CD54HCT20 [TI]
High-Speed CMOS Logic Dual 4-Input NAND Gate; 高速CMOS逻辑双路4输入与非门
| 型号： | CD54HCT20 |
| 厂家： | 
TEXAS INSTRUMENTS |
| 描述： | High-Speed CMOS Logic Dual 4-Input NAND Gate |
| 文件： | 总9页 (文件大小：257K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
CD54HC20, CD74HC20,
CD54HCT20, CD74HCT20
Data sheet acquired from Harris Semiconductor
SCHS130C
High-Speed CMOS Logic
Dual 4-Input NAND Gate
August 1997 - Revised September 2003
Features
Description
• Buffered Inputs
The ’HC20 and ’HCT20 logic gates utilize silicon gate CMOS
technology to achieve operating speeds similar to LSTTL
gates with the low power consumption of standard CMOS
integrated circuits. All devices have the ability to drive 10
LSTTL loads. The HCT logic family is functionally pin
compatible with the standard LS logic family.
• Typical Propagation Delay: 8ns at V
o
= 5V,
[ /Title
(CD74H
C20,
CD74H
CT20)
/Subject
(High
Speed
CMOS
Logic
Dual 4-
Input
CC
C = 15pF, T = 25 C
L
A
• Fanout (Over Temperature Range)
- Standard Outputs. . . . . . . . . . . . . . . 10 LSTTL Loads
- Bus Driver Outputs . . . . . . . . . . . . . 15 LSTTL Loads
Ordering Information
o
o
• Wide Operating Temperature Range . . . -55 C to 125 C
• Balanced Propagation Delay and Transition Times
TEMP. RANGE
o
PART NUMBER
CD54HC20F3A
CD54HCT20F3A
CD74HC20E
( C)
PACKAGE
14 Ld CERDIP
14 Ld CERDIP
14 Ld PDIP
14 Ld SOIC
14 Ld SOIC
14 Ld SOIC
14 Ld PDIP
14 Ld SOIC
14 Ld SOIC
14 Ld SOIC
• Significant Power Reduction Compared to LSTTL
Logic ICs
-55 to 125
-55 to 125
-55 to 125
-55 to 125
-55 to 125
-55 to 125
-55 to 125
-55 to 125
-55 to 125
-55 to 125
• HC Types
- 2V to 6V Operation
- High Noise Immunity: N = 30%, N = 30% of V
IL IH CC
CD74HC20M
at V
= 5V
CC
CD74HC20MT
CD74HC20M96
CD74HCT20E
CD74HCT20M
CD74HCT20MT
CD74HCT20M96
• HCT Types
- 4.5V to 5.5V Operation
- Direct LSTTL Input Logic Compatibility,
V = 0.8V (Max), V = 2V (Min)
IL IH
- CMOS Input Compatibility, I ≤ 1µA at V , V
OL OH
l
NOTE: When ordering, use the entire part number. The suffix 96
denotes tape and reel. The suffix T denotes a small-quantity reel
of 250.
Pinout
CD54HC20, CD54HCT20
(CERDIP)
CD74HC20, CD74HCT20
(PDIP, SOIC)
TOP VIEW
1A
1B
1
2
3
4
5
6
7
14 V
CC
13 2D
12 2C
11 NC
10 2B
NC
1C
1D
1Y
9
8
2A
2Y
GND
CAUTION: These devices are sensitive to electrostatic discharge. Users should follow proper IC Handling Procedures.
Copyright © 2003, Texas Instruments Incorporated
1
CD54HC20, CD74HC20, CD54HCT20, CD74HCT20
Functional Diagram
1
2
3
4
5
6
7
14
13
12
11
10
9
1A
1B
V
CC
2D
2C
NC
2B
2A
2Y
NC
1C
1D
1Y
8
GND
TRUTH TABLE
INPUTS
OUTPUT
nA
L
nB
nC
X
nD
nY
H
H
H
H
L
X
L
X
X
X
L
X
X
X
X
X
H
L
X
X
H
H
H
H = High Voltage Level, L = Low Voltage Level, X = Irrelevant
HC Logic Symbol
HCT Logic Symbol
nA
nA
nB
nY
nB
nC
nD
nY
nC
nD
2
CD54HC20, CD74HC20, CD54HCT20, CD74HCT20
Absolute Maximum Ratings
Thermal Information
o
DC Supply Voltage, V
. . . . . . . . . . . . . . . . . . . . . . . . -0.5V to 7V
Thermal Resistance (Typical, Note 1)
θ
( C/W)
CC
DC Input Diode Current, I
For V < -0.5V or V > V
JA
IK
E (PDIP) Package . . . . . . . . . . . . . . . . . . . . . . . . . .
M (SOIC) Package. . . . . . . . . . . . . . . . . . . . . . . . . .
80
86
+ 0.5V. . . . . . . . . . . . . . . . . . . . . .±20mA
OK
For V < -0.5V or V > V
I
I
CC
o
DC Output Diode Current, I
Maximum Junction Temperature . . . . . . . . . . . . . . . . . . . . . . . 150 C
Maximum Storage Temperature Range . . . . . . . . . .-65 C to 150 C
Maximum Lead Temperature (Soldering 10s). . . . . . . . . . . . . 300 C
o
o
+ 0.5V . . . . . . . . . . . . . . . . . . . .±20mA
O
O
CC
o
DC Output Source or Sink Current per Output Pin, I
O
For V > -0.5V or V < V
+ 0.5V . . . . . . . . . . . . . . . . . . . .±25mA
O
O
CC
(SOIC - Lead Tips Only)
DC V
or Ground Current, I
I
. . . . . . . . . . . . . . . . . .±50mA
CC
CC or GND
Operating Conditions
o
o
Temperature Range (T ) . . . . . . . . . . . . . . . . . . . . . -55 C to 125 C
A
Supply Voltage Range, V
CC
HC Types . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .2V to 6V
HCT Types . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .4.5V to 5.5V
DC Input or Output Voltage, V , V . . . . . . . . . . . . . . . . . 0V to V
I
O
CC
Input Rise and Fall Time
2V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1000ns (Max)
4.5V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500ns (Max)
6V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 400ns (Max)
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation
of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
1. The package thermal impedance is calculated in accordance with JESD 51-7.
DC Electrical Specifications
TEST
CONDITIONS
o
o
o
o
o
25 C
-40 C TO 85 C
-55 C TO 125 C
PARAMETER
HC TYPES
SYMBOL V (V)
I
(mA)
V
(V) MIN TYP MAX
MIN
MAX
MIN
MAX
UNITS
I
O
CC
High Level Input
Voltage
V
-
-
-
2
1.5
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
1.5
-
1.5
-
-
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
µA
IH
4.5
3.15
-
-
3.15
-
-
3.15
6
2
4.2
4.2
4.2
-
Low Level Input
Voltage
V
-
-
0.5
1.35
1.8
-
-
0.5
1.35
1.8
-
-
0.5
1.35
1.8
-
IL
4.5
6
-
-
-
-
-
-
High Level Output
Voltage
CMOS Loads
V
V
or
-0.02
2
1.9
1.9
1.9
OH
IH
V
IL
-0.02
-0.02
-
4.5
6
4.4
-
4.4
-
4.4
-
5.9
-
5.9
-
5.9
-
High Level Output
Voltage
TTL Loads
-
-
-
-
-
-
-
-4
4.5
6
3.98
-
3.84
-
3.7
-
-5.2
0.02
0.02
0.02
-
5.48
-
5.34
-
5.2
-
Low Level Output
Voltage
CMOS Loads
V
V
or
2
-
-
-
-
-
-
-
0.1
0.1
0.1
-
-
-
-
-
-
-
-
0.1
0.1
0.1
-
-
-
-
-
-
-
-
0.1
0.1
0.1
-
OL
IH
V
IL
4.5
6
Low Level Output
Voltage
TTL Loads
-
4
4.5
6
0.26
0.26
±0.1
0.33
0.33
±1
0.4
0.4
±1
5.2
-
Input Leakage
Current
I
V
or
6
I
CC
GND
3
CD54HC20, CD74HC20, CD54HCT20, CD74HCT20
DC Electrical Specifications (Continued)
TEST
CONDITIONS
o
o
o
o
o
25 C
-40 C TO 85 C
-55 C TO 125 C
PARAMETER
SYMBOL V (V)
I
(mA)
V
(V) MIN TYP MAX
MIN
MAX
MIN
MAX
UNITS
I
O
CC
Quiescent Device
Current
I
V
GND
or
0
6
-
-
2
-
20
-
40
µA
CC
CC
HCT TYPES
High Level Input
Voltage
V
-
-
-
-
4.5 to
5.5
2
-
-
-
-
-
0.8
-
2
-
-
0.8
-
2
-
-
0.8
-
V
V
V
IH
Low Level Input
Voltage
V
4.5 to
5.5
IL
High Level Output
Voltage
CMOS Loads
V
V
or
IH
-0.02
4.5
4.5
4.5
4.5
5.5
5.5
4.4
4.4
4.4
OH
V
IL
High Level Output
Voltage
TTL Loads
-4
3.98
-
-
-
-
3.84
-
3.7
-
V
V
Low Level Output
Voltage
CMOS Loads
V
V
or
IH
0.02
4
-
-
-
0.1
-
-
-
0.1
0.33
±1
-
-
-
0.1
0.4
±1
OL
V
IL
Low Level Output
Voltage
TTL Loads
0.26
±0.1
V
Input Leakage
Current
I
V
0
µA
I
CC
and
GND
Quiescent Device
Current
I
V
or
0
-
-
-
-
2
-
-
20
-
-
40
µA
µA
CC
CC
GND
Additional Quiescent
Device Current Per
Input Pin: 1 Unit Load
∆I
CC
(Note 2)
V
4.5 to
5.5
100
360
450
490
CC
-2.1
NOTE:
2. For dual-supply systems theoretical worst case (V = 2.4V, V
I
= 5.5V) specification is 1.8mA.
CC
HCT Input Loading Table
INPUT
All
UNIT LOADS
0.15
NOTE: Unit Load is ∆I
Specifications table, e.g. 360µA max at 25 C.
limit specified in DC Electrical
o
CC
Switching Specifications Input t , t = 6ns
r
f
o
o
o
o
o
25 C
-40 C TO 85 C -55 C TO 125 C
TEST
V
CC
PARAMETER
HC TYPES
SYMBOL CONDITIONS (V)
MIN TYP MAX
MIN
MAX
MIN
MAX
UNITS
Propagation Delay, Input to
Output (Figure1)
t
, t
PLH PHL
C = 50pF
2
4.5
6
-
-
-
-
-
-
100
20
17
-
-
-
-
-
125
25
21
-
-
-
-
-
150
30
26
-
ns
ns
ns
ns
L
-
Propagation Delay, Data Input to
Output Y
t , t
PLH PHL
C = 15pF
5
8
L
4
CD54HC20, CD74HC20, CD54HCT20, CD74HCT20
Switching Specifications Input t , t = 6ns (Continued)
r
f
o
o
o
o
o
25 C
-40 C TO 85 C -55 C TO 125 C
TEST
V
CC
PARAMETER
SYMBOL CONDITIONS (V)
MIN TYP MAX
MIN
MAX
95
19
16
10
-
MIN
MAX
110
22
UNITS
ns
Transition Times (Figure1)
t
, t
TLH THL
C = 50pF
L
2
4.5
6
-
-
-
-
-
-
-
75
15
13
10
-
-
-
-
-
-
-
-
-
-
-
ns
-
19
ns
Input Capacitance
C
-
-
-
-
10
pF
I
Power Dissipation Capacitance
(Notes 3, 4)
C
5
26
-
pF
PD
HCT TYPES
Propagation Delay, Input to
Output (Figure 2)
t
, t
PLH PHL
C = 50pF
4.5
5
-
-
-
28
-
-
-
35
-
-
-
42
-
ns
ns
L
Propagation Delay, Data Input to
Output Y
t , t
PLH PHL
C = 15pF
11
L
Transition Times (Figure 2)
Input Capacitance
t
, t
TLH THL
C = 50pF
L
4.5
-
-
-
-
-
-
15
10
-
-
-
-
19
10
-
-
-
-
22
10
-
ns
pF
pF
C
-
-
I
Power Dissipation Capacitance
(Notes 3, 4)
C
5
38
PD
NOTES:
3. C
is used to determine the dynamic power consumption, per gate.
2
PD
4. P = V
f (C
PD
+ C ) where f = input frequency, C = output load capacitance, V = supply voltage.
CC
D
CC
i
L
i
L
Test Circuits and Waveforms
t = 6ns
f
t = 6ns
t = 6ns
t = 6ns
r
r
f
V
3V
CC
90%
50%
10%
2.7V
1.3V
0.3V
INPUT
INPUT
GND
GND
t
t
t
t
THL
TLH
THL
TLH
90%
1.3V
90%
50%
10%
INVERTING
OUTPUT
INVERTING
OUTPUT
10%
t
t
PLH
PHL
t
t
PLH
PHL
FIGURE 1. HC AND HCU TRANSITION TIMES AND PROPAGA-
TION DELAY TIMES, COMBINATION LOGIC
FIGURE 2. HCT TRANSITION TIMES AND PROPAGATION
DELAY TIMES, COMBINATION LOGIC
5
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