AMC1202 [TI]
±50mV 输入、精密电流检测基本隔离式放大器;型号: | AMC1202 |
厂家: | TEXAS INSTRUMENTS |
描述: | ±50mV 输入、精密电流检测基本隔离式放大器 放大器 |
文件: | 总33页 (文件大小:1768K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
AMC1202
ZHCSOJ6 – MAY 2021
AMC1202 精密、±50mV 输入、基本隔离放大器
1 特性
3 说明
•
±50mV 输入电压范围,针对使用分流电阻器测量电
AMC1202 是一款隔离式精密放大器,此放大器的输出
与输入电路由抗电磁干扰性能极强的隔离层隔开。该隔
离栅经认证可提供高达 3kVRMS 的基本电隔离,符合
VDE V 0884-11 和 UL1577 标准,并且可支持最高 1
kVRMS 的工作电压。
流进行了优化
•
•
固定增益:41
低直流误差:
– 失调电压误差:±50μV(最大值)
– 温漂:±0.8µV/°C(最大值)
– 增益误差:±0.2%(最大值)
– 增益漂移:±35ppm/°C(最大值)
– 非线性度:0.03%(最大值)
高侧和低侧以 3.3V 或 5V 电压运行
失效防护输出
高 CMTI:100kV/µs(最小值)
低 EMI,符合 CISPR-11 和 CISPR-25 标准
安全相关认证:
该隔离栅可将系统中以不同共模电压电平运行的各器件
隔开,并保护电压较低的器件免受高电压冲击。
AMC1202 的输入针对直接连接低阻抗分流电阻器或其
他具有低信号电平的低阻抗电压源的情况进行了优化。
出色的直流精度和低温漂支持在 –40°C 至 +125°C 的
整个汽车温度范围内,在 PFC 级、直流/直流转换器、
牵引逆变器和 OBC 中进行精确的电流控制。
•
•
•
•
•
集成的无分流器和无高侧电源检测功能可简化系统级设
计和诊断。
– 4250-VPK 基本隔离,符合 DIN VDE V
0884-11:2017-01
器件信息(1)
– 符合 UL1577 标准且长达 1 分钟的 3000VRMS
隔离
器件型号
AMC1202
封装
封装尺寸(标称值)
SOIC (8)
5.85mm × 7.50mm
2 应用
•
(1) 如需了解所有可用封装,请参阅数据表末尾的可订购产品附
基于分流电阻器的电流感应,可用于:
– HEV/EV 充电桩
录。
– HEV/EV 车载充电器 (OBC)
– HEV/EV 直流/直流转换器
– HEV/EV 牵引逆变器
High-side supply
(3.3 V or 5 V)
Low-side supply
(3.3 V or 5 V)
AMC1202
VDD1
VDD2
OUTP
I
INP
INN
+50 mV
mV
0 V
VCMout
±2.05 V
ADC
–
OUTN
GND2
GND1
典型应用
本文档旨在为方便起见,提供有关 TI 产品中文版本的信息,以确认产品的概要。有关适用的官方英文版本的最新信息,请访问
www.ti.com,其内容始终优先。TI 不保证翻译的准确性和有效性。在实际设计之前,请务必参考最新版本的英文版本。
English Data Sheet: SBASAB8
AMC1202
ZHCSOJ6 – MAY 2021
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Table of Contents
1 特性................................................................................... 1
2 应用................................................................................... 1
3 说明................................................................................... 1
4 Revision History.............................................................. 2
5 Pin Configuration and Functions...................................3
6 Specifications.................................................................. 4
6.1 Absolute Maximum Ratings ....................................... 4
6.2 ESD Ratings .............................................................. 4
6.3 Recommended Operating Conditions ........................4
6.4 Thermal Information ...................................................5
6.5 Power Ratings ............................................................5
6.6 Insulation Specifications ............................................ 6
6.7 Safety-Related Certifications ..................................... 7
6.8 Safety Limiting Values ................................................7
6.9 Electrical Characteristics ............................................8
6.10 Switching Characteristics .........................................9
6.11 Timing Diagram.........................................................9
6.12 Insulation Characteristics Curves........................... 10
6.13 Typical Characteristics............................................ 11
7 Detailed Description......................................................17
7.1 Overview...................................................................17
7.2 Functional Block Diagram.........................................17
7.3 Feature Description...................................................17
7.4 Device Functional Modes..........................................19
8 Application and Implementation..................................20
8.1 Application Information............................................. 20
8.2 Typical Application.................................................... 20
9 Power Supply Recommendations................................23
10 Layout...........................................................................24
10.1 Layout Guidelines................................................... 24
10.2 Layout Example...................................................... 24
11 Device and Documentation Support..........................25
11.1 Documentation Support.......................................... 25
11.2 Trademarks............................................................. 25
11.3 Electrostatic Discharge Caution..............................25
11.4 术语表..................................................................... 25
12 Mechanical, Packaging, and Orderable
Information.................................................................... 25
4 Revision History
注:以前版本的页码可能与当前版本的页码不同
DATE
REVISION
NOTES
May 2021
*
Initial Release
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5 Pin Configuration and Functions
VDD1
INP
1
2
3
4
8
7
6
5
VDD2
OUTP
OUTN
GND2
INN
GND1
Not to scale
图 5-1. DWV Package, 8-Pin SOIC, Top View
表 5-1. Pin Functions
PIN
NAME
TYPE
DESCRIPTION
NO.
1
2
VDD1
INP
High-side power
Analog input
High-side power supply.(1)
Noninverting analog input. Either INP or INN must have a DC current path to GND1
to define the common-mode input voltage.(2)
Inverting analog input. Either INP or INN must have a DC current path to GND1 to
define the common-mode input voltage.(2)
3
INN
Analog input
4
5
6
7
8
GND1
GND2
OUTN
OUTP
VDD2
High-side ground
Low-side ground
Analog output
High-side analog ground.
Low-side analog ground.
Inverting analog output.
Noninverting analog output.
Low-side power supply.(1)
Analog output
Low-side power
(1) See the Power Supply Recommendations section for power-supply decoupling recommendations.
(2) See the Layout section for details.
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6 Specifications
6.1 Absolute Maximum Ratings
over operating ambient temperature range (unless otherwise noted)(1)
MIN
–0.3
MAX
UNIT
V
High-side VDD1 to GND1
Power-supply voltage
6.5
6.5
Low-side VDD2 to GND2
–0.3
V
Analog input voltage
Output voltage
Input current
INP, INN
GND1 – 6
GND2 – 0.5
–10
VDD1 + 0.5
VDD2 + 0.5
10
V
OUTP, OUTN
V
Continuous, any pin except power-supply pins
mA
Junction, TJ
Storage, Tstg
150
Temperature
°C
–65
150
(1) Operation outside the Absolute Maximum Ratings may cause permanent device damage. Absolute Maximum Ratings do not imply
functional operation of the device at these or any other conditions beyond those listed under Recommended Operating Conditions.
If used outside the Recommended Operating Conditions but within the Absolute Maximum Ratings, the device may not be fully
functional, and this may affect device reliability, functionality, performance, and shorten the device lifetime
6.2 ESD Ratings
VALUE
±2000
±1000
UNIT
Human body model (HBM), per ANSI/ESDA/JEDEC JS-001 (1)
Charged device model (CDM), per JESD22-C101 (2)
V(ESD)
Electrostatic discharge
V
(1) JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.
(2) JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process.
6.3 Recommended Operating Conditions
over operating ambient temperature range (unless otherwise noted)
MIN
NOM
MAX
UNIT
POWER SUPPLY
High-side power supply
Low-side power supply
ANALOG INPUT
VClipping Differential input voltage before clipping output
VDD1 to GND1
VDD2 to GND2
3
3
5
5.5
5.5
V
V
3.3
VIN = VINP – VINN
±64
mV
mV
V
VFSR
VCM
Specified linear differential full-scale voltage
Operating common-mode input voltage
VIN = VINP – VINN
–50
50
(VINP + VINN) / 2 to GND1
–0.032
VDD1 – 2.2
TEMPERATURE RANGE
TA Specified ambient temperature
–55
125
°C
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6.4 Thermal Information
AMC1202
DWV (SOIC)
8 PINS
85.4
THERMAL METRIC(1)
UNIT
RθJA
Junction-to-ambient thermal resistance
Junction-to-case (top) thermal resistance
Junction-to-board thermal resistance
°C/W
°C/W
°C/W
°C/W
°C/W
°C/W
RθJC(top)
RθJB
26.8
43.5
ψJT
Junction-to-top characterization parameter
Junction-to-board characterization parameter
Junction-to-case (bottom) thermal resistance
4.8
ψJB
41.2
RθJC(bot)
n/a
(1) For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application
report.
6.5 Power Ratings
PARAMETER
TEST CONDITIONS
VALUE
99
UNIT
PD
Maximum power dissipation (both sides) VDD1 = VDD2 = 5.5 V
mW
VDD1 = 3.6 V
Maximum power dissipation (high-side)
VDD1 = 5.5 V
31
PD1
mW
mW
54
VDD2 = 3.6 V
Maximum power dissipation (low-side)
VDD2 = 5.5 V
26
PD2
45
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UNIT
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6.6 Insulation Specifications
over operating ambient temperature range (unless otherwise noted)
PARAMETER
TEST CONDITIONS
VALUE
GENERAL
CLR
External clearance(1)
External creepage(1)
Distance through insulation
Comparative tracking index
Material group
Shortest pin-to-pin distance through air
Shortest pin-to-pin distance across the package surface
Minimum internal gap (internal clearance) of the double insulation
DIN EN 60112 (VDE 0303-11); IEC 60112
According to IEC 60664-1
≥ 8.5
≥ 8.5
≥ 0.021
≥ 600
I
mm
mm
mm
V
CPG
DTI
CTI
Rated mains voltage ≤ 600 VRMS
I-IV
Overvoltage category
per IEC 60664-1
Rated mains voltage ≤ 1000 VRMS
I-III
DIN VDE V 0884-11 (VDE V 0884-11): 2017-01(2)
Maximum repetitive peak isolation
voltage
VIORM
AC voltage
1414
VPK
AC voltage (sine wave)
1000
1414
4250
5100
VRMS
VDC
Maximum-rated isolation
working voltage
VIOWM
DC voltage
VTEST = VIOTM, t = 60 s (qualification test)
VTEST = 1.2 × VIOTM, t = 1 s (100% production test)
Maximum transient
VIOTM
VPK
VPK
isolation voltage
Maximum surge
VIOSM
Test method per IEC 60065, 1.2/50-µs waveform,
VTEST = 1.6 × VIOSM = 7800 VPK (qualification)
6000
≤ 5
≤ 5
≤ 5
≤ 5
~1
isolation voltage(3)
Method b1, at preconditioning (type test),
Vini = VIOTM, tini = 1 s, Vpd(m) = 1.5 × VIORM, tm = 1 s
Method a, after input/output safety test subgroups 2 and 3,
Vini = VIOTM, tini = 60 s, Vpd(m) = 1.2 × VIORM, tm = 10 s
qpd
Apparent charge(4)
pC
Method a, after environmental tests subgroup 1,
Vini = VIOTM, tini = 60 s, Vpd(m) = 1.2 × VIORM, tm = 10 s
Method b3, at routine test (100% production),
Vini = VIOTM = Vpd(m); tini = tm = 1 s
Barrier capacitance,
input to output(5)
CIO
VIO = 0.5 VPP at 1 MHz
pF
Ω
VIO = 500 V at TA = 25°C
> 1012
> 1011
> 109
Insulation resistance,
input to output(5)
RIO
VIO = 500 V at 100°C ≤ TA ≤ 125°C
VIO = 500 V at TS = 150°C
Pollution degree
Climatic category
2
55/125/21
UL1577
VTEST = VISO = 3000 VRMS or 4250 VDC, t = 60 s (qualification),
VTEST = 1.2 × VISO = 3600 VRMS, t = 1 s (100% production test)
VISO
Withstand isolation voltage
3000
VRMS
(1) Apply creepage and clearance requirements according to the specific equipment isolation standards of an application. Care must be
taken to maintain the creepage and clearance distance of a board design to ensure that the mounting pads of the isolator on the
printed circuit board (PCB) do not reduce this distance. Creepage and clearance on a PCB become equal in certain cases. Techniques
such as inserting grooves, ribs, or both on a PCB are used to help increase these specifications.
(2) This coupler is suitable for safe electrical insulation only within the safety ratings. Compliance with the safety ratings shall be ensured
by means of suitable protective circuits.
(3) Testing is carried out in air or oil to determine the intrinsic surge immunity of the isolation barrier.
(4) Apparent charge is electrical discharge caused by a partial discharge (pd).
(5) All pins on each side of the barrier are tied together, creating a two-pin device.
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6.7 Safety-Related Certifications
VDE
UL
Certified according to DIN VDE V 0884-11 (VDE V 0884-11): 2017-01,
DIN EN 60950-1 (VDE 0805 Teil 1): 2014-08, and
DIN EN 60065 (VDE 0860): 2005-11
Recognized under 1577 component recognition and
CSA component acceptance NO 5 programs
Basic insulation
Single protection
Certificate number: Pending
Certificate number: Pending
6.8 Safety Limiting Values
Safety limiting(1) intends to minimize potential damage to the isolation barrier upon failure of input or output circuitry. A
failure of the I/O can allow low resistance to ground or the supply and, without current limiting, dissipate sufficient power to
over-heat the die and damage the isolation barrier potentially leading to secondary system failures.
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
RθJA = 85.4°C/W, VDDx = 5.5 V,
TJ = 150°C, TA = 25°C
IS
IS
Safety input, output, or supply current
266
mA
RθJA = 85.4°C/W, VDDx = 3.6 V,
TJ = 150°C, TA = 25°C
Safety input, output, or supply current
407
mA
PS
TS
Safety input, output, or total power
Maximum safety temperature
RθJA = 85.4°C/W, TJ = 150°C, TA = 25°C
1464
150
mW
°C
(1) The maximum safety temperature, TS, has the same value as the maximum junction temperature, TJ, specified for the device. The IS
and PS parameters represent the safety current and safety power, respectively. Do not exceed the maximum limits of IS and PS. These
limits vary with the ambient temperature, TA.
The junction-to-air thermal resistance, RθJA, in the Thermal Information table is that of a device installed on a high-K test board for
leaded surface-mount packages. Use these equations to calculate the value for each parameter:
TJ = TA + RθJA × P, where P is the power dissipated in the device.
TJ(max) = TS = TA + RθJA × PS, where TJ(max) is the maximum junction temperature.
PS = IS × VDDmax, where VDDmax is the maximum supply voltage for high-side and low-side.
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6.9 Electrical Characteristics
minimum and maximum specifications apply from TA = – 55°C to +125°C, VDD1 = 3.0 V to 5.5 V, VDD2 = 3.0 V to 5.5 V, INP
= – 50 mV to + 50 mV, and INN = GND1; typical specifications are at TA = 25°C, VDD1 = 5 V, and VDD2 = 3.3 V (unless
otherwise noted)
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX UNIT
ANALOG INPUT
Common-mode overvoltage
detection level
VCMov
(VINP + VINN) / 2 to GND1
VDD1 – 2
V
Hysteresis of common-mode
overvoltage detection level
60
mV
VOS
Input offset voltage(1) (2)
Input offset drift(1) (2) (3)
TA = 25°C, VINP = VINN = GND1
–50
±2.5
±0.15
–100
–98
4
50
µV
TCVOS
–0.8
0.8 µV/°C
fIN = 0 Hz, VCM min ≤ VCM ≤ VVCM max
fIN = 10 kHz, VCM min ≤ VCM ≤ VCM max
INN = GND1, fIN = 300 kHz
fIN = 300 kHz
CMRR
Common-mode rejection ratio
dB
CIN
Single-ended input capacitance
Differential input capacitance
Single-ended input resistance
Differential input resistance
Input bias current
pF
kΩ
CIND
RIN
2
INN = GND1
4.75
4.9
RIND
IIB
INP = INN = GND1; IIB = (IIBP + IIBN) / 2
–48.5
–36
±1.5
±10
–28.5
uA
nA/°C
nA
TCIIB
IIO
Input bias current drift
Input offset current
IIO = IIBP – IIBN
ANALOG OUTPUT
Nominal gain
41
±0.04%
±3
EG
Gain error(1)
TA = 25°C
–0.2%
–35
0.2%
35 ppm/°C
0.03%
TCEG
Gain error drift(1) (4)
Nonlinearity(1)
–0.03%
±0.01%
1
Nonlinearity drift
Total harmonic distortion
ppm/°C
dB
THD
SNR
fIN = 10 kHz
–85
INP = INN = GND1, fIN = 0 Hz,
BW = 100 kHz brickwall filter
Output noise
260
µVRMS
dB
fIN = 1 kHz, BW = 10 kHz
fIN = 10 kHz, BW = 100 kHz
PSRR vs VDD1, at DC
80
84
70
Signal-to-noise ratio
–113
PSRR vs VDD1,
100-mV and 10-kHz ripple
–108
–116
–87
PSRR
Power-supply rejection ratio(2)
dB
PSRR vs VDD2, at DC
PSRR vs VDD2,
100-mV and 10-kHz ripple
VCMout
Common-mode output voltage
1.39
1.44
1.49
2.52
V
V
VOUT = (VOUTP – VOUTN);
|VIN| = |VINP – VINN| > |VClipping
VCLIPout
Clipping differential output voltage
–2.52
±2.49
|
VFailsafe
BW
Failsafe differential output voltage
Output bandwidth
VCM ≥ VCMov, or VDD1 missing
–2.63
220
–2.57
280
–2.53
V
kHz
Ω
ROUT
Output resistance
On OUTP or OUTN
< 0.2
On OUTP or OUTN, sourcing or sinking,
INN = INP = GND1, outputs shorted to
either GND2 or VDD2
Output short-circuit current
±14
150
mA
CMTI
Common-mode transient immunity |GND1 – GND2| = 1 kV
100
kV/µs
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6.9 Electrical Characteristics (continued)
minimum and maximum specifications apply from TA = – 55°C to +125°C, VDD1 = 3.0 V to 5.5 V, VDD2 = 3.0 V to 5.5 V, INP
= – 50 mV to + 50 mV, and INN = GND1; typical specifications are at TA = 25°C, VDD1 = 5 V, and VDD2 = 3.3 V (unless
otherwise noted)
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX UNIT
POWER SUPPLY
VDD1 power-on-reset threshold
voltage
VDD1POR
IDD1
VDD1 falling
2.4
2.6
2.8
V
3.0 V ≤ VDD1 ≤ 3.6 V
4.5 V ≤ VDD1 ≤ 5.5 V
3.0 V ≤ VDD2 ≤ 3.6 V
4.5 V ≤ VDD2 ≤ 5.5 V
6.2
7.2
5.3
5.9
8.5
9.8
7.2
8.1
High-side supply current
Low-side supply current
mA
IDD2
(1) The typical value includes one standard deviation ("sigma") at nominal operating conditions.
(2) This parameter is input referred.
(3) Offset error temperature drift is calculated using the box method, as described by the following equation:
TCVOS = (ValueMAX - ValueMIN) / TempRange
(4) Gain error temperature drift is calculated using the box method, as described by the following equation:
TCEG (ppm) = (ValueMAX - ValueMIN) / (Value(T=25℃) x TempRange) x 106
6.10 Switching Characteristics
over operating free-air temperature range (unless otherwise noted)
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
µs
tr
tf
Output signal rise time
1.5
1.5
1
Output signal fall time
µs
VINx to VOUTx signal delay (50% – 10%)
VINx to VOUTx signal delay (50% – 50%)
VINx to VOUTx signal delay (50% – 90%)
unfiltered output
1.5
2.1
3
µs
unfiltered output
unfiltered output
1.6
2.5
µs
µs
VDD1 step to 3.0 V with VDD2 ≥ 3.0 V, to
OUTP and OUTN valid, 0.1% settling
tAS
Analog settling time
500
µs
6.11 Timing Diagram
50 mV
0
INP - INN
– 50 mV
tf
tr
OUTN
OUTP
VCMout
50% - 10%
50% - 50%
50% - 90%
图 6-1. Rise, Fall, and Delay Time Waveforms
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6.12 Insulation Characteristics Curves
450
1600
1400
1200
1000
800
600
400
200
0
VDD1 = VDD2 = 3.6 V
VDD1 = VDD2 = 5.5 V
400
350
300
250
200
150
100
50
0
0
25
50
75
TA (°C)
100
125
150
0
25
50
75
TA (°C)
100
125
150
D002
D001
图 6-3. Thermal Derating Curve for Safety-Limiting Power per
图 6-2. Thermal Derating Curve for Safety-Limiting Current per
VDE
VDE
TA up to 150°C, stress-voltage frequency = 60 Hz, isolation working voltage = 1000 VRMS, operating lifetime = 676 years
图 6-4. Basic Isolation Capacitor Lifetime Projection
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6.13 Typical Characteristics
at TA = 25°C, VDD1 = 5 V, VDD2 = 3.3 V, INP = –50 mV to 50 mV, INN = GND1, and fIN = 10 kHz (unless otherwise noted)
3.8
3.4
3
3.3
3.25
3.2
3.15
3.1
2.6
2.2
1.8
1.4
1
3.05
3
2.95
2.9
-55 -40 -25 -10
5
20 35 50 65 80 95 110 125
Temperature (èC)
3
3.25 3.5 3.75
4
4.25 4.5 4.75
VDD1 (V)
5
5.25 5.5
D004
D003
图 6-6. Common-Mode Overvoltage Detection Level vs
图 6-5. Common-Mode Overvoltage Detection Level vs High-
Temperature
Side Supply Voltage
100
100
vs VDD1
vs VDD2
Device 1
Device 2
Device 3
75
50
75
50
25
25
0
0
-25
-50
-75
-100
-25
-50
-75
-100
3
3.25 3.5 3.75
4
4.25 4.5 4.75
VDDx (V)
5
5.25 5.5
-55 -40 -25 -10
5
20 35 50 65 80 95 110 125
Temperature (°C)
D007
D009
图 6-7. Input Offset Voltage vs Supply Voltage
图 6-8. Input Offset Voltage vs Temperature
0
-20
-75
-80
-85
-40
-90
-60
-95
-100
-105
-110
-115
-80
-100
-120
0.001
0.01
0.1
1
fIN (kHz)
10
100
1000
-55 -40 -25 -10
5
20 35 50 65 80 95 110 125
Temperature (°C)
D012
D013
图 6-9. Common-Mode Rejection Ratio vs Input Frequency
图 6-10. Common-Mode Rejection Ratio vs Temperature
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6.13 Typical Characteristics (continued)
at TA = 25°C, VDD1 = 5 V, VDD2 = 3.3 V, INP = –50 mV to 50 mV, INN = GND1, and fIN = 10 kHz (unless otherwise noted)
60
40
-27
-29
-31
-33
-35
-37
-39
-41
-43
-45
20
0
-20
-40
-60
-80
-0.5
0
0.5
1
1.5
VCM (V)
2
2.5
3
3.5
3
3.25 3.5 3.75
4
4.25 4.5 4.75
VDD1 (V)
5
5.25 5.5
D014
D015
图 6-11. Input Bias Current vs Common-Mode Input Voltage
图 6-12. Input Bias Current vs High-Side Supply Voltage
-27
-29
-31
-33
-35
-37
-39
-41
-43
-45
0.3
0.2
0.1
0
-0.1
-0.2
vs VDD1
vs VDD2
-0.3
-55 -40 -25 -10
5
20 35 50 65 80 95 110 125
Temperature (°C)
3
3.25 3.5 3.75
4
4.25 4.5 4.75
VDDx (V)
5 5.25 5.5
D016
D019
图 6-13. Input Bias Current vs Temperature
图 6-14. Gain Error vs Supply Voltage
0.3
0.2
0.1
0
5
0
-5
-10
-15
-20
-25
-30
-35
-40
-0.1
-0.2
-0.3
Device 1
Device 2
Device 3
-55 -40 -25 -10
5
20 35 50 65 80 95 110 125
Temperature (°C)
0.01
0.1
1
10
100
1000
fIN (kHz)
D020
D023
图 6-15. Gain Error vs Temperature
图 6-16. Normalized Gain vs Input Frequency
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6.13 Typical Characteristics (continued)
at TA = 25°C, VDD1 = 5 V, VDD2 = 3.3 V, INP = –50 mV to 50 mV, INN = GND1, and fIN = 10 kHz (unless otherwise noted)
0°
-45°
5
4.5
4
VOUTN
VOUTP
-90°
3.5
3
-135°
-180°
-225°
-270°
-315°
-360°
2.5
2
1.5
1
0.5
0
0.01
0.1
1
10
100
1000
-70 -60 -50 -40 -30 -20 -10
0
Differential Input Voltage (mV)
10 20 30 40 50 60 70
fIN (kHz)
D024
D025
图 6-17. Output Phase vs Input Frequency
图 6-18. Output Voltage vs Input Voltage
0.03
0.02
0.01
0
0.03
0.02
0.01
0
vs VDD1
vs VDD2
-0.01
-0.02
-0.03
-0.01
-0.02
-0.03
-50 -40 -30 -20 -10
0
10
Differential Input Voltage (mV)
20
30
40
50
3
3.25 3.5 3.75
4
4.25 4.5 4.75
VDDx (V)
5
5.25 5.5
D026
D027
图 6-19. Nonlinearity vs Input Voltage
图 6-20. Nonlinearity vs Supply Voltage
0.03
0.02
0.01
0
-70
-75
vs VDD1
vs VDD2
-80
-85
-0.01
-0.02
-0.03
-90
Device 1
Device 2
Device 3
-95
-100
-55 -40 -25 -10
5
20 35 50 65 80 95 110 125
Temperature (°C)
3
3.25 3.5 3.75
4
4.25 4.5 4.75
VDDx (V)
5
5.25 5.5
D028
D029
图 6-21. Nonlinearity vs Temperature
图 6-22. Total Harmonic Distortion vs Supply Voltage
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6.13 Typical Characteristics (continued)
at TA = 25°C, VDD1 = 5 V, VDD2 = 3.3 V, INP = –50 mV to 50 mV, INN = GND1, and fIN = 10 kHz (unless otherwise noted)
-70
10
-75
-80
-85
1
-90
Device 1
Device 2
Device 3
-95
-100
0.1
0.1
-55 -40 -25 -10
5
20 35 50 65 80 95 110 125
Temperature (°C)
1
10
Frequency (kHz)
100
1000
D030
D031
图 6-23. Total Harmonic Distortion vs Temperature
图 6-24. Output Noise Density vs Frequency
75
75
74
73
72
71
70
69
68
67
66
65
vs VDD1
vs VDD2
70
65
60
55
50
45
40
35
30
0
5
10 15 20 25 30 35 40 45 50 55
|VINP - VINN| (mV)
3
3.25 3.5 3.75
4
4.25 4.5 4.75
VDDx (V)
5
5.25 5.5
D032
D033
图 6-25. Signal-to-Noise Ratio vs Input Voltage
图 6-26. Signal-to-Noise Ratio vs Supply Voltage
75
74
73
72
71
70
69
68
67
66
65
20
vs VDD2
vs VDD1
0
-20
-40
-60
-80
-100
-120
Device 1
Device 2
Device 3
0.001
0.01
0.1
1
10
Ripple Frequency (kHz)
100
1000
-55 -40 -25 -10
5
20 35 50 65 80 95 110 125
Temperature (°C)
D035
D034
图 6-28. Power-Supply Rejection Ratio vs Ripple Frequency
图 6-27. Signal-to-Noise Ratio vs Temperature
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6.13 Typical Characteristics (continued)
at TA = 25°C, VDD1 = 5 V, VDD2 = 3.3 V, INP = –50 mV to 50 mV, INN = GND1, and fIN = 10 kHz (unless otherwise noted)
1.49
1.48
1.47
1.46
1.45
1.44
1.43
1.42
1.41
1.4
1.49
1.48
1.47
1.46
1.45
1.44
1.43
1.42
1.41
1.4
1.39
1.39
3
3.25 3.5 3.75
4
4.25 4.5 4.75
VDD2 (V)
5
5.25 5.5
-55 -40 -25 -10
5
20 35 50 65 80 95 110 125
Temperature (°C)
D036
D037
图 6-29. Output Common-Mode Voltage vs Low-Side Supply
图 6-30. Output Common-Mode Voltage vs Temperature
Voltage
320
310
300
290
280
270
260
250
240
320
310
300
290
280
270
260
250
240
3
3.25 3.5 3.75
4
4.25 4.5 4.75
VDD2 (V)
5
5.25 5.5
-55 -40 -25 -10
5
20 35 50 65 80 95 110 125
Temperature (°C)
D038
D039
图 6-31. Output Bandwidth vs Low-Side Supply Voltage
图 6-32. Output Bandwidth vs Temperature
8.5
8
8.5
8
7.5
7
7.5
7
6.5
6
6.5
6
5.5
5
5.5
5
IDD1 at VDD1 = 5 V
IDD1 at VDD1 = 3.3 V
IDD2 at VDD2 = 5 V
IDD2 at VDD2 = 3.3 V
4.5
4.5
4
IDD1 vs VDD1
IDD2 vs VDD2
4
3.5
3.5
3
3.25 3.5 3.75
4
4.25 4.5 4.75
VDDx (V)
5
5.25 5.5
-55 -40 -25 -10
5
20 35 50 65 80 95 110 125
Temperature (°C)
D040
D041
图 6-33. Supply Current vs Supply Voltage
图 6-34. Supply Current vs Temperature
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6.13 Typical Characteristics (continued)
at TA = 25°C, VDD1 = 5 V, VDD2 = 3.3 V, INP = –50 mV to 50 mV, INN = GND1, and fIN = 10 kHz (unless otherwise noted)
3.8
3.4
3
3.8
3.4
3
2.6
2.2
1.8
1.4
1
2.6
2.2
1.8
1.4
1
0.6
0.2
0.6
0.2
3
3.25 3.5 3.75
4
4.25 4.5 4.75
VDD2 (V)
5
5.25 5.5
-55 -40 -25 -10
5
20 35 50 65 80 95 110 125
Temperature (°C)
D042
D043
图 6-35. Output Rise and Fall Time vs Low-Side Supply Voltage
图 6-36. Output Rise and Fall Time vs Temperature
3.8
3.8
50% - 90%
50% - 50%
50% - 10%
50% - 90%
50% - 50%
50% - 10%
3.4
3
3.4
3
2.6
2.2
1.8
1.4
1
2.6
2.2
1.8
1.4
1
0.6
0.2
0.6
0.2
3
3.25 3.5 3.75
4
4.25 4.5 4.75
VDD2 (V)
5
5.25 5.5
-55 -40 -25 -10
5
20 35 50 65 80 95 110 125
Temperature (°C)
D044
D045
图 6-37. VIN to VOUT Signal Delay vs Low-Side Supply Voltage
图 6-38. VIN to VOUT Signal Delay vs Temperature
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7 Detailed Description
7.1 Overview
The AMC1202 is a fully differential, precision, isolated amplifier. The input stage of the device consists of a
fully differential amplifier that drives a second-order, delta-sigma (ΔΣ) modulator. The modulator converts the
analog input signal into a digital bitstream that is transferred across the isolation barrier that separates the
high-side from the low-side. On the low-side, the received bitstream is processed by a fourth-order analog filter
that outputs a differential signal at the OUTP and OUTN pins that is proportional to the input signal.
The SiO2-based, capacitive isolation barrier supports a high level of magnetic field immunity, as described in the
ISO72x Digital Isolator Magnetic-Field Immunity application report. The digital modulation used in the AMC1202
to transmit data across the isolation barrier, and the isolation barrier characteristics itself, result in high reliability
and common-mode transient immunity.
7.2 Functional Block Diagram
VDD1
VDD2
OUTP
OUTN
GND2
AMC1202
Diagnostics
Analog Filter
INP
ΔΣ Modulator
INN
GND1
7.3 Feature Description
7.3.1 Analog Input
The differential amplifier input stage of the AMC1202 feeds a second-order, switched-capacitor, feed-forward
ΔΣ modulator. The gain of the differential amplifier is set by internal precision resistors with a differential input
impedance of RIND. The modulator converts the analog input signal into a bitstream that is transferred across the
isolation barrier, as described in the Isolation Channel Signal Transmission section.
There are two restrictions on the analog input signals INP and INN. First, if the input voltages VINP or VINN
exceed the range specified in the Absolute Maximum Ratings table, the input currents must be limited to the
absolute maximum value, because the electrostatic discharge (ESD) protection turns on. In addition, the linearity
and parametric performance of the device are ensured only when the analog input voltage remains within
the linear full-scale range (VFSR) and within the common-mode input voltage range (VCM) as specified in the
Recommended Operating Conditions table.
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7.3.2 Isolation Channel Signal Transmission
The AMC1202 uses an on-off keying (OOK) modulation scheme, as shown in 图 7-1, to transmit the modulator
output bitstream across the SiO2-based isolation barrier. The transmit driver (TX) shown in the Functional Block
Diagram transmits an internally-generated, high-frequency carrier across the isolation barrier to represent a
digital one and does not send a signal to represent a digital zero. The nominal frequency of the carrier used
inside the AMC1202 is 480 MHz.
The receiver (RX) on the other side of the isolation barrier recovers and demodulates the signal and provides
the input to the 4th-order analog filter. The AMC1202 transmission channel is optimized to achieve the highest
level of common-mode transient immunity (CMTI) and lowest level of radiated emissions caused by the high-
frequency carrier and RX/TX buffer switching.
Internal Clock
Modulator Bitstream
on High-side
Signal Across Isolation Barrier
Recovered Sigal
on Low-side
图 7-1. OOK-Based Modulation Scheme
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7.3.3 Analog Output
The AMC1202 offers a differential analog output comprised of the OUTP and OUTN pins. For differential input
voltages (VINP – VINN) in the range from –50 mV to 50 mV, the device provides a linear response with a
nominal gain of 41. For example, for a differential input voltage of 50 mV, the differential output voltage (VOUTP
– VOUTN) is 2.05 V. At zero input (INP shorted to INN), both pins output the same common-mode output voltage
VCMout, as specified in the Electrical Characteristics table. For absolute differential input voltages greater than
50 mV but less than 64 mV, the differential output voltage continues to increase in magnitude but with reduced
linearity performance. The outputs saturate at a differential output voltage of VCLIPout, as shown in 图 7-2, if the
differential input voltage exceeds the VClipping value.
Maximum input range before clipping (VClipping
)
Linear input range (VFSR
)
VOUTN
VCLIPout
VOUTP
VFAILSAFE
VCMout
64 mV
50 mV
64 mV
50 mV
0
Differential Input Voltage (VINP – VINN
)
图 7-2. Output Behavior of the AMC1202
The AMC1202 offers a fail-safe feature that simplifies diagnostics on system level. 图 7-2 shows the fail-safe
mode, in which the AMC1202 outputs a negative differential output voltage that does not occur under normal
operating conditions. The fail-safe output is active in two cases:
•
•
When the high-side supply is missing or below the VDD1UV threshold
When the common-mode input voltage, that is VCM = (VINP + VINN) / 2, exceeds the common-mode
overvoltage detection level VCMov
Use the maximum VFAILSAFE voltage specified in the Electrical Characteristics table as a reference value for
fail-safe detection on system level.
7.4 Device Functional Modes
The AMC1202 is operational when the power supplies VDD1 and VDD2 are applied, as specified in the
Recommended Operating Conditions table.
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8 Application and Implementation
Note
以下应用部分中的信息不属于 TI 器件规格的范围,TI 不担保其准确性和完整性。TI 的客 户应负责确定
器件是否适用于其应用。客户应验证并测试其设计,以确保系统功能。
8.1 Application Information
The low analog input voltage range, excellent accuracy, and low temperature drift make the a high-performance
solution for industrial applications where shunt-based current sensing in the presence of high common-mode
voltage levels is required.
8.2 Typical Application
The AMC1202 is ideally suited for shunt-based current sensing applications where accurate current monitoring is
required in the presence of high common-mode voltages.
图 8-1 shows the AMC1202 in a typical application. The load current flowing through an external shunt resistor
RSHUNT produces a voltage drop that is sensed by the AMC1202. The AMC1202 digitizes the analog input
signal on the high-side, transfers the data across the isolation barrier to the low-side, reconstructs the analog
signal, and presents that signal as a differential voltage on the output pins.
The differential input, differential output, and the high common-mode transient immunity (CMTI) of the AMC1202
ensure reliable and accurate operation even in high-noise environments.
Floating Gate
Driver Supply
+ DC Link
Low-side supply
(3.3 V or 5 V)
1 uF 100 nF
1 uF 100 nF
AMC1202
VDD1
VDD2
OUTP
OUTN
GND2
10
10
10 nF
INP
RSHUNT
ADC
INN
Load
GND1
– DC Link
图 8-1. Using the AMC1202 for Current Sensing in a Typical Application
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8.2.1 Design Requirements
表 8-1 lists the parameters for this typical application.
表 8-1. Design Requirements
PARAMETER
High-side supply voltage
VALUE
3.3 V or 5 V
Low-side supply voltage
3.3 V or 5 V
Voltage drop across RSHUNT for a linear response
Signal delay (50% VIN to 90% OUTP, OUTN)
±50 mV (maximum)
3 µs (maximum)
8.2.2 Detailed Design Procedure
In 图 8-1, the high-side power supply (VDD1) for the AMC1202 is derived from the floating power supply of the
upper gate driver.
The floating ground reference (GND1) is derived from the end of the shunt resistor that is connected to the
negative input of the AMC1202 (INN). If a four-pin shunt is used, the inputs of the AMC1202 are connected to
the inner leads and GND1 is connected to the outer lead on the INN-side of the shunt. To minimize offset and
improve accuracy, route the ground connection as a separate trace that connects directly to the shunt resistor
rather than shorting GND1 to INN directly at the input to the device. See the Layout section for more details.
8.2.2.1 Shunt Resistor Sizing
Use Ohm's Law to calculate the voltage drop across the shunt resistor (VSHUNT) for the desired measured
current: VSHUNT = I × RSHUNT.
Consider the following two restrictions when selecting the value of the shunt resistor, RSHUNT:
•
•
The voltage drop caused by the nominal current range must not exceed the recommended differential input
voltage range for a linear response: |VSHUNT| ≤ |VFSR
The voltage drop caused by the maximum allowed overcurrent must not exceed the input voltage that causes
a clipping output: |VSHUNT| ≤ |VClipping
|
|
8.2.2.2 Input Filter Design
TI recommends placing an RC-filter in front of the isolated amplifier to improve signal-to-noise performance of
the signal path. Design the input filter such that:
•
The cutoff frequency of the filter is at least one order of magnitude lower than the sampling frequency
(20 MHz) of the ΔΣ modulator
•
•
The input bias current does not generate significant voltage drop across the DC impedance of the input filter
The impedances measured from the analog inputs are equal
For most applications, the structure shown in 图 8-2 achieves excellent performance.
AMC1202
VDD1
VDD2
OUTP
OUTN
GND2
10
10
10 nF
INP
INN
GND1
图 8-2. Differential Input Filter
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8.2.2.3 Differential to Single-Ended Output Conversion
图 8-3 shows an example of a TLV6001-based signal conversion and filter circuit for systems using single-
ended-input ADCs to convert the analog output voltage into digital. With R1 = R2 = R3 = R4, the output voltage
equals (VOUTP – VOUTN) + VREF. Tailor the bandwidth of this filter stage to the bandwidth requirement of the
system. For most applications, R1 = R2 = R3 = R4 = 3.3 kΩ and C1 = C2 = 330 pF yields good performance.
AMC1202
VDD1
VDD2
OUTP
OUTN
GND2
10
10
10 nF
INP
INN
GND1
图 8-3. Connecting the AMC1202 Output to a Single-Ended Input ADC
For more information on the general procedure to design the filtering and driving stages of SAR ADCs, see
the 18-Bit, 1MSPS Data Acquisition Block (DAQ) Optimized for Lowest Distortion and Noise and 18-Bit Data
Acquisition Block (DAQ) Optimized for Lowest Power reference guides, available for download at www.ti.com.
8.2.3 Application Curve
One important aspect of power-stage design is the effective detection of an overcurrent condition to protect the
switching devices and passive components from damage. To power off the system quickly in the event of an
overcurrent condition, a low delay caused by the isolated amplifier is required. 图 8-4 shows the typical full-scale
step response of the AMC1202.
VOUTN
VIN
VOUTP
图 8-4. Step Response of the AMC1202
8.2.4 What to Do and What Not to Do
Do not leave the inputs of the AMC1202 unconnected (floating) when the device is powered up. If the device
inputs are left floating, the input bias current may drive the inputs to a positive value that exceeds the operating
common-mode input voltage and the device outputs the fail-safe voltage as described in the Analog Output
section.
Connect the high-side ground (GND1) to INN, either by a hard short or through a resistive path. A DC current
path between INN and GND1 is required to define the input common-mode voltage. Do not exceed the input
common-mode range as specified in the Recommended Operating Conditions table. For best accuracy, route
the ground connection as a separate trace that connects directly to the shunt resistor rather than shorting GND1
to INN directly at the input to the device. See the Layout section for more details.
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9 Power Supply Recommendations
The AMC1202 does not require any specific power up sequencing. The high-side power-supply (VDD1) is
decoupled with a low-ESR 100-nF capacitor (C1) parallel to a low-ESR 1-µF capacitor (C2). The low-side power
supply (VDD2) is equally decoupled with a low-ESR 100-nF capacitor (C3) parallel to a low-ESR 1-µF capacitor
(C4). Place all four capacitors (C1, C2, C3, and C4) as close to the device as possible.
The ground reference for the high-side (GND1) is derived from the end of the shunt resistor, which is connected
to the negative input (INN) of the device. For best DC accuracy, use a separate trace (as shown in 图 9-1)
to make this connection instead of shorting GND1 to INN directly at the device input. If a four-terminal shunt
is used, the device inputs are connected to the inner leads and GND1 is connected to the outer lead on the
INN-side of the shunt.
INP
VDD1
VDD2
C2 1 µF
C1 100 nF
R2 10
C4 1 µF
AMC1202
I
C3 100 nF
VDD1
VDD2
OUTP
OUTN
GND2
INP
to RC filter / ADC
to RC filter / ADC
C5
10 nF
R1 10
INN
GND1
图 9-1. Decoupling of the AMC1202
Capacitors must provide adequate effective capacitance under the applicable DC bias conditions they
experience in the application. Multilayer ceramic capacitors (MLCCs) typically exhibit only a fraction of their
nominal capacitance under real-world conditions and this factor must be taken into consideration when selecting
these capacitors. This problem is especially acute in low-profile capacitors, in which the dielectric field strength is
higher than in taller components. Reputable capacitor manufacturers provide capacitance versus DC bias curves
that greatly simplify component selection.
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10 Layout
10.1 Layout Guidelines
图 10-1 shows a layout recommendation with the critical placement of the decoupling capacitors (as close as
possible to the AMC1202 supply pins) and placement of the other components required by the device. For best
performance, place the shunt resistor close to the INP and INN inputs of the AMC1202 and keep the layout of
both connections symmetrical.
10.2 Layout Example
Clearance area, to be
kept free of any
conductive materials.
C2
C1
C4
C3
INP
R2
R1
to RC filter / ADC
to RC filter / ADC
OUTP
OUTN
AMC1202
INN
GND2
GND1
Top Metal
Inner or Bottom Layer Metal
Via
图 10-1. Recommended Layout of the AMC1202
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11 Device and Documentation Support
11.1 Documentation Support
11.1.1 Related Documentation
For related documentation, see the following:
•
•
•
•
Texas Instruments, Isolation Glossary application report
Texas Instruments, Semiconductor and IC Package Thermal Metrics application report
Texas Instruments, ISO72x Digital Isolator Magnetic-Field Immunity application report
Texas Instruments, TLV600x Low-Power, Rail-to-Rail In/Out, 1-MHz Operational Amplifier for Cost-Sensitive
Systems data sheet
•
•
•
Texas Instruments, 18-Bit, 1-MSPS Data Acquisition Block (DAQ) Optimized for Lowest Distortion and Noise
reference guide
Texas Instruments, 18-Bit, 1-MSPS Data Acquisition Block (DAQ) Optimized for Lowest Power reference
guide
Texas Instruments, Isolated Amplifier Voltage Sensing Excel Calculator design tool
11.2 Trademarks
所有商标均为其各自所有者的财产。
11.3 Electrostatic Discharge Caution
This integrated circuit can be damaged by ESD. Texas Instruments recommends that all integrated circuits be handled
with appropriate precautions. Failure to observe proper handling and installation procedures can cause damage.
ESD damage can range from subtle performance degradation to complete device failure. Precision integrated circuits may
be more susceptible to damage because very small parametric changes could cause the device not to meet its published
specifications.
11.4 术语表
TI 术语表
本术语表列出并解释了术语、首字母缩略词和定义。
12 Mechanical, Packaging, and Orderable Information
The following pages include mechanical, packaging, and orderable information. This information is the most
current data available for the designated devices. This data is subject to change without notice and revision of
this document. For browser-based versions of this data sheet, refer to the left-hand navigation.
Copyright © 2021 Texas Instruments Incorporated
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25
Product Folder Links: AMC1202
重要声明和免责声明
TI 提供技术和可靠性数据(包括数据表)、设计资源(包括参考设计)、应用或其他设计建议、网络工具、安全信息和其他资源,不保证没
有瑕疵且不做出任何明示或暗示的担保,包括但不限于对适销性、某特定用途方面的适用性或不侵犯任何第三方知识产权的暗示担保。
这些资源可供使用 TI 产品进行设计的熟练开发人员使用。您将自行承担以下全部责任:(1) 针对您的应用选择合适的 TI 产品,(2) 设计、验
证并测试您的应用,(3) 确保您的应用满足相应标准以及任何其他安全、安保或其他要求。这些资源如有变更,恕不另行通知。TI 授权您仅可
将这些资源用于研发本资源所述的 TI 产品的应用。严禁对这些资源进行其他复制或展示。您无权使用任何其他 TI 知识产权或任何第三方知
识产权。您应全额赔偿因在这些资源的使用中对 TI 及其代表造成的任何索赔、损害、成本、损失和债务,TI 对此概不负责。
TI 提供的产品受 TI 的销售条款 (https:www.ti.com/legal/termsofsale.html) 或 ti.com 上其他适用条款/TI 产品随附的其他适用条款的约束。TI
提供这些资源并不会扩展或以其他方式更改 TI 针对 TI 产品发布的适用的担保或担保免责声明。重要声明
邮寄地址:Texas Instruments, Post Office Box 655303, Dallas, Texas 75265
Copyright © 2021,德州仪器 (TI) 公司
PACKAGE OPTION ADDENDUM
www.ti.com
16-Mar-2023
PACKAGING INFORMATION
Orderable Device
Status Package Type Package Pins Package
Eco Plan
Lead finish/
Ball material
MSL Peak Temp
Op Temp (°C)
Device Marking
Samples
Drawing
Qty
(1)
(2)
(3)
(4/5)
(6)
AMC1202DWVR
ACTIVE
SOIC
DWV
8
1000 RoHS & Green
NIPDAU
Level-3-260C-168 HR
-40 to 125
AMC1202
Samples
(1) The marketing status values are defined as follows:
ACTIVE: Product device recommended for new designs.
LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect.
NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design.
PREVIEW: Device has been announced but is not in production. Samples may or may not be available.
OBSOLETE: TI has discontinued the production of the device.
(2) RoHS: TI defines "RoHS" to mean semiconductor products that are compliant with the current EU RoHS requirements for all 10 RoHS substances, including the requirement that RoHS substance
do not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, "RoHS" products are suitable for use in specified lead-free processes. TI may
reference these types of products as "Pb-Free".
RoHS Exempt: TI defines "RoHS Exempt" to mean products that contain lead but are compliant with EU RoHS pursuant to a specific EU RoHS exemption.
Green: TI defines "Green" to mean the content of Chlorine (Cl) and Bromine (Br) based flame retardants meet JS709B low halogen requirements of <=1000ppm threshold. Antimony trioxide based
flame retardants must also meet the <=1000ppm threshold requirement.
(3) MSL, Peak Temp. - The Moisture Sensitivity Level rating according to the JEDEC industry standard classifications, and peak solder temperature.
(4) There may be additional marking, which relates to the logo, the lot trace code information, or the environmental category on the device.
(5) Multiple Device Markings will be inside parentheses. Only one Device Marking contained in parentheses and separated by a "~" will appear on a device. If a line is indented then it is a continuation
of the previous line and the two combined represent the entire Device Marking for that device.
(6)
Lead finish/Ball material - Orderable Devices may have multiple material finish options. Finish options are separated by a vertical ruled line. Lead finish/Ball material values may wrap to two
lines if the finish value exceeds the maximum column width.
Important Information and Disclaimer:The information provided on this page represents TI's knowledge and belief as of the date that it is provided. TI bases its knowledge and belief on information
provided by third parties, and makes no representation or warranty as to the accuracy of such information. Efforts are underway to better integrate information from third parties. TI has taken and
continues to take reasonable steps to provide representative and accurate information but may not have conducted destructive testing or chemical analysis on incoming materials and chemicals.
TI and TI suppliers consider certain information to be proprietary, and thus CAS numbers and other limited information may not be available for release.
In no event shall TI's liability arising out of such information exceed the total purchase price of the TI part(s) at issue in this document sold by TI to Customer on an annual basis.
Addendum-Page 1
PACKAGE MATERIALS INFORMATION
www.ti.com
16-Mar-2023
TAPE AND REEL INFORMATION
REEL DIMENSIONS
TAPE DIMENSIONS
K0
P1
W
B0
Reel
Diameter
Cavity
A0
A0 Dimension designed to accommodate the component width
B0 Dimension designed to accommodate the component length
K0 Dimension designed to accommodate the component thickness
Overall width of the carrier tape
W
P1 Pitch between successive cavity centers
Reel Width (W1)
QUADRANT ASSIGNMENTS FOR PIN 1 ORIENTATION IN TAPE
Sprocket Holes
Q1 Q2
Q3 Q4
Q1 Q2
Q3 Q4
User Direction of Feed
Pocket Quadrants
*All dimensions are nominal
Device
Package Package Pins
Type Drawing
SPQ
Reel
Reel
A0
B0
K0
P1
W
Pin1
Diameter Width (mm) (mm) (mm) (mm) (mm) Quadrant
(mm) W1 (mm)
AMC1202DWVR
SOIC
DWV
8
1000
330.0
16.4
12.05 6.15
3.3
16.0
16.0
Q1
Pack Materials-Page 1
PACKAGE MATERIALS INFORMATION
www.ti.com
16-Mar-2023
TAPE AND REEL BOX DIMENSIONS
Width (mm)
H
W
L
*All dimensions are nominal
Device
Package Type Package Drawing Pins
SOIC DWV
SPQ
Length (mm) Width (mm) Height (mm)
350.0 350.0 43.0
AMC1202DWVR
8
1000
Pack Materials-Page 2
PACKAGE OUTLINE
DWV0008A
SOIC - 2.8 mm max height
S
C
A
L
E
2
.
0
0
0
SOIC
C
SEATING PLANE
11.5 0.25
TYP
PIN 1 ID
AREA
0.1 C
6X 1.27
8
1
2X
5.95
5.75
NOTE 3
3.81
4
5
0.51
0.31
8X
7.6
7.4
0.25
C A
B
A
B
2.8 MAX
NOTE 4
0.33
0.13
TYP
SEE DETAIL A
(2.286)
0.25
GAGE PLANE
0.46
0.36
0 -8
1.0
0.5
DETAIL A
TYPICAL
(2)
4218796/A 09/2013
NOTES:
1. All linear dimensions are in millimeters. Dimensions in parenthesis are for reference only. Dimensioning and tolerancing
per ASME Y14.5M.
2. This drawing is subject to change without notice.
3. This dimension does not include mold flash, protrusions, or gate burrs. Mold flash, protrusions, or gate burrs shall not
exceed 0.15 mm, per side.
4. This dimension does not include interlead flash. Interlead flash shall not exceed 0.25 mm, per side.
www.ti.com
EXAMPLE BOARD LAYOUT
DWV0008A
SOIC - 2.8 mm max height
SOIC
8X (1.8)
SEE DETAILS
SYMM
SYMM
8X (0.6)
6X (1.27)
(10.9)
LAND PATTERN EXAMPLE
9.1 mm NOMINAL CLEARANCE/CREEPAGE
SCALE:6X
SOLDER MASK
OPENING
SOLDER MASK
OPENING
METAL
METAL
0.07 MAX
ALL AROUND
0.07 MIN
ALL AROUND
SOLDER MASK
DEFINED
NON SOLDER MASK
DEFINED
SOLDER MASK DETAILS
4218796/A 09/2013
NOTES: (continued)
5. Publication IPC-7351 may have alternate designs.
6. Solder mask tolerances between and around signal pads can vary based on board fabrication site.
www.ti.com
EXAMPLE STENCIL DESIGN
DWV0008A
SOIC - 2.8 mm max height
SOIC
SYMM
8X (1.8)
8X (0.6)
SYMM
6X (1.27)
(10.9)
SOLDER PASTE EXAMPLE
BASED ON 0.125 mm THICK STENCIL
SCALE:6X
4218796/A 09/2013
NOTES: (continued)
7. Laser cutting apertures with trapezoidal walls and rounded corners may offer better paste release. IPC-7525 may have alternate
design recommendations.
8. Board assembly site may have different recommendations for stencil design.
www.ti.com
重要声明和免责声明
TI“按原样”提供技术和可靠性数据(包括数据表)、设计资源(包括参考设计)、应用或其他设计建议、网络工具、安全信息和其他资源,
不保证没有瑕疵且不做出任何明示或暗示的担保,包括但不限于对适销性、某特定用途方面的适用性或不侵犯任何第三方知识产权的暗示担
保。
这些资源可供使用 TI 产品进行设计的熟练开发人员使用。您将自行承担以下全部责任:(1) 针对您的应用选择合适的 TI 产品,(2) 设计、验
证并测试您的应用,(3) 确保您的应用满足相应标准以及任何其他功能安全、信息安全、监管或其他要求。
这些资源如有变更,恕不另行通知。TI 授权您仅可将这些资源用于研发本资源所述的 TI 产品的应用。严禁对这些资源进行其他复制或展示。
您无权使用任何其他 TI 知识产权或任何第三方知识产权。您应全额赔偿因在这些资源的使用中对 TI 及其代表造成的任何索赔、损害、成
本、损失和债务,TI 对此概不负责。
TI 提供的产品受 TI 的销售条款或 ti.com 上其他适用条款/TI 产品随附的其他适用条款的约束。TI 提供这些资源并不会扩展或以其他方式更改
TI 针对 TI 产品发布的适用的担保或担保免责声明。
TI 反对并拒绝您可能提出的任何其他或不同的条款。IMPORTANT NOTICE
邮寄地址:Texas Instruments, Post Office Box 655303, Dallas, Texas 75265
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