
0.1
0.01
SFA1605GR-SFA1608GR
TA=25℃
Pulse Width=300us
1% Duty Cycle
0
1
10
100
1000
0.4
0.6
0.8
1
1.2
1.4
1.6
1.8
FORWARD VOLTAGE (V)
REVERSE VOLTAGE (V)
Page 2/2
Rev.04/2014
© 2006 Thinki Semiconductor Co.,Ltd.
http://www.thinkisemi.com/
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