BQ2022A_17 [TI]
1K-Bit Serial EPROM with SDQ Interface;
| 型号： | BQ2022A_17 |
| 厂家： | 
TEXAS INSTRUMENTS |
| 描述： | 1K-Bit Serial EPROM with SDQ Interface 可编程只读存储器 电动程控只读存储器 |
| 文件： | 总20页 (文件大小：297K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
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www.ti.com
SLUS724–SEPTEMBER 2006
1K-BIT SERIAL EPROM WITH SDQ INTERFACE
The bq2022A SDQ™ interface requires only a single
connection and a ground return. The DATA pin is
also the sole power source for the bq2022A. The bus
architecture allows multiple SDQ devices to be
connected to a single host.
FEATURES
•
1024 bits of One-Time Programmable (OTP)
EPROM For Storage Of User-Programmable
Configuration Data
•
•
•
•
Factory-Programmed Unique 64-Bit
Identification Number
The small surface-mount package options saves
printed-circuit-board space, while the low cost makes
it ideal for applications such as battery pack
configuration parameters, record maintenance, asset
tracking, product-revision status, and access-code
security.
Bus-Interface Architecture Allowing Multiple
bq2022As Attached to a Single Host
Single-Wire Interface to Reduce Circuit Board
Routing
Synchronous Communication Reduces Host
Interrupt Overhead
ORDERING INFORMATION(1)
PACKAGED DEVICES(3)
•
•
No Standby Power Required
(2)
TA
PART
PACKAGE
STATUS
Available in a 3-Pin SOT23 Package and
TO-92 Package
NUMBER
bq2022ADBZR
bq2022ALPR
SOT23-3
TO-92
–20°C to 70°C
PREVIEW
APPLICATIONS
(1) For the most current package and ordering information, see
the Package Option Addendum at the end of this document, or
see the TI Web site at www.ti.com
•
•
•
•
Security Encoding
Inventory Tracking
Product-Revision Maintenance
Battery-Pack Identification
(2) Device specified to communicate at –40°C to 85°C
(3) The device is available only in tape and reel with a base
quantity of 3000 units for the bq2022ADBZR and 2000 units for
the bq2022ALPR.
DESCRIPTION
The bq2022A is a 1K-bit serial EPROM containing a
factory-programmed, unique 48-bit identification
number, 8-bit CRC generation, and the 8-bit family
code (09h). A 64-bit status register controls write
protection and page redirection.
BLOCK DIAGRAM
DBZ PACKAGE
(TOP VIEW)
SDQ
VSS
1
3
2
VSS
ID ROM
(64 bits)
Internal
Bus
SDQ
VSS
1
2
SDQ Communications
Controller and 8-Bit CRC
Generation Circuit
EPROM
MEMORY
(1024 bits)
LP PACKAGE
(BOTTOM VIEW)
3
VSS
EPROM
STATUS
(64 bits)
RAM
Buffer
(8 bytes)
VSS
SDQ
NC
1
2
3
bq2022A
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of Texas
Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.
SDQ is a trademark of Texas Instruments.
PRODUCTION DATA information is current as of publication date.
Copyright © 2006, Texas Instruments Incorporated
Products conform to specifications per the terms of the Texas
Instruments standard warranty. Production processing does not
necessarily include testing of all parameters.
bq2022A
www.ti.com
SLUS724–SEPTEMBER 2006
These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam
during storage or handling to prevent electrostatic damage to the MOS gates.
ABSOLUTE MAXIMUM RATINGS
over operating free-air temperature range unless otherwise noted(1)
UNIT
VPU
IOL
DC voltage applied to data
–0.3 V to 7 V
40 mA
Low-level output current
ESD IEC 61000-4-2 Air discharge
Operating free-air temperature range
Data to VSS, VSS to data
15 kV
TA
–20°C to 70°C
–40°C to 85°C
–55°C to 125°C
260°C
TA(Comm) Communication free-air temperature range
Communication is specified by design
Tstg
Storage temperature range
Lead temperature (soldering, 10 s)
(1) Stresses beyond those listed under absolute maximum ratings may cause permanent damage to the device. These are stress ratings
only, and functional operation of the device at these or any other conditions beyond those indicated under recommended operating
conditions is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
DC ELECTRICAL CHARACTERISTICS
TA = –20°C to 70°C; VPU(min) = 2.65 VDC to 5.5 VDC, all voltages relative to VSS
PARAMETER
IDATA Supply current
TEST CONDITION
MIN
TYP
MAX UNIT
VPU = 5.5 V
20
0.4
0.4
5.5
4
µA
Logic 0, VPU = 5.5 V, IOL = 4 mA, SDQ pin
VOL
Low-level output voltage
V
Logic 0, VPU = 2.65 V, IOL = 2 mA
VOH
IOL
High-level output voltage
Low-level output current (sink)
Low-level input voltage
High-level input voltage
Programming voltage
Logic 1
VPU
VOL = 0.4 V, SDQ pin
Logic 0
mA
V
VIL
0.8
VIH
VPP
Logic 1
2.2
V
11.5
12
V
AC SWITCHING CHARACTERISTCS
TA = –20°C to 70°C; VPU(min) = 2.65 VDC to 5.5 VDC, all voltages relative to VSS
PARAMETER
TEST CONDITION
MIN
TYP
MAX UNIT
(1)
tc
Bit cycle time
60
120
15
15
tc
µs
µs
µs
µs
(1)
tWSTRB
tWDSU
tWDH
Write start cycle
1
tWSTRB
60
(1)
Write data setup
(1)(2)
Write data hold
1
(1)
trec
Recovery time
µs
For memory command only
5
(1)
tRSTRB
tODD
tODHO
tRST
Read start cycle
1
13
13
60
µs
µs
µs
µs
µs
µs
µs
µs
µs
(1)
Output data delay
tRSTRB
17
(1)
Output data hold
(1)
Reset time
480
15
(1)
tPPD
Presence pulse delay
60
(1)
tPP
Presence pulse
60
240
tEPROG
tPSU
EPROM programming time
Program setup time
2500
5
tPREC
Program recovery time
5
(1) 5-kΩ series resistor between SDQ pin and VPU. (See Figure 1)
(2) tWDH must be less than tc to account for recovery.
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AC SWITCHING CHARACTERISTCS (continued)
TA = –20°C to 70°C; VPU(min) = 2.65 VDC to 5.5 VDC, all voltages relative to VSS
PARAMETER
Program rising-edge time
Program falling-edge time
TEST CONDITION
MIN
TYP
MAX UNIT
tPRE
5
5
µs
µs
µs
tPFE
tRSTREC
480
Terminal Functions
TERMINAL
I/O
DESCRIPTION
NAME
NO.
bq2022ADBZR
SDQ
VSS
1
I
Data
2, 3
-
Ground
bq2022ALPR
VSS
1
2
3
-
I
GND
SDQ
Data
NC
-
No connection
FUNCTIONAL DESCRIPTION
GENERAL OPERATION
The block diagram on page 1 shows the relationships among the major control and memory sections of the
bq2022A. The bq2022A has three main data components: a 64-bit factory-programmed ROM, including 8-bit
family code, 48-bit identification number and 8-bit CRC value, 1024-bit EPROM, and EPROM STATUS bytes.
Power for read and write operations is derived from the DATA pin. An internal capacitor stores energy while the
signal line is high and releases energy during the low times of the DATA pin, until the pin returns high to
replenish the charge on the capacitor. A special manufacturer's PROGRAM PROFILE BYTE can be read to
determine the programming profile required to program the part.
1024-BIT EPROM
Table 1 is a memory map of the 1024-bit EPROM section of the bq2022A, configured as four pages of 32 bytes
each. The 8-byte RAM buffers are additional registers used when programming the memory. Data are first
written to the RAM buffer and then verified by reading an 8-bit CRC from the bq2022A that confirms proper
receipt of the data. If the buffer contents are correct, a programming command is issued and an 8-byte segment
of data is written into the selected address in memory. This process ensures data integrity when programming
the memory. The details for reading and programming the 1024-bit EPROM portion of the bq2022A are in the
Memory Function Commands section of this data sheet.
Table 1. 1024-Bit EPROM Data Memory Map
ADDRESS(HEX)
0060-007F
PAGE
Page 3
Page 2
Page 1
Page 0
0040-005F
0020-003F
0000-001F
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EPROM STATUS MEMORY
In addition to the programmable 1024-bits of memory are 64 bits of status information contained in the EPROM
STATUS memory. The STATUS memory is accessible with separate commands. The STATUS bits are EPROM
and are read or programmed to indicate various conditions to the software interrogating the bq2022A. The first
byte of the STATUS memory contains the write protect page bits, that inhibit programming of the corresponding
page in the 1024-bit main memory area if the appropriate write-protection bit is programmed. Once a bit has
been programmed in the write protect page byte, the entire 32-byte page that corresponds to that bit can no
longer be altered but may still be read. The write protect bits may be cleared by using the WRITE STATUS
command.
The next four bytes of the EPROM STATUS memory contain the page address redirection bytes. Bits in the
EPROM status bytes can indicate to the host what page is substituted for the page by the appropriate
redirection byte. The hardware of the bq2022A makes no decisions based on the contents of the page address
redirection bytes. This feature allows the user's software to make a data patch to the EPROM by indicating that
a particular page or pages should be replaced with those indicated in the page address redirection bytes. The
ones complement of the new page address is written into the page address redirection byte that corresponds to
the original (replaced) page. If a page address redirection byte has an FFh value, the data in the main memory
that corresponds to that page are valid. If a page address redirection byte has some other hex value, the data in
the page corresponding to that redirection byte are invalid, and the valid data can now be found at the ones
complement of the page address indicated by the hexadecimal value stored in the associated page address
redirection byte. A value of FDh in the redirection byte for page 1, for example, indicates that the updated data
are now in page 2. The details for reading and programming the EPROM status memory portion of the bq2022A
are given in the Memory Function Commands section.
Table 2. EPROM Status Bytes
ADDRESS (HEX)
PAGE
Write protection bits
BIT0 - write protect page 0
BIT1 - write protect page 1
BIT2 - write protect page 2
BIT3 - write protect page 3
BIT4 to 7 - bitmap of used pages
00h
01h
02h
03h
04h
05h
06h
07h
Redirection byte for page 0
Redirection byte for page 1
Redirection byte for page 2
Redirection byte for page 3
Reserved
Reserved
Factory programmed 00h
Error Checking
To validate the data transmitted from the bq2022A, the host generates a CRC value from the data as they are
received. This generated value is compared to the CRC value transmitted by the bq2022A. If the two CRC
values match, the transmission is error-free. The equivalent polynomial function of this CRC is X8 + X5 + X4 + 1.
Details are found in the CRC Generation Section of this data sheet.
Customizing the bq2022A
The 64-bit ID identifies each bq2022A. The 48-bit serial number is unique and programmed by Texas
Instruments. The default 8-bit family code is 09h; however, a different value can be reserved on an individual
customer basis. Contact your Texas Instruments sales representative for more information.
Bus Termination
Because the drive output of the bq2022A is an open-drain, N-channel MOSFET, the host must provide a source
current or a 5-kΩ external pullup, as shown in the typical application circuit in Figure 1.
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V
PU
SDQ
1
Communications
Controller
CPU
3
VSS
VSS
2
bq2022A
HOST
Figure 1. Typical Applications Circuit
Serial Communication
A host reads, programs, or checks the status of the bq2022A through the hierarchical command structure of the
SDQ interface. Figure 2 shows that the host must first issue a ROM command before the EPROM memory or
status can be read or modified. The ROM command either selects a specific device when multiple devices are
on the SDQ bus, or skips the selection process in single SDQ device applications.
Initialization
ROM Command Sequence
Memory/Status Command Sequence
Figure 2. General Command Sequence
Initialization
Initialization consists of two pulses, the RESET and the PRESENCE pulses. The host generates the RESET
pulse, while the bq2022A responds with the PRESENCE pulse. The host resets the bq2022A by driving the
DATA bus low for at least 480 µs. For more details, see the RESET section under SDQ Signaling.
ROM COMMANDS
READ ROM
The READ ROM command sequence is the fastest sequence that allows the host to read the 8-bit family code
and 48-bit identification number. It is used if only one SDQ slave device is attached to the bus. The READ ROM
sequence starts with the host generating the RESET pulse of at least 480 µs. The bq2022A responds with a
PRESENCE pulse. Next, the host continues by issuing the READ ROM command, 33h, and then reads the
ROM and CRC byte using the READ signaling (see the READ and WRITE signals section) during the data
frame.
Reset
and
Presence
Read ROM (33h)
Family Code and Identification
Number (7 BYTES)
0
1
1
0
0
1
1
0
Signals
CRC (1 BYTE)
Figure 3. READ ROM Sequence
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MATCH ROM
The MATCH ROM command, 55h, is used by the host to select a specific SDQ device when the family code and
identification number is known. The host issues the MATCH ROM command followed by the family code, ROM
number, and the CRC byte. Only the device that matches the 64-bit ROM sequence is selected and available to
perform subsequent Memory/Status Function commands.
Reset
and
Presence
Signals
Match ROM (55h)
Family Code and Identification
Number (7 BYTES)
1
0
1
0
1
0
1
0
CRC (1 BYTE)
Figure 4. MATCH ROM Sequence
SEARCH ROM
The SEARCH ROM command, F0h, is used to obtain the 8-bit family code and the 48-bit identification number
and 8-bit CRC of any SDQ device when it is unknown. All devices on the bus are read under the SEARCH ROM
command with the use of a collision-detect and device-decode method. Figure 5 shows the SEARCH ROM
sequence started by the host, generating the RESET pulse of at least 480 µs. The bq2022A responds with a
PRESENCE pulse. The host then issues the command in the command frame by writing an F0h. During the
DATA READ of the SEARCH ROM sequence, each bit is transmitted three times. The bq2022A transmits the bit
followed by the complement of the bit. The host in turn retransmits the bit just read. Collision detection is
performed by comparing the bit and bit complement time-slots. If they are both zero, this indicates that a
collision has occurred, indicating multiple devices on the bus. The device decode is achieved in the third
transmission of the bit from the host back to the bq2022A. If the bit transmitted by the host does not match the
bit transmitted by the bq2022A, then the device with mismatch stops transmitting. Devices that did match,
continue transmitting. This process is continued until all bits of a single device are read. The SEARCH ROM
command is reissued and the process is repeated to read additional devices.
NOTE:
NOTE: If the number of devices on the bus is unknown, the SEARCH ROM
command should be used.
Reset
and
Data Read
Search ROM (F0h)
Presence
0
0
0
0
1
1
1
1
Signals
BIT0
BITn
BIT63
A. B = bit(n): nth bit transmitted by bq2022A
B. C = bit(n): complement of nth bit transmitted by bq2022A
C. H = bit(n): nth bit transmitted by host
Figure 5. SEARCH ROM Sequence
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SKIP ROM
This SKIP ROM command, CCh, allows the host to access the memory/status functions without issuing the
64-bit ROM code sequence. The SKIP ROM command is directly followed by a memory/status functions
command. Because this command can cause bus collisions when multiple SDQ devices are on the same bus,
this command should be issued in single device applications.
Reset
and
Presence
Skip ROM (CCh)
0
1
0
1
0
1
0
1
Signals
Figure 6. SKIP ROM Sequence
MEMORY/STATUS FUNCTION COMMANDS
Six memory/status function commands allow read and modification of the 1024-bit EPROM data memory or the
64-bit EPROM status memory. There are two types of READ MEMORY command, plus the WRITE MEMORY,
READ STATUS, and WRITE STATUS commands. Additionally, the part responds to a PROGRAM PROFILE
byte command. The bq2022A responds to memory/status function commands only after a part is selected by a
ROM command.
READ DATA MEMORY COMMANDS
Two READ MEMORY commands are available on the bq2022A. Both commands are used to read data from the
1024-bit EPROM data field. They are the READ MEMORY/Page CRC and the READ MEMORY/Field CRC
commands. The READ MEMORY/Page CRC generates CRC at the end any 32-byte page boundary whereas
the READ MEMORY/Field CRC generates CRC when the end of the 1024-bit data memory is reached.
READ MEMORY/Page CRC
To read memory and generate the CRC at the 32-byte page boundaries of the bq2022A, the ROM command is
followed by the READ MEMORY/Generate CRC command, C3h, followed by the address low byte and then the
address high byte.
An 8-bit CRC of the command byte and address bytes is computed by the bq2022A and read back by the host
to confirm that the correct command word and starting address were received. If the CRC read by the host is
incorrect, a reset pulse must be issued and the entire sequence must be repeated. If the CRC received by the
host is correct, the host issues read time slots and receives data from the bq2022A starting at the initial address
and continuing until the end of a 32-byte page is reached. At that point, the host sends eight additional read time
slots and receive an 8-bit CRC that is the result of shifting into the CRC generator all of the data bytes from the
initial starting byte to the last byte of the current page. Once the 8-bit CRC has been received, data is again
read from the 1024-bit EPROM data field starting at the next page. This sequence continues until the final page
and its accompanying CRC are read by the host. Thus each page of data can be considered to be 33 bytes
long, the 32 bytes of user-programmed EPROM data and an 8-bit CRC that gets generated automatically at the
end of each page.
READ
MEMORY/Generate
CRC Command
EPROM Memory and CRC
Byte
Generated at 32-Byte
Page
Initialization and ROM
Command Sequence
Read and
Verify CRC
Address Low Byte Address High Byte
A0 A7 A8 A15
C3h
Boundaries
NOTE: Individual bytes of address and data are transmitted LSB first.
Figure 7. READ MEMORY/Page CRC
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READ MEMORY/Field CRC
To read memory without CRC generation on 32-byte page boundaries, the ROM command is followed by the
READ MEMORY command, F0h, followed by the address low byte and then the address high byte.
NOTE:
As shown in Figure 8, individual bytes of address and data are transmitted LSB first.
An 8-bit CRC of the command byte and address bytes is computed by the bq2022A and read back by the host
to confirm that the correct command word and starting address were received. If the CRC read by the host is
incorrect, a reset pulse must be issued and the entire sequence must be repeated. If the CRC received by the
host is correct, the host issues read time slots and receives data from the bq2022A starting at the initial address
and continuing until the end of the 1024-bit data field is reached or until a reset pulse is issued. If reading occurs
through the end of memory space, the host may issue eight additional read time slots and the bq2022A
responds with an 8-bit CRC of all data bytes read from the initial starting byte through the last byte of memory.
After the CRC is received by the host, any subsequent read time slots appear as logical 1s until a reset pulse is
issued. Any reads ended by a reset pulse prior to reaching the end of memory does not have the 8-bit CRC
available.
Read EPROM
Address High Read and Memory Until End
Initialization and ROM
READ MEMORY Command
F0h
Address Low
Byte
Read and
Verify CRC
Command
Sequence
Byte
Verify CRC
of EPROM
Memory
A0
A7 A8
A15
Figure 8. READ MEMORY/Field CRC
WRITE MEMORY
The WRITE MEMORY command is used to program the 1024-bit EPROM memory field. The 1024-bit memory
field is programmed in 8-byte segments. Data is first written into an 8-byte RAM buffer one byte at a time. The
contents of the RAM buffer is then ANDed with the contents of the EPROM memory field when the programming
command is issued.
Figure 9 illustrates the sequence of events for programming the EPROM memory field. After issuing a ROM
command, the host issues the WRITE MEMORY command, 0Fh, followed by the low byte and then the high
byte of the starting address. The bq2022A calculates and transmits an 8-bit CRC based on the WRITE
command and address.
If at any time during the WRITE MEMORY process, the CRC read by the host is incorrect, a reset pulse must be
issued, and the entire sequence must be repeated.
After the bq2022A transmits the CRC, the host then transmits 8 bytes of data to the bq2022A. Another 8-bit
CRC is calculated and transmitted based on the 8 bytes of data. If this CRC agrees with the CRC calculated by
the host, the host transmits the program command 5Ah and then applies the programming voltage for at least
2500 µs or tEPROG. The contents of the RAM buffer is then logically ANDed with the contents of the 8-byte
EPROM offset by the starting address.
The starting address can be any integer multiple of eight between 0000 and 007F (hex) such as 0000, 0008,
and 0010 (hex).
The WRITE DATA MEMORY command sequence can be terminated at any point by issuing a reset pulse
except during the program pulse period tPROG
.
NOTE:
The bq2022A responds with the data from the selected EPROM address sent least
significant-bit first. This response should be checked to verify the programmed byte. If
the programmed byte is incorrect, then the host must reset the part and begin the
write sequence again.
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For both of these cases, the decision to continue programming is made entirely by the host, because the
bq2022A is not able to determine if the 8-bit CRC calculated by the host agrees with the 8-bit CRC calculated by
the bq2022A.
Prior to programming, bits in the 1024-bit EPROM data field appear as logical 1s.
N
Write Memory
Selected
State
Selected
State
Command?
(0Fh)
Y
Bus Master Transmits Low Byte Address
(LSB First) AD0 to AD7
Bus Master Transmits High Byte Address
(LSB First) AD8 to AD15
bq2022A
Loads Address Into Address Counter
bq2022A Transmits CRC of Write Command
and Address, then Clears CRC Register
bq2022A Receives 8 Bytes of Data and
Stores in RAM Buffer
bq2022A Transmits
CRC of Previous Received 8 Bytes of Data
N
Y
N
Code 5Ah
Received
Voltage on Data
Pin = VPP
Y
Contents of RAM buffer AND’ed with contents of
data memory offset by
bq2022A
address counter and stored in data
memory offset by address counter.
programming time required to be at
Increments Address
Counter and Transmits 1
Byte of Data Memory
Indexed by Address Counter
when VPP Vdc on data pin
least t
EPROG
bq2022A
N
8th Byte
Transmits 1 Byte of Data Memory
at Address Counter
Transmitted
Y
bq2022A Waits for Reset
(No Further Response)
NOTE: Individual bytes of address and data are transmitted LSB first
Figure 9. WRITE MEMORY Command Flow
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READ STATUS
The READ STATUS command is used to read data from the EPROM status data field. After issuing a ROM
command, the host issues the READ STATUS command, AAh, followed by the address low byte and then the
address high byte.
NOTE:
An 8-bit CRC of the command byte and address bytes is computed by the bq2022A
and read back by the host to confirm that the correct command word and starting
address were received.
If the CRC read by the host is incorrect, a reset pulse must be issued and the entire sequence must be
repeated. If the CRC received by the host is correct, the host issues read time slots and receives data from the
bq2022A starting at the supplied address and continuing until the end of the EPROM Status data field is
reached. At that point, the host receives an 8-bit CRC that is the result of shifting into the CRC generator all of
the data bytes from the initial starting byte through the final factory-programmed byte that contains the 00h
value.
This feature is provided because the EPROM status information may change over time making it impossible to
program the data once and include an accompanying CRC that is always valid. Therefore, the READ status
command supplies an 8-bit CRC that is based on (and always is consistent with) the current data stored in the
EPROM status data field.
After the 8-bit CRC is read, the host receives logical 1s from the bq2022A until a reset pulse is issued. The
READ STATUS command sequence can be ended at any point by issuing a reset pulse.
Read STATUS
Initialization and ROM
READ MEMORY Command
AAh
Address Low Address High Read and Memory Until End
Read and
Verify CRC
Command
Sequence
Byte
Byte
Verify CRC
of STATUS
Memory
A0
A7 A8
A15
Figure 10. READ STATUS Command
WRITE STATUS
The Write Status command is used to program the EPROM Status data field after the bq2022A has been
selected by a ROM command
The flow chart in Figure 11 illustrates that the host issues the Write Status command, 55h, followed by the
address low byte and then the address high byte the followed by the byte of data to be programmed.
NOTE:
Individual bytes of address and data are transmitted LSB first. An 8-bit CRC of the
command byte, address bytes, and data byte is computed by the bq2022A and read
back by the host to confirm that the correct command word, starting address, and
data byte were received.
If the CRC read by the host is incorrect, a reset pulse must be issued and the entire sequence must be
repeated. If the CRC received by the host is correct, the program command (5Ah) is issued. After the program
command is issued, then the programming voltage, VPP is applied to the DATA pin for period tPROG. Prior to
programming, the first seven bytes of the EPROM STATUS data field appear as logical 1s. For each bit in the
data byte provided by the host that is set to a logical 0, the corresponding bit in the selected byte of the EPROM
STATUS data field is programmed to a logical 0 after the programming pulse has been applied at the byte
location. The eighth byte of the EPROM STATUS byte data field is factory-programmed to contain 00h.
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Write Status
Command?
(55h)
N
Selected
State
Selected
State
Y
bq2022A Receives Low Address Byte
(LSB First) AD0 to AD7
bq2022A Receives High Address Byte
(LSB First) AD8 to AD15
bq2022A Loads Address into Address Counter
bq2022A Receives 1 Byte of Data
and Stores in RAM Buffer
bq2022A Transmits CRC of Write Status
Command, Address, and Data
bq2022A
Calculates and Transmits
CRC of Loaded Address and
Shifted Data
N
Y
N
Code 5Ah
Received
V
= V ?
PP
DATA
Y
Contents of RAM buffer AND’ed with contents of
data memory as pointed to by address counter .
Programming time required to be at least
t
when VPP is applied to the data pin
EPROG
bq2022A
bq2022A
Receives Data Byte
Transmits Data Byte of
Status Memory Pointed
to by Address Counter
bq2022A
Increments Address
Counter and Loads
New Address into CRC
Register
N
End of Status
Memory?
Y
bq2022A Waits for Reset
Figure 11. WRITE STATUS Command Flow
After the programming pulse is applied and the data line returns to VPU, the host issues eight read time slots to
verify that the appropriate bits have been programmed. The bq2022A responds with the data from the selected
EPROM STATUS address sent least significant bit first. This response should be checked to verify the
11
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programmed byte. If the programmed byte is incorrect, then the host must reset the device and begin the write
sequence again. If the bq2022A EPROM data byte programming was successful, the bq2022A automatically
increments its address counter to select the next byte in the STATUS MEMORY data field. The least significant
byte of the new two-byte address is also loaded into the 8-bit CRC generator as a starting value. The host
issues the next byte of data using eight write time slots.
As the bq2022A receives this byte of data into the RAM buffer, it also shifts the data into the CRC generator that
has been preloaded with the LSB of the current address and the result is an 8-bit CRC of the new data byte and
the LSB of the new address. After supplying the data byte, the host reads this 8-bit CRC from the bq2022A with
eight read time slots to confirm that the address incremented properly and the data byte was received correctly.
If the CRC is incorrect, a Reset Pulse must be issued and the Write Status command sequence must be
restarted. If the CRC is correct, the host issues a programming pulse and the selected byte in memory is
programmed.
NOTE:
The initial write of the WRITE STATUS command, generates an 8-bit CRC value that
is the result of shifting the command byte into the CRC generator, followed by the
two-address bytes, and finally the data byte. Subsequent writes within this WRITE
STATUS command due to the bq2022A automatically incrementing its address
counter generates an 8-bit CRC that is the result of loading (not shifting) the LSB of
the new (incremented) address into the CRC generator and then shifting in the new
data byte.
For both of these cases, the decision to continue programming the EPROM Status registers is made entirely by
the host, because the bq2022A is not able to determine if the 8-bit CRC calculated by the host agrees with the
8-bit CRC calculated by the bq2022A. If an incorrect CRC is ignored and a program pulse is applied by the host,
incorrect programming could occur within the bq2022A. Also note that the bq2022A always increments its
internal address counter after the receipt of the eight read time slots used to confirm the programming of the
selected EPROM byte. The decision to continue is again made entirely by the host, therefore if the EPROM data
byte does not match the supplied data byte but the master continues with the WRITE STATUS command,
incorrect programming could occur within the bq2022A. The WRITE STATUS command sequence can be ended
at any point by issuing a reset pulse.
Table 3. Command Code Summary
COMMAND
DESCRIPTION
CATEGORY
(HEX)
Read Serialization ROM and
CRC
33h
55h
F0h
CCh
F0h
AAh
C3h
0Fh
99h
55h
Match Serialization ROM
Search Serialization ROM
Skip Serialization ROM
Read Memory/Field CRC
Read EPROM Status
Read Memory/Page CRC
Write Memory
ROM Commands Available in Command Level I
Memory Function Commands
Available in Command Level II
Programming Profile
Write EPROM Status
Program Command Available Only in WRITE
MEMORY and WRITE STATUS Modes
5Ah
Program Control
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PROGRAM PROFILE BYTE
The PROGRAM PROFILE byte is read to determine the WRITE MEMORY programming sequence required by
a specific manufacturer. After issuing a ROM command, the host issues the PROGRAM PROFILE BYTE
command, 99h. Figure 12 shows the the bq2022A responds with 55h. This informs the host that the WRITE
MEMORY programming sequence is the one described in the WRITE MEMORY command section of this data
sheet.
Other
Program
Profile Command?
99h
N
From ROM
Command
Command
Codes
Y
bq2022 Transmits
55h
bq2022A
is in
Master Issues Reset
Reset State
Figure 12. PROGRAM PROFILE Command Flow
SDQ SIGNALING
All SDQ signaling begins with initializing the device, followed by the host driving the bus low to write a 1 or 0, or
to begin the start frame for a bit read. Figure 13 shows the initialization timing, whereas Figure 14 and Figure 15
show that the host initiates each bit by driving the DATA bus low for the start period, tWSTRB / tRSTRB. After the bit
is initiated, either the host continues controlling the bus during a WRITE, or the bq2022A responds during a
READ.
RESET AND PRESENCE PULSE
If the DATA bus is driven low for more than 120 µs, the bq2022A may be reset. Figure 13 shows that if the
DATA bus is driven low for more than 480 µs, the bq2022A resets and indicates that it is ready by responding
with a PRESENCE PULSE.
RESET
(Sent by Host)
Presence Pulse
(Sent by bq2022A)
V
PU
V
IH
V
IL
t
t
PPD
PP
t
RST
t
RSTREC
Figure 13. Reset Timing Diagram
WRITE
The WRITE bit timing diagram in Figure 14 shows that the host initiates the transmission by issuing the tWSTRB
portion of the bit and then either driving the DATA bus low for a WRITE 0, or releasing the DATA bus for a
WRITE 1.
13
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SLUS724–SEPTEMBER 2006
Write ”1”
Write ”0”
V
PU
V
V
IH
IL
t
t
rec
WSTRB
t
WDSU
t
WDH
Figure 14. Write Bit Timing Diagram
READ
The READ bit timing diagram in Figure 15 shows that the host initiates the transmission of the bit by issuing the
tRSTRB portion of the bit. The bq2022A then responds by either driving the DATA bus low to transmit a READ 0
or releasing the DATA bus to transmit a READ 1.
Read ”1”
Read ”0”
V
PU
V
V
IH
IL
t
RSTRB
t
t
REC
ODD
t
ODHO
Figure 15. Read Bit Timing Diagram
PROGRAM PULSE
V
PP
V
PU
t
t
PREC
t
t
PRE
PFE
PSU
t
EPROG
V
SS
Figure 16. Program Pulse Timing Diagram
IDLE
If the bus is high, the bus is in the IDLE state. Bus transactions can be suspended by leaving the DATA bus in
IDLE. Bus transactions can resume at any time from the IDLE state.
CRC Generation
The bq2022A has an 8-bit CRC stored in the most significant byte of the 64-bit ROM. The bus master can
compute a CRC value from the first 56 bits of the 64-bit ROM and compare it to the value stored within the
bq2022A to determine if the ROM data has been received error-free by the bus master. The equivalent
polynomial function of this CRC is: X8 + X5 + X4 +1.
Under certain conditions, the bq2022A also generates an 8-bit CRC value using the same polynomial function
just shown and provides this value to the bus master to validate the transfer of command, address, and data
bytes from the bus master to the bq2022A. The bq2022A computes an 8-bit CRC for the command, address,
and data bytes received for the WRITE MEMORY and the WRITE STATUS commands and then outputs this
value to the bus master to confirm proper transfer. Similarly, the bq2022A computes an 8-bit CRC for the
command and address bytes received from the bus master for the READ MEMORY, READ STATUS, and
READ DATA/ GENERATE 8-BIT CRC commands to confirm that these bytes have been received correctly. The
CRC generator on the bq2022A is also used to provide verification of error-free data transfer as each page of
data from the 1024-bit EPROM is sent to the bus master during a READ DATA/GENERATE 8-BIT CRC
command, and for the eight bytes of information in the status memory field.
14
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SLUS724–SEPTEMBER 2006
In each case where a CRC is used for data transfer validation, the bus master must calculate a CRC value using
the polynomial function previously given and compare the calculated value to either the 8-bit CRC value stored
in the 64-bit ROM portion of the bq2022A (for ROM reads) or the 8-bit CRC value computed within the bq2022A.
The comparison of CRC values and decision to continue with an operation are determined entirely by the bus
master. No circuitry on the bq2022A prevents a command sequence from proceeding if the CRC stored in or
calculated by the bq2022A does not match the value generated by the bus master. Proper use of the CRC can
result in a communication channel with a high level of integrity.
CLK
DAT
Q
D
Q
D
Q
D
Q
D
+
Q
D
+
Q
D
Q
D
Q
D
+
R
R
R
R
R
R
R
R
UDG-02065
Figure 17. 8-Bit CRC Generator Circuit (X8 + X5 + X4 + 1)
15
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PACKAGE OPTION ADDENDUM
www.ti.com
24-Nov-2006
PACKAGING INFORMATION
Orderable Device
BQ2022ADBZR
BQ2022ADBZRG4
BQ2022ALPR
Status (1)
ACTIVE
ACTIVE
ACTIVE
Package Package
Pins Package Eco Plan (2) Lead/Ball Finish MSL Peak Temp (3)
Qty
Type
Drawing
SOT-23
DBZ
3
3
3
3000 Green (RoHS & CU NIPDAU Level-1-260C-UNLIM
no Sb/Br)
SOT-23
TO-92
DBZ
LP
3000 Green (RoHS & CU NIPDAU Level-1-260C-UNLIM
no Sb/Br)
2000
Pb-Free
(RoHS)
CU SN
N / A for Pkg Type
(1) The marketing status values are defined as follows:
ACTIVE: Product device recommended for new designs.
LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect.
NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in
a new design.
PREVIEW: Device has been announced but is not in production. Samples may or may not be available.
OBSOLETE: TI has discontinued the production of the device.
(2)
Eco Plan - The planned eco-friendly classification: Pb-Free (RoHS), Pb-Free (RoHS Exempt), or Green (RoHS & no Sb/Br) - please check
http://www.ti.com/productcontent for the latest availability information and additional product content details.
TBD: The Pb-Free/Green conversion plan has not been defined.
Pb-Free (RoHS): TI's terms "Lead-Free" or "Pb-Free" mean semiconductor products that are compatible with the current RoHS requirements
for all 6 substances, including the requirement that lead not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered
at high temperatures, TI Pb-Free products are suitable for use in specified lead-free processes.
Pb-Free (RoHS Exempt): This component has a RoHS exemption for either 1) lead-based flip-chip solder bumps used between the die and
package, or 2) lead-based die adhesive used between the die and leadframe. The component is otherwise considered Pb-Free (RoHS
compatible) as defined above.
Green (RoHS & no Sb/Br): TI defines "Green" to mean Pb-Free (RoHS compatible), and free of Bromine (Br) and Antimony (Sb) based flame
retardants (Br or Sb do not exceed 0.1% by weight in homogeneous material)
(3)
MSL, Peak Temp. -- The Moisture Sensitivity Level rating according to the JEDEC industry standard classifications, and peak solder
temperature.
Important Information and Disclaimer:The information provided on this page represents TI's knowledge and belief as of the date that it is
provided. TI bases its knowledge and belief on information provided by third parties, and makes no representation or warranty as to the
accuracy of such information. Efforts are underway to better integrate information from third parties. TI has taken and continues to take
reasonable steps to provide representative and accurate information but may not have conducted destructive testing or chemical analysis on
incoming materials and chemicals. TI and TI suppliers consider certain information to be proprietary, and thus CAS numbers and other limited
information may not be available for release.
In no event shall TI's liability arising out of such information exceed the total purchase price of the TI part(s) at issue in this document sold by TI
to Customer on an annual basis.
Addendum-Page 1
MECHANICAL DATA
MSOT002A – OCTOBER 1994 – REVISED NOVEMBER 2001
LP (O-PBCY-W3)
PLASTIC CYLINDRICAL PACKAGE
0.205 (5,21)
0.175 (4,44)
0.165 (4,19)
0.125 (3,17)
DIA
0.210 (5,34)
0.170 (4,32)
Seating
Plane
0.157 (4,00) MAX
0.050 (1,27)
C
0.500 (12,70) MIN
0.022 (0,56)
0.016 (0,41)
0.016 (0,41)
0.014 (0,35)
0.104 (2,65)
FORMED LEAD OPTION
STRAIGHT LEAD OPTION
D
0.135 (3,43) MIN
0.105 (2,67)
0.095 (2,41)
0.055 (1,40)
0.045 (1,14)
1
2
3
0.105 (2,67)
0.080 (2,03)
0.105 (2,67)
0.080 (2,03)
4040001-2/C 10/01
NOTES: A. All linear dimensions are in inches (millimeters).
B. This drawing is subject to change without notice.
C. Lead dimensions are not controlled within this area
D. FAlls within JEDEC TO -226 Variation AA (TO-226 replaces TO-92)
E. Shipping Method:
Straight lead option available in bulk pack only.
Formed lead option available in tape & reel or ammo pack.
1
POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
MECHANICAL DATA
MSOT002A – OCTOBER 1994 – REVISED NOVEMBER 2001
LP (O-PBCY-W3)
PLASTIC CYLINDRICAL PACKAGE
0.539 (13,70)
0.460 (11,70)
1.260 (32,00)
0.905 (23,00)
0.650 (16,50)
0.610 (15,50)
0.020 (0,50) MIN
0.098 (2,50)
0.384 (9,75)
0.335 (8,50)
0.748 (19,00)
0.217 (5,50)
0.748 (19,00)
0.689 (17,50)
0.433 (11,00)
0.335 (8,50)
0.114 (2,90)
0.094 (2,40)
0.114 (2,90)
0.094 (2,40)
0.169 (4,30)
0.146 (3,70)
DIA
0.266 (6,75)
0.234 (5,95)
0.512 (13,00)
0.488 (12,40)
TAPE & REEL
4040001-3/C 10/01
NOTES: A. All linear dimensions are in inches (millimeters).
B. This drawing is subject to change without notice.
C. Tape and Reel information for the Format Lead Option package.
2
POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
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