BQ78350DBT-R1A [TI]
CEDV 锂离子电池电量监测计和电池管理控制器 | DBT | 30 | -40 to 85;
| 型号： | BQ78350DBT-R1A |
| 厂家： | 
TEXAS INSTRUMENTS |
| 描述： | CEDV 锂离子电池电量监测计和电池管理控制器 | DBT | 30 | -40 to 85 电池 控制器 光电二极管 |
| 文件： | 总32页 (文件大小：1522K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
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BQ78350-R1A
SLUSE05 –DECEMBER 2019
BQ78350-R1A CEDV Li-Ion Gas Gauge and Battery Management Controller Companion to
the BQ769x0 Battery Monitoring AFE
1 Features
2 Applications
1
•
Compensated end-of-discharge voltage (CEDV)
gauging algorithm
•
Light electric vehicles (levs): ebikes, escooters,
pedelec, and pedal-assist bicycles
•
•
Supports SMBus host communication
•
•
Power and gardening tools
Flexible configuration for 3- to 5-series
(BQ76920), 6- to 10-series (BQ76930), and 9- to
15-series (BQ76940) li-ion and LiFePO4 batteries
Battery backup and uninterruptible power supply
(UPS) systems
•
•
•
Wireless base station backup systems
Telecom power systems
•
•
Supports battery configurations up to 320 Ahr
Supports charge and discharge current reporting
up to 320 A
Handheld vacuum cleaners and robot vacuums
•
•
On-chip temperature sensor option
3 Description
The Texas Instruments BQ78350-R1A li-ion and
LiFePO4 Battery Management Controller and
companion to the BQ769x0 family of analog front end
(AFE) protection devices provides a comprehensive
set of Battery Management System (BMS)
External NTC thermistor support from companion
AFE
•
Full array of programmable protection features
–
–
Voltage, current, and temperature
System components
subsystems,
helping
to
accelerate
product
development for faster time-to-market.
•
•
Lifetime data logging
The BQ78350-R1A controller and the BQ769x0 AFE
support 3-series to 15-series cell applications. The
BQ78350-R1A device provides an accurate fuel
gauge and state-of-health (SoH) monitor, as well as
cell balancing and a full range of voltage-, current-,
and temperature-based protection features.
Supports CC-CV charging, including precharge,
charge inhibit, and charge suspend
•
Offers an optional resistor programmable SMBus
slave address for up to eight different bus
addresses
•
•
Drives up to a 5-segment LED or LCD display for
state-of-charge indication
Device Information(1)
PART NUMBER
PACKAGE
BODY SIZE (NOM)
Provides SHA-1 authentication
BQ78350-R1A
TSSOP (30)
7.80 mm x 6.40 mm
(1) For all available packages, see the orderable addendum at
the end of the data sheet.
Simplified Schematic
PACK+
bq76920
BAT
VC5
VC4
VC3
VC2
VC1
VC0
SRP
SRN
ALERT
REGSRC
REGOUT
CAP 1
LED1
LED2
LED3
LED4
LED5
VCC
MRST
BAT
TS 1
SCL
SDA
VSS
CHG
DSG
VAUX
KEYIN
PRES
RBI
PWRM
DISP
PUSH-BUTTON
FOR BOOT
SAFE
VSS
COM
VEN
SCL
SDA
SMBC
SMBC
ALERT
PRECHG
GPIOA
SMBD
SMBA
SMBD
PACK–
ADREN
GPIOB
Copyright © 2017, Texas Instruments Incorporated
1
An IMPORTANT NOTICE at the end of this data sheet addresses availability, warranty, changes, use in safety-critical applications,
intellectual property matters and other important disclaimers. PRODUCTION DATA.
BQ78350-R1A
SLUSE05 –DECEMBER 2019
www.ti.com
Table of Contents
1
2
3
4
5
6
7
Features.................................................................. 1
8
Detailed Description .............................................. 9
8.1 Overview ................................................................... 9
8.2 Functional Block Diagram ....................................... 10
8.3 Feature Description................................................. 10
8.4 Device Functional Modes........................................ 12
8.5 Programming........................................................... 12
Application and Implementation ........................ 13
9.1 Application Information............................................ 13
9.2 Typical Applications ................................................ 13
Applications ........................................................... 1
Description ............................................................. 1
Revision History..................................................... 2
Description (continued)......................................... 3
Pin Configuration and Functions......................... 3
Specifications......................................................... 4
7.1 Absolute Maximum Ratings ...................................... 4
7.2 ESD Ratings.............................................................. 4
7.3 Recommended Operating Conditions....................... 4
7.4 Thermal Information.................................................. 5
7.5 Electrical Characteristics: Supply Current................. 5
7.6 Electrical Characteristics: I/O.................................... 5
7.7 Electrical Characteristics: ADC ................................. 6
7.8 Electrical Characteristics: Power-On Reset.............. 6
7.9 Electrical Characteristics: Oscillator.......................... 6
7.10 Electrical Characteristics: Data Flash Memory ....... 6
7.11 Electrical Characteristics: Register Backup ............ 7
7.12 SMBus Timing Specifications ................................. 7
7.13 Typical Characteristics ........................................... 8
9
10 Power Supply Recommendations ..................... 21
11 Layout................................................................... 21
11.1 Layout Guidelines ................................................. 21
11.2 Layout Example .................................................... 22
12 Device and Documentation Support ................. 23
12.1 Related Documentation......................................... 23
12.2 Support Resources ............................................... 23
12.3 Trademarks........................................................... 23
12.4 Electrostatic Discharge Caution............................ 23
12.5 Glossary................................................................ 23
13 Mechanical, Packaging, and Orderable
Information ........................................................... 23
4 Revision History
NOTE: Page numbers for previous revisions may differ from page numbers in the current version.
Date
Revision
Notes
December 2019
*
Initial Release
2
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5 Description (continued)
The BQ78350-R1A device offers optional LED or LCD display configurations for capacity reporting. It also makes
data available over its SMBus 1.1 interface. Battery history and diagnostic data is also kept within the device in
non-volatile memory and is available over the same interface.
6 Pin Configuration and Functions
30-Pin DBT Package
Pin Functions
PIN
NUMBER
PIN NAME
TYPE
DESCRIPTION
1
2
3
4
COM
ALERT
SDA
O(1)
I
Open-drain output LCD common connection. Leave unconnected if not used.
Input from the BQ769x0 AFE
I/O
I/O
Data transfer to and from the BQ769x0 AFE. Requires a 10-k pullup to VCC
Communication clock to the BQ769x0 AFE. Requires a 10-k pullup to VCC
SCL
Programmable polarity (default is active low) output to enable an optional precharge FET. This pin
requires an external pullup to 2.5 V when configured as active high, and is open drain when
configured as active low.
5
PRECHG
O
6
7
VAUX
BAT
AI
AI
Auxiliary voltage input. If this pin is not used, then it should be tied to VSS.
Translated battery voltage input
Active low input to sense system insertion. This typically requires additional ESD protection. If this
pin is not used, then it should be tied to VSS.
8
PRES
I
A low level indicates application key-switch is inactive on position. A high level causes the DSG
protection FET to open. If this pin is not used, then it should be tied to VSS.
9
KEYIN
SAFE
SMBD
I
10
11
O
Active high output to enforce an additional level of safety protection (for example, fuse blow)
SMBus data open-drain bidirectional pin used to transfer an address and data to and from the
BQ78350-R1A device
I/OD
Active high voltage translation enable. This open drain signal is used to switch the input voltage
divider on/off to reduce the power consumption of the BAT translation divider network.
12
13
VEN
O
SMBus clock open-drain bidirectional pin used to clock the data transfer to and from the BQ78350-
R1A device
SMBC
I/OD
Display control for the LEDs. This pin is typically connected to BQ78350-R1A device REGOUT via
a 100-KΩ resistor and a push-button switch connect to VSS. Not used with LCD display enabled
and can be tied to VSS.
14
DISP
I
15
16
PWRM
LED1
O
O
Power mode state indicator open drain output
LED1/LCD1 display segment that drives an external LED/LCD, depending on the firmware
configuration
(1) I = Input, IA = Analog input, I/O = Input/output, I/OD = Input/Open-drain output, O = Output, OA = Analog output, P = Power
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Pin Functions (continued)
PIN
PIN NAME
NUMBER
TYPE
O
DESCRIPTION
LED2/LCD2 display segment that drives an external LED/LCD, depending on the firmware
configuration
17
18
19
20
LED2
LED3
LED4
LED5
LED3/LCD3 display segment that drives an external LED/LCD, depending on the firmware
configuration
O
LED4/LCD4 display segment that drives an external LED/LCD, depending on the firmware
configuration
O
LED5/LCD5 display segment that drives an external LED/LCD, depending on the firmware
configuration
O
21
22
23
GPIO A
VSS
I/O
—
Configurable Input or Output. If not used, tie to VSS.
Negative supply voltage
VSS
—
Negative supply voltage
Master reset input that forces the device into reset when held low. This pin must be held high for
normal operation.
24
MRST
I
25
26
VSS
VCC
—
P
Negative supply voltage
Positive supply voltage
RAM backup input. Connect a capacitor to this pin and VSS to protect loss of RAM data in case of
short circuit condition.
27
RBI
P
28
29
30
GPIO B
ADREN
SMBA
I/O
O
Configurable input or output. If not used, tie to VSS.
Optional digital signal enables address detection measurement to reduce power consumption.
Optional SMBus address detection input. If this pin is not used, then it should be tied to VSS.
IA
7 Specifications
7.1 Absolute Maximum Ratings
Over operating free-air temperature range (unless otherwise noted)(1)
MIN
–0.3
–0.3
–0.3
–40
MAX
2.75
UNIT
V
VCC relative to VSS
V(IOD) relative to VSS
VI relative to VSS
Supply voltage range
Open-drain I/O pins
6
V
Input voltage range to all other pins
VCC + 0.3
85
V
Operating free-air temperature range, TA
Storage temperature range, Tstg
°C
°C
–65
150
(1) Stresses beyond those listed under absolute maximum ratings may cause permanent damage to the device. These are stress ratings
only, and functional operation of the device at these or any other conditions beyond those indicated under recommended operating
conditions is not implied. Exposure to absolute–maximum–rated conditions for extended periods may affect device reliability.
7.2 ESD Ratings
VALUE
±2000
±500
UNIT
Human Body Model (HBM) ESD stress voltage(1)
Charged Device Model (CDM) ESD stress voltage(2)
V(ESD)
V
(1) JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.
(2) JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process.
7.3 Recommended Operating Conditions
VCC = 2.4 V to 2.6 V, TA = –40°C to 85°C (unless otherwise noted)
MIN
NOM
MAX
2.6
UNIT
VCC
Supply voltage
2.4
2.5
V
SAFE
VCC
5.5
SMBC, SMBD, VEN
V
VO
Output voltage range
ADREN, GPIO A, GPIO B, SDATA, SCLK,
PWRM, LED1...5 (when used as GPO)
VCC
4
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Recommended Operating Conditions (continued)
VCC = 2.4 V to 2.6 V, TA = –40°C to 85°C (unless otherwise noted)
MIN
NOM
MAX
1
UNIT
V
BAT, VAUX, SMBA
SMBD, SMBC, ALERT, DISP, PRES, KEYIN
5.5
VIN
Input voltage range
SDATA, GPIO A, GPIO B, LED1...5 (when
used as GPI)
VCC
85
TOPR
Operating Temperature
–40
°C
7.4 Thermal Information
BQ78350-R1A
TSSOP (DBT)
30 PINS
81.4
THERMAL METRIC(1)
UNIT
RθJA, High K
RθJC(top)
RθJB
Junction-to-ambient thermal resistance
Junction-to-case(top) thermal resistance
16.2
Junction-to-board thermal resistance
34.1
°C/W
ψJT
Junction-to-top characterization parameter
Junction-to-board characterization parameter
Junction-to-case(bottom) thermal resistance
0.4
ψJB
33.6
RθJC(bottom)
n/a
(1) For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application
report, SPRA953.
7.5 Electrical Characteristics: Supply Current
VCC = 2.4 V to 2.6 V, TA = –40°C to 85°C (unless otherwise noted)
PARAMETER
TEST CONDITIONS
No flash programming
SLEEP mode
MIN
TYP
650(1)
300(2)
0.1
MAX
UNIT
μA
ICC
Operating mode current
Low-power storage mode current
I(SLEEP)
μA
I(SHUTDOWN) Low-power SHUTDOWN mode current
SHUTDOWN mode
1
μA
(1) The actual current consumption of this mode fluctuates during operation over a 1-s period. The value shown is an average using the
default data flash configuration.
(2) The actual current consumption of this mode fluctuates during operation over a user-configurable period. The value shown is an average
using the default data flash configuration.
7.6 Electrical Characteristics: I/O
VCC = 2.4 V to 2.6 V, TA = –40°C to 85°C (unless otherwise noted)
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
Output voltage low SMBC, SMBD,
SDATA, SCLK, SAFE, ADREN, VEN,
GPIO A, GPIO B, PWRM
IOL = 0.5 mA
0.4
V
VOL
Output voltage low LED1, LED2, LED3,
LED4, LED5
IOL = 3 mA
0.4
0.8
Output voltage high SMBC, SMBD,
SDATA, SCLK, SAFE, ADREN, VEN,
GPIO A, GPIO B, PWRM
VOH
IOH = –1 mA
VCC – 0.5
–0.3
V
V
V
Input voltage low SMBC, SMBD, SDATA,
SCLK, ALERT, DISP, SMBA, GPIO A,
GPIO B, PRES, KEYIN
VIL
Input voltage high SMBC, SMBD,
SDATA, SCLK, ALERT, SMBA, GPIO A,
GPIO B
2
2
6
VIH
Input voltage high DISP, PRES, KEYIN
Input capacitance
VCC + 0.3
V
CIN
5
pF
µA
ILKG
Input leakage current
1
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7.7 Electrical Characteristics: ADC
VCC = 2.4 V to 2.6 V, TA = –40°C to 85°C (unless otherwise noted)
PARAMETER
TEST CONDITIONS
MIN
–0.2
16
TYP
MAX
UNIT
V
Input voltage range
Conversion time
BAT, VAUX
1
ms
Resolution (no missing codes)
Effective resolution
Integral nonlinearity
Offset error(2)
16
bits
13
14
bits
FSR(1)
±0.03%
140
2.5
250
18
µV
Offset error drift(2)
TA = 25°C to 85°C
µV/°C
Full-scale error(3)
±0.1%
50
±0.7%
Full-scale error drift
Effective input resistance(4)
PPM/°C
8
MΩ
(1) Full-scale reference
(2) Post-calibration performance and no I/O changes during conversion with VSS as the ground reference
(3) Uncalibrated performance. This gain error can be eliminated with external calibration.
(4) The A/D input is a switched-capacitor input. Since the input is switched, the effective input resistance is a measure of the average
resistance.
7.8 Electrical Characteristics: Power-On Reset
VCC = 2.4 V to 2.6 V, TA = –40°C to 85°C (unless otherwise noted)
PARAMETER
TEST CONDITIONS
MIN
1.7
50
TYP
1.8
MAX
1.9
UNIT
V
VIT–
Negative-going voltage input
Power-on reset hysteresis
VHYS
125
200
mV
7.9 Electrical Characteristics: Oscillator
VCC = 2.4 V to 2.6 V, TA = –40°C to 85°C (unless otherwise noted)
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
4.194
3%
2
UNIT
f(OSC)
f(EIO)
Operating frequency
MHz
–3%
–2
0.25%
0.25
2.5
Frequency error(1)(2)
Start-up time(3)
TA = 20°C to 70°C
t(SXO)
5
ms
LOW FREQUENCY OSCILLATOR
f(LOSC)
f(LEIO)
t(LSXO)
Operating frequency
Frequency error(2)(4)
Start-up time(5)
32.768
0.25%
0.25
kHz
–2.5%
–1.5
2.5%
1.5
TA = 20°C to 70°C
500
ms
(1) The frequency error is measured from 4.194 MHz.
(2) The frequency drift is included and measured from the trimmed frequency at VCC = 2.5 V, TA = 25°C.
(3) The start-up time is defined as the time it takes for the oscillator output frequency to be within 1% of the specified frequency.
(4) The frequency error is measured from 32.768 kHz.
(5) The start-up time is defined as the time it takes for the oscillator output frequency to be ±3%.
7.10 Electrical Characteristics: Data Flash Memory
VCC = 2.4 V to 2.6 V, TA = –40°C to 85°C (unless otherwise noted)
PARAMETER
TEST CONDITIONS
See note(1)
See note(1)
See note(1)
See note(1)
MIN
10
TYP
MAX
UNIT
Years
Cycles
ms
Data retention
tDR
Flash programming write-cycles
Word programming time
Flash-write supply current
20,000
t(WORDPROG)
I(DDdPROG)
2
5
10
mA
(1) Specified by design. Not production tested
6
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7.11 Electrical Characteristics: Register Backup
VCC = 2.4 V to 2.6 V, TA = –40°C to 85°C (unless otherwise noted)
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
V(RB) > V(RBMIN), VCC < VIT–
1500
nA
RB data-retention input
current
I(RB)
V(RB) > V(RBMIN), VCC < VIT–, TA = 0°C
to 50°C
40
160
RB data-retention
voltage(1)
V(RB)
1.7
V
(1) Specified by design. Not production tested
7.12 SMBus Timing Specifications
VCC = 2.4 V to 2.6 V, TA = –40°C to 85°C (unless otherwise noted)
PARAMETER
TEST CONDITIONS
MIN
NOM
MAX
UNIT
SMBus operating
frequency
fSMB
SLAVE mode, SMBC 50% duty cycle
10
100
kHz
SMBus master clock
frequency
MASTER mode, no clock low slave
extend
fMAS
51.2
kHz
µs
Bus free time between
start and stop
tBUF
4.7
4
Hold time after
(repeated) start
tHD:STA
µs
Repeated start setup
time
tSU:STA
tSU:STO
4.7
µs
µs
Stop setup time
4
0
RECEIVE mode
tHD:DAT
Data hold time
TRANSMIT mode
300
250
25
ns
tSU:DAT
tTIMEOUT
tLOW
Data setup time
Error signal/detect
Clock low period
Clock high period
See note(1)
35
ms
µs
4.7
4
tHIGH
See note(2)
See note(3)
50
25
Cumulative clock low
slave extend time
tLOW:SEXT
tLOW:MEXT
ms
ns
Cumulative clock low
master extend time
See note(4)
10
tF
Clock/data fall time
Clock/data rise time
(VILMAX – 0.15 V) to (VIHMIN + 0.15 V)
0.9 VCC to (VILMAX – 0.15 V)
300
tR
1000
(1) The BQ78350-R1A device times out when any clock low exceeds tTIMEOUT
.
(2) tHIGH:MAX is minimum bus idle time. SMBC = 1 for t > 50 μs causes a reset of any transaction in progress involving the BQ78350-R1A
device.
(3) tLOW:SEXT is the cumulative time a slave device is allowed to extend the clock cycles in one message from initial start to stop.
(4) tLOW:MEXT is the cumulative time a master device is allowed to extend the clock cycles in one message from initial start to stop.
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Figure 1. SMBus Timing Diagram
7.13 Typical Characteristics
1.2280
1.2275
1.2270
1.2265
1.2260
1.2255
1.2250
1.2245
1.2240
1.2235
1.2230
174.5
174.0
173.5
173.0
172.5
172.0
171.5
171.0
0
20
40
60
80
œ40
œ20
0
20
40
60
80
œ40
œ20
Temperature (°C)
Temperature (°C)
C001
C002
Figure 2. Internal Voltage Reference
Figure 3. ADC Offset Error
8
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Typical Characteristics (continued)
3.05
3.00
2.95
2.90
2.85
2.80
2.75
2.70
2.65
2.60
2.55
32.85
32.80
32.75
32.70
32.65
32.60
32.55
0
20
40
60
80
0
20
40
60
80
œ40
œ20
œ40
œ20
Temperature (°C)
Temperature (°C)
C003
C004
Figure 4. LED Sink Current
Figure 5. LFO Frequency
4.190
4.185
4.180
4.175
4.170
4.165
4.160
0
20
40
60
80
œ40
œ20
Temperature (°C)
C005
Figure 6. HFO Frequency
8 Detailed Description
8.1 Overview
The BQ78350-R1A li-ion and LiFePO4 Battery Management Controller is the companion to the BQ769x0 family
of Analog Front End (AFE) protection devices. This chipset supports 3-series to 15-series cell applications with
capacities up to 320 Ah, and is suitable for a wide range of portable or stationary battery applications. The
BQ78350-R1A device provides an accurate fuel gauge and state-of-health (SoH) monitor, as well as the cell
balancing algorithm and a full range of voltage-, current-, and temperature-based protection features.
The battery data that the BQ78350-R1A device gathers can be accessed via an SMBus 1.1 interface, and state-
of-charge (SoC) data can be displayed through optional LED or LCD display configurations. Battery history and
diagnostic data are also kept within the device in non-volatile memory and are available over the same SMBus
interface.
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8.2 Functional Block Diagram
COM, ALERT,
KEYIN, SAFE,
SMBD, SMBC,
VEN,DISP
SMBA, ADREN,
SDA, SCL,
PRECHG,VAUX,
GPIOA
GPIOB
LED1...5
PWRM
BAT
, PRES
8
8
8
VCC
VSS
Power
Regulation
AND
2
Oscillator
System Clock
32 kHz
Interrupt *
Event*
Interrupt
Controller
Input/Output
MRST
RBI
1
Management
System Clocks
Reset*
Wake Comparator
Event*
Analog Front End
Delta-Sigma ADC
AND
Integrating
Coulomb Counter
Data (8-bit)
SRP
SRN
CoolRISC
CPU
DMAddr(16-bit)
System I /O (13-bit)
PMAddr
(15-bit)
PMInst
(22-bit)
Peripherals
and
Timers
Communications
SMBus
Program Memory
Data Memory
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8.3 Feature Description
The following section provides an overview of the device features. For full details on the BQ78350-R1A features,
refer to the BQ78350-R1A Technical Reference Manual (SLUUBD3).
8.3.1 Primary (1st Level) Safety Features
The BQ78350-R1A device supports a wide range of battery and system protection features that can be
configured. The primary safety features include:
•
•
•
•
Cell over/undervoltage protection
Charge and discharge overcurrent
Short circuit protection
Charge and discharge overtemperature with independent alarms and thresholds for each thermistor
8.3.2 Secondary (2nd Level) Safety Features
The secondary safety features of the BQ78350-R1A device can be used to indicate more serious faults via the
SAFE pin. This pin can be used to blow an in-line fuse to permanently disable the battery pack from charging or
discharging. The secondary safety protection features include:
•
•
•
•
•
Safety overvoltage
Safety undervoltage
Safety overcurrent in charge and discharge
Safety overtemperature in charge and discharge
Charge FET and Precharge FET fault
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Feature Description (continued)
•
•
•
•
Discharge FET fault
Cell imbalance detection
Open thermistor detection
AFE communication fault
8.3.3 Charge Control Features
The BQ78350-R1A charge control features include:
•
Provides a range of options to configure the charging algorithm and its actions based on the application
requirements
•
Reports the appropriate charging current needed for constant current charging, and the appropriate charging
voltage needed for constant voltage charging
•
•
Supports pre-charging/0-volt charging
Supports charge inhibit and charge suspend if battery pack temperature is out of temperature range
8.3.4 Fuel Gauging
The BQ78350-R1A device uses Compensated End-of-Discharge Voltage (CEDV) technology to measure and
calculate the available charge in battery cells. The BQ78350-R1A device accumulates a measure of charge and
discharge currents and compensates the charge current measurement for the temperature and state-of-charge of
the battery. The BQ78350-R1A device estimates self-discharge of the battery and also adjusts the self-discharge
estimation based on temperature.
8.3.5 Lifetime Data Logging
The BQ78350-R1A device offers lifetime data logging, where important measurements are stored for warranty
and analysis purposes. The data monitored includes:
•
•
•
•
•
•
•
•
Lifetime maximum temperature
Lifetime minimum temperature
Lifetime maximum battery cell voltage per cell
Lifetime minimum battery cell voltage per cell
Cycle count
Maximum charge current
Maximum discharge current
Safety events that trigger SafetyStatus() updates. (The 12 most common are tracked.)
8.3.6 Authentication
The BQ78350-R1A device supports authentication by the host using SHA-1.
8.3.7 Battery Parameter Measurements
The BQ78350-R1A device digitally reads BQ769x0 registers containing recent values from the integrating
analog-to-digital converter (CC) for current measurement and a second delta-sigma ADC for individual cell and
temperature measurements.
8.3.7.1 Current and Coulomb Counting
The integrating delta-sigma ADC (CC) in the companion BQ769x0 AFE measures the charge/discharge flow of
the battery by measuring the voltage drop across a small-value sense resistor between the SRP and SRN pins.
The 15-bit integrating ADC measures bipolar signals from –0.20 V to 0.20 V with 15-µV resolution. The AFE
reports charge activity when VSR = V(SRP) – V(SRN) is positive, and discharge activity when VSR = V(SRP) – V(SRN)
is negative. The BQ78350-R1A device continuously monitors the measured current and integrates the digital
signal from the AFE over time, using an internal counter.
To support large battery configurations, the current data can be scaled to ensure accurate reporting through the
SMBus. The data reported is scaled based on the setting of the SpecificationInfo() command.
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Feature Description (continued)
8.3.7.2 Voltage
The BQ78350-R1A device updates the individual series cell voltages through the BQ769x0 at 1-s intervals. The
BQ78350-R1A device configures the BQ769x0 to connect to the selected cells in sequence and uses this
information for cell balancing and individual cell fault functions. The internal 14-bit ADC of the BQ769x0
measures each cell voltage value, which is then communicated digitally to the BQ78350-R1A device where they
are scaled and translated into unit mV. The maximum supported input range of the ADC is 6.075 V.
The BQ78350-R1A device also separately measures the average cell voltage through an external translation
circuit at the BAT pin. This value is specifically used for the fuel gauge algorithm. The external translation circuit
is controlled via the VEN pin so that the translation circuit is only enabled when required to reduce overall power
consumption. For correct operation, VEN requires an external pull-up to VCC, typically 100 k.
In addition to the voltage measurements used by the BQ78350-R1A algorithms, there is an optional auxiliary
voltage measurement capability via the VAUX pin. This feature measures the input on a 1-s update rate and
provides the programmable scaled value through an SMBus command.
To support large battery configurations, the voltage data can be scaled to ensure accurate reporting through the
SMBus. The data reported is scaled based on the setting of the SpecificationInfo() command.
8.3.7.3 Temperature
The BQ78350-R1A device receives temperature information from external or internal temperature sensors in the
BQ769x0 AFE. Depending on the number of series cells supported, the AFE will provide one, two, or three
external thermistor measurements.
8.4 Device Functional Modes
The BQ78350-R1A device supports three power modes to optimize the power consumption:
•
•
•
In NORMAL mode, the device performs measurements, calculations, protection decisions, and data updates
in 1-s intervals. Between these intervals, the device is in a reduced power mode.
In SLEEP mode, the device performs measurements, calculations, protection decisions, and data updates in
adjustable time intervals. Between these intervals, the device is in a reduced power mode.
In SHUTDOWN mode, the device is completely powered down.
The device indicates through the PWRM pin which power mode it is in. This enables other circuits to change
based on the power mode detection criteria of the device.
8.5 Programming
8.5.1 Physical Interface
The device uses SMBus 1.1 with packet error checking (PEC) as an option and is used as a slave only.
8.5.2 SMBus Address
The device determines its SMBus 1.1 slave address through a voltage on SMBA, Pin 30. The voltage is set with
a pair of high-value resistors if an alternate address is required and is measured either upon exit of POR or when
system present is detected. ADREN, Pin 29, may be used to disable the voltage divider after use to reduce
power consumption.
8.5.3 SMBus On and Off State
The device detects an SMBus off state when SMBC and SMBD are logic-low for ≥ 2 seconds. Clearing this state
requires either SMBC or SMBD to transition high. Within 1 ms, the communication bus is available.
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9 Application and Implementation
9.1 Application Information
The BQ78350-R1A Battery Management Controller companion to the BQ769x0 family of battery monitoring AFEs
enables many standard and enhanced battery management features in a 3-series to 15-series li-ion/li-polymer
battery pack.
To design and implement a complete solution, users need the Battery Management Studio (BQSTUDIO) tool to
configure a "golden image" set of parameters for a specific battery pack and application. The BQSTUDIO tool is
a graphical user-interface tool installed on a PC during development. The firmware installed in the product has
default values, which are summarized in the BQ78350-R1A Technical Reference Manual (SLUUBD3). With the
BQSTUDIO tool, users can change these default values to cater to specific application requirements. Once the
system parameters are known (for example, fault trigger thresholds for protection, enable/disable of certain
features for operation, configuration of cells, among others), the data can be saved. This data is referred to as
the "golden image.”
9.2 Typical Applications
The BQ78350-R1A device can be used with the BQ76920, BQ76930, or BQ76940 device, but it is set up, by
default, for a 5-series cell, 4400-mA battery application using the BQ76920 AFE.
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Typical Applications (continued)
9.2.1 Schematic
The schematic is split into two sections: the gas gauge section (Figure 7) and the AFE section (Figure 8).
Figure 7. 5-Series Cell Typical Schematic, Gas Gauge (BQ78350-R1A)
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Typical Applications (continued)
4
° t
1
4
Figure 8. 5-Series Cell Typical Schematic, AFE (BQ76920)
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Typical Applications (continued)
9.2.2 Design Requirements
Table 1 lists the device's default settings and feature configurations when shipped from Texas Instruments.
Table 1. TI Default Settings
Design Parameter
Cell Configuration
Value or State
5s2p (5-series with 1 Parallel)
Design Capacity
4400 mAh
Device Chemistry
Chem ID 1210 (LiCoO2/graphitized carbon)
Cell Over Voltage (per cell)
Cell Under Voltage (per cell)
Overcurrent in CHARGE Mode
Overcurrent in DISCHARGE Mode
Over Load Current
4250 mV
2500 mV
6000 mA
–6000 mA
0.017 V/Rsense across SRP, SRN
Short Circuit in DISCHARGE Mode
Over Temperature in CHARGE Mode
Over Temperature in DISCHARGE Mode
SAFE Pin Activation Enabled
Safety Overvoltage (per cell)
Safety Undervoltage (per cell)
Shutdown Voltage
0.44 V/Rsense across SRP, SRN
55°C
55°C
No
4400 mV
2500 mV
2300 mV
Cell Balancing Enabled
Yes
Internal or External Temperature Sensor
SMB BROADCAST Mode
External Enabled
Disabled
Display Mode (# of bars and LED or LCD)
Dynamic SMB Address Enabled
KEYIN Feature Enabled
5-bar LED
No (SMB Address = 0x16)
No
PRES Feature Enabled
No
9.2.3 Detailed Design Procedure
By default, the BQ78350-R1A device is initially set up to keep the CHG, DSG, and PCHG FETs OFF and many
other features disabled until the appropriate ManufacturingStatus() bit that enables ManufacturerAccess()
commands are received, or when the default Manufacturing Status is changed.
In the first steps to evaluating the device and BQ769x0 AFE, use the ManufacturerAccess() commands to ensure
correct operation of features, and if they are needed in the application. Then enable features' reading for more in-
depth application evaluation.
Prior to using the device, the default settings should be evaluated as the device has many configuration settings
and options. These can be separated into five main areas:
•
•
•
•
•
Measurement System
Gas Gauging
Charging
Protection
Peripheral Features
The key areas of focus are covered in the following sections.
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9.2.3.1 Measurement System
9.2.3.1.1 Cell Voltages
The device is required to be configured in the AFE Cell Map register to determine which cells to measure based
on the physical connections to the BQ76920 AFE. The cell voltage data is available through
CellVoltage1()…CellVoltage5(). The cell voltages are reported as they are physically stacked. For example, if the
device is configured for 3-series cells connected to VC1, VC2, and VC5 per the AFE Cell Map, then the cell
voltages are still reported via CellVoltage1(), CellVoltage2(), and CellVoltage3(), respectively.
For improved accuracy, offset calibration is available for each of these values and can be managed through the
BQSTUDIO tool. The procedure for calibration is described in the BQ78350-R1A Technical Reference Manual
(SLUUBD3) in the Calibration chapter.
9.2.3.1.2 External Average Cell Voltage
This is enabled by default (DA Configuration [ExtAveEN] = 1) and uses the external resistor divider connected
to the VEN and BAT pins to determine the average cell voltage of the battery pack. The average cell voltage is
available through ExtAveCellVoltage().
CAUTION
Care should be taken in the selection of the resistor and FETs used in this divider
circuit as the tolerance and temperature drift of these components can cause
increased measurement error and a gas gauging error if CEDV Gauging Config
[ExtAveCell] = 1 (default = 1).
For improved accuracy, offset and gain calibration is available for this value and can be managed through the
BQSTUDIO tool. The procedure for calibration is described in the BQ78350-R1A Technical Reference Manual
(SLUUBD3) in the Calibration chapter.
9.2.3.1.3 Current
Current data is taken from the BQ76920 and made available through Current(). The selection of the current
sense resistor connected to SRP and SRN of the BQ76920 is very important and there are several factors
involved.
The aim of the sense resistor selection is to use the widest ADC input voltage range possible.
To maximize accuracy, the sense resistor value should be calculated based on the following formula:
RSNS(min) = V(SRP) – V(SRN) / I(max)
(1)
Where: |V(SRP) – V(SRN)| = 200 mV
I(max) = Maximum magnitude of charge of discharge current (transient or DC)
NOTE
RSNS(min) should include tolerance, temperature drift over the application temperature,
and PCB layout tolerances when selecting the actual nominal resistor value.
When selecting the RSNS value, be aware that when selecting a small value, for example,
1 mΩ, then the resolution of the current measurement will be > 1 mA. In the example of
RSNS = 1 mΩ, the current LSB will be 8.44 mA.
For improved accuracy, offset and gain calibration are available for this value and can be managed through the
BQSTUDIO tool. The procedure for calibration is described in the BQ78350-R1A Technical Reference Manual
(SLUUBD3) in the Calibration chapter.
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9.2.3.1.4 Temperature
By default, the 78350 uses an external negative temperature coefficient (NTC) thermistor connected to the
BQ76920 as the source for the Temperature() data. The measurement uses a polynomial expression to
transform the BQ76920 ADC measurement into 0.1°C resolution temperature measurement. The default
polynomial coefficients are calculated using the Semitec 103AT, although other resistances and manufacturers
can be used.
To calculate the External Temp Model coefficients, use the BQ78350-R1 Family Thermistor Coefficient
Calculator shown in the application report, Using the BQ78350-R1 (SLUA924).
For improved accuracy, offset calibration is available for this value and can be managed through the BQSTUDIO
tool. The procedure for calibration is described in the BQ78350-R1A Technical Reference Manual (SLUUBD3) in
the Calibration chapter.
9.2.3.2 Gas Gauging
The default battery chemistry (Chem ID) is 1210, which is a Li-CoO2 type chemistry. The Chem ID should be
updated using BQSTUDIO to select the specific battery used in the application. See the application report, Using
the BQ78350-R1 (SLUA924) for details on selecting the Chem ID.
The default maximum capacity of the battery is 4400 mAh and this should be changed based on the cell and
battery configuration chosen.
The CEDV gas gauging algorithm requires seven coefficients to enable accurate gas gauging. The default values
are generic for Li-CoO2 chemistry, but for accurate gas gauging these coefficients should be re-calculated. The
procedure to gather the required data and generate the coefficients can be found at
http://www.ti.com/tool/GPCCEDV.
More details on the required steps to set up the BQ78350-R1A device for gas gauging can be found in the
application report, Using the BQ78350-R1 (SLUA924).
9.2.3.3 Charging
The charging algorithm in the BQ78350-R1A device is configured to support Constant Voltage/Constant Current
(CC/CV) charging of a nominal 18-V, 4400-mAh battery.
9.2.3.3.1 Fast Charging Voltage
The charging voltage is configured (Fast Charging: Voltage) based on an individual cell basis (for example, 4200
mV), but the ChargingVoltage() is reported as the required battery voltage (for example, 4200 mV × 5 =
21000 mV).
9.2.3.3.2 Fast Charging Current
The fast charging current is configured to 2000 mA (Fast Charging: Current) by default, which is conservative for
the majority of 4400-mAh battery applications. This should be configured based on the battery configuration, cell
manufacturer's data sheet, and system power design requirements.
9.2.3.3.3 Other Charging Modes
The BQ78350-R1A device is configured to limit, through external components, and report either low or 0
ChargingVoltage() and ChargingCurrent(), based on temperature, voltage, and fault status information.
The Charge Algorithm section of the BQ78350-R1A Technical Reference Manual (SLUUBD3) details these
features and settings.
9.2.3.4 Protection
The safety features and settings of the BQ78350-R1A device are configured conservatively and are suitable for
bench evaluation. However, in many cases, users will need to change these values to meet system
requirements. These values should not be changed to exceed the safe operating limits provided by the cell
manufacturer and any industry standard.
For details on the safety features and settings, see the Protections and Permanent Fail sections of the
BQ78350-R1A Technical Reference Manual (SLUUBD3).
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9.2.3.5 Peripheral Features
9.2.3.5.1 LED Display
The BQ78350-R1A device is configured by default to display up to five LEDs in a bar graph configuration based
on the value of RemainingStateOfCharge() (RSOC). Each LED represents 20% of RSOC and is illuminated
when the BQ78350-R1A DISP pin transitions low, and remains on for a programmable period of time.
In addition to many other options, the number of LEDs used and the percentage at which they can be illuminated
are configurable.
9.2.3.5.2 SMBus Address
Although the SMBus slave address is a configurable value in the BQ78350-R1A device, this feature is disabled
by default and the slave address is 0x16. The SMBus Address feature can allow up to nine different addresses
based on external resistor value variation per address.
The default setup of the BQ78350-R1A device is generic, but there are many additional features that can be
enabled and configured to support a variety of system requirements. These are detailed in the BQ78350-R1A
Technical Reference Manual (SLUUBD3).
9.2.4 Application Performance Plots
When the BQ78350-R1A device is powered up, there are several signals that are enabled at the same time.
Figure 9 shows the rise time of each of the applicable signals.
Figure 9. VCC, MRST, VEN, and PWRM upon Power Up
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The BQ78350-R1A device takes a short period of time to boot up before the device can begin updating battery
parameter data that can be then reported via the SMBus or the optional display. Normal operation after boot-up
is indicated by the VEN pin pulsing to enable voltage data measurements for the ExtAveCell() function. Figure 10
shows the timing of these signals.
Figure 10. Valid VCC to Full FW Operation
Figure 11, Figure 12, Figure 13, and Figure 14 show Measurement System Performance Data of the BQ78350-
R1A device + the BQ76920 EVM. This data was taken using a standard BQ76920 EVM with power supplies
providing the voltage and current reference inputs.
10
8
10
8
At 4200mV
At 2000mA
6
6
4
4
2
2
0
0
œ2
œ4
œ6
œ8
œ10
œ2
œ4
œ6
œ8
œ10
0
20
40
60
80
100
œ40
œ20
0
20
40
60
80
œ20
Forced Temperature (°C)
Forced Temperature (°C)
C006
C008
Figure 11. Cell Voltage Error Reported Through
Figure 12. Battery Charge Current Error Reported Through
CellVoltage1…5()
Current()
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6
4
At œ2000mA
8
6
2
4
0
2
œ2
œ4
œ6
œ8
œ10
œ12
œ14
0
œ2
œ4
œ6
œ8
œ10
0
20
40
60
80
0
20
40
60
80
œ20
œ20
Forced Temperature (°C)
Forced Temperature (°C)
C009
C007
Figure 13. Battery Discharge Current Error Reported
Figure 14. Battery Temperature (External) Error Reported
Through Current()
Through Temperature()
10 Power Supply Recommendations
The BQ78350-R1A device is powered directly from the 2.5-V REGOUT pin of the BQ769x0 companion AFE. An
input capacitor of 0.1 µF is required between VCC and VSS and should be placed as close to the BQ78350-R1A
device as possible.
To ensure correct power up of the BQ78350-R1A device, a 100-k resistor between MRST and VCC is also
required. See the Schematic for further details.
11 Layout
11.1 Layout Guidelines
11.1.1 Power Supply Decoupling Capacitor
Power supply decoupling from VCC to ground is important for optimal operation of the BQ78350-R1A device. To
keep the loop area small, place this capacitor next to the IC and use the shortest possible traces. A large-loop
area renders the capacitor useless and forms a small-loop antenna for noise pickup.
Ideally, the traces on each side of the capacitor must be the same length and run in the same direction to avoid
differential noise during ESD. If possible, place a via near the VSS pin to a ground plane layer.
Placement of the RBI capacitor is not as critical. It can be placed further away from the IC.
11.1.2 MRST Connection
The MRST pin controls the gas gauge reset state. The connections to this pin must be as short as possible to
avoid any incoming noise. Direct connection to VCC is possible if the reset functionality is not desired or
necessary.
If unwanted resets are found, one or more of the following solutions may be effective:
•
•
•
Add a 0.1-μF capacitor between MRST and ground.
Provide a 1-kΩ pullup resistor to VCC at MRST.
Surround the entire circuit with a ground pattern.
If a test point is added at MRST, it must be provided with a 10-kΩ series resistor.
11.1.3 Communication Line Protection Components
The 5.6-V Zener diodes, which protect the BQ78350-R1A communication pins from ESD, must be located as
close as possible to the pack connector. The grounded end of these Zener diodes must be returned to the
PACK(–) node, rather than to the low-current digital ground system. This way, ESD is diverted away from the
sensitive electronics as much as possible.
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Layout Guidelines (continued)
11.1.4 ESD Spark Gap
Protect the SMBus clock, data, and other communication lines from ESD with a spark gap at the connector. The
following pattern is recommended, with 0.2-mm spacing between the points.
Figure 15. Recommended Spark-Gap Pattern Helps Protect Communication Lines From ESD
11.2 Layout Example
C21
C22
bq78350
VCC
RBI
Figure 16. BQ78350-R1A Layout
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12 Device and Documentation Support
12.1 Related Documentation
For related documentation, see the following:
•
•
•
BQ78350-R1A Technical Reference Manual (SLUUC78)
Using the BQ78350-R1 Application Report (SLUA924)
BQ769x0 3-Series to 15-Series Cell Battery Monitor Family for Li-Ion and Phosphate Applications Data
Manual (SLUSBK2)
12.2 Support Resources
TI E2E™ support forums are an engineer's go-to source for fast, verified answers and design help — straight
from the experts. Search existing answers or ask your own question to get the quick design help you need.
Linked content is provided "AS IS" by the respective contributors. They do not constitute TI specifications and do
not necessarily reflect TI's views; see TI's Terms of Use.
12.3 Trademarks
E2E is a trademark of Texas Instruments.
All other trademarks are the property of their respective owners.
12.4 Electrostatic Discharge Caution
This integrated circuit can be damaged by ESD. Texas Instruments recommends that all integrated circuits be handled with
appropriate precautions. Failure to observe proper handling and installation procedures can cause damage.
ESD damage can range from subtle performance degradation to complete device failure. Precision integrated circuits may be more
susceptible to damage because very small parametric changes could cause the device not to meet its published specifications.
12.5 Glossary
SLYZ022 — TI Glossary.
This glossary lists and explains terms, acronyms, and definitions.
13 Mechanical, Packaging, and Orderable Information
The following pages include mechanical, packaging, and orderable information. This information is the most
current data available for the designated devices. This data is subject to change without notice and revision of
this document. For browser-based versions of this data sheet, refer to the left-hand navigation.
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PACKAGE OPTION ADDENDUM
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10-Dec-2020
PACKAGING INFORMATION
Orderable Device
Status Package Type Package Pins Package
Eco Plan
Lead finish/
Ball material
MSL Peak Temp
Op Temp (°C)
Device Marking
Samples
Drawing
Qty
(1)
(2)
(3)
(4/5)
(6)
BQ78350DBT-R1A
BQ78350DBTR-R1A
ACTIVE
ACTIVE
TSSOP
TSSOP
DBT
DBT
30
30
60
RoHS & Green
NIPDAU
Level-2-260C-1 YEAR
Level-2-260C-1 YEAR
-40 to 85
-40 to 85
78350R1A
78350R1A
2000 RoHS & Green
NIPDAU
(1) The marketing status values are defined as follows:
ACTIVE: Product device recommended for new designs.
LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect.
NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design.
PREVIEW: Device has been announced but is not in production. Samples may or may not be available.
OBSOLETE: TI has discontinued the production of the device.
(2) RoHS: TI defines "RoHS" to mean semiconductor products that are compliant with the current EU RoHS requirements for all 10 RoHS substances, including the requirement that RoHS substance
do not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, "RoHS" products are suitable for use in specified lead-free processes. TI may
reference these types of products as "Pb-Free".
RoHS Exempt: TI defines "RoHS Exempt" to mean products that contain lead but are compliant with EU RoHS pursuant to a specific EU RoHS exemption.
Green: TI defines "Green" to mean the content of Chlorine (Cl) and Bromine (Br) based flame retardants meet JS709B low halogen requirements of <=1000ppm threshold. Antimony trioxide based
flame retardants must also meet the <=1000ppm threshold requirement.
(3) MSL, Peak Temp. - The Moisture Sensitivity Level rating according to the JEDEC industry standard classifications, and peak solder temperature.
(4) There may be additional marking, which relates to the logo, the lot trace code information, or the environmental category on the device.
(5) Multiple Device Markings will be inside parentheses. Only one Device Marking contained in parentheses and separated by a "~" will appear on a device. If a line is indented then it is a continuation
of the previous line and the two combined represent the entire Device Marking for that device.
(6)
Lead finish/Ball material - Orderable Devices may have multiple material finish options. Finish options are separated by a vertical ruled line. Lead finish/Ball material values may wrap to two
lines if the finish value exceeds the maximum column width.
Important Information and Disclaimer:The information provided on this page represents TI's knowledge and belief as of the date that it is provided. TI bases its knowledge and belief on information
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Addendum-Page 1
PACKAGE OPTION ADDENDUM
www.ti.com
10-Dec-2020
Addendum-Page 2
PACKAGE MATERIALS INFORMATION
www.ti.com
5-Jan-2022
TAPE AND REEL INFORMATION
*All dimensions are nominal
Device
Package Package Pins
Type Drawing
SPQ
Reel
Reel
A0
B0
K0
P1
W
Pin1
Diameter Width (mm) (mm) (mm) (mm) (mm) Quadrant
(mm) W1 (mm)
BQ78350DBTR-R1A
TSSOP
DBT
30
2000
330.0
16.4
6.95
8.3
1.6
8.0
16.0
Q1
Pack Materials-Page 1
PACKAGE MATERIALS INFORMATION
www.ti.com
5-Jan-2022
*All dimensions are nominal
Device
Package Type Package Drawing Pins
TSSOP DBT 30
SPQ
Length (mm) Width (mm) Height (mm)
367.0 367.0 38.0
BQ78350DBTR-R1A
2000
Pack Materials-Page 2
PACKAGE MATERIALS INFORMATION
www.ti.com
5-Jan-2022
TUBE
*All dimensions are nominal
Device
Package Name Package Type
DBT TSSOP
Pins
SPQ
L (mm)
W (mm)
T (µm)
B (mm)
BQ78350DBT-R1A
30
60
530
10.2
3600
3.5
Pack Materials-Page 3
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