CDCE813QPWRQ1 [TI]
具有 2.5V 和 3.3V 输出的可编程 1-PLL 时钟合成器和抖动消除器 | PW | 14 | -40 to 105;型号: | CDCE813QPWRQ1 |
厂家: | TEXAS INSTRUMENTS |
描述: | 具有 2.5V 和 3.3V 输出的可编程 1-PLL 时钟合成器和抖动消除器 | PW | 14 | -40 to 105 时钟 |
文件: | 总34页 (文件大小:1614K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
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CDCE813-Q1
ZHCSG21C –JANUARY 2017–REVISED APRIL 2019
具有 2.5V 和 3.3V 输出的 CDCE813-Q1 可编程 1-PLL 时钟合成器
和抖动消除器
1 特性
2 应用
1
•
符合汽车 应用要求
•
•
•
•
仪表组
•
具有符合 AEC-Q100 标准的下列特性:
音响主机
导航系统
–
器件温度等级 2:–40°C 至 105°C 的环境工作
温度范围
高级驾驶辅助系统 (ADAS)
–
–
器件 HBM ESD 分类等级 H2
器件 CDM ESD 分类等级 C6
3 说明
CDCE813-Q1 器件是一款基于模块化锁相环 (PLL) 的
低成本、高性能、可编程时钟合成器。它们最多可从单
个输入频率中生成 3 个输出时钟。借助集成的可配置
PLL,可在系统内针对任何时钟频率(高达 230MHz)
对每个输出进行编程。
•
•
系统内可编程和 EEPROM
–
–
串行可编程易失性寄存器
用于存储客户设置的非易失性 EEPROM
灵活的输入计时理念
–
–
外部晶体:8MHz 至 32MHz
高达 160MHz 的单端 LVCMOS
CDCE813-Q1 具有独立的输出电源引脚 VDDOUT,可提
供 2.5V 至 3.3V 电压。
•
•
高达 230MHz 的自由可选输出频率
低噪声 PLL 内核
此输入接受外部晶振或 LVCMOS 时钟信号。凭借可选
片载 VCXO,可将输出频率与外部控制信号同步。
–
–
已集成的 PLL 环路滤波器组件
低电平周期抖动(典型值 50ps)
PLL 支持 SSC(扩频时钟),从而改善抗电磁干扰
(EMI) 性能。
•
•
•
1.8V 器件电源(内核电压)
独立的输出电源引脚:3.3V 和 2.5V
灵活的时钟驱动器
器件信息(1)
–
三个用户可定义的控制输入 [S0、S1、S2],例
如 SSC 选择、频率切换、输出使能或断电
器件型号
封装
封装尺寸(标称值)
CDCE813-Q1
TSSOP (14)
5.00mm × 4.40mm
–
生成适用于视频、音频、USB、IEEE1394 和
RFID、 Bluetooth®、WLAN、以太网和 GPS 的
高精度时钟
(1) 如需了解所有可用封装,请参阅数据表末尾的可订购产品附
录。
–
生成可与 TI-DaVinci™、 OMAP™和 DSP 配合
使用的共同时钟频率
器件比较
可订购产品
CDCE813R02-Q1
CDCE813-Q1
S0 控制引脚默认功能
Y1 输出使能(高电平有效)
未使用(1)
–
–
可编程 SSC 调制
启用 0-PPM 时钟生成功能
•
•
采用 TSSOP 封装
典型应用原理图
适用于简易 PLL 设计和编程的开发和编程套件(TI
ClockPro™编程软件)
PCLK
CDCE813-Q1
I2C
SoC
To Display
Image Data
Serializer
Copyright © 2017, Texas Instruments Incorporated
(1) 必须由 I2C 控制启用输出。
1
本文档旨在为方便起见,提供有关 TI 产品中文版本的信息,以确认产品的概要。 有关适用的官方英文版本的最新信息,请访问 www.ti.com,其内容始终优先。 TI 不保证翻译的准确
性和有效性。 在实际设计之前,请务必参考最新版本的英文版本。
English Data Sheet: SNAS705
CDCE813-Q1
ZHCSG21C –JANUARY 2017–REVISED APRIL 2019
www.ti.com.cn
目录
9.3 Feature Description................................................. 12
9.4 Device Functional Modes........................................ 15
9.5 Programming........................................................... 15
9.6 Register Maps......................................................... 17
10 Application and Implementation........................ 21
10.1 Application Information.......................................... 21
10.2 Typical Application ................................................ 21
11 Power Supply Recommendations ..................... 25
12 Layout................................................................... 26
12.1 Layout Guidelines ................................................. 26
12.2 Layout Example .................................................... 26
13 器件和文档支持 ..................................................... 27
13.1 文档支持................................................................ 27
13.2 接收文档更新通知 ................................................. 27
13.3 社区资源................................................................ 27
13.4 商标....................................................................... 27
13.5 静电放电警告......................................................... 27
13.6 Glossary................................................................ 27
14 机械、封装和可订购信息....................................... 27
1
2
3
4
5
6
7
特性.......................................................................... 1
应用.......................................................................... 1
说明.......................................................................... 1
修订历史记录 ........................................................... 2
说明 (续).............................................................. 4
Pin Configuration and Functions......................... 4
Specifications......................................................... 5
7.1 Absolute Maximum Ratings ...................................... 5
7.2 ESD Ratings.............................................................. 5
7.3 Recommended Operating Conditions....................... 5
7.4 Thermal Information.................................................. 6
7.5 Electrical Characteristics .......................................... 6
7.6 Timing Requirements................................................ 8
7.7 Typical Characteristics.............................................. 9
Parameter Measurement Information ................ 10
Detailed Description ............................................ 11
9.1 Overview ................................................................. 11
9.2 Functional Block Diagram ....................................... 11
8
9
4 修订历史记录
注:之前版本的页码可能与当前版本有所不同。
Changes from Revision B (May 2018) to Revision C
Page
•
•
•
•
向数据表中添加了 CDCE813R02-Q1 可订购信息 .................................................................................................................. 1
添加了器件对比 表.................................................................................................................................................................. 1
Added default configuration information to the S0 pin description......................................................................................... 4
Removed 'CDCE813-Q1' text from the VDDOUT pin description. The information applies to both CDCE813-Q1 and
CDCE813R02-Q1 orderables................................................................................................................................................. 4
•
•
•
•
•
•
Added S0 pin information in the Overview section............................................................................................................... 11
Added S0 pin information to the Default Device Configuration section................................................................................ 13
Added CDCE813R02-Q1 Default Configuration graphic...................................................................................................... 14
Changed S0 pin information in the Factory Default Setting for Control Terminal Register tablenote.................................. 14
Added Y1_ST1 default settings for the CDCE813-Q1 and CDCE813R02-Q1 orderables .................................................. 18
Added Y1_1 default settings for the CDCE813-Q1 and CDCE813R02-Q1 orderables....................................................... 18
Changes from Revision A (May 2018) to Revision B
Page
•
Changed the text in the Default Device Configuration section from: However the outputs are disabled by default and
need to be turned on through I2C or with the S0 pin to: However the outputs are disabled by default and need to be
turned on through I2C........................................................................................................................................................... 13
•
Changed the Factory Default Setting table and Default Configuration graphic text to show that the Y1 outputs as 3-
state when S0 = 1 or S0 = 0................................................................................................................................................. 14
•
•
•
•
Changed the default value of the SLAVE_ADR 1:0 bits from: 00b to: 01b in the Generic Configuration Register table .... 18
Changed the default value of the Y1_ST0 3:2 bits from: 11b to: 01b in the Generic Configuration Register table............. 18
Changed the default value of the BCOUNT 7:1 bits from: 20h to: 00h in the Generic Configuration Register table .......... 18
Changed the default value of the Y2Y3_1 bit from: 1b to: 0b in the PLL1 Configuration Register table............................. 19
2
版权 © 2017–2019, Texas Instruments Incorporated
CDCE813-Q1
www.ti.com.cn
ZHCSG21C –JANUARY 2017–REVISED APRIL 2019
Changes from Original (January 2017) to Revision A
Page
•
Changed the Factory Default Setting table and Default Configuration graphic text to show that S0 = 1 means Y1
outputs 3-state and S0 = 0 means Y1 is enabled ................................................................................................................ 14
版权 © 2017–2019, Texas Instruments Incorporated
3
CDCE813-Q1
ZHCSG21C –JANUARY 2017–REVISED APRIL 2019
www.ti.com.cn
5 说明 (续)
为了轻松实现器件自定义来满足应用需要,该器件支持使用非易失性 EEPROM 进行编程。所有器件设置均可通过
I2C 总线(一种两线制串行接口)进行编程。
CDCE813-Q1 在 1.8V 内核环境下运行,无需额外使用独立的 XTAL 振荡器,可减少组件数量并缩减电路板尺寸。
它的运行温度范围为 –40°C 至 105°C。
6 Pin Configuration and Functions
PW Package
14-Pin TSSOP
Top View
Xin/CLK
S0
1
2
3
4
5
6
7
14
13
12
11
10
9
Xout
SDA/S1
SCL/S2
Y1
VDD
Vctr
GND
GND
Y2
VDDOUT
VDDOUT
8
Y3
Pin Functions
PIN
TYPE(1)
DESCRIPTION
NAME
NO.
GND
5, 10
G
I
Ground
SCL: serial clock input LVCMOS (default configuration), 500-kΩ internal pullup; or
S2: user-programmable control input, LVCMOS input, 500-kΩ internal pullup
SCL/S2
SDA/S1
12
13
SDA: bidirectional serial data input or output (default configuration), LVCMOS internal pullup; or
S1: user-programmable control input, LVCMOS input, 500-kΩ internal pullup
I/O or I
User-programmable control input S0, LVCMOS input, 500-kΩ internal pullup
CDCE813-Q1 default:
S0 = 1: Y1 is 3-state,
S0 = 0: Y1 is 3-state
S0
2
I
CDCE813R02-Q1 default:
S0 = 1: Y1 is enabled,
S0 = 0: Y1 is 3-state
Vctr
4
3
I
VCXO control voltage (leave open or pull up when not used)
1.8-V power supply for the device
VDD
P
P
I
VDDOUT
Xin/CLK
Xout
Y1
6, 7
1
3.3-V or 2.5-V supply for all outputs
Crystal oscillator input or LVCMOS clock input (selectable through the I2C bus)
Crystal oscillator output (leave open or pull up when not used)
LVCMOS output
14
11
9
O
O
O
O
Y2
LVCMOS output
Y3
8
LVCMOS output
(1) G = Ground, I = Input, O = Output, P = Power
4
Copyright © 2017–2019, Texas Instruments Incorporated
CDCE813-Q1
www.ti.com.cn
ZHCSG21C –JANUARY 2017–REVISED APRIL 2019
7 Specifications
7.1 Absolute Maximum Ratings
over operating free-air temperature range (unless otherwise noted)(1)
MIN
–0.5
–0.5
–0.5
–0.5
MAX
2.5
UNIT
V
VDD
VDDOUT
VI
Supply voltage
Output clocks supply voltage
Input voltage(2)(3)
Output voltage(2)
CDCE813-Q1
3.6 + 0.5
VDD + 0.5
VDDOUT + 0.5
20
V
V
VO
V
II
Input current (VI < 0, VI > VDD
)
mA
mA
IO
Continuous output current
50
TJ
Maximum junction temperature
Storage temperature
125
°C
Tstg
–65
150
(1) Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings
only, and functional operation of the device at these or any other conditions beyond those indicated under Recommended Operating
Conditions is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
(2) The input and output negative voltage ratings may be exceeded if the input and output clamp-current ratings are observed.
(3) SDA and SCL can go up to 3.6 V as stated in the Recommended Operating Conditions table.
7.2 ESD Ratings
VALUE
±2000
±1500
UNIT
Human-body model (HBM), per AEC Q100-002(1)
Charged-device model (CDM), per AEC Q100-011
V(ESD)
Electrostatic discharge
V
(1) AEC Q100-002 indicates that HBM stressing shall be in accordance with the ANSI/ESDA/JEDEC JS-001 specification.
7.3 Recommended Operating Conditions
MIN
1.7
NOM
MAX
1.9
UNIT
VDD
VO
Device supply voltage
1.8
V
V
V
V
V
Output Yx supply voltage, VDDOUT
Low-level input voltage, LVCMOS
High-level input voltage, LVCMOS
Input voltage threshold, LVCMOS
Input voltage range, S0
CDCE813-Q1
2.3
3.6
VIL
0.3 × VDD
VIH
0.7 × VDD
VI(thresh)
0.5 × VDD
0
0
0
1.9
3.6
1.9
±12
±10
15
VI(S)
V
V
Input voltage range S1, S2, SDA, SCL (VI(thresh) = 0.5 VDD
)
VI(CLK)
IOH, IOL
Input voltage range CLK
VDDOUT = 3.3 V
VDDOUT = 2.5 V
Output current
mA
CL
TA
Output load, LVCMOS
pF
°C
Operating ambient temperature
–40
105
Copyright © 2017–2019, Texas Instruments Incorporated
5
CDCE813-Q1
ZHCSG21C –JANUARY 2017–REVISED APRIL 2019
www.ti.com.cn
Recommended Operating Conditions (continued)
MIN
NOM
27
MAX
UNIT
CRYSTAL AND VCXO SPECIFICATIONS(1)
fXtal
Crystal input frequency range (fundamental mode)
Effective series resistance
Pulling range (0 V ≤ Vctr ≤ 1.8 V)(2)
8
32
MHz
Ω
ESR
fPR
100
±120
0
±150
ppm
V
Vctr
Frequency control voltage
VDD
220
20
C0 / C1
CL
Pullability ratio
On-chip load capacitance at Xin and Xout
0
pF
(1) For more information about VCXO configuration, and crystal recommendation, see application report VCXO Application Guideline for
CDCE(L)9xx Family (SCAA085).
(2) Pulling range depends on crystal type, on-chip crystal load capacitance, and PCB stray capacitance; pulling range of minimum ±120
ppm applies for crystal listed in the application report VCXO Application Guideline for CDCE(L)9xx Family (SCAA085).
7.4 Thermal Information
CDCE813-Q1
THERMAL METRIC(1)(2)
PW (TSSOP)
14 PINS
110.6
35.4
UNIT
RθJA
Junction-to-ambient thermal resistance
°C/W
°C/W
°C/W
°C/W
°C/W
°C/W
RθJC(top)
RθJB
Junction-to-case (top) thermal resistance
Junction-to-board thermal resistance
53.6
ψJT
Junction-to-top characterization parameter
Junction-to-board characterization parameter
Junction-to-case (bottom) thermal resistance
2.1
ψJB
52.8
RθJC(bot)
—
(1) For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application
report (SPRA953).
(2) The package thermal impedance is calculated in accordance with JESD 51 and JEDEC2S2P (high-K board).
7.5 Electrical Characteristics
over recommended operating free-air temperature range (unless otherwise noted)
TEST CONDITIONS
MIN TYP(1)
MAX UNIT
OVERALL PARAMETER
All outputs off,
All PLLS on
Per PLL
11
9
fCLK = 27 MHz,
fVCO = 135 MHz,
fOUT = 27 MHz
IDD
Supply current (see Figure 1)
mA
No load, all outputs on,
fOUT = 27 MHz
IDD(OUT)
IDD(PD)
V(PUC)
Supply current (see Figure 2)
VDDOUT = 3.3 V
1.3
30
mA
Power-down current. Every circuit
powered down except I2C
fIN = 0 MHz, VDD = 1.9 V
μA
Supply voltage VDD threshold for
power-up control circuit
0.85
70
1.45
V
fVCO
fOUT
VCO frequency range of PLL
LVCMOS output frequency
230 MHz
230 MHz
VDDOUT = 3.3 V
(1) All typical values are at respective nominal VDD
.
6
Copyright © 2017–2019, Texas Instruments Incorporated
CDCE813-Q1
www.ti.com.cn
ZHCSG21C –JANUARY 2017–REVISED APRIL 2019
Electrical Characteristics (continued)
over recommended operating free-air temperature range (unless otherwise noted)
TEST CONDITIONS
MIN TYP(1)
MAX UNIT
LVCMOS PARAMETER
VIK
II
LVCMOS input voltage
LVCMOS input current
VDD = 1.7 V, II = –18 mA
–1.2
±5
V
VI = 0 V or VDD, VDD = 1.9 V
μA
LVCMOS input current for S0, S1,
and S2
IIH
IIL
VI = VDD, VDD = 1.9 V
VI = 0 V, VDD = 1.9 V
5
μA
μA
LVCMOS input current for S0, S1,
and S2
–4
Input capacitance at Xin/CLK
Input capacitance at Xout
VIClk = 0 V or VDD
VIXout = 0 V or VDD
VIS = 0 V or VDD
6
2
3
CI
pF
V
Input capacitance at S0, S1, and S2
CDCE813-Q1, LVCMOS PARAMETER FOR VDDOUT = 3.3-V MODE
VDDOUT = 3 V, IOH = –0.1 mA
2.9
2.4
2.2
VOH
LVCMOS high-level output voltage
VDDOUT = 3 V, IOH = –8 mA
VDDOUT = 3 V, IOH = –12 mA
VDDOUT = 3 V, IOL = 0.1 mA
VDDOUT = 3 V, IOL = 8 mA
VDDOUT = 3 V, IOL = 12 mA
PLL bypass
0.1
0.5
0.8
VOL
LVCMOS low-level output voltage
Propagation delay
V
3.2
tPLH, tPHL
ns
PLL enabled (fCLK = fVCO), 70 MHz ≤ fVCO
85 MHz
≤
1.6
4.3
tr, tf
Rise and fall time
Cycle-to-cycle jitter(2)
Peak-to-peak period jitter(2)
Output skew (see Table 2)(3)
VDDOUT = 3.3 V (20%–80%)
1 PLL switching, Y2-to-Y3, 10,000 cycles
1 PLL switching, Y2-to-Y3
0.6
50
60
ns
ps
ps
ps
tjit(cc)
tjit(per)
tsk(o)
odc
200
200
440
55%
fOUT = 50 MHz, Y1-to-Y3
(4)
Output duty cycle
fVCO = 100 MHz, Pdiv = 1
45%
CDCE813-Q1, LVCMOS PARAMETER FOR VDDOUT = 2.5-V MODE
VDDOUT = 2.3 V, IOH = –0.1 mA
2.2
1.7
1.6
VOH
LVCMOS high-level output voltage
VDDOUT = 2.3 V, IOH = –6 mA
VDDOUT = 2.3 V, IOH = –10 mA
VDDOUT = 2.3 V, IOL = 0.1 mA
VDDOUT = 2.3 V, IOL = 6 mA
VDDOUT = 2.3 V, IOL = 10 mA
PLL bypass
V
V
0.1
0.5
0.7
VOL
LVCMOS low-level output voltage
tPLH, tPHL
tr, tf
Propagation delay
3.6
0.8
50
ns
ns
ps
ps
ps
Rise and fall time
VDDOUT = 2.5 V (20%–80%)
1 PLL switching, Y2-to-Y3, 10,000 cycles
1 PLL switching, Y2-to-Y3
fOUT = 50 MHz, Y1-to-Y3
tjit(cc)
tjit(per)
tsk(o)
Cycle-to-cycle jitter(2)
Peak-to-peak period jitter(2)
Output skew (see Table 2)(3)
Output duty cycle(4)
200
200
440
55%
60
odc
fVCO = 100 MHz, Pdiv = 1
45%
(2) Jitter depends on configuration. Jitter data is for input frequency = 27 MHz, fVCO = 108 MHz, fOUT = 27 MHz (measured at Y2).
(3) The tsk(o) specification is only valid for equal loading of each bank of outputs, and the outputs are generated from the same divider.
(4) odc depends on the output rise and fall time (tr and tf); data sampled on the rising edge (tr)
Copyright © 2017–2019, Texas Instruments Incorporated
7
CDCE813-Q1
ZHCSG21C –JANUARY 2017–REVISED APRIL 2019
www.ti.com.cn
MAX UNIT
Electrical Characteristics (continued)
over recommended operating free-air temperature range (unless otherwise noted)
TEST CONDITIONS
MIN TYP(1)
I2C PARAMETER
VIK
IIH
SCL and SDA input clamp voltage
SCL and SDA input current
I2C input high voltage(5)
VDD = 1.7 V, II = –18 mA
VI = VDD, VDD = 1.9 V
–1.2
±10
V
μA
V
VIH
0.7 × VDD
0.3 ×
VDD
VIL
I2C input low voltage(5)
V
0.2 ×
VDD
VOL
CI
SDA low-level output voltage
SCL-SDA input capacitance
IOL = 3 mA, VDD = 1.7 V
VI = 0 V or VDD
V
3
10
pF
EEPROM SPECIFICATION
EEcyc
EEret
Programming cycles of EEPROM
Data retention
100
10
1000
cycles
years
(5) SDA and SCL pins are 3.3-V tolerant.
7.6 Timing Requirements
over recommended ranges of supply voltage, load, and operating free-air temperature
MIN
NOM
MAX
UNIT
CLK_IN
PLL bypass mode
0
8
160
160
3
fCLK
LVCMOS clock input frequency
MHz
ns
PLL mode
tr and tf
Rise and fall time, CLK signal (20% to 80%)
Duty cycle of CLK at VDD / 2
40%
60%
I2C (SEE Figure 13)
Standard mode
Fast mode
0
0
100
400
fSCL
SCL clock frequency
kHz
μs
Standard mode
Fast mode
4.7
0.6
4
tsu(START) START setup time (SCL high before SDA low)
th(START) START hold time (SCL low after SDA low)
Standard mode
Fast mode
μs
0.6
4.7
1.3
4
Standard mode
Fast mode
tw(SCLL)
tw(SCLH)
th(SDA)
SCL low-pulse duration
μs
Standard mode
Fast mode
SCL high-pulse duration
SDA hold time (SDA valid after SCL low)
SDA setup time
μs
0.6
0
Standard mode
Fast mode
3.45
0.9
μs
0
Standard mode
Fast mode
250
100
tsu(SDA)
ns
Standard mode
Fast mode
1000
300
tr
SCL-SDA input rise time
SCL-SDA input fall time
STOP setup time
ns
ns
μs
tf
300
Standard mode
Fast mode
4
0.6
4.7
1.3
tsu(STOP)
Standard mode
Fast mode
tBUS
Bus free time between a STOP and START condition
μs
8
Copyright © 2017–2019, Texas Instruments Incorporated
CDCE813-Q1
www.ti.com.cn
ZHCSG21C –JANUARY 2017–REVISED APRIL 2019
7.7 Typical Characteristics
30
16
14
12
10
8
V
= 1.8 V
V
V
= 1.8 V,
= 3.3 V,
DD
DD
DDOUT
25
20
15
10
5
no load
3 Outputs on
1 PLL on
1 Output on
6
4
all PLL off
2
0
all Outputs off
0
10 30 50 70 90 110 130 150 170 190 210 230
- Output Frequency - MHz
10
60
f
110
160
210
f
- Frequency - MHz
OUT
VCO
Figure 2. CDCE813-Q1 Output Current
vs Output Frequency
Figure 1. CDCE813-Q1 Supply Current
vs PLL Frequency
Copyright © 2017–2019, Texas Instruments Incorporated
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8 Parameter Measurement Information
CDCE813-Q1
1 kW
1 kW
LVCMOS
10 pF
Copyright © 2017, Texas Instruments Incorporated
Figure 3. Test Load
CDCE813-Q1
LVCMOS
LVCMOS
series
driver
impedance
~ 50 W
line impedance
termination
Zo = 50 W
(optional)
Copyright © 2017, Texas Instruments Incorporated
Figure 4. Test Load for 50-Ω Board Environment
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9 Detailed Description
9.1 Overview
The CDCExxx-Q1 devices are modular PLL-based, low-cost, high-performance, programmable clock
synthesizers, multipliers, and dividers. They generate up to three output clocks from a single input frequency.
Each output can be programmed in-system for any clock frequency up to 230 MHz, using the integrated
configurable PLL.
The CDCExxx-Q1 devices have separate output supply pins, VDDOUT, with output of 2.5 V to 3.3 V.
The input accepts an external crystal or LVCMOS clock signal. If an external crystal is used, an on-chip load
capacitor is adequate for most applications. The value of the load capacitor is programmable from 0 pF to 20 pF.
Additionally, a selectable on-chip VCXO allows synchronization of the output frequency to an external control
signal, that is, the PWM signal.
The deep M / N divider ratio allows the generation of zero-ppm audio-video, networking (WLAN, Bluetooth,
Ethernet, GPS) or interface (USB, IEEE1394, memory stick) clocks from, for example, a 27-MHz reference input
frequency.
The PLL supports spread-spectrum clocking (SSC). SSC can be center-spread or down-spread clocking, which
is a common technique to reduce electromagnetic interference (EMI).
Based on the PLL frequency and the divider settings, the internal loop filter components are automatically
adjusted to achieve high stability and optimized jitter transfer characteristics.
The device supports nonvolatile EEPROM programming for easy customization of the device to the application. It
is preset to a factory default configuration (see Default Device Configuration). It can be reprogrammed to a
different application configuration before PCB assembly, or reprogrammed by in-system programming. All device
settings are programmable through the SDA-SCL bus, a 2-wire serial interface.
Three programmable control inputs, S0, S1, and S2, can be used to select different frequencies, change SSC
setting for lowering EMI, or control other features like outputs disable to low, outputs in Hi-Z state, power down,
PLL bypass, and so forth). For CDCE813-Q1, the S0 pin is unused by default. For the CDCE813R02-Q1, the S0
control input pin provides output enable (OE) control for output Y1 only.
The CDCE813-Q1 core operates in a 1.8-V environment. It operates in a temperature range of –40°C to 105°C.
9.2 Functional Block Diagram
GND
V
DD
V
DDOUT
Input Clock
V
ctr
LV
Pdiv1
10-Bit
Y1
CMOS
Xin/CLK
VCXO
XO
LV
CMOS
Pdiv2
Y2
Y3
PLL 1
LVCMOS
7-Bit
with SSC
Xout
LV
Pdiv3
7-Bit
CMOS
PLL Bypass
EEPROM
Programming
and I2C
Register
S0
S1/SDA
S2/SCL
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9.3 Feature Description
9.3.1 Control Terminal Configuration
The CDCE813-Q1 device has three user-definable control terminals (S0, S1, and S2), which allow external
control of device settings. They can be programmed to any of the following functions:
•
•
•
Spread-spectrum clocking selection → spread type and spread amount selection
Frequency selection → switching between any of two user-defined frequencies
Output state selection → output configuration and power-down control
The user can predefine up to eight different control settings. Table 1 and Table 2 explain these settings.
Table 1. Control Terminal Definition
EXTERNAL CONTROL
PLL1 SETTING
Y1 SETTING
BITS
PLL frequency
selection
Output Y2 and Y3
selection
Control function
SSC selection
Output Y1 and power-down selection
(1)
Table 2. PLL1 Setting
SSCx [3 BITS]
SSC SELECTION (CENTER AND DOWN)
CENTER
DOWN
0
0
0
0
1
1
1
1
0
0
1
1
0
0
1
1
0
1
0
1
0
1
0
1
0% (off)
±0.25%
±0.5%
0% (off)
–0.25%
–0.5%
±0.75%
±1.0%
–0.75%
–1.0%
±1.25%
±1.5%
–1.25%
–1.5%
±2.0%
–2.0%
(1) Center and down-spread, Frequency0, Frequency1, State0, and State1 are user-definable in PLL1
configuration register.
(1)
Table 3. PLL1 Setting, Frequency Selection
FSx
0
FUNCTION
Frequency 0
Frequency 1
1
(1) Frequency0 and Frequency1 can be any frequency within the
specified fVCO range.
(1)
Table 4. PLL1 Setting, Output Selection (Y2, Y3)
Y2, Y3
FUNCTION
State 0
0
1
State 1
(1) State0 or State1 selection is valid for both outputs of the
corresponding PLL module and can be power down, Hi-Z state, low,
or active.
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(1)
Table 5. Y1 Setting
Y1
0
FUNCTION
State 0
State 1
1
(1) State0 and State1 are user definable in the generic configuration
register and can be power down, Hi-Z state, low, or active.
The S1/SDA and S2/SCL pins of the CDCE813-Q1 device are dual-function pins. In the default configuration,
they are defined as SDA and SCL for the serial programming interface. They can be programmed as control pins
(S1 and S2) by setting the appropriate bits in the EEPROM.
NOTE
Changes to the control register (Bit [6] of byte 02h) have no effect until they are written
into the EEPROM.
Once they are set as control pins, the serial programming interface is no longer available. However, if VDDOUT is
forced to GND, the two control pins, S1 and S2, temporally act as serial programming pins (SDA and SCL).
S0 is not a multi-use pin; it is a control pin only.
9.3.2 Default Device Configuration
The internal EEPROM of the CDCE813-Q1 device is pre-configured with a factory default configuration as shown
in Figure 5 (the input frequency is routed through PLL1 to the outputs as a default). This mode can be used to
clean the jitter of an incoming clock signal. For the CDCE813-Q1, the outputs are disabled by default and must
be turned on through I2C. For the CDCE813R02-Q1, output Y1 is enabled through the S0 control pin (active
high), while outputs Y2 and Y3 are either in a tri-state condition or disabled by the register default. Y1 is enabled
when S0 is floating because S0 has an internal pullup.
The default setting appears either after power is supplied or after a power-down – power-up sequence until it is
reprogrammed by the user to a different application configuration. A new register setting is programmed through
the serial I2C interface.
VDDOUT
VDD
GND
Vctr
LV
CMOS
Pdiv1 = 1
Y1 = 3-state
1.8V LVCMOS
CLK input
LVCMOS
LV
CMOS
Pdiv2 = 0
PLL 1 enabled
FIN = FVCO
Y2 = 3-state
Y3 = 3-state
(disabled)
LV
CMOS
Pdiv3 = 0
(disabled)
PLL Bypass
^1_ = outputs 3-State
^0_ = outputs 3-State
S0
Programming
and
SDA/SCL Register
SDA
Programming Bus
SCL
Figure 5. CDCE813-Q1 Default Configuration
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VDDOUT
VDD
GND
Vctr
LV
CMOS
Pdiv1 = 1
Y1 = enable
through S0 pin
1.8V LVCMOS
CLK input
LVCMOS
LV
CMOS
Pdiv2 = 0
PLL 1 enabled
FIN = FVCO
Y2 = 3-state
Y3 = 3-state
(disabled)
LV
CMOS
Pdiv3 = 0
(disabled)
PLL Bypass
Programming
^1_ = Y1 output enable
^0_ = Y1 output 3-state
S0
and
SDA
SCL
Programming Bus
SDA/SCL Register
Figure 6. CDCE813R02-Q1 Default Configuration
Table 6 shows the factory default setting for the Control Terminal Register.
NOTE
Even though eight different register settings are possible, in the default configuration, only
the first two settings (0 and 1) can be selected with S0, as S1 and S2 are configured as
programming pins in default mode.
(1)
Table 6. Factory Default Setting for Control Terminal Register
Y1
PLL1 SETTINGS
GPN
EXTERNAL CONTROL PINS
OUTPUT
SELECTION
FREQUENCY
SELECTION
SSC
SELECTION
OUTPUT
SELECTION
S2
S1
S0
0
Y1
FS1
SSC1
Off
Y2Y3
3-state
3-state
3-state
3-state
SCL (I2C)
SCL (I2C)
SCL (I2C)
SCL (I2C)
SDA (I2C)
SDA (I2C)
SDA (I2C)
SDA (I2C)
3-state
3-state
3-state
Enabled
fVCO1_0
fVCO1_0
fVCO1_0
fVCO1_0
CDCE813-Q1
1
Off
0
Off
CDCE813R02-
Q1
1
Off
(1) In default mode or when programmed respectively, S1 and S2 act as serial programming interface, I2C. They do not have any control-
pin function but they are internally interpreted as if S1 = 0 and S2 = 0. For the CDCE813-Q1, S0 is an unused control pin by default. For
the CDCE813R02-Q1, S0 provides output enable (OE) control output Y1 only.
9.3.3 I2C Serial Interface
The CDCE813-Q1 device operates as a slave device on the 2-wire serial I2C bus compatible with the popular
SMBus or I2C specification. It operates in the standard-mode transfer (up to 100 kbps) and fast-mode transfer
(up to 400 kbps) and supports 7-bit addressing.
The S1/SDA and S2/SCL pins of the CDCE813-Q1 device are dual-function pins. In the default configuration,
they are used as the I2C serial programming interface. They can be reprogrammed as general-purpose control
pins, S1 and S2, by changing the corresponding EEPROM setting, byte 02h, bit [6].
9.3.4 Data Protocol
The device supports Byte Write and Byte Read and Block Write and Block Read operations.
For Byte Write/Read operations, the system controller can individually access addressed bytes.
For Block Write/Read operations, the bytes are accessed in sequential order from lowest to highest byte (with
most-significant bit first) with the ability to stop after any complete byte has been transferred. The numbers of
bytes read out are defined by Byte Count in the generic configuration register. At the Block Read instruction, all
bytes defined in Byte Count must be read out to finish the read cycle correctly.
14
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Once a byte has been sent, it is written into the internal register and is effective immediately. This applies to
each transferred byte, regardless of whether this is a Byte Write or a Block Write sequence.
If the EEPROM write cycle is initiated, the internal SDA registers are written into the EEPROM. During this write
cycle, data is not accepted at the I2C bus until the write cycle is completed. However, data can be read out
during the programming sequence (Byte Read or Block Read). The programming status can be monitored by
EEPIP, byte 01h–bit 6.
The offset of the indexed byte is encoded in the command code, as described in Table 7.
Table 7. Slave Receiver Address (7 Bits)
DEVICE
A6
1
A5
1
A4
0
A3
0
A2
1
A1(1)
A0(1)
R/W
1/0
1/0
1/0
1/0
CDCE813-Q1
CDCEx925
CDCEx937
CDCEx949
0
0
0
0
1
0
1
0
1
1
0
0
1
1
1
0
1
1
1
1
0
1
1
(1) Address bits A0 and A1 are programmable through the I2C bus (byte 01, bits [1:0]. This allows addressing up to 4 devices connected to
the same I2C bus. The least-significant bit of the address byte designates a write or read operation.
9.4 Device Functional Modes
9.4.1 SDA and SCL Hardware Interface
Figure 7 shows how the CDCE813-Q1 clock synthesizer is connected to the I2C serial interface bus. Multiple
devices can be connected to the bus, but it may be necessary to reduce the speed (400 kHz is the maximum) if
many devices are connected.
Note that the pullup resistors (RP) depend on the supply voltage, bus capacitance, and number of connected
devices. The recommended pullup value is 4.7 kΩ. The resistor must meet the minimum sink current of 3 mA at
VOLmax = 0.4 V for the output stages (for more details see the SMBus or I2C Bus specifications in the Timing
Requirements table).
CDCE813-Q1
Rp
Rp
Master
SDA
Slave
SCL
CBUS CBUS
Copyright © 2017, Texas Instruments Incorporated
Figure 7. I2C Hardware Interface
9.5 Programming
Table 8. Command Code Definition
BIT
DESCRIPTION
0 = Block Read or Block Write operation
1 = Byte Read or Byte Write operation
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Programming (continued)
Table 8. Command Code Definition (continued)
BIT
DESCRIPTION
(6:0)
Byte offset for Byte Read, Block Read, Byte Write, and Block Write operations
1
7
1
1
8
1
1
S
Slave Address
A
Data Byte
A
P
R/W
MSB
LSB
MSB
LSB
S
Start Condition
Sr Repeated Start Condition
1 = Read (Rd) From CDCE9xx Device; 0 = Write (Wr) to CDCE9xxx
Acknowledge (ACK = 0 and NACK =1)
Stop Condition
R/W
A
P
Master-to-Slave Transmission
Slave-to-Master Transmission
Figure 8. Generic Programming Sequence
1
7
1
1
8
1
8
1
1
S
Slave Address
Wr
A
CommandCode
A
Data Byte
A
P
Figure 9. Byte Write Protocol
1
7
1
1
8
1
1
7
1
1
S
Slave Address
Wr
A
CommandCode
A
Sr
Slave Address
Rd
A
8
1
1
Data Byte
A
P
Figure 10. Byte Read Protocol
1
7
1
1
8
1
8
1
S
Slave Address
Wr
A
CommandCode
A
Byte Count = N
A
8
1
8
1
8
1
1
Data Byte 0
A
Data Byte 1
A
…
Data Byte N-1
A
P
(1) Data byte 0 bits [7:0] is reserved for Revision Code and Vendor Identification. Also, it is used for internal test purpose
and should not be overwritten.
Figure 11. Block Write Protocol
1
7
1
1
8
1
1
7
1
1
S
Slave Address
Wr
A
CommandCode
A
Sr
Slave Address
Rd
A
8
1
8
1
8
1
1
Byte Count N
A
Data Byte 0
A
…
Data Byte N-1
A
P
Figure 12. Block Read Protocol
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Bit 7 (MSB)
Bit 6
Bit 0 (LSB)
P
S
A
P
t
w(SCLL)
t
w(SCLH)
t
r
t
f
V
IH
SCL
V
IL
t
t
t
su(START)
h(START)
su(SDA)
t
t
h(SDA)
su(STOP)
t
f
t
t
r
(BUS)
V
IH
SDA
V
IL
Figure 13. Timing Diagram for I2C Serial Control Interface
9.6 Register Maps
9.6.1 I2C Configuration Registers
The clock input, control pins, PLLs, and output stages are user configurable. The following tables and
explanations describe the programmable functions of the CDCE813-Q1 device. All settings can be manually
written into the device through the I2C bus or easily programmed by using the TI ClockPro™ programming
software. The TI ClockPro™ programming software allows the user to make all settings quickly, and
automatically calculates the values for optimized performance at lowest jitter.
Table 9. I2C Registers
ADDRESS OFFSET
REGISTER DESCRIPTION
Generic configuration register
PLL1 configuration register
TABLE
Table 11
Table 12
00h
10h
The grey-highlighted bits, described in the configuration register tables in the following pages, belong to the
control terminal register. The user can predefine up to eight different control settings. These settings then can be
selected by the external control pins, S0, S1, and S2. See the Control Terminal Configuration section.
Table 10. Configuration Register, External Control Terminals
Y1
PLL1 SETTINGS
EXTERNAL
CONTROL PINS
OUTPUT
SELECTION
OUTPUT SELECTION
FREQUENCY SELECTION
SSC SELECTION
S2
0
S1
0
S0
0
Y1
FS1
SSC1
Y2Y3
0
1
2
3
4
5
6
7
Y1_0
Y1_1
Y1_2
Y1_3
Y1_4
Y1_5
Y1_6
Y1_7
04h
FS1_0
FS1_1
FS1_2
FS1_3
FS1_4
FS1_5
FS1_6
FS1_7
13h
SSC1_0
SSC1_1
SSC1_2
SSC1_3
SSC1_4
SSC1_5
SSC1_6
SSC1_7
10h–12h
Y2Y3_0
Y2Y3_1
Y2Y3_2
Y2Y3_3
Y2Y3_4
Y2Y3_5
Y2Y3_6
Y2Y3_7
15h
0
0
1
0
1
0
0
1
1
1
0
0
1
0
1
1
1
0
1
1
1
Address offset(1)
(1) Address offset refers to the byte address in the configuration register in Table 11 and Table 12.
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Table 11. Generic Configuration Register
OFFSET(1) BIT(2)
ACRONYM
E_EL
RID
DEFAULT(3)
DESCRIPTION
Device identification (read-only): 1 is CDCE813-Q1 (3.3 Vout)
7
1b
Xb
1h
0b
00h
6:4
3:0
7
Revision identification number (read-only)
Vendor identification number (read-only)
Reserved – always write 0
VID
—
0 – EEPROM programming is completed.
1 – EEPROM is in programming mode.
6
5
EEPIP
0b
0b
EEPROM programming Status:(4) (read-only)
Permanently lock EEPROM data(5)
0 – EEPROM is not locked.
1 – EEPROM is permanently locked.
EELOCK
Device power down (overwrites S0, S1, and S2 settings; configuration register settings are unchanged)
Note: PWDN cannot be set to 1 in the EEPROM.
01h
4
PWDN
0b
0 – Device active (PLL1 and all outputs are enabled)
1 – Device power down (PLL1 in power down and all outputs in Hi-Z state)
00 – Xtal
10 – LVCMOS
11 – Reserved
3:2
INCLK
10b
Input clock selection:
01 – VCXO
SLAVE_AD
R
1:0
7
01b
1b
Address bits A0 and A1 of the slave receiver address
M1
Clock source selection for output Y1:
0 – Input clock
1 – PLL1 clock
Operation mode selection for pins 12 and 13(6)
6
SPICON
0b
0 – Serial programming interface SDA (pin 13) and SCL (pin 12)
1 – Control pins S1 (pin 13) and S2 (pin 12)
CDCE813-Q1: 01b
CDCE813R02-Q1:
11b
02h
5:4
3:2
Y1_ST1
Y1_ST0
Y1-State0/1 definition
00 – Device power down (all PLLs in power down and all
outputs in Hi-Z state)
10 – Y1 disabled to low
11 – Y1 enabled
01b
01 – Y1 disabled to Hi-Z state
1:0
7:0
7
Pdiv1 [9:8]
Pdiv1 [7:0]
Y1_7
0 – Divider reset and stand-by
1 to 1023 – Divider value
001h
10-bit Y1-output-divider Pdiv1:
03h
04h
0b
0b
0b
0b
0b
0b
6
Y1_6
5
Y1_5
4
Y1_4
0 – State0 (predefined by Y1_ST0)
1 – State1 (predefined by Y1_ST1)
Y1_x State selection(7)
3
Y1_3
2
Y1_2
CDCE813-Q1: 0b
CDCE813R02-Q1: 1b
1
0
Y1_1
Y1_0
0b
00h
0b
Crystal load capacitor selection(8)
00h – 0 pF
01h – 1 pF
02h – 2 pF
7:3
2:0
XCSEL
05h
:14h to 1Fh – 20 pF
Reserved – do not write other than 0
(1) Writing data beyond 20h may affect device function.
(2) All data transferred with the MSB first
(3) Unless customer-specific setting
(4) During EEPROM programming, no data is allowed to be sent to the device through the I2C bus until the programming sequence is
completed. Data, however, can be read out during the programming sequence (Byte Read or Block Read).
(5) If this bit is set to high in the EEPROM, the actual data in the EEPROM is permanently locked. No further programming is possible.
Data, however can still be written through the I2C bus to the internal register to change device function on the fly, but new data can no
longer be saved to the EEPROM. EELOCK is effective only if written into the EEPROM.
(6) Selection of control pins is effective only if written into the EEPROM. Once written into the EEPROM, the serial programming pins are no
longer available. However, if VDDOUT is forced to GND, the two control pins, S1 and S2, temporarily act as serial programming pins
(SDA-SCL), and the two slave receiver address bits are reset to A0 = 0 and A1 = 0.
(7) These are the bits of the control terminal register (see Table 10 ). The user can predefine up to eight different control settings. These
settings then can be selected by the external control pins, S0, S1, and S2.
(8) The internal load capacitor (C1, C2) must be used to achieve the best clock performance. External capacitors should be used only to
finely adjust CL by a few picofarads. The value of CL can be programmed with a resolution of 1 pF for a crystal load range of 0 pF to 20
pF. For CL > 20 pF, use additional external capacitors. The device input capacitance value must be considered, which always adds 1.5
pF (6 pF//2 pF) to the selected CL. For more about VCXO configuring and crystal recommendation, see application report VCXO
Application Guideline for CDCE(L)9xx Family (SCAA085).
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Table 11. Generic Configuration Register (continued)
ACRONYM
DEFAULT(3)
DESCRIPTION
7-bit byte count (defines the number of bytes which will be sent from this device at the next Block Read transfer); all bytes
must be read out to finish the read cycle correctly.
7:1
BCOUNT
00h
06h
0– No EEPROM write cycle
1 – Start EEPROM write cycle (internal registers are saved to the EEPROM)
(4)(9)
0
EEWRITE
—
0b
0h
Initiate EEPROM write cycle
07h-0Fh
Unused address range
(9) The EEPROM WRITE bit must be sent last. This ensures that the content of all internal registers are stored in the EEPROM. The
EEWRITE cycle is initiated with the rising edge of the EEWRITE bit. A static level-high does not trigger an EEPROM WRITE cycle. The
EEWRITE bit must be reset to low after the programming is completed. The programming status can be monitored by reading out
EEPIP. If EELOCK is set to high, no EEPROM programming is possible.
Table 12. PLL1 Configuration Register
OFFSET(1)
BIT(2)
7:5
4:2
1:0
7
ACRONYM
SSC1_7 [2:0]
SSC1_6 [2:0]
SSC1_5 [2:1]
SSC1_5 [0]
SSC1_4 [2:0]
SSC1_3 [2:0]
SSC1_2 [2]
SSC1_2 [1:0]
SSC1_1 [2:0]
SSC1_0 [2:0]
FS1_7
DEFAULT(3)
DESCRIPTION
(4)
000b
SSC1: PLL1 SSC selection (modulation amount).
10h
000b
Down
000 (off)
Center
000 (off)
001 – 0.25%
010 – 0.5%
011 – 0.75%
100 – 1.0%
101 – 1.25%
110 – 1.5%
111 – 2.0%
001 ± 0.25%
010 ± 0.5%
011 ± 0.75%
100 ± 1.0%
101 ± 1.25%
110 ± 1.5%
111 ± 2.0%
000b
6:4
3:1
0
000b
000b
11h
12h
000b
7:6
5:3
2:0
7
000b
000b
0b
(4)
FS1_x: PLL1 frequency selection
6
FS1_6
0b
5
FS1_5
0b
4
FS1_4
0b
13h
14h
15h
0 – fVCO1_0 (predefined by PLL1_0 – multiplier/divider value)
1 – fVCO1_1 (predefined by PLL1_1 – multiplier/divider value)
3
FS1_3
0b
2
FS1_2
0b
1
FS1_1
0b
0
FS1_0
0b
0 – PLL1
7
6
MUX1
M2
0b
1b
PLL1 multiplexer:
1 – PLL1 bypass (PLL1 is in power down)
0 – Pdiv1
1 – Pdiv2
Output Y2 multiplexer:
Output Y3 Multiplexer:
00 – Pdiv1-divider
01 – Pdiv2-divider
10 – Pdiv3-divider
11 – Reserved
5:4
M3
10b
3:2
1:0
Y2Y3_ST1
Y2Y3_ST0
00b
01b
00 – Y2 and Y3 disabled to Hi-Z state (PLL1 is in power down)
01 – Y2 and Y3 disabled to Hi-Z state
10–Y2 and Y3 disabled to low
Y2, Y3-
State0/1definition:
11 – Y2 and Y3 enabled
(4)
7
6
5
4
3
2
1
0
Y2Y3_7
Y2Y3_6
Y2Y3_5
Y2Y3_4
Y2Y3_3
Y2Y3_2
Y2Y3_1
Y2Y3_0
0b
0b
0b
0b
0b
0b
0b
0b
Y2Y3_x output state selection.
0 – State0 (predefined by Y2Y3_ST0)
1 – State1 (predefined by Y2Y3_ST1)
(1) Writing data beyond 20h may adversely affect device function.
(2) All data is transferred MSB-first.
(3) Unless a custom setting is used
(4) The user can predefine up to eight different control settings. In normal device operation, these settings can be selected by the external
control pins, S0, S1, and S2.
Copyright © 2017–2019, Texas Instruments Incorporated
19
CDCE813-Q1
ZHCSG21C –JANUARY 2017–REVISED APRIL 2019
www.ti.com.cn
Table 12. PLL1 Configuration Register (continued)
OFFSET(1)
BIT(2)
ACRONYM
DEFAULT(3)
DESCRIPTION
PLL1 SSC down or center
selection:
0 – Down
1 – Center
7
SSC1DC
0b
16h
0 – Reset and standby
1 to 127 – Divider value
6:0
7
Pdiv2
—
00h
0b
7-bit Y2-output-divider Pdiv2:
Reserved – do not write other than 0
7-bit Y3-output-divider Pdiv3:
17h
0 – Reset and standby
1 to 127 – Divider value
6:0
Pdiv3
00h
18h
19h
7:0
7:4
3:0
7:3
2:0
7:5
4:2
PLL1_0N [11:4]
PLL1_0N [3:0]
PLL1_0R [8:5]
PLL1_0R[4:0]
PLL1_0Q [5:3]
PLL1_0Q [2:0]
PLL1_0P [2:0]
1FFh
000h
PLL1_0(5): 30-bit multiplier or divider value for frequency fVCO1_0
(for more information, see PLL Frequency Planning).
1Ah
10h
100b
1Bh
00 – fVCO1_0 < 125 MHz
01 – 125 MHz ≤ fVCO1_0 < 150 MHz
10 – 150 MHz ≤ fVCO1_0 < 175 MHz
1:0
VCO1_0_RANGE
00b
fVCO1_0 range selection:
11 – fVCO1_0 ≥ 175 MHz
1Ch
1Dh
1Eh
7:0
7:4
3:0
7:3
2:0
7:5
4:2
PLL1_1N [11:4]
PLL1_1N [3:0]
PLL1_1R [8:5]
PLL1_1R[4:0]
PLL1_1Q [5:3]
PLL1_1Q [2:0]
PLL1_1P [2:0]
1FFh
000h
PLL1_1(5): 30-bit multiplier or divider value for frequency fVCO1_1
(for more information, see PLL Frequency Planning).
10h
1Fh
100b
00 – fVCO1_1 < 125 MHz
01 – 125 MHz ≤ fVCO1_1 < 150 MHz
10 – 150 MHz ≤ fVCO1_1 < 175 MHz
1:0
VCO1_1_RANGE
00b
fVCO1_1 range selection:
11 – fVCO1_1 ≥ 175 MHz
(5) PLL settings limits: 16 ≤ q ≤ 63, 0 ≤ p ≤ 7, 0 ≤ r ≤ 511, 0 < N < 4096
20
Copyright © 2017–2019, Texas Instruments Incorporated
CDCE813-Q1
www.ti.com.cn
ZHCSG21C –JANUARY 2017–REVISED APRIL 2019
10 Application and Implementation
NOTE
Information in the following applications sections is not part of the TI component
specification, and TI does not warrant its accuracy or completeness. TI’s customers are
responsible for determining suitability of components for their purposes. Customers should
validate and test their design implementation to confirm system functionality.
10.1 Application Information
The CDCE813-Q1 device is an easy-to-use, high-performance, programmable CMOS clock synthesizer which
can be used as a crystal buffer, clock synthesizer with separate output supply pin. The CDCE813-Q1 device
features an on-chip loop filter and spread-spectrum modulation. Programming can be done through the I2C
interface, or previously saved settings can be loaded from on-chip EEPROM. The pins S0, S1, and S2 can be
programmed as control pins to select various output settings. This section shows some examples of using the
CDCE813-Q1 device in various applications.
10.2 Typical Application
Figure 14 shows the application example of CDCE813-Q1 in combination with an SoC processor and an FPD-
Link3 serializer, serving as a PCLK jitter cleaner.
VDD_1p8
VDDO_3p3
L2
120 Q
L1
120 Q
C1
0.1 …F
C4
1000pF
C6
0.1µF
C2
0.01 …F
C3
1000 pF
C5
0.01µF
U2
3
4
6
7
VDDOUT
VDDOUT
VDD
R1
U1
VCTRL
XIN/CLK
XOUT
R2
11
9
4.7k
GND
Y1
Y2
Y3
R3
860 Q
1
18 Q
GND
U3
PCLK
14
R4
8
1 lQ
PCLK
5
10
GND
GND
S0
SDA
SCL
GND
13
12
CDCE813-Q1
SoC
To Display
GND
Serializer
Image Data
Copyright © 2017, Texas Instruments Incorporated
Figure 14. PCLK Jitter Cleaner Reference Design
10.2.1 Design Requirements
The CDCE813-Q1 device supports spread-spectrum clocking (SSC) with multiple control parameters:
•
•
•
Modulation amount (%)
Modulation frequency (>20 kHz)
Center spread or down spread (± or –)
Copyright © 2017–2019, Texas Instruments Incorporated
21
CDCE813-Q1
ZHCSG21C –JANUARY 2017–REVISED APRIL 2019
www.ti.com.cn
Typical Application (continued)
Figure 15. Modulation Frequency (fm) and Modulation Amount
10.2.2 Detailed Design Procedure
10.2.2.1 Spread-Spectrum Clock (SSC)
Spread-spectrum modulation is a method to spread emitted energy over a larger bandwidth. In clocking, spread
spectrum can reduce electromagnetic interference (EMI) by reducing the level of emission from clock distribution
network.
CDCS502 with a 25-MHz Crystal, FS = 1, fOUT = 100 MHz, and 0%, ±0.5, ±1%, and ±2% SSC
Figure 16. Comparison Between Typical Clock Power Spectrum and Spread-Spectrum Clock
Spread spectrum clocking can be used to help reduce EMI to meet design specifications. For example, a
specified EMI threshold of 55 dB/mV would require ±1% spread-spectrum clocking to meet this requirement.
22
Copyright © 2017–2019, Texas Instruments Incorporated
CDCE813-Q1
www.ti.com.cn
ZHCSG21C –JANUARY 2017–REVISED APRIL 2019
Typical Application (continued)
10.2.2.2 PLL Frequency Planning
At a given input frequency (fIN), the output frequency (fOUT) of the CDCE813-Q1 device is calculated with
Equation 1.
ƒIN
´
N
ƒOUT
=
Pdiv
M
•
M (1 to 511) and N (1 to 4095) are the multiplier or divider values of the PLL,
and Pdiv (1 to 127) is the output divider.
•
(1)
(2)
The target VCO frequency (ƒVCO) of each PLL is calculated with Equation 2.
N
ƒVCO = ƒIN
´
M
The PLL internally operates as fractional divider and needs the following multiplier or divider settings:
•
•
•
•
N
P = 4 – int(log2N / M); if P < 0 then P = 0
Q = int(N' / M)
R = N′ – M × Q
where
•
•
•
int(X) = integer portion of X
N′ = N × 2P
N ≥ M
80 MHz ≤ ƒVCO ≤ 230 MHz
16 ≤ Q ≤ 63
0 ≤ P ≤ 4
0 ≤ R ≤ 51
Example:
for ƒIN = 27 MHz; M = 1; N = 4; Pdiv = 2
→ fOUT = 54 MHz
for ƒIN = 27 MHz; M = 2; N = 11; Pdiv = 2
→ fOUT = 74.25 MHz
→ fVCO = 108 MHz
→ fVCO = 148.50 MHz
→ P = 4 – int(log24) = 4 – 2 = 2
→ N' = 4 × 22 = 16
→ P = 4 – int(log25.5) = 4 – 2 = 2
→ N' = 11 × 22 = 44
→ Q = int(16) = 16
→ Q = int(22) = 22
→ R = 16 – 16 = 0
→ R = 44 – 44 = 0
The values for P, Q, R, and N’ are automatically calculated when using TI Pro-Clock™ software.
10.2.2.3 Crystal Oscillator Start-Up
When the CDCE813-Q1 device can be used as a crystal buffer, the crystal oscillator start-up dominates the start-
up time compared to the internal PLL lock time. Figure 17 shows the oscillator start-up sequence for a 27-MHz
crystal input with an 8-pF load. The start-up time for the crystal is on the order of approximately 250 µs
compared to approximately 10 µs of lock time. In general, lock time is an order of magnitude less compared to
the crystal start-up time.
Copyright © 2017–2019, Texas Instruments Incorporated
23
CDCE813-Q1
ZHCSG21C –JANUARY 2017–REVISED APRIL 2019
www.ti.com.cn
Typical Application (continued)
Figure 17. Crystal Oscillator Start-Up vs PLL Lock Time
10.2.2.4 Frequency Adjustment With Crystal Oscillator Pulling
The frequency for the CDCE813-Q1 device is adjusted for media and other applications with the VCXO control
input Vctr. If a PWM-modulated signal is used as a control signal for the VCXO, an external filter is needed.
LP
CDCE813-Q1
Vctrl
PWM
control
signal
Xin/CLK
Xout
Copyright © 2017, Texas Instruments Incorporated
Figure 18. Frequency Adjustment Using PWM Input to the VCXO Control
10.2.2.5 Unused Inputs and Outputs
If VCXO-pulling functionality is not required, Vctr should be left floating. All other unused inputs should be set to
GND. Unused outputs should be left floating.
If one output block is not used, TI recommends disabling it. However, TI recommends providing a supply for all
output blocks, even if they are disabled.
10.2.2.6 Switching Between XO and VCXO Mode
When the CDCE813-Q1 device is in the crystal-oscillator or VCXO configuration, the internal capacitors require
different internal capacitance. The following steps are recommended to switch to VCXO mode when the
configuration for the on-chip capacitor is still set for XO mode. To center the output frequency to 0 ppm:
1. While in XO mode, put Vctr = VDD / 2
2. Switch from XO mode to VCXO mode
3. Program the internal capacitors to obtain 0 ppm at the output.
24
Copyright © 2017–2019, Texas Instruments Incorporated
CDCE813-Q1
www.ti.com.cn
ZHCSG21C –JANUARY 2017–REVISED APRIL 2019
Typical Application (continued)
10.2.3 Application Curves
Figure 19, Figure 20, Figure 21, and Figure 22 show CDCE813-Q1 measurements with the SSC feature enabled.
Device configuration: 27-MHz input, 27-MHz output.
Figure 19. fOUT = 27 MHz,
Figure 20. fOUT = 27 MHz,
VCO frequency < 125 MHz, SSC (2% Center)
VCO frequency > 175 MHz, SSC (1%, Center)
Figure 22. Output Spectrum With SSC On,
2% Center
Figure 21. Output Spectrum With SSC Off
11 Power Supply Recommendations
There is no restriction on the power-up sequence. In case VDDOUT is applied first, TI recommends grounding the
VDD. In case VDDOUT is powered while VDD is floating, there is a risk of high current flowing on the VDDOUT pins.
The device has a power-up control that is connected to the 1.8-V supply. This keeps the whole device disabled
until the 1.8-V supply reaches a sufficient voltage level. Then the device switches on all internal components,
including the outputs. If a 3.3-V VDDOUT is available before the 1.8-V, the outputs stay disabled until the 1.8-V
supply has reached a certain level.
Copyright © 2017–2019, Texas Instruments Incorporated
25
CDCE813-Q1
ZHCSG21C –JANUARY 2017–REVISED APRIL 2019
www.ti.com.cn
12 Layout
12.1 Layout Guidelines
When the CDCE813-Q1 device is used as a crystal buffer, any parasitic across the crystal affect the pulling
range of the VCXO. Therefore, take care in placing the crystal units on the board. Crystals must be placed as
close to the device as possible, ensuring that the routing lines from the crystal terminals to Xin and Xout have the
same length.
If possible, cut out both ground plane and power plane under the area where the crystal and the routing to the
device are placed. In this area, always avoid routing any other signal line, as it could be a source of noise
coupling.
Additional discrete capacitors can be required to meet the load capacitance specification of certain crystals. For
example, a 10.7-pF load capacitor is not fully programmable on the chip, because the internal capacitor can
range from 0 pF to 20 pF with steps of 1 pF. The 0.7-pF capacitor therefore can be discretely added on top of an
internal 10-pF capacitor.
To minimize the inductive influence of the trace, TI recommends placing this small capacitor as close to the
device as possible and symmetrically with respect to Xin and Xout.
Figure 23 shows a conceptual layout detailing recommended placement of power-supply bypass capacitors. For
component-side mounting, use 0402 body-size capacitors to facilitate signal routing. Keep the connections
between the bypass capacitors and the power supply on the device as short as possible. Ground the other side
of the capacitor using a low-impedance connection to the ground plane.
12.2 Layout Example
1
4
3
2
1
3
2
Place crystal with associated load
capacitors close to the chip.
Place series termination resistors at
clock outputs to improve signal integrity.
4
Place bypass capacitors close to the
Use ferrite beads to isolate the device
supply pins from board noise sources.
device pins; ensure wide frequency range.
Figure 23. Annotated Layout
26
版权 © 2017–2019, Texas Instruments Incorporated
CDCE813-Q1
www.ti.com.cn
ZHCSG21C –JANUARY 2017–REVISED APRIL 2019
13 器件和文档支持
13.1 文档支持
13.1.1 相关文档
请参阅如下相关文档:
•
•
•
•
•
•
《面向 CDCE(L)9xx 系列的 VCXO 应用指南》(文献编号:SCAA085)
《针对 CDCE(L)9xx 系列选择晶振的实际问题》(文献编号:SLEA071)
《针对 CDCE(L)9xx 系列的 I2C/EEPROM 常规使用》(文献编号:SCAA104)
《使用硅器件替代晶体或晶体振荡器》(文献编号:SNAA217)
《I2C 在 CDCE(L)949、CDCE(L)937、CDCE(L)925、CDCE(L)813 中的应用》(SCAA105)
《使用低频字时钟为音频数据转换器生成低相位噪声时钟》(文献编号:SCAA088)
13.2 接收文档更新通知
要接收文档更新通知,请导航至 TI.com.cn 上的器件产品文件夹。单击右上角的通知我 进行注册,即可每周接收产
品信息更改摘要。有关更改的详细信息,请查看任何已修订文档中包含的修订历史记录。
13.3 社区资源
The following links connect to TI community resources. Linked contents are provided "AS IS" by the respective
contributors. They do not constitute TI specifications and do not necessarily reflect TI's views; see TI's Terms of
Use.
TI E2E™ Online Community TI's Engineer-to-Engineer (E2E) Community. Created to foster collaboration
among engineers. At e2e.ti.com, you can ask questions, share knowledge, explore ideas and help
solve problems with fellow engineers.
Design Support TI's Design Support Quickly find helpful E2E forums along with design support tools and
contact information for technical support.
13.4 商标
DaVinci, OMAP, ClockPro, E2E are trademarks of Texas Instruments.
Bluetooth is a registered trademark of Bluetooth SIG, Inc.
All other trademarks are the property of their respective owners.
13.5 静电放电警告
这些装置包含有限的内置 ESD 保护。 存储或装卸时,应将导线一起截短或将装置放置于导电泡棉中,以防止 MOS 门极遭受静电损
伤。
13.6 Glossary
SLYZ022 — TI Glossary.
This glossary lists and explains terms, acronyms, and definitions.
14 机械、封装和可订购信息
以下页面包含机械、封装和可订购信息。这些信息是指定器件的最新可用数据。数据如有变更,恕不另行通知,且
不会对此文档进行修订。如需获取此数据表的浏览器版本,请查阅左侧的导航栏。
版权 © 2017–2019, Texas Instruments Incorporated
27
PACKAGE OPTION ADDENDUM
www.ti.com
10-Dec-2020
PACKAGING INFORMATION
Orderable Device
Status Package Type Package Pins Package
Eco Plan
Lead finish/
Ball material
MSL Peak Temp
Op Temp (°C)
Device Marking
Samples
Drawing
Qty
(1)
(2)
(3)
(4/5)
(6)
CDCE813QPWRQ1
ACTIVE
ACTIVE
TSSOP
TSSOP
PW
PW
14
14
2000 RoHS & Green
2000 RoHS & Green
NIPDAU
Level-3-260C-168 HR
Level-3-260C-168 HR
-40 to 105
-40 to 105
CE813Q
E813Q02
CDCE813R02TPWRQ1
NIPDAU
(1) The marketing status values are defined as follows:
ACTIVE: Product device recommended for new designs.
LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect.
NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design.
PREVIEW: Device has been announced but is not in production. Samples may or may not be available.
OBSOLETE: TI has discontinued the production of the device.
(2) RoHS: TI defines "RoHS" to mean semiconductor products that are compliant with the current EU RoHS requirements for all 10 RoHS substances, including the requirement that RoHS substance
do not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, "RoHS" products are suitable for use in specified lead-free processes. TI may
reference these types of products as "Pb-Free".
RoHS Exempt: TI defines "RoHS Exempt" to mean products that contain lead but are compliant with EU RoHS pursuant to a specific EU RoHS exemption.
Green: TI defines "Green" to mean the content of Chlorine (Cl) and Bromine (Br) based flame retardants meet JS709B low halogen requirements of <=1000ppm threshold. Antimony trioxide based
flame retardants must also meet the <=1000ppm threshold requirement.
(3) MSL, Peak Temp. - The Moisture Sensitivity Level rating according to the JEDEC industry standard classifications, and peak solder temperature.
(4) There may be additional marking, which relates to the logo, the lot trace code information, or the environmental category on the device.
(5) Multiple Device Markings will be inside parentheses. Only one Device Marking contained in parentheses and separated by a "~" will appear on a device. If a line is indented then it is a continuation
of the previous line and the two combined represent the entire Device Marking for that device.
(6)
Lead finish/Ball material - Orderable Devices may have multiple material finish options. Finish options are separated by a vertical ruled line. Lead finish/Ball material values may wrap to two
lines if the finish value exceeds the maximum column width.
Important Information and Disclaimer:The information provided on this page represents TI's knowledge and belief as of the date that it is provided. TI bases its knowledge and belief on information
provided by third parties, and makes no representation or warranty as to the accuracy of such information. Efforts are underway to better integrate information from third parties. TI has taken and
continues to take reasonable steps to provide representative and accurate information but may not have conducted destructive testing or chemical analysis on incoming materials and chemicals.
TI and TI suppliers consider certain information to be proprietary, and thus CAS numbers and other limited information may not be available for release.
In no event shall TI's liability arising out of such information exceed the total purchase price of the TI part(s) at issue in this document sold by TI to Customer on an annual basis.
Addendum-Page 1
PACKAGE OPTION ADDENDUM
www.ti.com
10-Dec-2020
Addendum-Page 2
PACKAGE MATERIALS INFORMATION
www.ti.com
3-Jun-2022
TAPE AND REEL INFORMATION
REEL DIMENSIONS
TAPE DIMENSIONS
K0
P1
W
B0
Reel
Diameter
Cavity
A0
A0 Dimension designed to accommodate the component width
B0 Dimension designed to accommodate the component length
K0 Dimension designed to accommodate the component thickness
Overall width of the carrier tape
W
P1 Pitch between successive cavity centers
Reel Width (W1)
QUADRANT ASSIGNMENTS FOR PIN 1 ORIENTATION IN TAPE
Sprocket Holes
Q1 Q2
Q3 Q4
Q1 Q2
Q3 Q4
User Direction of Feed
Pocket Quadrants
*All dimensions are nominal
Device
Package Package Pins
Type Drawing
SPQ
Reel
Reel
A0
B0
K0
P1
W
Pin1
Diameter Width (mm) (mm) (mm) (mm) (mm) Quadrant
(mm) W1 (mm)
CDCE813QPWRQ1
TSSOP
PW
PW
14
14
2000
2000
330.0
330.0
12.4
12.4
6.9
6.9
5.6
5.6
1.6
1.6
8.0
8.0
12.0
12.0
Q1
Q1
CDCE813R02TPWRQ1 TSSOP
Pack Materials-Page 1
PACKAGE MATERIALS INFORMATION
www.ti.com
3-Jun-2022
TAPE AND REEL BOX DIMENSIONS
Width (mm)
H
W
L
*All dimensions are nominal
Device
Package Type Package Drawing Pins
SPQ
Length (mm) Width (mm) Height (mm)
CDCE813QPWRQ1
TSSOP
TSSOP
PW
PW
14
14
2000
2000
356.0
356.0
356.0
356.0
35.0
35.0
CDCE813R02TPWRQ1
Pack Materials-Page 2
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TI“按原样”提供技术和可靠性数据(包括数据表)、设计资源(包括参考设计)、应用或其他设计建议、网络工具、安全信息和其他资源,
不保证没有瑕疵且不做出任何明示或暗示的担保,包括但不限于对适销性、某特定用途方面的适用性或不侵犯任何第三方知识产权的暗示担
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