CD74HC126M96 [TI]

High-Speed CMOS Logic Quad Buffer, Three-State; 高速CMOS逻辑四路缓冲器,三态
CD74HC126M96
型号: CD74HC126M96
厂家: TEXAS INSTRUMENTS    TEXAS INSTRUMENTS
描述:

High-Speed CMOS Logic Quad Buffer, Three-State
高速CMOS逻辑四路缓冲器,三态

总线驱动器 总线收发器
文件: 总10页 (文件大小:257K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
CD54HC126, CD74HC126,  
CD54HCT126, CD74HCT126  
Data sheet acquired from Harris Semiconductor  
SCHS144C  
High-Speed CMOS Logic  
Quad Buffer, Three-State  
November 1997 - Revised September 2003  
Features  
Description  
• Three-State Outputs  
The ’HC126 and ’HCT126 contain four independent three-  
state buffers, each having its own output enable input, which  
when “low” puts the output in the high-impedance state.  
• Separate Output Enable Inputs  
[ /Title  
(CD74  
HC126  
,
CD74  
HCT12  
6)  
• Fanout (Over Temperature Range)  
- Standard Outputs. . . . . . . . . . . . . . . 10 LSTTL Loads  
- Bus Driver Outputs . . . . . . . . . . . . . 15 LSTTL Loads  
Ordering Information  
TEMP. RANGE  
o
o
o
• Wide Operating Temperature Range . . . -55 C to 125 C  
• Balanced Propagation Delay and Transition Times  
PART NUMBER  
CD54HC126F3A  
CD54HCT126F3A  
CD74HC126E  
( C)  
PACKAGE  
14 Ld CERDIP  
14 Ld CERDIP  
14 Ld PDIP  
14 Ld SOIC  
14 Ld SOIC  
14 Ld SOIC  
14 Ld PDIP  
14 Ld SOIC  
14 Ld SOIC  
14 Ld SOIC  
-55 to 125  
-55 to 125  
-55 to 125  
-55 to 125  
-55 to 125  
-55 to 125  
-55 to 125  
-55 to 125  
-55 to 125  
-55 to 125  
• Significant Power Reduction Compared to LSTTL  
Logic ICs  
/Sub-  
ject  
• HC Types  
(High  
Speed  
CMOS  
Logic  
Quad  
Buffer,  
Three-  
State)  
- 2V to 6V Operation  
CD74HC126M  
- High Noise Immunity: N = 30%, N = 30% of V  
IL IH CC  
CD74HC126MT  
CD74HC126M96  
CD74HCT126E  
CD74HCT126M  
CD74HCT126MT  
CD74HCT126M96  
at V  
= 5V  
CC  
• HCT Types  
- 4.5V to 5.5V Operation  
- Direct LSTTL Input Logic Compatibility,  
V = 0.8V (Max), V = 2V (Min)  
IL IH  
- CMOS Input Compatibility, I 1µA at V , V  
OL OH  
l
NOTE: When ordering, use the entire part number. The suffix 96  
denotes tape and reel. The suffix T denotes a small-quantity reel of  
250.  
Pinout  
CD54HC126, CD54HC126  
(CERDIP)  
CD74HC126, CD74HC126  
(PDIP, SOIC)  
TOP VIEW  
1OE  
1A  
1
2
3
4
5
6
7
14 V  
CC  
13 4OE  
12 4A  
1Y  
2OE  
2A  
11 4Y  
10 3OE  
2Y  
9
8
3A  
3Y  
GND  
CAUTION: These devices are sensitive to electrostatic discharge. Users should follow proper IC Handling Procedures.  
Copyright © 2003, Texas Instruments Incorporated  
1
CD54HC126, CD74HC126, CD54HCT126, CD74HCT126  
Functional Diagram  
1
2
1OE  
1A  
3
1Y  
2Y  
3Y  
4Y  
4
2OE  
2A  
6
5
10  
9
3OE  
3A  
8
13  
12  
4OE  
4A  
11  
GND = 7  
V
= 14  
CC  
TRUTH TABLE  
INPUTS  
OUTPUTS  
nA  
H
nOE  
H
nY  
H
L
L
H
X
L
Z
H= High Voltage Level  
L= Low Voltage Level  
X= Don’t Care  
Z= High Impedance, OFF State  
Logic Diagram  
P
n
nA  
nY  
nOE  
2
CD54HC126, CD74HC126, CD54HCT126, CD74HCT126  
Absolute Maximum Ratings  
Thermal Information  
o
DC Supply Voltage, V  
. . . . . . . . . . . . . . . . . . . . . . . . -0.5V to 7V  
Thermal Resistance (Typical, Note 1)  
θ
( C/W)  
CC  
DC Input Diode Current, I  
For V < -0.5V or V > V  
JA  
IK  
E (PDIP) Package . . . . . . . . . . . . . . . . . . . . . . . . . .  
M (SOIC) Package. . . . . . . . . . . . . . . . . . . . . . . . . .  
80  
86  
+ 0.5V. . . . . . . . . . . . . . . . . . . . . .±20mA  
OK  
For V < -0.5V or V > V  
I
I
CC  
o
DC Output Diode Current, I  
Maximum Junction Temperature . . . . . . . . . . . . . . . . . . . . . . . 150 C  
Maximum Storage Temperature Range . . . . . . . . . .-65 C to 150 C  
Maximum Lead Temperature (Soldering 10s). . . . . . . . . . . . . 300 C  
o
o
+ 0.5V . . . . . . . . . . . . . . . . . . . .±20mA  
O
O
CC  
o
DC Drain Current, per Output, I  
O
For -0.5V < V < V  
+ 0.5V. . . . . . . . . . . . . . . . . . . . . . . . . .±35mA  
O
CC  
(SOIC - Lead Tips Only)  
DC Output Source or Sink Current per Output Pin, I  
O
For V > -0.5V or V < V  
+ 0.5V . . . . . . . . . . . . . . . . . . . .±25mA  
O
O
CC  
DC V  
or Ground Current, I  
. . . . . . . . . . . . . . . . . . . . . . . . .±70mA  
CC  
CC  
Operating Conditions  
o
o
Temperature Range (T ) . . . . . . . . . . . . . . . . . . . . . -55 C to 125 C  
A
Supply Voltage Range, V  
CC  
HC Types . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .2V to 6V  
HCT Types . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .4.5V to 5.5V  
DC Input or Output Voltage, V , V . . . . . . . . . . . . . . . . . 0V to V  
I
O
CC  
Input Rise and Fall Time  
2V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1000ns (Max)  
4.5V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500ns (Max)  
6V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 400ns (Max)  
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation  
of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.  
NOTE:  
1. The package thermal impedance is calculated in accordance with JESD 51-7.  
DC Electrical Specifications  
TEST  
CONDITIONS  
o
o
o
o
o
25 C  
-40 C TO 85 C  
-55 C TO 125 C  
PARAMETER  
HC TYPES  
SYMBOL V (V)  
I
(mA)  
V
(V) MIN TYP MAX  
MIN  
MAX  
MIN  
MAX  
UNITS  
I
O
CC  
High Level Input  
Voltage  
V
-
-
-
2
1.5  
3.15  
4.2  
-
-
-
-
-
-
-
-
-
-
-
-
-
1.5  
3.15  
4.2  
-
-
1.5  
3.15  
4.2  
-
-
V
V
V
V
V
V
V
V
V
V
V
IH  
4.5  
-
-
-
6
2
-
-
-
Low Level Input  
Voltage  
V
-
0.5  
0.5  
0.5  
IL  
4.5  
6
-
1.35  
-
1.35  
-
1.35  
-
1.8  
-
1.8  
-
1.8  
High Level Output  
Voltage  
CMOS Loads  
V
V
or  
-0.02  
2
1.9  
4.4  
5.9  
3.98  
5.48  
-
-
-
-
-
1.9  
4.4  
5.9  
3.84  
5.34  
-
-
-
-
-
1.9  
4.4  
5.9  
3.7  
5.2  
-
-
-
-
-
OH  
IH  
V
IL  
-0.02  
-0.02  
-6  
4.5  
6
High Level Output  
Voltage  
TTL Loads  
4.5  
6
-7.8  
Low Level Output  
Voltage  
CMOS Loads  
V
V
V
or  
0.02  
0.02  
0.02  
6
2
4.5  
6
-
-
-
-
-
-
-
-
-
-
0.1  
0.1  
-
-
-
-
-
0.1  
0.1  
-
-
-
-
-
0.1  
0.1  
0.1  
0.4  
0.4  
V
V
V
V
V
OL  
IH  
IL  
0.1  
0.1  
Low Level Output  
Voltage  
TTL Loads  
4.5  
6
0.26  
0.26  
0.33  
0.33  
7.8  
Input Leakage  
Current  
I
V
or  
-
6
-
-
±0.1  
-
±1  
-
±1  
µA  
I
CC  
GND  
3
CD54HC126, CD74HC126, CD54HCT126, CD74HCT126  
DC Electrical Specifications  
(Continued)  
TEST  
CONDITIONS  
o
o
o
o
o
25 C  
-40 C TO 85 C  
-55 C TO 125 C  
PARAMETER  
SYMBOL V (V)  
I
(mA)  
V
(V) MIN TYP MAX  
MIN  
MAX  
MIN  
MAX  
UNITS  
I
O
CC  
Quiescent Device  
Current  
I
V
or  
0
6
-
-
8
-
80  
-
160  
µA  
CC  
CC  
GND  
Three-State Leakage  
Current  
I
V
V
or  
IL  
-
6
-
-
±0.5  
-
±5  
-
±10  
µA  
OZ  
IH  
HCT TYPES  
High Level Input  
Voltage  
V
-
-
-
-
4.5 to  
5.5  
2
-
-
-
-
-
0.8  
-
2
-
-
0.8  
-
2
-
-
0.8  
-
V
V
V
IH  
Low Level Input  
Voltage  
V
4.5 to  
5.5  
IL  
High Level Output  
Voltage  
CMOS Loads  
V
V
V
or  
-0.02  
4.5  
4.5  
4.5  
4.5  
4.4  
4.4  
4.4  
OH  
IH  
V
IL  
High Level Output  
Voltage  
TTL Loads  
-6  
3.98  
-
-
-
-
3.84  
-
3.7  
-
V
V
V
Low Level Output  
Voltage  
CMOS Loads  
V
or  
0.02  
6
-
-
0.1  
0.26  
-
-
0.1  
0.33  
-
-
0.1  
0.4  
OL  
IH  
V
IL  
Low Level Output  
Voltage  
TTL Loads  
Input Leakage  
Current  
I
V
to  
0
0
-
5.5  
5.5  
-
-
-
-
-
±0.1  
8
-
-
-
±1  
80  
-
-
-
±1  
µA  
µA  
µA  
I
CC  
GND  
Quiescent Device  
Current  
I
V
or  
160  
490  
CC  
CC  
GND  
Additional Quiescent  
Device Current Per  
Input Pin: 1 Unit Load  
I  
CC  
(Note 2)  
V
4.5 to  
5.5  
100  
360  
450  
CC  
-2.1  
Three-State Leakage  
Current  
I
V
V
or  
IL  
-
5.5  
-
-
±0.5  
-
±5  
-
±10  
µA  
OZ  
IH  
NOTE:  
2. For dual-supply systems theoretical worst case (V = 2.4V, V  
I
= 5.5V) specification is 1.8mA.  
CC  
HCT Input Loading Table  
INPUT  
nA, nOE  
UNIT LOADS  
1
NOTE: Unit Load is I  
Specifications table, e.g., 360µA max at 25 C.  
limit specified in DC Electrical  
o
CC  
4
CD54HC126, CD74HC126, CD54HCT126, CD74HCT126  
Switching Specifications Input t , t = 6ns  
r
f
o
o
o
o
o
25 C  
-40 C TO 85 C -55 C TO 125 C  
TEST  
CONDITIONS  
PARAMETER  
HC TYPES  
SYMBOL  
V
(V)  
TYP  
MAX  
MAX  
MAX  
UNITS  
CC  
Propagation Delay Data  
to Outputs  
t
, t  
C = 50pF  
2
-
-
100  
20  
-
125  
25  
-
150  
30  
-
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
pF  
pF  
PLH PHL  
L
4.5  
C = 15pF  
L
5
6
2
8
-
CL = 50pF  
17  
125  
25  
-
21  
155  
31  
-
36  
190  
38  
-
Enable Delay Time  
t
t
C = 50pF  
-
PZL, PZH  
L
4.5  
5
-
C = 15pF  
L
10  
-
CL = 50pF  
CL = 50pF  
6
21  
125  
25  
-
26  
155  
31  
-
32  
190  
38  
-
Disabling Delay Time  
t
, t  
2
-
PLZ PHZ  
C = 50pF  
4.5  
5
-
L
C = 15pF  
L
10  
-
CL = 50pF  
6
21  
60  
12  
10  
10  
20  
26  
75  
15  
13  
10  
20  
32  
90  
18  
15  
10  
20  
Output Transition Times  
Input Capacitance  
t
, t  
TLH THL  
C = 50pF  
L
2
-
4.5  
6
-
-
C
-
-
-
-
I
Three-State Output  
Capacitance  
C
-
-
O
Power Dissipation  
Capacitance  
C
-
5
30  
-
-
-
pF  
PD  
(Notes 3, 4)  
HCT TYPES  
Propagation Delay Time  
to Outputs  
t
, t  
C = 50pF  
4.5  
5
-
9
-
24  
-
30  
-
36  
-
ns  
ns  
ns  
ns  
ns  
ns  
ns  
pF  
pF  
PLH PHL  
L
C = 15pF  
L
Output Enable Time  
t
t
C = 50pF  
4.5  
5
25  
-
31  
-
38  
-
PZL, PZH  
L
C = 15pF  
10  
-
L
Output Disabling Time  
t
, t  
PLZ PHZ  
C = 50pF  
4.5  
5
28  
-
35  
-
42  
-
L
C = 15pF  
11  
-
L
Output Transition Times  
Input Capacitance  
t
, t  
TLH THL  
C = 50pF  
L
4.5  
-
12  
10  
20  
15  
10  
20  
18  
10  
20  
C
-
-
-
I
Three-State Output  
Capacitance  
C
-
-
O
Power Dissipation  
Capacitance  
C
-
5
36  
-
-
-
pF  
PD  
(Notes 3, 4)  
NOTES:  
3. C  
is used to determine the dynamic power consumption, per multiplexer.  
2
PD  
4. P = V  
f (C  
PD  
+ C ) where f = Input Frequency, C = Output Load Capacitance, V = Supply Voltage.  
CC  
D
CC  
i
L
i
L
5
CD54HC126, CD74HC126, CD54HCT126, CD74HCT126  
Test Circuits and Waveforms  
t = 6ns  
t = 6ns  
t = 6ns  
t = 6ns  
r
f
r
f
V
3V  
CC  
90%  
50%  
10%  
2.7V  
1.3V  
0.3V  
INPUT  
INPUT  
GND  
GND  
t
t
t
t
THL  
TLH  
THL  
TLH  
90%  
1.3V  
90%  
50%  
10%  
INVERTING  
OUTPUT  
INVERTING  
OUTPUT  
10%  
t
t
PLH  
PHL  
t
t
PLH  
PHL  
FIGURE 6. HC TRANSITION TIMES AND PROPAGATION  
DELAY TIMES, COMBINATION LOGIC  
FIGURE 7. HCT TRANSITION TIMES AND PROPAGATION  
DELAY TIMES, COMBINATION LOGIC  
6ns  
6ns  
t
6ns  
t
6ns  
r
f
V
3V  
CC  
OUTPUT  
DISABLE  
OUTPUT  
DISABLE  
90%  
2.7  
50%  
t
1.3  
10%  
0.3  
GND  
GND  
t
t
t
t
PZL  
PZL  
PLZ  
PLZ  
OUTPUT LOW  
TO OFF  
OUTPUT LOW  
TO OFF  
50%  
50%  
1.3V  
10%  
90%  
10%  
90%  
t
t
PZH  
PHZ  
PHZ  
t
PZH  
OUTPUT HIGH  
TO OFF  
OUTPUT HIGH  
TO OFF  
1.3V  
OUTPUTS  
ENABLED  
OUTPUTS  
ENABLED  
OUTPUTS  
DISABLED  
OUTPUTS  
ENABLED  
OUTPUTS  
DISABLED  
OUTPUTS  
ENABLED  
FIGURE 8. HC THREE-STATE PROPAGATION DELAY  
WAVEFORM  
FIGURE 9. HCT THREE-STATE PROPAGATION DELAY  
WAVEFORM  
OTHER  
OUTPUT  
= 1kΩ  
INPUTS  
TIED HIGH  
OR LOW  
IC WITH  
THREE-  
STATE  
R
L
V
FOR t AND t  
PLZ  
CC  
GND FOR t  
PZL  
AND t  
PHZ  
PZH  
C
L
OUTPUT  
50pF  
OUTPUT  
DISABLE  
NOTE: Open drain waveforms t  
and t are the same as those for three-state shown on the left. The test circuit is Output R = 1kto  
PZL L  
PLZ  
V
, C = 50pF.  
CC  
L
FIGURE 10. HC AND HCT THREE-STATE PROPAGATION DELAY TEST CIRCUIT  
6
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High-Speed CMOS Logic Quad Buffer, Three-State
TI

CD74HC126MT

High-Speed CMOS Logic Quad Buffer, Three-State
TI

CD74HC126MTE4

High-Speed CMOS Logic Quad Buffer, Three-State
TI

CD74HC126MTG4

High-Speed CMOS Logic Quad Buffer, Three-State
TI

CD74HC132

High Speed CMOS Logic Quad 2-Input NAND Schmitt Trigger
TI

CD74HC132E

High-Speed CMOS Logic Quad 2-Input NAND Schmitt Trigger
TI

CD74HC132EE4

High-Speed CMOS Logic Quad 2-Input NAND Schmitt Trigger
TI

CD74HC132EN

Optoelectronic
ETC

CD74HC132EX

IC,LOGIC GATE,QUAD 2-INPUT NAND,HC-CMOS,DIP,14PIN,PLASTIC
RENESAS