CD54HC11_14 [TI]
High-Speed CMOS Logic Triple 3-Input AND Gate;型号: | CD54HC11_14 |
厂家: | TEXAS INSTRUMENTS |
描述: | High-Speed CMOS Logic Triple 3-Input AND Gate 栅 |
文件: | 总6页 (文件大小:36K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
CD54/74HC11,
CD54/74HCT11
Data sheet acquired from Harris Semiconductor
SCHS273A
High Speed CMOS Logic
Triple 3-Input AND Gate
August 1997 - Revised May 2000
Features
Description
• Buffered Inputs
The ’HC11 and ’HCT11 logic gates utilize silicon gate CMOS
technology to achieve operating speeds similar to LSTTL
gates with the low power consumption of standard CMOS
integrated circuits. All devices have the ability to drive 10
LSTTL loads. The HCT logic family is functionally pin
compatible with the standard LS logic family.
• Typical Propagation Delay: 8ns at V
o
= 5V,
[ /Title
(CD54
HCT11
,
CD74
HC11,
CD74
HCT11
)
CC
C = 15pF, T = 25 C
L
A
• Fanout (Over Temperature Range)
- Standard Outputs. . . . . . . . . . . . . . . 10 LSTTL Loads
- Bus Driver Outputs . . . . . . . . . . . . . 15 LSTTL Loads
Ordering Information
o
o
• Wide Operating Temperature Range . . . -55 C to 125 C
• Balanced Propagation Delay and Transition Times
TEMP. RANGE
o
PART NUMBER
CD54HC11F
( C)
PACKAGE
14 Ld CERDIP
14 Ld CERDIP
14 Ld PDIP
• Significant Power Reduction Compared to LSTTL
Logic ICs
-55 to 125
-55 to 125
-55 to 125
-55 to 125
-55 to 125
-55 to 125
-55 to 125
-55 to 125
/Sub-
ject
(High
CD54HC11F3A
CD74HC11E
CD74HC11M
CD54HCT11F
CD54HCT11F3A
CD74HCT11E
CD74HCT11M
NOTES:
• HC Types
- 2V to 6V Operation
- High Noise Immunity: N = 30%, N = 30% of V
IL IH CC
14 Ld SOIC
at V
= 5V
CC
14 Ld CERDIP
14 Ld CERDIP
14 Ld PDIP
• HCT Types
- 4.5V to 5.5V Operation
- Direct LSTTL Input Logic Compatibility,
V = 0.8V (Max), V = 2V (Min)
IL IH
14 Ld SOIC
- CMOS Input Compatibility, I ≤ 1µA at V , V
OL OH
l
1. When ordering, use the entire part number. Add the suffix 96 to
obtain the variant in the tape and reel.
2. Die for this part number is available which meets all electrical
specifications. Please contact your local TI sales office or cus-
tomer service for ordering information.
Pinout
CD54HC11, CD54HCT11
(CERDIP)
CD54HCT11, CD74HC11, CD74HCT11
(PDIP, SOIC)
TOP VIEW
1A
1B
1
2
3
4
5
6
7
14 V
CC
13 1C
12 1Y
11 3C
10 3B
2A
2B
2C
2Y
9
8
3A
3Y
GND
CAUTION: These devices are sensitive to electrostatic discharge. Users should follow proper IC Handling Procedures.
Copyright © 2000, Texas Instruments Incorporated
1
CD54/74HC11, CD54/74HCT11
Functional Diagram
14
13
12
11
10
9
1
2
3
4
5
6
7
V
1A
1B
CC
1C
1Y
3C
3B
3A
3Y
2A
2B
2C
2Y
8
GND
TRUTH TABLE
INPUTS
OUTPUT
nA
L
nB
L
nC
nY
L
L
H
L
L
L
L
L
H
H
L
L
L
H
L
L
H
H
H
H
L
L
H
L
L
H
H
L
H
H
Logic Symbol
nA
nB
nC
nY
2
CD54/74HC11, CD54/74HCT11
Absolute Maximum Ratings
Thermal Information
o
o
DC Supply Voltage, V
. . . . . . . . . . . . . . . . . . . . . . . . -0.5V to 7V
Thermal Resistance (Typical, Note 3)
θ
( C/W)
θ
( C/W)
CC
DC Input Diode Current, I
For V < -0.5V or V > V
JA
JC
PDIP Package . . . . . . . . . . . . . . . . . . .
CERDIP Package . . . . . . . . . . . . . . . .
SOIC Package. . . . . . . . . . . . . . . . . . .
100
130
180
N/A
55
N/A
IK
+ 0.5V. . . . . . . . . . . . . . . . . . . . . .±20mA
OK
For V < -0.5V or V > V
I
I
CC
DC Output Diode Current, I
o
+ 0.5V . . . . . . . . . . . . . . . . . . . .±20mA
Maximum Junction Temperature (Hermetic Package or Die) . . . 175 C
Maximum Junction Temperature (Plastic Package) . . . . . . . . 150 C
Maximum Storage Temperature Range . . . . . . . . . .-65 C to 150 C
Maximum Lead Temperature (Soldering 10s). . . . . . . . . . . . . 300 C
O
O
CC
o
DC Output Source or Sink Current per Output Pin, I
O
o
o
For V > -0.5V or V < V
+ 0.5V . . . . . . . . . . . . . . . . . . . .±25mA
O
O
CC
o
DC V
or Ground Current, I
I
. . . . . . . . . . . . . . . . . .±50mA
CC
CC or GND
(SOIC - Lead Tips Only)
Operating Conditions
o
o
Temperature Range (T ) . . . . . . . . . . . . . . . . . . . . . -55 C to 125 C
A
Supply Voltage Range, V
CC
HC Types . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .2V to 6V
HCT Types . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .4.5V to 5.5V
DC Input or Output Voltage, V , V . . . . . . . . . . . . . . . . . 0V to V
I
O
CC
Input Rise and Fall Time
2V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1000ns (Max)
4.5V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500ns (Max)
6V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 400ns (Max)
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation
of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
3. θ is measured with the component mounted on an evaluation PC board in free air.
JA
DC Electrical Specifications
TEST
CONDITIONS
o
o
o
o
o
25 C
-40 C TO 85 C
-55 C TO 125 C
PARAMETER
HC TYPES
SYMBOL V (V)
I
(mA)
V
(V) MIN TYP MAX
MIN
MAX
MIN
MAX
UNITS
I
O
CC
High Level Input
Voltage
V
-
-
-
2
1.5
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
1.5
-
1.5
-
-
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
µA
IH
4.5
3.15
-
-
3.15
-
-
3.15
6
2
4.2
4.2
4.2
-
Low Level Input
Voltage
V
-
-
0.5
1.35
1.8
-
-
0.5
1.35
1.8
-
-
0.5
1.35
1.8
-
IL
4.5
6
-
-
-
-
-
-
High Level Output
Voltage
CMOS Loads
V
V
or
-0.02
2
1.9
1.9
1.9
OH
IH
V
IL
-0.02
-0.02
-
4.5
6
4.4
-
4.4
-
4.4
-
5.9
-
5.9
-
5.9
-
High Level Output
Voltage
TTL Loads
-
-
-
-
-
-
-
-4
4.5
6
3.98
-
3.84
-
3.7
-
-5.2
0.02
0.02
0.02
-
5.48
-
5.34
-
5.2
-
Low Level Output
Voltage
V
V
or
2
-
-
-
-
-
-
-
0.1
0.1
0.1
-
-
-
-
-
-
-
-
0.1
0.1
0.1
-
-
-
-
-
-
-
-
0.1
0.1
0.1
-
OL
IH
V
IL
4.5
6
Low Level Output
Voltage
TTL Loads
-
4
4.5
6
0.26
0.26
±0.1
0.33
0.33
±1
0.4
0.4
±1
5.2
-
Input Leakage
Current
I
V
or
6
I
CC
GND
3
CD54/74HC11, CD54/74HCT11
DC Electrical Specifications (Continued)
TEST
CONDITIONS
o
o
o
o
o
25 C
-40 C TO 85 C
-55 C TO 125 C
PARAMETER
SYMBOL V (V)
I
(mA)
V
(V) MIN TYP MAX
MIN
MAX
MIN
MAX
UNITS
I
O
CC
Quiescent Device
Current
I
V
GND
or
0
6
-
-
2
-
20
-
40
µA
CC
CC
HCT TYPES
High Level Input
Voltage
V
-
-
-
-
4.5 to
5.5
2
-
-
-
-
-
-
0.8
-
2
-
-
0.8
-
2
-
-
0.8
-
V
V
V
V
IH
Low Level Input
Voltage
V
4.5 to
5.5
IL
High Level Output
Voltage CMOS Loads
V
V
or
IH
-0.02
4.5
4.4
3.98
4.4
3.84
4.4
3.7
OH
V
IL
High Level Output
Voltage
-4
4.5
-
-
-
TTL Loads
Low Level Output
Voltage
CMOS Loads
V
V
V
or
IH
0.02
4.5
4.5
5.5
5.5
-
-
-
-
-
0.1
-
-
-
0.1
0.33
±1
-
-
-
0.1
0.4
±1
V
V
OL
IL
Low Level Output
Voltage
TTL Loads
4
-
0.26
±0.1
Input Leakage
Current
I
V
and
GND
µA
I
CC
Quiescent Device
Current
I
V
or
-
-
-
-
-
2
-
-
20
-
-
40
µA
µA
CC
CC
GND
Additional Quiescent
Device Current Per
Input Pin: 1 Unit Load
(Note 4)
∆I
CC
V
4.5 to
5.5
100
360
450
490
CC
- 2.1
NOTE:
4. For dual-supply systems theorectical worst case (V = 2.4V, V
I
= 5.5V) specification is 1.8mA.
CC
HCT Input Loading Table
INPUT
All
UNIT LOADS
0.5
NOTE: Unit Load is ∆I
Specifications table, e.g. 360µA max at 25 C.
limit specified in DC Electrical
o
CC
Switching Specifications Input t , t = 6ns
r
f
o
o
o
o
o
25 C
-40 C TO 85 C -55 C TO 125 C
TEST
V
CC
PARAMETER
HC TYPES
SYMBOL CONDITIONS (V)
MIN TYP MAX
MIN
MAX
MIN
MAX
UNITS
Propagation Delay,
Input to Output (Figure 1)
t
, t
PLH PHL
C = 50pF
2
4.5
6
-
-
-
-
-
-
100
20
17
-
-
-
-
-
125
25
21
-
-
-
-
-
150
30
26
-
ns
ns
ns
ns
L
-
Propagation Delay, Data Input to
Output Y
t , t
PLH PHL
C = 15pF
5
8
L
4
CD54/74HC11, CD54/74HCT11
Switching Specifications Input t , t = 6ns (Continued)
r
f
o
o
o
o
o
25 C
-40 C TO 85 C -55 C TO 125 C
TEST
V
CC
PARAMETER
SYMBOL CONDITIONS (V)
MIN TYP MAX
MIN
MAX
95
19
16
10
-
MIN
MAX
110
22
UNITS
ns
Transition Times (Figure 1)
t
, t
TLH THL
C = 50pF
2
4.5
6
-
-
-
-
-
-
-
75
15
13
10
-
-
-
-
-
-
-
-
-
-
-
L
ns
-
19
ns
Input Capacitance
C
C = 50pF
-
-
10
pF
I
L
Power Dissipation Capacitance
(Notes 5, 6)
C
C = 15pF
5
26
-
pF
PD
L
HCT TYPES
Propagation Delay, Input to
Output (Figure 2)
t
, t
PLH PHL
C = 50pF
4.5
5
-
-
-
28
-
-
-
35
-
-
-
42
-
ns
ns
L
Propagation Delay, Data Input to
Output Y
t , t
PLH PHL
C = 15pF
11
L
Transition Times (Figure 2)
Input Capacitance
t
, t
TLH THL
C = 50pF
4.5
-
-
-
-
-
-
15
10
-
-
-
-
19
10
-
-
-
-
22
10
-
ns
pF
pF
L
C
C = 50pF
L
I
Power Dissipation Capacitance
(Notes 5, 6)
C
-
5
28
PD
NOTES:
5. C
is used to determine the dynamic power consumption, per gate.
2
PD
6. P = V
f (C
PD
+ C ) where f = input frequency, C = output load capacitance, V = supply voltage.
CC
D
CC
i
L
i
L
Test Circuits and Waveforms
t = 6ns
f
t = 6ns
t = 6ns
t = 6ns
r
r
f
V
3V
CC
90%
50%
10%
2.7V
1.3V
0.3V
INPUT
INPUT
GND
GND
t
t
t
t
THL
TLH
THL
TLH
90%
1.3V
90%
50%
10%
INVERTING
OUTPUT
INVERTING
OUTPUT
10%
t
t
PLH
PHL
t
t
PLH
PHL
FIGURE 1. HC TRANSITION TIMES AND PROPAGATION
DELAY TIMES, COMBINATION LOGIC
FIGURE 2. HCT TRANSITION TIMES AND PROPAGATION
DELAY TIMES, COMBINATION LOGIC
5
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accordance with TI’s standard warranty. Testing and other quality control techniques are utilized to the extent
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Customers are responsible for their applications using TI components.
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Copyright 2000, Texas Instruments Incorporated
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