BQ24160_V01 [TI]

bq2416xx 2.5A, Dual-Input, Single-Cell Switched-Mode Li-Ion Battery Charger with Power Path Management and I2C Interface;
BQ24160_V01
型号: BQ24160_V01
厂家: TEXAS INSTRUMENTS    TEXAS INSTRUMENTS
描述:

bq2416xx 2.5A, Dual-Input, Single-Cell Switched-Mode Li-Ion Battery Charger with Power Path Management and I2C Interface

电池
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Support &  
Community  
Product  
Folder  
Order  
Now  
Tools &  
Software  
Technical  
Documents  
bq24160, bq24160A, bq24161  
bq24161B, bq24163, bq24168  
SLUSAO0G NOVEMBER 2011REVISED DECEMBER 2015  
bq2416xx 2.5A, Dual-Input, Single-Cell Switched-Mode Li-Ion Battery Charger with Power  
Path Management and I2C Interface  
1 Features  
2 Applications  
1
High-Efficiency Switched-Mode Charger with  
Separate Power Path Control  
Handheld Products  
Portable Media Players  
Portable Equipment  
Instantly Start Up System from a Deeply  
Discharged Battery or No Battery  
Netbook and Portable Internet Devices  
Compatible with MaxLife™ Technology for Faster  
Charging When Used in Conjunction With  
bq27530  
3 Description  
The bq24160, bq24160A, bq24161, bq24161B,  
bq24163, and bq24168 are highly integrated single-  
cell Li-Ion battery charger and system power path  
management devices targeted for space-limited,  
portable applications with high-capacity batteries. The  
single-cell charger has dual inputs which allow  
operation from either a USB port or a higher-power  
input supply (that is, AC adapter or wireless charging  
input) for a versatile solution. The two inputs are fully  
isolated from each other and are easily selectable  
using the I2C interface.  
Dual Input, Integrated FET Charger for up to 2.5-A  
Charging  
20-V input rating, with Overvoltage Protection  
(OVP)  
6.5 V for USB Input up to 1.5 A  
10.5 V for IN input (bq24160, bq24160A,  
bq24161, bq24163) up to 2.5 A  
6.5 V for IN input (bq24168) up to 2.5 A  
Safe and Accurate Battery-Management  
Functions  
The power path management feature allows the  
bq2416xx to power the system from a high-efficiency  
1% Battery Regulation Accuracy  
DC-DC  
converter  
while  
simultaneously  
and  
10% Charge Current Accuracy  
independently charging the battery. The power-path  
management architecture enables the system to run  
with a defective or absent battery pack and enables  
instant system turnon even with a totally discharged  
battery or no battery.  
Charge Parameters Programmed Using I2C  
Interface  
Voltage-Based, NTC Monitoring Input  
JEITA Compatible (bq24160, bq24160A,  
bq24161B, bq24163, bq24168)  
Device Information  
PART NUMBER  
bq2416xx  
PACKAGE  
VQFN (24)  
DSBGA (49)  
BODY SIZE (NOM)  
4.00 mm × 4.00 mm  
2.80 mm × 2.80 mm  
Available in small 2.8-mm × 2.8-mm 49-ball  
WCSP or 4-mm × 4-mm VQFN-24 Packages  
(1) For all available packages, see the orderable addendum at  
the end of the datasheet.  
4 Application Schematic  
IN  
SW  
AC Adapter or  
Wireless Power  
System  
Load  
PMIDI  
USB  
VBUS  
D+  
D–  
BOOT  
SYS  
GND  
PMIDU  
D+  
D–  
BAT  
SDA  
SCL  
HOST  
INT  
TEMP PACK+  
TS  
PGND  
DRV  
+
V
SYS  
PACK–  
1
An IMPORTANT NOTICE at the end of this data sheet addresses availability, warranty, changes, use in safety-critical applications,  
intellectual property matters and other important disclaimers. PRODUCTION DATA.  
 
 
 
 
 
bq24160, bq24160A, bq24161  
bq24161B, bq24163, bq24168  
SLUSAO0G NOVEMBER 2011REVISED DECEMBER 2015  
www.ti.com  
Table of Contents  
9.5 Programming........................................................... 26  
9.6 Register Maps......................................................... 29  
10 Application and Implementation........................ 34  
10.1 Application Information.......................................... 34  
10.2 Typical Application ............................................... 34  
11 Power Supply Recommendations ..................... 38  
11.1 Requirements for SYS Output .............................. 38  
11.2 Requirements for Charging................................... 38  
12 Layout................................................................... 39  
12.1 Layout Guidelines ................................................. 39  
12.2 Layout Example .................................................... 40  
13 Device and Documentation Support ................. 41  
13.1 Related Links ........................................................ 41  
13.2 Community Resources.......................................... 41  
13.3 Trademarks........................................................... 41  
13.4 Electrostatic Discharge Caution............................ 41  
13.5 Glossary................................................................ 41  
1
2
3
4
5
6
7
8
Features.................................................................. 1  
Applications ........................................................... 1  
Description ............................................................. 1  
Application Schematic .......................................... 1  
Revision History..................................................... 2  
Device Comparison Table..................................... 4  
Pin Configuration and Functions......................... 4  
Specifications......................................................... 6  
8.1 Absolute Maximum Ratings ...................................... 6  
8.2 Handling Ratings....................................................... 6  
8.3 Recommended Operating Conditions....................... 6  
8.4 Thermal Information.................................................. 7  
8.5 Electrical Characteristics........................................... 7  
8.6 Typical Characteristics............................................ 10  
Detailed Description ............................................ 12  
9.1 Overview ................................................................. 12  
9.2 Functional Block Diagram ....................................... 13  
9.3 Feature Description................................................. 14  
9.4 Device Functional Modes........................................ 26  
9
14 Mechanical, Packaging, and Orderable  
Information ........................................................... 41  
5 Revision History  
NOTE: Page numbers for previous revisions may differ from page numbers in the current version.  
Changes from Revision F (July 2014) to Revision G  
Page  
Deleted hyperlink to unpublished application note SLUA727............................................................................................... 26  
Changes from Revision E (November 2013) to Revision F  
Page  
Added Handling Rating table, Feature Description section, Device Functional Modes, Application and  
Implementation section, Power Supply Recommendations section, Layout section, Device and Documentation  
Support section, and Mechanical, Packaging, and Orderable Information section................................................................ 1  
Changed the Ordering Information table to the Device Comparison Table ........................................................................... 4  
Changed to VBAD_SOURCE include values for "During Bad Source Detection" ......................................................................... 8  
Changed the Functional Block Diagram. Changed the device numbers above D+/D- and PSEL....................................... 13  
Changed the PWM Controller in Charge Mode section to include the soft-start function.................................................... 15  
Changed the Battery Charging Process section. New text added starting with "The bq2416xx monitors the charging  
current.." ............................................................................................................................................................................... 15  
Changed the Input Source Connected section..................................................................................................................... 16  
Changed the Input Source Connected section..................................................................................................................... 18  
Added the Reverse Boost (Boost Back) Prevention Circuit section..................................................................................... 24  
Changes from Revision D (November 2012) to Revision E  
Page  
Added Feature: Compatible with MaxLife Technology for Faster Charging When Used in Conjunction With bq27530 ....... 1  
Changed From: QFN-24 Package To: VQFN-24 Package throughout the data sheet.......................................................... 1  
2
Submit Documentation Feedback  
Copyright © 2011–2015, Texas Instruments Incorporated  
Product Folder Links: bq24160 bq24160A bq24161 bq24161B bq24163 bq24168  
 
bq24160, bq24160A, bq24161  
bq24161B, bq24163, bq24168  
www.ti.com  
SLUSAO0G NOVEMBER 2011REVISED DECEMBER 2015  
Changes from Revision C (October 2012) to Revision D  
Page  
Changed the Ordering Information table to include the WSCP package for bq24161BRGR and bq24161BYFF................. 4  
Changes from Revision B (September 2012) to Revision C  
Page  
Changed the Ordering Information table to include bq24160A .............................................................................................. 4  
Changes from Revision A (March 2012) to Revision B  
Page  
Changed the Ordering Information table to include bq24161B .............................................................................................. 4  
Changed text From: "battery FET (Q6)" To: "battery FET (Q4)" in the Battery Only Connected section ............................ 18  
Changed From: VWARM < VTS < VHOT To: VWARM > VTS > VHOT, and Changed From: VCOLD < VTS < VCOOL To: VCOLD  
>
VTS > VCOOL in the External NTC Monitoring (TS) section.................................................................................................... 21  
Changed Figure 33 .............................................................................................................................................................. 40  
Changes from Original (November 2011) to Revision A  
Page  
Changed the USB Pin numbers in the YFF pachkage for bq24160/3 From: A5-A6 To: A5-A7............................................. 5  
Changed VBATREG - Voltage regulation accuracy ................................................................................................................... 7  
Changed Figure 21 .............................................................................................................................................................. 34  
Changed Figure 22 .............................................................................................................................................................. 35  
Copyright © 2011–2015, Texas Instruments Incorporated  
Submit Documentation Feedback  
3
Product Folder Links: bq24160 bq24160A bq24161 bq24161B bq24163 bq24168  
D-  
                                                                            
1
2
3
4
5
6
bq24160, bq24160A, bq24161  
bq24161B, bq24163, bq24168  
SLUSAO0G NOVEMBER 2011REVISED DECEMBER 2015  
www.ti.com  
6 Device Comparison Table  
TIMERS  
(Safety and  
Watchdog)  
NTC  
MONITORING  
VBATSHRT/  
IBATSHRT  
(2)  
PART NUMBER(1)  
USB OVP  
IN OVP  
USB DETECTION  
VMINSYS  
3.0V  
50mA  
bq24160  
bq24160A  
bq24161  
bq24161B  
bq24163  
bq24168  
6.5V  
6.5V  
6.5V  
6.5V  
6.5V  
6.5V  
10.5V  
10.5V  
10.5V  
10.5V  
10.5V  
6.5V  
D+/D–  
D+/D–  
Yes  
No  
JEITA  
JEITA  
3.5V  
3.5V  
3.5V  
3.5V  
3.2V  
3.5V  
3.0V  
50mA  
PSEL (0=1.5A,  
1=100mA)  
2.0V  
50mA  
Yes  
Yes  
Yes  
No  
Standard  
JEITA  
PSEL (0=1.5A,  
1=500mA)  
3.0V  
50mA  
2.0V  
50mA  
D+/D–  
JEITA  
PSEL (0=1.5A,  
1=100mA)  
2.0V  
50mA  
JEITA  
(1) Each of the above are available in as YFF and RGE packages with the following options:  
R - tabed and reeled in quantities of 3,000 devices per reel.  
T - taped and reeled in quantities of 250 devices per reel.  
(2) This product is RoHS compatible, including a lead concentration that does not exceed 0.1% of total product weight, and is suitable for  
use in specified lead-free soldering processes. In addition, this product uses package materials that do not contain halogens, including  
bromine (Br) or antimony (Sb) above 0.1% of total product weight.  
7 Pin Configuration and Functions  
RGE Package  
VQFN 24 Pins  
Top View  
18  
17  
16  
15  
14  
SW  
N.C.  
1
2
3
4
5
6
18  
17  
16  
15  
SW  
PGND  
SGND  
D+  
PSEL  
SCL  
PGND  
SGND  
SCL  
bq24161  
bq24161B  
bq241618  
bq24160  
bq24163  
PGND  
SYS  
SDA  
PGND  
DRV  
PGND  
SYS  
SDA  
GND  
DRV  
14  
13  
13 SYS  
SYS  
YFF Package  
WCSP 49 Pins  
Top View  
bq24161  
bq24161B  
bq24168  
bq24160  
bq24163  
(Top View)  
(Top View)  
1
2
3
4
5
6
7
1
2
3
4
5
6
7
IN  
IN  
IN  
PMIDI  
SW  
IN  
USB  
USB  
USB  
IN  
IN  
IN  
IN  
USB  
USB  
USB  
A
B
C
D
E
A
B
C
D
E
PMIDI  
PMIDI  
PMIDI  
PMIDU  
PMIDU  
PMIDU  
PMIDI  
PMIDI  
PMIDI  
PMIDI  
PMIDU  
PMIDU  
PMIDU  
SW  
SW  
SW  
SW  
SW  
SW  
SW  
SW  
SW  
SW  
SW  
SW  
SW  
PGND  
PGND  
PGND  
PGND  
PGND  
BOOT  
PGND  
PGND  
PGND  
PGND  
PGND  
BOOT  
PGND  
PGND  
PGND  
PGND  
PGND  
PGND  
PSEL  
D+  
D-  
CD  
SDA  
SCL  
N.C.  
CD  
SDA  
SCL  
SYS  
BAT  
SYS  
BAT  
SYS  
BAT  
SYS  
BAT  
BGATE  
INT  
DRV  
SYS  
BAT  
SYS  
BAT  
SYS  
BAT  
SYS  
BAT  
BGATE  
INT  
DRV  
F
F
TS  
STAT  
PGND  
TS  
STAT  
PGND  
G
G
4
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Copyright © 2011–2015, Texas Instruments Incorporated  
Product Folder Links: bq24160 bq24160A bq24161 bq24161B bq24163 bq24168  
bq24160, bq24160A, bq24161  
bq24161B, bq24163, bq24168  
www.ti.com  
SLUSAO0G NOVEMBER 2011REVISED DECEMBER 2015  
Pin Functions  
PIN  
NO.  
bq24160, 3  
NO.  
bq24161, 1B, 8  
I/O  
DESCRIPTION  
NAME  
YFF  
RGE  
YFF  
RGE  
BAT  
G1-G4  
11, 12  
G1-G4  
11, 12  
I/O Battery Connection – Connect to the positive terminal of the battery. Additionally, bypass BAT  
to GND with at least a 1μF capacitor.  
BGATE  
F5  
10  
F5  
10  
O
External Discharge MOSFET Gate Connection – BGATE drives an external P-Channel  
MOSFET to provide a very low-resistance discharge path. Connect BGATE to the gate of the  
external MOSFET. BGATE is low during high impedance mode and when no input is connected.  
BOOT  
CD  
E7  
E4  
19  
24  
E7  
E4  
19  
24  
I
I
High Side MOSFET Gate Driver Supply – Connect a 0.01µF ceramic capacitor (voltage rating  
> 10V) from BOOT to SW to supply the gate drive for the high side MOSFETs.  
IC Hardware Chip Disable Input – Drive CD high to place the bq2416xx in high-z mode. Drive  
CD low for normal operation. Do not leave CD unconnected.  
D+  
D–  
E2  
E3  
2
1
I
I
D+ and D– Connections for USB Input Adapter Detection – When a charge cycle is initiated  
by the USB input, and a short is detected between D+ and D–, the USB input current limit is set  
to 1.5A. If a short is not detected, the USB100 mode is selected. The D+/D– detection has no  
effect on the IN input.  
DRV  
F7  
6
F7  
6
O
Gate Drive Supply – DRV is the bias supply for the gate drive of the internal MOSFETs. Bypass  
DRV to PGND with a 1μF ceramic capacitor. DRV may be used to drive external loads up to  
10mA. DRV is active whenever the input is connected and VSUPPLY > VUVLO and VSUPPLY > (VBAT  
+ VSLP  
)
IN  
A1- A4  
F6  
21  
7
A1- A4  
F6  
21  
7
I
Input power supply – IN is connected to the external DC supply (AC adapter or alternate power  
source). Bypass IN to PGND with at least a 1μF ceramic capacitor.  
INT  
O
Status Output – INT is an open-drain output that signals charging status and fault interrupts.  
INT pulls low during charging. INT is high impedance when charging is complete or the charger  
is disabled. When a fault occurs, a 128μs pulse is sent out as an interrupt for the host. INT is  
enabled/disabled using the EN_STAT bit in the control register. Connect INT to a logic rail  
through a 100kΩ resistor to communicate with the host processor.  
PGND  
PMIDI  
D1-D7,  
E1, G7  
5, 15,  
16, 17  
D1-D7,  
E1, G7  
5, 15,  
16, 17  
O
Ground terminal – Connect to the thermal pad (for VQFN only) and the ground plane of the  
circuit.  
B1-B4  
B5-B7  
20  
23  
B1-B4  
B5-B7  
E2  
20  
23  
2
Reverse Blocking MOSFET and High Side MOSFET Connection Point for High Power  
Input – Bypass PMIDI to GND with at least a 4.7μF ceramic capacitor. Use caution when  
connecting an external load to PMIDI. The PMIDI output is not current limited. Any short on  
PMIDI will damage the IC.  
PMIDU  
PSEL  
O
Reverse Blocking MOSFET and High Side MOSFET Connection Point for USB Input –  
Bypass PMIDU to GND with at least a 4.7μF ceramic capacitor. Use caution when connecting an  
external load to PMIDU. The PMIDU output is not current limited. Any short on PMIDU will  
damage the IC.  
USB Source Detection Input – Drive PSEL high to indicate that a USB source is connected to  
the USB input. When PSEL is high, the IC starts up with a 100mA (bq24161/8) or 500mA  
(bq24161B) input current limit for USB. Drive PSEL low to indicate that an AC Adapter is  
connected to the USB input. When PSEL is low, the IC starts up with a 1.5A input current limit  
for USB. PSEL has no effect on the IN input. Do not leave PSEL unconnected.  
I2C Interface Clock – Connect SCL to the logic rail through a 10kΩ resistor.  
I2C Interface Data – Connect SDA to the logic rail through a 10kΩ resistor.  
SCL  
E6  
E5  
G6  
3
4
8
E6  
E5  
G6  
3
4
8
I
SDA  
STAT  
I/O  
O
Status Output – STAT is an open-drain output that signals charging status and fault interrupts.  
STAT pulls low during charging. STAT is high impedance when charging is complete or the  
charger is disabled. When a fault occurs, a 128μs pulse is sent out as an interrupt for the host.  
STAT is enabled /disabled using the EN_STAT bit in the control register. Pull STAT up to a logic  
rail thruogh an LED for visual indication or through a 10kΩ resistor to communicate with the host  
processor.  
SW  
C1-C7  
F1-F4  
18  
C1-C7  
F1-F4  
18  
O
I
Inductor Connection – Connect to the switched side of the external inductor.  
SYS  
13, 14  
13,14  
System Voltage Sense and Charger FET Connection – Connect SYS to the system output at  
the output bulk capacitors. Bypass SYS locally with at least 10μF. A 47μF bypass capacitor is  
recommended for optimal transient response.  
TS  
G5  
9
G5  
9
I
Battery Pack NTC Monitor – Connect TS to the center tap of a resistor divider from DRV to  
GND. The NTC is connected from TS to GND. The TS function provides 4 thresholds for JEITA  
compatibility (160, 161B, 163, 168 only). TS faults are reported by the I2C interface. See the  
NTC Monitor section for more details on operation and selecting the resistor values. Connect TS  
to DRV to disable the TS function.  
USB  
A5-A7  
22  
A5-A7  
22  
I
USB Input Power Supply – USB is connected to the external DC supply (AC adapter or USB  
port). Bypass USB to PGND with at least a 1μF ceramic capacitor.  
Thermal  
Pad  
Pad  
Pad  
There is an internal electrical connection between the exposed thermal pad and the PGND pin  
of the device. The thermal pad must be connected to the same potential as the PGND pin on the  
printed circuit board. Do not use the thermal pad as the primary ground input for the device.  
PGND pin must be connected to ground at all times.  
Copyright © 2011–2015, Texas Instruments Incorporated  
Submit Documentation Feedback  
5
Product Folder Links: bq24160 bq24160A bq24161 bq24161B bq24163 bq24168  
bq24160, bq24160A, bq24161  
bq24161B, bq24163, bq24168  
SLUSAO0G NOVEMBER 2011REVISED DECEMBER 2015  
www.ti.com  
8 Specifications  
8.1 Absolute Maximum Ratings  
over operating free-air temperature range (unless otherwise noted)(1)  
MIN  
–2  
MAX  
20  
20  
12  
7
UNIT  
V
IN, USB  
PMIDI, PMIDU, BOOT  
–0.3  
–0.7  
–0.3  
–0.3  
4.5  
V
Pin voltage range (with  
respect to VSS)  
SW  
V
SDA, SCL, SYS, BAT, STAT, BGATE, DRV, TS, D+, D–, INT, PSEL, CD  
V
BOOT to SW  
7
V
SW  
A
Output current (Continuous)  
SYS, BAT  
IN  
3.5  
A
2.75  
1.75  
10  
A
Input current (Continuous)  
Output sink current  
USB  
STAT  
INT  
A
mA  
mA  
°C  
°C  
° C  
1
Operating free-air temperature range  
Junction temperature, TJ  
–40  
–40  
300  
85  
125  
Lead temperature (soldering, 10 s)  
(1) Stresses beyond those listed under absolute maximum ratings may cause permanent damage to the device. These are stress ratings  
only, and functional operation of the device at these or any other conditions beyond those indicated under recommended operating  
conditions is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. All voltage  
values are with respect to the network ground terminal unless otherwise noted.  
8.2 Handling Ratings  
MIN  
MAX  
150  
2
UNIT  
°C  
Tstg  
Storage temperature range  
–65  
Human body model (HBM), per ANSI/ESDA/JEDEC JS-001, all  
pins(1)  
kV  
V(ESD)  
Electrostatic discharge  
Charged device model (CDM), per JEDEC specification  
JESD22-C101, all pins(2)  
500  
V
(1) JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.  
(2) JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process.  
8.3 Recommended Operating Conditions  
over operating free-air temperature range (unless otherwise noted)  
MIN  
4.2  
MAX UNIT  
IN voltage range  
18  
VIN  
IN operating voltage range (bq24160/1/3)  
IN operating voltage range (bq24168)  
USB voltage range  
4.2  
4.2  
4.2  
4.2  
10  
6
V
18  
6
VUSB  
V
USB operating range  
IIN  
Input current, IN input  
2.5  
1.5  
3
A
A
IUSB Input current USB input  
ISYS Output Current from SW, DC  
A
Charging  
2.5  
2.5  
125  
A
IBAT  
Discharging, using internal battery FET  
A
TJ  
Operating junction temperature range  
0
ºC  
6
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Copyright © 2011–2015, Texas Instruments Incorporated  
Product Folder Links: bq24160 bq24160A bq24161 bq24161B bq24163 bq24168  
bq24160, bq24160A, bq24161  
bq24161B, bq24163, bq24168  
www.ti.com  
SLUSAO0G NOVEMBER 2011REVISED DECEMBER 2015  
8.4 Thermal Information  
bq2416xx  
UNIT  
THERMAL METRIC(1)  
49 PINS (YFF)  
24 PINS (RGE)  
θJA  
Junction-to-ambient thermal resistance  
Junction-to-case (top) thermal resistance  
Junction-to-board thermal resistance  
49.8  
0.2  
1.1  
1.1  
6.6  
n/a  
32.6  
30.5  
3.3  
°C/W  
°C/W  
°C/W  
°C/W  
°C/W  
°C/W  
θJCtop  
θJB  
ψJT  
Junction-to-top characterization parameter  
Junction-to-board characterization parameter  
Junction-to-case (bottom) thermal resistance  
0.4  
ψJB  
9.3  
θJCbot  
2.6  
(1) For more information about traditional and new thermal metrics, see the IC Package Thermal Metrics application report, SPRA953.  
8.5 Electrical Characteristics  
Circuit of Figure 21, VSUPPLY = VUSB or VIN (whichever is supplying the IC), VUVLO < VSUPPLY < VOVP and VSUPPLY > VBAT+VSLP, TJ  
= -40°C – 125°C and TJ = 25ºC for typical values (unless otherwise noted)  
PARAMETER  
TEST CONDITIONS  
MIN  
TYP  
MAX  
UNIT  
INPUT CURRENTS  
PWM switching  
15  
mA  
VUVLO < VSUPPLY < VOVP and  
VSUPPLY > VBAT+VSLP  
ISUPPLY  
Supply current for control (VIN or VUSB  
)
PWM NOT switching  
5
175  
5
0°C < TJ < 85°C, High-Z Mode  
μA  
μA  
IBATLEAK  
IBAT_HIZ  
Leakage current from BAT to the Supply  
0°C < TJ < 85°C, VBAT = 4.2V, VUSB = VIN = 0V  
0°C< TJ < 85°C, VBAT = 4.2V, VSUPPLY = 5V or 0V,  
SCL, SDA = 0 V or 1.8V, High-Z Mode  
Battery discharge current in High Impedance mode,  
(BAT, SW, SYS)  
55  
μA  
POWER-PATH MANAGEMENT  
bq24160, 1, 1B, 8  
bq24163  
3.60  
3.3  
3.7  
3.4  
3.82  
3.5  
Charge Enabled, VBAT < VMINSYS  
VSYS(REG)  
System regulation voltage  
V
VBATREG  
+ 1.5%  
VBATREG  
+ 3.0%  
VBATREG  
+ 4.17%  
Battery FET turned off (Charge Disabled, TS Fault or  
Charging Terminated)  
bq24160, 1, 1B, 8  
3.4  
3.1  
3.5  
3.2  
3.62  
3.3  
V
V
Charge enabled, VBAT < VMINSYS  
Input current limit or VINDPM active  
,
VMINSYS  
Minimum system regulation voltage  
Enter supplement mode threshold  
bq24163  
VBAT  
–30mV  
VBSUP1  
VBAT > 2.5V  
V
VBAT  
–10mV  
VBSUP2  
Exit supplement mode threshold  
VBAT > 2.5V  
V
A
ILIM(discharge)  
tDGL(SC1)  
Current limit, discharge or supplement mode  
Current monitored in internal FET only.  
7
Deglitch time, SYS short circuit during discharge or  
supplement mode  
Measured from (VBAT – VSYS) = 300mV to BAT high-  
impedance  
250  
μs  
Recovery time, SYS short circuit during discharge or  
supplement mode  
tREC(SC1)  
60  
ms  
V
Battery range for BGATE and supplement mode  
operation  
2.5  
4.5  
BATTERY CHARGER  
YFF pkg  
RGE pkg  
37  
50  
57  
70  
Measured from BAT to SYS,  
VBAT = 4.2V  
RON(BAT-SYS) Internal battery charger MOSFET on-resistance  
mΩ  
Charge Voltage  
Operating in voltage regulation, Programmable range  
3.5  
–1%  
550  
4.44  
1%  
V
VBATREG  
Voltage regulation accuracy  
Fast charge current range  
Fast charge current accuracy  
VBATSHRT VBAT < VBAT(REG) programmable range  
2500  
+10%  
2.1  
mA  
ICHARGE  
0°C to 125°C  
–10%  
1.9  
bq24161, 3, 8  
bq24160, 1B  
2.0  
3.0  
50  
VBATSHRT  
Battery short circuit threshold  
100mV Hysteresis  
VBAT < VBATSHRT  
V
2.9  
3.1  
IBATSHRT  
Battery short circuit current  
mA  
ms  
Deglitch time for battery short circuit to fastcharge  
transition  
tDGL(BATSHRT)  
32  
ITERM = 50mA  
–35%  
–15%  
+35%  
+15%  
ITERM  
Termination charge current accuracy  
ITERM 100mA  
tDGL(TERM)  
VRCH  
Deglitch time for charge termination  
Recharge threshold voltage  
Deglitch time  
Both rising and falling, 2mV overdrive, tRISE, tFALL = 100ns  
Below VBATREG  
32  
120  
32  
ms  
mV  
ms  
tDGL(RCH)  
VBAT falling below VRCH, tFALL=100ns  
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Electrical Characteristics (continued)  
Circuit of Figure 21, VSUPPLY = VUSB or VIN (whichever is supplying the IC), VUVLO < VSUPPLY < VOVP and VSUPPLY > VBAT+VSLP, TJ  
= -40°C – 125°C and TJ = 25ºC for typical values (unless otherwise noted)  
PARAMETER  
TEST CONDITIONS  
During battery detection source cycle  
During battery detection sink cycle  
Termination enabled (EN_TERM = 1)  
MIN  
TYP  
3.3  
3.0  
2.5  
MAX  
UNIT  
VDETECT  
Battery detection threshold  
V
IDETECT  
Battery detection current before charge done (sink  
current)  
mA  
tDETECT  
VIH  
Battery detection time  
Termination enabled (EN_TERM = 1)  
250  
ms  
V
PSEL, CD Input high logic level  
PSEL, CD Input low logic level  
1.3  
VIL  
0.4  
V
INPUT CURRENT LIMITING  
IUSBLIM = USB100  
90  
450  
135  
800  
700  
1250  
1.35  
2.3  
95  
475  
100  
500  
150  
900  
800  
1500  
1.65  
2.8  
IUSBLIM = USB500  
IUSBLIM = USB150  
IUSBLIM = USB900  
IUSBLIM = USB800  
IUSBLIM = 1.5A  
142.5  
850  
USB charge mode, VUSB = 5V,  
DC Current pulled from SW  
IIN_USB  
Input current limit threshold (USB input)  
mA  
750  
1400  
1.5  
IN charge mode, VIN = 5V,  
DC Current pulled from SW  
IINLIM = 1.5A  
IIN_IN  
Input current limit threshold (IN input)  
A
V
IINLIM = 2.5A  
2.5  
Charge mode, programmable via I2C, both inputs  
VIN_DPM  
Input based DPM threshold range  
VIN_DPM threshold accuracy  
4.2  
4.76  
–2  
+2%  
5.45  
450  
VDRV BIAS REGULATOR  
VDRV  
Internal bias regulator voltage  
VSUPPLY > 5.45V  
5
5.2  
V
IDRV  
DRV output current  
10  
mA  
mV  
VDO_DRV  
DRV Dropout voltage (VSUPPLY – VDRV  
)
ISUPPLY = 1A, VSUPPLY = 5V, IDRV = 10mA  
STATUS OUTPUT (STAT, INT)  
VOL  
Low-level output saturation voltage  
IO = 10mA, sink current  
VSTAT = VINT = 5V  
0.4  
1
V
IIH  
High-level leakage current  
µA  
PROTECTION  
VUVLO  
IC active threshold voltage  
IC active hysteresis  
VIN rising  
3.6  
120  
0
3.8  
150  
40  
4
V
VUVLO_HYS  
VSLP  
VIN falling from above VUVLO  
2.0V VBAT VBATREG, VIN falling  
2.0V VBAT VBATREG  
mV  
mV  
mV  
ms  
Sleep-mode entry threshold, VSUPPLY-VBAT  
Sleep-mode exit hysteresis  
100  
175  
VSLP_EXIT  
40  
100  
30  
Deglitch time for supply rising above VSLP+VSLP_EXIT  
Rising voltage, 2mV over drive, tRISE = 100ns  
After Bad Source Detection completes  
VIN_DPM  
– 80 mV  
V
VBAD_SOURCE Bad source detection threshold  
During Bad Source Detection  
VIN_DPM  
+ 80 mV  
V
tDGL(BSD)  
Deglitch on bad source detection  
Input supply OVP threshold voltage  
32  
6.5  
ms  
USB, VUSB Rising  
6.3  
10.3  
6.3  
6.7  
10.7  
6.7  
VOVP  
IN, VIN Rising (bq24160/1/1B/3)  
IN, VIN Rising (bq24168)  
Supply falling from VOVP  
10.5  
6.5  
V
VOVP(HYS)  
VBOVP  
VOVP hysteresis  
100  
mV  
V
1.025 ×  
VBATREG  
1.05 ×  
VBATREG  
1.075 ×  
VBATREG  
Battery OVP threshold voltage  
VBAT threshold over VOREG to turn off charger during charge  
Lower limit for VBAT falling from above VBOVP  
% of  
VBATREG  
VBOVP hysteresis  
1
1
tDGL(BOVP)  
Battery OVP deglitch  
BOVP fault shown in register once tDGL(BOVP) expires.  
ms  
Buck converter shut down immediately when VBAT > VBATOVP  
VBATUVLO  
ILIMIT  
Battery undervoltage lockout threshold  
Cycle-by-cycle current limit  
Thermal trip  
VBAT rising, 100mV hysteresis  
VSYS shorted  
2.5  
4.9  
165  
10  
V
A
4.1  
5.6  
TSHTDWN  
°C  
Thermal hysteresis  
TREG  
Thermal regulation threshold  
Safety timer accuracy  
Charge current begins to cut off  
(bq24160/1/1B/3 Only)  
120  
°C  
–20%  
20%  
PWM  
IIN_LIMIT = 500mA, Measured from USB to PMIDU  
IIN_LIMIT = 500mA, Measured from IN to PMIDI  
95  
45  
175  
80  
Internal top reverse blocking MOSFET on-resistance  
mΩ  
8
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SLUSAO0G NOVEMBER 2011REVISED DECEMBER 2015  
Electrical Characteristics (continued)  
Circuit of Figure 21, VSUPPLY = VUSB or VIN (whichever is supplying the IC), VUVLO < VSUPPLY < VOVP and VSUPPLY > VBAT+VSLP, TJ  
= -40°C – 125°C and TJ = 25ºC for typical values (unless otherwise noted)  
PARAMETER  
TEST CONDITIONS  
MIN  
TYP  
100  
65  
MAX  
175  
110  
115  
1.65  
UNIT  
Measured from PMIDU to SW  
Internal top N-channel Switching MOSFET on-  
resistance  
mΩ  
Measured from PMIDI to SW  
Measured from SW to PGND  
Internal bottom N-channel MOSFET on-resistance  
Oscillator frequency  
65  
mΩ  
fOSC  
1.35  
0%  
1.50  
95%  
MHz  
DMAX  
DMIN  
Maximum duty cycle  
Minimum duty cycle  
BATTERY-PACK NTC MONITOR  
VHOT  
High temperature threshold  
VTS falling  
29.7  
37.9  
56  
30  
1
30.5  
39.6  
56.9  
60.4  
73  
%VDRV  
%VDRV  
%VDRV  
%VDRV  
VHYS(HOT)  
VWARM  
VHYS(WARM)  
VCOOL  
VHYS(COOL)  
VCOLD  
Hysteresis on high threshold  
High temperature threshold  
Hysteresis on high threshold  
Low temperature threshold  
Hysteresis on low threshold  
Low temperature threshold  
Hysteresis on low threshold  
TS Disable threshold  
VTS rising  
VTS falling  
38.3  
1
VTS rising  
VTS falling  
56.5  
1
VTS rising  
VTS falling  
59.5  
70  
60  
1
VHYS(COLD)  
TSOFF  
tDGL(TS)  
VTS rising  
VTS rising, 2%VDRV hysteresis  
%VDRV  
ms  
Deglitch time on TS change  
50  
0.6  
D+/D– DETECTION (bq24160)  
VD+_SRC  
ID+_SRC  
ID-_SINK  
ID_LKG  
D+ Voltage Source  
0.5  
7
0.7  
14  
150  
1
V
µA  
µA  
µA  
µA  
V
D+ Connection Check Current Source  
D- Current Sink  
50  
100  
D–, switch open  
D+, switch open  
–1  
Leakage Current into D+/D-  
–1  
1
VD+_LOW  
D+ Low Comparator Threshold  
D- Low Comparator Threshold  
D- Pulldown for Connection Check  
0.8  
250  
14.25  
VD-_LOWdatref  
RD-_DWN  
BATGD OPERATION  
VBATGD Good Battery threshold  
Deglitch for good battery threshold  
I2C COMPATIBLE INTERFACE  
400  
mV  
kΩ  
24.8  
3.6  
1.3  
3.8  
32  
3.9  
V
VBAT rising to HIGH-Z mode, DEFAULT Mode Only  
ms  
VIH  
Input low threshold level  
VPULL-UP = 1.8V, SDA and SCL  
VPULL-UP = 1.8V, SDA and SCL  
IL = 10mA, sink current  
V
V
VIL  
Input low threshold level  
Output low threshold level  
High-Level leakage current  
Watchdog timer timeout  
0.4  
0.4  
VOL  
V
IBIAS  
VPULL-UP = 1.8V, SDA and SCL  
(bq24160/1/3 Only)  
1
μA  
s
tWATCHDOG  
30  
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SLUSAO0G NOVEMBER 2011REVISED DECEMBER 2015  
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8.6 Typical Characteristics  
100  
90  
80  
70  
60  
50  
40  
30  
20  
10  
0
100  
90  
80  
70  
60  
50  
40  
30  
20  
10  
0
VIN = 5 V  
VIN = 7 V  
VIN = 9 V  
VUSB = 5 V  
VUSB = 6 V  
0.1  
1
3
0.1  
1
2
System Current (A)  
System Current (A)  
G001  
G002  
Charge Disabled  
SYS loaded  
Charge Disabled  
SYS loaded  
VBATREG = 3.6V  
IN2500 ILIM  
VBATREG = 3.6V  
USB1500 ILIM  
Figure 1. IN Efficiency  
Figure 2. USB Efficiency  
3.9  
3.85  
3.8  
4.21  
4.208  
4.206  
4.204  
4.202  
4.2  
SYSREG Regulation  
MINSYS Regulation  
3.75  
3.7  
3.65  
3.6  
4.198  
4.196  
4.194  
4.192  
3.55  
3.5  
3.45  
3.4  
−50  
4.19  
0
0
50  
Temperature (°C)  
100  
150  
25  
50  
75  
100  
125  
Temperature (°C)  
G003  
G004  
VBAT = 3V  
VBATREG = 4.2V  
No load  
Termination Disabled  
Figure 3. SYSREG and MINSYS Regulation vs Temperature  
Figure 4. Battery Regulation vs Temperature  
700  
6.7  
6.6  
6.5  
6.4  
6.3  
6.2  
6.1  
6
USB100 Current Limit  
USB500 Current Limit  
Falling Edge  
Rising Edge  
600  
500  
400  
300  
200  
100  
0
−50  
0
50  
Temperature (°C)  
100  
150  
−50  
0
50  
100  
150  
Temperature (°C)  
G005  
G006  
USB100 and USB500 current limit  
VUSB = 5V  
USB input and IN input (bq24168)  
VBAT = 3.6V  
Figure 5. USB Input Current Limit vs. Temperature  
Figure 6. 6.5V OVP Threshold vs. Temperature  
10  
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SLUSAO0G NOVEMBER 2011REVISED DECEMBER 2015  
Typical Characteristics (continued)  
10.7  
2.1  
2.09  
2.08  
2.07  
2.06  
2.05  
2.04  
2.03  
2.02  
2.01  
2
Falling Edge  
Rising Edge  
10.6  
10.5  
10.4  
10.3  
10.2  
10.1  
10  
−50  
0
50  
100  
150  
2
2.5  
3
3.5  
4
4.5  
Temperature (°C)  
Battery Voltage (V)  
G007  
G008  
ICHARGE = 2A  
VIN = 5V  
VBATREG = 4.44V  
Figure 7. 10.5V OVP Threshold vs. Temperature  
Figure 8. Charge Current vs. Battery Voltage  
0.055  
0.054  
0.053  
0.052  
0.051  
0.05  
0
0.5  
1
1.5  
2
2.5  
3
Battery Voltage (V)  
G009  
Figure 9. IBATSHRT vs. Battery Voltage  
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9
Detailed Description  
9.1 Overview  
The bq24160/bq24160A/bq24161/bq24161B/bq24163/bq24168 devices are highly integrated single-cell Li-Ion  
battery chargers and system power path management devices targeted for space-limited, portable applications  
with high-capacity batteries. The dual-input, single-cell charger operates from either a USB port or alternate  
power source (that is, wall adapter or wireless power input) for a versatile solution.  
The power path management feature allows the bq2416xx to power the system from a high-efficiency DC-DC  
converter while simultaneously and independently charging the battery. The charger monitors the battery current  
at all times and reduces the charge current when the system load requires current above the input current limit.  
This allows proper charge termination and enables the system to run with a defective or absent battery pack.  
Additionally, this enables instant system turnon even with a totally discharged battery or no battery. The power-  
path management architecture also permits the battery to supplement the system current requirements when the  
adapter cannot deliver the peak system currents. This enables the use of a smaller adapter. The 2.5-A current  
capability allows for GSM phone calls as soon as the adapter is plugged in regardless of the battery voltage. The  
charge parameters are programmable using the I2C interface.  
12  
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SLUSAO0G NOVEMBER 2011REVISED DECEMBER 2015  
9.2 Functional Block Diagram  
PMIDU  
PMIDI  
5.2-V Reference  
DRV  
IN  
Q1  
USB  
5A  
BOOT  
CbC Current  
Limit  
IN IINLIM  
USB IUSBLIM  
IN VINDPM  
DC-DC CONVERTER  
PWM LOGIC,  
COMPENSATION  
AND  
BATTERY FET CONTROL  
Q2  
USB VINDPM  
VSYS(REG)  
IBAT(REG)  
SW  
VBAT(REG)  
DIE Temp  
Regulation  
Q3  
PGND  
SYS  
VSUPPLY  
SUPPLY_SEL  
Termination  
References  
+
VUSB  
Reference  
VUSBOVP  
+
IBAT  
OVP Comparators  
+
Q4  
Termination Comparator  
VIN  
BAT  
VINOVP  
Recharge Comparator  
+
VBATREG – 0.12V  
Start Recharge  
Cycle  
+
VBAT  
VUSB  
VSYSREG Comparator  
VBAT + VSLP  
+
VSYS  
Enable Linear  
Charge  
Sleep Comparators  
+
VMINSYS  
VIN  
+
VBAT  
Good Battery  
Circuit  
VBAT + VSLP  
Hi-Z Mode  
BGATE  
VBATGD  
VBATSC Comparator  
CD  
Hi-Z Mode  
+
Enable  
IBATSHRT  
VBAT  
VBATSHRT  
SDA  
I2C  
Interface  
Supplement Comparator  
+
+
VSYS  
SCL  
VBAT  
VBSUP  
VDRV  
bq24160, 60A, 3  
VBOVP Comparator  
+
USB  
VBAT  
D+  
D–  
Adapter  
Detection  
Circuitry  
1.5A/USB100  
VBATOVP  
+
+
DISABLE  
1C/0.5C  
TS COLD  
TS COOL  
bq24161, 1B, 8  
PSEL  
bq24160/2/3  
+
+
VBATREG – 0.14V  
DISABLE  
STAT  
INT  
TS WARM  
TS HOT  
CHARGE  
CONTROLLER  
with Timers (160/1/3)  
TS  
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9.3 Feature Description  
9.3.1 Charge Mode Operation  
9.3.1.1 Charge Profile  
The internal battery MOSFET is used to charge the battery. When the battery is above the MINSYS voltage, the  
internal FET is on to maximize efficiency and the PWM converter regulates the charge current into the battery.  
When battery is less than MINSYS, the SYS is regulated to VSYS(REG) and battery is charged using the battery  
FET to regulate the charge current. There are 5 loops that influence the charge current:  
Constant current loop (CC)  
Constant voltage loop (CV)  
Thermal-regulation loop  
Minimum system-voltage loop (MINSYS)  
Input-voltage dynamic power-management loop (VIN-DPM)  
During the charging process, all five loops are enabled and the one that is dominant takes control. The bq2416xx  
supports a precision Li-Ion or Li-Polymer charging system for single-cell applications. The Dynamic Power Path  
Management (DPPM) feature regulates the system voltage to a minimum of VMINSYS, so that startup is enabled  
even for a missing or deeply discharged battery. Figure 10 shows a typical charge profile including the minimum  
system output voltage feature.  
Voltage Regulation  
Phase  
Precharge  
Phase  
Current Regulation  
Phase  
Regulation  
voltage  
Charge Current  
Regulation  
Threshold  
System Voltage  
V
SYS  
V
BATSHORT  
Battery  
Voltage  
Charge Current  
Termination  
Current  
Threshold  
I
BATSHORT  
Linear Charge  
to Maintain  
Battery  
FET  
is OFF  
50mA Precharge to  
Close Pack Protector  
Battery FET is ON  
Minimum  
System  
Voltage  
Figure 10. Typical bq2416xx Charging Profile  
14  
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SLUSAO0G NOVEMBER 2011REVISED DECEMBER 2015  
Feature Description (continued)  
9.3.1.2 PWM Controller in Charge Mode  
The bq2416xx provides an integrated, fixed-frequency 1.5MHz voltage-mode controller to power the system and  
supply the charge current. The voltage loop is internally compensated and provides enough phase margin for  
stable operation, allowing the use of small ceramic capacitors with low ESR. When starting up, the bq2416xx  
uses a "soft-start" function to help limit inrush current. When coming out of High Impedance mode, the bq2416xx  
starts up with the input current limit set to 40% of the value programmed in the I2C register. After 80ms, the input  
current limit threshold steps up in 256µs steps. The steps are 40% to 50%, then 50% to 60%, then 60% to 70%,  
then 70% to 80%, and finally 80% to 100%. After the final step, soft start is complete and will not be restarted  
until the bq2416xx enters High Impedance mode.  
The input scheme for the bq2416xx prevents battery discharge when the supply voltages are lower than VBAT  
and also isolates the two inputs from each other. The high-side N-MOSFET (Q1/Q2) switches to control the  
power delivered to the output. The DRV LDO provides a supply for the gate drive for the low side MOSFET,  
while a bootstrap circuit (BST) with an external bootstrap capacitor is used to boost up the gate drive voltage for  
Q1 and Q2.  
Both inputs are protected by a cycle-by-cycle current limit that is sensed through the high-side MOSFETs for Q1  
and Q2. The threshold for the current limit is set to a nominal 5A peak current. The inputs also utilize an input  
current limit that limits the current from the power source.  
9.3.2 Battery Charging Process  
Assuming a vaild input source is attached to IN or USB, as soon as a deeply discharged or shorted battery is  
attached to the BAT pin, (VBAT < VBATSHRT), the bq2416xx applies IBATSHRT to close the pack protector switch and  
bring the battery voltage up to acceptable charging levels. During this time, the battery FET is linearly regulated  
and the system output is regulated to VSYS(REG). Once the battery rises above VBATSHRT, the charge current is  
regulated to the value set in the I2C register. The battery FET is linearly regulated to maintain the system voltage  
at VSYS(REG). Under normal conditions, the time spent in this region is a very short percentage of the total  
charging time, so the linear regulation of the charge current does not affect the overall charging efficiency for  
very long. If the die temperature does rise, the thermal regulation circuit reduces the charge current to maintain a  
die temperature less than 120°C. If the current limit for the SYS output is reached (limited by the input current  
limit, or VIN_DPM), the SYS output drops to the VMINSYS output voltage. When this happens, the charge current is  
reduced to provide the system with all the current that is needed while maintaining the minimum system voltage.  
If the charge current is reduced to 0mA, pulling further current from SYS causes the output to fall to the battery  
voltage and enter supplement mode. (See the Dynamic Power Path Management section for more details.)  
Once the battery is charged enough so that the system voltage begins to rise above VSYS(REG), the battery FET is  
turned on fully and the battery is charged with the full programmed charge current set by the I2C interface,  
ICHARGE. The slew rate for the fast-charge current is controlled to minimize current and voltage overshoot during  
transients. The charge current is regulated to ICHARGE until the battery is charged to the regulation voltage. As the  
battery voltage rises above VRCH, the battery regulation loop is activated. This may result in a small step down  
in the charge current as the loops transition between the charge current and charge voltage loops. As the battery  
voltage charges up to the regulation voltage, VBATREG, the charge current is tapered down as shown in Figure 10  
while the SYS output remains connected to the battery. The voltage between the BAT and PGND pins is  
regulated to VBATREG. The bq2416xx is a fixed single-cell voltage version, with adjustable regulation voltage (3.5V  
to 4.44V), programmed using the I2C interface.  
The bq2416xx monitors the charging current during the voltage-regulation phase. If the battery voltage is above  
the recharge threshold and the charge current has naturally tapered down to and remains below termination  
threshold, ITERM, (without disturbance from events like supplement mode) for 32ms, the charger terminates  
charge, turns off the battery charging FET and enters battery detection. Termination is disabled when the charge  
current is reduced by a loop other than the voltage regulation loop or the input current limit is set to 100 mA. For  
example, when the bq2416xx is in half charge due to TS function, reverse boost protection is active, LOW_CHG  
bit is set, or the thermal regulation, VINDPM or input current loops are active, termination will not occur. This  
prevents false termination events. During termination, the system output is regulated to the VSYS(REG) and  
supports the full current available from the input and the battery supplement mode is available. (See the Dynamic  
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Feature Description (continued)  
Power Path Management section for more details.) The termination current level is programmable. When setting  
the termination threshold less than 150mA, the reverse boost protection may trip falsely with load transients and  
very fully charged batteries. This will prevent termination while in the reverse boost protection and may extend  
charge time. To disable the charge current termination, the host sets the charge termination bit (TE) of charge  
control register to 0, refer to I2C section for details.  
A new charge cycle is initiated if CD is low when either  
1. VSUPPLY rises above UVLO while a battery with VBAT < VBATREG - VRCH is attached or  
2. a battery with VBAT < VBATREG - VRCH is attached while VSUPPLY is above UVLO.  
With VSUPPLY above UVLO and V(BAT) < VBOVP, a recharge cycle is initiated when one of the following conditions  
is detected:  
1. The battery voltage falls below the VBAT(REG)-VRCH threshold.  
2. CE bit toggle or RESET bit toggle  
3. Supplement mode event occurs  
4. CD pin or HI-Z bit toggle  
VBAT(REG) should never be programmed less than VBAT. If the battery is ever 5% above the regulation threshold,  
the battery OVP circuit shuts the PWM converter off immediately and the battery FET is turned on to discharge  
the battery to safe operating levels. If the battery OVP condition exists for the 1ms deglitch, a battery OVP fault is  
reported in the I2C status registers. The battery OVP fault is cleared when the battery voltage discharges below  
VRCH or if the IC enters hi-impedance mode (HZ_MODE=1 or CD=1). Always write bq2416xx to high impedance  
mode before changing VBATREG to clear BOVP condition to ensure proper operation.  
If the battery voltage is ever greater than VBATREG (for example, when an almost fully charged battery enters  
the JEITA WARM state due to the TS pin) but less than VBOVP, the reverse boost protection circuitry may activate  
as explained later in this datasheet. If the battery is ever above VBOVP, the buck converter turns off and the  
internal battery FET is turned on. This prevents further overcharging of the battery and allows the battery to  
discharge to safe operating levels. The battery OVP event does not clear until the battery voltage falls below  
VRCH  
.
9.3.3 Battery Detection  
When termination conditions are met, a battery detection cycle is started. During battery detection, IDETECT is  
pulled from VBAT for tDETECT to verify there is a battery. If the battery voltage remains above VDETECT for the full  
duration of tDETECT, a battery is determined to present and the IC enters “Charge Done”. If VBAT falls below  
VDETECT, a “Battery Not Present” fault is signaled and battery detection continues. The next cycle of battery  
detection, the bq2416xx turns on IBATSHORT for tDETECT. If VBAT rises to VDETECT, the current source is turned  
offand after tDETECT, the battery detection continues through another current sink cycle. Battery detection  
continues until charge is disabled or a battery is detected. Once a battery is detected, the fault status clears and  
a new charge cycle begins. Battery detection is not run when termination is disabled.  
9.3.4 Dynamic Power Path Management (DPPM)  
The bq2416xx features a SYS output that powers the external system load connected to the battery. This output  
is active whenever a source is connected to IN, USB or BAT. The following sections discuss the behavior of SYS  
with a source connected to the supply or a battery source only.  
9.3.5 Input Source Connected  
When a valid input source is connected to IN or USB and the bq2416xx is NOT in High Impedance mode, the  
buck converter enters soft-start and turns on to power the load on SYS. The STAT/INT pin outputs a 128µs  
interrupt pulse to alert the host that an input has been connected. The FAULT bits indicate a normal condition,  
and the Supply Status register indicates that a new supply is connected. The CE bit (bit 1) in the control register  
(0x02) indicates whether a charge cycle is initiated. By default, the bq2416xx (CE=0) enables a charge cycle  
when a valid input source is connected. When the CE bit is '1' and a valid input source is connected, the battery  
FET is turned off and the SYS output is regulated to the VSYS(REG) programmed by the VBATREG threshold in the  
I2C register. A charge cycle is initiated when the CE bit is written to a 0 value (cleared).  
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Feature Description (continued)  
When the CE bit is a 0 and a valid source is connected to IN or USB, the buck converter starts up using soft-  
start. A charge cycle is initiated 64ms after the buck converter iniates startup. When VBAT is high enough that  
VSYS > VSYS(REG), the battery FET is turned on and the SYS output is connected to BAT. If the SYS voltage falls  
to VSYS(REG), it is regulated to that point to maintain the system output even with a deeply discharged or absent  
battery. In this mode, the SYS output voltage is regulated by the buck converter and the battery FET linearly  
regulates the charge current into the battery. The current from the supply is shared between charging the battery  
and powering the system load at SYS. The dynamic power-path management (DPPM) circuitry of the bq2416xx  
monitors the current limits continuously, and if the SYS voltage falls to the VMINSYS voltage, it adjusts charge  
current to maintain the minimum system voltage and supply the load on SYS. If the charge current is reduced to  
zero and the load increases further, the bq2416xx enters battery-supplement mode. During supplement mode,  
the battery FET is turned on and the battery supplements the system load.  
When an input is connected with no battery attached and termination enabled, the startup process proceeds as  
normal until the termination deglitch times out. After this, the bq2416xx enters battery detection and waits for a  
battery to be connected. Once a battery is connected and passes battery detection, a new charge cycle begins.  
Once the battery is applied, the HZMODE bit or CD pin must be toggled before writing the BATREG to a higher  
voltage and beginning a new charge cycle. Failure to do this can result in SYS unexpectedly regulating to 15%  
above VBATREG  
.
2000 mA  
1800 mA  
ISYS  
800 mA  
mA  
0
1500 mA  
~850 mA  
IIN  
0mA  
1A  
IBAT  
0mA  
-200 mA  
VSYS(REG)  
VMINSYS  
DPPM loop active  
VOUT  
~3.1V  
Supplement  
Mode  
Figure 11. Example DPPM Response (VSupply=5V, VBAT = 3.1V, 1.5A Input Current Limit)  
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Feature Description (continued)  
9.3.6 Battery Only Connected  
When a battery with voltage greater than VBATUVLO is connected with no input source, the battery FET is turned  
on similar to supplement mode. In this mode, the current is not regulated; however, there is a short circuit current  
limit. If the short circuit limit is reached, the battery FET is turned off for the deglitch time (tDGL(SC1)). After the  
recovery time (tREC(SC1)), the battery FET is turned on to test and see if the short has been removed. If it has not,  
the FET turns off and the process repeats until the short is removed. This process is to protect the internal FET  
from over current. If an external FET is used for discharge, the external FET's body diode prevents the load on  
SYS from being disconnected from the battery. If the battery voltage is less than VBATUVLO, the internal battery  
FET (Q4) remains off and BAT is high-impedance. This prevents further discharging of deeply-discharged  
batteries.  
9.3.7 Battery Discharge FET (BGATE)  
The bq2416xx contains a MOSFET driver to drive the gate of an external discharge FET between the battery and  
the system output. This external FET provides a low impedance path when supplying the system from the  
battery. Connect BGATE to the gate of the external discharge MOSFET. BGATE is on under the following  
conditions:  
1. No input supply connected.  
2. HZ_MODE bit = 1  
3. CD pin = 1  
9.3.8 DEFAULT Mode  
DEFAULT mode is used when I2C communication is not available. DEFAULT mode is entered in the following  
situations:  
1. When the charger is enabled and VBAT< VBATGD before I2C communication is established  
2. When the watchdog timer expires without a reset from the I2C interface and the safety timer has not expired.  
3. When the device comes out of any fault condition (sleep mode, OVP, faulty adapter mode, etc.) before I2C  
communication is established  
In DEFAULT mode, the I2C registers are reset to the default values. The 27-minute safety timer (no timer for  
bq24168) is reset and starts when DEFAULT mode is entered. The default value for VBATREG is 3.6V, and the  
default value for ICHARGE is 1A. The input current limit for the IN input is set to 1.5A. The input current limit for the  
USB input is determined by the D+/D– detection (bq24160/3) or PSEL (bq24161/1B/8). PSEL and D+/D–  
detection have no effect on the IN input. Default mode is exited by programming the I2C interface. Once I2C  
communication is established, PSEL has no effect on the USB input. Note that if termination is enabled and  
charging has terminated, a new charge cycle is NOT initiated when entering DEFAULT mode.  
9.3.9 Safety Timer and Watchdog Timer (bq24160/ bq24161/ bq24161B/ bq24163 only)  
At the beginning of charging process, the bq24160/1/1B/3 starts the safety timer. This timer is active during the  
entire charging process. If charging has not terminated before the safety timer expires, charging is disabled, the  
charge parameters are reset to the default values and the CE bit is written to a “1”. The length of the safety timer  
is selectable using the I2C interface. A single 128μs pulse is sent on the STAT and INT outputs and the STATx  
bits of the status registers are updated in the I2C. In DEFAULT mode, the safety timer can be reset and a new  
charge cycle initiated by input supply power on reset, removing/inserting battery or toggling the CD pin. In HOST  
mode, the CE bit is set to a '1' when the safety timer expires. The CE bit must be cleared to a '0' in order to  
resume charging and clear the safety timer fault. The safety timer duration is selectable using the TMR_X bits in  
the Safety Timer Register/ NTC Monitor register. Changing the safety timer duration resets the safety timer. This  
function prevents continuous charging of a defective battery. During the fast charge (CC) phase, several events  
increase the timer duration by 2X if the EN_2X_TMR bit is set in the register.  
1. The system load current reduces the available charging current.  
2. The input current needed for the fast charge current is limited by the input current loop.  
3. The input current is reduced because the VINDPM loop is preventing the supply from crashing.  
4. The device has entered thermal regulation because the IC junction temperature has exceeded TJ(REG).  
5. The LOW_CHG bit is set.  
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Feature Description (continued)  
6. The battery voltage is less than VBATSHORT.  
7. The battery has entered the JEITA WARM or COLD state via the TS pin  
During these events, the timer is slowed by half to extend the timer and prevent any false timer faults. Starting a  
new charge cycle by VSUPPLY POR or removing/replacing the battery or resuming a charge by toggling the CE  
or HZ_MODE bits, resets the safety timer. Additionally, thermal shutdown events cause the safety timer to reset.  
In addition to the safety timer, the bq24160/1/1B/3 contain a watchdog timer that monitors the host through the  
I2C interface. Once a read/write is performed on the I2C interface, a 30-second timer (tWATCHDOG) is started. The  
30-second timer is reset by the host using the I2C interface. This is done by writing a “1” to the reset bit  
(TMR_RST) in the control register. The TMR_RST bit is automatically set to “0” when the 30-second timer is  
reset. This process continues until the battery is fully charged or the safety timer expires. If the 30-second timer  
expires, the IC enters DEFAULT mode where the default register values are loaded, the safety timer restarts at  
27 minutes and charging continues. The I2C may be accessed again to reinitialize the desired values and restart  
the watchdog timer. The watchdog timer flow chart is shown in Figure 12.  
Start Safety Timer  
Yes  
Safety timer expired?  
fault  
Safety timer  
No  
Charging suspended  
Enter suspended  
STAT = Hi  
Update STAT  
bits  
Yes  
Charge Done?  
ICHG < ITERM  
mode  
Fault indicated in  
STAT registers  
No  
No  
I2C Read/Write  
performed?  
Yes  
Start 30 second  
watchdog timer  
Reset 30 second  
watchdog timer  
STAT = Hi  
Update STAT  
bits  
Yes  
Charge Done?  
ICHG < ITERM  
No  
Yes  
Safety timer  
fault  
Safety timer expired?  
No  
Charging suspended  
Fault indicated in  
STAT registers  
No  
Yes  
Received SW watchdog  
RESET?  
No  
30s timer expired?  
Yes  
Reset to default  
values in I2C  
register  
Restart 27min  
safety timer  
Figure 12. The Watchdog Timer Flow Chart for bq2416xx  
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Feature Description (continued)  
9.3.10 D+, D– Based Adapter Detection for the USB Input (D+, D–, bq24160/0A/3)  
The bq24160/0A/3 contain a D+, D– based adapter detection circuit that is used to program the input current limit  
for the USB input during DEFAULT mode. D+, D– detection is only performed in DEFAULT mode unless forced  
by the D+, D–_EN bit in host mode. Writing to register 2 during detection stops the detection routine.  
By default the USB input current limit is set to 100mA. When a voltage higher than UVLO is applied to the USB  
input, the bq24160/0A/3 performs a charger source identification to determine if it is connected to an SDP (USB  
port) or CDP/DCP (dedicated charger). The first step is D+, D- line connection detection as described in BC1.2.  
Primary detection begins 10ms after the connection detection complete. The primary detection complies with the  
method described in BC1.2. During primary detection, the D+, D- lines are tested to determine if the port is an  
SDP or CDP/DCP. If a CDP/DCP is detected the input current limit is increased to 1.5A, if an SDP is detected  
the current limit remains at 100mA, until changed via the I2C interface. These two steps require at least 90ms to  
complete but if they have not completed within 500ms, the D+, D- detection routine selects 100mA for the  
unknown input source. Secondary detection as described in BC1.2 is not performed.  
Automatic detection is performed only if VD+ and VD– are less than 0.6V to avoid interfering with the USB  
transceiver which may also perform D+, D– detection when the system is running normally. However, D+, D– can  
be initiated at any time by the host by setting the D+, D– EN bit in the Control/Battery Voltage Register to 1. After  
detection is complete the D+, D– EN bit is automatically reset to 0 and the detection circuitry is disconnected  
from the D+, D– pins to avoid interference with USB data transfer.  
When a command is written to change the input current limit in the I2C, this overrides the current limit selected by  
D+/D– detection. D+, D– detection has no effect on the IN input.  
9.3.11 USB Input Current Limit Selector Input (PSEL, bq24161/ 161B/ 168 only)  
The bq24161, bq24161B, and bq24168 contain a PSEL input that is used to program the input current limit for  
USB during DEFAULT mode. Drive PSEL high to indicate that a USB source is connected to the USB input and  
program the 100mA (bq24161/8) or 500mA (bq24161B) current limit for USB. Drive PSEL low to indicate that an  
AC Adapter is connected to the USB input. When PSEL is low, the IC starts up with a 1.5A current limit for USB.  
PSEL has no effect on the IN input. Once an I2C write is done, the PSEL has no effect on the input current limit  
until the watchdog timer expires.  
9.3.12 Hardware Chip Disable Input (CD)  
The bq2416xx contains a CD input that is used to disable the IC and place the bq2416xx into high-impedance  
mode. Drive CD low to enable charge and enter normal operation. Drive CD high to disable charge and place the  
bq2416xx into high-impedance mode. Driving CD high during DEFAULT mode resets the safety timer. Driving  
CD high during HOST mode resets the safety timer and places the bq2416xx into high impedance mode. The  
CD pin has precedence over the I2C control.  
9.3.13 LDO Output (DRV)  
The bq2416xx contains a linear regulator (DRV) that is used to supply the internal MOSFET drivers and other  
circuitry. Additionally, DRV supplies up to 10mA external loads to power the STAT LED or the USB transceiver  
circuitry. The maximum value of the DRV output is 5.45V; ideal for protecting voltage sensitive USB circuits from  
high voltage fluctuations in the supply. The LDO is on whenever a supply is connected to the IN or USB inputs of  
the bq2416xx. The DRV is disabled under the following conditions:  
1. VSUPPLY < UVLO  
2. VSUPPLY < VSLP  
3. Thermal Shutdown  
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Feature Description (continued)  
9.3.14 External NTC Monitoring (TS)  
The I2C interface allows the user to easily implement the JEITA standard for systems where the battery pack  
thermistor is monitored by the host. Additionally, the bq2416xx provides a flexible, voltage based TS input for  
monitoring the battery pack NTC thermistor. The voltage at TS is monitored to determine that the battery is at a  
safe temperature during charging. The bq24160, bq24160A, bq24161B, bq24163, and bq24168 enable the user  
to easily implement the JEITA standard for charging temperature while the bq24161 only monitors the hot and  
cold cutoff temperatures and leaves the JEITA control to the host. The JEITA specification is shown in.  
1°C  
0.5°C  
Portion of spec not covered by TS  
4.25 V  
Implementation on bq24160  
4.15 V  
4.1 V  
T1  
(0°C)  
T2  
(10°C)  
T3 T4  
(45°C) (50°C)  
T5  
(60°C)  
Figure 13. Charge Current During TS Conditions  
To satisfy the JEITA requirements, four temperature thresholds are monitored; the cold battery threshold (TNTC  
<
0°C), the cool battery threshold (0°C < TNTC < 10°C), the warm battery threshold (45°C < TNTC 60°C) and the  
hot battery threshold (TNTC > 60°C). These temperatures correspond to the VCOLD, VCOOL, VWARM, and VHOT  
thresholds. Charging is suspended and timers are suspended when VTS < VHOT or VTS > VCOLD. When VWARM  
>
VTS > VHOT, the battery regulation voltage is reduced by 140mV from the programmed regulation threshold.  
When VCOLD > VTS > VCOOL, the charging current is reduced to half of the programmed charge current.  
The TS function is voltage based for maximum flexibility. Connect a resistor divider from DRV to GND with TS  
connected to the center tap to set the threshold. The connections are shown in Figure 20. The resistor values are  
calculated using the following equations:  
é
ê
ë
ù
ú
1
1
VDRV ´ RCOLD ´ RHOT ´  
-
VCOLD  
V
HOT û  
RLO =  
é
ê
ë
ù
ú
û
é
ê
ë
ù
VDRV  
VDRV  
RHOT ´  
-1 -RCOLD ´  
-1  
ú
VHOT  
VCOLD  
û
(1)  
(2)  
21  
VDRV  
-1  
VCOLD  
RHI =  
1
+
RLO RCOLD  
1
Where:  
VCOLD = 0.60 × VDRV  
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Feature Description (continued)  
VHOT = 0.30 × VDRV  
Where RHOT is the NTC resistance at the hot temperature and RCOLD is the NTC resistance at cold temperature.  
For the bq24160, bq24161B, bq24163, and bq24168, the WARM and COOL thresholds are not independently  
programmable. The COOL and WARM NTC resistances for a selected resistor divider are calculated using the  
following equations:  
RLO ´ 0.564 ´ RHI  
RCOOL =  
RLO - RLO ´ 0.564 - RHI ´ 0.564  
(3)  
RLO ´ 0.383 ´ RHI  
RWARM =  
RLO - RLO ´ 0.383 - RHI ´0.383  
(4)  
VBAT(REG)  
1 x Charge/  
0.5 x Charge  
VDRV  
DISABLE -140 mV  
TS COLD  
+
TS COOL  
TS WARM  
+
+
VDRV  
TS HOT  
+
RHI  
TS  
PACK+  
TEMP  
bq2416x  
RLO  
PACK-  
Figure 14. TS Circuit  
9.3.15 Thermal Regulation and Protection  
During the charging process, to prevent chip overheating, the bq2416xx monitors the junction temperature, TJ, of  
the die and begins to taper down the charge current once TJ reaches the thermal regulation threshold, TREG. The  
charge current is reduced to zero when the junction temperature increases about 10°C above TREG. Once the  
charge current is reduced, the system current is reduced while the battery supplements the load to supply the  
system. This may cause a thermal shutdown of the bq2416xx if the die temperature rises too high. At any state,  
if TJ exceeds TSHTDWN, the bq2416xx suspends charging and disables the buck converter. During thermal  
shutdown mode, the buck converter is turned off, all timers are suspended, and a single 128μs pulse is sent on  
the STAT and INT outputs and the STATx and FAULT_x bits of the status registers are updated in the I2C. A  
new charging cycle begins when TJ falls below TSHTDWN by approximately 10°C.  
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Feature Description (continued)  
9.3.16 Input Voltage Protection in Charge Mode  
9.3.16.1 Sleep Mode  
The bq2416xx enters the low-power sleep mode if the voltage on VSUPPLY falls below the sleep-mode entry  
threshold, VBAT+VSLP, and VSUPPLY is higher than the undervoltage lockout threshold, VUVLO. This feature  
prevents draining the battery during the absence of VSUPPLY. When VSUPPLY < VBAT+ VSLP, the bq2416xx turns off  
the PWM converter, turns the battery FET on and drives BGATE to GND, sends a single 128μs pulse on the  
STAT and INT outputs and updates the STATx and FAULT_x bits in the status registers. Once VSUPPLY > VBAT  
+
VSLP, the STATx and FAULT_x bits are cleared and the device initiates a new charge cycle.  
9.3.16.2 Input Voltage Based DPM  
During normal charging process, if the input power source is not able to support the programmed or default  
charging current, the supply voltage decreases. Once the supply drops to VIN_DPM (default 4.2V for both inputs),  
the input current limit is reduced to prevent further supply droop. When the IC enters this mode, the charge  
current is lower than the set value and the DPM_STATUS bit is set (Bit 5 in Register 05H). This feature provides  
IC compatibility with adapters with different current capabilities without a hardware change. Figure 15 shows the  
VIN–DPM behavior to a current-limited source. In this figure the input source has a 750mA current limit and the  
charging is set to 750mA. The SYS load is then increased to 1.2A.  
Adapter Voltage Falls due  
V
IN  
5 V Adapter  
rated for 750 mA  
to Adapter Current Limit  
Input Current Reduced by VINDPM function  
to Prevent Adapter from Crashing  
I
IN  
V
SYS  
750 mA Charging  
750 mA Charging  
I
BAT  
Supplement Mode  
1.2 A Load Step  
I
SYS  
Figure 15. bq24160 VIN-DPM  
9.3.16.3 Bad Source Detection  
When a source is connected to IN or USB, the bq2416xx runs a Bad Source Detection procedure to determine if  
the source is strong enough to provide some current to charge the battery. A current sink is turned on (30mA for  
USB input, 75mA for the IN input) for 32ms. If the source is valid after the 32ms (VBADSOURCE < VSUPPLY < VOVP),  
the buck converter starts up and normal operation continues. If the supply voltage falls below VBAD_SOURCE during  
the detection, the current sink shuts off for two seconds and then retries, a single 128μs pulse is sent on the  
STAT and INT outputs and the STATx and FAULT_x bits of the status registers and the battery/supply status  
registers are updated. The detection circuits retry continuously until either a new source is connected to the other  
input or a valid source is detected after the detection time. If during normal operation the source falls to  
VBAD_SOURCE, the bq2416xx turns off the PWM converter, turns the battery FET on, sends a single 128μs pulse is  
sent on the STAT and INT outputs and the STATx and FAULT_x bits of the status registers, and the  
battery/supply status registers are updated. Once a good source is detected, the STATx and FAULT_x bits are  
cleared and the device returns to normal operation.  
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Feature Description (continued)  
If two supplies are connected, the supply with precedence is checked first. If the supply detection fails once, the  
device switches to the other supply for two seconds and then retries. This allows the priority supply to settle if the  
connection was jittery or the supply ramp was too slow to pass detection. If the priority supply fails the detection  
a second time, it is locked out and lower priority supply is used. Once the bad supply is locked out, it remains  
locked out until the supply voltage falls below UVLO. This prevents continuously switching between a weak  
supply and a good supply.  
9.3.16.4 Input Overvoltage Protection  
The built-in input overvoltage protection to protect the device and other downstream components against  
damage from overvoltage on the input supply (Voltage from VUSB or VIN to PGND). During normal operation, if  
VSUPPLY > VOVP, the bq2416xx turns off the PWM converter, turns the battery FET and BGATE on, sends a single  
128μs pulse is sent on the STAT and INT outputs and the STATx and FAULT_x bits of the status registers and  
the battery/supply status registers are updated. Once the OVP fault is removed, the STATx and FAULT_x bits  
are cleared and the device returns to normal operation.  
To allow operation with some unregulated adapters, the OVP circuit is not active during Bad Source Detection.  
This provides some time for the current sink to pull the unregulated adapter down into an acceptable range. If the  
adapter voltage is high at the end of the detection, the startup of the PWM converter does not occur. The OVP  
circuit is active during normal operation, so if the system standby current plus the charge current is not enough to  
pull down the source, operation is suspended.  
9.3.16.5 Reverse Boost (Boost Back) Prevention Circuit  
A buck converter has two operating modes, continuous conduction mode (CCM) and discontinuous conduction  
mode (DCM). In DCM, the inductor current ramps down to zero during the switching cycle while in CCM the  
inductor maintains a DC level of current. Transitioning from DCM to CCM during load transients, slows down the  
converter's transient response for those load steps, which can result in the SYS rail drooping. To achieve the  
fastest possible transient reponse for this charger, this charger's synchronous buck converter is forced to run in  
CCM even at light loads when the buck converter would typically revert to DCM. The challenge that presents  
itself when forcing CCM with a charger is that the output of the buck converter now has a power source. Thus, if  
the battery voltage, V(BAT), is ever greater than VBATREG, the inductor current goes fully negative and pushes  
current back to the input supply. This effect causes the input source voltage to rise if the input source cannot sink  
current. The input over-voltage protection circuit protects the IC from damage however some input sources may  
be damaged if the voltage rises. To prevent this, this charger has implemented a reverse boost prevention circuit.  
When reverse current is sensed that is not a result of the supplement comparator tripping, this circuit disables  
the internal battery FET and changes the feedback point to VSYSREG for 1 ms. After the 1-ms timeout, the  
BATFET is turned on again and the battery is tested to see if it is higher than VBATREG (negative current). The  
reverse current protection is only active when VBOVP > VBAT > VBATREG - VRCH. Having VBOVP > VBAT > VBATREG  
-
VRCH results in an approximately 100-mV, 1000-Hz ripple on SYS as seen in . The most common trigger for  
reverse boost prevention is a load transient on SYS that requires the charger to enter battery supplement mode.  
When the IC enters reverse boost prevention, the IC stops charging or exits charge done which may result in  
the battery never reaching full charge. With termination enabled and ITERM > 150mA or with a high line  
impedance to the battery, the likelihood of activating the reverse boost prevention circuit is small and even when  
activated, the charger typically exits reverse boost prevention as the battery relaxes. With termination enabled  
and ITERM < 150mA or with a low impedance battery, the likelihood of activating the reverse boost prevention  
circuit by a load transient or even the inductor ripple current is higher. In either case, the IC resumes charging  
until VBAT drops below VBATREG - VRCH, resulting in the battery always charging to at least 0.97 of full  
charge. If full charge is required with ITERM < 150mA then the recommended solution to ensure full charge is  
as follows  
1.  
SET the charger’s enable no battery operation bit ( EN_NOBATOP) = 1 to disable the reverse boost  
prevention circuits. Brief, low-amplitude voltage pulses on IN may be observed as the IC enters boost back  
to resolve instances where VBAT is greater than the VBATREG, for example when exiting supplement  
mode. The I2C communication software must ensure that VBATREG is never written below VBAT. The IC  
automatically rewrites the VBATREG register to the default value of 3.6V when existing HOST mode. For  
JEITA enabled ICs, the IC automatically lowers the voltage reference to 0.98 of the VBATREG value. The  
software must account for these instances as well.  
2.  
Disable the charger’s termination function and TS functions and use a gas gauge to control  
termination and TS through its independent voltage and current measurements.  
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Feature Description (continued)  
Figure 16. V(SYS) when Reverse Boost Prevention Circuit is Active  
9.3.17 Charge Status Outputs (STAT, INT)  
The STAT output is used to indicate operation conditions for bq2416xx. STAT is pulled low during charging when  
EN_STAT bit in the control register (0x02h) is set to “1”. When charge is complete or disabled, STAT is high  
impedance. When a fault occurs, a 128-µs pulse (interrupt) is sent out to notify the host. The status of STAT  
during different operation conditions is summarized in Table 1. STAT drives an LED for visual indication or can  
be connected to the logic rail for host communication. The EN_STAT bit in the control register (00H) is used to  
enable/disable the charge status for STAT. The interrupt pulses are unaffected by EN_STAT and will always be  
shown. The INT output is identical to STAT and is used to interface with a low voltage host processor.  
Table 1. STAT Pin Summary  
Charge State  
Charge in progress and EN_STAT=1  
STAT and INT behavior  
Low  
Other normal conditions  
High-Impedance  
Status Changes: Supply Status Change (plug in or removal), safety timer fault,  
watchdog expiration, sleep mode, battery temperature fault (TS), battery fault  
(OVP or absent), thermal shutdown  
128-µs pulse, then High Impedance  
9.3.18 Good Battery Monitor  
The bq2416xx contains a good battery monitor circuit that places the bq2416xx into high-z mode if the battery  
voltage is above the BATGD threshold while in DEFAULT mode. This function is used to enable compliance to  
the battery charging standard that prevents charging from an un-enumerated USB host while the battery is above  
the good battery threshold. If the bq2416xx is in HOST mode, it is assumed that USB host has been enumerated  
and the good battery circuit has no effect on charging.  
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9.4 Device Functional Modes  
The state machine of the bq2416x automatically changes primary states (Off, sleep, HiZ, charge disabled,  
charging, charge done, battery OVP, fault) based on data in the I2C registers, IN and USB pin voltages, BAT pin  
voltage and current flow, TS pin voltage, CD pin voltage and status of the safety timer. The BAT and TS pin  
voltages as well as current flow into the IN and USB pins, out of SYS pin and into/out of the BAT pin determine  
the charging sub-states, including conditioning, constant current (CC), CC with reduced charge current, constant  
voltage (CV) with reduced charge current.  
9.5 Programming  
9.5.1 Serial Interface Description  
The bq2416xx uses an I2C-compatible interface to program charge parameters. I2C is a 2-wire serial interface  
developed by Philips Semiconductor (see I2C-Bus Specification, Version 2.1, January 2000). The bus consists of  
a data line (SDA) and a clock line (SCL) with pull-up structures. When the bus is idle, both SDA and SCL lines  
are pulled high. All I2C-compatible devices connect to the I2C bus through open drain I/O pins, SDA and SCL. A  
master device, usually a microcontroller or a digital signal processor, controls the bus. The master is responsible  
for generating the SCL signal and device addresses. The master also generates specific conditions that indicate  
the START and STOP of data transfer. A slave device receives and/or transmits data on the bus under control of  
the master device.  
The bq2416xx device works as a slave and supports the following data transfer modes, as defined in the I2C Bus  
Specification: standard mode (100kbps) and fast mode (400kbps). The interface adds flexibility to the battery  
charging solution, enabling most functions to be programmed to new values depending on the instantaneous  
application requirements. Register contents remain intact as long as battery voltage remains above 2.5V  
(typical). The I2C circuitry is powered from VBUS when a supply is connected. If the VBUS supply is not  
connected, the I2C circuitry is powered from the battery through BAT. The battery voltage must stay above 2.5V  
with no input connected in order to maintain proper operation.  
The data transfer protocol for standard and fast modes is exactly the same; therefore, they are referred to as the  
F/S-mode in this document. The bq2416xx devices only support 7-bit addressing. The device 7-bit address is  
defined as ‘1101011’ (6Bh).  
9.5.1.1 F/S Mode Protocol  
The master initiates data transfer by generating a start condition. The start condition is when a high-to-low  
transition occurs on the SDA line while SCL is high, as shown in Figure 17. All I2C-compatible devices should  
recognize a start condition.  
DATA  
CLK  
S
P
START Condition  
STOP Condition  
Figure 17. START and STOP Condition  
The master then generates the SCL pulses, and transmits the 8-bit address and the read/write direction bit R/W  
on the SDA line. During all transmissions, the master ensures that data is valid. A valid data condition requires  
the SDA line to be stable during the entire high period of the clock pulse (see Figure 18). All devices recognize  
the address sent by the master and compare it to their internal fixed addresses. Only the slave device with a  
matching address generates an acknowledge (see Figure 19) by pulling the SDA line low during the entire high  
period of the ninth SCL cycle. Upon detecting this acknowledge, the master knows that communication link with a  
slave has been established.  
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Programming (continued)  
DATA  
CLK  
Chang  
of Data  
Allowed  
Data Line  
Stable  
Data Valid  
Figure 18. Bit Transfer on the Serial Interface  
The master generates further SCL cycles to either transmit data to the slave (R/W bit 1) or receive data from the  
slave (R/W bit 0). In either case, the receiver needs to acknowledge the data sent by the transmitter. So an  
acknowledge signal can either be generated by the master or by the slave, depending on which one is the  
receiver. The 9-bit valid data sequences consisting of 8-bit data and 1-bit acknowledge can continue as long as  
necessary. To signal the end of the data transfer, the master generates a stop condition by pulling the SDA line  
from low to high while the SCL line is high (see Figure 20). This releases the bus and stops the communication  
link with the addressed slave. All I2C compatible devices must recognize the stop condition. Upon the receipt of a  
stop condition, all devices know that the bus is released, and wait for a start condition followed by a matching  
address. If a transaction is terminated prematurely, the master needs sending a STOP condition to prevent the  
slave I2C logic from remaining in an incorrect state. Attempting to read data from register addresses not listed in  
this section result in FFh being read out.  
Data Output  
by Transmitter  
Not Acknowledge  
Data Output  
by Receiver  
Acknowledge  
SCL From  
Master  
1
2
8
9
S
Clock Pulse for  
Acknowledgement  
START  
Condition  
Figure 19. Acknowledge on the I2C Bus  
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Programming (continued)  
Recognize START or  
REPRATED START  
Condition  
Recognize STOP or  
REPRATED START  
Condition  
Generate ACKNOWLEDGE  
Signal  
P
SDA  
Acknowledgment  
Signal From Slave  
MSB  
Sr  
Address  
R/W  
SCL  
S
or  
Sr  
Sr  
or  
P
ACK  
ACK  
Clock Line Held Low While  
Interrupts are Serviced  
Figure 20. Bus Protocol  
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9.6 Register Maps  
9.6.1 Status/Control Register (READ/WRITE)  
Memory location: 00, Reset state: 0xxx 0xxx  
BIT  
NAME  
Read/Write FUNCTION  
B7 (MSB)  
TMR_RST  
Read/Write Write: TMR_RST function, write “1” to reset the watchdog timer (auto clear)  
Read: Always 0  
(bq24160/1/3 only)  
B6  
B5  
B4  
STAT_2  
STAT_1  
STAT_0  
Read only 000- No Valid Source Detected  
001- IN Ready (shows preferred source when both connected)  
010- USB Ready (shows preferred source when both connected)  
Read only  
Read only  
011- Charging from IN  
100- Charging from USB  
101- Charge Done  
110- NA  
111- Fault  
B3  
SUPPLY_SEL  
Read/Write 0-IN has precedence when both supplies are connected  
1-USB has precedence when both supplies are connected (default 0)  
B2  
B1  
FAULT_2  
FAULT_1  
FAULT_0  
Read only 000-Normal  
001- Thermal Shutdown  
010- Battery Temperature Fault  
Read only  
B0 (LSB)  
Read only  
011- Watchdog Timer Expired (bq24160/1/1B/3 only)  
100- Safety Timer Expired (bq24160/1/1B/3 only)  
101- IN Supply Fault  
110- USB Supply Fault  
111- Battery Fault  
SUPPLY_SEL Bit (Supply Precedence Selector)  
The SUPPLY_SEL bit selects which supply has precedence when both supplies are present. In cases  
where both supplies are connected, they must remain isolated from each other which means only one  
is allowed to charge the battery. Write a “1” to SUPPLY_SEL to select the USB input to have  
precedence. Write a “0” to select the IN input.Note the following behavior when switching the  
SUPPLY_SEL bit with both supplies attached:  
The bq2416xx returns to high impedance mode  
The input supply is switched  
The bq2416xx begins a full startup cycle starting with bad adapter detection then proceeding to soft-start  
Similarly, if charging from the non-preferred supply when the preferred supply is attached, the  
bq2416xx follows the same procedure.  
STAT_x and FAULT_x Bits  
The STAT_x show the current status of the device and are updated dynamically as the IC changes  
state. The FAULT_x bits show faults that have occurred and are only cleared by reading the bits,  
assuming the fault no longer exists. If multiple faults occur, the first one is the one that is shown.  
9.6.2 Battery/ Supply Status Register (READ/WRITE)  
Memory location: 01, Reset state: xxxx 0xxx  
BIT  
B7 (MSB)  
B6  
NAME  
Read/Write FUNCTION  
INSTAT1  
INSTAT0  
Read Only 00-Normal  
01-Supply OVP  
Read Only  
10-Weak Source Connected (No Charging)  
11- VIN<VUVLO  
B5  
B4  
USBSTAT1  
USBSTAT0  
Read Only 00-Normal  
01-Supply OVP  
Read Only  
01-Weak Source Connected (No Charging)  
11- VUSB<VUVLO  
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BIT  
NAME  
Read/Write FUNCTION  
B3  
OTG_LOCK  
Read/Write 0 – No OTG supply present. Use USB input as normal.  
1 – OTG supply present. Lockout USB input for charging.  
(default 0)  
B2  
B1  
BATSTAT1  
BATSTAT0  
Read Only 00-Battery Present and Normal  
01-Battery OVP  
Read Only  
10-Battery Not Present  
11- NA  
B0 (LSB)  
EN_NOBATOP  
Read/ Write 0-Normal Operation  
1-Enables No Battery Operation when termination is disabled (default 0)  
OTG_LOCK Bit (USB Lockout)  
The OTG_LOCK bit is used to prevent any charging from USB input regardless of the SUPPLY_SEL  
bit and IN supply status. For systems using OTG supplies, it is not desirable to charge from an OTG  
source. Doing so would mean draining the battery by allowing it to effectively charge itself. Write a “1”  
to OTG_LOCK to lock out the USB input. Write a “0” to OTG_LOCK to return to normal operation.  
During OTG lock, the USB input is ignored and DRV does not come up. The watchdog timer must be  
reset while in USB_LOCK to maintain the USB lockout state. This prevents the USB input from being  
permanently locked out for cases where the host loses I2C communication with OTG_LOCK set (i.e.,  
discharged battery from OTG operation). See the Safety Timer and Watchdog Timer section for more  
details.  
EN_NOBATOP (No Battery Operation)  
The EN_NOBATOP bit enables no battery operation. When using the bq2416x without a battery  
attached, it is recommended to first disable charging, then disable charge termination and finally set  
this bit to 1. Setting this bit to 1 also disables the reverse boost prevention circuit and the BATOVP  
circuit. With a battery attached, setting this bit to 1 may be helpful to ensure full battery charging as  
explained in the reverse battery prevention circuit section. In the event of battery overvoltage (e.g.,  
recovery from large SYS load transient requiring supplement), the BATOVP protection circuit turns off  
the buck converter to allow the battery to discharge through SYS.  
9.6.3 Control Register (READ/WRITE)  
Memory location: 02, Reset state: 1000 1100  
BIT  
NAME  
Read/Write  
FUNCTION  
B7 (MSB)  
RESET  
Write only  
Write: 1 – Reset all registers to default values  
0 – No effect  
Read: always get “1”  
B6  
B5  
B4  
IUSB_LIMIT_2  
IUSB_LIMIT_1  
IUSB_LIMIT _0  
Read/Write  
Read/Write  
Read/Write  
000 – USB2.0 host with 100mA current limit  
001 – USB3.0 host with 150mA current limit  
010 – USB2.0 host with 500mA current limit  
011 – USB host/charger with 800mA current limit  
100 – USB3.0 host with 900mA current limit  
101 – USB host/charger with 1500mA current limit  
110–111 – NA (default 000(1)  
)
B3  
EN_STAT  
Read/Write  
1 – Enable STAT output to show charge status,  
0-Disable STAT output for charge status. Fault interrupts are still show even when  
EN_STAT = 0. (default 1)  
B2  
B1  
TE  
CE  
Read/Write  
Read/Write  
Read/Write  
1 – Enable charge current termination,  
0-Disable charge current termination (default 1)  
1 – Charging is disabled  
0 – Charging enabled (default 0 bq24160/1/1B/3/8)  
B0 (LSB)  
HZ_MODE  
1 – High impedance mode  
0 – Not high impedance mode (default 0)  
(1) When in DEFAULT mode, the D+/D– (bq24160) or PSEL (bq24161/8) inputs determine the input current limit for the USB input.  
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RESET Bit  
The RESET bit in the control register (0x02h) is used to reset all the charge parameters. Write “1” to  
RESET bit to reset all the registers to default values and place the bq2416xx into DEFAULT mode and  
turn off the watchdog timer. The RESET bit is automatically cleared to zero once the bq2416xx enters  
DEFAULT mode.  
CE Bit (Charge Enable)  
The CE bit in the control register (0x02h) is used to disable or enable the charge process. A low logic  
level (0) on this bit enables the charge and a high logic level (1) disables the charge. When charge is  
disabled, the SYS output regulates to VSYS(REG) and battery is disconnected from the SYS.  
Supplement mode is still available if the system load demands cannot be met by the supply.  
HZ_MODE Bit (High Impedance Mode Enable)  
The HZ_MODE bit in the control register (0x02h) is used to disable or enable the high impedance  
mode. A low logic level (0) on this bit enables the IC and a high logic level (1) puts the IC in a low  
quiescent current state called high impedance mode. When in high impedance mode, the converter is  
off and the battery FET and BGATE are on. The load on SYS is supplied by the battery.  
9.6.4 Control/Battery Voltage Register (READ/WRITE)  
Memory location: 03, Reset state: 0001 0100  
BIT  
B7 (MSB)  
B6  
NAME  
VBREG5  
VBREG4  
VBREG3  
VBREG2  
VBREG1  
VBREG0  
IINLIMIT  
Read/Write  
Read/Write  
Read/Write  
Read/Write  
Read/Write  
Read/Write  
Read/Write  
Read/Write  
FUNCTION  
Battery Regulation Voltage: 640 mV (default 0)  
Battery Regulation Voltage: 320 mV (default 0)  
Battery Regulation Voltage: 160 mV (default 0)  
Battery Regulation Voltage: 80 mV (default 1)  
Battery Regulation Voltage: 40 mV (default 0)  
Battery Regulation Voltage: 20 mV (default 1)  
B5  
B4  
B3  
B2  
B1  
Input Limit for IN input-  
0 – 1.5A  
1 – 2.5A (default 0)  
B0 (LSB)  
D+/D–_EN  
Read/Write  
0 – Normal state, D+/D- Detection done  
1 – Force D+/D– Detection. Returns to “0” after detection is done. (default 0)  
Charge voltage range is 3.5V–4.44V with the offset of 3.5V and step of 20mV (default 3.6V).  
Before writing to increase VBATREG register following a BATOVP event (e.g., IN or USB voltage is applied,  
IC remains in DEFAULT mode and then VBAT>3.6V is attached), toggle the HiZ bit or CD pin to clear the  
BATOVP fault.  
9.6.5 Vender/Part/Revision Register (READ only)  
Memory location: 04, Reset state: 0100 0000  
BIT  
B7 (MSB)  
B6  
NAME  
Vender2  
Vender1  
Vender0  
PN1  
Read/Write  
Read only  
Read only  
Read only  
Read only  
Read only  
FUNCTION  
Vender Code: bit 2 (default 0)  
Vender Code: bit 1 (default 1)  
Vender Code: bit 0 (default 0)  
For I2C Address 6Bh:  
00: bq2416xx  
B5  
B4  
B3  
PN0  
01–11: Future product spins  
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SLUSAO0G NOVEMBER 2011REVISED DECEMBER 2015  
www.ti.com  
BIT  
B2  
NAME  
Read/Write  
Read only  
Read only  
Read only  
FUNCTION  
Revision2  
Revision1  
Revision0  
000: Revision 1.0  
001: Revision 1.1  
010: Revision 2.0  
011: Revision 2.1  
100: Revision 2.2  
101: Revision 2.3  
110-111: Future Revisions  
B1  
B0 (LSB)  
9.6.6 Battery Termination/Fast Charge Current Register (READ/WRITE)  
Memory location: 05, Reset state: 0011 0010  
BIT  
B7 (MSB)  
B6  
NAME  
ICHRG4  
ICHRG3  
ICHRG2  
ICHRG1  
ICHRG0  
ITERM2  
ITERM1  
ITERM0  
Read/Write  
Read/Write  
Read/Write  
Read/Write  
Read/Write  
Read/Write  
Read/Write  
Read/Write  
Read/Write  
FUNCTION  
Charge current: 1200mA – (default 0)  
Charge current: 600mA – (default 0)  
Charge current: 300mA – (default 1)  
Charge current: 150mA – (default 1)  
Charge current: 75 mA (default 0)  
B5  
B4  
B3  
B2  
Termination current sense voltage: 200mA (default 0)  
Termination current sense voltage: 100mA (default 1)  
Termination current sense voltage: 50mA (default 0)  
B1  
B0 (LSB)  
Charge current sense offset is 550mA and default charge current is 1000mA.  
Termination threshold offset is 50mA and default termination current is 150mA  
9.6.7 VIN-DPM Voltage/ DPPM Status Register  
Memory location: 06, Reset state: xx00 0000  
BIT  
NAME  
Read/Write  
FUNCTION  
B7(MSB)  
MINSYS_STATUS  
Read Only  
1 – Minimum System Voltage mode is active (VBAT<VMINSYS  
)
0 – Minimum System Voltage mode is not active  
B6  
DPM_STATUS  
Read Only  
1 – VIN-DPM mode is active  
0 – VIN-DPM mode is not active  
B5  
B4  
VINDPM2(USB)  
VINDPM1(USB)  
VINDPM0(USB)  
VINDPM2(IN)  
VINDPM1(IN)  
VINDPM0(IN)  
Read/Write  
Read/Write  
Read/Write  
Read/Write  
Read/Write  
Read/Write  
USB input VIN-DPM voltage: 320mV (default 0)  
USB input VIN-DPM voltage: 160mV (default 0)  
USB input VIN-DPM voltage: 80mV (default 0)  
IN input VIN-DPM voltage: 320mV (default 0)  
IN input VIN-DPM voltage: 160mV (default 0)  
IN input VIN-DPM voltage: 80mV (default 0)  
B3  
B2  
B1  
B0(LSB)  
VIN-DPM voltage offset is 4.20V and default VIN-DPM threshold is 4.20V.  
9.6.8 Safety Timer/ NTC Monitor Register (READ/WRITE)  
Memory location: 07, Reset state: 1001 1xxx  
BIT  
NAME  
Read/Write  
FUNCTION  
B7 (MSB)  
2XTMR_EN  
Read/Write  
1 – Timer slowed by 2x when in thermal regulation, input current limit, VIN_DPM or  
DPPM  
0 – Timer not slowed at any time (default 0) (bq24160/1 only)  
B6  
B5  
TMR_1  
TMR_2  
Read/Write  
Read/Write  
Safety Timer Time Limit –  
00 – 27 minute fast charge  
01 – 6 hour fast charge  
10 – 9 hour fast charge  
11 – Disable safety timers (default 00) (bq24160/1 only)  
B4  
NA  
Read/Write  
NA  
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SLUSAO0G NOVEMBER 2011REVISED DECEMBER 2015  
BIT  
NAME  
Read/Write  
FUNCTION  
B3  
TS_EN  
Read/Write  
0 – TS function disabled  
1 – TS function enabled (default 1)  
B2  
B1  
TS_FAULT1  
TS_FAULT0  
Read only  
Read only  
TS Fault Mode:  
00 – Normal, No TS fault  
01 – TS temp < TCOLD or TS temp > THOT(Charging suspended)  
10 – TCOOL > TS temp > TCOLD (Charge current reduced by half, bq24160 only)  
11 – TWARM < TS temp < THOT (Charge voltage reduced by 140mV, bq24160 only)  
B0 (LSB)  
LOW_CHG  
Read/ Write  
0 – Charge current as programmed in Register 0x05  
1 – Charge current is half programmed value in Register 0x05  
(default 0)  
2xTMR_EN Bit (2x Timer Enable)  
The 2xTMR_EN bit is used to slow down the timer when charge current is reduced by the system load.  
When 2xTMR_EN is a "1", the safety timer is slowed to half speed effectively doubling the timer time.  
The conditions that activate the 2x timer are: Input Current Limit, VINDPM, Thermal Regulation,  
LOW_CHG, BATSHRT and TS Cool. When 2xTMR_EN is a "0", the timer operates at normal speed in  
all conditions.  
LOW_CHG Bit (Low Charge Mode Enable)  
The LOW_CHG bit is used to reduce the charge current from the programmed value. This feature is  
used by systems where battery NTC is monitored by the host and requires a reduced charge current  
setting or by systems that need a “preconditioning” current for low battery voltages. Write a “1” to this  
bit to charge at half of the programmed charge current (bq24160/1/3/8). Write a “0” to this bit to charge  
at the programmed charge current.  
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SLUSAO0G NOVEMBER 2011REVISED DECEMBER 2015  
10 Application and Implementation  
10.1 Application Information  
www.ti.com  
A typical application circuit using the bq24160 with a smartphone's GSM power amplifier (PA) powered directly  
from the battery is shown in Figure 21. A typical application circuit using the bq24161 with a smartphone's GSM  
PA powered from the SYS rail, to allow for calls even with a deeply discharged battery, is shown in Figure 22.  
Each circuit shows the minimum capacitance requirements for each pin and typical recommended inductance  
value of 1.5 µH. The TS resistor divider for configuring the TS function for the battery's specific thermistor can be  
computed from equations Equation 1 and Equation 2. The resistor on STAT is sized per the LED current  
requirements. All other configuration settings for VINDPM, input current limit, charge current and charge voltage  
are made in EEPROM registers using I2C commands. Options for sizing the inductor outside the 1.5 µH  
recommended value and additional SYS pin capacitance are explained in the next section.  
10.2 Typical Application  
ADAPTER  
1.5 mH  
IN  
SW  
PMIDI  
System  
Load  
0.01 mF  
1 mF  
4.7 mF  
BOOT  
SYS  
USB  
VBUS  
D+  
D-  
10 mF  
PMIDU  
PGND  
GND  
1 mF  
4.7 mF  
BGATE  
DRV  
BAT  
TS  
VDRV  
1 mF  
1 mF  
GSM  
PA  
PACK+  
STAT  
TEMP  
VSYS  
(1.8V)  
D+  
D-  
PACK-  
HOST  
bq24160  
GPIO1  
INT  
SDA  
SCL  
SDA  
SCL  
Figure 21. bq24160, Shown with no External Discharge FET, PA Connected to Battery  
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SLUSAO0G NOVEMBER 2011REVISED DECEMBER 2015  
Typical Application (continued)  
ADAPTER  
1.5 mH  
IN  
SW  
PMIDI  
System  
Load  
0.01 mF  
1 mF  
4.7 mF  
BOOT  
SYS  
USB  
VBUS  
D+  
10 mF  
PMIDU  
D-  
PGND  
GND  
1 mF  
4.7 mF  
BGATE  
GSM  
PA  
DRV  
BAT  
TS  
VDRV  
1 mF  
1 mF  
PACK+  
STAT  
PSEL  
TEMP  
VSYS  
(1.8V)  
USB PHY  
PACK-  
HOST  
bq24161  
GPIO1  
INT  
SDA  
SCL  
SDA  
SCL  
Figure 22. bq24161, Shown with External Discharge FET, PA Connected to System for GSM Call Support  
with a Deeply Discharged or No Battery  
10.2.1 Design Requirements  
Min  
4.2  
4.2  
3.3  
Typ  
Max  
10  
6
Unit  
V
Supply voltage, VIN  
USB voltage, VUSB  
System voltage, VSYS  
Input voltage from ac adapter  
Input voltage from USB or equivalent supply  
Voltage output at SYS terminal (depends on VBAT voltage and  
V
VBATRE  
G+4.17%  
V
status of VINDPM  
)
Battery voltage, VBAT  
Supply current, IIN(MAX)  
Supply current, IUSB(MAX)  
Voltage output at VBAT terminal (registers set via I2C  
communication)  
2
1.5  
4.2  
0.5  
4.44  
V
A
Maximum input current from ac adapter input (registers set via  
I2C communication)  
2.5  
Maximum input current from USB input (registers set via I2C  
communication)  
0.1  
1.5  
A
Fast charge current,  
ICHRG(MAX)  
Battery charge current (registers set via I2C communication)  
0.550  
-40  
2.5  
A
Operating junction temperature range, TJ  
125  
°C  
10.2.2 Detailed Design Procedure  
10.2.2.1 Output Inductor and Capacitor Selection Guidelines  
When selecting an inductor, several attributes must be examined to find the right part for the application. First,  
the inductance value should be selected. The bq2416xx is designed to work with 1.5µH to 2.2µH inductors. The  
chosen value will have an effect on efficiency and package size. Due to the smaller current ripple, some  
efficiency gain is reached using the 2.2µH inductor, however, due to the physical size of the inductor, this may  
not be a viable option. The 1.5µH inductor provides a good tradeoff between size and efficiency.  
Once the inductance has been selected, the peak current must be calculated in order to choose the current  
rating of the inductor. Use Equation 5 to calculate the peak current.  
%
æ
ö
RIPPPLE  
IPEAK = ILOAD(MAX)  
´
1+  
ç
÷
2
è
ø
(5)  
35  
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The inductor selected must have a saturation current rating greater than or equal to the calculated IPEAK. Due to  
the high currents possible with the bq2416xx, a thermal analysis must also be done for the inductor. Many  
inductors have a 40°C temperature-rise rating. The DC component of the current can cause a 40°C temperature  
rise above the ambient temperature in the inductor. For this analysis, the typical load current may be used  
adjusted for the duty cycle of the load transients. For example, if the application requires a 1.5A DC load with  
peaks at 2.5A 20% of the time, a Δ40°C temperature rise current must be greater than 1.7A:  
ITEMPRISE = ILOAD + D ´  
I
(
- ILOAD = 1.5A + 0.2 × 2.5A -1 .5A = 1.7A  
(
)
)
PEAK  
(6)  
The bq2416xx provides internal loop compensation. Using this scheme, the bq2416xx is stable with 10µF to  
200µF of local capacitance on the SYS output. The capacitance on the SYS rail can be higher if distributed  
amongst the rail. To reduce the output voltage ripple, a ceramic capacitor with the capacitance between 10µF  
and 47µF is recommended for local bypass to SYS. A 47µF bypass capacitor is recommended for optimal  
transient response.  
10.2.3 Application Curves  
USB500  
1500mA ILIM  
925mA Charge Setting  
1300mA Charge Setting  
Figure 23. USB Plug-In with Battery Connected  
Figure 24. IN Plug-in with Battery Connected  
Termination Enabled  
Figure 25. Adapter Detection USB  
Figure 26. Battery Insert During Battery Detection  
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Termination Enabled  
MINSYS Operation  
USB1500  
200mA-1400mA Load Step on SYS  
Figure 27. Battery Pull During Charging  
Figure 28. Load Transient into DPPM  
VUSB  
5 V/div  
5 V/div  
VSYS  
VBAT  
VSTAT/INT  
1 V/div  
5 V/div  
VSW  
IUSB  
500 mA/div  
1 A/div  
IBAT  
IBAT  
500 mA/div  
10 ms/div  
4 ms/div  
MINSYS Operation  
USB500  
200mA - 1400mA Load Step on SYS  
Figure 30. OVP Fault USB Input  
Figure 29. Load Transient into Supplement Mode  
100  
100  
90  
80  
70  
60  
50  
40  
30  
20  
10  
0
90  
80  
70  
60  
50  
40  
30  
20  
10  
0
VIN = 5 V  
VIN = 7 V  
VIN = 9 V  
VUSB = 5 V  
VUSB = 6 V  
0.1  
1
3
0.1  
1
2
System Current (A)  
System Current (A)  
G001  
G002  
Charge Disabled  
SYS loaded  
Charge Disabled  
SYS loaded  
VBATREG = 3.6V  
IN2500 ILIM  
VBATREG = 3.6V  
USB1500 ILIM  
Figure 31. IN Efficiency  
Figure 32. USB Efficiency  
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SLUSAO0G NOVEMBER 2011REVISED DECEMBER 2015  
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11 Power Supply Recommendations  
11.1 Requirements for SYS Output  
In order to provide an output voltage on SYS, the bq2416xx requires either a power supply between 4.2 V and  
6.0 V for USB input on all versions, 4.2 V and 6.0 V for IN input on bq24168 and 4.2 V and 10.0 V on the  
remaining versions with at least 100 mA current rating connected to IN or USB OR a single-cell LiIon battery with  
voltage > VBATUVLO connected to BAT. The source current rating needs to be at least 2.5 A in order for the  
charger's buck converter to provide maximum output power to SYS.  
11.2 Requirements for Charging  
In order for charging to occur, the source voltage as measured at the IC's USB or IN pins (factoring in cable/trace  
losses from the source) must be greater than the VINDPM threshold (but less than the maximum values above)  
and the source's current rating must be higher than the buck converter needs to provide the load on SYS. For  
charging at a desired charge current of ICHRG, VUSBorINx IUSBorIN x η > VSYS x (ISYS+ ICHRG) where η is the efficiency  
estimate from Figure 1 or Figure 2 and VSYS = VBAT when VBAT charges above VMINSYS. The charger limits IUSBorIN  
to that input's current limit setting. With ISYS = 0 A, the charger consumes maximum power at the end of CC  
mode, when the voltage at the BAT pin is near VBATREG but ICHRG has not started to taper off toward ITERM  
.
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12 Layout  
12.1 Layout Guidelines  
It is important to pay special attention to the PCB layout. Figure 33 provides a sample layout for the high current  
paths of the bq2416xx. A list of layout guidelines follows.  
To obtain optimal performance, the power input capacitors, connected from the PMID input to PGND, must be  
placed as close as possible to the bq2416xx  
Minimize the amount of inductance between BAT and the postive connection of the battery terminal. If a large  
parasitic board inductance on BAT is expected, increase the bypass capacitance on BAT.  
Place 4.7µF input capacitor as close to PMID_ pin and PGND pin as possible to make high frequency current  
loop area as small as possible. Place 1µF input capacitor GNDs as close to the respective PMID cap GND  
and PGND pins as possible to minimize the ground difference between the input and PMID_.  
The traces from the input connector to the inputs of the bq2416xx should be as wide as possible to minimize  
the impedance in the line. Although the VINDPM feature will allow operation from input sources having high  
resistances(impedances), the bq2416xx input pins (IN and USB) have been optimized to connect to input  
sources with no more than 350mohm of input resistance, including cables and PCB traces  
The local bypass capacitor from SYS to GND should be connected between the SYS pin and PGND of the  
IC. The intent is to minimize the current path loop area from the SW pin through the LC filter and back to the  
PGND pin.  
Place all decoupling capacitors close to their respective IC pins and as close as to PGND (do not place  
components such that routing interrupts power stage currents). All small control signals should be routed  
away from the high-current paths.  
The PCB should have a ground plane (return) connected directly to the return of all components through vias  
(two vias per capacitor for power-stage capacitors, one via per capacitor for small-signal components). It is  
also recommended to put vias inside the PGND pads for the IC, if possible. A star ground design approach is  
typically used to keep circuit block currents isolated (high-power/low-power small-signal) which reduces noise-  
coupling and ground-bounce issues. A single ground plane for this design gives good results. With this small  
layout and a single ground plane, there is no ground-bounce issue, and having the components segregated  
minimizes coupling between signals.  
The high-current charge paths into IN, USB, BAT, SYS and from the SW pins must be sized appropriately for  
the maximum charge current in order to avoid voltage drops in these traces. The PGND pins should be  
connected to the ground plane to return current through the internal low-side FET.  
For high-current applications, the balls for the power paths should be connected to as much copper in the  
board as possible. This allows better thermal performance because the board conducts heat away from the  
IC.  
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SLUSAO0G NOVEMBER 2011REVISED DECEMBER 2015  
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12.2 Layout Example  
WCSP  
VQFN  
Figure 33. Recommended bq2416xx PCB Layout  
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SLUSAO0G NOVEMBER 2011REVISED DECEMBER 2015  
13 Device and Documentation Support  
13.1 Related Links  
The table below lists quick access links. Categories include technical documents, support and community  
resources, tools and software, and quick access to sample or buy.  
Table 2. Related Links  
TECHNICAL  
DOCUMENTS  
TOOLS &  
SOFTWARE  
SUPPORT &  
COMMUNITY  
PARTS  
PRODUCT FOLDER  
SAMPLE & BUY  
bq24160  
bq24160A  
bq24161  
bq24161B  
bq24163  
bq24168  
Click here  
Click here  
Click here  
Click here  
Click here  
Click here  
Click here  
Click here  
Click here  
Click here  
Click here  
Click here  
Click here  
Click here  
Click here  
Click here  
Click here  
Click here  
Click here  
Click here  
Click here  
Click here  
Click here  
Click here  
Click here  
Click here  
Click here  
Click here  
Click here  
Click here  
13.2 Community Resources  
The following links connect to TI community resources. Linked contents are provided "AS IS" by the respective  
contributors. They do not constitute TI specifications and do not necessarily reflect TI's views; see TI's Terms of  
Use.  
TI E2E™ Online Community TI's Engineer-to-Engineer (E2E) Community. Created to foster collaboration  
among engineers. At e2e.ti.com, you can ask questions, share knowledge, explore ideas and help  
solve problems with fellow engineers.  
Design Support TI's Design Support Quickly find helpful E2E forums along with design support tools and  
contact information for technical support.  
13.3 Trademarks  
E2E is a trademark of Texas Instruments.  
All other trademarks are the property of their respective owners.  
13.4 Electrostatic Discharge Caution  
These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam  
during storage or handling to prevent electrostatic damage to the MOS gates.  
13.5 Glossary  
SLYZ022 TI Glossary.  
This glossary lists and explains terms, acronyms, and definitions.  
14 Mechanical, Packaging, and Orderable Information  
The following pages include mechanical packaging and orderable information. This information is the most  
current data available for the designated devices. This data is subject to change without notice and revision of  
this document. For browser-based versions of this data sheet, refer to the left-hand navigation.  
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PACKAGE OPTION ADDENDUM  
www.ti.com  
21-Aug-2020  
PACKAGING INFORMATION  
Orderable Device  
Status Package Type Package Pins Package  
Eco Plan  
Lead finish/  
Ball material  
MSL Peak Temp  
Op Temp (°C)  
Device Marking  
Samples  
Drawing  
RGE  
RGE  
RGE  
RGE  
YFF  
Qty  
3000  
250  
(1)  
(2)  
(3)  
(4/5)  
(6)  
BQ24160ARGER  
BQ24160ARGET  
BQ24160RGER  
BQ24160RGET  
BQ24160YFFR  
BQ24160YFFT  
BQ24161BRGER  
BQ24161BRGET  
BQ24161BYFFR  
BQ24161RGER  
BQ24161RGET  
BQ24161YFFR  
BQ24161YFFT  
BQ24163RGER  
BQ24163RGET  
BQ24163YFFR  
ACTIVE  
VQFN  
VQFN  
24  
24  
24  
24  
49  
49  
24  
24  
49  
24  
24  
49  
49  
24  
24  
49  
Green (RoHS  
& no Sb/Br)  
NIPDAU  
Level-2-260C-1 YEAR  
Level-2-260C-1 YEAR  
Level-2-260C-1 YEAR  
Level-2-260C-1 YEAR  
Level-1-260C-UNLIM  
Level-1-260C-UNLIM  
Level-2-260C-1 YEAR  
Level-2-260C-1 YEAR  
Level-1-260C-UNLIM  
Level-2-260C-1 YEAR  
Level-2-260C-1 YEAR  
Level-1-260C-UNLIM  
Level-1-260C-UNLIM  
Level-2-260C-1 YEAR  
Level-2-260C-1 YEAR  
Level-1-260C-UNLIM  
BQ  
24160A  
ACTIVE  
ACTIVE  
ACTIVE  
ACTIVE  
ACTIVE  
ACTIVE  
ACTIVE  
ACTIVE  
ACTIVE  
ACTIVE  
ACTIVE  
ACTIVE  
ACTIVE  
ACTIVE  
ACTIVE  
Green (RoHS  
& no Sb/Br)  
NIPDAU  
NIPDAU  
NIPDAU  
SNAGCU  
SNAGCU  
NIPDAU  
NIPDAU  
SNAGCU  
NIPDAU  
NIPDAU  
SNAGCU  
SNAGCU  
NIPDAU  
NIPDAU  
SNAGCU  
BQ  
24160A  
VQFN  
3000  
250  
Green (RoHS  
& no Sb/Br)  
-40 to 85  
-40 to 85  
-40 to 85  
-40 to 85  
-40 to 85  
-40 to 85  
BQ  
24160  
VQFN  
Green (RoHS  
& no Sb/Br)  
BQ  
24160  
DSBGA  
DSBGA  
VQFN  
3000  
250  
Green (RoHS  
& no Sb/Br)  
BQ24160  
YFF  
Green (RoHS  
& no Sb/Br)  
BQ24160  
RGE  
RGE  
YFF  
3000  
250  
Green (RoHS  
& no Sb/Br)  
BQ  
24161B  
VQFN  
Green (RoHS  
& no Sb/Br)  
BQ  
24161B  
DSBGA  
VQFN  
3000  
3000  
250  
Green (RoHS  
& no Sb/Br)  
BQ24161B  
RGE  
RGE  
YFF  
Green (RoHS  
& no Sb/Br)  
-40 to 85  
-40 to 85  
-40 to 85  
-40 to 85  
-40 to 85  
-40 to 85  
-40 to 85  
BQ  
24161  
VQFN  
Green (RoHS  
& no Sb/Br)  
BQ  
24161  
DSBGA  
DSBGA  
VQFN  
3000  
250  
Green (RoHS  
& no Sb/Br)  
BQ24161  
YFF  
Green (RoHS  
& no Sb/Br)  
BQ24161  
RGE  
RGE  
YFF  
3000  
250  
Green (RoHS  
& no Sb/Br)  
BQ  
24163  
VQFN  
Green (RoHS  
& no Sb/Br)  
BQ  
24163  
DSBGA  
3000  
Green (RoHS  
& no Sb/Br)  
BQ24163  
Addendum-Page 1  
PACKAGE OPTION ADDENDUM  
www.ti.com  
21-Aug-2020  
Orderable Device  
Status Package Type Package Pins Package  
Eco Plan  
Lead finish/  
Ball material  
MSL Peak Temp  
Op Temp (°C)  
Device Marking  
Samples  
Drawing  
Qty  
(1)  
(2)  
(3)  
(4/5)  
(6)  
BQ24163YFFT  
BQ24168RGER  
BQ24168RGET  
BQ24168YFFR  
BQ24168YFFT  
ACTIVE  
DSBGA  
VQFN  
YFF  
49  
24  
24  
49  
49  
250  
Green (RoHS  
& no Sb/Br)  
SNAGCU  
Level-1-260C-UNLIM  
Level-2-260C-1 YEAR  
Level-2-260C-1 YEAR  
Level-1-260C-UNLIM  
Level-1-260C-UNLIM  
-40 to 85  
-40 to 85  
-40 to 85  
-40 to 85  
-40 to 85  
BQ24163  
ACTIVE  
ACTIVE  
ACTIVE  
ACTIVE  
RGE  
RGE  
YFF  
3000  
250  
Green (RoHS  
& no Sb/Br)  
NIPDAU  
NIPDAU  
SNAGCU  
SNAGCU  
BQ  
24168  
VQFN  
Green (RoHS  
& no Sb/Br)  
BQ  
24168  
DSBGA  
DSBGA  
3000  
250  
Green (RoHS  
& no Sb/Br)  
BQ24168  
YFF  
Green (RoHS  
& no Sb/Br)  
BQ24168  
(1) The marketing status values are defined as follows:  
ACTIVE: Product device recommended for new designs.  
LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect.  
NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design.  
PREVIEW: Device has been announced but is not in production. Samples may or may not be available.  
OBSOLETE: TI has discontinued the production of the device.  
(2) RoHS: TI defines "RoHS" to mean semiconductor products that are compliant with the current EU RoHS requirements for all 10 RoHS substances, including the requirement that RoHS substance  
do not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, "RoHS" products are suitable for use in specified lead-free processes. TI may  
reference these types of products as "Pb-Free".  
RoHS Exempt: TI defines "RoHS Exempt" to mean products that contain lead but are compliant with EU RoHS pursuant to a specific EU RoHS exemption.  
Green: TI defines "Green" to mean the content of Chlorine (Cl) and Bromine (Br) based flame retardants meet JS709B low halogen requirements of <=1000ppm threshold. Antimony trioxide based  
flame retardants must also meet the <=1000ppm threshold requirement.  
(3) MSL, Peak Temp. - The Moisture Sensitivity Level rating according to the JEDEC industry standard classifications, and peak solder temperature.  
(4) There may be additional marking, which relates to the logo, the lot trace code information, or the environmental category on the device.  
(5) Multiple Device Markings will be inside parentheses. Only one Device Marking contained in parentheses and separated by a "~" will appear on a device. If a line is indented then it is a continuation  
of the previous line and the two combined represent the entire Device Marking for that device.  
(6)  
Lead finish/Ball material - Orderable Devices may have multiple material finish options. Finish options are separated by a vertical ruled line. Lead finish/Ball material values may wrap to two  
lines if the finish value exceeds the maximum column width.  
Addendum-Page 2  
PACKAGE OPTION ADDENDUM  
www.ti.com  
21-Aug-2020  
Important Information and Disclaimer:The information provided on this page represents TI's knowledge and belief as of the date that it is provided. TI bases its knowledge and belief on information  
provided by third parties, and makes no representation or warranty as to the accuracy of such information. Efforts are underway to better integrate information from third parties. TI has taken and  
continues to take reasonable steps to provide representative and accurate information but may not have conducted destructive testing or chemical analysis on incoming materials and chemicals.  
TI and TI suppliers consider certain information to be proprietary, and thus CAS numbers and other limited information may not be available for release.  
In no event shall TI's liability arising out of such information exceed the total purchase price of the TI part(s) at issue in this document sold by TI to Customer on an annual basis.  
Addendum-Page 3  
PACKAGE MATERIALS INFORMATION  
www.ti.com  
21-Aug-2020  
TAPE AND REEL INFORMATION  
*All dimensions are nominal  
Device  
Package Package Pins  
Type Drawing  
SPQ  
Reel  
Reel  
A0  
B0  
K0  
P1  
W
Pin1  
Diameter Width (mm) (mm) (mm) (mm) (mm) Quadrant  
(mm) W1 (mm)  
BQ24160ARGER  
BQ24160ARGET  
BQ24160RGER  
BQ24160RGET  
BQ24160YFFR  
BQ24160YFFT  
BQ24161BRGER  
BQ24161BRGET  
BQ24161BYFFR  
BQ24161RGER  
BQ24161RGET  
BQ24161YFFR  
BQ24161YFFT  
BQ24163RGER  
BQ24163RGET  
BQ24163YFFR  
BQ24163YFFT  
BQ24168RGER  
VQFN  
VQFN  
RGE  
RGE  
RGE  
RGE  
YFF  
YFF  
RGE  
RGE  
YFF  
RGE  
RGE  
YFF  
YFF  
RGE  
RGE  
YFF  
YFF  
RGE  
24  
24  
24  
24  
49  
49  
24  
24  
49  
24  
24  
49  
49  
24  
24  
49  
49  
24  
3000  
250  
330.0  
180.0  
330.0  
180.0  
180.0  
180.0  
330.0  
180.0  
180.0  
330.0  
180.0  
180.0  
180.0  
330.0  
180.0  
180.0  
180.0  
330.0  
12.4  
12.4  
12.4  
12.4  
8.4  
4.25  
4.25  
4.25  
4.25  
2.93  
2.93  
4.25  
4.25  
2.93  
4.25  
4.25  
2.93  
2.93  
4.25  
4.25  
2.93  
2.93  
4.25  
4.25  
4.25  
4.25  
4.25  
2.93  
2.93  
4.25  
4.25  
2.93  
4.25  
4.25  
2.93  
2.93  
4.25  
4.25  
2.93  
2.93  
4.25  
1.15  
1.15  
1.15  
1.15  
0.81  
0.81  
1.15  
1.15  
0.81  
1.15  
1.15  
0.81  
0.81  
1.15  
1.15  
0.81  
0.81  
1.15  
8.0  
8.0  
8.0  
8.0  
4.0  
4.0  
8.0  
8.0  
4.0  
8.0  
8.0  
4.0  
4.0  
8.0  
8.0  
4.0  
4.0  
8.0  
12.0  
12.0  
12.0  
12.0  
8.0  
Q2  
Q2  
Q2  
Q2  
Q1  
Q1  
Q2  
Q2  
Q1  
Q2  
Q2  
Q1  
Q1  
Q2  
Q2  
Q1  
Q1  
Q2  
VQFN  
3000  
250  
VQFN  
DSBGA  
DSBGA  
VQFN  
3000  
250  
8.4  
8.0  
3000  
250  
12.4  
12.4  
8.4  
12.0  
12.0  
8.0  
VQFN  
DSBGA  
VQFN  
3000  
3000  
250  
12.4  
12.4  
8.4  
12.0  
12.0  
8.0  
VQFN  
DSBGA  
DSBGA  
VQFN  
3000  
250  
8.4  
8.0  
3000  
250  
12.4  
12.4  
8.4  
12.0  
12.0  
8.0  
VQFN  
DSBGA  
DSBGA  
VQFN  
3000  
250  
8.4  
8.0  
3000  
12.4  
12.0  
Pack Materials-Page 1  
PACKAGE MATERIALS INFORMATION  
www.ti.com  
21-Aug-2020  
Device  
Package Package Pins  
Type Drawing  
SPQ  
Reel  
Reel  
A0  
B0  
K0  
P1  
W
Pin1  
Diameter Width (mm) (mm) (mm) (mm) (mm) Quadrant  
(mm) W1 (mm)  
BQ24168RGET  
BQ24168YFFR  
BQ24168YFFT  
VQFN  
DSBGA  
DSBGA  
RGE  
YFF  
YFF  
24  
49  
49  
250  
3000  
250  
180.0  
180.0  
180.0  
12.4  
8.4  
4.25  
2.93  
2.93  
4.25  
2.93  
2.93  
1.15  
0.81  
0.81  
8.0  
4.0  
4.0  
12.0  
8.0  
Q2  
Q1  
Q1  
8.4  
8.0  
*All dimensions are nominal  
Device  
Package Type Package Drawing Pins  
SPQ  
Length (mm) Width (mm) Height (mm)  
BQ24160ARGER  
BQ24160ARGET  
BQ24160RGER  
BQ24160RGET  
BQ24160YFFR  
BQ24160YFFT  
BQ24161BRGER  
BQ24161BRGET  
BQ24161BYFFR  
BQ24161RGER  
BQ24161RGET  
BQ24161YFFR  
BQ24161YFFT  
BQ24163RGER  
VQFN  
VQFN  
RGE  
RGE  
RGE  
RGE  
YFF  
YFF  
RGE  
RGE  
YFF  
RGE  
RGE  
YFF  
YFF  
RGE  
24  
24  
24  
24  
49  
49  
24  
24  
49  
24  
24  
49  
49  
24  
3000  
250  
367.0  
210.0  
367.0  
210.0  
182.0  
182.0  
367.0  
210.0  
182.0  
367.0  
210.0  
182.0  
182.0  
367.0  
367.0  
185.0  
367.0  
185.0  
182.0  
182.0  
367.0  
185.0  
182.0  
367.0  
185.0  
182.0  
182.0  
367.0  
35.0  
35.0  
35.0  
35.0  
20.0  
20.0  
35.0  
35.0  
20.0  
35.0  
35.0  
20.0  
20.0  
35.0  
VQFN  
3000  
250  
VQFN  
DSBGA  
DSBGA  
VQFN  
3000  
250  
3000  
250  
VQFN  
DSBGA  
VQFN  
3000  
3000  
250  
VQFN  
DSBGA  
DSBGA  
VQFN  
3000  
250  
3000  
Pack Materials-Page 2  
PACKAGE MATERIALS INFORMATION  
www.ti.com  
21-Aug-2020  
Device  
Package Type Package Drawing Pins  
SPQ  
Length (mm) Width (mm) Height (mm)  
BQ24163RGET  
BQ24163YFFR  
BQ24163YFFT  
BQ24168RGER  
BQ24168RGET  
BQ24168YFFR  
BQ24168YFFT  
VQFN  
DSBGA  
DSBGA  
VQFN  
RGE  
YFF  
YFF  
RGE  
RGE  
YFF  
YFF  
24  
49  
49  
24  
24  
49  
49  
250  
3000  
250  
210.0  
182.0  
182.0  
367.0  
210.0  
182.0  
182.0  
185.0  
182.0  
182.0  
367.0  
185.0  
182.0  
182.0  
35.0  
20.0  
20.0  
35.0  
35.0  
20.0  
20.0  
3000  
250  
VQFN  
DSBGA  
DSBGA  
3000  
250  
Pack Materials-Page 3  
GENERIC PACKAGE VIEW  
RGE 24  
VQFN - 1 mm max height  
PLASTIC QUAD FLATPACK - NO LEAD  
Images above are just a representation of the package family, actual package may vary.  
Refer to the product data sheet for package details.  
4204104/H  
PACKAGE OUTLINE  
VQFN - 1 mm max height  
RGE0024H  
PLASTIC QUAD FLATPACK- NO LEAD  
A
4.1  
3.9  
B
4.1  
3.9  
PIN 1 INDEX AREA  
1 MAX  
C
SEATING PLANE  
0.08 C  
0.05  
0.00  
ꢀꢀꢀꢀꢁꢂꢃ“ꢄꢂꢅ  
(0.2) TYP  
2X 2.5  
12  
7
20X 0.5  
6
13  
25  
2X  
SYMM  
2.5  
1
18  
0.30  
PIN 1 ID  
(OPTIONAL)  
24X  
0.18  
24  
19  
0.1  
0.05  
C A B  
C
SYMM  
0.48  
0.28  
24X  
4219016 / A 08/2017  
NOTES:  
1. All linear dimensions are in millimeters. Any dimensions in parenthesis are for reference only. Dimensioning and tolerancing  
per ASME Y14.5M.  
2. This drawing is subject to change without notice.  
3. The package thermal pad must be soldered to the printed circuit board for thermal and mechanical performance.  
www.ti.com  
EXAMPLE BOARD LAYOUT  
VQFN - 1 mm max height  
RGE0024H  
PLASTIC QUAD FLATPACK- NO LEAD  
(3.825)  
2.7)  
(
24  
19  
24X (0.58)  
24X (0.24)  
1
18  
20X (0.5)  
25  
SYMM  
(3.825)  
2X  
(1.1)  
ꢆ‘ꢄꢂꢁꢇꢀ9,$  
TYP  
6
13  
(R0.05)  
7
12  
2X(1.1)  
SYMM  
LAND PATTERN EXAMPLE  
SCALE: 20X  
0.07 MIN  
ALL AROUND  
0.07 MAX  
ALL AROUND  
METAL  
SOLDER MASK  
OPENING  
SOLDER MASK  
OPENING  
METAL UNDER  
SOLDER MASK  
NON SOLDER MASK  
DEFINED  
SOLDER MASK  
DEFINED  
(PREFERRED)  
SOLDER MASK DETAILS  
4219016 / A 08/2017  
NOTES: (continued)  
4. This package is designed to be soldered to a thermal pad on the board. For more information, see Texas Instruments  
literature number SLUA271 (www.ti.com/lit/slua271).  
5. Solder mask tolerances between and around signal pads can vary based on board fabrication site.  
www.ti.com  
EXAMPLE STENCIL DESIGN  
VQFN - 1 mm max height  
RGE0024H  
PLASTIC QUAD FLATPACK- NO LEAD  
(3.825)  
4X ( 1.188)  
24  
19  
24X (0.58)  
24X (0.24)  
1
18  
20X (0.5)  
SYMM  
(3.825)  
(0.694)  
TYP  
6
13  
25  
(R0.05) TYP  
METAL  
TYP  
7
12  
(0.694)  
TYP  
SYMM  
SOLDER PASTE EXAMPLE  
BASED ON 0.125 mm THICK STENCIL  
EXPOSED PAD  
78% PRINTED COVERAGE BY AREA  
SCALE: 20X  
4219016 / A 08/2017  
NOTES: (continued)  
6. Laser cutting apertures with trapezoidal walls and rounded corners may offer better paste release. IPC-7525 may have alternate  
design recommendations..  
www.ti.com  
D: Max = 2.771 mm, Min = 2.71 mm  
E: Max = 2.771 mm, Min = 2.71 mm  
IMPORTANT NOTICE AND DISCLAIMER  
TI PROVIDES TECHNICAL AND RELIABILITY DATA (INCLUDING DATASHEETS), DESIGN RESOURCES (INCLUDING REFERENCE  
DESIGNS), APPLICATION OR OTHER DESIGN ADVICE, WEB TOOLS, SAFETY INFORMATION, AND OTHER RESOURCES “AS IS”  
AND WITH ALL FAULTS, AND DISCLAIMS ALL WARRANTIES, EXPRESS AND IMPLIED, INCLUDING WITHOUT LIMITATION ANY  
IMPLIED WARRANTIES OF MERCHANTABILITY, FITNESS FOR A PARTICULAR PURPOSE OR NON-INFRINGEMENT OF THIRD  
PARTY INTELLECTUAL PROPERTY RIGHTS.  
These resources are intended for skilled developers designing with TI products. You are solely responsible for (1) selecting the appropriate  
TI products for your application, (2) designing, validating and testing your application, and (3) ensuring your application meets applicable  
standards, and any other safety, security, or other requirements. These resources are subject to change without notice. TI grants you  
permission to use these resources only for development of an application that uses the TI products described in the resource. Other  
reproduction and display of these resources is prohibited. No license is granted to any other TI intellectual property right or to any third  
party intellectual property right. TI disclaims responsibility for, and you will fully indemnify TI and its representatives against, any claims,  
damages, costs, losses, and liabilities arising out of your use of these resources.  
TI’s products are provided subject to TI’s Terms of Sale (www.ti.com/legal/termsofsale.html) or other applicable terms available either on  
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Mailing Address: Texas Instruments, Post Office Box 655303, Dallas, Texas 75265  
Copyright © 2020, Texas Instruments Incorporated  

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