YG902C2 [THINKISEMI]
10 Ampere Dual Common Cathode Ultra Fast Recovery Half Bridge Rectifiers;
| 型号： | YG902C2 |
| 厂家： | 
Thinki Semiconductor Co., Ltd. |
| 描述： | 10 Ampere Dual Common Cathode Ultra Fast Recovery Half Bridge Rectifiers 快速恢复二极管 局域网 |
| 文件： | 总2页 (文件大小：667K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
YG902C2 thru YG902C6
YG902C2 thru YG902C6
Pb Free Plating Product
10 Ampere Dual Common Cathode Ultra Fast Recovery Half Bridge Rectifiers
ITO-220AB
Unit:mm
Features
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Latest GPP technology with super fast recovery time
Low forward voltage drop
High current capability
Low reverse leakage current
High surge current capability
Application
Automotive Inverters and Solar Inverters
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Plating Power Supply,SMPS,EPS and UPS
Car Audio Amplifiers and Sound Device Systems
Mechanical Data
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Case: Fully Insulated Molding TO-220F
Epoxy: UL 94V-0 rate flame retardant
Terminals: Solderable per MIL-STD-202
method 208
Polarity: As marked on diode body
Mounting position: Any
Case
Case
Case
Case
Doubler
Series Connection
Negative
Positive
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Tandem Polarity Tandem Polarity
Common Cathode Common Anode
Suffix "C2"
Suffix "C4"
Suffix "C6"
Suffix "N2"
Suffix "N4"
Suffix "N6"
Suffix "D2"
Suffix "D4"
Suffix "D6"
Suffix "S2"
Suffix "S4"
Suffix "S6"
Weight: 2.0 gram approximately
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Rating at 25oC ambient temperature unless otherwise specified.
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
UNIT
SYMBOL
YG902C2 YG902C4
YG902C6
V
V
V
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
VRRM
VRMS
VDC
200
140
200
400
280
400
600
420
600
Maximum DC Blocking Voltage
Maximum Average Forward Rectified
Current TC=100oC
10.0
100
1.3
A
A
V
IF(AV)
Peak Forward Surge Current, 8.3ms single
Half sine-wave superimposed on rated load
(JEDEC method)
IFSM
Maximum Instantaneous Forward Voltage
@ 5.0 A
1.7
VF
IR
0.98
Maximum DC Reverse Current @TJ=25oC
At Rated DC Blocking Voltage @TJ=125oC
uA
uA
nS
5.0
100
Maximum Reverse Recovery Time (Note 1)
Typical junction Capacitance (Note 2)
Typical Thermal Resistance (Note 3)
Trr
CJ
35
65
pF
o
R JC
2.2
C/W
Operating Junction and Storage
Temperature Range
o
C
-55 to +150
TJ, TSTG
NOTES : (1) Reverse recovery test conditions IF = 0.5A, IR = 1.0A, Irr = 0.25A.
(2) Measured at 1.0 MHz and applied reverse voltage of 4.0 Volts DC.
(3) Thermal Resistance junction to case.
Page 1/2
http://www.thinkisemi.com/
Rev.05
© 2006 Thinki Semiconductor Co., Ltd.
YG902C2 thru YG902C6
FIG.2 - MAXIMUM NON-REPETITIVE
PEAK FORWARD SURGE CURRENT
FIG.1 - FORWARD CURRENT DERATING CURVE
10
8
100
80
60
40
20
0
Pulse Width 8.3ms
Single Half-Sire-Wave
(JEDEC Method)
6
4
2
60 Hz Resistive or
Inductive load
0
0
50
100
150
1
10
100
CASE TEMPERATURE, oC
NUMBER OF CYCLES AT 60Hz
FIG.3 - TYPICAL INSTANTANEOUS
FORWARD CHARACTERISTICS
FIG.4 - TYPICAL REVERSE CHARACTERISTICS
1000
50
YG902C2
TJ=125oC
100
YG902C4
YG902C6
5
10
TJ=25oC
1
1
TJ=25oC
PULSE WIDTH=300uS
1% DUTY CYCLE
0.1
0.1
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
0
20
40
60
80
100
INSTANTANEOUS FORWARD VOLTAGE,
VOLTS
PERCENT OF RATED PEAK REVERSE VOLTAGE,%
FIG.5 - TYPICAL JUNCTION CAPACITANCE
1000
TJ = 25oC
f = 1.0 MHZ
Vsig = 50mVp-p
100
10
0.1
1.0
4.0 10
100
REVERSE VOLTAGE, VOLTS
Page 2/2
Rev.05
© 2006 Thinki Semiconductor Co., Ltd.
http://www.thinkisemi.com/
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