BQ24003PWPR中文资料_数据手册_规格书

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SLUS462E − SEPTEMBER 2000 − REVISED NOVEMBER 2004

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FEATURES

DESCRIPTION

D

Highly Integrated Solution With FET Pass

Transistor and Reverse-Blocking Schottky

and Thermal Protection

The bq2400x series ICs are advanced Li-Ion linear

charge management devices for highly integrated and

space-limited applications. They combine high-

accuracy current and voltage regulation; FET pass-

transistor and reverse-blocking Schottky; battery

conditioning, temperature, or input-power monitoring;

charge termination; charge-status indication; and

charge timer in a small package.

D

Integrated Voltage and Current Regulation

With Programmable Charge Current

High-Accuracy Voltage Regulation ( 1%)

Ideal for Low-Dropout Linear Charger

Designs for Single-Cell Li-Ion Packs With

Coke or Graphite Anodes

The bq2400x measures battery temperature using an

external thermistor. For safety reasons, the bq2400x

inhibits charge until the battery temperature is within the

user-defined thresholds. Alternatively, the user can

monitor the input voltage to qualify charge. The

bq2400x series then charge the battery in three phases:

preconditioning, constant current, and constant

voltage. If the battery voltage is below the internal

low-voltage threshold, the bq2400x uses low-current

precharge to condition the battery. A preconditioning

timer is provided for additional safety. Following pre-

conditioning, the bq2400x applies a constant-charge

current to the battery. An external sense-resistor sets

the magnitude of the current. The constant-current

phase is maintained until the battery reaches the

charge-regulation voltage. The bq2400x then

transitions to the constant voltage phase. The user can

configure the device for cells with either coke or

graphite anodes. The accuracy of the voltage regulation

is better than 1% over the operating junction

temperature and supply voltage range.

D

Up to 1.2-A Continuous Charge Current

Safety-Charge Timer During Preconditioning

and Fast Charge

Integrated Cell Conditioning for Reviving

Deeply Discharged Cells and Minimizing Heat

Dissipation During Initial Stage of Charge

D

Optional Temperature or Input-Power

Monitoring Before and During Charge

Various Charge-Status Output Options for

Driving Single, Double, or Bicolor LEDs or

Host-Processor Interface

D

Charge Termination by Minimum Current and

Time

D

Low-Power Sleep Mode

D

Packaging: 5 mm × 5 mm MLP or 20-Lead

TSSOP PowerPAD

APPLICATIONS

Charge is terminated by maximum time or minimum

taper current detection

D

PDAs

Internet Appliances

MP3 Players

Digital Cameras

The bq2400x automatically restarts the charge if the

battery voltage falls below an internal recharge

threshold.

Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of Texas Instruments

semiconductor products and disclaimers thereto appears at the end of this data sheet.

PowerPAD is a trademark of Texas Instruments.

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ꢗꢞ ꢝ ꢧꢣꢢ ꢡ ꢏꢝ ꢛ ꢥꢞ ꢝ ꢢ ꢤ ꢙ ꢙ ꢏꢛ ꢭ ꢧꢝ ꢤ ꢙ ꢛꢝꢡ ꢛꢤ ꢢꢤ ꢙꢙ ꢠꢞ ꢏꢦ ꢬ ꢏꢛꢢ ꢦꢣꢧ ꢤ ꢡꢤ ꢙꢡꢏ ꢛꢭ ꢝꢜ ꢠꢦ ꢦ ꢥꢠ ꢞ ꢠꢟ ꢤꢡꢤ ꢞ ꢙꢨ

Copyright  2002 − 2004, Texas Instruments Incorporated

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SLUS462E − SEPTEMBER 2000 − REVISED NOVEMBER 2004

These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam during

storage or handling to prevent electrostatic damage to the MOS gates.

ORDERING INFORMATION

PACKAGE

CHARGE STATUS

CONFIGURATION

T

J

20-LEAD HTTSOP PowerPAD 20-LEAD 5 mm × 5 mm MLP

(1)

(2)

(PWP) (RGW)

bq24001PWP

bq24002PWP

bq24003PWP

bq24001RGW

bq24002RGW

bq24003RGW

Single LED

2 LEDs

−40°C to 125°C

Single bicolor LED

(1)

(2)

The PWP package is available taped and reeled. Add R suffix to device type (e.g. bq24001PWPR) to order. Quantities 2500 devices per reel.

The RGW package is available taped and reeled. Add R suffix to device type (e.g. bq24001RGWR) to order. Quantities 3000 devices per reel.

PACKAGE DISSIPATION RATINGS

T

≤ 25°C

DERATING FACTOR

A

PACKAGE

Θ

JA

Θ

JC

POWER RATING

ABOVE T = 25°C

A

(1)

PWP

30.88°C/W

31.41°C/W

1.19°C/W

1.25°C/W

3.238 W

0.0324W/°C

0.0318W/°C

(2)

RGW

3.183 W

(1)

(2)

This data is based on using the JEDEC high-K board and topside traces, top and bottom thermal pad (6.5 × 3.4 mm), internal 1 oz power and

ground planes, 8 thermal via underneath the die connecting to ground plane.

This data is based on using the JEDEC high-K board and topside traces, top and bottom thermal pad (3.25 × 3.25 mm), internal 1 oz power

and ground planes, 9 thermal via underneath the die connecting to ground plane.

ABSOLUTE MAXIMUM RATINGS

over operating free-air temperature range unless otherwise noted

(1)

bq24001

bq24002

bq24003

Supply voltage (Vcc with respect to GND)

13.5 V

Input voltage (IN, ISNS, EN, APG/THERM/CR/STAT1/STAT2, VSENSE, TMR SEL, VSEL) (all with respect to GND)

Output current (OUT pins)

2 A

Output sink/source current (STAT1 and STAT2)

10 mA

Operating free-air temperature range, T

−40°C to 70°C

−65°C to 150°C

−40°C to 125°C

300°C

A

Storage temperature range, T

stg

Junction temperature range, T

J

Lead temperature (Soldering, 10 sec)

(1)

Stresses beyond those listed under “absolute maximum ratings” may cause permanent damage to the device. These are stress ratings only, and

functional operation of the device at these or any other conditions beyond those indicated under “recommended operating conditions” is not

implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.

RECOMMENDED OPERATING CONDITIONS

MIN MAX

UNIT

V

Supply voltage, V

CC

4.5

10

Input voltage, VIN

V

Continuous output current

Operating junction temperature range, T

1.2

125

A

−40

°C

J

2

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SLUS462E − SEPTEMBER 2000 − REVISED NOVEMBER 2004

ELECTRICAL CHARACTERISTICS

over recommended operating junction temperature supply and input voltages, and V (V ) ≥ V (IN) ( unless otherwise noted)

I

CC

I

PARAMETER

TEST CONDITIONS

MIN

TYP

MAX

UNIT

mA

µA

V

current

V

> V _UVLO,

CC

EN ≤ V

IH(EN)

1

CC

current, standby mode

EN ≤ V

1

CC

IL(EN)

IN current, standby mode

10

4

µA

IL(EN)

V

CC

< V _UVLO,

CC

V

= 4.3 V, VSENSE = 4.3V

= 4.3 V, VSENSE = 4.3 V

2

Standby current (sum of currents into OUT

and VSENSE pins)

OUT

µA

EN <= Vil

EN,

V

OUT

4

VOLTAGE REGULATION, 0°C ≤ T ≤ 125°C

J

PARAMETER

TEST CONDITIONS

0 < I ≤ 1.2 A

MIN

4.059

4.158

TYP

MAX

UNIT

V

VSEL = V

,

4.10 4.141

4.20 4.242

SS

O

Output voltage

VSEL = V

,

0 < I ≤ 1.2 A

V

CC

O

1 mA ≤ I ≤ 1.2 A,

V

= 5 V,

O

I(IN)

Load regulation

Line regulation

1

mV

V

CC

=5 V,

T = 25°C

J

V +V +V

OUT DO ilim(MAX)

< V

< 10 V, T = 25°C

0.01

0.7

%/V

V

I(VCC)

J

I

O

I

O

= 1.0 A,

4.9 V <V

< 10 V

I(Vcc)

<V

Dropout voltage = VI(IN)-Vout

= 1.2 A,

V

+V +V

< 10 V

0.8

V

OUT DO ilimMAX I(VCC)

CURRENT REGULATION, 0°C ≤ T ≤ 125°C

J

PARAMETER

TEST CONDITIONS

MIN

TYP

MAX

UNIT

Current regulation threshold, V

VSENSE < V

O(VSEL-LOW/HIGH)

0.095

0.1 0.105

V

I(limit)

VSENSE pulsed above VVLOWV to I = 10% of

regulated value

O

Delay time

1

ms

(1)

I

R

increasing from 10% to 90% of regulated value.

(1)

O

SNS

Rise time

0.1

1

≥ 0.2 Ω,

(1)

Specified by design, not production tested.

CURRENT SENSE RESISTOR, 0°C ≤ T ≤ 125°C

J

PARAMETER

TEST CONDITIONS

100 mA ≤ Ilim ≤ 1.2 A

MIN

TYP

MAX

UNIT

External current sense resistor range (R

)

0.083

1

Ω

SNS

PRECHARGE CURRENT REGULATION, 0°C ≤ T ≤ 125°C

J

PARAMETER

TEST CONDITIONS

MIN

TYP

MAX

UNIT

Precharge current regulation

V

<V

0.083 ≤ R ≤ 1.0 Ω

40

60

80

mA

SENSE LOWV,

SNS

V

UVLO COMPARATOR, 0°C ≤ T ≤ 125°C

J

CC

PARAMETER

TEST CONDITIONS

MIN

4.35

4.25

50

TYP

4.43

4.33

MAX

4.50

4.40

UNIT

V

Start threshold

Stop threshold

Hysteresis

V

mV

APG/THERM COMPARATOR, 0°C ≤ T ≤ 125°C

J

PARAMETER

Upper trip threshold

Lower trip threshold

Input bias current

MIN

TYP

MAX

UNIT

V

1.480 1.498 1.515

0.545 0.558 0.570

1

V

µA

LOWV COMPARATOR, 0°C ≤ T ≤ 125°C

J

PARAMETER

Start threshold

MIN

2.80

3.00

100

TYP

2.90

3.10

MAX

3.00

3.20

UNIT

V

Stop threshold

V

Hysteresis

mV

3

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SLUS462E − SEPTEMBER 2000 − REVISED NOVEMBER 2004

ELECTRICAL CHARACTERISTICS CONTINUED

over recommended operating junction temperature supply and input voltages, and V (V ) ≥ V (IN) ( unless otherwise noted)

I

CC

I

HIGHV (RECHARGE) COMPARATOR, 0°C ≤ T ≤ 125°C

J

PARAMETER

TEST CONDITIONS

MIN

TYP

MAX

UNIT

Start threshold

3.80

3.90

4.00

V

OVERV COMPARATOR, 0°C ≤ T ≤ 125°C

J

PARAMETER

Start threshold

TEST CONDITIONS

MIN

4.35

4.25

50

TYP

4.45

4.30

MAX

4.55

4.35

UNIT

V

Stop threshold

V

Hysteresis

mV

TAPERDET COMPARATOR, 0°C ≤ T ≤ 125°C

J

PARAMETER

TEST CONDITIONS

MIN

TYP

MAX

UNIT

Trip threshold

12

18.5

25

mV

EN LOGIC INPUT, 0°C ≤ T ≤ 125°C

J

PARAMETER

High-level input voltage

MIN

TYP

MAX

UNIT

V

2.25

Low-level input voltage

0.8

V

Input pulldown resistance

100

200

kΩ

VSEL LOGIC INPUT, 0°C ≤ T ≤ 125°C

J

PARAMETER

TEST CONDITIONS

MIN

MAX

UNIT

V

High-level input voltage

2.25

Low-level input voltage

0.8

V

Input pulldown resistance

100

200

kΩ

TMR SEL INPUT 0°C ≤ T ≤ 125°C

J

PARAMETER

High-level input voltage

Low-level input voltage

Input bias current

TEST CONDITIONS

MIN

TYP

MAX

UNIT

V

2.7

0.6

15

V

≤ 5V

µA

I(TMR SEL)

STAT1, STAT2 (bq24001, bq24003), 0°C ≤ T ≤ 125°C

J

PARAMETER

TEST CONDITIONS

MIN

TYP

MAX

1.5

UNIT

V

Output (low) saturation voltage

Output (high) saturation voltage

Output turn on/off time

I

O

I

O

I

O

I

O

I

O

= 10 mA

= 4 mA

0.6

V

= −10 mA

= −4 mA

V

CC

V

CC

−1.5

−0.5

V

(1)

=

10 mA, C = 100 p

100

µs

(1) Assured by design, not production tested.

POWER-ON RESET (POR), 0°C ≤ T ≤ 125°C

J

PARAMETER

TEST CONDITIONS

MIN

1.2

25

TYP

MAX

3

UNIT

ms

POR delay

See Note 1

POR falling-edge deglitch

75

µs

(1) Assured by design, not production tested.

4

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SLUS462E − SEPTEMBER 2000 − REVISED NOVEMBER 2004

ELECTRICAL CHARACTERISTICS CONTINUED

over recommended operating junction temperature supply and input voltages, and V (V ) ≥ V (IN) ( unless otherwise noted)

I

CC

I

APG/THERM DELAY, 0°C ≤ T ≤ 125°C

J

PARAMETER

TEST CONDITIONS

MIN

TYP

MAX

UNIT

APG/THERM falling-edge deglitch

See Note 1

25

75

µs

(1) Assured by design, not production tested.

TIMERS, 0°C ≤ T ≤ 125°C

J

PARAMETER

TEST CONDITIONS

MIN

−15%

−20%

TYP

MAX

15%

20%

UNIT

T

A

= 25°C

User-selectable timer accuracy

Precharge and taper timer

22.5

minute

THERMAL SHUTDOWN, 0°C ≤ T ≤ 125°C

J

PARAMETER

Thermal trip

TEST CONDITIONS

MIN

TYP

165

10

MAX

UNIT

°C

See Note 1

Thermal hysteresis

°C

(1) Assured by design, not production tested.

CR PIN, 0°C ≤ T ≤ 125°C

J

PARAMETER

TEST CONDITIONS

< 100 µA

MIN

TYP

MAX

UNIT

Output voltage

0 < I

O(CR)

2,816

2.85

2.88

V

PIN ASSIGNMENTS

bq24002, bq24003

PWP PACKAGE

(TOP VIEW)

bq24001

PWP PACKAGE

(TOP VIEW)

1

20

19

18

17

16

15

14

13

12

11

N/C

IN

N/C

OUT

VSENSE

AGND

STAT2

STAT1

TMR SEL

CR

1

2

3

4

5

6

7

8

9

20

19

18

17

16

15

14

13

12

11

N/C

IN

N/C

OUT

VSENSE

AGND

N/C

STAT1

TMR SEL

CR

2

3

4

V

CC

V

CC

5

ISNS

N/C

APG/THERM

EN

ISNS

6

N/C

APG/THERM

EN

7

8

9

VSEL

GND/HEATSINK

VSEL

GND/HEATSINK

10

N/C

10

N/C

N/C − Do not connect

5

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SLUS462E − SEPTEMBER 2000 − REVISED NOVEMBER 2004

bq24001

RGW PACKAGE

(TOP VIEW)

bq24002, bq24003

RGW PACKAGE

(TOP VIEW)

EN 6

VSEL 7

GND 8

CR 9

20 N/C

EN 6

VSEL 7

GND 8

CR 9

20 N/C

19 N/C

18 N/C

17 OUT

19 N/C

18 N/C

17 OUT

N/C

OUT

N/C

OUT

16

10

16

10

N/C − Do Not Connect

Terminal Functions

TERMINAL

I/O

DESCRIPTION

NAME

AGND

NO.

14

5

16

7

Ground pin; connect close to the negative battery terminal.

Adapter power good input/thermistor sense input

Internal regulator bypass capacitor

APG/THERM

I

CR

EN

12

8

9

6

Charge-enableinput. Active-high enable input with internal pull down. Low-current stand-by mode

active when EN is low.

GND/HEATSINK

10

2, 3

5

8

1, 2

4

Ground pin; connect to PowerPAD heat-sink layout pattern.

Input voltage. This input provides the charging voltage for the battery.

Current sense input

IN

I

ISNS

N/C

1, 6, 11, 10, 13,

No connect. These pins must be left floating. Pin 15 is N/C on bq24001PWP only. Pin 13 is N/C on

bq24001RGWonly.

15, 20

18, 19

14

18−20

16, 17

12

OUT

O

I

Charge current output

STAT1

STAT2

TMR SEL

Status display output 1

15

13

Status display output 2 (for bq24002 and bq24003 only)

Charge timer selection input

13

11

V

CC

4

3

I

Supply voltage

VSEL

9

7

I

4.1 V or 4.2 V charge regulation selection input

Battery voltage sense input

VSENSE

17

15

I

6

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SLUS462E − SEPTEMBER 2000 − REVISED NOVEMBER 2004

FUNCTIONAL BLOCK DIAGRAM

OUT

IN

+

−

VSENSE

TaperDet

0.2*V

ilim

+

−

+

ISNS

V

ilim

V

CC

V

ref

AGND

+

ChargeOK

LowV

UVS

Precharge

−

GND/

HEATSINK

V

uvlo

+

−

OverV

HighV

LowV

ChipEN

EN

+

−

H: V

L: V

= 4.2 V/Cell

= 4.1 V/Cell

Bias and

Ref

Generator

reg

VSEL

R9

R8

−

+

Power On

Delay

V

uvlo

ref

V

ref

+

−

APG/

THERM

CLRFLT

+

−

PWRDWN

Thermal

Shutdown

UVS

V

CC

TaperDet

STAT1

STAT2

PWRDWN

OSC

CC

Charge Control, Charge Timer

and

Display Logic

TMR SEL

REG

CR

Two Open

Drain

Outputs

for

ChargeOK

bq24002

7

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SLUS462E − SEPTEMBER 2000 − REVISED NOVEMBER 2004

TYPICAL CHARACTERISTICS

OUTPUT VOLTAGE

vs

OUTPUT VOLTAGE

vs

OUTPUT CURRENT

JUNCTION TEMPERATURE

4.24

4.22

4.20

4.18

4.16

4.14

4.12

4.10

4.08

4.06

4.24

4.22

4.20

4.18

4.16

4.14

4.12

4.10

4.08

4.06

V

IN

= 5 V

V

T

= 5 V

= 25°C

IN

A

V

SEL

= V

CC

V

= V

CC

SEL

V

SEL

= V

SS

V

= V

SS

SEL

−50

0

50

100

150

0

200

400

600

800

1000

1200

T

J

− Junction Temperature − °C

I

O

− Output Current − mA

Figure 1

Figure 2

OUTPUT VOLTAGE

vs

CURRENT SENSE VOLTAGE

vs

INPUT VOLTAGE

4.24

4.22

4.20

4.18

4.16

4.14

4.12

4.10

4.08

4.06

103

102

101

100

99

I

T

= 100 mA

= 25°C

I

T

= 100 mA

= 25°C

O

A

O

A

V

= V

CC

SEL

V

= V

SS

SEL

98

97

5

6

7

8

9

10

5

6

7

8

9

10

V − Input Voltage − V

I

V − Input Voltage − V

I

Figure 3

Figure 4

8

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SLUS462E − SEPTEMBER 2000 − REVISED NOVEMBER 2004

TYPICAL CHARACTERISTICS

CURRENT SENSE VOLTAGE

vs

QUIESCENT CURRENT

vs

JUNCTION TEMPERATURE

INPUT VOLTAGE

103

0.5

0.4

0.3

0.2

0.1

0.0

I

T

= 100 mA

= 25°C

T

A

= 25°C

O

A

102

101

100

99

V

= 10 V

CC

= 5 V

CC

98

−50

0

50

100

150

5

6

7

8

9

10

T

J

− Junction Temperature − °C

V − Input Voltage − V

I

Figure 5

Figure 6

QUIESCENT CURRENT

(POWER DOWN)

vs

DROPOUT VOLTAGE

vs

INPUT VOLTAGE

600

30

25

20

15

10

5

T

A

= 25°C

T

A

= 25°C

500

400

300

200

100

0

1200 mA

800 mA

400 mA

100 mA

0

4.5

5.5

6.5

7.5

8.5

9.5

5

6

7

8

9

10

V − Input Voltage − V

I

V − Input Voltage − V

I

Figure 7

Figure 8

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SLUS462E − SEPTEMBER 2000 − REVISED NOVEMBER 2004

TYPICAL CHARACTERISTICS

DROPOUT VOLTAGE

vs

DROPOUT VOLTAGE

vs

OUTPUT CURRENT

JUNCTION TEMPERATURE

600

500

400

300

200

100

0

800

700

600

500

400

300

200

100

I

O

= 1.2 A

T

A

= 25°C

V

= 5 V

IN

V

= 5 V

CC

V

= 10 V

IN

V

CC

= 10 V

0

200

400

600

800

1000

1200

−50

0

50

100

150

I

O

− Output Current − mA

T

J

− Junction Temperature − °C

Figure 9

Figure 10

REVERSE CURRENT

vs

REVERSE CURRENT LEAKAGE

vs

JUNCTION TEMPERATURE

VOLTAGE ON OUT PIN

6

5

4

3

2

1

0

4.0

V

OUT

= 4.3 V

T

A

= 25°C

3.5

3.0

2.5

2.0

1.5

1.0

0.5

0.0

−50

0

50

100

150

5

6

7

8

9

10

T

J

− Junction Temperature − °C

V

O

− Voltage on Out Pin − V

Figure 11

Figure 12

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SLUS462E − SEPTEMBER 2000 − REVISED NOVEMBER 2004

APPLICATION INFORMATION

U1

V

CC

1

2

20

19

18

17

16

15

14

13

12

11

R1

0.1 Ω

N/C

IN

N/C

OUT

DC+

DC−

PACK+

PACK−

TEMP

C1

10 µF

V

CC

3

+

IN

+

−

4

V

CC

VSENSE

AGND

5

ISNS

N/C

6

STAT2

C4

1 µF

C2

0.1 µF

7

APG/THM STAT1

8

EN

TMR SEL

CR

9

Battery

Pack

VSEL

GND

V

CC

C3

0.22 µF

10

N/C

R4

bq24002PWP

500 Ω

D1

D2

R5

500 Ω

R2

18.7 kΩ

R3

95.3 kΩ

Figure 13. Li-Ion/Li-Pol Charger

D

If the TMR SEL pin is left floating (3 HR time), a 10-pF capacitor should be installed between TMR SEL and CR.

If a micro process is monitoring the STAT pins, it may be necessary to add some hysteresis into the feedback

to prevent the STAT pins from cycling while crossing the taper detect threshold (usually less than one half

second). See SLUU083 EVM or SLUU113 EVM for additional resistors used for the STAT pins.

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APPLICATION INFORMATION

FUNCTIONAL DESCRIPTION

The bq2400x supports a precision current- and voltage-regulated Li-Ion charging system suitable for cells with either coke

or graphite anodes. See Figure 14 for a typical charge profile and Figure 15 for an operational flowchart.

Current Regulation

Phase

Voltage Regulation and

Charge TerminationPhase

Preconditioning

Phase

Regulation Voltage

(V

)

OUT

Regulation Current

(I

)

lim

Charge Voltage

Minimum Charge

Voltage (LowV)

Preconditioning

Current (I

PRECHG

)

Charge Current

Taper Detect

22.5 Minutes

Charge Timer (3, 4.5 or 6 Hours)

22.5 Minutes

Figure 14. Typical Charge Profile

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POR

Regulate

(PRECHG)

I

Yes

Reset and Start

22.5 min Timer

V

< V ?

(LOWV)

I(VSENSE)

Indicate Pre−

Charge

No

Reset All Timers,

Start Charge Timer

(TMR SEL input )

Yes

V

> V ?

(OVERV)

I(VSENSE)

No

Regulate Current

or Voltage

Indicate Charge

No

V

< V ?

(LOWV)

I(VSENSE)

Yes

V

> V ?

(OVERV)

I(VSENSE)

No

22.5min Timer

Expired?

No

Yes

Charge timer

Expired?

No

Fault Condition

Indicate Fault

Yes

V

< V ?

(LOWV)

I(VSENSE)

No

POR?

or

APG/THERM toggle?

No

Start 22.5 minute

Timer

or

Yes

Taper

Detected?

EN toggle?

Indicate DONE

Yes

No

22.5min Timer

Expired?

Yes

Turn Off Charge

Indicate DONE

V

< V

?

(HIGHV)

I(VSENSE)

or

No

POR?

or

APG/THERM Toggle?

or

EN Toggle?

Yes

Figure 15. Operational Flow Chart

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SLUS462E − SEPTEMBER 2000 − REVISED NOVEMBER 2004

either the adapter power or the battery temperature using

a thermistor. The bq2400x suspends charge if this input is

outside the limits set by the user. Please refer to the

APG/THERM input section for additional details.

Charge Qualification and Preconditioning

The bq2400x starts a charge cycle when power is applied

while a battery is present. Charge qualification is based on

battery voltage and the APG/THERM input.

APG/THERM Input

The bq400x continuously monitors temperature or system

input voltage by measuring the voltage between the

APG/THERM (adapter power good/thermistor) and GND.

For temperature, a negative- or a positive- temperature

coefficient thermistor (NTC, PTC) and an external voltage

divider typically develop this voltage (see Figure 16). The

As shown in the block diagram, the internal LowV

comparator output prevents fast-charging a deeply

depleted battery. When set, charging current is provided

by a dedicated precharge current source. The precharge

timer limits the precharge duration. The precharge current

also minimizes heat dissipation in the pass element during

the initial stage of charge.

bq2400x compares this voltage against its internal V

TP1

and V

thresholds to determine if charging is allowed.

TP2

The APG/THERM input can also be configured to monitor

(See Figure 17.)

U1

1

2

20

19

18

17

16

15

14

13

12

11

N/C

IN

N/C

OUT

PACK+

PACK−

TEMP

3

IN

OUT

+

−

4

V

CC

VSENSE

AGND

STAT2

5

ISNS

N/C

6

NTC Thermistor

Battery Pack

7

APG/THM STAT1

8

EN

TMR SEL

CR

9

VSEL

GND

C3

0.22 µF

10

N/C

bq24002PWP

RT1

RT2

Figure 16. Temperature Sensing Circuit

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If the charger designs incorporate a thermistor, the resistor

divider RT1 and RT2 is calculated by using the following

two equations.

Where:

V_B= V_CR(bias voltage)

First, calculate RT2.

R_H= Resistance of the thermistor at the desired hot trip

threshold

1

ƪ ƫ

V R R

*

V

B

H

C

H

R_C= Resistance of the thermistor at the desired cold trip

threshold

RT2 +

V

B

H

B

ǒ

_{* 1}Ǔ_{* R}

ǒ Ǔ

R

* 1

V

C

H

C

V_H= VP2 or the lower APG trip threshold

V_C= VP2 or the upper APG trip threshold

RT1 = Top resistor in the divider string

RT2 = Bottom resistor in the divider string

then use the resistor value to find RT1.

V

B

* 1

V

C

RT1 +

1

)

RT2

R

C

U1

V

CC

1

2

20

19

18

17

16

15

14

13

12

11

N/C

IN

N/C

OUT

DC+

3

Vcc

IN

OUT

4

V

CC

VSENSE

AGND

STAT2

Temp Fault

5

ISNS

N/C

6

R1

R2

V_TP1

7

APG/THM STAT1

Normal Temp Range

Temp Fault

8

V_TP2

EN

TMR SEL

CR

9

VSEL

GND

10

DC−

N/C

GND

bq24002PWP

Figure 17. Temperature Threshold

Figure 18. APG Sensing Circuit

Values of resistors R1 and R2 can be calculated using the following equation:

R2

V

+ V

CC

APG

(R1 ) R2)

where V

is the voltage at the APG/THM pin.

APG

Current Regulation

The bq2400x provides current regulation while the battery-pack voltage is less than the regulation voltage. The current

regulation loop effectively amplifies the error between a reference signal, Vilim, and the drop across the external sense

resistor, R

.

SNS

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SLUS462E − SEPTEMBER 2000 − REVISED NOVEMBER 2004

U1

V

CC

1

2

20

19

18

17

16

15

14

13

12

11

N/C

IN

N/C

OUT

R

SNS

DC+

DC−

C1

10 µF

V

CC

3

+

IN

4

V

CC

VSENSE

AGND

5

ISNS

N/C

6

STAT2

C2

0.1 µF

7

APG/THM STAT1

8

EN

TMR SEL

CR

9

VSEL

GND

10

N/C

bq24002PWP

Figure 19. Current Sensing Circuit

Charge current feedback, applied through pin ISNS,

maintains regulation around a threshold of Vilim. The

following formula calculates the value of the sense

resistor:

that in the case of a fault condition, such as an out-of-range

signal on the APG/THERM input or a thermal shutdown,

the bq2400x suspends the timer.

TMRSEL STATE

(1)

CHARGE TIME

3 hours

Vilim

Floating

R

+

SNS

I

REG

Low

6 hours

High

4.5 hours

where I

is the desired charging current.

REG

(1)

To improve noise immunity, it is recommended that a minimum of

10 pF capacitor be tied to Vss on a floating pin.

Voltage Monitoring and Regulation

Minimum Current: The bq2400x monitors the charging

current during the voltage regulation phase. The bq2400x

initiates a 22-minute timer once the current falls below the

taperdet trip threshold. Fast charge is terminated once the

22-minute timer expires.

Voltage regulation feedback is through pin VSENSE. This

input is tied directly to the positive side of the battery pack.

The bq2400x supports cells with either coke (4.1 V) or

graphite (4.2 V) anode. Pin VSEL selects the charge

regulation voltage.

Charge Status Display

VSEL State

(see Note)

CHARGE REGULATION

VOLTAGE

The three available options allow the user to configure the

charge status display for single LED (bq24001), two

individual LEDs (bq24002) or a bicolor LED (bq24003).

The output stage is totem pole for the bq24001 and

bq24003 and open-drain for the bq24002. The following

tables summarize the operation of the three options:

Low

4.1 V

4.2 V

High

NOTE: VSEL should not be left floating.

Table 1. bq24001 (Single LED)

Charge Termination

CHARGE STATE

Precharge

STAT1

ON (LOW)

The bq2400x continues with the charge cycle until

termination by one of the two possible termination

conditions:

Fast charge

ON (LOW)

FAULT

Flashing (1 Hz, 50% duty cycle)

OFF (HIGH)

Maximum Charge Time: The bq2400x sets the maximum

charge time through pin TMRSEL. The TMR SEL pin

allows the user to select between three different total

charge-time timers (3, 4, 5, or 6 hours). The charge timer

is initiated after the preconditioning phase of the charge

and is reset at the beginning of a new charge cycle. Note

Done (>90%)

Sleep-mode

OFF (HIGH)

APG/Therm invalid

Thermal shutdown

Battery absent

OFF (HIGH)

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SLUS462E − SEPTEMBER 2000 − REVISED NOVEMBER 2004

Table 2. bq24002 (2 Individual LEDs)

Table 3. bq24003 (Single Bicolor LED)

LED2

(GREEN)

APPARENT

COLOR

CHARGE STATE LED1 (RED)

STAT2

(GREEN)

CHARGE STATE

STAT1 (RED)

Precharge

Fast charge

FAULT

ON (LOW)

OFF (HIGH)

ON (LOW)

OFF (HIGH)

RED

Precharge

ON (LOW)

OFF

Fast charge

YELLOW

GREEN

OFF

Flashing (1 Hz,

50% duty cycle)

FAULT

OFF

Done (>90%)

Sleep-mode

Done (>90%)

OFF

ON (LOW)

OFF

APG/Therm

invalid

Sleep-mode

OFF (HIGH)

OFF

APG/Therm invalid

Thermal shutdown

Battery absent

OFF

Thermal

shutdown

OFF

(1)

OFF

(1)

OFF (HIGH) OFF (HIGH)

(1)

OFF

Battery absent

(1) If thermistor is used, then the Green LED is off.

Thermal Shutdown

The bq2400x monitors the junction temperature T of the DIE and suspends charging if T exceeds 165°C. Charging

J

resumes when T falls below 155°C.

J

DETAILED DESCRIPTION

POWER FET

VOLTAGE SENSE

The integrated transistor is a P-channel MOSFET. The

power FET features a reverse-blocking Schottky diode,

which prevents current flow from OUT to IN.

To achieve maximum voltage regulation accuracy, the

bq2400x uses the feedback on the VSENSE pin.

Externally, this pin should be connected as close to the

battery cell terminals as possible. For additional safety, a

10kΩ internal pullup resistor is connected between the

VSENSE and OUT pins.

An internal thermal-sense circuit shuts off the power FET

when the junction temperature rises to approximately

165°C. Hysteresis is built into the thermal sense circuit.

After the device has cooled approximately 10°C, the

power FET turns back on. The power FET continues to

cycle off and on until the fault is removed.

ENABLE (EN)

The logic EN input is used to enable or disable the IC. A

high-level signal on this pin enables the bq2400x. A

low-level signal disables the IC and places the device in a

low-power standby mode.

CURRENT SENSE

The bq2400x regulates current by sensing, on the ISNS

pin, the voltage drop developed across an external sense

resistor. The sense resistor must be placed between the

supply voltage (Vcc) and the input of the IC (IN pins).

17

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SLUS462E − SEPTEMBER 2000 − REVISED NOVEMBER 2004

THERMAL INFORMATION

THERMALLY ENHANCED TSSOP-20

DIE

The thermally enhanced PWP package is based on the

20-pin TSSOP, but includes a thermal pad (see

Figure 20) to provide an effective thermal contact between

the IC and the PWB.

Side View (a)

DIE

Traditionally, surface mount and power have been

mutually exclusive terms. A variety of scaled-down

TO220-type packages have leads formed as gull wings to

make them applicable for surface-mount applications.

These packages, however, suffer from several

shortcomings: they do not address the very low profile

requirements (<2 mm) of many of today’s advanced

systems, and they do not offer a pin-count high enough to

accommodate increasing integration. On the other hand,

traditional low-power surface-mount packages require

power-dissipation derating that severely limits the usable

range of many high-performance analog circuits.

End View (b)

Thermal

Pad

The PWP package (thermally enhanced TSSOP)

combines fine-pitch surface-mount technology with

thermal performance comparable to much larger power

packages.

Bottom View (c)

The PWP package is designed to optimize the heat

transfer to the PWB. Because of the very small size and

limited mass of a TSSOP package, thermal enhancement

is achieved by improving the thermal conduction paths that

remove heat from the component. The thermal pad is

formed using a lead-frame design (patent pending) and

manufacturing technique to provide the user with direct

connection to the heat-generating IC. When this pad is

soldered or otherwise coupled to an external heat

dissipator, high power dissipation in the ultrathin,

fine-pitch, surface-mount package can be reliably

achieved.

Figure 20. Views of Thermally Enhanced

PWP Package

Because the conduction path has been enhanced,

power-dissipation capability is determined by the thermal

considerations in the PWB design. For example, simply

adding a localized copper plane (heat-sink surface), which

is coupled to the thermal pad, enables the PWP package

to dissipate 2.5 W in free air. (Reference Figure 22(a), 8

2

cm of copper heat sink and natural convection.)

Increasing the heat-sink size increases the power

dissipation range for the component. The power

dissipation limit can be further improved by adding airflow

to a PWB/IC assembly (see Figure 22(b) and 22(c)). The

2

line drawn at 0.3 cm in Figures 21 and 22 indicates

performance at the minimum recommended heat-sink

size.

18

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SLUS462E − SEPTEMBER 2000 − REVISED NOVEMBER 2004

THERMAL INFORMATION

THERMAL RESISTANCE

vs

COPPER HEAT-SINK AREA

150

125

100

Natural Convection

50 ft/min

100 ft/min

150 ft/min

200 ft/min

75

50

25

250 ft/min

300 ft/min

0 0.3

1

2

3

4

5

6

7

8

2

Copper Heat-Sink Area − cm

Figure 21

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SLUS462E − SEPTEMBER 2000 − REVISED NOVEMBER 2004

THERMAL INFORMATION

3.5

T

A

= 25°C

T

A

= 55°C

300 ft/min

3

2.5

2

3

2.5

2

150 ft/min

300 ft/min

150 ft/min

Natural Convection

1.5

Natural Convection

1

0.5

0

1

0.5

0

2

4

6

8

0

2

4

6

8

0.3

2

Copper Heat-Sink Size − cm

(a)

(b)

3.5

T

A

= 105°C

3

2.5

2

1.5

1

150 ft/min

300 ft/min

Natural Convection

0.5

0

0.3

2

4

6

8

2

Copper Heat-Sink Size − cm

(c)

Figure 22. Power Ratings of the PWP Package at Ambient Temperatures of 25°C, 55°C, and 105°C

20

PACKAGE OPTION ADDENDUM

www.ti.com

8-Dec-2009

PACKAGING INFORMATION

Orderable Device

BQ24001PWP

Status ⁽¹⁾

ACTIVE

Package Package

Pins Package Eco Plan ⁽²⁾Lead/Ball Finish MSL Peak Temp ⁽³⁾

Qty

Type

Drawing

HTSSOP

PWP

20

70 Green (RoHS & CU NIPDAU Level-2-260C-1 YEAR

no Sb/Br)

BQ24001PWPG4

BQ24001PWPR

BQ24001PWPRG4

BQ24001RGWR

BQ24001RGWRG4

BQ24002PWP

HTSSOP

VQFN

PWP

RGW

PWP

RGW

PWP

RGW

70 Green (RoHS & CU NIPDAU Level-2-260C-1 YEAR

no Sb/Br)

2000 Green (RoHS & CU NIPDAU Level-2-260C-1 YEAR

no Sb/Br)

2000 Green (RoHS & CU NIPDAU Level-2-260C-1 YEAR

no Sb/Br)

3000 Green (RoHS & CU NIPDAU Level-2-260C-1 YEAR

no Sb/Br)

VQFN

3000 Green (RoHS & CU NIPDAU Level-2-260C-1 YEAR

no Sb/Br)

HTSSOP

VQFN

70 Green (RoHS & CU NIPDAU Level-2-260C-1 YEAR

no Sb/Br)

BQ24002PWPG4

BQ24002PWPR

BQ24002PWPRG4

BQ24002RGWR

BQ24002RGWRG4

BQ24003PWP

70 Green (RoHS & CU NIPDAU Level-2-260C-1 YEAR

no Sb/Br)

2000 Green (RoHS & CU NIPDAU Level-2-260C-1 YEAR

no Sb/Br)

2000 Green (RoHS & CU NIPDAU Level-2-260C-1 YEAR

no Sb/Br)

3000 Green (RoHS & CU NIPDAU Level-2-260C-1 YEAR

no Sb/Br)

VQFN

3000 Green (RoHS & CU NIPDAU Level-2-260C-1 YEAR

no Sb/Br)

HTSSOP

VQFN

70 Green (RoHS & CU NIPDAU Level-2-260C-1 YEAR

no Sb/Br)

BQ24003PWPG4

BQ24003PWPR

BQ24003PWPRG4

BQ24003RGWR

BQ24003RGWRG4

70 Green (RoHS & CU NIPDAU Level-2-260C-1 YEAR

no Sb/Br)

2000 Green (RoHS & CU NIPDAU Level-2-260C-1 YEAR

no Sb/Br)

2000 Green (RoHS & CU NIPDAU Level-2-260C-1 YEAR

no Sb/Br)

3000 Green (RoHS & CU NIPDAU Level-2-260C-1 YEAR

no Sb/Br)

VQFN

3000 Green (RoHS & CU NIPDAU Level-2-260C-1 YEAR

no Sb/Br)

⁽¹⁾The marketing status values are defined as follows:

ACTIVE: Product device recommended for new designs.

LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect.

NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in

a new design.

PREVIEW: Device has been announced but is not in production. Samples may or may not be available.

OBSOLETE: TI has discontinued the production of the device.

(2)

Eco Plan - The planned eco-friendly classification: Pb-Free (RoHS), Pb-Free (RoHS Exempt), or Green (RoHS & no Sb/Br) - please check

http://www.ti.com/productcontent for the latest availability information and additional product content details.

TBD: The Pb-Free/Green conversion plan has not been defined.

Pb-Free (RoHS): TI's terms "Lead-Free" or "Pb-Free" mean semiconductor products that are compatible with the current RoHS requirements

for all 6 substances, including the requirement that lead not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered

at high temperatures, TI Pb-Free products are suitable for use in specified lead-free processes.

Pb-Free (RoHS Exempt): This component has a RoHS exemption for either 1) lead-based flip-chip solder bumps used between the die and

Addendum-Page 1

PACKAGE OPTION ADDENDUM

www.ti.com

8-Dec-2009

package, or 2) lead-based die adhesive used between the die and leadframe. The component is otherwise considered Pb-Free (RoHS

compatible) as defined above.

Green (RoHS & no Sb/Br): TI defines "Green" to mean Pb-Free (RoHS compatible), and free of Bromine (Br) and Antimony (Sb) based flame

retardants (Br or Sb do not exceed 0.1% by weight in homogeneous material)

(3)

MSL, Peak Temp. -- The Moisture Sensitivity Level rating according to the JEDEC industry standard classifications, and peak solder

temperature.

Important Information and Disclaimer:The information provided on this page represents TI's knowledge and belief as of the date that it is

provided. TI bases its knowledge and belief on information provided by third parties, and makes no representation or warranty as to the

accuracy of such information. Efforts are underway to better integrate information from third parties. TI has taken and continues to take

reasonable steps to provide representative and accurate information but may not have conducted destructive testing or chemical analysis on

incoming materials and chemicals. TI and TI suppliers consider certain information to be proprietary, and thus CAS numbers and other limited

information may not be available for release.

In no event shall TI's liability arising out of such information exceed the total purchase price of the TI part(s) at issue in this document sold by TI

to Customer on an annual basis.

Addendum-Page 2

PACKAGE MATERIALS INFORMATION

www.ti.com

14-Jul-2012

TAPE AND REEL INFORMATION

*All dimensions are nominal

Device

Package Package Pins

Type Drawing

SPQ

Reel

A0

B0

K0

P1

W

Pin1

Diameter Width (mm) (mm) (mm) (mm) (mm) Quadrant

(mm) W1 (mm)

BQ24001PWPR

BQ24001RGWR

BQ24002PWPR

BQ24002RGWR

BQ24003PWPR

BQ24003RGWR

HTSSOP PWP

VQFN RGW

HTSSOP PWP

VQFN RGW

HTSSOP PWP

VQFN RGW

20

2000

3000

2000

3000

2000

3000

330.0

16.4

12.4

16.4

12.4

16.4

12.4

6.95

5.3

7.1

5.3

7.1

5.3

7.1

5.3

1.6

1.5

1.6

1.5

1.6

1.5

8.0

16.0

12.0

16.0

12.0

16.0

12.0

Q1

Q2

Q1

Q2

Q1

Q2

6.95

5.3

6.95

5.3

Pack Materials-Page 1

PACKAGE MATERIALS INFORMATION

www.ti.com

14-Jul-2012

*All dimensions are nominal

Device

Package Type Package Drawing Pins

SPQ

Length (mm) Width (mm) Height (mm)

BQ24001PWPR

BQ24001RGWR

BQ24002PWPR

BQ24002RGWR

BQ24003PWPR

BQ24003RGWR

HTSSOP

VQFN

PWP

RGW

PWP

RGW

PWP

RGW

20

2000

3000

2000

3000

2000

3000

367.0

38.0

35.0

38.0

35.0

38.0

35.0

HTSSOP

VQFN

HTSSOP

VQFN

Pack Materials-Page 2

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Products

Audio

Applications

www.ti.com/audio

amplifier.ti.com

dataconverter.ti.com

www.dlp.com

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e2e.ti.com

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是否无铅：	不含铅	是否Rohs认证：	符合
生命周期：	Active	零件包装代码：	TSSOP
包装说明：	HTSSOP,	针数：	20
Reach Compliance Code：	compliant	ECCN代码：	EAR99
HTS代码：	8542.39.00.01	Factory Lead Time：	1 week
风险等级：	5.13	其他特性：	OPTIONAL TEMPERATURE OR INPUT-POWER MONITORING BEFORE AND DURING CHARGE
可调阈值：	YES	模拟集成电路 - 其他类型：	POWER SUPPLY SUPPORT CIRCUIT
JESD-30 代码：	R-PDSO-G20	JESD-609代码：	e4
长度：	6.5 mm	湿度敏感等级：	2
信道数量：	1	功能数量：	1
端子数量：	20	最高工作温度：	70 °C
最低工作温度：		封装主体材料：	PLASTIC/EPOXY
封装代码：	HTSSOP	封装形状：	RECTANGULAR
封装形式：	SMALL OUTLINE, HEAT SINK/SLUG, THIN PROFILE, SHRINK PITCH	峰值回流温度（摄氏度）：	260
认证状态：	Not Qualified	座面最大高度：	1.2 mm
最大供电电压 (Vsup)：	10 V	最小供电电压 (Vsup)：	4.5 V
标称供电电压 (Vsup)：	5 V	表面贴装：	YES
温度等级：	COMMERCIAL	端子面层：	Nickel/Palladium/Gold (Ni/Pd/Au)
端子形式：	GULL WING	端子节距：	0.65 mm
端子位置：	DUAL	处于峰值回流温度下的最长时间：	NOT SPECIFIED
宽度：	4.4 mm	Base Number Matches：	1

型号	制造商	描述	替代类型	文档
BQ24003PWP	TI	SINGLE-CELL Li-ION CHARGE MANAGEMENT IC FOR PDAs AND INTERNET APPLIANCES	类似代替
BQ24003PWPG4	TI	SINGLE-CELL LI-ION CHARGE MANAGEMENT ICFOR PDAS	类似代替
BQ24003PWPRG4	TI	SINGLE-CELL LI-ION CHARGE MANAGEMENT ICFOR PDAS	类似代替

型号	制造商	描述	价格	文档
BQ24003PWPRG4	TI	SINGLE-CELL LI-ION CHARGE MANAGEMENT ICFOR PDAS	获取价格
BQ24003PWPTR	TI	1-CHANNEL POWER SUPPLY SUPPORT CKT, PDSO20, GREEN, PLASTIC, HTSSOP-20	获取价格
BQ24003RGW	TI	SINGLE-CELL Li-ION CHARGE MANAGEMENT IC FOR PDAs AND INTERNET APPLIANCES	获取价格
BQ24003RGWR	TI	SINGLE-CELL LI-ION CHARGE MANAGEMENT ICFOR PDAS	获取价格
BQ24003RGWRG4	TI	SINGLE-CELL LI-ION CHARGE MANAGEMENT ICFOR PDAS	获取价格
BQ24003RGWTR	TI	暂无描述	获取价格
BQ24004	TI	TWO-CELL Li-ION CHARGE MANAGEMENT IC FOR PDAs AND INTERNET APPLIANCES	获取价格
BQ24004PWP	TI	TWO-CELL Li-ION CHARGE MANAGEMENT IC FOR PDAs AND INTERNET APPLIANCES	获取价格
BQ24004PWPG4	TI	TWO-CELL Li-ION CHARGE MANAGEMENT IC	获取价格
BQ24004PWPR	TI	TWO-CELL Li-ION CHARGE MANAGEMENT IC	获取价格

BQ24003PWPR

BQ24003PWPR 概述

BQ24003PWPR 规格参数

BQ24003PWPR 数据手册

BQ24003PWPR CAD模型

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