ADS8413IBRGZT [TI]
具有 LVDS 串行接口的16 位单极差动输入 2MSPS 采样率 4.75V 至 5.25V ADC | RGZ | 48 | -40 to 85;
| 型号： | ADS8413IBRGZT |
| 厂家： | 
TEXAS INSTRUMENTS |
| 描述： | 具有 LVDS 串行接口的16 位单极差动输入 2MSPS 采样率 4.75V 至 5.25V ADC | RGZ | 48 | -40 to 85 转换器 |
| 文件： | 总39页 (文件大小：2173K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
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ADS8413
SLAS490–OCTOBER 2005
16-BIT, 2-MSPS, LVDS SERIAL INTERFACE,
SAR ANALOG-TO-DIGITAL CONVERTER
FEATURES
APPLICATIONS
•
•
•
•
Medical Instrumentation
•
•
•
•
•
•
•
2-MHz Sample Rate
HIgh-Speed Data Acquisiton Systems
High-Speed Close-Loop Systems
Communication
16-Bit Resolution
SNR 92 dB at 10 kHz I/P
THD –107 dB at 10 kHz I/P
±1 LSB Typ, ±2 LSB INL Max
+0.7/–0.5 LSB Typ, +1.5/–1 LSB DNL Max
DESCRIPTION
The ADS8413 is a 16-bit, 2-MSPS, analog-to-digital
(A/D) converter with 4-V internal reference. The
device includes a capacitor based SAR A/D converter
with inherent sample and hold.
Unipolar Differential Input Range: –4 V
to 4 V
•
•
•
•
•
•
•
•
•
•
Internal Reference
Internal Reference Buffer
The ADS8413 also includes a 200-Mbps, LVDS,
serial interface. This interface is designed to support
daisy chaining or cascading of multiple devices. A
selectable 16-/8-bit data frame mode enables the use
of a single shift register chip (SN65LVDS152) for
converting the data to parallel format.
200-Mbps LVDS Serial Interface
Optional 200-MHz Internal Interface Clock
16-/8-Bit Data Frame
Zero Latency at Full Speed
Power Dissipation: 290 mW at 2 MSPS
Nap Mode (125 mW Power Dissipation)
Power Down (5 µW)
The ADS8413 unipolar differential input range
supports a differential input swing of –Vref to +Vref with
a common-mode voltage of +Vref/2.
The nap feature provides substantial power saving
when used at lower conversion rates.
48-Pin QFN Package
The ADS8413 is available in a 48-pin QFN package.
High-Speed SAR Converter Family
Type/Speed
18-Bit Pseudo-Diff
500 kHz
~ 600 kHz
ADS8381
750 kHZ
1 MHz
1.25 MHz
2 MHz
3 MHz
4 MHz
ADS8383
ADS8380 (S)
ADS8382 (S)
18-Bit Pseudo-Bipolar, Fully Diff
16-Bit Pseudo-Diff
ADS8411
ADS8370 (S) ADS8371
ADS8372 (S)
ADS8401/05
ADS8410
(S-LVDS)
ADS8412
16-Bit Pseudo-Bipolar, Fully Diff
ADS8402/06
ADS7890 (S)
ADS8413
(S-LVDS)
14-Bit Pseudo-Diff
12-Bit Pseudo-Diff
ADS7891
ADS7881
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of Texas
Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.
PRODUCTION DATA information is current as of publication date.
Copyright © 2005, Texas Instruments Incorporated
Products conform to specifications per the terms of the Texas
Instruments standard warranty. Production processing does not
necessarily include testing of all parameters.
ADS8413
www.ti.com
SLAS490–OCTOBER 2005
+ VBD
BDGND
+ VA
AGND
Core Supply
SAR
I/O Supply
CSTART
SYNC_O, CLK_O, SDO
LVDS I/O
SYNC_I, CLK_I, SDI
+
−
+ IN
− IN
CDAC
CONVST
BUS BUSY
RD
Comparator
Clock
CMOS I/O
REFIN
BUSY
CS
Conversion
and
Control Logic
LAT_Y/N
BYTE,
MODE_C/D,
CLK_I/E, PD, NAP
Mode
Selection
4 V Internal
Reference
REFOUT
ORDERING INFORMATION(1)
MAXIMUM
INTEGRAL
LINEARITY
(LSB)
MAXIMUM
NO MISSING
TRANSPORT
MEDIA
QUANTITY
DIFFERENTIAL
LINEARITY
(LSB)
CODES AT
RESOLUTION
(BIT)
PACKAGE
TYPE
PACKAGE
DESIGNATOR
TEMPERATURE
ORDERING
INFORMATION
MODEL
RANGE
ADS8413IBRGZT
ADS8413IBRGZR
ADS8413IRGZT
ADS8413IRGZR
250
2000
250
48 pin
QFN
–40°C
to 85°C
ADS8413lB
ADS8413l
±2
±4
1.5/–1
3/–1
16
16
RGZ
RGZ
48 pin
QFN
–40°C
to 85°C
2000
(1) For the most current package and ordering information, see the Package Option Addendum at the end of this document, or see the TI
website at www.ti.com.
ABSOLUTE MAXIMUM RATINGS
over operating free-air temperature range (unless otherwise noted)(1)
UNIT
+IN to AGND
–0.3 V to +VA + 0.3 V
–0.3 V to +VA + 0.3 V
–0.3 to 7 V
-IN to AGND
+VA to AGND
+VBD to BDGND
–0.3 to 7 V
Digital input voltage to GND
Digital output to GND
Operating temperature range
Storage temperature range
Junction temperature (TJmax)
–0.3 V to (+VBD + 0.3 V)
–0.3 V to (+VBD + 0.3 V)
–40°C to 85°C
–65°C to 150°C
150°C
Power dissipation
(TJ Max – TA)/ θJA
86°C/W
QFN package
θJA Thermal impedance
Vapor phase (60 sec)
Infrared (15 sec)
215°C
Lead temperature, soldering
220°C
(1) Stresses beyond those listed under absolute maximum ratings may cause permanent damage to the device. These are stress ratings
only, and functional operation of the device at these or any other conditions beyond those indicated under recommended operating
conditions is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
2
ADS8413
www.ti.com
SLAS490–OCTOBER 2005
SPECIFICATIONS
TA = –40°C to 85°C, +VA = 5 V,+VBD = 5 V or 3.3 V, Vref = 4.096 V, f sample = 2 MHz (unless otherwise noted)
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
ANALOG INPUT
(1)
Full-scale input voltage span
+IN – (–IN)
–Vref
–0.2
Vref
Vref + 0.2
Vref + 0.2
Vref/2+0.2
V
V
+IN
–IN
Absolute input voltage range
–0.2
Input common-mode voltage range
Input capacitance
Vref/2–0.2
Vref/2
25
V
Ci
pF
pA
Input leakage current
500
SYSTEM PERFORMANCE
Resolution
16
Bits
Bits
ADS8413IB
ADS8413I
ADS8413IB
ADS8413I
ADS8413IB
ADS8413I
ADS8413IB
ADS8413I
ADS8413IB
ADS8413I
16
16
No missing codes
–2
±1
±2
2
4.0
1.5
3
INL
DNL
EO
Integral linearity(2)
Differential linearity
Offset error
LSB(3)
LSB(3)
mV
–4.0
–1 0.7/–0.5
–1.0 1.5/–0.8
–1
–3.0
±0.2
±1
1
External reference
External reference
3.0
0.1
0.15
–0.1
±0.03
±0.1
EG
Gain error(4)
% of FS
–0.15
With common mode input signal = 200
mVp-p at 1 MHz
CMMR
PSRR
Common-mode rejection ratio
Power supply rejection ratio
60
80
dB
dB
At FFF0H output code
SAMPLING DYNAMICS
+VBD = 5 V
+VBD = 3 V
+VBD = 5 V
+VBD = 3 V
360
391
391
Conversion time
ns
ns
100
100
Acquisition time
Maximum throughput rate with or without latency
Aperture delay
2.0
MHz
ns
20
10
50
50
Aperture jitter
psec
ns
Step response
Overvoltage recovery
ns
DYNAMIC CHARACTERISTICS
VIN 0.5 dB below FS at 10 kHz
VIN 0.5 dB below FS at 100 kHz
VIN 0.5 dB below FS at 0.5 MHz
VIN 0.5 dB below FS at 10 kHz
VIN 0.5 dB below FS at 100 kHz
VIN 0.5 dB below FS at 0.5 MHz
VIN 0.5 dB below FS at 10 kHz
VIN 0.5 dB below FS at 100 kHz
VIN 0.5 dB below FS at 0.5 MHz
VIN 0.5 dB below FS at 10 kHz
VIN 0.5 dB below FS at 100 kHz
VIN 0.5 dB below FS at 0.5 MHz
–107
–95
–90
92
THD
Total harmonic distortion(5)
Signal-to-noise ratio
dB
dB
dB
SNR
90
89
92
SINAD
SFDR
Signal-to-noise and distortion
86
84
–113
–98
–93
37.5
Spurious free dynamic range
–3 dB Small signal bandwidth
dB
MHz
(1) Ideal input span; does not include gain or offset error.
(2) This is endpoint INL, not best fit.
(3) Least significant bit
(4) Measured relative to actual measured reference.
(5) Calculated on the first nine harmonics of the input frequency.
3
ADS8413
www.ti.com
SLAS490–OCTOBER 2005
SPECIFICATIONS (continued)
TA = –40°C to 85°C, +VA = 5 V,+VBD = 5 V or 3.3 V, Vref = 4.096 V, f sample = 2 MHz (unless otherwise noted)
PARAMETER
EXTERNAL REFERENCE INPUT
TEST CONDITIONS
MIN
TYP
MAX
UNIT
Input voltage range, VREF
Resistance(6)
3.9
4.096
500
4.2
V
To internal reference voltage
kΩ
INTERNAL REFERENCE OUTPUT
From 95% (+VA), with 1-µF storage
capacitor on REFOUT to AGND
25
Start-up time
ms
Reference voltage range, Vref
At room temperature
Static load
4.080
4.096
4.112
10
V
µA
Source current
Line regulation
+VA = 4.75 V to 5.25 V
IOUT = 0 V
0.6
36
mV
Drift
PPM/°C
POWER SUPPLY REQUIREMENTS
+VBD
+VA
2.7
3.3
5
5.25
5.25
64
Power supply voltage
V
4.75
Supply current, 2-MHz sample rate +VA
Power dissipation, 2-MHz sample rate
58
mA
+VA = 5 V
290
320
mW
NAP MODE
Supply current
POWER DOWN
Supply current
+VA
25
mA
+VA
1
2.5
µA
µs
Powerdown time
Powerup time
10
With 1-µF storage capacitor on
REFOUT to AGND
25
3
ms
Invalid conversions after power up or reset
TEMPERATURE RANGE
Operating free air
LOGIC FAMILY CMOS
Numbers
–40
85
°C
VIH
VIL
High-level input voltage
Low-level input voltage
High-level output voltage
Low-level output voltage
IIH = 5 µA
+VBD –1
–0.3
+VBD +0.3
0.8
V
V
V
V
IIL = 5 µA
VOH
VOL
IOH = 2 TTL loads
IOL = 2 TTL loads
+VBD – 0.6
0
+VBD
0.4
LOGIC FAMILY LVDS(7)
DRIVER
Steady-state differential output voltage
magnitude
|VOD(SS)
∆|VOD(SS)
VOC(SS)
|
247
-50
340
1.2
50
454
50
RL = 100 Ω, See Figure 52, Figure 53
mV
V
Change in steady-state differential output voltage
magnitude between logic states
|
Steady-state common-mode output voltage
1.125
–50
1.375
50
Change in steady-state common-mode output
voltage between logic states
∆|VOC(SS)
|
See Figure 54
mV
Peak to peak change in common-mode output
voltage
VOC(pp)
150
VOY or VOZ = 0 V
VOD = 0 V
3
3
10
10
5
IOS
IOZ
Short circuit output current
mA
High impedance output current
VO = 0 V or +VBD
–5
µA
(6) Can vary ±20%
(7) All min max values ensured by design.
4
ADS8413
www.ti.com
SLAS490–OCTOBER 2005
SPECIFICATIONS (continued)
TA = –40°C to 85°C, +VA = 5 V,+VBD = 5 V or 3.3 V, Vref = 4.096 V, f sample = 2 MHz (unless otherwise noted)
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
50
UNIT
RECEIVER
VITH+
VITH-
Positive going differential voltage threshold
Negative going differential voltage threshold
Common mode input voltage
mV
–50
0.2
VIC
1.2
5
2.2
V
CI
Input capacitance
pF
TIMING REQUIREMENTS
TA = –40°C to 85°C, +VA = 5 V, +VBD = 5 V or 3.3 V (unless otherwise noted)
PARAMETER
MIN
TYP
MAX UNIT
REF
SAMPLING AND CONVERSION RELATED
Figure 1,
Figure 2
tacq Acquisition time
tcnv Conversion time
100
ns
Figure 1,
Figure 2
391
ns
ns
ns
ns
ns
tw1
tw2
td1
td2
Pulse duration, CONVST high
100
40
Figure 1
Figure 1,
Figure 2
Pulse duration, CONVST low
Delay time, CONVST rising edge to sample start
Delay time, CONVST falling edge to conversion start
5
5
Figure 1
Figure 1,
Figure 2
+VBD = 3.3 V
+VBD = 5 V
+VBD = 3.3 V
+VBD = 5 V
14
13
8
Figure 1,
Figure 2
td3
Delay time, CONVST falling edge to busy high
ns
Figure 1,
Figure 2
td4
Delay time, conversion end to busy low
Pulse duration, CSTART high
ns
ns
7
Figure 1,
Table 2
tw3
100
45
Figure 1,
Figure 2,
Table 2
tw4
td5
td6
Pulse duration, CSTART low
ns
ns
ns
Figure 1,
Table 2
Delay time, CSTART rising edge to sample start
Delay time, CSTART falling edge to conversion start
7.5
7.5
Figure 1,
Figure 2,
Table 2
+VBD = 3.3 V
+VBD = 5 V
16.5
15.5
Figure 1,
Figure 2,
Table 2
td7
Delay time, CSTART falling edge to busy high
ns
I/O RELATED
td8 Delay time, RD falling edge while CS low to BUS_BUSY high
16
29
28
ns
ns
Figure 5
Figure 5
+VBD = 3.3 V
+VBD = 5 V
Delay time, RD falling edge while CS low to SYNC_O and SDO out of
3-state condition (for device with LAT_Y/N pulled low)
td9
Delay time, pre_conversion end (point A) to SYNC_O and SDO out of 3-state
condition
td10
22
ns
Figure 6
VBD = 3.3 V
+VBD = 5 V
8
7
td11 Delay time, pre_conversion end (point A) to BUS_BUSY high
td12 Delay time, conversion phase end to SYNC_O high
td13 Delay time, RD falling edge while CS low to SYNC_O high
ns
ns
ns
ns
ns
Figure 6
Figure 6
Figure 5
Figure 11
6
9 + tCLK
8.5 + 5*tCLK
8 + 5*tCLK
+VBD = 3.3 V 5.5 + 4*tCLK
+VBD = 5 V
5 + 4*tCLK
5
tw5
Pulse duration, RD low for device in no latency mode
+VBD = 3.3 V
+VBD = 5 V
+VBD = 3.3 V
+VBD = 5 V
1.4
1.3
Figure 5,
Figure 6
td14 Delay time, CLK_O rising edge to data valid
4*tCLK– 6.5
4*tCLK– 6
4*tCLK– 3
4*tCLK– 2.5
Delay time, BUS_BUSY low to SYNC_O high in daisy chain mode
indicating receiving device to output the data
Figure 7,
Figure 12
td15
ns
5
ADS8413
www.ti.com
SLAS490–OCTOBER 2005
TIMING REQUIREMENTS (continued)
TA = –40°C to 85°C, +VA = 5 V, +VBD = 5 V or 3.3 V (unless otherwise noted)
PARAMETER
MIN
TYP
MAX UNIT
REF
Figure 7,
Figure 8,
Figure 12,
Figure 15
td16 Delay time, CLK_O to SDO and SYNC_O 3-state
4
ns
tpd1 Propagation delay time, SYNC_I to SYNC_O in daisy chain mode
11 + 0.5*tCLK
ns
ns
Figure 12
Figure 8
td17 Delay time, SYNC_O and SDO 3-state to BUS_BUSY low in cascade mode.
0
2
8
+VBD = 3.3 V
Delay time, RD rising edge to BUS_BUSY high for device with
LAT_Y/N = 1
Figure 11,
Figure 14
td18
ns
ns
+VBD = 5 V
7
+VBD = 3.3 V
40.5
40
Delay time, point A indicating clear for bus 3-state release to BUSY
falling edge
td19
Figure 6
+VBD = 5 V
tr
tf
Rise time, differential LVDS output signal
Fall time, differential LVDS output signal
CLK frequency (serial data rate)
950
950
210
ps
ps
Figure 53
Figure 53
190
MHz
Figure 22,
Figure 23
td20 Delay time, from PD falling edge to SDO 3-state
td21 Delay time, from PD falling edge to device powerdown
td22 Delay time, from PD rising edge to device powerup
10
10
25
ns
µs
Figure 22,
Figure 23
Figure 22,
Figure 23
ms
ts1
Settling time, internal reference after first three conversions
4
335
406
ms
ns
ns
Figure 22
Figure 9
Figure 9
td23 Delay time, CONVST falling edge to start of restricted zone for start of data read cycle
td24 Delay time, CONVST falling edge to end of restricted zone for start of data read cycle
6
ADS8413
www.ti.com
SLAS490–OCTOBER 2005
DEVICE INFORMATION
RGZ PACKAGE
(TOPVIEW)
12 11 10
9
8
7
6
5
4
3
2
1
13
14
15
48
47
46
REFIN
BUS_BUSY
RD
REFOUT
NC
BUSY
16
17
18
19
20
21
22
BDGND
+VBD
+VA
45
44
AGND
+IN
43 SYNC_O +
42
41
40
SYNC_O −
SDO +
−IN
AGND
SDO −
+VA
+VA
39 CLK_O +
CLK_O −
+VA
38
37
23
24
AGND
AGND
25 26 27 28 29 30 31 32 33 34 35 36
NC − No internal connection
TERMINAL FUNCTIONS
TERMINAL
I/O
DESCRIPTION
NO.
NAME
ANALOG PINS
Reference ground. Connect to analog ground plane.
11, 12 REFM
I
I
Reference (positive) input. Decouple with REFM pin using 0.1-µF bypass capacitor and 1-µF storage
capacitor.
13
REFIN
Internal reference output. Short to REFIN pin when internal reference is used. Do not connect to
REFIN pin when external reference is used. Always decouple with AGND using 0.1-µF bypass
capacitor.
14
REFOUT
O
18
19
+IN
–IN
I
I
Noninverting analog input channel
Inverting analog input channel
LVDS I/O PINS(1)
Device sample and convert control input. Device enters sample phase with rising edge of CSTART
and conversion phase starts with falling edge of CSTART (provided other conditions are satisfied).
Set CSTART = 0 when CONVST input is used.
28,
29
CSTART+
CSTART–
I
(1) All LVDS inputs and outputs are differential with signal+ and signal– lines. Whenever only the 'signal' is mentioned it refers to the
signal+ line and signal– line is the compliment. For example CLK_O refers to CLK_O+.
7
ADS8413
www.ti.com
SLAS490–OCTOBER 2005
DEVICE INFORMATION (continued)
TERMINAL FUNCTIONS (continued)
TERMINAL
NAME
I/O
DESCRIPTION
NO.
I
SYNC_I +
SYNC_I–
Connect to previous device SYNC_O with same polarity, while device is selected to operate in daisy
chain mode.
Dasiy
Chain
30,
31
Mode 1 (valid in cascade mode only). CLK_O available while M1=1 (LVDS) or M1+ is pulled up to
+VBD and M1– is grounded (AGND). CLK_O o/p goes to 3-state when M1 = 0 (LVDS) or M1+ is
grounded (AGND) and M1– is pulled up to +VBD. Do not allow these pins to float.
M1+
M1–
I
Cascade
I
SDI+
SDI–
Serial data input. Connect to previous device SDO with same polarity, while device is selected to
operate in daisy chain mode.
Daisy
Chain
32,
33
Mode 2 (valid in cascade mode only). Doubles LVDS o/p current while M2 = 1 (LVDS) or M2+ is
pulled up to +VBD and M2– is grounded (AGND). LVDS o/p current is normal (3.4 mA typ) when M2
Cascade = 0 (LVDS) or M2+ is grounded (AGND) and M2 – is pulled up to +VBD. Do not allow these pins to
float.
M2+
M2–
I
34,
35
CLK_I+
CLK_I–
I
Serial external clock input. Set CLK_I/E (pin 7) = 0 to select external clock source.
38,
39
CLK_O–
CLK_O+
Serial clock out. Data is latched out on the rising edge of CLK_O and can be captured on the next
falling edge.
O
O
O
40,
41
SDO–
SDO+
Serial data out. Data is latched out on the rising edge of CLK_O with MSB first format.
42,
43
SYNC_O –
SYNC_O +
(2)
Synchronizes the data frame.
CMOS I/O PINS
1
2
CS
I
I
Chip select, active low signal. All of the LVDS o/p except CLK_O are 3-state if this pin is high.
CMOS equivalent of CSTART input. So functionality is the same as the CSTART input. Set CONVST
= 0 when the CSTART input is used.
CONVST
Controls the data frame(2) duration. The frame duration is 16 CLKs if BYTE = 0 or 8 CLKs if BYTE =
1.
3
4
5
6
BYTE
PD
I
I
I
I
Active low input, acts as device power down.
Selects nap mode while high. Device enters nap state at conversion end and remains so until next
acquisition phase begins.
NAP
MODE_C/D
Selects cascade (MODE_C/D = 1) or daisy chain mode (MODE_C/D = 0).
Selects the source of the I/O clock.
7
CLK_I/E
I
CLK_I/E = 1 selects internally generated clock with 200-MHz typ frequency.
CLK_I/E = 0 selects CLK_I as the I/O clock.
Controls the data read with latency (LAT_Y/N = 1) or without latency ((LAT_Y/N = 0). It is essential to
set LAT_Y/N = 0 for the first device in daisy chain or cascade.
8
LAT_Y/N
BUSY
RD
I
O
I
46
47
Active high signal, indicates a conversion is in progress.
Data read request to the device, also acts as a hand shake signal for daisy chain and cascade
operation.
Status output. Indicates that the bus is being used by the device. Connect to RD of the next device
for daisy chain or cascade operation.
48
BUS_BUSY
O
POWER SUPPLY PINS
10, 16,
21, 22, +VA
26, 37
–
–
Analog power supply and LVDS input buffer power supply.
9, 17, 20,
23, 24,
AGND
Analog ground pins. Short to the analog ground plane below the device.
25, 27,
36
44
45
+VBD
–
–
Digital power supply for all CMOS digital inputs and CMOS, LVDS outputs.
BDGND
Digital ground for all digital inputs and outputs. Short to the analog ground plane below the device.
(2) The duration from the first rising edge of SYNC_O to the second rising edge of SYNC_O is one data frame. The data frame duration is
16 CLKs if BYTE = 0 or 8 CLKs if BYTE = 1.
8
ADS8413
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SLAS490–OCTOBER 2005
DEVICE INFORMATION (continued)
TERMINAL FUNCTIONS (continued)
TERMINAL
NAME
I/O
DESCRIPTION
NO.
NOT CONNECTED PINS
No connection pins
15
NC
–
Table 1. Device Configuration for Various Modes of Operation
DEVICE PINS AND RECOMMENDED LOGIC LEVELS
COMMENTS
REFERENCE FIGURES
FOR
OPERATION MODE
SAMPLING
AND
FOR DATA
READ
MODE_C/D
CLK_I/E
LAT_Y/N
M1+
M1–
M2+
M2–
CONVERSION
+VBD
AGND
AGND
+VBD
See Figures 3,4
and 5,6,8 for
more details
1
0
0
1 or 0
0
Recommended configuration
Set SYNC_I and SDI to logic 0
or + terminal to AGND and –ve 1 or 2
terminal to +VBD
1 or 2
or M1 = 1 LVDS
or M2 = 0 LVDS
Single device
See Figures 3,4
and 5,6,7 for
more details
1 or 0
1 or 0
0
0
See comments
See comments
Set SYNC_I and SDI to logic 0
or + terminal to AGND and –ve 1 or 2
terminal to +VBD
Multiple
devices
in daisy
chain
1st Device
See comments
See comments
See comments
See comments
See Figures
3,4,11 and 6,12
for more details
2nd To last
device
Maximum 4 devices supported
1 or 2
0
1
0
0
1
0
at 2 MSPS with 200-MHz CLK
+VBD
AGND
AGND
or M2 = 0 LVDS(1)
AGND +VBD
or M2 = 0 LVDS(1)
+VBD
1st Device
Multiple
devices
in
See Figures
3,4,14 and 6,15
for more details
or M1 = 1 LVDS
Maximum 3 devices supported
at 2 MSPS
1 or 2
+VBD
AGND
2nd To last
device
cascade
1
0
1
or M1 = 0 LVDS
(1) Specified polarity is suitable for a 100-Ω differential load across the LVDS outputs. However, polarity can be reversed to double the
output current in order to support two 100-Ω loads on both ends of the transmission lines, resulting in 50-Ω net load.
DETAILED DESCRIPTION
SAMPLE AND CONVERT
The sampling and conversion process is controlled by the CSTART (LVDS) or CONVST (CMOS) signal. Both
signals are functionally identical. The following diagrams show control with CONVST. The rising edge of
CONVST (or CSTART) starts the sample phase, if the conversion has completed and the device is in the wait
state. Figure 2 shows the case when the device is in the conversion phase at the rising edge of CONVST. In this
case, the sample phase starts immediately at the end of the conversion phase and there is no wait state.
CONVST
t
w1
t
w2
t
d2
t
d4
t
d1
BUSY
t
d3
Wait
Sample Phase
Conversion Phase
Wait
t
t
cnv
acq
Figure 1. Sample and Convert With Wait (Less Than 2 MSPS Throughput)
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DETAILED DESCRIPTION (continued)
t
w2
Not less than t to
CONVST
d1
avoid device entering
wait state
t
d4
t
d2
BUSY
t
d3
Sample Phase
Conversion Phase
Sample Phase
t
t
cnv
acq
Figure 2. Sample and Convert With No Wait or Back to Back (2 MSPS Throughput)
The device ends the sample phase and enters the conversion phase on the falling edge of CONVST (CSTART).
A high level on the BUSY output indicates an ongoing conversion. The device conversion time is fixed. The
falling edge of CONVST (CSTART) during the conversion phase aborts the ongoing conversion. A data read
after a conversion abort fetches invalid data. Valid data is only available after a sample phase and a conversion
phase has completed. The timing diagram for control with CSTART is similar to Figure 1 and Figure 2. Table 2
shows the equivalent timing for control with CONVST and CSTART.
Table 2. CONVST and CSTART Timing Control
TIMING CONTROL WITH CONVST
TIMING CONTROL WITH CSTART
tw1
tw2
td1
td2
td3
tw3
tw4
td5
td6
td7
DATA READ OPERATION
The ADS8413 supports a 200-MHz serial LVDS interface for data read operation. The three signal LVDS
interface (SDO, CLK_O, and SYNC_O) is well suited for high-speed data transfers. An application with a single
device or multiple devices can be implemented with a daisy chain or cascade configuration. The following
sections discuss data read timing when a single device is used.
DATA READ FOR A SINGLE DEVICE (See Table 1 for Device Configuration)
For a single device, there are two possible read cycle starts: a data read cycle start during a wait or sample
phase or a data read cycle start at the end of a conversion phase. Read cycle end conditions can change
depending on MODE C/D selection. Figure 3 explains the data read cycle. The details of a read frame start with
the two previous listed conditions and a read cycle end with MODE C/D selection are explained in Figure 5 and
Figure 6 and Figure 7 and Figure 8, respectively.
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See Figures 5 and 6
See Figures 7 and 8
RD
SYNC_O
CLK_O
1F 1R
18F
18R
2R
SDO
D0
D15
D14
BUS BUSY
Figure 3. Data Read With CS Low and BYTE = 0
As shown in Figure 3, a new data read cycle is initiated with the falling edge of RD, if CS is low and the device is
in a wait or sample phase. The device releases the LVDS o/p (SYNC_O, SDO) from 3-state and sets
BUS_BUSY high at the start of the read cycle. The SYNC_O cycle is 16 clocks wide (rising edge to rising edge)
if BYTE i/p is held low and can be used to synchronize a data frame. The clock count begins with the first CLK_O
falling edge after a SYNC_O rising edge. The MSB is latched out on the second rising edge (2R) and each
subsequent data bit is latched out on the rising edge of the clock. The receiver can shift data bits on the falling
edges of the clock. The next rising edge of SYNC_O coincides with the 16th rising edge of the clock. D0 is
latched out on the 17th rising edge of the clock. The receiver can latch the de-serialized 16-bit word on the 18th
rising edge (18R, or the second rising edge after a SYNC_O rising edge).
CS high during a data read 3-states SYNC_O and SDO. These signals remain in 3-state until the start of the
next data read cycle.
DATA READ IN BYTE MODE
Byte mode is selected by setting BYTE = 1, this mode is allowed for any condition listed in Table 1. Figure 4
shows a data read operation in byte mode.
RD
SYNC_O
CLK_O
1F 1R
18F
18R
9F 9R
2R
10R
SDO
D15
D14
D0
D7
D8
BUS BUSY
Figure 4. Data Read Timing Diagram with CS Low and BYTE = 1
Similar to Figure 3, a new data read cycle is initiated with the falling edge of RD, if CS is low and device is in a
wait or sample phase. The device releases the LVDS o/p (SYNC_O, SDO) from 3-state and sets BUS_BUSY
high at the start of the read cycle. The SYNC_O cycle is 8 clocks wide (rising edge to rising edge) if BYTE i/p is
held high and can be used to synchronize a data frame. The clock count begins with the first CLK_O falling edge
after a SYNC_O rising edge. The MSB is latched out on the second rising edge (2R) and each subsequent data
bit is latched out on the rising edge of the clock. The receiver can shift data bits on the falling edges of clock. The
next rising edge of SYNC_O coincides with the 8th rising edge of the clock. D8 is latched out on the 9th rising
edge of the clock. The receiver can latch the de-serialized higher byte on the 10th rising edge (10R, or second
rising edge after a SYNC_O rising edge). The de-serialized lower byte can be latched on the 18th rising edge
(18R).
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CS high during a data read 3-states SYNC_O and SDO. These signals remain in 3-state until the start of the
next data read cycle.
DATA READ CYCLE START DURING WAIT OR SAMPLE PHASE
As shown in Figure 5, the falling edge of RD , with CS low and the device is in a wait or sample phase, triggers
the start of a read cycle. The cycle starts when BUS_BUSY goes high and SYNC_O, SDO are released from
3-state. SYNC_O is low at the start and rises to a high level td13 ns after the falling edge of RD. As shown in
Figure 5, the MSB is shifted on the 2nd rising edge of the clock (2R). Other details about the data read cycle are
discussed in the previous section (see Figure 3).
t
d9
RD
t
d13
t
d8
BUSY
BUS_BUSY
1R
2R
3R
0R
1F
CLK_O
SYNC_O
t
d14
SDO_O
MSB
MSB − 1
Figure 5. Start of Data Read Cycle with RD with CS Low and Device in Wait or Sample Phase
DATA READ CYCLE START AT END OF CONVERSION PHASE (Read Without Latency, Back-to-Back)
This mode is optimized for a data read immediately after the end of a conversion phase and ensures the data
read is complete before the sample end while running at 2 MSPS. Point A in Figure 6 indicates
'pre_conversion_end'; it occurs td19 ns before the falling edge of BUSY or [(td2 + tcnv + td4) – td19] ns after the
falling edge of CONVST. A read cycle is initiated at point A if RD is issued before point A while CS is low.
Alternately, RD and CS can be held low. At the start of the read cycle, BUS_BUSY rises to a high level and the
LVDS outputs are released from 3-state. The rising edge of SYNC_O occurs td12 ns after the conversion end. As
shown in Figure 6, the MSB is shifted on the 2nd rising edge of the clock (2R). Other details about the data read
cycle are discussed in the previous section (see Figure 3).
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Conversion Phase
RD_REQ (Int)
Conversion End
A
t
d19
t
d11
t
d4
BUSY
t
d10
BUS_BUSY O/P
1R
2R
3R
0R
1F
CLK_O
t
d12
SYNC_O
t
d14
SDO_O
MSB
MSB − 1
Figure 6. Start of Data Read Cycle with End of Conversion
DATA READ CYCLE END (With MODE C/D = 0)
A data read cycle ends after all 16 bits have been serially latched out. Figure 7 shows the timing of the falling
edge of BUS_BUSY and the rising edge of SYNC_O with respect to SDO. SYNC_O rises on the 16th rising edge
of CLK_O. As shown in Figure 5 and Figure 6, the MSB is shifted out on the 2nd rising edge of CLK_O.
Therefore, the LSB-1 is shifted out on the 16th rising edge of CLK_O.
CONVST
CS = 0
BUS_BUSY
t
d15
SYNC_O
16R
17R
18R
15R
CLK_O
SDO
t
d16
LSB − 1
LSB
Figure 7. Data Read Cycle End with MODE C/D = 0
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The next two rising edges of CLK_O are shown as 17R and 18R in Figure 7. On 17R the LSB is latched out, and
on 18R SDO and SYNC-O go to 3-state. Note that BUS_BUSY falls td15 ns before the rising edge of SYNC_O
when MODE C/D = 0. Care must be taken not to allow LVDS bus usage by any other device until the end of the
read cycle or (td15 + 2/fclk + td16) ns after the falling edge of BUS_BUSY.
DATA READ CYCLE END (With MODE C/D = 1)
A data read cycle ends after all 16 bits have been serially latched out. Figure 8 shows the timing of the falling
edge of BUS_BUSY and the rising edge of SYNCO with respect to SDO. SYNC_O rises on the 16th rising edge
of CLK_O. As shown in Figure 5 and Figure 6, the MSB is shifted out on the 2nd rising edge of CLK_O.
Therefore, the LSB-1 is shifted out on the 16th rising edge of CLK_O.
CONVST
CS = 0
BUS_BUSY
t
d17
SYNC_O
16R
17R
18R
15R
CLK_O
SDO
t
d16
LSB − 1
LSB
Figure 8. Data Read Cycle End with MODE C/D = 1
The next two rising edges of CLK_O are shown as 17R and 18R in Figure 8. On 17R the LSB is latched out and
on 18R the SDO and SYNC_O go in 3-state. In cascade mode (with MODE C/D = 1) unlike daisy chain mode
BUS_BUSY falling edge occurs after LVDS outputs are 3-state. One can use BUS_BUSY falling edge to allow
the LVDS bus usage by any other device.
RESTRICTIONS ON READ CYCLE START
CONVST
t
d23
t
d24
BUSY
Read cycle not allowed
to start in this region
Figure 9. Read Cycle Restriction Region
The start of a data read cycle is not allowed in the region bound by td23 and td24. Previous conversion results are
available for a data read cycle start before this region, and current conversion results are available for a read
cycle start after this region.
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MULTIPLE DEVICES IN DAISY CHAIN OR CASCADE
Multiple devices can be connected in either a daisy chain or cascade configuration. The following sections
describes detailed timing diagrams and electrical connections. The ADS8413 provides all of the hand-shake
signals required for both of these modes. CONVST or CSTART is the only external signal needed for operation.
DAISY CHAIN
Figure 10 shows the first two devices in daisy chain. The signals shown by double lines are LVDS and the others
are CMOS. Daisy chain mode is selected by setting MODE_C/D = 0. The first device in the chain is identified by
selecting LAT_Y/N = 0.
Device 1
Device 2
SD0
SD0
See Table 1
External Clock
SDI
SDI
CLK_0
CLK_0
(Optional)
CLK_I
CLK_I
To Next Device
or Receiver
SYNC_0
SYNC_0
SYNC_I
SYNC_I
See Table 1
Last_Device
BUS_BUSY
BUS_BUSY
BUS_BUSY
RD
RD
+V
+V
CLK_I/E
LAT_Y/N
CLK_I/E
MODE_C/D
LAT_Y/N
CS
MODE_C/D
CS
From Controller
Figure 10. Connecting Multiple Devices in Daisy Chain
For all of the other devices in the chain LAT_Y/N = 1. See Table 1 for more details on device configurations.
SDO, CLK_O, and SYNC_O of device n are to be connected to SDI, CLK_I, and SYNC_I of the n+1 device.
SDO, CLK_O, and SYNC_O of the last device in the chain go to the receiver. BUS_BUSY of device n is
connected to RD of device n+1 and so on. Finally, BUS_BUSY of the last device in the chain is connected to RD
of device 1. This ensures the necessary handshake to seamlessly propagate the data of all devices through the
chain (it is also allowed to tie RD = 0 for device 1).
TIMING DIAGRAMS FOR DAISY CHAIN OPERATION
The conversion speed for n devices in the chain must be selected such that:
1/conversion speed > read startup delay + n*(data frame duration) + td16
Read startup delay = 10 ns + (td19 - td4) + td12 + 2/fCLK
Data frame duration = 16/fCLK
Note that it is not necessary for all devices in the chain to sample the data simultaneously. But all of the devices
must operate with the same exact conversion speed.
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nth CONV
n + 1 Tracking
n + 1 Conversion
CONVST #1
See Figure 6 for details
CS
t
w5
RD #1
BUS_BUSY
(Last device)
BUS_BUSY #1
RD #2
SDO #1
SDI #2
16−Bit Data
nth conversion
See Figure 12 for details
SYNC_O #1
SYNC_I #2
t
d18
BUS_BUSY #2
RD #3
#1 16−Bits
nth conversion
#2 16−Bits
nth conversion
SDO #2
SDI #3
SYNC_O #2
SYNC_I #3
Figure 11. Data Read Operation for Devices in Daisy Chain
DATA READ OPERATION
On power up, BUS_BUSY of all of the devices is low. The devices receive CONVST or CSTART to sample and
start the conversion. The first device in the chain starts the data read cycle at the end of its conversion.
BUS_BUSY of device 1 (connected to RD of device 2) goes high on the read cycle start. Device 2 BUS_BUSY
goes high on the rising edge of RD. This propagates until the last device in the chain. Device 2 receives CLK_I,
SDI, and SYNC_I from device 1 and it passes all of these signals to the next device. Device 2 (and every
subsequent device in the chain) passes the received signals to its output until it sees the falling edge of RD
(same as BUS_BUSY of the previous device). In daisy chain mode, BUS_BUSY for any device falls when it has
passed all of the previous device data followed by its own data. The falling edge of BUS_BUSY occurs before
the rising edge of SYNC_O. This indicates to the receiving device that the previous data chain is over and it is its
own turn to output the data. The device outputs the data from the last completed conversion. BUS_BUSY of the
last device in the chain is fed back to RD of the first device as shown in Figure 10 (or device 1 RD tied to 0). This
makes sure that RD of device 1 is low before its conversion is over. The chain continues with only one external
signal (CONVST or CSTART) when CS is held low. Every device LVDS output goes to 3-state once all data
transfer through the device has been completed.
CS going high during the data read cycle of any device 3-states its SYNC_O and SDO. This halts the
propagation of data through the chain. To reset this condition it is necessary to assert CS high for all devices.
The new read sequence starts only after CS for all devices is low before point A as shown in Figure 6. The high
pulse on CS must be at least 20 ns wide. It is better to connect CS of all of the devices together to avoid
undesired halting of the daisy chain.
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CS = 0
BUS_BUSY #1
RD #2
t
d15
SYNC_O #1
SYNC_I #2
t
d16
16R
17R
18R
15R
CLK_O #1
CLK_I #2
LSB − 1
#1
LSB #1
SDO #1
SDO #2
BUSY_BUS #2 = 1
CLK_O #2
18R
17F 17R
t
pd1
SYNC_O #2
#1 DATA
LSB − 1
#1
LSB #1
MSB
MSB − 1
#2 DATA
Figure 12. Data Propagation from Device n to Device n+1 in Daisy Chain Mode
As shown in Figure 12 there is a propagation delay of tpd1 from SYNC_I to SYNC_O or SDI to SDO. Note that
the data frames of all devices in the chain appear seamless at the last device output. The rising edge of
SYNC_O occurs at an interval of 16 clocks (or 8 clocks in BYTE mode); this can be used as a data frame sync.
The deserializer at the output of the last device can shift the data on every falling edge of the clock and it can
latch the parallel 16-bit word on the second rising edge of CLK_O (shown as 18R) after every rising edge of
SYNC_O.
CASCADE
Figure 13 shows the cascade connection. The signals shown with double lines are LVDS and the others are
CMOS. Cascade mode is selected by setting MODE_C/D = 1. Similar to daisy chain, the first device in the chain
is identified by selecting LAT_Y/N = 0. For all other devices in the chain LAT_Y/N = 1. See Table 1 for more
details on device configuration. SDO, CLK_O, and SYNC_O are connected to the common bus. This means only
one device occupies the bus at a time, while LVDS drivers for all other devices 3-state. Unlike SDO and
SYNC_O, the clock cannot be switched out from device to device as the receiver requires a continuous clock. So
only device 1 outputs the clock and CLK_O of all other devices is 3-stated by appropriately setting M1+ and M1-
as listed in Table 1.
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Device 1
SD0
External Clock
CLK_0
CLK_I
SYNC_0
BUS_BUSY
+V
To Receiver
Last Device
BUS_BUSY
M1+,M2−
RD
CLK_I/E,
LAT_Y/N,
M1−,M2+
+V
MODE_C/D
CS
From Controller
Device 2
RD
SD0
CLK_I
CLK_0
SYNC_0
BUS_BUSY
+V
M1−,M2−,LAT_Y/N
M1+,M2+,
+V
MODE_C/D
CLK_I/E
CS
To Next Device
From Controller
Figure 13. Cascade Connection
CLOCK SOURCE
In this mode it is very critical to control the skew between the three LVDS o/p signals. It is recommended to use
external clock mode only for all of the devices in cascade. BUS_BUSY of device n is connected to RD of device
n + 1 and so on. Finally BUS_BUSY of the last device in the chain is to be connected to RD of device 1. This
ensures the necessary handshake to control the sequence of data reads for all of the devices in cascade. (It is
also allowed to tie RD to 0 for device 1.)
TIMING DIAGRAMS FOR CASCADE OPERATION
The conversion rate for n devices in cascade must be selected such that:
1/conversion speed > first device read cycle duration + (n - 1) next device read cycle duration
First device read cycle duration = read startup delay_1 + data frame duration + (td16 + td17
)
Next device read cycle duration = read startup delay_n + data frame duration + (td16 + td17
)
Read startup delay_1 = 10 ns + (td19 - td4 + td12) + 2/fclk
Read startup delay_n = (td13 + 2/fclk
)
Data frame duration = 16/fclk
Note that it is not necessary that all devices in the chain to sample the data simultaneously. But all of the devices
must operate with the same exact conversion speed.
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nth CONV
n + 1 Tracking
n + 1 Conversion
CONVST
See Figure 6 for details
CS
RD #1
BUS_BUSY #n
(Last device)
See Figure 15 for details
BUS_BUSY #1
RD #2
t
d18
BUS_BUSY #2
SDO
#2 16−Bits
nth conversion
#1 16−Bits
nth conversion
SYNC_O
SYNC_O #1
SYNC_O #2
Figure 14. Data Read Operation for Devices in Cascade Mode
DATA READ OPERATION
On power up, BUS_BUSY for all of the devices is low. The devices receive CONVST or CSTART to sample and
start the conversion. The first device starts the data read cycle at the end of its conversion. BUS_BUSY of device
1 (connected to RD of device 2) goes high on the read cycle start, indicating that it wants to occupy the bus.
Device 2 BUS_BUSY goes high on the rising edge of RD. This propagates until the last device.
Device 1 BUS_BUSY goes low after it outputs its data, at this time SDO and SYNC_O for device 1 go to 3-state.
The falling edge of BUS_BUSY (RD of the next device) indicates to the next device that it is its turn to output the
data. The next device outputs the data from the last completed conversion. BUS_BUSY of the last device goes
low and its SYNC_O and SDO go to 3-state after it outputs its data. BUS_BUSY of the last device is fed back to
RD of the first device as shown in Figure 13 (RD can also be tied to 0 for device 1). This ensures that RD of
device 1 is low before its conversion is over. The data read sequence continues with only one external signal,
CONVST or CSTART, when CS = 0. For any device, CS high during the data read cycle 3-states SYNC_O and
SDO of the device and halts the data read sequence. To reset this condition it is necessary to assert CS high for
all of the devices. The new read sequence starts only after CS for all of the devices is low before point A as
shown in Figure 6. The high pulse on CS must be at least 20 ns wide. It is better to connect CS for all of the
devices together to avoid undesired halting of the data read sequence.
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CS = 0
BUS_BUSY #1
RD #2
t
d17
SYNC_O #1
16R
17R
18R
15R
CLK_O #1
SDO #1
t
d16
LSB − 1
#1
LSB #1
t
BUSY_BUS #2 = 1
SYNC_O #2
d13
1F #2
2R #2
SDO #2
MSB
MSB − 1
Figure 15. Device n Read Cycle End and Device n+1 Read Cycle Start
Unlike daisy chain, the data frames of all the devices in cascade are not seamless and there is a loss of time
between one device 3-state to other device data valid due to wakeup time from 3-state and a two clock phase
shift between SYNC and data (see Figure 15 for details). As a result, the number of data frames per second in
this mode is less than in daisy chain mode. Also, a maximum of 4 devices can be cascaded on the same bus.
But, I/O power per device is considerably lower in cascade as compared to daisy chain as each device LVDS o/p
goes to 3-state after its data transfer. The deserializer at the output of the last device can shift the data on every
clock falling edge, and it can latch the parallel 16-bit word on the second CLK_O rising edge (shown as 18R)
after every SYNC_O rising edge.
THEORY OF OPERATION
The ADS8413 is a member of the high-speed successive approximation register (SAR) analog-to-digital
converters family. The architecture is based on charge redistribution, which inherently includes a sample/hold
function. The device includes a built-in conversion clock, internal reference, and 200-MHz LVDS serial interface.
The device can be operated at maximum throughput of 2 MSPS.
ANALOG INPUT
An analog input is provided to two input pins: +IN and -IN. When a conversion is initiated, the voltage difference
between these pins is sampled on the internal capacitor array. While a conversion is in progress, both inputs are
disconnected from any internal function.
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THEORY OF OPERATION (continued)
+VA
ADS8413
170 W
+IN
−IN
+
_
170 W
25 pF
25 pF
AGND
AGND
Figure 16. Simplified Input Circuit
When the converter enters hold mode, the voltage difference between the +IN and -IN inputs is captured on the
internal capacitor array. The input current on the analog inputs depends upon a number of factors: sample rate,
input voltage, signal frequency, and source impedance. Essentially, the current into the ADS8413 charges the
internal capacitor array during the sample period. After this capacitance has been fully charged, there is no
further input current (this may not happen when the signal is moving continuously). The source of the analog
input voltage must be able to charge the input capacitance (25 pF) to better than a 16-bit settling level with a
step input within the acquisition time of the device. For calculation, the step size can be selected equal to the
maximum voltage difference between two consecutive samples at the maximum signal frequency (see the
TYPICAL ANALOG INPUT CIRCUIT section). When the converter goes into hold mode, the input impedance is
greater than 1GΩ.
49.9 W
V +
CC
7
2
−
6
THS4031
3
+
INPUT+
8
12 11
1
1 mF
10 mF
0.1 mF
A
4
+
NULL
NULL
REF
15 W
REFIN
+IN
V
V
−
CC
18
19
49.9 W
680 pF
+
CC
−IN
15 W
ADS8413
7
2
−
6
THS4031
3
+
INPUT−
8
1
4
NULL
NULL
V −
CC
Figure 17. Typical Analog Input Schematic
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THEORY OF OPERATION (continued)
Care must be taken regarding the absolute analog input voltage. To maintain the linearity of the converter, both
-IN and +IN inputs should be within the limits specified. Outside of these ranges, the converter linearity may not
meet specifications. Care should be taken to ensure that +IN and -IN see the same impedance to the respective
sources. If this is not observed, the two inputs could have different setting times. This may result in offset error,
gain error, and linearity error which changes with temperature and input voltage.
REFERENCE
The ADS8413 has a built-in 4.096-V (nominal value) reference. The ADS8413 can also operate with an external
reference. When the internal reference is used, pin 14 (REFOUT) should be connected to pin 13 (REFIN), and a
0.1-µF decoupling capacitor and 1-µF storage capacitor must be connected between pin 14 (REFOUT) and pins
11 and 12 (REFM) (see Figure 18). The internal reference of the converter is buffered.
ADS8413
REFOUT
REFIN
1 mF
0.1 mF
REFM
AGND
Figure 18. Using Internal Reference
The REFIN pin is also internally buffered. This eliminates the need to put a high bandwidth buffer onboard to
drive the ADC reference and saves system area and power. When an external reference is used, the reference
must be low noise, which can be achieved by the additional bypass capacitor from the REFIN pin to the REFM
pin (see Figure 19). REFM must be connected to the analog ground plane.
ADS8413
REFOUT
0.1 mF
50 W
REF3040
REFIN
REFM
0.1 mF
22 mF
1 mF
AGND
AGND
Figure 19. Using External Reference
DIGITAL INTERFACE
TIMING AND CONTROL
Refer to the timing diagrams and TIMING REQUIREMENTS table for detailed information.
SAMPLING AND CONVERSION
Sampling and conversion is controlled by the CONVST pin. For higher noise performance it is essential to have
low jitter on the falling edge of CONVST. The device uses the internally generated clock for conversion, hence it
has a fixed conversion time.
22
ADS8413
www.ti.com
SLAS490–OCTOBER 2005
THEORY OF OPERATION (continued)
READING DATA
The ADS8413 includes a high-speed LVDS serial interface. As discussed prior, an external clock (CLK_I, less
than 200 MHz) or an internal 200-MHz clock can be used for a data read. The device outputs data in two’s
compliment format. Table 3 lists the ideal output codes.
Table 3. Ideal Input Voltages and Output Codes
DESCRIPTION
Full-scale range
ANALOG VALUE (+IN – (–IN))
HEX CODE
2(+Vref
)
–
Least significant bit (LSB)
Full scale
2(+Vref)/216
Vref – 1 LSB
0 V
–
7FFF
0000
FFFF
8000
Midscale
Midscale – 1LSB
–Full scale
0 V – 1 LSB
–Vref
23
ADS8413
www.ti.com
SLAS490–OCTOBER 2005
The restrictions on read cycle start are described in the section RESTRICTIONS ON READ CYCLE START (see
Figure 9).
ADS8413
SDO+
SN65LVDS152 #1
V
CC
DI+
LVI
100 W
100 W
100 W
GND
EN
BYTE
SDO−
DI−
CO_EN
SYNC_O+
LCI+
D15−D6
D9−D0
SYNC_O−
CLK_O+
LCI−
MCI+
CLK_O−
MCI−
CO−
CO+
SN65LVDS152 #2
V
CC
DI+
LVI
100 W
EN
DI−
LCI+
D5−D0
D9−D4
LCI−
MCI+
MCI−
CO−
CO_EN
CO+
Figure 20. 16-Bit Data De-Serialization While BYTE = 0
24
ADS8413
www.ti.com
SLAS490–OCTOBER 2005
ADS8413
SDO+
SN65LVDS152
V
CC
+VBD
DI+
LVI
100 W
100 W
100 W
EN
BYTE
SDO−
DI−
SYNC_O+
LCI+
D7−D0
D9−D2
SYNC_O−
CLK_O+
LCI−
MCI+
CLK_O−
MCI−
CO−
CO_EN
CO+
Figure 21. 8-Bit Data De-Serialization While BYTE = 1, Data
POWER SAVING
The converter provides two power saving modes, full powerdown and nap. Table 4 lists information on the
activation/deactivation and resumption times for both modes.
Table 4. Powerdown Modes
POWERDOWN
MODE
POWER
CONSUMPTION
RESUME POWER
BY
SDO
ACTIVATED BY
NA
ACTIVATION TIME
NA
Normal operation
Refer to DATA READ
OPERATION section
58 mA
1 µA
NA
Full powerdown
(internal reference)
3 Stated
PD = 0
PD = 0
Nap = 1
td21
PD = 1
PD = 1
Sample start
Full powerdown
(external reference)
3 Stated
1 µA
td21
Nap powerdown
Not 3 stated
25 mA
150 ns
FULL POWERDOWN MODE
Full powerdown mode is activated by deasserting PD = 0; the device takes td21 ns to reach the full powerdown
state. The device can return to normal mode from full powerdown by asserting PD = 1. The powerup sequence is
different for device operation with an internal reference or external reference as shown in Figure 22 and
Figure 23.
25
ADS8413
www.ti.com
SLAS490–OCTOBER 2005
PD
t
w6
Invalid Conversion
Valid Conversion
t
d20
SDO
t
d22
1
2
3
BUSY
VREF
t
d21
t
s1
I
PD
CC
Full I
CC
Full I
CC
Figure 22. Device Full Powerdown and Powerup Sequence with Device Operation in Internal Reference
Mode
When an internal reference is used, a conversion can be started td22 ns after asserting PD = 1. After the first
three conversions, ts1 ns are required for reference voltage settling to the trimmed value. Any conversions after
this provide data at the specified accuracy.
PD
t
w6
Invalid Conversion
Valid Conversion
t
d20
SDO
t
d22
1
2
3
BUSY
t
d21
I
PD
CC
Full I
Full I
CC
CC
Figure 23. Device Full Powerdown and Powerup Sequence with Device Operation in External Reference
Mode
When an external reference is used, a conversion can be started td22 n after asserting PD = 1. The first three
conversions are required for internal circuit stabilization. Any conversions after this provide data at the specified
accuracy.
NAP MODE
The device automatically enters the nap state if nap = 1 at end of a conversion, and it remains in the nap state
until the start of the sampling phase. A minimum of 150 ns is required after a sample start for the device to come
out of the nap state and to perform normal sampling. So the minimum sampling time needed for nap mode is
tacq(min) + 150 ns, or the maximum conversion speed in nap mode is 1.5 MHz.
26
ADS8413
www.ti.com
SLAS490–OCTOBER 2005
LAYOUT
For optimum performance, care should be taken with the physical layout of the ADS8413 circuitry. The device
offers single-supply operation, and it is often used in close proximity with digital logic, FPGA, microcontrollers,
microprocessors, and digital signal processors. The more digital logic present in the design and the higher the
switching speed, the more difficult it is to achieve good performance from the converter.
The basic SAR architecture is sensitive to glitches or sudden changes on the power supply, reference, ground
connections, and digital inputs that occur just prior to the end of sampling and just prior to latching the output of
the analog comparator during the conversion phase. Such glitches might originate from switching power supplies,
nearby digital logic, or high power devices. Noise during the end of sampling and the later half of a conversion
must be kept to a minimum (the former half of a conversion is not very sensitive since the device uses a
proprietary error correction algorithm to correct for transient errors during this period).
The degree of error in the digital output depends on the reference voltage, layout, and the exact timing of the
external event. On average, the device draws very little current from an external reference as the reference
voltage is internally buffered. If the reference voltage is external and originates from an op amp, make sure that it
can drive the bypass capacitor or capacitors without oscillation. A 0.1-µF bypass capacitor and 1-µF storage
capacitor are recommended from REFIN directly to REFM.
The AGND and BDGND pins should be connected to a clean ground point. In all cases, this should be the
analog ground. Avoid connections that are too close to the grounding point of a microcontroller or digital signal
processor. If required, run a ground trace directly from the converter to the power supply entry point. The ideal
layout consists of an analog ground plane dedicated to the converter and associated analog circuitry.
As with the AGND connections, +VA should be connected to a +5-V power supply plane that is separate from the
connection for +VBD and digital logic until they are connected at the power entry point onto the PCB. Power to
the ADC should be clean and well bypassed. A 0.1-µF ceramic bypass capacitor should be placed as close to
the device as possible. See Table 5 for the placement of the capacitor. In addition to the 0.1-µF capacitor, a 1-µF
capacitor is recommended. In some situations, additional bypassing may be required, such as a 100-µF
electrolytic capacitor or even a Pi filter made up of inductors and capacitors; all designed to essentially low-pass
filter the +5-V supply, thus removing the high frequency noise.
Table 5. Power Supply Decoupling Capacitor Placement
POWER SUPPLY PLANE
CONVERTER ANALOG SIDE
CONVERTER DIGITAL SIDE
(44,45)
SUPPLY PINS
Pair of pins require a shortest path to decoupling (9,10) (16,17) (20,21) (22,23) (26,27 or 25,26)
capacitors
(36,37)
TYPICAL CHARACTERISTICS
HISTOGRAM (DC CODE SPREAD
HISTOGRAM (DC CODE SPREAD
WITH I/P CLOSE TO FS)
EFFECTIVE NUMBER OF BITS
vs
FREE-AIR TEMPERATURE
AT THE CENTER OF CODE)
120000
100000
80000
60000
40000
20000
140000
15.25
15.2
+VA = 5 V,
108126
+VA = 5 V,
121865
+VA = 5 V,
f = 1 kHz,
T
= 25°C,
i
A
120000
100000
80000
60000
40000
20000
T
= 25°C,
= 2 MSPS,
f
= 2 MSPS,
V = 4.096 V
ref
A
f
s
= 2 MSPS,
= 4.096 V
s
f
s
15.15
15.1
V
ref
V
ref
= 4.096 V
15.05
15
14.95
14.9
30724
65507
20721
32766
14.85
11013
8436
230
8
14.8
8
7
0
0
14.75
65504
65505
65506
Code
65508
32763
32764
32765
Code
32767
−40
−20
0
20
40
60
80
T
A
− Free-Air Temperature − °C
Figure 24.
Figure 25.
Figure 26.
27
ADS8413
www.ti.com
SLAS490–OCTOBER 2005
TYPICAL CHARACTERISTICS (continued)
SIGNAL TO NOISE AND
DISTORTION
SIGNAL TO NOISE RATIO
SPURIOUS FREE DYNAMIC RANGE
vs
vs
vs
FREE-AIR TEMPERATURE
FREE-AIR TEMPERATURE
FREE-AIR TEMPERATURE
93
92.8
92.6
92.4
92.2
93
92.8
92.6
92.4
92.2
−105
+VA = 5 V,
+VA = 5 V,
f = 1 kHz,
+VA = 5 V,
−106
−107
−108
f = 1 kHz,
f = 1 kHz,
i
i
i
f
s
= 2 MSPS,
= 4.096 V
f
s
= 2 MSPS,
= 4.096 V
f
V
= 2 MSPS,
= 4.096 V
s
ref
V
V
ref
ref
−109
−110
−111
−112
−113
−114
−115
92
91.8
91.6
91.4
91.2
91
92
91.8
91.6
91.4
91.2
91
−40
−20
0
20
40
60
80
−40
−20
0
20
40
60
80
−40
−20
0
20
40
60
80
T
A
− Free-Air Temperature − °C
T
A
− Free-Air Temperature − °C
T
A
− Free-Air Temperature − °C
Figure 27.
Figure 28.
Figure 29.
TOTAL HARMONIC DISTORTION
vs
EFFECTIVE NUMBER OF BITS
SIGNAL TO NOISE AND
DISTORTION
vs
FREE-AIR TEMPERATURE
INPUT FREQUENCY
vs
INPUT FREQUENCY
−100
−101
−102
−103
−104
−105
16
15
93
92
91
90
89
88
87
86
85
84
83
+VA = 5 V,
+VA = 5 V,
T
= 25°C,
= 2 MSPS,
A
f = 1 kHz,
i
f
s
f
s
= 2 MSPS,
V
ref
= 4.096 V
V
ref
= 4.096 V
−106
−107
−108
−109
−110
14
13
+VA = 5 V,
T
= 25°C,
A
f
s
= 2 MSPS,
= 4.096 V
V
ref
0.1
1
10
100
1000
0.1
1
10
100
1000
−40
−20
0
20
40
60
80
f − Input Frequency − kHz
I
f − Input Frequency − kHz
I
T
A
− Free-Air Temperature − °C
Figure 30.
Figure 31.
Figure 32.
28
ADS8413
www.ti.com
SLAS490–OCTOBER 2005
TYPICAL CHARACTERISTICS (continued)
SIGNAL TO NOISE RATIO
vs
SPURIOUS FREE DYNAMIC RANGE
TOTAL HARMONIC DISTORTION
vs
vs
INPUT FREQUENCY
INPUT FREQUENCY
INPUT FREQUENCY
−80
−85
93
92
91
90
89
88
−90
−95
+VA = 5 V,
+VA = 5 V,
+VA = 5 V,
= 25°C,
T
= 25°C,
= 2 MSPS,
A
T
= 25°C,
= 2 MSPS,
T
A
A
f
s
f
s
f
V
= 2 MSPS,
s
V
ref
= 4.096 V
V
ref
= 4.096 V
= 4.096 V
ref
−90
−100
−105
−110
−115
−120
−95
−100
−105
−110
−115
0.1
1
10
100
1000
0.1
1
10
100
1000
0.1
1
10
100
1000
f
I
− Input Frequency − kHz
f − Input Frequency − kHz
I
f − Input Frequency − kHz
I
Figure 33.
Figure 34.
Figure 35.
OFFSET ERROR
vs
SUPPLY VOLTAGE
GAIN ERROR
vs
SUPPLY VOLTAGE
OFFSET ERROR
vs
FREE-AIR TEMPERATURE
0.01
0.009
0.008
0.15
0.13
0.11
0.1
0.08
0.06
0.04
f
= 2 MSPS,
s
T
= 25°C,
= 2 MSPS,
A
V = 4.096 V,
+VA = 5 V
f
s
ref
V
= 4.096 V
ref
0.007
0.006
0.005
0.004
0.003
0.002
0.001
0
0.09
0.07
0.05
0.03
0.01
−0.01
0.02
0
−0.02
−0.04
−0.06
T
= 25°C,
A
f
s
= 2 MSPS,
= 4.096 V
V
ref
−0.08
−0.1
4.75
4.85
4.95
5.05
5.15
5.25
4.75
4.85
4.95
5.05
5.15
5.25
−40
−20
0
20
40
60
80
V
CC
− Supply Voltage − +VA in V
V
CC
− Supply Voltage − +VA in V
T
A
− Free-Air Temperature − °C
Figure 36.
Figure 37.
Figure 38.
GAIN ERROR
vs
FREE-AIR TEMPERATURE
POWER DISSIPATION
vs
POWER DISSIPATION
vs
SUPPLY VOLTAGE
SAMPLE RATE
0.015
320
315
+VA = 5 V,
T
A
= 25°C,
300
250
f
V
= 2 MSPS,
s
f
V
= 2 MSPS,
s
Normal
= 4.096 V
ref
0.01
= 4.096 V
ref
310
305
300
295
290
0.005
Nap
0
−0.005
−0.01
200
150
100
285
280
+VA = 5 V,
T
V
= 25°C,
A
= 4.096 V
ref
275
270
−0.015
−40
−20
0
20
40
60
80
4.75
4.85
4.95
5.05
5.15
5.25
0
0.5
1
1.5
2
T
A
− Free-Air Temperature − °C
V
CC
− Supply Voltage − +VA in V
Sample Rate − MSPS
Figure 39.
Figure 40.
Figure 41.
29
ADS8413
www.ti.com
SLAS490–OCTOBER 2005
TYPICAL CHARACTERISTICS (continued)
POWER DISSIPATION
vs
FREE-AIR TEMPERATURE
DIFFERENTIAL NONLINEARITY
INTEGRAL NONLINEARITY
vs
FREE-AIR TEMPERATURE
vs
FREE-AIR TEMPERATURE
320
315
310
305
300
295
290
1.5
2
f
V
= 2 MSPS,
+VA = 5 V,
s
+VA = 5 V,
= 2 MSPS,
= 4.096 V,
f = 2 MSPS,
ref
s
f
s
1.5
+VA = 5 V
V
ref
= 4.096 V
V
ref
= 4.096 V
max
1
1
max
0.5
0.5
0
−0.5
−1
0
min
min
40
−0.5
285
280
−1.5
−2
−1
−40
−40
−20
0
20
40
60
80
−40
−20
0
20
40
60
80
−20
0
20
60
80
T
A
− Free-Air Temperature − °C
T
A
− Free-Air Temperature − °C
T
A
− Free-Air Temperature − °C
Figure 42.
Figure 43.
Figure 44.
POSITIVE INTEGRAL
NONLINEARITY
DISTRIBUTION OVER 25 UNITS
NEGATIVE INTEGRAL
NONLINEARITY
DISTRIBUTION OVER 25 UNITS
INTERNAL REFERENCE OUTPUT
vs
SUPPLY VOLTAGE
12
10
12
10
8
4.112
4.108
T
= 25°C,
= 2 MSPS,
A
f
s
V
= 4.096 V
ref
4.104
4.1
8
6
4
4.096
6
4.092
4.088
4
4.084
4.08
2
0
2
4.75 4.8 4.85 4.9 4.95
5
5.05 5.1 5.15 5.2 5.25
0
V
CC
− Supply Voltage − +VA in V
0.8
0.9
1
1.1
1.2
−1.4
−1.2
−1.0
−0.8
−0.6
INL − Integral Nonlinearity max − LSB
INL − Integral Nonlinearity min − LSB
Figure 45.
Figure 46.
Figure 47.
30
ADS8413
www.ti.com
SLAS490–OCTOBER 2005
TYPICAL CHARACTERISTICS (continued)
INTERNAL REFERENCE OUTPUT
vs
FREE-AIR TEMPERATURE
4.112
4.108
4.104
4.1
f
V
= 2 MSPS,
= 4.096 V,
s
ref
+VA = 5 V
4.096
4.092
4.088
4.084
4.08
−40
−20
0
20
40
60
80
T
A
− Free-Air Temperature − °C
Figure 48.
1.5
1
0.5
0
−0.5
−1
32767
65535
0
Figure 49. Typical DNL
2
1.5
1
0.5
0
−0.5
−1
−1.5
−2
0
32767
65535
Figure 50. Typical INL
31
ADS8413
www.ti.com
SLAS490–OCTOBER 2005
TYPICAL CHARACTERISTICS (continued)
0
−20
−40
−60
−80
−100
−120
−140
−160
−180
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1
f − Frequency − MHz
Figure 51. Typical FFT
PARAMETER MEASUREMENT INFORMATION
DRIVER
I
OY
Driver Enable
Y
Z
I
I
V
OD
+ V
2
V
OY
OZ
I
V
OY
OZ
V
I
V
OC
V
OZ
Driver Enable
Input
Y
100 W
+ 1%
V
OD
Z
C
L
= 10 pF
(2 Places)
Figure 52. Driver Voltage and Current Definitions
32
ADS8413
www.ti.com
SLAS490–OCTOBER 2005
PARAMETER MEASUREMENT INFORMATION (continued)
100%
80%
V
OD(H)
Differential
Output
0 V
V
OD(L)
20%
0%
t
f
t
r
Figure 53. Timing and Voltage Definitions of the Differential Output Signal
Driver Enable
49.9 Ω, ±1% (2 Places)
3 V
0 V
Y
Z
Input
V
OC
V
OC(PP)
C = 10 pF
L
(2 Places)
V
OC(SS)
V
OC
Figure 54. Test Circuit and Definitions for the Driver Common-Mode Output Voltage
A
V
) V
R
IA
IB
V
ID
2
V
IA
B
V
O
V
IC
V
IB
Figure 55. Receiver Voltage Definitions
33
PACKAGE OPTION ADDENDUM
www.ti.com
7-Oct-2021
PACKAGING INFORMATION
Orderable Device
Status Package Type Package Pins Package
Eco Plan
Lead finish/
Ball material
MSL Peak Temp
Op Temp (°C)
Device Marking
Samples
Drawing
Qty
(1)
(2)
(3)
(4/5)
(6)
ADS8413IBRGZT
ACTIVE
VQFN
RGZ
48
250
RoHS & Green
Call TI
Level-2-260C-1 YEAR
-40 to 85
ADS8413I
B
(1) The marketing status values are defined as follows:
ACTIVE: Product device recommended for new designs.
LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect.
NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design.
PREVIEW: Device has been announced but is not in production. Samples may or may not be available.
OBSOLETE: TI has discontinued the production of the device.
(2) RoHS: TI defines "RoHS" to mean semiconductor products that are compliant with the current EU RoHS requirements for all 10 RoHS substances, including the requirement that RoHS substance
do not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, "RoHS" products are suitable for use in specified lead-free processes. TI may
reference these types of products as "Pb-Free".
RoHS Exempt: TI defines "RoHS Exempt" to mean products that contain lead but are compliant with EU RoHS pursuant to a specific EU RoHS exemption.
Green: TI defines "Green" to mean the content of Chlorine (Cl) and Bromine (Br) based flame retardants meet JS709B low halogen requirements of <=1000ppm threshold. Antimony trioxide based
flame retardants must also meet the <=1000ppm threshold requirement.
(3) MSL, Peak Temp. - The Moisture Sensitivity Level rating according to the JEDEC industry standard classifications, and peak solder temperature.
(4) There may be additional marking, which relates to the logo, the lot trace code information, or the environmental category on the device.
(5) Multiple Device Markings will be inside parentheses. Only one Device Marking contained in parentheses and separated by a "~" will appear on a device. If a line is indented then it is a continuation
of the previous line and the two combined represent the entire Device Marking for that device.
(6)
Lead finish/Ball material - Orderable Devices may have multiple material finish options. Finish options are separated by a vertical ruled line. Lead finish/Ball material values may wrap to two
lines if the finish value exceeds the maximum column width.
Important Information and Disclaimer:The information provided on this page represents TI's knowledge and belief as of the date that it is provided. TI bases its knowledge and belief on information
provided by third parties, and makes no representation or warranty as to the accuracy of such information. Efforts are underway to better integrate information from third parties. TI has taken and
continues to take reasonable steps to provide representative and accurate information but may not have conducted destructive testing or chemical analysis on incoming materials and chemicals.
TI and TI suppliers consider certain information to be proprietary, and thus CAS numbers and other limited information may not be available for release.
In no event shall TI's liability arising out of such information exceed the total purchase price of the TI part(s) at issue in this document sold by TI to Customer on an annual basis.
Addendum-Page 1
GENERIC PACKAGE VIEW
RGZ 48
7 x 7, 0.5 mm pitch
VQFN - 1 mm max height
PLASTIC QUADFLAT PACK- NO LEAD
Images above are just a representation of the package family, actual package may vary.
Refer to the product data sheet for package details.
4224671/A
www.ti.com
PACKAGE OUTLINE
VQFN - 1 mm max height
RGZ0048A
PLASTIC QUADFLAT PACK- NO LEAD
A
7.1
6.9
B
(0.1) TYP
7.1
6.9
SIDE WALL DETAIL
OPTIONAL METAL THICKNESS
PIN 1 INDEX AREA
(0.45) TYP
CHAMFERED LEAD
CORNER LEAD OPTION
1 MAX
C
SEATING PLANE
0.08 C
0.05
0.00
2X 5.5
5.15±0.1
(0.2) TYP
13
24
44X 0.5
12
25
SEE SIDE WALL
DETAIL
SYMM
2X
5.5
1
36
0.30
0.18
PIN1 ID
(OPTIONAL)
48X
48
37
SYMM
0.1
C A B
C
0.5
0.3
48X
0.05
SEE LEAD OPTION
4219044/D 02/2022
NOTES:
1. All linear dimensions are in millimeters. Any dimensions in parenthesis are for reference only. Dimensioning and tolerancing
per ASME Y14.5M.
2. This drawing is subject to change without notice.
3. The package thermal pad must be soldered to the printed circuit board for optimal thermal and mechanical performance.
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EXAMPLE BOARD LAYOUT
VQFN - 1 mm max height
RGZ0048A
PLASTIC QUADFLAT PACK- NO LEAD
2X (6.8)
5.15)
SYMM
(
48X (0.6)
37
48
48X (0.24)
44X (0.5)
1
36
SYMM
2X
2X
(5.5)
(6.8)
2X
(1.26)
2X
(1.065)
(R0.05)
TYP
25
12
21X (Ø0.2) VIA
TYP
24
13
2X (1.065)
2X (1.26)
2X (5.5)
LAND PATTERN EXAMPLE
SCALE: 15X
SOLDER MASK
OPENING
0.07 MIN
ALL AROUND
0.07 MAX
ALL AROUND
EXPOSED METAL
EXPOSED METAL
METAL
SOLDER MASK
OPENING
METAL UNDER
SOLDER MASK
NON SOLDER MASK
DEFINED
(PREFERRED)
SOLDER MASK
DEFINED
SOLDER MASK DETAILS
4219044/D 02/2022
NOTES: (continued)
4. This package is designed to be soldered to a thermal pad on the board. For more information, see Texas Instruments literature
number SLUA271 (www.ti.com/lit/slua271).
5. Vias are optional depending on application, refer to device data sheet. If any vias are implemented, refer to their locations shown
on this view. It is recommended that vias under paste be filled, plugged or tented.
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EXAMPLE STENCIL DESIGN
VQFN - 1 mm max height
RGZ0048A
PLASTIC QUADFLAT PACK- NO LEAD
2X (6.8)
SYMM
(
1.06)
37
48X (0.6)
48
48X (0.24)
44X (0.5)
1
36
SYMM
2X
2X
(5.5)
(6.8)
2X
(0.63)
2X
(1.26)
(R0.05)
TYP
25
12
24
13
2X
(1.26)
2X (0.63)
2X (5.5)
SOLDER PASTE EXAMPLE
BASED ON 0.125 mm THICK STENCIL
EXPOSED PAD
67% PRINTED COVERAGE BY AREA
SCALE: 15X
4219044/D 02/2022
NOTES: (continued)
6. Laser cutting apertures with trapezoidal walls and rounded corners may offer better paste release. IPC-7525 may have alternate
design recommendations.
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