CD74HCT40105M96 [TI]

High-Speed CMOS Logic 4-Bit x 16-Word FIFO Register; 高速CMOS逻辑4位x 16字FIFO寄存器
CD74HCT40105M96
型号: CD74HCT40105M96
厂家: TEXAS INSTRUMENTS    TEXAS INSTRUMENTS
描述:

High-Speed CMOS Logic 4-Bit x 16-Word FIFO Register
高速CMOS逻辑4位x 16字FIFO寄存器

存储 内存集成电路 光电二极管 先进先出芯片 时钟
文件: 总19页 (文件大小:317K)
中文:  中文翻译
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CD54HC40105, CD74HC40105,  
CD54HCT40105, CD74HCT40105  
Data sheet acquired from Harris Semiconductor  
SCHS222C  
High-Speed CMOS Logic  
4-Bit x 16-Word FIFO Register  
February 1998 - Revised October 2003  
Features  
Description  
• Independent Asynchronous Inputs and Outputs  
• Expandable in Either Direction  
• Reset Capability  
The ’HC40105 and ’HCT40105 are high-speed silicon-gate  
CMOS devices that are compatible, except for “shift-out”  
circuitry, with the CD40105B. They are low-power first-in-out  
(FIFO) “elastic” storage registers that can store 16 four-bit  
words. The 40105 is capable of handling input and output  
data at different shifting rates. This feature makes it  
particularly useful as a buffer between asynchronous  
systems.  
[ /Title  
(CD74  
HC401  
05,  
CD74  
HCT40  
105)  
/Sub-  
ject  
(High  
Speed  
CMOS  
• Status Indicators on Inputs and Outputs  
• Three-State Outputs  
• Shift-Out Independent of Three-State Control  
• Fanout (Over Temperature Range)  
Each work position in the register is clocked by a control flip-  
flop, which stores a marker bit. A “1” signifies that the posi-  
tion’s data is filled and a “0” denotes a vacancy in that posi-  
tion. The control flip-flop detects the state of the preceding  
- Standard Outputs. . . . . . . . . . . . . . . 10 LSTTL Loads  
- Bus Driver Outputs . . . . . . . . . . . . . 15 LSTTL Loads  
o
flip-flop and communicates its own status to the succeeding  
o
• Wide Operating Temperature Range . . . -55 C to 125 C flip-flop. When a control flip-flop is in the “0” state and sees a  
“1” in the preceeding flip-flop, it generates a clock pulse that  
transfers data from the preceding four data latches into its  
• Balanced Propagation Delay and Transition Times  
own four data latches and resets the preceding flip-flop to  
“0”. The first and last control flip-flops have buffered outputs.  
Since all empty locations “bubble” automatically to the input  
end, and all valid data ripple through to the output end, the  
status of the first control flip-flop (DATA-IN READY) indicates  
if the FIFO is full, and the status of the last flip-flop (DATA-  
OUT READY) indicates if the FIFO contains data. As the  
earliest data are removed from the bottom of the data stack  
(the output end), all data entered later will automatically  
propagate (ripple) toward the output.  
• Significant Power Reduction Compared to LSTTL  
Logic ICs  
• HC Types  
- 2V to 6V Operation  
- High Noise Immunity: N = 30%, N = 30% of V  
IL IH CC  
at V  
= 5V  
CC  
• HCT Types  
- 4.5V to 5.5V Operation  
- Direct LSTTL Input Logic Compatibility,  
V = 0.8V (Max), V = 2V (Min)  
Ordering Information  
IL  
IH  
- CMOS Input Compatibility, I 1µA at V , V  
OL OH  
l
o
PART NUMBER  
CD54HC40105F3A  
CD54HCT40105F3A  
CD74HC40105E  
TEMP. RANGE ( C)  
-55 to 125  
-55 to 125  
-55 to 125  
-55 to 125  
-55 to 125  
-55 to 125  
-55 to 125  
-55 to 125  
-55 to 125  
-55 to 125  
PACKAGE  
16 Ld CERDIP  
16 Ld CERDIP  
16 Ld PDIP  
16 Ld SOIC  
16 Ld SOIC  
16 Ld SOIC  
16 Ld PDIP  
16 Ld SOIC  
16 Ld SOIC  
16 Ld SOIC  
Applications  
• Bit-Rate Smoothing  
• CPU/Terminal Buffering  
• Data Communications  
• Peripheral Buffering  
• Line Printer Input Buffers  
• Auto-Dialers  
CD74HC40105M  
CD74HC40105MT  
CD74HC40105M96  
CD74HCT40105E  
CD74HCT40105M  
CD74HCT40105MT  
CD74HCT40105M96  
• CRT Buffer Memories  
• Radar Data Acquisition  
NOTE: When ordering, use the entire part number. The suffix 96  
denotes tape and reel. The suffix T denotes a small-quantity reel  
of 250.  
CAUTION: These devices are sensitive to electrostatic discharge. Users should follow proper IC Handling Procedures.  
Copyright © 2003, Texas Instruments Incorporated  
1
CD54HC40105, CD74HC40105, CD54HCT40105, CD74HCT40105  
Three-State Outputs  
Pinout  
In order to facilitate data busing, three-state outputs (Q0 to  
CD54HC40105, CD54HCT40105  
(CERDIP)  
CD74HC40105, CD74HCT40105  
(PDIP, SOIC)  
Q3) are provided on the data output lines, while the load  
condition of the register can be detected by the state of the  
DOR output. A HIGH on the three-state control flag (output  
enable input OE) forces the outputs into the high-impedance  
OFF-state mode. Note that the shift-out signal, unlike that in  
the CD40105B, is independent of the three-state output  
control. In the CD40105B, the three-state control must not  
be shifted from High to Low when the shift-out signal is Low  
(data loss would occur). In the high-speed CMOS version  
this restriction has been eliminated.  
TOP VIEW  
THREE-STATE  
1
2
3
4
5
6
7
8
16 V  
CC  
CONTROL  
DIR  
15 SO  
14 DOR  
13 Q0  
12 Q1  
11 Q2  
10 Q3  
SI  
D0  
D1  
Cascading  
D2  
The 40105 can be cascaded to form longer registers simply  
by connecting the DIR to SO and DOR to SI. In the cascaded  
mode, a MASTER RESET pulse must be applied after the  
supply voltage is turned on. For words wider than four bits, the  
DIR and the DOR outputs must be gated together with AND  
gates. Their outputs drive the SI and SO inputs in parallel, if  
expanding is done in both directions (see Figures 12 and 13).  
D3  
9
MR  
GND  
Loading Data  
Data can be entered whenever the DATA-IN READY (DIR)  
flag is high, by a low to high transition on the SHIFT-IN (SI)  
input. This input must go low momentarily before the next  
word is accepted by the FIFO. The DIR flag will go low  
momentarily, until the data have been transferred to the sec-  
ond location. The flag will remain low when all 16-word loca-  
tions are filled with valid data, and further pulses on the SI  
input will be ignored until DIR goes high.  
Functional Diagram  
THREE-  
STATE  
CONTROL  
1
13  
4
Q0  
D0  
12  
5
Q1  
D1  
11  
Unloading Data  
6
7
Q2  
D2  
10  
As soon as the first word has rippled to the output, the data-  
out ready output (DOR) goes HIGH and data of the first word  
is available on the outputs. Data of other words can be  
removed by a negative-going transition on the shift-out input  
(SO). This negative-going transition causes the DOR signal  
to go LOW while the next word moves to the output. As long  
as valid data is available in the FIFO, the DOR signal will go  
high again, signifying that the next word is ready at the  
output. When the FIFO is empty, DOR will remain LOW, and  
any further commands will be ignored until a “1” marker  
ripples down to the last control register and DOR goes  
HIGH. If during unloading SI is HIGH, (FIFO is full) data on  
the data input of the FIFO is entered in the first location.  
Q3  
D3  
3
14  
2
DATA-OUT  
READY  
DATA-IN  
READY  
SHIFT IN  
15  
SHIFT OUT  
GND = 8  
= 16  
9
MASTER  
RESET  
V
CC  
Master Reset  
A high on the MASTER RESET (MR) sets all the control  
logic marker bits to “0”. DOR goes low and DIR goes high.  
The contents of the data register are not changed, only  
declared invalid, and will be superseded when the first word  
is loaded. Thus, MR does not clear data within the register  
but only the control logic. If the shift-in flag (SI) is HIGH  
during the master reset pulse, data present at the input (D0  
to D3) are immediately moved into the first location upon  
completion of the reset process.  
2
CD54HC40105, CD74HC40105, CD54HCT40105, CD74HCT40105  
INPUT  
BUFFERS  
OUTPUT  
BUFFERS  
D0  
D1  
D2  
D3  
4
5
6
7
13 Q0  
12 Q1  
11 Q2  
10 Q3  
4 x 16  
DATA  
REGISTER  
1
THREE-STATE CONTROL  
DATA-OUT READY (DOR)  
DATA-IN READY (DIR)  
2
CONTROL LOGIC  
14  
SHIFT OUT (SO)  
15  
3
9
SHIFT IN (SI)  
MASTER  
RESET  
(MR)  
FIGURE 1. FUNCTIONAL BLOCK DIAGRAM  
3
CD54HC40105, CD74HC40105, CD54HCT40105, CD74HCT40105  
9
3
MR  
SI  
14  
DOR  
15  
S0  
F/Fs  
2-15  
F/F16  
F/F1  
R
S
Q
Q
R
Q
R
Q
Q
R
Q
† †  
† †  
S
† †  
S
Q
S
Q
R
S
14 x  
Q
2
DIR  
14 x  
4
5
13  
Q0  
Q1  
Q2  
Q3  
D0  
D1  
D2  
D3  
CL  
CL  
CL  
CL  
CL  
CL  
12  
11  
10  
THREE-  
STATE  
OUTPUT  
BUFFERS  
4
4 x 14  
LATCHES  
4
LATCHES  
LATCHES  
6
7
L1  
14 x L1  
L16  
E
E
POSITION 1  
POSITION 2-15  
POSITIONS 16  
1
OE  
“S” overrides “R”.  
†† “R” overrides “S”.  
FIGURE 2. LOGIC DIAGRAM  
4
CD54HC40105, CD74HC40105, CD54HCT40105, CD74HCT40105  
Absolute Maximum Ratings  
Thermal Information  
o
DC Supply Voltage, V  
. . . . . . . . . . . . . . . . . . . . . . . . -0.5V to 7V  
Thermal Resistance (Typical, Note 1)  
θ
( C/W)  
CC  
DC Input Diode Current, I  
For V < -0.5V or V > V  
JA  
IK  
E (PDIP) Package . . . . . . . . . . . . . . . . . . . . . . . . . .  
M (SOIC) Package. . . . . . . . . . . . . . . . . . . . . . . . . .  
67  
73  
+ 0.5V. . . . . . . . . . . . . . . . . . . . . .±20mA  
OK  
For V < -0.5V or V > V  
I
I
CC  
o
DC Output Diode Current, I  
Maximum Junction Temperature . . . . . . . . . . . . . . . . . . . . . . . 150 C  
Maximum Storage Temperature Range . . . . . . . . . .-65 C to 150 C  
Maximum Lead Temperature (Soldering 10s). . . . . . . . . . . . . 300 C  
o
o
+ 0.5V . . . . . . . . . . . . . . . . . . . .±20mA  
O
O
CC  
o
DC Output Source or Sink Current per Output Pin, I  
O
For V > -0.5V or V < V  
+ 0.5V . . . . . . . . . . . . . . . . . . . .±25mA  
O
O
CC  
(SOIC - Lead Tips Only)  
DC V  
or Ground Current, I  
. . . . . . . . . . . . . . . . . . . . . . . . .±50mA  
CC  
CC  
Operating Conditions  
o
o
Temperature Range (T ) . . . . . . . . . . . . . . . . . . . . . -55 C to 125 C  
A
Supply Voltage Range, V  
CC  
HC Types . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .2V to 6V  
HCT Types . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .4.5V to 5.5V  
DC Input or Output Voltage, V , V . . . . . . . . . . . . . . . . . 0V to V  
I
O
CC  
Input Rise and Fall Time  
2V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1000ns (Max)  
4.5V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500ns (Max)  
6V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 400ns (Max)  
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation  
of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.  
NOTE:  
1. The package thermal impedance is calculated in accordance with JESD 51-7.  
DC Electrical Specifications  
TEST  
CONDITIONS  
o
o
o
o
o
25 C  
-40 C TO 85 C -55 C TO 125 C  
V
CC  
PARAMETER  
HC TYPES  
SYMBOL  
V (V)  
I
I
(mA)  
(V)  
MIN  
TYP  
MAX  
MIN  
MAX  
MIN  
MAX  
UNITS  
O
High Level Input  
Voltage  
V
-
-
-
2
4.5  
6
1.5  
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
1.5  
-
1.5  
-
-
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
µA  
IH  
3.15  
-
-
3.15  
-
-
3.15  
4.2  
4.2  
4.2  
-
Low Level Input  
Voltage  
V
-
2
-
0.5  
1.35  
1.8  
-
-
0.5  
1.35  
1.8  
-
-
0.5  
1.35  
1.8  
-
IL  
4.5  
6
-
-
-
-
-
-
High Level Output  
Voltage  
CMOS Loads  
V
V
or V  
IH IL  
-0.02  
2
1.9  
1.9  
1.9  
OH  
-0.02  
-0.02  
-
4.5  
6
4.4  
-
4.4  
-
4.4  
-
5.9  
-
5.9  
-
5.9  
-
High Level Output  
Voltage  
TTL Loads  
-
-
-
-
-
-
-
-4  
4.5  
6
3.98  
-
3.84  
-
3.7  
-
-5.2  
0.02  
0.02  
0.02  
-
5.48  
-
5.34  
-
5.2  
-
Low Level Output  
Voltage  
CMOS Loads  
V
V
or V  
IH IL  
2
-
-
-
-
-
-
-
0.1  
0.1  
0.1  
-
-
-
-
-
-
-
-
0.1  
0.1  
0.1  
-
-
-
-
-
-
-
-
0.1  
0.1  
0.1  
-
OL  
4.5  
6
Low Level Output  
Voltage  
TTL Loads  
-
4
4.5  
6
0.26  
0.26  
±0.1  
0.33  
0.33  
±1  
0.4  
0.4  
±1  
5.2  
-
Input Leakage  
Current  
I
V
or  
6
I
CC  
GND  
Quiescent Device  
Current  
I
V
GND  
or  
0
6
-
-
8
-
80  
-
160  
µA  
CC  
CC  
5
CD54HC40105, CD74HC40105, CD54HCT40105, CD74HCT40105  
DC Electrical Specifications (Continued)  
TEST  
CONDITIONS  
o
o
o
o
o
25 C  
-40 C TO 85 C -55 C TO 125 C  
V
CC  
PARAMETER  
SYMBOL  
V (V)  
I
(mA)  
O
(V)  
MIN  
TYP  
MAX  
MIN  
MAX  
MIN  
MAX  
UNITS  
I
Three-State Leakage  
Current  
I
V
or V  
V
=
or  
6
-
-
±0.5  
-
±5  
-
±10  
µA  
OZ  
IL  
IH  
O
V
CC  
GND  
HCT TYPES  
High Level Input  
Voltage  
V
-
-
-
-
4.5 to  
5.5  
2
-
-
-
-
-
0.8  
-
2
-
-
0.8  
-
2
-
-
0.8  
-
V
V
V
IH  
Low Level Input  
Voltage  
V
4.5 to  
5.5  
IL  
High Level Output  
Voltage  
CMOS Loads  
V
V
V
or V  
-0.02  
4.5  
4.5  
4.5  
4.5  
4.4  
4.4  
4.4  
OH  
IH  
IH  
IL  
High Level Output  
Voltage  
TTL Loads  
-4  
0.02  
4
3.98  
-
-
-
-
3.84  
-
3.7  
-
V
V
V
Low Level Output  
Voltage  
CMOS Loads  
V
or V  
-
-
0.1  
0.26  
-
-
0.1  
0.33  
-
-
0.1  
0.4  
OL  
IL  
Low Level Output  
Voltage  
TTL Loads  
Input Leakage  
Current  
I
V
and  
0
0
5.5  
5.5  
5.5  
-
-
-
-
-
-
±0.1  
8
-
-
-
±1  
80  
±5  
-
-
-
±1  
µA  
µA  
µA  
I
CC  
GND  
Quiescent Device  
Current  
I
V
or  
160  
±10  
CC  
CC  
GND  
Three-State Leakage  
Current  
I
V
or V  
V =  
O
±0.5  
OZ  
IL  
IH  
V
or  
CC  
GND  
Additional Quiescent  
Device Current Per  
Input Pin: 1 Unit Load  
I  
CC  
(Note 2)  
V
-
4.5 to  
5.5  
-
100  
360  
-
450  
-
490  
µA  
CC  
-2.1  
NOTE:  
2. For dual-supply systems theoretical worst case (V = 2.4V, V  
I
= 5.5V) specification is 1.8mA.  
CC  
HCT Input Loading Table  
INPUT  
UNIT LOADS  
OE  
0.75  
0.4  
0.3  
1.5  
SI, SO  
Dn  
MR  
NOTE: Unit Load is I  
360µA max at 25 C.  
limit specified in DC Electrical Table, e.g.,  
CC  
o
6
CD54HC40105, CD74HC40105, CD54HCT40105, CD74HCT40105  
Prerequisite for Switching Specifications  
o
o
o
o
o
25 C  
-40 C TO 85 C  
-55 C TO 125 C  
PARAMETER  
HC TYPES  
SYMBOL  
V
(V)  
MIN  
MAX  
MIN  
MAX  
MIN  
MAX  
UNITS  
CC  
SI Pulse Width  
HIGH or LOW  
t
t
t
t
t
2
80  
16  
14  
120  
24  
20  
200  
40  
34  
200  
40  
34  
120  
24  
20  
50  
10  
9
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
100  
20  
17  
150  
30  
26  
250  
50  
43  
250  
50  
43  
150  
30  
26  
65  
13  
11  
5
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
120  
24  
20  
180  
36  
31  
300  
60  
51  
300  
60  
51  
180  
36  
31  
75  
15  
13  
5
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
ns  
ns  
W
W
W
W
W
4.5  
6
2
ns  
SO Pulse Width  
HIGH or LOW  
ns  
4.5  
6
ns  
ns  
DIR Pulse Width  
HIGH or LOW  
2
ns  
4.5  
6
ns  
ns  
DOR Pulse Width  
HIGH or LOW  
2
ns  
4.5  
6
ns  
ns  
MR Pulse Width HIGH  
2
ns  
4.5  
6
ns  
ns  
Removal Time  
MR to SI  
t
REM  
2
ns  
4.5  
6
ns  
ns  
Set-Up Time  
Dn to SI  
t
2
5
ns  
SU  
4.5  
6
5
5
5
ns  
5
5
5
ns  
Hold Time  
Dn to SI  
t
2
125  
25  
21  
3
155  
31  
26  
2
190  
38  
32  
2
ns  
H
4.5  
6
ns  
ns  
Maximum Pulse Frequency  
SI, SO  
f
MAX  
2
MHz  
MHz  
MHz  
4.5  
6
15  
18  
12  
14  
10  
12  
HCT TYPES  
SI Pulse Width HIGH or LOW  
t
t
4.5  
4.5  
16  
16  
-
-
20  
20  
-
-
24  
24  
-
-
ns  
ns  
W
SO Pulse Width HIGH or  
LOW  
W
DIR Pulse Width HIGH or  
LOW  
t
t
t
4.5  
4.5  
40  
40  
-
-
50  
50  
-
-
60  
60  
-
-
ns  
ns  
W
W
W
DOR Pulse Width HIGH or  
LOW  
MR Pulse Width HIGH  
Removal Time MR to SI  
Set-Up Time Dn to SI  
Hold Time Dn to SI  
4.5  
4.5  
4.5  
4.5  
4.5  
24  
15  
0
-
-
-
-
-
30  
19  
0
-
-
-
-
-
36  
22  
0
-
-
-
-
-
ns  
ns  
t
f
REM  
t
ns  
SU  
t
25  
15  
31  
12  
38  
10  
ns  
H
Maximum Pulse Frequency  
SI, SO  
MHz  
MAX  
7
CD54HC40105, CD74HC40105, CD54HCT40105, CD74HCT40105  
Switching Specifications Input t , t = 6ns  
r
f
o
o
o
o
o
25 C  
-40 C TO 85 C -55 C TO 125 C  
TEST  
SYMBOL CONDITIONS  
V
CC  
(V)  
PARAMETER  
HC TYPES  
MIN TYP MAX  
MIN  
MAX  
MIN  
MAX UNITS  
Propagation Delay  
MR to DIR, DOR  
t
t
t
t
C = 50pF  
2
4.5  
5
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
175  
35  
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
220  
44  
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
265  
53  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
MHz  
pF  
pF  
PHL,  
L
t
PLH  
C = 50pF  
L
C = 15pF  
15  
-
-
-
-
L
C = 50pF  
6
30  
37  
45  
L
SI to DIR  
SO to DOR  
SO to Qn  
C = 50pF  
2
-
210  
42  
265  
53  
315  
63  
PHL,  
L
t
PLH  
C = 50pF  
4.5  
5
-
L
C = 15pF  
18  
-
-
-
-
L
C = 50pF  
6
36  
45  
54  
L
C = 50pF  
2
-
210  
42  
265  
53  
315  
63  
PHL,  
L
t
PLH  
C = 50pF  
4.5  
5
-
L
C = 15pF  
18  
-
-
-
-
L
C = 50pF  
6
36  
45  
54  
L
C = 50pF  
2
-
400  
80  
500  
100  
-
600  
120  
-
PHL,  
L
t
PLH  
C = 50pF  
4.5  
5
-
L
C = 15pF  
35  
-
-
L
C = 50pF  
6
68  
85  
102  
3000  
600  
510  
3750  
750  
638  
2250  
450  
380  
225  
45  
L
Propagation Delay/Ripple thru  
Delay  
SI to DOR  
t
C = 50pF  
2
-
2000  
400  
340  
2500  
500  
425  
1500  
300  
260  
150  
30  
2500  
500  
425  
3125  
625  
532  
1900  
380  
330  
190  
38  
PLH  
PLH  
PLH  
L
4.5  
6
-
-
Propagation Delay/Ripple thru  
Delay  
SO to DIR  
t
t
C = 50pF  
2
-
L
4.5  
6
-
-
Propagation Delay/Ripple thru  
Delay  
SI to Qn  
C = 50pF  
2
-
L
4.5  
6
-
-
Three-State Output Enable  
t
t
t
t
C = 50pF  
2
-
PZH, PZL  
L
OE to Q  
n
4.5  
6
-
-
26  
33  
38  
Three-State Output Disable  
OE to Qn  
t
C = 50pF  
2
-
140  
28  
175  
35  
210  
42  
PHZ, PLZ  
L
C = 50pF  
4.5  
6
-
L
C = 50pF  
-
24  
30  
36  
L
Output Transition Time  
, t  
TLH THL  
C = 50pF  
2
-
75  
95  
110  
22  
L
4.5  
6
-
15  
19  
-
13  
16  
19  
Maximum SI, SO Frequency  
Input Capacitance  
f
C = 15pF  
5
32  
-
-
-
-
MAX  
L
C
C = 50pF  
-
10  
10  
10  
IN  
L
Power Dissipation Capacitance  
(Notes 3, 4)  
C
C = 15pF  
5
83  
-
-
-
PD  
L
8
CD54HC40105, CD74HC40105, CD54HCT40105, CD74HCT40105  
Switching Specifications Input t , t = 6ns (Continued)  
r
f
o
o
o
o
o
25 C  
-40 C TO 85 C -55 C TO 125 C  
TEST  
V
CC  
(V)  
PARAMETER  
SYMBOL CONDITIONS  
MIN TYP MAX  
MIN  
MAX  
MIN  
MAX UNITS  
Three-State Output  
Capacitance  
C
C = 50pF  
-
-
-
15  
-
15  
-
15  
pF  
O
L
HCT TYPES  
Propagation Delay Time  
t
t
t
t
C = 50pF  
4.5  
5
-
-
-
-
-
-
-
-
-
-
15  
-
36  
-
-
-
-
-
-
-
-
-
-
45  
-
-
-
-
-
-
-
-
-
-
54  
-
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
PLH,  
L
t
PHL  
MR to DIR, DOR  
SI to DIR  
C = 15pF  
L
C = 50pF  
4.5  
5
42  
-
53  
-
63  
-
PLH,  
L
t
PHL  
C =15pF  
18  
-
L
SO to DOR  
SO to Qn  
C = 50pF  
4.5  
5
42  
-
53  
-
63  
-
PLH,  
L
t
PHL  
C =15pF  
18  
-
L
C = 50pF  
4.5  
5
80  
-
100  
-
120  
-
PLH,  
L
t
PHL  
C =15pF  
35  
-
L
Propagation Delay/Ripple thru  
t
C = 50pF  
4.5  
400  
500  
600  
PLH  
L
Delay  
SI to DOR  
Propagation Delay/Ripple thru  
Delay  
SO to DIR  
t
t
C = 50pF  
4.5  
4.5  
-
-
-
-
500  
300  
-
-
625  
380  
-
-
750  
450  
ns  
ns  
PLH  
PLH  
L
Propagation Delay/Ripple thru  
C = 50pF  
L
Delay  
SI to Qn  
Three-State Output Enable  
t
t
t
t
C = 50pF  
4.5  
4.5  
-
-
-
-
35  
30  
-
-
44  
38  
-
-
53  
45  
ns  
ns  
PZH, PZL  
L
OE to Q  
n
Three-State Output Disable  
OE to Qn  
t
C = 50pF  
PHZ, PLZ L  
Output Transition Time  
Maximum CP Frequency  
Input Capacitance  
, t  
TLH THL  
C = 50pF  
4.5  
5
-
-
-
-
-
15  
-
-
-
-
-
19  
-
-
-
-
-
22  
-
ns  
MHz  
pF  
L
f
C =15pF  
32  
-
MAX  
L
C
C = 50pF  
-
10  
-
10  
-
10  
-
IN  
L
Power Dissipation Capacitance  
(Notes 3, 4)  
C
C =15pF  
5
83  
pF  
PD  
L
Three-State Output  
Capacitance  
C
C = 50pF  
-
-
-
15  
-
15  
-
15  
pF  
O
L
NOTES:  
3. C  
is used to determine the dynamic power consumption, per package.  
PD  
4. P = C  
2
2
V
f + Σ (C V  
f ) where f = Input Frequency, f = Output Frequency, C = Output Load Capacitance, V  
= Supply  
D
PD CC  
i
L
CC  
o
i
o
L
CC  
Voltage.  
9
CD54HC40105, CD74HC40105, CD54HCT40105, CD74HCT40105  
Test Circuits and Waveforms  
I
t
+ t =  
WH  
WL  
I
t C = 6ns  
fC  
r
L
t
+ t  
=
L
WL  
WH  
t C = 6ns  
t C  
f
L
fC  
t C  
f
L
L
r
L
3V  
V
CC  
90%  
10%  
2.7V  
0.3V  
CLOCK  
CLOCK  
50%  
10%  
1.3V  
0.3V  
50%  
t
50%  
1.3V  
t
1.3V  
GND  
GND  
t
t
WH  
WL  
WH  
WL  
NOTE: Outputs should be switching from 10% V  
to 90% V  
in  
NOTE: Outputs should be switching from 10% V  
to 90% V  
in  
CC  
CC  
CC  
CC  
accordance with device truth table. For f  
, input duty cycle = 50%.  
accordance with device truth table. For f  
, input duty cycle = 50%.  
MAX  
MAX  
FIGURE 3. HC CLOCK PULSE RISE AND FALL TIMES AND  
PULSE WIDTH  
FIGURE 4. HCT CLOCK PULSE RISE AND FALL TIMES AND  
PULSE WIDTH  
t = 6ns  
t = 6ns  
t = 6ns  
t = 6ns  
r
f
r
f
V
3V  
CC  
90%  
50%  
10%  
2.7V  
1.3V  
0.3V  
INPUT  
INPUT  
GND  
GND  
t
t
t
t
THL  
TLH  
THL  
TLH  
90%  
1.3V  
90%  
50%  
10%  
INVERTING  
OUTPUT  
INVERTING  
OUTPUT  
10%  
t
t
PLH  
PHL  
t
t
PLH  
PHL  
FIGURE 5. HC TRANSITION TIMES AND PROPAGATION  
DELAY TIMES, COMBINATION LOGIC  
FIGURE 6. HCT TRANSITION TIMES AND PROPAGATION  
DELAY TIMES, COMBINATION LOGIC  
10  
CD54HC40105, CD74HC40105, CD54HCT40105, CD74HCT40105  
Test Circuits and Waveforms (Continued)  
t C  
t C  
t C  
t C  
r
L
f
L
f
L
r
L
V
3V  
CC  
90%  
10%  
2.7V  
0.3V  
CLOCK  
INPUT  
CLOCK  
INPUT  
50%  
1.3V  
GND  
GND  
t
t
t
t
H(L)  
H(H)  
H(H)  
H(L)  
V
3V  
CC  
DATA  
INPUT  
DATA  
INPUT  
50%  
1.3V  
t
SU(L)  
1.3V  
1.3V  
GND  
GND  
t
t
t
SU(H)  
SU(H)  
SU(L)  
t
t
90%  
50%  
t
t
THL  
TLH  
THL  
TLH  
90%  
1.3V  
90%  
90%  
1.3V  
OUTPUT  
OUTPUT  
10%  
10%  
t
t
t
PLH  
t
PHL  
PHL  
PLH  
t
REM  
t
REM  
V
3V  
CC  
SET, RESET  
OR PRESET  
SET, RESET  
OR PRESET  
50%  
1.3V  
GND  
GND  
IC  
IC  
C
C
L
L
50pF  
50pF  
FIGURE 7. HC SETUP TIMES, HOLD TIMES, REMOVAL TIME,  
AND PROPAGATION DELAY TIMES FOR EDGE  
TRIGGERED SEQUENTIAL LOGIC CIRCUITS  
FIGURE 8. HCT SETUP TIMES, HOLD TIMES, REMOVAL TIME,  
AND PROPAGATION DELAY TIMES FOR EDGE  
TRIGGERED SEQUENTIAL LOGIC CIRCUITS  
6ns  
6ns  
t
6ns  
t
6ns  
r
f
V
3V  
CC  
OUTPUT  
DISABLE  
OUTPUT  
DISABLE  
90%  
2.7  
50%  
t
1.3  
10%  
0.3  
GND  
GND  
t
t
t
t
PZL  
PZL  
PLZ  
PLZ  
OUTPUT LOW  
TO OFF  
OUTPUT LOW  
TO OFF  
50%  
50%  
1.3V  
10%  
90%  
10%  
90%  
t
t
PZH  
PHZ  
PHZ  
t
PZH  
OUTPUT HIGH  
TO OFF  
OUTPUT HIGH  
TO OFF  
1.3V  
OUTPUTS  
ENABLED  
OUTPUTS  
ENABLED  
OUTPUTS  
DISABLED  
OUTPUTS  
ENABLED  
OUTPUTS  
DISABLED  
OUTPUTS  
ENABLED  
FIGURE 9. HC THREE-STATE PROPAGATION DELAY  
WAVEFORM  
FIGURE 10. HCT THREE-STATE PROPAGATION DELAY  
WAVEFORM  
OTHER  
OUTPUT  
= 1kΩ  
INPUTS  
TIED HIGH  
OR LOW  
IC WITH  
THREE-  
STATE  
R
L
V
FOR t AND t  
PLZ  
CC  
GND FOR t  
PZL  
AND t  
PHZ  
PZH  
C
L
OUTPUT  
50pF  
OUTPUT  
DISABLE  
NOTE: Open drain waveforms t  
and t are the same as those for three-state shown on the left. The test circuit is Output R = 1kto  
PZL L  
PLZ  
V
, C = 50pF.  
CC  
L
FIGURE 11. HC AND HCT THREE-STATE PROPAGATION DELAY TEST CIRCUIT  
11  
CD54HC40105, CD74HC40105, CD54HCT40105, CD74HCT40105  
DATA OUT  
READY  
SHIFT IN  
SI DOR  
SI DOR  
D0  
Q0  
D0  
Q0  
D1  
D2  
D1  
D2  
Q1  
Q1  
Q2  
Q3  
Q2  
Q3  
D3  
DIR  
D3  
DIR  
MR  
MR  
SO  
SO  
8-BIT  
DATA  
8-BIT  
DATA  
SI DOR  
SI DOR  
D0  
Q0  
D0  
Q0  
D1  
D2  
D1  
D2  
Q1  
Q1  
Q2  
Q3  
Q2  
Q3  
D3  
DIR  
D3  
DIR  
MR  
MR  
SO  
SO  
SHIFT OUT  
DATA IN READY  
MASTER RESET  
(NOTE)  
NOTE: Pulse must be applied for cascading by 16 N bits.  
FIGURE 12. EXPANSION, 8-BITS WIDE BY 16 N-BITS LONG USING HC/HCT40105  
12  
CD54HC40105, CD74HC40105, CD54HCT40105, CD74HCT40105  
MASTER  
RESET  
SHIFT IN  
(DATA VALID)  
INPUTS  
SHIFT-IN PULSES  
HAVE NO EFFECT  
180ns  
(NOTE 6)  
SHIFT OUT  
SHIFT-OUT PULSES  
HAVE NO EFFECT  
180ns  
(NOTE 7)  
INPUT READY  
(CLEAR OUT)  
(NOTE 5)  
OUTPUTS  
OUTPUT READY  
(DATA VALID)  
DATA IN  
(Db)  
INPUTS  
THREE-STATE  
(OUTPUT  
1
0
1 1 1 0  
0
1
1
0
1 0 1 0 1 0  
ENABLE)  
DATA OUT  
(NOTE 5)  
(UNKNOWN)  
HIGH Z  
1
0
1
1
1
0
INVALID  
NOTES:  
5. Data valid goes to high level in advance of the data out by a maximum of 38ns at V  
o
= 4.5V for C = 50pF and T = 25 C.  
CC  
L
A
6. At V  
7. At V  
= 4.5V, ripple time from position 1 to position 16.  
= 4.5V, ripple time from position 16 to position 1.  
CC  
CC  
FIGURE 13. TIMING DIAGRAM FOR THE CD74HC/HCT40105  
13  
PACKAGE OPTION ADDENDUM  
www.ti.com  
26-Sep-2005  
PACKAGING INFORMATION  
Orderable Device  
Status (1)  
Package Package  
Pins Package Eco Plan (2) Lead/Ball Finish MSL Peak Temp (3)  
Qty  
Type  
CDIP  
CDIP  
PDIP  
Drawing  
CD54HC40105F3A  
CD54HCT40105F3A  
CD74HC40105E  
ACTIVE  
ACTIVE  
ACTIVE  
J
J
16  
16  
16  
1
1
TBD  
TBD  
Call TI  
Call TI  
Level-NC-NC-NC  
Level-NC-NC-NC  
N
25  
Pb-Free  
(RoHS)  
CU NIPDAU Level-NC-NC-NC  
CD74HC40105EE4  
CD74HC40105M  
ACTIVE  
ACTIVE  
ACTIVE  
ACTIVE  
ACTIVE  
ACTIVE  
ACTIVE  
ACTIVE  
ACTIVE  
ACTIVE  
ACTIVE  
ACTIVE  
ACTIVE  
ACTIVE  
ACTIVE  
PDIP  
SOIC  
SOIC  
SOIC  
SOIC  
SOIC  
SOIC  
PDIP  
PDIP  
SOIC  
SOIC  
SOIC  
SOIC  
SOIC  
SOIC  
N
D
D
D
D
D
D
N
N
D
D
D
D
D
D
16  
16  
16  
16  
16  
16  
16  
16  
16  
16  
16  
16  
16  
16  
16  
25  
Pb-Free  
(RoHS)  
CU NIPDAU Level-NC-NC-NC  
40 Green (RoHS & CU NIPDAU Level-1-260C-UNLIM  
no Sb/Br)  
CD74HC40105M96  
CD74HC40105M96E4  
CD74HC40105ME4  
CD74HC40105MT  
2500 Green (RoHS & CU NIPDAU Level-1-260C-UNLIM  
no Sb/Br)  
2500 Green (RoHS & CU NIPDAU Level-1-260C-UNLIM  
no Sb/Br)  
40 Green (RoHS & CU NIPDAU Level-1-260C-UNLIM  
no Sb/Br)  
250 Green (RoHS & CU NIPDAU Level-1-260C-UNLIM  
no Sb/Br)  
CD74HC40105MTE4  
CD74HCT40105E  
250 Green (RoHS & CU NIPDAU Level-1-260C-UNLIM  
no Sb/Br)  
25  
Pb-Free  
(RoHS)  
CU NIPDAU Level-NC-NC-NC  
CD74HCT40105EE4  
CD74HCT40105M  
25  
Pb-Free  
(RoHS)  
CU NIPDAU Level-NC-NC-NC  
40 Green (RoHS & CU NIPDAU Level-1-260C-UNLIM  
no Sb/Br)  
CD74HCT40105M96  
CD74HCT40105M96E4  
CD74HCT40105ME4  
CD74HCT40105MT  
CD74HCT40105MTE4  
2500 Green (RoHS & CU NIPDAU Level-1-260C-UNLIM  
no Sb/Br)  
2500 Green (RoHS & CU NIPDAU Level-1-260C-UNLIM  
no Sb/Br)  
40 Green (RoHS & CU NIPDAU Level-1-260C-UNLIM  
no Sb/Br)  
250 Green (RoHS & CU NIPDAU Level-1-260C-UNLIM  
no Sb/Br)  
250 Green (RoHS & CU NIPDAU Level-1-260C-UNLIM  
no Sb/Br)  
(1) The marketing status values are defined as follows:  
ACTIVE: Product device recommended for new designs.  
LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect.  
NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in  
a new design.  
PREVIEW: Device has been announced but is not in production. Samples may or may not be available.  
OBSOLETE: TI has discontinued the production of the device.  
(2)  
Eco Plan  
-
The planned eco-friendly classification: Pb-Free (RoHS) or Green (RoHS  
&
no Sb/Br)  
-
please check  
http://www.ti.com/productcontent for the latest availability information and additional product content details.  
TBD: The Pb-Free/Green conversion plan has not been defined.  
Pb-Free (RoHS): TI's terms "Lead-Free" or "Pb-Free" mean semiconductor products that are compatible with the current RoHS requirements  
for all 6 substances, including the requirement that lead not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered  
at high temperatures, TI Pb-Free products are suitable for use in specified lead-free processes.  
Green (RoHS & no Sb/Br): TI defines "Green" to mean Pb-Free (RoHS compatible), and free of Bromine (Br) and Antimony (Sb) based flame  
retardants (Br or Sb do not exceed 0.1% by weight in homogeneous material)  
Addendum-Page 1  
PACKAGE OPTION ADDENDUM  
www.ti.com  
26-Sep-2005  
(3)  
MSL, Peak Temp. -- The Moisture Sensitivity Level rating according to the JEDEC industry standard classifications, and peak solder  
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