U20100RG [THINKISEMI]

20.0 Ampere Heatsink Common Anode Ultra Fast Recovery Rectifiers;
U20100RG
型号: U20100RG
厂家: Thinki Semiconductor Co., Ltd.    Thinki Semiconductor Co., Ltd.
描述:

20.0 Ampere Heatsink Common Anode Ultra Fast Recovery Rectifiers

文件: 总2页 (文件大小:349K)
中文:  中文翻译
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U2080RG thru U20120RG  
U2080RG/U20100RG/U20120RG  
Pb Free Plating Product  
20.0 Ampere Heatsink Common Anode Ultra Fast Recovery Rectifiers  
Unit : inch (mm)  
TO-220AB/TO-220-3L  
Features  
.419(10.66)  
.387(9.85)  
.196(5.00)  
.163(4.16)  
Fast switching for high efficiency  
Low forward voltage drop  
High current capability  
.139(3.55)  
MIN  
.054(1.39)  
.045(1.15)  
Low reverse leakage current  
High surge current capability  
Application  
Automotive Inverters and Solar Inverters  
Plating Power Supply,SMPS and UPS  
Car Audio Amplifiers and Sound Device Systems  
.038(0.96)  
.019(0.50)  
.025(0.65)MAX  
Mechanical Data  
Case: Heatsink TO-220AB open metal package  
Epoxy: UL 94V-0 rate flame retardant  
Terminals: Solderable per MIL-STD-202  
method 208  
.1(2.54)  
.1(2.54)  
A
K
A
K
K
K
A
Case  
A
K
Case  
K
A
A
K
A
Case  
Case  
Polarity: As marked on diode body  
Mounting position: Any  
Weight: 2.2 gram approximately  
Doubler  
Series  
Negative  
Positive  
Common Cathode Common Anode Tandem Polarity Tandem Polarity  
Suffix "DG" Suffix "SG"  
Suffix "G"  
Suffix "RG"  
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS  
Rating at 25 ambient temperature unless otherwise specified.  
Single phase, half wave, 60Hz, resistive or inductive load.  
For capacitive load, derate current by 20%.  
UNIT  
SYMBOL  
U2080RG  
U20100RG U20120RG  
V
V
V
Maximum Recurrent Peak Reverse Voltage  
Maximum RMS Voltage  
V
RRM  
RMS  
800  
560  
800  
1000  
700  
1200  
840  
V
Maximum DC Blocking Voltage  
V
DC  
1000  
1200  
Maximum Average Forward Rectified  
(Total Device 2x10A=20A)  
Current TC  
=125  
20.0  
200  
1.7  
A
A
V
IF(AV)  
Peak Forward Surge Current, 8.3ms single  
Half sine-wave superimposed on rated load  
(JEDEC method)  
I
FSM  
Maximum Instantaneous Forward Voltage  
V
F
(Per Diode/Per Leg)  
@ 10.0 A  
5.0  
100  
μA  
μA  
Maximum DC Reverse Current @T  
At Rated DC Blocking Voltage @T  
J
=25  
I
R
J
=125  
nS  
pF  
Maximum Reverse Recovery Time (Note 1)  
Typical junction Capacitance (Note 2)  
Typical Thermal Resistance (Note 3)  
Trr  
75  
90  
1.5  
C
J
R
JC  
/W  
Operating Junction and Storage  
Temperature Range  
-55 to + 150  
T , TSTG  
J
NOTES : (1) Reverse recovery test conditions IF= 0.5A, IR= 1.0A, Irr = 0.25A.  
(2) Measured at 1.0 MHz and applied reverse voltage of 4.0 Volts DC.  
(3) Thermal Resistance junction to case.  
Page 1/2  
http://www.thinkisemi.com.tw/  
Rev.10T  
© 1995 Thinki Semiconductor Co., Ltd.  
U2080G thru U20120G  
FIG.2 - MAXIMUM NON-REPETITIVE  
PEAK FORWARD SURGE CURRENT  
FIG.1 - FORWARD CURRENT DERATING CURVE  
20  
17  
14  
11  
8
200  
175  
150  
125  
100  
75  
Pulse Width 8.3ms  
Single Half-Sire-Wave  
(JEDEC Method)  
50  
4
25  
60 Hz Resistive or  
Inductive load  
0
0
0
50  
100  
150  
1
10  
100  
NUMBER OF CYCLES AT 60Hz  
CASE TEMPERATURE,  
FIG.3 - TYPICAL INSTANTANEOUS  
FORWARD CHARACTERISTICS  
FIG.4 - TYPICAL REVERSE CHARACTERISTICS  
1000  
20  
TJ=125  
100  
10  
10  
TJ=25℃  
5
1
1
TJ=25℃  
PULSE WIDTH=300uS  
1% DUTY CYCLE  
0.1  
0.2  
0.4  
0.6  
0.8  
1.0  
1.2  
1.4  
1.6  
0
20  
40  
60  
80  
100  
INSTANTANEOUS FORWARD VOLTAGE,  
VOLTS  
PERCENT OF RATED PEAK REVERSE VOLTAGE,%  
FIG.5 - TYPICAL JUNCTION CAPACITANCE  
2000  
1000  
500  
TJ = 25  
f = 1.0 MHZ  
Vsig = 50mVp-p  
0.1  
1.0  
4.0 10  
100  
REVERSE VOLTAGE, VOLTS  
Page 2/2  
Rev.10T  
© 1995 Thinki Semiconductor Co., Ltd.  
http://www.thinkisemi.com.tw/  

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