UF10C10D [THINKISEMI]

10.0 Ampere Heatsink Dual Doubler Polarity Ultra Fast Recovery Rectifiers;


型号：	UF10C10D
厂家：	Thinki Semiconductor Co., Ltd.
描述：	10.0 Ampere Heatsink Dual Doubler Polarity Ultra Fast Recovery Rectifiers
文件：	总2页 (文件大小：264K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

UF10C20D thru UF10C60D

UF10C20D/UF10C40D/UF10C60D

Pb Free Plating Product

10.0 Ampere Heatsink Dual Doubler Polarity Ultra Fast Recovery Rectifiers

TO-220AB/TO-220-3L

Unit:inch(mm)

Features

.419(10.66)

.387(9.85)

.196(5.00)

.163(4.16)

※ ThinkiSemi latest&matured process FRD/FRED

.139(3.55)

MIN

※ Fast switching for high efficiency

※ Low forward voltage drop

※ High current capability

.054(1.39)

.045(1.15)

※ Low reverse leakage current

※ High surge current capability

Application

※ Automotive Inverters and Solar Inverters

※ Car Audio Amplifiers and Sound Device Systems

※ Plating Power Supply,Motor Control,UPS and SMPS etc.

.038(0.96)

.019(0.50)

.025(0.65)MAX

Mechanical Data

.1(2.54)

※ Case: Open Metal Package TO-220AB/TO-220-3L

※ Epoxy: UL 94V-0 rate flame retardant

※ Terminals: Solderable per MIL-STD-202 method 208

※ Polarity: As marked on diode body

※ Mounting position: Any

Case

※ Weight: 2.2 gram approximately

Doubler

Tandem Polarity

Suffix "D"

Series

Tandem Polarity

Suffix "S"

Negative

Common Anode

Suffix "A"

Positive

Common Cathode

Suffix "C"

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS

Rating at 25℃ ambient temperature unless otherwise specified.

Single phase,half wave,60Hz,resistive or inductive load.

For capacitive load, derate current by 20%.

UF10C10D

UF10C20D

UF10C30D

UF10C50D

UF10C60D

PARAMETER

SYMBOL

UNIT

UF10C40D

Maximum Recurrent Peak Reverse Voltage

Maximum RMS Voltage

VRRM

VRMS

VDC

200

140

200

400

280

400

600

420

600

Maximum DC Blocking Voltage

Maximum Average Forward Rectified

Current Tc=100°C

10.0

125

IF(AV)

IFSM

(Total Device 2x5.0A=10.0A)

Peak Forward Surge Current, 8.3ms single Half

sine-wave superimposed on rated load (JEDEC

method)

Maximum Instantaneous Forward Voltage

@5.0A

0.85-0.95

1.00-1.25

1.25-1.50

(Per Diode/Per Leg)

Maximum DC Reverse Current @TJ=25°C

At Rated DC Blocking Voltage @TJ=125°C

1.0

5.0

μA

Maximum Reverse Recovery Time (Note1)

Typical Junction Capacitance (Note 2)

Typical Thermal Resistance (Note 3)

25-35

Trr

1.5

RθJC

°C/W

Operating Junction and Storage

Temperature Range

-55 to +175

TJ,TSTG

°C

Note:(1)Reverse recovery test conditions IF = 0.5A, IR = 1.0A, Irr = 0.25A.

Note:(2)Measured at 1.0 MHz and applied reverse voltage of 4.0 Volts DC.

Note:(3)Thermal Resistance junction to case.

Page 1/2

http://www.thinkisemi.com.tw/

Rev.10T

UF10C20D thru UF10C60D

FIG.2 - MAXIMUM NON-REPETITIVE

PEAK FORWARD SURGE CURRENT

FIG.1 - FORWARD CURRENT DERATING CURVE

125

100

Pulse Width 8.3ms

Single Half-Sire-Wave

(JEDEC Method)

60 Hz Resistive or

Inductive load

100

150

100

CASE TEMPERATURE, ^oC

NUMBER OF CYCLES AT 60Hz

FIG.3 - TYPICAL INSTANTANEOUS

FORWARD CHARACTERISTICS

FIG.4 - TYPICAL REVERSE CHARACTERISTICS

1000

UF10C10D/UF10C20D

TJ=125^oC

100

UF10C30D/UF10C40D

UF10C50D/UF10C60D

TJ=25^oC

PULSE WIDTH=300uS

1% DUTY CYCLE

0.1

0.2

0.4

0.6

0.8

1.0

1.2

1.4

1.6

100

INSTANTANEOUS FORWARD VOLTAGE,

VOLTS

PERCENT OF RATED PEAK REVERSE VOLTAGE,%

FIG.5 - TYPICAL JUNCTION CAPACITANCE

1000

TJ = 25^oC

f = 1.0 MHZ

Vsig = 50mVp-p

100

0.1

1.0

4.0 10

100

REVERSE VOLTAGE, VOLTS

Page 2/2

Rev.10T

http://www.thinkisemi.com.tw/

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