SMD1812P014TF [THINKISEMI]
POSITIVE THERMAL COEFFICIENT(PTC) ;
| 型号： | SMD1812P014TF |
| 厂家： | 
Thinki Semiconductor Co., Ltd. |
| 描述： | POSITIVE THERMAL COEFFICIENT(PTC) |
| 文件： | 总2页 (文件大小：802K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
MUR3020GD thru MUR3060GD
MUR3020GD/MUR3040GD/MUR3060GD
Pb Free Plating Product
30 Ampere Heatsink Dual Tandem Polarity Ultra Fast Recovery Half Bridge Rectifiers
Unit : inch (mm)
TO-220AB/TO-220-3L
Features
.419(10.66)
.387(9.85)
.196(5.00)
.163(4.16)
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
Latest P/G technology with ultra fast recovery time
Low forward voltage drop
.139(3.55)
MIN
.054(1.39)
.045(1.15)
High current capability
Low reverse leakage current
High surge current capability
Application
Automotive Inverters and Solar Inverters
ꢀ
ꢀ
ꢀ
Plating Power Supply,SMPS,Motor Control and UPS
Car Audio Amplifiers and Sound Device Systems
.038(0.96)
.019(0.50)
.025(0.65)MAX
Mechanical Data
ꢀ
ꢀ
ꢀ
Case: Heatsink TO-220AB
.1(2.54)
.1(2.54)
Epoxy: UL 94V-0 rate flame retardant
Terminals: Solderable per MIL-STD-202
method 208
Polarity: As marked on diode body
Mounting position: Any
Case
Case
Case
Case
ꢀ
ꢀ
ꢀ
Doubler
Series
Negative
Positive
Common Cathode Common Anode Tandem Polarity Tandem Polarity
Suffix "GS" Suffix "GD"
Weight: 2.2 gram approximately
Suffix "GC"
Suffix "GA"
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
o
Rating at 25
C ambient temperature unless otherwise specified.
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
UNIT
SYMBOL
MUR3020GD MUR3040GD MUR3060GD
V
V
V
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
VRRM
VRMS
VDC
200
140
200
400
280
400
600
420
600
Maximum DC Blocking Voltage
Maximum Average Forward Rectified
Current TC=125oC
30.0
300
1.3
A
A
V
IF(AV)
Peak Forward Surge Current, 8.3ms single
Half sine-wave superimposed on rated load
(JEDEC method)
IFSM
Maximum Instantaneous Forward Voltage
@ 15.0 A
VF
IR
0.98
1.7
Maximum DC Reverse Current @TJ=25oC
At Rated DC Blocking Voltage @TJ=125oC
uA
uA
nS
5
100
Maximum Reverse Recovery Time (Note 1)
Typical junction Capacitance (Note 2)
Trr
CJ
35-50
150
pF
oC
Operating Junction and Storage
Temperature Range
T
J, TSTG
-55 to +150
.
= 0.5A I = 1 0A Irr = 0.25A.
F R
NOTES : (1) Reverse recovery test conditions I
(2) Thermal Resistance junction to terminal.
(3) Measured at 1.0 MHz and applied reverse voltage of 4.0 Volts DC.
Page 1/2
http://www.thinkisemi.com.tw/
Rev.08T
© 1995 Thinki Semiconductor Co., Ltd.
MUR3020GD thru MUR3060GD
FIG.2 - MAXIMUM NON-REPETITIVE
PEAK FORWARD SURGE CURRENT
FIG.1 - FORWARD CURRENT DERATING CURVE
30
25
20
15
10
5
300
250
200
150
100
50
Pulse Width 8.3ms
Single Half-Sire-Wave
(JEDEC Method)
60 Hz Resistive or
Inductive load
0
0
0
50
100
150
1
10
100
LEAD TEMPERATURE, oC
NUMBER OF CYCLES AT 60Hz
FIG.3 - TYPICAL INSTANTANEOUS
FORWARD CHARACTERISTICS
FIG.4 - TYPICAL REVERSE CHARACTERISTICS
100
150
TJ=125oC
10
1
MUR3040GD
MUR3020GD
15
MUR3060GD
1.0
0.1
TJ=25oC
TJ=25oC
PULSE WIDTH=300uS
1% DUTY CYCLE
0.1
0.01
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
0
20
40
60
80
100
INSTANTANEOUS FORWARD VOLTAGE,
VOLTS
PERCENT OF RATED PEAK REVERSE VOLTAGE,%
FIG.5 - TYPICAL JUNCTION CAPACITANCE
1000
TJ = 25oC
f = 1.0 MHZ
Vsig = 50mVp-p
100
10
0.1
1.0
4.0 10
100
REVERSE VOLTAGE, VOLTS
.
.
.
Page 2/2
Rev.08T
© 1995 Thinki Semiconductor Co., Ltd.
http://www.thinkisemi.com.tw/
相关型号：
©2020 ICPDF网 联系我们和版权申明