SFF1604GS [THINKISEMI]

16.0 Amperes Insulated Series Connection Super Fast Recovery Rectifiers;
SFF1604GS
型号: SFF1604GS
厂家: Thinki Semiconductor Co., Ltd.    Thinki Semiconductor Co., Ltd.
描述:

16.0 Amperes Insulated Series Connection Super Fast Recovery Rectifiers

文件: 总2页 (文件大小:849K)
中文:  中文翻译
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SFF1601GS thru SFF1608GS  
SFF1601GS thru SFF1608GS  
Pb Free Plating Product  
16.0 Amperes Insulated Series Connection Super Fast Recovery Rectifiers  
Unit : inch (mm)  
ITO-220AB/TO-220F-3L  
Features  
Super fast switching for high efficiency  
.189(4.8)  
.165(4.2)  
.406(10.3)  
.381(9.7)  
.134(3.4)  
.118(3.0)  
Low forward voltage drop  
High current capability  
Low reverse leakage current  
High surge current capability  
.130(3.3)  
.114(2.9)  
Application  
Automotive Inverters and Solar Inverters  
Plating Power Supply,SMPS and UPS  
.114(2.9)  
.098(2.5)  
.071(1.8)  
.055(1.4)  
Car Audio Amplifiers and Sound Device Systems  
.055(1.4)  
.039(1.0)  
.035(0.9)  
.011(0.3)  
.032(.8)  
MAX  
Mechanical Data  
.1  
(2.55)  
.1  
Case: ITO-220AB full plastic isolated package  
Epoxy: UL 94V-0 rate flame retardant  
Terminals: Solderable per MIL-STD-202  
method 208  
(2.55)  
Case  
Case  
Case  
Case  
Polarity: As marked on diode body  
Mounting position: Any  
Weight: 1.75 gram approximately  
Doubler  
Series  
Negative  
Common Cathode Common Anode  
Suffix "G" Suffix "GA"  
Positive  
Tandem Polarity Tandem Polarity  
Suffix "GD"  
Suffix "GS"  
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (TA=25unless otherwise noted)  
SFF  
SFF  
SFF  
SFF  
SFF  
SFF  
SFF  
SFF  
PARAMETER  
SYMBOL  
UNIT  
1601GS 1602GS 1603GS 1604GS 1605GS 1606GS 1607GS 1608GS  
Maximum repetitive peak reverse voltage  
Maximum RMS voltage  
VRRM  
VRMS  
VDC  
50  
35  
50  
100  
70  
150  
105  
150  
200  
140  
200  
300  
210  
300  
400  
280  
400  
500  
350  
500  
600  
420  
600  
V
V
V
A
Maximum DC blocking voltage  
100  
Maximum average forward rectified current  
IF(AV)  
16  
Peak forward surge current, 8.3 ms single half  
sine-wave superimposed on rated load  
IFSM  
125  
A
V
Maximum instantaneous forward voltage (Note 1)  
IF = 8 A  
VF  
0.975  
1.3  
1.7  
10  
400  
35  
Maximum reverse current @ Rated VR TJ=25  
TJ=125 ℃  
IR  
μA  
Maximum reverse recovery time (Note 2)  
Typical junction capacitance (Note 3)  
Typical thermal resistance  
Trr  
Cj  
ns  
pF  
80  
50  
RθJC  
TJ  
3.0  
°C/W  
°C  
Operating junction temperature range  
Storage temperature range  
- 55 to +150  
- 55 to +150  
TSTG  
°C  
Note 1: Pulse Test with PW=300μs, 1% Duty Cycle  
Note 2: Reverse Recovery Test Conditions: IF=0.5A, IR=1.0A, IRR=0.25A.  
Note 3: Measured at 1 MHz and Applied Reverse Voltage of 4.0V D.C.  
Page 1/2  
http://www.thinkisemi.com.tw/  
Rev.08T  
© 1995 Thinki Semiconductor Co., Ltd.  
SFF1601GS thru SFF1608GS  
RATINGS AND CHARACTERISTICS CURVES  
(TA=25unless otherwise noted)  
FIG. 2 TYPICAL REVERSE CHARACTERISTICS  
FIG.1 FORWARD CURRENT DERATING CURVE  
100  
10  
1
20  
TJ=100  
TJ=75  
16  
12  
8
RESISTER OR  
INDUCTIVE LOAD  
4
WITH HEATSINK  
0
TJ=25℃  
0
25  
50  
75  
100  
125  
150  
0.1  
0
20  
40  
60  
80  
100  
120  
140  
CASE TEMPERATURE (oC)  
PERCENT OF RATED PEAK REVERSE VOLTAGE (%)  
FIG. 4 TYPICAL FORWARD CHARACTERISTICS  
FIG. 3 MAXIMUM NON-REPETITIVE FORWARD  
SURGE CURRENT  
100  
SFF1601GS/SFF1602GS/SFF1603GS/SFF1604GS  
150  
120  
90  
60  
30  
0
8.3ms Single Half Sine Wave  
10  
SFF1605GS/SFF1606GS  
SFF1607GS/SFF1608GS  
1
Pulse Width=300us  
1% Duty Cycle  
1
10  
100  
0.1  
NUMBER OF CYCLES AT 60 Hz  
0.4  
0.6  
0.8  
1
1.2  
1.4  
1.6  
1.8  
FORWARD VOLTAGE (V)  
FIG. 5 TYPICAL JUNCTION CAPACITANCE  
100  
90  
80  
70  
60  
50  
40  
SFF1601GS/SFF1602GS/SFF1603GS/SFF1604GS  
SFF1605GS/SFF1606GS/SFF1607GS/SFF1608GS  
1
10  
100  
1000  
REVERSE VOLTAGE (V)  
Page 2/2  
http://www.thinkisemi.com.tw/  
Rev.08T  
© 1995 Thinki Semiconductor Co., Ltd.  

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