5962-8777801XA [TI]
军用级超可靠功率晶体管 | NDT | 3 | -55 to 125;
| 型号： | 5962-8777801XA |
| 厂家： | 
TEXAS INSTRUMENTS |
| 描述： | 军用级超可靠功率晶体管 | NDT | 3 | -55 to 125 开关 晶体管 功率双极晶体管 |
| 文件： | 总18页 (文件大小：347K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
LM195QML
LM195QML Ultra Reliable Power Transistors
Literature Number: SNLS194
November 30, 2010
LM195QML
Ultra Reliable Power Transistors
device is used as an emitter follower with low source
impedance, it is necessary to insert a 5.0k resistor in series
with the base lead to prevent possible emitter follower oscil-
lations. Although the device is usually stable as an emitter
follower, the resistor eliminates the possibility of trouble with-
out degrading performance. Finally, since it has good high
frequency response, supply bypassing is recommended.
General Description
The LM195 is a fast, monolithic power integrated circuit with
complete overload protection. This device, which acts as a
high gain power transistor, has included on the chip, current
limiting, power limiting, and thermal overload protection mak-
ing it virtually impossible to destroy from any type of overload.
The inclusion of thermal limiting, a feature not easily available
in discrete designs, provides virtually absolute protection
against overload. Excessive power dissipation or inadequate
heat sinking causes the thermal limiting circuitry to turn off the
device preventing excessive heating.
Features
Internal thermal limiting
■
Greater than 1.0A output current
■
3.0 μA typical base current
500 ns switching time
■
■
■
■
■
■
The LM195 offers a significant increase in reliability as well
as simplifying power circuitry. In some applications, where
protection is unusually difficult, such as switching regulators,
lamp or solenoid drivers where normal power dissipation is
low, the LM195 is especially advantageous.
2.0V saturation
Base can be driven up to 40V without damage
Directly interfaces with CMOS or TTL
100% electrical burn-in
The LM195 is easy to use and only a few precautions need
be observed. Excessive collector to emitter voltage can de-
stroy the LM195 as with any power transistor. When the
Ordering Information
NS Part Number
SMD Part Number
NS Package Number
Package Description
3LD T0–5 Metal Can
LM195H/883
5962–8777801XA
H03B
Connection Diagram
TO-5 Metal Can Package
20156504
Bottom View
See NS Package Number H03B
© 2010 National Semiconductor Corporation
201565
www.national.com
Schematic Diagram
20156511
1.0 Amp Lamp Flasher
Simplified Circuit
20156516
20156501
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2
Absolute Maximum Ratings (Note 1)
Collector to Emitter Voltage
Collector to Base Voltage
Base to Emitter Voltage (Forward)
Base to Emitter Voltage (Reverse)
Collector Current
Power Dissipation (Note 2)
Operating Temperature Range
H-Pkg
42V
42V
42V
20V
Internally Limited
Internally Limited
−55°C ≤ TA ≤ +125°C
Storage Temperature Range
−65°C ≤ TA ≤ +150°C
Lead Temperature (Soldering, 10 sec.)
Thermal Resistance
260°C
ꢀꢀꢀθJA
H-Pkg; Still Air @ 0.5W
H-Pkg; 500LF/Min Air Flow @ 0.5W
ꢀꢀꢀθJC
192°C/W
66°C/W
H-Pkg @ 1.0W
29°C/W
Quality Conformance Inspection
Mil-Std-883, Method 5005 - Group A
Subgroup
Description
Static tests at
Temp (°C)
1
2
+25
+125
-55
Static tests at
3
Static tests at
4
Dynamic tests at
Dynamic tests at
Dynamic tests at
Functional tests at
Functional tests at
Functional tests at
Switching tests at
Switching tests at
Switching tests at
Settling time at
Settling time at
Settling time at
+25
+125
-55
5
6
7
+25
+125
-55
8A
8B
9
+25
+125
-55
10
11
12
13
14
+25
+125
-55
3
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LM195H/883 Electrical Characteristics
DC Parameter Collector to Emitter
Sub-
groups
Symbol
VCE
Parameter
Operating Voltage
Conditions
Notes
Min Max
Unit
(Note 3)
42
V
1, 2, 3
IC ≤ IMax
DC Parameter Base to Emitter
Sub-
groups
Symbol
BVBE
Parameter
Conditions
Notes
Min Max
Unit
Breakdown Voltage
(Note 3)
42
V
1, 2, 3
VCE ≤ 42V
VCE ≤ 7V
1.2
1
A
A
V
V
1
ISC
Collector Current
Saturation Voltage
2, 3
1, 2
3
2
VSat
IC = 1A
2.5
0 ≤ VBE ≤ 42V,
IC ≤ IMax
IB
Base Current
5
µA
1, 2, 3
IQ
VCE = 42V, VBE = 0V
Quiescent Current
5
mA
V
1, 2, 3
1
VC = 46-42V,
IL = 50mA
-0.03 0.01
VBk
Thr
Breakdown Delta VBE
Thermal Response
VC = 46-38V
VC = 50-42V
100µS
-0.03 0.01
-0.03 0.01
V
1
1
1
1
1
1
V
-10
-10
-10
-10
100
70
mV
mV
mV
mV
500µS
2mS
50
20mS
10
AC Parameter
Sub-
groups
Symbol
Parameter
Response Time
Response Time
Conditions
Notes
Min Max
Unit
µS
VI = 0-2V, RL = 36Ω,
tON
1.8
1.8
9, 10, 11
9, 10, 11
V+ = 36V
VI = 2-0V, RL = 36Ω,
tOFF
µS
V+ = 36V
Note 1: Absolute Maximum Ratings indicate limits beyond which damage to the device may occur. Operating Ratings indicate conditions for which the device is
functional, but do not guarantee specific performance limits. For guaranteed specifications and test conditions, see the Electrical Characteristics. The guaranteed
specifications apply only for the test conditions listed. Some performance characteristics may degrade when the device is not operated under the listed test
conditions.
Note 2: The maximum power dissipation must be derated at elevated temperatures and is dictated by TJmax (maximum junction temperature), θJA (package
junction to ambient thermal resistance), and TA (ambient temperature). The maximum allowable power dissipation at any temperature is PDmax = (TJmax - TA)/
θ
JA or the number given in the Absolute Maximum Ratings, whichever is lower.
Note 3: Parameter tested go−no−go only.
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4
Typical Performance Characteristics
Bias Current
Quiescent Current
20156535
20156536
Base Emitter Voltage
Base Current
20156538
20156537
Saturation Voltage
Response Time
20156539
20156540
5
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Response Time
10V Transfer Function
20156541
20156507
36V Transfer Function
Transconductance
20156508
20156509
Small Signal Frequency
Response
20156510
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6
Typical Applications
1.0 Amp Voltage Follower
20156512
*Solid Tantalum
Power PNP
Time Delay
20156513
*Protects against excessive base drive
**Needed for stability
20156514
7
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1.0 MHz Oscillator
20156515
1.0 Amp Negative Regulator
20156517
†Solid Tantalum
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8
1.0 Amp Positive Voltage Regulator
20156518
†Solid Tantalum
Fast Optically Isolated Switch
Optically Isolated Power Transistor
20156520
20156519
CMOS or TTL Lamp Interface
Two Terminal Current Limiter
20156522
20156521
9
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40V Switch
20156523
*Drive Voltage 0V to ≥ 10V ≤ 42V
6.0V Shunt Regulator with Crowbar
Two Terminal 100 mA Current Regulator
20156525
20156524
Low Level Power Switch
Power One-Shot
20156526
Turn ON = 350 mV
Turn OFF = 200 mV
20156527
T = R1C
R2 = 3R1
R2 ≤ 82k
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10
Emitter Follower
High Input Impedance AC Emitter Follower
20156528
*Need for Stability
20156529
Fast Follower
20156530
*Prevents storage with fast fall time square wave drive
Power Op Amp
20156531
*Adjust for 50 mA quiescent current
†Solid Tantalum
11
www.national.com
6.0 Amp Variable Output Switching Regulator
20156532
*Sixty turns wound on Arnold Type A-083081-2 core.
**Four devices in parallel
†Solid tantalum
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12
Revision History Section
Released
Revision
Section
Changes
11/30/2010
A
New Release, Corporate format
1 MDS data sheets converted into one Corp. data
sheet format. MNLM195-H Rev 0BL will be archived.
13
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Physical Dimensions inches (millimeters) unless otherwise noted
TO-5 Metal Can Package
NS Package Number H03B
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14
Notes
15
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Notes
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相关型号：
5962-8777801YA
42V, 3 CHANNEL, NPN AND PNP, Si, POWER TRANSISTOR, HERMETIC SEALED, SIMILAR TO TO-3, 2 PIN
ROCHESTER
5962-87782012A
HERMETIC SURFACE MOUNT FIXED VOLTAGE POSITIVE REGULATORS APPROVED TO DESC DRAWINGS
INFINEON
5962-87782012X
HERMETIC SURFACE MOUNT FIXED VOLTAGE POSITIVE REGULATORS APPROVED TO DESC DRAWINGS
ETC
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