5962-0254401QPA [TI]
OP-AMP, 800uV OFFSET-MAX, CDIP8, CERAMIC, DIP-8;
| 型号： | 5962-0254401QPA |
| 厂家： | 
TEXAS INSTRUMENTS |
| 描述： | OP-AMP, 800uV OFFSET-MAX, CDIP8, CERAMIC, DIP-8 CD |
| 文件： | 总13页 (文件大小：159K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
National Semiconductor is now part of
Texas Instruments.
Search http://www.ti.com/ for the latest technical
information and details on our current products and services.
MICROCIRCUIT DATA SHEET
Original Creation Date: 07/28/03
Last Update Date: 08/20/03
MNLMH6624-X REV 1A0
Last Major Revision Date: 08/19/03
ULTRA LOW NOISE WIDEBAND OP AMP
General Description
The LMH6624 combines a wide bandwidth (1.5GHz GBW) with very low input noise
(092nV/SqRtHz, 2.3pA/SqRtHz) and ultra low dc errors (100uV Vos, +0.1uV/ C drift) to
provide a very precise operational amplifier with wide dynamic-range. This enables the
user to achieve closed-loop gains of greater than 10.
The LMH6624's traditional voltage feedback topology provides the following benefits:
balanced inputs, low offsets voltage and offset current, very low offset drift, 81dB
open-loop gain, 95dB common mode rejection ratio, and 88dB power supply rejection ratio.
The LMH6624 operates from +2.5V to +6V in dual supply mode and from +5V to +12V in single
supply configuration. The LMH6624 is stable for closed-loop gain of Av < -10 or +10 <AV.
LMH6624 is offered in SQT23-5 and SIOC-8 packages.
Industry Part Number
NS Part Numbers
LMH6624
LMH6624J-QML
LMH6624J-QMLV
LMH6624WG-QML
LMH6624WG-QMLV
Prime Die
LMH6624A
Controlling Document
SEE FEATURES SECTION
Processing
Subgrp Description
Temp (oC)
MIL-STD-883, Method 5004
1
Static tests at
+25
2
Static tests at
+125
-55
3
Static tests at
4
Dynamic tests at
Dynamic tests at
Dynamic tests at
Functional tests at
Functional tests at
Functional tests at
Switching tests at
Switching tests at
Switching tests at
+25
Quality Conformance Inspection
5
+125
-55
6
MIL-STD-883, Method 5005
7
+25
8A
8B
9
+125
-55
+25
10
11
+125
-55
1
MICROCIRCUIT DATA SHEET
MNLMH6624-X REV 1A0
Features
- 1.5GHz gain-bandwidth product
- 0,92nV/SqRtHz input voltage noise
- 800uV input offset voltage
- 350V/us slew rate
- 400V/us slew rate (Av = 10)
- -65dBc HD2 @ f = 10MHZ, Rl = 100 Ohms
- -80dBc HD3 @ f = 10MHZ, Rl = 100 Ohms
- +2.5V to +6V Supply voltage range (dual supply)
- +5V to +12V Supply voltage range (single supply)
- Improved replacement for the CLC425
CONTROLLING DOCUMENT:
LMH6624J-QML
LMH6624J-QMLV
LMH6624WG-QML
LMH6624WG-QMLV
5962-0254401QPA
5962-0254401VPA
5962-0254401QZA
5962-0254401VZA
Applications
- Instrumentation sense amplifiers
- Ultrasound pre-amps
- Magnetic tape & disk pre-amps
- Wide band active filters
- Professional audio systems
- Opto-electronics
- Medical diagnostic systems
2
MICROCIRCUIT DATA SHEET
MNLMH6624-X REV 1A0
(Absolute Maximum Ratings)
(Note 1)
Supply Voltage (Vs)
+6 Vdc
V+ - V-
+1.2V
Common Mode Input Voltage (Vcm)
Differential Input Voltage (Vin)
Maximum Power Dissipation (Pd)
(Note 2)
1.0W
Lead Temperature
(Soldering, 10 seconds)
+300 C
+175 C
Junction Temperature (Tj)
Storage Temperature Range
-65 C < Ta < +150 C
Thermal Resistance
ThetaJa
Junction-to-ambient
CERAMIC DIP
(Still Air Flow)
(500LF/Min Air Flow)
CERAMIC SOIC
130 C/W
70 C/W
(Still Air Flow)
(500LF/Min Air Flow)
180 C/W
115 C/W
ThetaJC
CERAMIC DIP
CERAMIC SOIC
17 C/W
20 C/W
Package Weight
(Typical)
CERAMIC DIP
CERAMIC SOIC
1090mg
220mg
ESD Tolerance
(Note 3)
ESD Rating
2000 V
Note 1: Absolute Maximum Ratings are limits beyond which damage to the device may occur.
Operating Ratings are conditions for which the device is functional, but do not
guarantee specific performance limits. For guaranteed specifications and test
conditions see the Electrical Characteristics. The guaranteed specifications apply
only for the test conditions listed. Some performance characteristics may degrade
when the device is not operated within the listed test conditions.
Note 2: The maximum power dissipation must be derated at elevated temperatures and is
dictated by Tjmax (maximum junction temperature), ThetaJA (package junction to
ambient thermal resistance), and TA (ambient temperature). The maximum allowable
power dissipation at any temperature is Pdmax = (Tjmax - TA) / ThetaJA or the number
given in the Absolute Maximum Ratings, whichever is lower.
Note 3: Human body model, 100 pF discharged through 1.5K Ohms.
3
MICROCIRCUIT DATA SHEET
MNLMH6624-X REV 1A0
Recommended Operating Conditions
Supply Voltage (Vs)
+5Vdc
-55 C < Ta < +125 C
Ambient Operating Temperature Range (TA)
4
MICROCIRCUIT DATA SHEET
MNLMH6624-X REV 1A0
Electrical Characteristics
DC PARAMETERS: Static and DC Tests
(The following conditions apply to all the following parameters, unless otherwise specified.)
DC: Vs = +5 Vdc, Av = +20, load resistance (Rl = 100 Ohms), feedback resistance (Rf) = 500 Ohms, and gain
setting resistance (Rg) = 26.1 Ohms.
-55 C < Ta < +125 C (Note 3).
PIN-
NAME
SUB-
SYMBOL PARAMETER
CONDITIONS NOTES
MIN
-20
MAX UNIT
GROUPS
Iin
Vio
Input Bias
+20
uA
1, 2,
3
Current
Input Offset
Voltage
-0.8
-1
+0.8
+1
mV
mV
mA
mA
dB
1
2, 3
1, 2
3
Is
Supply Current
Rl = infinite
16
18
PSRR
AOL
Power Supply
+Vs = +4.0V to +5.0V,
-Vs = -4.0V to -5.0V
75
1, 2,
3
Rejection Ratio
Open Loop Gain
77
72
dB
dB
4
5, 6
AC PARAMETERS: Frequency Domain Tests
(The following conditions apply to all the following parameters, unless otherwise specified.)
AC: Vs = +5 Vdc, Av = +20, load resistance (Rl = 100 Ohms), feedback resistance (Rf) = 500 Ohms, and gain
setting resistance (Rg) = 26.1 Ohms.
-55 C < Ta < +125 C (Note 3).
SSBW
GFP
Small Signal
Bandwidth
-3 dB bandwidth, Vout < 0.4 Vpp
2
75
MHz
dB
9
9
9
Gain Flatness
Peaking Low
0.1 MHz to 30 MHz, Vout < 0.4 Vpp
0.1 MHz to 30 MHz, Vout < 0.4 Vpp
2
2
0.7
1.0
GFR
Gain Flatness
Rolloff
dB
AC PARAMETERS: Distortion and Noise Tests
(The following conditions apply to all the following parameters, unless otherwise specified.)
AC: Vs = +5 Vdc, Av = +20, load resistance (Rl = 100 Ohms), feedback resistance (Rf) = 500 Ohms, and gain
setting resistance (Rg) = 26.1 Ohms.
-55 C < Ta < +125 C (Note 3).
HD2
HD3
2nd Harmonic
Distortion
1 Vpp at 10 MHz
2
-48
-65
dBc
dBc
9
9
3rd Harmonic
Distortion
1 Vpp at 10 MHz
2
DC PARAMETERS: DRIFT VALUES
(The following conditions apply to all the following parameters, unless otherwise specified.)
DC: "Deltas not required on B-Level product. Deltas required for S-Level product at Group B5 ONLY, or as
specified on the Internal Processing Instructions (IPI), (Note 3).
Iin
Vio
Is
Input Bias
Current
1
1
1
-0.2
-0.1
-1
+0.2
0.1
+1
uA
mV
mA
1
1
1
Input Offset
Voltage
Supply Current
5
MICROCIRCUIT DATA SHEET
MNLMH6624-X REV 1A0
Note 1: If not tested, shall be guaranteed to the limits specified in table I herein.
Note 2: Group A testing only.
Note 3: The algebraic convention, whereby the most negative value is a minimum and most
positive is a maximum, is used in this table. Negative current shall be defined as
convential current flow out of a device terminal.
6
MICROCIRCUIT DATA SHEET
MNLMH6624-X REV 1A0
Graphics and Diagrams
GRAPHICS#
DESCRIPTION
CERAMIC SOIC (WG), 10 LEAD (B/I CKT)
06402HRA2
07089HRA2
J08ARL
CERDIP (J), 8 LEAD (B/I CKT)
CERDIP (J), 8 LEAD (P/P DWG)
CERDIP (J), 8 LEAD (PIN OUT)
P000479A
P000483A
WG10ARC
CERAMIC SOIC (WG), 10 LEAD (PIN OUT)
CERAMIC SOIC (WG), 10 LEAD (P/P DWG)
See attached graphics following this page.
7
1
2
3
4
8
7
6
5
N/C
+V
N/C
V
INV
CC
V
V
OUT
NON-INV
-V
N/C
CC
LMH6624J
8 - LEAD DIP
CONNECTION DIAGRAM
TOP VIEW
P000479A
MIL/AEROSPACE OPERATIONS
2900 SEMICONDUCTOR DRIVE
SANTA CLARA, CA 95050
N/C
1
2
3
10
9
N/C
+V
V
INV
CC
8
V
V
OUT
NON-INV
4
5
7
6
-V
N/C
N/C
CC
N/C
LMH6624WG
10 - LEAD CERAMIC SOIC
CONNECTION DIAGRAM
TOP VIEW
P000483A
MIL/AEROSPACE OPERATIONS
2900 SEMICONDUCTOR DRIVE
SANTA CLARA, CA 95050
MICROCIRCUIT DATA SHEET
MNLMH6624-X REV 1A0
Revision History
Rev ECN # Rel Date Originator Changes
0A0
M0004195 08/20/03
Rose Malone
Initial MDS Release: MNLMH6624-X, Rev. 0A0
1A0
M0004262 08/20/03
Rose Malone
Update MDS: MNLMH6624-X, Rev. 0A0 to MNLMH6624-X, Rev.
1A0. Changed Subgroups in AC Electrical Section from 4
to 9 for parameters SSBW, GFP, GFR, HD2, HD3.
8
相关型号：
©2020 ICPDF网 联系我们和版权申明