SFF1606GD [THINKISEMI]
16.0 Amperes Insulated Doubler Polarity Super Fast Recovery Rectifiers;
| 型号： | SFF1606GD |
| 厂家： | 
Thinki Semiconductor Co., Ltd. |
| 描述： | 16.0 Amperes Insulated Doubler Polarity Super Fast Recovery Rectifiers 二极管 |
| 文件： | 总2页 (文件大小：850K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SFF1601GD thru SFF1608GD
SFF1601GD thru SFF1608GD
Pb Free Plating Product
16.0 Amperes Insulated Doubler Polarity Super Fast Recovery Rectifiers
Unit : inch (mm)
ITO-220AB/TO-220F-3L
Features
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
Super fast switching for high efficiency
.189(4.8)
.165(4.2)
.406(10.3)
.381(9.7)
.134(3.4)
.118(3.0)
Low forward voltage drop
High current capability
Low reverse leakage current
High surge current capability
.130(3.3)
.114(2.9)
Application
Automotive Inverters and Solar Inverters
ꢀ
ꢀ
ꢀ
Plating Power Supply,SMPS and UPS
.114(2.9)
.098(2.5)
.071(1.8)
.055(1.4)
Car Audio Amplifiers and Sound Device Systems
.055(1.4)
.039(1.0)
.035(0.9)
.011(0.3)
.032(.8)
MAX
Mechanical Data
.1
(2.55)
.1
ꢀ
ꢀ
ꢀ
Case: ITO-220AB full plastic isolated package
Epoxy: UL 94V-0 rate flame retardant
Terminals: Solderable per MIL-STD-202
method 208
(2.55)
Case
Case
Case
Case
ꢀ
ꢀ
ꢀ
Polarity: As marked on diode body
Mounting position: Any
Weight: 1.75 gram approximately
Doubler
Series
Negative
Common Cathode Common Anode
Suffix "G" Suffix "GA"
Positive
Tandem Polarity Tandem Polarity
Suffix "GD"
Suffix "GS"
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (TA=25℃ unless otherwise noted)
SFF
SFF
SFF
SFF
SFF
SFF
SFF
SFF
PARAMETER
SYMBOL
UNIT
1601GD 1602GD 1603GD 1604GD 1605GD 1606GD 1607GD 1608GD
Maximum repetitive peak reverse voltage
Maximum RMS voltage
VRRM
VRMS
VDC
50
35
50
100
70
150
105
150
200
140
200
300
210
300
400
280
400
500
350
500
600
420
600
V
V
V
A
Maximum DC blocking voltage
100
Maximum average forward rectified current
IF(AV)
16
Peak forward surge current, 8.3 ms single half
sine-wave superimposed on rated load
IFSM
125
A
V
Maximum instantaneous forward voltage (Note 1)
IF = 8 A
VF
0.975
1.3
1.7
10
400
35
Maximum reverse current @ Rated VR TJ=25 ℃
TJ=125 ℃
IR
μA
Maximum reverse recovery time (Note 2)
Typical junction capacitance (Note 3)
Typical thermal resistance
Trr
Cj
ns
pF
80
50
RθJC
TJ
3.0
°C/W
°C
Operating junction temperature range
Storage temperature range
- 55 to +150
- 55 to +150
TSTG
°C
Note 1: Pulse Test with PW=300μs, 1% Duty Cycle
Note 2: Reverse Recovery Test Conditions: IF=0.5A, IR=1.0A, IRR=0.25A.
Note 3: Measured at 1 MHz and Applied Reverse Voltage of 4.0V D.C.
Page 1/2
http://www.thinkisemi.com.tw/
Rev.08T
© 1995 Thinki Semiconductor Co., Ltd.
SFF1601GD thru SFF1608GD
RATINGS AND CHARACTERISTICS CURVES
(TA=25℃ unless otherwise noted)
FIG. 2 TYPICAL REVERSE CHARACTERISTICS
FIG.1 FORWARD CURRENT DERATING CURVE
100
10
1
20
TJ=100℃
TJ=75℃
16
12
8
RESISTER OR
INDUCTIVE LOAD
4
WITH HEATSINK
0
TJ=25℃
0
25
50
75
100
125
150
0.1
0
20
40
60
80
100
120
140
CASE TEMPERATURE (oC)
PERCENT OF RATED PEAK REVERSE VOLTAGE (%)
FIG. 4 TYPICAL FORWARD CHARACTERISTICS
FIG. 3 MAXIMUM NON-REPETITIVE FORWARD
SURGE CURRENT
100
150
120
90
60
30
0
SFF1601GD/SFF1602GD/SFF1603GD/SFF1604GD
8.3ms Single Half Sine Wave
10
SFF1605GD/SFF1606GD
SFF1607GD/SFF1608GD
1
Pulse Width=300us
1% Duty Cycle
1
10
100
0.1
NUMBER OF CYCLES AT 60 Hz
0.4
0.6
0.8
1
1.2
1.4
1.6
1.8
FORWARD VOLTAGE (V)
FIG. 5 TYPICAL JUNCTION CAPACITANCE
100
90
80
70
60
50
40
SFF1601GD/SFF1602GD/SFF1603GD/SFF1604GD
SFF1605GD/SFF1606GD/SFF1607GD/SFF1608GD
1
10
100
1000
REVERSE VOLTAGE (V)
Page 2/2
http://www.thinkisemi.com.tw/
Rev.08T
© 1995 Thinki Semiconductor Co., Ltd.
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