CD74HCT14 [TI]

High Speed CMOS Logic Hex Inverting Schmitt Trigger; 高速CMOS逻辑六角反相施密特触发器
CD74HCT14
型号: CD74HCT14
厂家: TEXAS INSTRUMENTS    TEXAS INSTRUMENTS
描述:

High Speed CMOS Logic Hex Inverting Schmitt Trigger
高速CMOS逻辑六角反相施密特触发器

触发器
文件: 总7页 (文件大小:40K)
中文:  中文翻译
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CD74HC14,  
CD74HCT14  
Data sheet acquired from Harris Semiconductor  
SCHS129  
High Speed CMOS Logic  
Hex Inverting Schmitt Trigger  
January 1998  
at V  
= 5V  
Features  
CC  
• HCT Types  
• Unlimited Input Rise and Fall Times  
• Exceptionally High Noise Immunity  
- 4.5V to 5.5V Operation  
[ /Title  
(CD74H  
C14,  
CD74H  
CT14)  
/Subject  
(High  
Speed  
CMOS  
Logic  
- Direct LSTTL Input Logic Compatibility,  
• Fanout (Over Temperature Range)  
V = 0.8V (Max), V = 2V (Min)  
IL IH  
- Standard Outputs. . . . . . . . . . . . . . . 10 LSTTL Loads  
- Bus Driver Outputs . . . . . . . . . . . . . 15 LSTTL Loads  
- CMOS Input Compatibility, I 1µA at V , V  
OL OH  
l
Description  
o
o
• Wide Operating Temperature Range . . . -55 C to 125 C  
• Balanced Propagation Delay and Transition Times  
The Harris CD74HC14, CD74HCT14 each contain 6  
inverting Schmitt Triggers in one package.  
• Significant Power Reduction Compared to LSTTL  
Logic ICs  
Ordering Information  
• HC Types  
TEMP. RANGE  
PKG.  
NO.  
o
PART NUMBER  
( C)  
PACKAGE  
- 2V to 6V Operation  
Hex  
Invert-  
- High Noise Immunity: N = 30%, N = 30% of V  
IL IH CC  
CD54HCT14F  
-55 to 125  
14 Ld CERDIP F14.3  
Pinout  
CD54HC14, CD54HCT14, CD74HC14, CD74HCT14  
(PDIP, CERDIP, SOIC)  
TOP VIEW  
1A  
1Y  
1
2
3
4
5
6
7
14 V  
CC  
13 6A  
12 6Y  
11 5A  
10 5Y  
2A  
2Y  
3A  
3Y  
9
8
4A  
4Y  
GND  
CAUTION: These devices are sensitive to electrostatic discharge. Users should follow proper IC Handling Procedures.  
File Number 1781.1  
Copyright © Harris Corporation 1998  
1
CD74HC14, CD74HCT14  
Functional Diagram  
2
1
1A  
1Y  
2Y  
3Y  
4Y  
5Y  
6Y  
4
3
2A  
6
5
3A  
8
9
4A  
11  
10  
12  
5A  
13  
6A  
GND = 7  
V
= 14  
CC  
TRUTH TABLE  
INPUT (A)  
OUTPUT (Y)  
L
H
L
H
NOTE:  
H= High Level  
L = Low Level  
Logic Diagram  
nA  
nY  
2
CD74HC14, CD74HCT14  
V
H
V
O
V
= V + - V -  
T T  
H
V
I
V - V +  
T
T
V +  
V -  
T
T
V
CC  
V
V
H
I
GND  
V
CC  
V
O
GND  
FIGURE 3. HYSTERESIS DEFINITION, CHARACTERISTIC, AND TEST SETUP  
3
CD74HC14, CD74HCT14  
Absolute Maximum Ratings  
Thermal Information  
o
o
DC Supply Voltage, V  
. . . . . . . . . . . . . . . . . . . . . . . . -0.5V to 7V  
Thermal Resistance (Typical, Note 3)  
PDIP Package . . . . . . . . . . . . . . . . . . .  
CERDIP Package . . . . . . . . . . . . . . . .  
SOIC Package. . . . . . . . . . . . . . . . . . .  
θ
( C/W)  
θ
( C/W)  
CC  
DC Input Diode Current, I  
For V < -0.5V or V > V  
JA  
JC  
90  
130  
120  
-
55  
-
IK  
+ 0.5V. . . . . . . . . . . . . . . . . . . . . .±20mA  
OK  
For V < -0.5V or V > V  
I
I
CC  
DC Output Diode Current, I  
o
+ 0.5V . . . . . . . . . . . . . . . . . . . .±20mA  
Maximum Junction Temperature (Hermetic Package or Die) . . . 175 C  
Maximum Junction Temperature (Plastic Package) . . . . . . . . 150 C  
Maximum Storage Temperature Range . . . . . . . . . .-65 C to 150 C  
Maximum Lead Temperature (Soldering 10s). . . . . . . . . . . . . 300 C  
O
O
CC  
o
DC Drain Current, per Output, I  
O
o
o
For -0.5V < V < V  
+0.5V . . . . . . . . . . . . . . . . . . . . . . . . . .±25mA  
O
CC  
o
DC Output Source or Sink Current per Output Pin, I  
O
For V > -0.5V or V < V  
+ 0.5V . . . . . . . . . . . . . . . . . . . .±25mA  
(SOIC - Lead Tips Only)  
O
O
CC  
DC V  
or Ground Current, I  
. . . . . . . . . . . . . . . . . . . . . . . . .±50mA  
CC  
CC  
Operating Conditions  
o
o
Temperature Range, T . . . . . . . . . . . . . . . . . . . . . . -55 C to 125 C  
A
Supply Voltage Range, V  
CC  
HC Types . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .2V to 6V  
HCT Types . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .4.5V to 5.5V  
DC Input or Output Voltage, V , V . . . . . . . . . . . . . . . . . 0V to V  
I
O
CC  
Input Rise and Fall Time, t , t  
r
f
2V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100ms (Max)  
4.5V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100ms (Max)  
6V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100ms (Max)  
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation  
of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.  
NOTE:  
3. θ is measured with the component mounted on an evaluation PC board in free air.  
JA  
DC Electrical Specifications  
TEST  
CONDITIONS  
o
25 C  
o
o
o
o
-40 C TO 85 C  
-55 C TO 125 C  
PARAMETER  
HC TYPES  
SYMBOL V (V)  
I
(mA)  
V
(V)  
MIN  
MAX  
MIN  
MAX  
MIN  
MAX  
UNITS  
I
O
CC  
Input Switch Points  
V +  
-
-
-
-
2
0.7  
1.7  
2.1  
0.3  
0.9  
1.2  
0.2  
0.4  
0.6  
1.9  
4.4  
5.9  
-
1.5  
3.15  
4.2  
1.0  
2.2  
3.0  
1.0  
1.4  
1.6  
-
0.7  
1.7  
2.1  
0.3  
0.9  
1.2  
0.2  
0.4  
0.6  
1.9  
4.4  
5.9  
-
1.5  
3.15  
4.2  
1.0  
2.2  
3.0  
1.0  
1.4  
1.6  
-
0.7  
1.7  
2.1  
0.3  
0.9  
1.2  
0.2  
0.4  
0.6  
1.9  
4.4  
5.9  
-
1.5  
3.15  
4.2  
1.0  
2.2  
3.0  
1.0  
1.4  
1.6  
-
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
T
4.5  
6
2
V -  
-
-
T
4.5  
6
V
2
H
4.5  
6
High Level Output  
Voltage CMOS Loads  
V
V - or  
-0.02  
2
OH  
T
V +  
T
-0.02  
-0.02  
-
4.5  
6
-
-
-
-
-
-
High Level Output  
Voltage TTL Loads  
-
-
-
-
-4  
4.5  
6
3.98  
5.48  
-
3.84  
5.34  
-
3.7  
5.2  
-
-5.2  
-
-
-
4
CD74HC14, CD74HCT14  
DC Electrical Specifications (Continued)  
TEST  
o
o
o
o
o
CONDITIONS  
25 C  
-40 C TO 85 C  
-55 C TO 125 C  
PARAMETER  
SYMBOL V (V) (mA)  
I
V
(V)  
MIN  
MAX  
0.1  
MIN  
MAX  
0.1  
0.1  
0.1  
-
MIN  
MAX  
0.1  
0.1  
0.1  
-
UNITS  
I
O
CC  
LowLevelOutputVoltage  
CMOS Loads  
V
V
V
or  
IH  
0.02  
0.02  
0.02  
-
2
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
V
V
OL  
IL  
4.5  
0.1  
6
-
0.1  
V
Low Level Output Voltage  
TTL Loads  
-
V
4
4.5  
6
0.26  
0.26  
±0.1  
0.33  
0.33  
±1  
0.4  
0.4  
±1  
V
5.2  
-
V
Input Leakage Current  
I
V
or  
6
µA  
I
CC  
GND  
Quiescent Device  
Current  
I
V
GND  
or  
0
-
6
-
2
-
20  
-
40  
µA  
CC  
CC  
HCT TYPES  
Input Switch Points  
V +  
-
4.5  
5.5  
4.5  
5.5  
4.5  
5.5  
4.5  
1.2  
1.4  
0.5  
0.6  
0.4  
0.4  
4.4  
1.9  
2.1  
1.2  
1.4  
1.4  
1.5  
-
1.2  
1.4  
0.5  
0.6  
0.4  
0.4  
4.4  
1.9  
2.1  
1.2  
1.4  
1.4  
1.5  
-
1.2  
1.4  
0.5  
0.6  
0.4  
0.4  
4.4  
1.9  
2.1  
1.2  
1.4  
1.4  
1.5  
-
V
V
V
V
V
V
V
T
V -  
T
V
H
High Level Output  
Voltage CMOS Loads  
V
V
or  
IH  
-0.02  
-4  
OH  
V
IL  
High Level Output  
Voltage TTL Loads  
4.5  
4.5  
4.5  
5.5  
3.98  
-
3.84  
-
3.7  
-
V
V
LowLevelOutputVoltage  
CMOS Loads  
V
V
or  
IH  
0.02  
4
-
-
-
0.1  
-
-
-
0.1  
0.33  
±1  
-
-
-
0.1  
0.4  
±1  
OL  
V
IL  
Low Level Output Voltage  
TTL Loads  
0.26  
±0.1  
V
Input Leakage Current  
I
V
-
µA  
I
CC  
and  
GND  
Quiescent Device  
Current  
I
V
GND  
or  
0
-
5.5  
-
-
2
-
-
20  
-
-
40  
µA  
µA  
CC  
CC  
Additional Quiescent  
Device Current Per Input (Note 4)  
I  
CC  
V
4.5 to  
5.5  
360  
450  
490  
CC  
- 2.1  
Pin: 1 Unit Load  
NOTE:  
4. For dual-supply systems theoretical worst case (V = 2.4V, V  
I
= 5.5V) specification is 1.8mA.  
CC  
HCT Input Loading Table  
INPUT  
nA  
UNIT LOADS  
0.6  
NOTE: Unit Load is I  
tions table, e.g., 360µA max at 25 C.  
limit specified in DC Electrical Specifica-  
CC  
o
5
Switching Specifications Input t , t = 6ns  
r
f
o
o
o
o
o
25 C  
-40 C TO 85 C -55 C TO 125 C  
TEST  
V
CC  
PARAMETER  
HC TYPES  
SYMBOL CONDITIONS (V)  
MIN TYP MAX  
MIN  
MAX  
MIN  
MAX  
UNITS  
Propagation Delay,  
A to Y  
t
, t  
C = 50pF  
2
4.5  
5
-
-
-
-
-
-
-
-
-
-
-
135  
27  
-
-
-
-
-
-
-
-
-
-
170  
34  
-
-
-
205  
41  
-
ns  
ns  
ns  
ns  
ns  
ns  
ns  
pF  
pF  
PLH PHL  
L
C = 50pF  
L
C = 15pF  
11  
-
-
L
C = 50pF  
6
23  
75  
15  
13  
10  
-
29  
95  
19  
16  
10  
-
-
35  
110  
22  
19  
10  
-
L
Output Transition Times  
Input Capacitance  
t
, t  
TLH THL  
C = 50pF  
L
2
-
18  
-
4.5  
6
-
-
-
C
-
-
-
-
-
I
Power Dissipation Capacitance  
(Notes 5, 6)  
C
5
20  
-
PD  
HCT TYPES  
Propagation Delay,  
A to Y  
t
, t  
C = 50pF  
4.5  
5
-
-
-
-
-
-
16  
-
38  
-
-
-
-
-
-
48  
-
-
-
-
-
-
57  
-
ns  
ns  
ns  
pF  
pF  
PLH PHL  
L
C = 15pF  
L
Output Transition Times  
Input Capacitance  
t
, t  
TLH THL  
C = 50pF  
L
4.5  
-
15  
10  
-
19  
10  
-
22  
10  
-
C
-
-
-
I
Power Dissipation Capacitance  
(Notes 5, 6)  
C
5
20  
PD  
NOTES:  
5. C  
is used to determine the dynamic power consumption, per inverter.  
2
PD  
6. P = V  
f (C  
PD  
+ C ) where f = input frequency, C = output load capacitance, V = supply voltage.  
CC  
D
CC  
i
L
i
L
Test Circuits and Waveforms  
t = 6ns  
f
t = 6ns  
t = 6ns  
t = 6ns  
r
r
f
V
3V  
CC  
90%  
50%  
10%  
2.7V  
1.3V  
0.3V  
INPUT  
INPUT  
GND  
GND  
t
t
t
t
THL  
TLH  
THL  
TLH  
90%  
1.3V  
90%  
50%  
10%  
INVERTING  
OUTPUT  
INVERTING  
OUTPUT  
10%  
t
t
PLH  
PHL  
t
t
PLH  
PHL  
FIGURE 4. HC TRANSITION TIMES AND PROPAGATION  
DELAY TIMES, COMBINATION LOGIC  
FIGURE 5. HCT TRANSITION TIMES AND PROPAGATION  
DELAY TIMES, COMBINATION LOGIC  
6
IMPORTANT NOTICE  
Texas Instruments and its subsidiaries (TI) reserve the right to make changes to their products or to discontinue  
any product or service without notice, and advise customers to obtain the latest version of relevant information  
to verify, before placing orders, that information being relied on is current and complete. All products are sold  
subject to the terms and conditions of sale supplied at the time of order acknowledgement, including those  
pertaining to warranty, patent infringement, and limitation of liability.  
TI warrants performance of its semiconductor products to the specifications applicable at the time of sale in  
accordance with TI’s standard warranty. Testing and other quality control techniques are utilized to the extent  
TI deems necessary to support this warranty. Specific testing of all parameters of each device is not necessarily  
performed, except those mandated by government requirements.  
CERTAIN APPLICATIONS USING SEMICONDUCTOR PRODUCTS MAY INVOLVE POTENTIAL RISKS OF  
DEATH, PERSONAL INJURY, OR SEVERE PROPERTY OR ENVIRONMENTAL DAMAGE (“CRITICAL  
APPLICATIONS”). TI SEMICONDUCTOR PRODUCTS ARE NOT DESIGNED, AUTHORIZED, OR  
WARRANTED TO BE SUITABLE FOR USE IN LIFE-SUPPORT DEVICES OR SYSTEMS OR OTHER  
CRITICAL APPLICATIONS. INCLUSION OF TI PRODUCTS IN SUCH APPLICATIONS IS UNDERSTOOD TO  
BE FULLY AT THE CUSTOMER’S RISK.  
In order to minimize risks associated with the customer’s applications, adequate design and operating  
safeguards must be provided by the customer to minimize inherent or procedural hazards.  
TI assumes no liability for applications assistance or customer product design. TI does not warrant or represent  
that any license, either express or implied, is granted under any patent right, copyright, mask work right, or other  
intellectual property right of TI covering or relating to any combination, machine, or process in which such  
semiconductor products or services might be or are used. TI’s publication of information regarding any third  
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Copyright 1998, Texas Instruments Incorporated  

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