TUR3060CTG [THINKISEMI]

30 Ampere Heatsink Dual Common Cathode Ultra Fast Recovery Rectifiers;
TUR3060CTG
型号: TUR3060CTG
厂家: Thinki Semiconductor Co., Ltd.    Thinki Semiconductor Co., Ltd.
描述:

30 Ampere Heatsink Dual Common Cathode Ultra Fast Recovery Rectifiers

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中文:  中文翻译
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TUR3020CTG thru TUR3060CTG  
TUR3020CTG/TUR3040CTG/TUR3060CTG  
Pb Free Plating Product  
30 Ampere Heatsink Dual Common Cathode Ultra Fast Recovery Rectifiers  
Unit : inch (mm)  
TO-220AB/TO-220-3L  
Features  
.419(10.66)  
.387(9.85)  
.196(5.00)  
.163(4.16)  
ThinkiSemi P/G technology with ultra fast recovery time  
Low forward voltage drop  
.139(3.55)  
MIN  
.054(1.39)  
.045(1.15)  
Case  
High current capability  
Low reverse leakage current  
High surge current capability  
Application  
Automotive Inverters and Solar Inverters  
Plating Power Supply,SMPS,Motor Control and UPS  
Car Audio Amplifiers and Sound Device Systems  
.038(0.96)  
.019(0.50)  
.025(0.65)MAX  
Mechanical Data  
Case: Heatsink TO-220AB/TO-220-3L  
Epoxy: UL 94V-0 rate flame retardant  
Terminals: Solderable per MIL-STD-202  
method 208  
Polarity: As marked on diode body  
Mounting position: Any  
.1(2.54)  
.1(2.54)  
Internal Configuration  
Case  
Case  
Case  
Case  
Doubler  
Tandem Polarity Tandem Polarity  
Suffix "CTD" Suffix "CTS"  
Series  
Negative  
Common Cathode Common Anode  
Suffix "CTG" Suffix "CTA"  
Positive  
Weight: 2.2 gram approximately  
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS  
o
Rating at 25  
C ambient temperature unless otherwise specified.  
Single phase, half wave, 60Hz, resistive or inductive load.  
For capacitive load, derate current by 20%.  
UNIT  
SYMBOL  
TUR3020CTG TUR3040CTG TUR3060CTG  
V
V
V
Maximum Recurrent Peak Reverse Voltage  
Maximum RMS Voltage  
VRRM  
VRMS  
VDC  
200  
140  
200  
400  
280  
400  
600  
420  
600  
Maximum DC Blocking Voltage  
Maximum Average Forward Rectified  
30.0  
450  
1.3  
A
A
V
IF(AV)  
o
(Total Device 2x15A=30A)  
Current TC=125 C  
Peak Forward Surge Current, 8.3ms single  
Half sine-wave superimposed on rated load  
(JEDEC method)  
IFSM  
Maximum Instantaneous Forward Voltage  
VF  
IR  
0.98  
1.7  
(Per Diode/Per Leg)  
@ 15.0 A  
Maximum DC Reverse Current @TJ=25oC  
At Rated DC Blocking Voltage @TJ=125oC  
uA  
uA  
nS  
5
50  
Maximum Reverse Recovery Time (Note 1)  
Typical junction Capacitance (Note 2)  
Trr  
CJ  
25-50  
150  
pF  
oC  
Operating Junction and Storage  
Temperature Range  
T
J, TSTG  
-55 to +175  
.
= 0.5A I = 1 0A Irr = 0.25A.  
F R  
NOTES : (1) Reverse recovery test conditions I  
(2) Thermal Resistance junction to terminal.  
(3) Measured at 1.0 MHz and applied reverse voltage of 4.0 Volts DC.  
Page 1/2  
http://www.thinkisemi.com.tw/  
Rev.10T  
© 1995 Thinki Semiconductor Co., Ltd.  
TUR3020CTG thru TUR3060CTG  
FIG.2 - MAXIMUM NON-REPETITIVE  
PEAK FORWARD SURGE CURRENT  
FIG.1 - FORWARD CURRENT DERATING CURVE  
30  
25  
20  
15  
10  
5
450  
Pulse Width 8.3ms  
Single Half-Sire-Wave  
(JEDEC Method)  
225  
60 Hz Resistive or  
Inductive load  
0
0
0
50  
100  
150  
1
10  
100  
LEAD TEMPERATURE, oC  
NUMBER OF CYCLES AT 60Hz  
FIG.3 - TYPICAL INSTANTANEOUS  
FORWARD CHARACTERISTICS  
FIG.4 - TYPICAL REVERSE CHARACTERISTICS  
100  
150  
TJ=125oC  
10  
1
TUR3040CTG  
TUR3020CTG  
15  
TUR3060CTG  
1.0  
0.1  
TJ=25oC  
TJ=25oC  
PULSE WIDTH=300uS  
1% DUTY CYCLE  
0.1  
0.01  
0.2  
0.4  
0.6  
0.8  
1.0  
1.2  
1.4  
1.6  
0
20  
40  
60  
80  
100  
INSTANTANEOUS FORWARD VOLTAGE,  
VOLTS  
PERCENT OF RATED PEAK REVERSE VOLTAGE,%  
FIG.5 - TYPICAL JUNCTION CAPACITANCE  
1000  
TJ = 25oC  
f = 1.0 MHZ  
Vsig = 50mVp-p  
100  
10  
0.1  
1.0  
4.0 10  
100  
REVERSE VOLTAGE, VOLTS  
.
.
.
Page 2/2  
Rev.10T  
© 1995 Thinki Semiconductor Co., Ltd.  
http://www.thinkisemi.com.tw/  

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