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1N6099T26A [TI]

150V, SILICON, SIGNAL DIODE;

1N6099T26A


元器件型号：	1N6099T26A
生产厂家：	TEXAS INSTRUMENTS
描述和应用：	150V, SILICON, SIGNAL DIODE 二极管
PDF文件：	总2页 (文件大小：148K)
下载文档：	下载PDF数据表文档文件
型号参数：1N6099T26A参数

1N6099T26R

150V, SILICON, SIGNAL DIODE

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0 TI

1N609A

STUD BASE RECTIFIERS

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1 NJSEMI

1N60A

Optimized for Radio Frequency Response

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99 MICROSEMI

1N60A

GOLD BONDED DIODES

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138 ETC

1N60A

GOLD BONDED DIODES

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275 ETC

1N60A

0.5 Amps, 600 Volts N-CHANNEL MOSFET

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138 UTC-IC

1N60A

0.5A, 600V N-CHANNEL POWER MOSFET

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71 UTC-IC

1N60A_09

0.5 Amps, 600/650 Volts N-CHANNEL MOSFET

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18 UTC-IC

1N60A_11

0.5A, 600V N-CHANNEL POWER MOSFET

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15 UTC-IC

1N60A_15

N-CHANNEL POWER MOSFET

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0 UTC

1N60AG-AA3-R

Small Signal Field-Effect Transistor

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0 UTC-IC

1N60AG-A-T92-B

Power Field-Effect Transistor, 0.5A I(D), 600V, 15ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-92, HALOGEN FREE PACKAGE-3

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0 UTC-IC

1N60AG-A-T92-K

Power Field-Effect Transistor, 0.5A I(D), 600V, 15ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-92, HALOGEN FREE PACKAGE-3

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0 UTC-IC

1N60AG-B-T92-B

Power Field-Effect Transistor, 0.5A I(D), 650V, 15ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-92, HALOGEN FREE PACKAGE-3

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1 UTC-IC

1N60AG-B-T92-K

Power Field-Effect Transistor, 0.5A I(D), 650V, 15ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-92, HALOGEN FREE PACKAGE-3

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0 UTC-IC

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