UF1601E [THINKISEMI]
16Ampere Heat Sink Dual Series Connection High Efficiency Rectifiers;
| 型号： | UF1601E |
| 厂家： | 
Thinki Semiconductor Co., Ltd. |
| 描述： | 16Ampere Heat Sink Dual Series Connection High Efficiency Rectifiers |
| 文件： | 总3页 (文件大小：3916K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
FFPF60SB60DS
FFPF60SB60DS
Pb Free Plating Product
8Amperes,600Volts Insulated Dual Series Connection Ultra Fast Soft Recovery Rectifiers
ITO-220AB/TO-220F-3L
Unit : inch (mm)
Application
.189(4.8)
.406(10.3)
.165(4.2)
.381(9.7)
· Freewheeling, Snubber, Clamp
· Inversion Welder
· PFC
.134(3.4)
.130(3.3)
.114(2.9)
.118(3.0)
· Plating Power Supply
· Ultrasonic Cleaner and Welder
· Converter & Chopper
· UPS
.114(2.9)
.098(2.5)
.071(1.8)
.055(1.4)
.055(1.4)
.039(1.0)
.035(0.9)
.011(0.3)
.032(.8)
MAX
Product Feature
· Ultrafast Recovery Time
.1
(2.55)
.1
(2.55)
· Soft Recovery Characteristics
· 150 Operating Junction Temperature
℃
Case
Case
Case
Case
· Low Forward Voltage
Doubler
Tandem Polarity Tandem Polarity
Suffix "DD" Suffix "DS"
Series
Negative
Common Cathode Common Anode
Suffix "DN" Suffix "DP"
Positive
· High Surge Current Capability
· Low Leakage Current
General Description
FFPF60SB60DS using ThinkiSemi lastest FRED FAB process(planar passivation pellet) with ultrafast soft recovery characteristics.
Absolute Maximum Ratings TC = 25 unless otherwise noted
℃
Symbol
VRRM
Parameter
Ratings
600
Units
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
V
V
V
A
VRWM
VR
600
600
IF(AV)
Average Rectified Forward Current
@ TC = 100℃
4
Non-repetitive Peak Surge Current
60Hz Single Half-Sine Wave
IFSM
40
A
TJ, TSTG
Operating and Storage Temperature Range
-65 to +150
℃
Thermal Characteristics
Symbol
Parameter
Maximum Thermal Resistance, Junction to Case
Ratings
Units
RθJC
8.7
℃/W
Page 1/3
http://www.thinkisemi.com.tw/
Rev.08T
© 1995 Thinki Semiconductor Co., Ltd.
FFPF60SB60DS
℃
Electrical Characteristics TC = 25 unless otherwise noted
Symbol
FM1
RM1
Parameter
Min.
Typ.
Max.
Units
℃
I
F = 4A
TC = 25
TC = 125℃
TC = 25
-
-
2.2
1.7
2.6
-
V
V
IF = 4A
V
V
R = 600V
R = 600V
-
-
-
-
100
500
℃
I
µA
TC = 125
℃
trr
IF = 1A, di/dt = 100A/µs, VR = 30V
TC = 25
-
16
23
ns
℃
trr
Irr
-
-
-
-
18
2
0.7
18
25
-
-
ns
A
IF = 4A, di/dt = 200A/µs, VR = 390V
TC = 25℃
S factor
Qrr
-
nC
trr
Irr
-
-
-
-
45
2.8
1.8
64
-
-
-
-
ns
A
IF = 4A, di/dt = 200A/µs, VR = 390V
TC = 125℃
S factor
Qrr
nC
mJ
WAVL
Avalanche Energy ( L = 40mH)
5
-
-
Notes:
1: Pulse: Test Pulse width = 300µs, Duty Cycle = 2%
Test Circuit and Waveforms
Page 2/3
http://www.thinkisemi.com.tw/
Rev.08T
© 1995 Thinki Semiconductor Co., Ltd.
FFPF60SB60DS
Typical Performance Characteristics
Figure 1. Typical Forward Voltage Drop
vs. Forward Current
Figure 2. Typical Reverse Current
vs. Reverse Voltage
40
10
50
10
TC = 125
℃
TC = 125
℃
1
0.1
75
℃
25
℃
TC = 75
℃
1
0.01
1E-3
TC = 25
℃
0.1
10
100
200
300
400
500
600
0
1
2
3
4
5
Reverse Voltage, VR [V]
Forward Voltage, VF [V]
Figure 3. Typical Junction Capacitance
Figure 4. Typical Reverse Recovery Time
vs. di/dt
60
50
40
50
Typical Capacitance
at 0V = 43 pF
40
30
20
10
0
TC = 125
℃
30
20
10
TC = 75
℃
TC = 25
℃
100
200
300
400
500
600
0.1
1
10
100
Reverse Voltage, VR [V]
di/dt [A/µs]
Figure 5. Typical Reverse Recovery
Figure 6. Forward Current Derating Curve
Current vs. di/dt
7
9
6
5
6
3
0
TC = 125
℃
4
3
2
1
TC = 75
℃
TC = 25
℃
100
200
300
400
500
600
25
50
75
100
125
150
di/dt [A/µs]
Case temperature, TC
[
℃
]
Page 3/3
http://www.thinkisemi.com.tw/
Rev.08T
© 1995 Thinki Semiconductor Co., Ltd.
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