BQ2004E [TI]

Fast-Charge ICs; 快速充电芯片
BQ2004E
型号: BQ2004E
厂家: TEXAS INSTRUMENTS    TEXAS INSTRUMENTS
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Fast-Charge ICs
快速充电芯片

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bq2004E/H  
Fast-Charge ICs  
ture and voltage are within config-  
ured limits.  
Features  
General Description  
Fast charge and conditioning of  
nickel cadmium or nickel-metal  
hydride batteries  
The bq2004E and bq2004H Fast  
Charge ICs provide comprehensive  
fast charge control functions together  
with high-speed switching power con-  
trol circuitry on a monolithic CMOS  
device.  
Temperature, voltage, and time are  
monitored throughout fast charge.  
Fast charge is terminated by any of  
the following:  
Hysteretic PWM switch-mode  
current regulation or gated con-  
trol of an external regulator  
n
Rate of temperature rise  
(T/t)  
Integration of closed-loop current  
control circuitry allows the bq2004  
to be the basis of a cost-effective so-  
lution for stand-alone and system-  
integrated chargers for batteries of  
one or more cells.  
Easily integrated into systems or  
n
n
n
n
n
Peak voltage detection (PVD)  
Negative delta voltage (-V)  
Maximum voltage  
used as a stand-alone charger  
Pre-charge qualification of tem-  
perature and voltage  
Maximum temperature  
Maximum time  
Configurable, direct LED outputs  
Switch-activated discharge-before-  
charge allows bq2004E/H-based charg-  
ers to support battery conditioning  
and capacity determination.  
display battery and charge status  
Fast-charge termination by tem-  
perature/time, peak volume de-  
tection, -V, maximum voltage,  
maximum temperature, and maxi-  
mum time  
After fast charge, optional top-off  
and pulsed current maintenance  
phases with appropriate display  
mode selections are available.  
High-efficiency power conversion is  
accomplished using the bq2004E/H as  
a hysteretic PWM controller for  
switch-mode regulation of the charg-  
ing current. The bq2004E/H may al-  
ternatively be used to gate an exter-  
nally regulated charging current.  
The bq2004H differs from the  
bq2004E only in that fast charge,  
hold-off, and top-off time units have  
been scaled up by a factor of two,  
and the bq2004H provides different  
display selections. Timing differ-  
ences between the two ICs are illus-  
trated in Table 1. Display differ-  
ences are shown in Table 2.  
Optional top-off charge and  
pulsed current maintenance  
charging  
Logic-level controlled low-power  
mode (< 5µA standby current)  
Fast charge may begin on application  
of the charging supply, replacement  
of the battery, or switch depression.  
For safety, fast charge is inhibited  
unless/until the battery tempera-  
Pin Connections  
Pin Names  
SNS  
LED1  
LED2  
VSS  
Sense resistor input  
Charge status output 1  
Charge status output 2  
System ground  
DCMD  
DSEL  
VSEL  
Discharge command  
Display select  
DCMD  
DSEL  
VSEL  
1
2
3
4
5
6
16  
15  
14  
13  
12  
11  
INH  
Voltage termination  
select  
DIS  
MOD  
TM1  
TM2  
TCO  
TS  
Timer mode select 1  
Timer mode select 2  
Temperature cutoff  
Temperature sense  
Battery voltage  
TM  
TM  
V
1
CC  
SS  
VCC  
5.0V 10% power  
V
2
MOD  
DIS  
Charge current control  
TCO  
LED  
LED  
2
TS  
7
8
10  
9
Discharge control  
output  
1
BAT  
SNS  
INH  
Charge inhibit input  
BAT  
16-Pin Narrow DIP  
or Narrow SOIC  
PN2004E01.eps  
6/99 E  
1
bq2004E/H  
Charging current sense input  
SNS  
Pin Descriptions  
SNS controls the switching of MOD based on  
an external sense resistor in the current  
path of the battery. SNS is the reference po-  
tential for both the TS and BAT pins. If  
SNS is connected to VSS, then MOD switches  
high at the beginning of charge and low at  
the end of charge.  
Discharge-before-charge control input  
DCMD  
The DCMD input controls the conditions  
that enable discharge-before-charge. DCMD  
is pulled up internally. A negative-going  
pulse on DCMD initiates a discharge to end-  
of-discharge voltage (EDV) on the BAT pin,  
followed by a new charge cycle start. Tying  
DCMD to ground enables automatic  
discharge-before-charge on every new charge  
cycle start.  
Charge status outputs  
LED1–  
LED2  
Push-pull outputs indicating charging  
status. See Table 2.  
Display select input  
DSEL  
VSEL  
Ground  
Vss  
VCC  
This three-state input configures the charge  
status display mode of the LED1 and LED2 out-  
puts and can be used to disable top-off and  
pulsed-trickle. See Table 2.  
VCC supply input  
5.0V, 10% power input.  
Charge current control output  
MOD  
Voltage termination select input  
MOD is a push-pull output that is used to  
control the charging current to the battery.  
MOD switches high to enable charging cur-  
rent to flow and low to inhibit charging  
current flow.  
This three-state input controls the voltage-  
termination technique used by the  
bq2004E/H. When high, PVD is active.  
When floating, -V is used. When pulled low,  
both PVD and -V are disabled.  
Discharge control output  
DIS  
Timer mode inputs  
TM1–  
TM2  
Push-pull output used to control an external  
transistor to discharge the battery before  
charging.  
TM1 and TM2 are three-state inputs that  
configure the fast charge safety timer, voltage  
termination hold-off time, “top-off”, and  
trickle charge control. See Table 1.  
Charge inhibit input  
INH  
When low, the bq2004E/H suspends all  
charge actions, drives all outputs to high im-  
pedance, and assumes a low-power opera-  
tional state. When transitioning from low to  
high, a new charge cycle is started.  
Temperature cut-off threshold input  
TCO  
Input to set maximum allowable battery  
temperature. If the potential between TS  
and SNS is less than the voltage at the TCO  
input, then fast charge or top-off charge is ter-  
minated.  
Temperature sense input  
TS  
Input, referenced to SNS, for an external  
thermister monitoring battery temperature.  
Battery voltage input  
BAT  
BAT is the battery voltage sense input, refer-  
enced to SNS. This is created by a high-  
impedance resistor-divider network con-  
nected between the positive and the negative  
terminals of the battery.  
2
bq2004E/H  
Functional Description  
Discharge-Before-Charge  
Figure 2 shows a block diagram and Figure 3 shows a  
state diagram of the bq2004E/H.  
The DCMD input is used to command discharge-before-  
charge via the DIS output. Once activated, DIS becomes  
active (high) until VCELL falls below VEDV, at which time  
DIS goes low and a new fast charge cycle begins.  
Battery Voltage and Temperature  
Measurements  
The DCMD input is internally pulled up to VCC (its inac-  
tive state). Leaving the input unconnected, therefore,  
results in disabling discharge-before-charge. A negative  
going pulse on DCMD initiates discharge-before-charge  
at any time regardless of the current state of the  
bq2004. If DCMD is tied to VSS, discharge-before-charge  
will be the first step in all newly started charge cycles.  
Battery voltage and temperature are monitored for  
maximum allowable values. The voltage presented on  
the battery sense input, BAT, should represent a  
two-cell potential for the battery under charge.  
resistor-divider ratio of:  
A
RB1  
RB2  
N
2
=
- 1  
Starting A Charge Cycle  
is recommended to maintain the battery voltage within  
the valid range, where N is the number of cells, RB1 is  
the resistor connected to the positive battery terminal,  
and RB2 is the resistor connected to the negative bat-  
tery terminal. See Figure 1.  
A new charge cycle is started by:  
1. Application of VCC power.  
2. VCELL falling through the maximum cell voltage,  
V
MCV where:  
Note: This resistor-divider network input impedance to  
end-to-end should be at least 200kand less than 1M.  
VMCV = 0.8 VCC 30mV  
3. A transition on the INH input from low to high.  
A ground-referenced negative temperature coefficient ther-  
mistor placed in proximity to the battery may be used as a  
low-cost temperature-to-voltage transducer. The tempera-  
ture sense voltage input at TS is developed using a  
If DCMD is tied low, a discharge-before-charge will be  
executed as the first step of the new charge cycle. Oth-  
erwise, pre-charge qualification testing will be the first  
step.  
resistor-thermistor network between VCC and VSS  
. See  
Figure 1. Both the BAT and TS inputs are referenced to  
SNS, so the signals used inside the IC are:  
The battery must be within the configured temperature  
and voltage limits before fast charging begins.  
V
BAT - VSNS = VCELL  
and  
The valid battery voltage range is VEDV < VBAT < VMCV  
where:  
VTS - VSNS = VTEMP  
VEDV = 0.4 VCC 30mV  
Negative Temperature  
Coefficient Thermister  
V
CC  
PACK +  
RT1  
PACK+  
PACK-  
T
S
RB1  
bq2004E/H  
N
T
C
bq2004E/H  
RT2  
BAT  
RB2  
SNS  
PACK -  
SNS  
Fg2004a.eps  
Figure 1. Voltage and Temperature Monitoring  
3
bq2004E/H  
TM1 TM2  
TCO  
Timing  
Control  
TCO  
Check  
TS  
OSC  
LED1  
LED2  
DSEL  
LTF  
Check  
Display  
Control  
V
- V  
TS SNS  
A/D  
SNS  
BAT  
V
- V  
BAT SNS  
DCMD  
DVEN  
Charge Control  
State Machine  
EDV  
Check  
MOD  
Control  
PWR  
Control  
MCV  
Check  
Discharge  
Control  
DIS  
MOD  
INH  
V
V
CC SS  
BD200401.eps  
Figure 2. Block Diagram  
Fast charge continues until termination by one or more  
of the six possible termination conditions:  
The valid temperature range is VHTF < VTEMP < VLTF  
,
where:  
n
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n
n
n
n
Delta temperature/delta time (T/t)  
Peak voltage detection (PVD)  
Negative delta voltage (-V)  
Maximum voltage  
VLTF = 0.4 VCC 30mV  
VHTF = [(1/3 VLTF) + (2/3 VTCO)] 30mV  
V
TCO is the voltage presented at the TCO input pin, and is  
configured by the user with a resistor divider between VCC  
and ground. The allowed range is 0.2 to 0.4 VCC  
.
Maximum temperature  
Maximum time  
If the temperature of the battery is out of range, or the  
voltage is too low, the chip enters the charge pending  
state and waits for both conditions to fall within their al-  
lowed limits. During the charge-pending mode, the IC  
first applies a top-off charge to the battery.  
PVD and -V Termination  
The bq2004E/H samples the voltage at the BAT pin once  
every 34s. When -V termination is selected, if VCELL is  
lower than any previously measured value by 12mV  
4mV (6mV/cell), fast charge is terminated. When PVD  
termination is selected, if VCELL is lower than any previ-  
ously measured value by 6mV 2mV (3mV/cell), fast  
charge is terminated. The PVD and -V tests are valid  
The top-off charge, at the rate of 1 8 of the fast charge,  
continues until the fast-charge conditions are met or the  
top-off time-out period is exceeded. The IC then trickle  
charges until the fast-charge conditions are met. There  
is no time limit on the charge pending state; the charger  
remains in this state as long as the voltage or tempera-  
ture conditons are outside of the allowed limits. If the  
voltage is too high, the chip goes to the battery absent  
state and waits until a new charge cycle is started.  
in the range 0.4 VCC < VCELL < 0.8 VCC  
.
4
bq2004E/H  
VSEL Input  
Low  
Voltage Termination  
T/t Termination  
Disabled  
-V  
PVD  
The bq2004E/H samples at the voltage at the TS pin  
every 34s, and compares it to the value measured two  
samples earlier. If VTEMP has fallen 16mV 4mV or  
more, fast charge is terminated. The T/t termination  
Float  
High  
test is valid only when VTCO < VTEMP < VLTF  
.
Voltage Sampling  
Temperature Sampling  
Each sample is an average of voltage measurements.  
The IC takes 32 measurements in PVD mode and 16  
measurements in -V mode. The resulting sample peri-  
ods (9.17ms and 18.18ms, respectively) filter out har-  
monics centered around 55Hz and 109Hz. This tech-  
nique minimizes the effect of any AC line ripple that  
may feed through the power supply from either 50Hz or  
60Hz AC sources. Tolerance on all timing is 16%.  
Each sample is an average of 16 voltage measurements.  
The resulting sample period (18.18ms) filters out har-  
monics around 55Hz. This technique minimizes the ef-  
fect of any AC line ripple that may feed through the  
power supply from either 50Hz or 60Hz AC sources. Tol-  
erance on all timing is 16%.  
Maximum Voltage, Temperature, and Time  
Temperature and Voltage Termination  
Hold-off  
Anytime VCELL rises above VMCV, the LEDs go off and cur-  
rent flow into the battery ceases immediately. If VCELL  
A hold-off period occurs at the start of fast charging. then falls back below VMCV before tMCV = 1.5s 0.5s, the  
chip transitions to the Charge Complete state (maximum  
voltage termination). If VCELL remains above VMCV at the  
expiration of tMCV, the bq2004E/H transitions to the Bat-  
tery Absent state (battery removal). See Figure 3.  
During the hold-off period, -V and T/t termination  
are disabled. The MOD pin is enabled at a duty cycle of  
260µs active for every 1820µs inactive. This modulation  
results in an average rate 1/8th that of the fast charge  
rate. This avoids premature termination on the voltage  
spikes sometimes produced by older batteries when  
fast-charge current is first applied. Maximum voltage  
and maximum temperature terminations are not af-  
fected by the hold-off period.  
Maximum temperature termination occurs anytime  
VTEMP falls below the temperature cutoff threshold  
V
TCO. Charge will also be terminated if VTEMP rises  
above the low temperature fault threshold, VLTF, after  
fast charge begins.  
Table 1. Fast Charge Safety Time/Hold-Off/Top-Off Table  
Typical  
Fast-Charge  
Safety  
Typical  
Corresponding  
Fast-Charge  
Rate  
PVD, -V  
Hold-Off  
Time (s)  
Pulse-  
Trickle  
Top-Off  
Rate  
Pulse-  
Trickle  
Rate  
Time (min)  
Period (Hz)  
2004E 2004H  
2004E 2004H 2004E 2004H 2004E 2004H  
2004E 2004H  
TM1 TM2  
Low Low  
C/4  
C/2  
1C  
2C  
4C  
C/2  
1C  
2C  
4C  
C/8  
C/4  
C/2  
1C  
325  
154  
77  
650  
325  
154  
77  
137  
546  
273  
137  
68  
273  
546  
546  
273  
137  
546  
546  
273  
137  
Disabled  
Disabled  
Disabled  
Disabled  
Disabled  
Disabled  
C/512  
C/512  
C/512  
C/512  
C/512  
C/512  
C/512  
C/512  
Disabled  
Float Low  
High Low  
Low Float  
Float Float  
High Float  
Low High  
Float High  
High High  
15  
7.5  
30  
15  
39  
3.75  
1.88  
15  
7.5  
3.75  
30  
2C  
19  
39  
C/4  
C/2  
1C  
154  
77  
325  
154  
77  
546  
273  
137  
68  
C/16  
C/32  
C/16  
C/18  
C/4  
C/8  
C/4  
C/2  
7.5  
15  
39  
3.75  
1.88  
7.5  
3.75  
2C  
19  
39  
Note: Typical conditions = 25°C, VCC = 5.0V.  
5
bq2004E/H  
Table 2. bq2004E/H LED Output Summary  
Mode 1  
bq2004E  
Charge Action State  
LED1  
Low  
LED2  
Low  
Battery absent  
Fast charge pending or a discharge-before-charge in progress  
Fast charging  
High  
Low  
High  
High  
Low  
DSEL = VSS  
Fast charge complete, top-off, and/or trickle  
High  
Mode 1  
bq2004H  
Charge Action State  
Battery absent  
LED1  
Low  
LED2  
Low  
Discharge-before-charge in progress  
High  
High  
1
8 second high  
DSEL = VSS  
Fast charge pending  
Low  
1
8 second low  
Fast charging  
Low  
High  
Fast charge complete, top-off, and/or trickle  
High  
Low  
Mode 2  
bq2004E  
Charge Action State (See note)  
Battery absent  
LED1  
Low  
LED2  
Low  
Fast charge pending or discharge-before-charge in progress  
Fast charging  
High  
Low  
High  
High  
Low  
DSEL = Floating  
Fast charge complete, top-off, and/or trickle  
High  
Mode 2  
bq2004H  
Charge Action State (See note)  
Battery absent  
LED1  
Low  
LED2  
Low  
Discharge-before-charge in progress  
High  
High  
1
8 second high  
DSEL = Floating Fast charge pending  
Fast charging  
Low  
1
8 second low  
Low  
High  
Fast charge complete, top-off, and/or trickle  
High  
Low  
Mode 3  
bq2004E/H  
Charge Action State  
LED1  
LED2  
Low  
Battery absent  
Low  
1
8 second high  
Fast charge pending or discharge-before-charge in progress  
Low  
1
8 second low  
DSEL = VCC  
Fast charging  
Low  
High  
Fast charge complete, top-off, and/or trickle  
High  
Low  
Note:  
Pulse trickle is inhibited in Mode 2.  
6
bq2004E/H  
Maximum charge time is configured using the TM pin.  
Time settings are available for corresponding charge  
rates of C/4, C/2, 1C, and 2C. Maximum time-out termi-  
nation is enforced on the fast-charge phase, then reset,  
and enforced again on the top-off phase, if selected.  
There is no time limit on the trickle-charge phase.  
Charge Current Control  
The bq2004E/H controls charge current through the MOD  
output pin. The current control circuitry is designed to sup-  
port implementation of a constant-current switching regulator  
or to gate an externally regulated current source.  
When used in switch mode configuration, the nominal  
regulated current is:  
Top-off Charge  
An optional top-off charge phase may be selected to  
follow fast charge termination for the C/2 through 4C  
rates. This phase may be necessary on NiMH or other  
battery chemistries that have a tendency to terminate  
charge prior to reaching full capacity. With top-off en-  
abled, charging continues at a reduced rate after  
fast-charge termination for a period of time equal to  
0.235the fast-charge safety time (See Table 1.) Dur-  
ing top-off, the MOD pin is enabled at a duty cycle of  
260µs active for every 1820µs inactive. This modula-  
tion results in an average rate 1/8th that of the fast  
charge rate. Maximum voltage, time, and temperature  
are the only termination methods enabled during top-  
off.  
I
REG = 0.225V/RSNS  
Charge current is monitored at the SNS input by the  
voltage drop across a sense resistor, RSNS, between the  
low side of the battery pack and ground. RSNS is sized to  
provide the desired fast charge current.  
If the voltage at the SNS pin is less than VSNSLO, the  
MOD output is switched high to pass charge current to  
the battery.  
When the SNS voltage is greater than VSNSHI, the MOD  
output is switched low—shutting off charging current to  
the battery.  
VSNSLO = 0.04 VCC 25mV  
VSNSHI = 0.05 VCC 25mV  
Pulse-Trickle Charge  
Pulse-trickle charging may be configured to follow the  
fast charge and optional top-off charge phases to com-  
pensate for self-discharge of the battery while it is idle  
in the charger.  
When used to gate an externally regulated current  
source, the SNS pin is connected to VSS, and no sense re-  
sisitor is required.  
In the pulse-trickle mode, MOD is active for 260µs of a  
period specified by the settings of TM1 and TM2. See  
Table 1. The resulting trickle-charge rate is C/512.  
Both pulse trickle and top-off may be disabled by tying  
TM1 and TM2 to VSS or by selecting Mode 2 in the dis-  
play.  
Charge Status Indication  
Charge status is indicated by the LED1 and LED2 out-  
puts. The state of these outputs in the various charge cy-  
cle phases is given in Table 2 and illustrated in Figure 3.  
In all cases, if VCELL exceeds the voltage at the MCV  
pin, both LED1 and LED2 outputs are held low regard-  
less of other conditions. Both can be used to directly  
drive an LED.  
7
bq2004E/H  
New Charge Cycle Started by  
Any One of:  
Falling Edge  
on DCMD  
V
Rising to Valid Level  
CC  
Yes  
V
Battery Replacement  
DCMD Tied to Ground?  
No  
(V  
Falling through V  
)
CELL  
MCV  
Inhibit (INH) Released  
< V  
Discharge-  
Before-Charge  
CELL  
EDV  
V
< V  
< V  
CELL MCV  
EDV  
Battery Voltage?  
Charge  
Pending  
V
< V  
V
> V  
CELL  
EDV  
CELL  
MCV  
V
> V  
CELL  
MCV  
V
V
> V  
or  
LTF  
TEMP  
< V  
HTF  
TEMP  
V
>
CELL  
Top-Off and  
Pulse-Trickle  
Charge  
V
MCV  
Battery Temperature?  
V
< V  
< V  
TEMP LTF  
HTF  
Battery  
Absent  
V
< V  
< V  
EDV  
CELL  
MCV  
and  
V
< V  
TEMP  
< V  
HTF  
LTF  
t > tMCV  
Pulse  
Trickle  
Charge  
Pulse  
Trickle  
Charge  
Fast  
Charge  
V
V
MCV  
>
CELL  
-
V or  
V
V
<
CELL  
MCV  
T/ t or  
V
or  
<
V
TCO  
Charge  
TEMP  
Complete  
V
V
V
V
>
>
CELL  
MCV  
CELL  
MCV  
Maximum Time Out  
Pulse  
Trickle  
Charge  
Top-Off  
Selected?  
Top-Off  
Charge  
Yes  
V
< V  
TCO  
TEMP  
No  
or 0.235 Maximum  
Time Out  
SD2004EH.eps  
Figure 3. Charge Algorithm State Diagram  
8
bq2004E/H  
Absolute Maximum Ratings  
Symbol  
VCC  
Parameter  
VCC relative to VSS  
Minimum  
Maximum  
Unit  
Notes  
-0.3  
+7.0  
V
DC voltage applied on any pin ex-  
cluding VCC relative to VSS  
VT  
-0.3  
+7.0  
V
TOPR  
Operating ambient temperature  
Storage temperature  
-20  
-55  
-
+70  
+125  
+260  
+85  
°C  
°C  
°C  
°C  
Commercial  
TSTG  
TSOLDER  
TBIAS  
Soldering temperature  
10 sec max.  
Temperature under bias  
-40  
Note:  
Permanent device damage may occur if Absolute Maximum Ratings are exceeded. Functional opera-  
tion should be limited to the Recommended DC Operating Conditions detailed in this data sheet. Expo-  
sure to conditions beyond the operational limits for extended periods of time may affect device reliability.  
DC Thresholds (T = T  
; V 10%)  
OPR CC  
A
Symbol  
Parameter  
Rating  
Tolerance  
Unit  
Notes  
High threshold at SNS result-  
ing in MOD = Low  
0.05 VCC  
*
VSNSHI  
V
0.025  
Low threshold at SNS result-  
ing in MOD = High  
VSNSLO  
VLTF  
0.04 * VCC  
V
V
0.010  
0.030  
0.030  
0.030  
0.030  
4
VTEMP VLTF inhib-  
its/terminates charge  
0.4 VCC  
*
Low-temperature fault  
High-temperature fault  
End-of-discharge voltage  
Maximum cell voltage  
VTEMP VHTF inhibits  
charge  
VCELL < VEDV inhibits  
fast charge  
VCELL > VMCV inhibits/  
terminates charge  
(1/3 VLTF) + (2/3 VTCO  
)
VHTF  
VEDV  
VMCV  
VTHERM  
-V  
V
*
*
0.4 VCC  
*
V
0.8 VCC  
*
V
TS input change forT/t  
detection  
V
CC = 5V, TA = 25°C  
CC = 5V, TA = 25°C  
-16  
-12  
-6  
mV  
mV  
mV  
BAT input change for -V  
detection  
BAT input change for PVD  
detection  
V
4
VCC = 5V, TA = 25°C  
PVD  
2
9
bq2004E/H  
Recommended DC Operating Conditions (T = T  
A
OPR)  
Symbol  
VCC  
Condition  
Supply voltage  
Minimum  
Typical Maximum  
Unit  
V
Notes  
4.5  
0
5.0  
5.5  
VBAT  
VCELL  
VTS  
Battery input  
-
-
-
-
-
-
-
-
-
VCC  
VCC  
VCC  
VCC  
V
BAT voltage potential  
Thermistor input  
TS voltage potential  
Temperature cutoff  
Logic input high  
Logic input high  
Logic input low  
0
V
VBAT - VSNS  
0
V
VTEMP  
VTCO  
0
V
VTS - VSNS  
0.2 VCC  
*
0.4 VCC  
*
V
Valid T/t range  
DCMD, INH  
2.0  
-
V
VIH  
VCC - 0.3  
-
V
TM1, TM2, DSEL, VSEL  
DCMD, INH  
-
-
0.8  
0.3  
V
VIL  
Logic input low  
V
TM1, TM2, DSEL, VSEL  
DIS, MOD, LED1, LED2,  
VOH  
VCC - 0.8  
Logic output high  
Logic output low  
-
-
-
V
V
IOH -10mA  
DIS, MOD, LED1, LED2,  
IOL 10mA  
VOL  
-
0.8  
ICC  
ISB  
IOH  
IOL  
Supply current  
-
-
1
-
3
1
mA Outputs unloaded  
µA  
INH = VIL  
Standby current  
DIS, LED1, LED2, MOD source  
DIS, LED1, LED2, MOD sink  
Input leakage  
-10  
10  
-
-
-
mA @VOH = VCC - 0.8V  
mA @VOL = VSS + 0.8V  
-
-
-
1
µA  
µA  
INH, BAT, V = VSS to VCC  
IL  
Input leakage  
50  
-
400  
DCMD, V = VSS to VCC  
TM1, TM2, DSEL, VSEL,  
V = VSS to VSS + 0.3V  
µA  
µA  
IIL  
Logic input low source  
Logic input high source  
-
-
-
70  
-
TM1, TM2, DSEL, VSEL,  
V = VCC - 0.3V to VCC  
IIH  
-70  
TM1, TM2, DSEL, and VSEL  
should be left disconnected  
(floating) for Z logic input state  
µA  
IIZ  
Tri-state  
-2  
-
2
Note:  
All voltages relative to VSS except as noted.  
10  
bq2004E/H  
Impedance  
Symbol  
Parameter  
Minimum  
Typical  
Maximum  
Unit  
MΩ  
MΩ  
MΩ  
MΩ  
RBAT  
RTS  
Battery input impedance  
TS input impedance  
50  
50  
50  
50  
-
-
-
-
-
-
-
-
RTCO  
RSNS  
TCO input impedance  
SNS input impedance  
Timing (T = 0 to +70°C; V  
10%)  
CC  
A
Symbol  
Parameter  
Minimum Typical Maximum  
Unit  
Notes  
Pulse width for DCMD  
and INH pulse command  
Pulse start for charge or discharge  
before charge  
µs  
tPW  
dFCV  
fREG  
1
-16  
-
-
-
-
-
Time base variation  
16  
%
VCC = 4.75V to 5.25V  
MOD output regulation  
frequency  
300  
kHz  
Maximum voltage termi-  
nation time limit  
Time limit to distinguish battery re-  
moved from charge complete.  
tMCV  
1
-
2
s
Note:  
Typical is at TA = 25°C, VCC = 5.0V.  
11  
bq2004E/H  
16-Pin DIP Narrow (PN)  
(
)
16-Pin PN 0.300" DIP  
Inches  
Millimeters  
Min.  
Dimension  
Min.  
Max.  
0.180  
0.040  
0.022  
0.065  
0.013  
0.770  
0.325  
0.280  
0.370  
0.110  
0.150  
0.040  
Max.  
4.57  
1.02  
0.56  
1.65  
0.33  
19.56  
8.26  
7.11  
9.40  
2.79  
3.81  
1.02  
A
A1  
B
0.160  
0.015  
0.015  
0.055  
0.008  
0.740  
0.300  
0.230  
0.300  
0.090  
0.115  
0.020  
4.06  
0.38  
0.38  
1.40  
0.20  
18.80  
7.62  
5.84  
7.62  
2.29  
2.92  
0.51  
B1  
C
D
E
E1  
e
G
L
S
12  
bq2004E/H  
16-Pin SOIC Narrow (SN)  
(
)
16-Pin SN 0.150" SOIC  
Inches  
Millimeters  
Dimension  
Min.  
Max.  
Min.  
1.52  
0.10  
0.33  
0.18  
9.78  
3.81  
1.14  
5.72  
0.38  
Max.  
1.78  
0.25  
0.51  
0.25  
10.16  
4.06  
1.40  
6.22  
0.89  
D
B
e
A
A1  
B
0.060  
0.004  
0.013  
0.007  
0.385  
0.150  
0.045  
0.225  
0.015  
0.070  
0.010  
0.020  
0.010  
0.400  
0.160  
0.055  
0.245  
0.035  
E
C
D
E
H
e
A
C
H
L
A1  
.004  
L
13  
bq2004E/H  
Data Sheet Revision History  
Change No.  
Page No.  
Description  
Nature of Change  
Clarification  
1
All  
Combined bq2004E and bq2004H, revised and  
expanded format of this data sheet  
2
7
5
Separated bq2004E and bq2004H in Table 2, LED  
Output Summary  
Clarification  
Clarification  
3
4
Description of charge-pending state  
Note:  
Change 1 = Oct. 1997 B changes from Sept. 1996 (bq2004E), Feb. 1997 (bq2004H).  
Change 2 = Feb. 1998 C changes from Oct. 1997 B.  
Change 3 = Dec. 1998 D changes from Feb. 1998 C.  
Change 4 = June 1999 E changes from Dec. 1998 D.  
14  
bq2004E/H  
Ordering Information  
bq2004  
Package Option:  
PN = 16-pin narrow plastic DIP  
SN = 16-pin narrow SOIC  
Device:  
E = bq2004E Fast-Charge IC  
H= bq2004H Fast-Charge IC  
15  
IMPORTANT NOTICE  
Texas Instruments and its subsidiaries (TI) reserve the right to make changes to their products or to discontinue  
any product or service without notice, and advise customers to obtain the latest version of relevant information  
to verify, before placing orders, that information being relied on is current and complete. All products are sold  
subject to the terms and conditions of sale supplied at the time of order acknowledgement, including those  
pertaining to warranty, patent infringement, and limitation of liability.  
TI warrants performance of its semiconductor products to the specifications applicable at the time of sale in  
accordance with TI’s standard warranty. Testing and other quality control techniques are utilized to the extent  
TI deems necessary to support this warranty. Specific testing of all parameters of each device is not necessarily  
performed, except those mandated by government requirements.  
CERTAIN APPLICATIONS USING SEMICONDUCTOR PRODUCTS MAY INVOLVE POTENTIAL RISKS OF  
DEATH, PERSONAL INJURY, OR SEVERE PROPERTY OR ENVIRONMENTAL DAMAGE (“CRITICAL  
APPLICATIONS”). TI SEMICONDUCTOR PRODUCTS ARE NOT DESIGNED, AUTHORIZED, OR  
WARRANTED TO BE SUITABLE FOR USE IN LIFE-SUPPORT DEVICES OR SYSTEMS OR OTHER  
CRITICAL APPLICATIONS. INCLUSION OF TI PRODUCTS IN SUCH APPLICATIONS IS UNDERSTOOD TO  
BE FULLY AT THE CUSTOMER’S RISK.  
In order to minimize risks associated with the customer’s applications, adequate design and operating  
safeguards must be provided by the customer to minimize inherent or procedural hazards.  
TI assumes no liability for applications assistance or customer product design. TI does not warrant or represent  
that any license, either express or implied, is granted under any patent right, copyright, mask work right, or other  
intellectual property right of TI covering or relating to any combination, machine, or process in which such  
semiconductor products or services might be or are used. TI’s publication of information regarding any third  
party’s products or services does not constitute TI’s approval, warranty or endorsement thereof.  
Copyright 1999, Texas Instruments Incorporated  

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