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UGF10L08GA 10.0 Amperes Insulated Dual Common Anode Ultra Fast Recovery Rectifiers
Prototype PCB
Part No.:   UGF10L08GA
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Description:   10.0 Amperes Insulated Dual Common Anode Ultra Fast Recovery Rectifiers
File Size :   811 K    
Page : 2 Pages
Logo:   
Maker   THINKISEMI [ Thinki Semiconductor Co., Ltd. ]http://www.thinkisemi.com
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  UGF10L08GA Datasheet PDF page 2  
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UGF10L08GA
Pb Free Plating Product
UGF10L08GA
Pb
10.0 Amperes Insulated Dual Common Anode Ultra Fast Recovery Rectifiers
Application
Mechanical Data
Case: ITO-220AB full plastic isolated package
Epoxy: UL 94V-0 rate flame retardant
Terminals: Solderable per MIL-STD-202
method 208
Polarity: As marked on diode body
Mounting position: Any
Weight: 1.75 gram approximately
.055(1.4)
.039(1.0)
.035(0.9)
.011(0.3)
.1
(2.55)
.1
(2.55)
.161(4.1)MAX
.543(13.8)
.512(13.0)
Automotive Inverters and Solar Inverters
Plating Power Supply,SMPS and UPS
Car Audio Amplifiers and Sound Device Systems
.606(15.4)
.583(14.8)
Features
Ultra fast soft recovery switching for high efficiency
Low forward voltage drop
High current capability
Low reverse leakage current
High surge current capability
ITO-220AB/TO-220F-3L
.112(2.85)
.100(2.55)
.272(6.9)
.248(6.3)
.406(10.3)
.381(9.7)
.134(3.4)
.118(3.0)
Unit : inch (mm)
.189(4.8)
.165(4.2)
.130(3.3)
.114(2.9)
.071(1.8)
.055(1.4)
.114(2.9)
.098(2.5)
.032(.8)
MAX
Case
Case
Case
Case
Negative
Positive
Common Cathode Common Anode
Suffix "G"
Suffix "GA"
Doubler
Tandem Polarity
Suffix "GD"
Series
Tandem Polarity
Suffix "GS"
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
(T
A
=25°C unless otherwise noted)
PARAMETER
Maximum repetitive peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forward rectified current
Peak forward surge current, 8.3 ms single half sine-wave
superimposed on rated load
Maximum instantaneous forward voltage (Note 1)
I
F
= 5 A
Maximum reverse current @ rated V
R
Maximum reverse recovery time (Note 2)
Typical thermal resistance
Operating junction temperature range
Storage temperature range
Note 1: Pulse test with PW=300μs, 1% duty cycle
Note 2: Test conditions: I
F
=0.5A, I
R
=1.0A, I
RR
=0.25A
T
J
=25°C
T
J
=125°C
SYMBOL
V
RRM
V
RMS
V
DC
I
F(AV)
I
FSM
V
F
I
R
t
rr
R
θJC
T
J
T
STG
UGF10L08GA
600
420
600
10
70
1.7
10
100
25
4.5
- 55 to +150
- 55 to +150
UNIT
V
V
V
A
A
V
μA
ns
°C/W
°C
°C
Rev.08T
© 1995 Thinki Semiconductor Co., Ltd.
Page 1/2
http://www.thinkisemi.com.tw/
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