CSD16301Q2 [TI]
N-Channel NexFET Power MOSFETs; N通道NexFET功率MOSFET
| 型号： | CSD16301Q2 |
| 厂家： | 
TEXAS INSTRUMENTS |
| 描述： | N-Channel NexFET Power MOSFETs |
| 文件： | 总10页 (文件大小：167K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
CSD16301Q2
www.ti.com.............................................................................................................................................................................................. SLPS235 –OCTOBER 2009
N-Channel NexFET™ Power MOSFETs
Check for Samples: CSD16301Q2
1
FEATURES
Table 1. PRODUCT SUMMARY
2
•
•
•
•
•
•
Ultralow Qg and Qgd
Low Thermal Resistance
Pb Free Terminal Plating
RoHS Compliant
VDS
Qg
Drain to Source Voltage
Gate Charge Total (–4.5V)
Gate Charge Gate to Drain
25
2
V
nC
nC
mΩ
mΩ
mΩ
V
Qgd
0.4
VGS = 3V
27
23
19
Halogen Free
RDS(on) Drain to Source On Resistance
VGS = 4.5V
VGS = 8V
SON 2-mm × 2-mm Plastic Package
VGS(th)
Threshold Voltage
1.1
APPLICATIONS
•
•
DC-DC Converters
Battery and Load Management Applications
Text and br Added for Spacing
ORDERING INFORMATION
Device
Package
Media
Qty
Ship
DESCRIPTION
SON 2-mm × 2-mm
Plastic Package
13-Inch
Reel
Tape and
Reel
CSD16301Q2
3000
The NexFET™ power MOSFET has been designed
to minimize losses in power conversion and load
management applications. The SON 2x2 offers
excellent thermal performance for the size of the
package.
Text and br Added for Spacing
ABSOLUTE MAXIMUM RATINGS
TA = 25°C unless otherwise stated
VALUE
UNIT
V
VDS
VGS
Drain to Source Voltage
25
Top View
Gate to Source Voltage
+10 / –8
V
Continuous Drain Current, TC = 25°C
Continuous Drain Current(1)
Pulsed Drain Current, TA = 25°C(2)
Power Dissipation(1)
5
5
A
ID
D
D
G
1
2
3
6
5
4
D
D
S
A
D
IDM
PD
TJ,
20
2.3
A
W
Operating Junction and Storage
TSTG Temperature Range
–55 to 150
10
°C
Avalanche Energy, single pulse
ID = 14A, L = 0.1mH, RG = 25Ω
EAS
mJ
S
(1) Packaged Limited.
P0108-01
(2) Pulse duration 10μs, duty cycle ≤2%
RDS(on) vs VGS
GATE CHARGE
80
70
60
50
40
30
20
10
0
8
I
V
= 4A
I
D
= 4A
D
7
6
5
4
3
2
1
0
= 12.5V
DS
T
= 125°C
C
T
= 25°C
C
0
1
2
3
4
5
6
7
8
9
10
0.0
0.5
1.0
1.5
Q − Gate Charge − nC
g
2.0
2.5
3.0
3.5
V
GS
− Gate to Source Voltage − V
G006
G003
1
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of Texas
Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.
2
NexFET is a trademark of Texas Instruments.
PRODUCTION DATA information is current as of publication date.
Products conform to specifications per the terms of the Texas
Instruments standard warranty. Production processing does not
necessarily include testing of all parameters.
Copyright © 2009, Texas Instruments Incorporated
CSD16301Q2
SLPS235 –OCTOBER 2009.............................................................................................................................................................................................. www.ti.com
ELECTRICAL CHARACTERISTICS
TA = 25°C, unless otherwise specified
PARAMETER
TEST CONDITIONS
MIN TYP MAX UNIT
Static Characteristics
BVDSS
IDSS
Drain to Source Voltage
VGS = 0V, ID = 250μA
25
V
μA
nA
V
Drain to Source Leakage Current
Gate to Source Leakage Current
Gate to Source Threshold Voltage
VGS = 0V, VDS = 20V
VDS = 0V, VGS = +10/–8V
VDS = VGS, IDS = 250μA
VGS = 3V, IDS = 4A
1
100
1.4
34
IGSS
VGS(th)
0.9
1.1
27
mΩ
mΩ
mΩ
S
RDS(on)
Drain to Source On Resistance
Transconductance
VGS = 4.5V, IDS = 4A
VGS = 8V, IDS = 4A
23
29
19
24
gfs
VDS = 15V, IDS = 4A
16.5
Dynamic Characteristics
CISS
COSS
CRSS
Rg
Input Capacitance
260
165
13
340
215
17
pF
pF
pF
Ω
Output Capacitance
Reverse Transfer Capacitance
Series Gate Resistance
Gate Charge Total (4.5V)
Gate Charge – Gate to Drain
Gate Charge Gate to Source
Gate Charge at Vth
Output Charge
VGS = 0V, VDS = 12.5V, f = 1MHz
1.3
2
2.6
2.8
Qg
nC
nC
nC
nC
nC
ns
ns
ns
ns
Qgd
Qgs
Qg(th)
QOSS
td(on)
tr
0.4
0.6
0.3
3
VDS = 10V, IDS = 4A
VDS = 12.5V, VGS = 0V
Turn On Delay Time
Rise Time
2.7
4.4
4.1
1.7
VDS = 12.5V, VGS = 4.5V, IDS = 4A
RG = 2Ω
td(off)
tf
Turn Off Delay Time
Fall Time
Diode Characteristics
VSD
Qrr
trr
Diode Forward Voltage
IDS = 4A, VGS = 0V
0.8
5.1
11
1
V
Reverse Recovery Charge
Reverse Recovery Time
VDD = 12.5V, IF = 4A, di/dt = 200A/μs
VDD = 12.5V, IF = 4A, di/dt = 200A/μs
nC
ns
THERMAL CHARACTERISTICS
TA = 25°C, unless otherwise specified
PARAMETER
Thermal Resistance Junction to Case(1)
Thermal Resistance Junction to Ambient(1) (2)
MIN
TYP
MAX
UNIT
°C/W
°C/W
RθJC
RθJA
8.4
69
(1)
R
θJC is determined with the device mounted on a 1-inch2 (6.45-cm2), 2-oz. (0.071-mm thick) Cu pad on a 1.5-inch × 1.5-inch (3.81-cm ×
3.81-cm), 0.06-inch (1.52-mm) thick FR4 PCB. RθJC is specified by design, whereas RθJA is determined by the user’s board design.
(2) Device mounted on FR4 material with 1-inch2 (6.45-cm2), 2-oz. (0.071-mm thick) Cu.
2
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Product Folder Link(s): CSD16301Q2
CSD16301Q2
www.ti.com.............................................................................................................................................................................................. SLPS235 –OCTOBER 2009
GATE
Source
GATE
Source
Max RθJA = 69°C/W
when mounted on
1 inch2 (6.45 cm2) of
2-oz. (0.071-mm thick)
Cu.
Max RθJA = 220°C/W
when mounted on
minimum pad area of
2-oz. (0.071-mm thick)
Cu.
DRAIN
DRAIN
M0164-02
M0164-01
TYPICAL MOSFET CHARACTERISTICS
TA = 25°C, unless otherwise specified
10
1
0.5
0.3
0.1
0.1
Duty Cycle = t /t
1
2
0.05
P
0.02
0.01
t
1
0.01
t
2
Single Pulse
Typical R
= 177oC/W (min Cu)
x R
qJA
T
= P x Z
qJA
J
qJA
0.001
0.0001
0.001
0.01
0.1
1
10
100
1k
t
− Pulse Duration − s
P
G012
Figure 1. Transient Thermal Impedance
Copyright © 2009, Texas Instruments Incorporated
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SLPS235 –OCTOBER 2009.............................................................................................................................................................................................. www.ti.com
TYPICAL MOSFET CHARACTERISTICS (continued)
TA = 25°C, unless otherwise specified
10
9
8
7
6
5
4
3
2
1
0
10
9
8
7
6
5
4
3
2
1
0
V
DS
= 5V
V
= 4.5V
GS
V
= 3.5V
= 2.5V
GS
T = 125°C
C
V
GS
T
= 25°C
C
V
GS
= 2V
V
GS
= 1.5V
T
= −55°C
C
0.0
0.5
1.0
1.5
2.0
1.00
1.25
1.50
1.75
2.00
2.25
2.50
V
DS
− Drain to Source Voltage − V
V
GS
− Gate to Source Voltage − V
G001
G002
Figure 2. Saturation Characteristics
Figure 3. Transfer Characteristics
8
7
6
5
4
3
2
1
0
0.6
0.5
0.4
0.3
0.2
0.1
0.0
I
V
= 4A
f = 1MHz
= 0V
D
= 12.5V
V
DS
GS
C
OSS
= C + C
DS GD
C
ISS
= C
+ C
GD GS
C
RSS
= C
GD
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
0
5
10
15
20
25
Q
− Gate Charge − nC
V
DS
− Drain to Source Voltage − V
g
G003
G004
Figure 4. Gate Charge
Figure 5. Capacitance
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
80
70
60
50
40
30
20
10
0
I
D
= 250µA
I
D
= 4A
T
= 125°C
C
T
= 25°C
C
−75
−25
25
75
125
175
0
1
2
3
4
5
6
7
8
9
10
T
− Case Temperature − °C
V
GS
− Gate to Source Voltage − V
C
G005
G006
Figure 6. Threshold Voltage vs. Temperature
Figure 7. On-State Resistance vs. Gate to Source Voltage
4
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Product Folder Link(s): CSD16301Q2
CSD16301Q2
www.ti.com.............................................................................................................................................................................................. SLPS235 –OCTOBER 2009
TYPICAL MOSFET CHARACTERISTICS (continued)
TA = 25°C, unless otherwise specified
10
1
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
I
V
= 4A
D
= 4.5V
GS
0.1
T
= 125°C
C
0.01
0.001
0.0001
T
= 25°C
C
−75
−25
25
75
125
175
0.0
0.2
0.4
0.6
0.8
1.0
T
− Case Temperature − °C
V
SD
− Source to Drain Voltage − V
C
G007
G008
Figure 8. Normalized On-State Resistance vs. Temperature
Figure 9. Typical Diode Forward Voltage
100
100
100ms
10
T
= 25oC
C
1ms
T
= 125oC
10
1
C
10ms
Area Limited
100ms
by R
DS(on)
0.1
1s
Single Pulse
Typical R
= 177oC/W (min Cu)
DC
qJA
1
0.01
0.01
0.1
t
1
10
100
0.01
0.1
1
10
100
V
- Drain Voltage - V
− Time in Avalanche − ms
D
(AV)
G009
Figure 10. Maximum Safe Operating Area
Figure 11.
6
5
4
3
2
1
0
−50 −25
0
25
50
75
100 125 150 175
T
− Case Temperature − °C
C
G011
Figure 12. Maximum Drain Current vs. Temperature
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SLPS235 –OCTOBER 2009.............................................................................................................................................................................................. www.ti.com
MECHANICAL DATA
Q2 Package Dimensions
D2
D
5
K2
K1
K3
6
4
4
5
6
1
2
3
3
2
1
Pin 1 ID
b
e
Pin 1 Dot
Top View
D1
Bottom View
M0165-01
Front View
DIM
MILLIMETERS
NOM
INCHES
NOM
MIN
MAX
0.800
0.050
0.350
MIN
MAX
0.032
0.002
0.014
A
A1
b
0.700
0.000
0.250
0.750
0.028
0.000
0.010
0.030
0.300
0.203 TYP
2.000 TYP
0.950
0.012
C
0.008 TYP
0.080 TYP
0.038
D
D1
D2
E
0.900
0.900
1.000
1.100
0.036
0.036
0.040
0.044
0.300 TYP
2.000 TYP
1.000
0.012 TYP
0.080 TYP
0.040
E1
E2
E3
e
0.280 TYP
0.470 TYP
0.650 BSC
0.280 TYP
0.350 TYP
0.200 TYP
0.200 TYP
0.470 TYP
0.25
0.0112 TYP
0.0188 TYP
0.026 TYP
0.0112 TYP
0.014 TYP
0.008 TYP
0.008 TYP
0.0188 TYP
0.010
K
K1
K2
K3
K4
L
0.200
0.300
0.008
0.012
6
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Product Folder Link(s): CSD16301Q2
CSD16301Q2
www.ti.com.............................................................................................................................................................................................. SLPS235 –OCTOBER 2009
For recommended circuit layout for PCB designs, see
Recommended PCB Pattern
application note SLPA005
–
Reducing Ringing
Through PCB Layout Techniques.
0.65 TYP
0.85
2.30
1.40
1.10
1.05
1
0.46
0.40 TYP
0.25
M0167-01
Q2 Tape and Reel Information
4.00 0.10
2.00 0.0ꢀ
Ø 1.ꢀ0 0.10
10° Max
4.00 0.10
Ø 1.00 0.2ꢀ
1.00 0.0ꢀ
0.2ꢀ4 0.02
10° Max
2.30 0.0ꢀ
M0168-01
Notes:
1. Measured from centerline of spocket hole to centerline of pocket
2. Cumulative tolerance of 10 sprocket holes is ±0.20
3. Measured from centerline of sprocket hole to centerline of pocket
4. Other material available
5. Typical SR of form tape Max 109 OHM/SQ
6. All dimensions are in mm, unless otherwise specified.
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SLPS235 –OCTOBER 2009.............................................................................................................................................................................................. www.ti.com
Package Marking Information
Location
Top View
Bottom View
1st Line
6
4
4
6
NNNN
= 4-digit Product Code
2nd Line (Date Code)
Y
= Last digit of the Year
WW
C
= 2-digit Work Week
= Country of Origin
> Philippines = P
> Taiwan = T
NNNN
YWWC
> China = C
> Malaysia = M
1
3
3
1
Product Code = CSD16301
NNNN Mark = 1631
Pin 1
Identifier
M0166-01
8
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PACKAGE OPTION ADDENDUM
www.ti.com
16-Oct-2009
PACKAGING INFORMATION
Orderable Device
Status (1)
Package Package
Pins Package Eco Plan (2) Lead/Ball Finish MSL Peak Temp (3)
Qty
Type
Drawing
CSD16301Q2
ACTIVE
SON
DQK
6
3000 Green (RoHS &
no Sb/Br)
Call TI
Level-2-260C-1 YEAR
(1) The marketing status values are defined as follows:
ACTIVE: Product device recommended for new designs.
LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect.
NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in
a new design.
PREVIEW: Device has been announced but is not in production. Samples may or may not be available.
OBSOLETE: TI has discontinued the production of the device.
(2)
Eco Plan - The planned eco-friendly classification: Pb-Free (RoHS), Pb-Free (RoHS Exempt), or Green (RoHS & no Sb/Br) - please check
http://www.ti.com/productcontent for the latest availability information and additional product content details.
TBD: The Pb-Free/Green conversion plan has not been defined.
Pb-Free (RoHS): TI's terms "Lead-Free" or "Pb-Free" mean semiconductor products that are compatible with the current RoHS requirements
for all 6 substances, including the requirement that lead not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered
at high temperatures, TI Pb-Free products are suitable for use in specified lead-free processes.
Pb-Free (RoHS Exempt): This component has a RoHS exemption for either 1) lead-based flip-chip solder bumps used between the die and
package, or 2) lead-based die adhesive used between the die and leadframe. The component is otherwise considered Pb-Free (RoHS
compatible) as defined above.
Green (RoHS & no Sb/Br): TI defines "Green" to mean Pb-Free (RoHS compatible), and free of Bromine (Br) and Antimony (Sb) based flame
retardants (Br or Sb do not exceed 0.1% by weight in homogeneous material)
(3)
MSL, Peak Temp. -- The Moisture Sensitivity Level rating according to the JEDEC industry standard classifications, and peak solder
temperature.
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Addendum-Page 1
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相关型号：
CSD16325Q5_10
The NexFET power MOSFET has been designed to minimize losses in power conversion applications and optimized for 5V gate drive applications.
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