DRV5015A2QDBZR [TI]
高灵敏度 (±2mT)、低电压（最高 5.5V）霍尔效应锁存器 | DBZ | 3 | -40 to 125;
| 型号： | DRV5015A2QDBZR |
| 厂家： | 
TEXAS INSTRUMENTS |
| 描述： | 高灵敏度 (±2mT)、低电压（最高 5.5V）霍尔效应锁存器 | DBZ | 3 | -40 to 125 锁存器 传感器 换能器 |
| 文件： | 总26页 (文件大小：1392K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
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DRV5015
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DRV5015低电压高灵敏度数字锁存器霍尔效应传感器
1 特性
3 说明
1
•
•
数字锁存器霍尔效应传感器
高磁性灵敏度：
DRV5015 是一款低电压数字锁存器霍尔效应传感器，
专为高速和高温电机 应用。该器件由 2.5V 至 5.5V 的
电源供电，可以检测磁通量密度并根据预定义的磁性阈
值显示数字输出。
–
–
–
DRV5015A1：±0.7mT（典型值）
DRV5015A2：±1.8mT（典型值）
DRV5015A3：±1.8mT（反相，典型值）
必须交换北极和南极磁极才能切换输出，集成的磁滞能
够提供稳定可靠的切换。
•
•
•
•
•
集成迟滞
30kHz 高速感应带宽
该器件具有两个磁性阈值选项和一个反相输出选项。高
磁性灵敏度可提供低成本磁体选择和组件放置灵活性。
2.5V 至 5.5V 工作 VCC 范围
开漏输出，输出电流高达 20mA
运行温度范围：–40°C 至 +125°C
该器件在 –40°C 至 +125°C 的宽环境温度范围内能够
保持稳定一致的优异性能。
2 应用
器件信息(1)
•
•
无刷直流电机传感器
增量旋转编码：
器件型号
DRV5015
封装
SOT-23 (3)
封装尺寸（标称值）
2.92mm × 1.30mm
–
–
–
–
–
–
刷式直流电机反馈
电机速度（转速计）
机械行程
(1) 如需了解所有可用封装，请参阅数据表末尾的封装选项附录。
流体测量
人机界面旋钮
轮速
•
电动自行车
典型原理图
磁响应
VCC
OUT
VCC
DRV5015
VCC
Controller
VCC
OUT
GPIO
GPIO
BHYS
GND
VCC
DRV5015
0V
VCC
B
OUT
BRP
BOP
north
0 mT
south
GND
DRV5015A1, DRV5015A2
OUT
VCC
BHYS
0V
B
BRP
BOP
north
0 mT
south
DRV5015A3
1
本文档旨在为方便起见，提供有关 TI 产品中文版本的信息，以确认产品的概要。 有关适用的官方英文版本的最新信息，请访问 www.ti.com，其内容始终优先。 TI 不保证翻译的准确
性和有效性。 在实际设计之前，请务必参考最新版本的英文版本。
English Data Sheet: SBAS915
DRV5015
ZHCSHJ9A –JUNE 2018–REVISED APRIL 2019
www.ti.com.cn
目录
7.4 Device Functional Modes........................................ 12
Application and Implementation ........................ 13
8.1 Application Information............................................ 13
8.2 Typical Applications ................................................ 13
8.3 What to Do and What Not to Do ............................. 16
Power Supply Recommendations...................... 17
1
2
3
4
5
6
特性.......................................................................... 1
应用.......................................................................... 1
说明.......................................................................... 1
修订历史记录 ........................................................... 2
Pin Configuration and Functions......................... 3
Specifications......................................................... 3
6.1 Absolute Maximum Ratings ...................................... 3
6.2 ESD Ratings.............................................................. 3
6.3 Recommended Operating Conditions....................... 4
6.4 Thermal Information.................................................. 4
6.5 Electrical Characteristics........................................... 4
6.6 Magnetic Characteristics........................................... 4
6.7 Typical Characteristics.............................................. 5
Detailed Description .............................................. 7
7.1 Overview ................................................................... 7
7.2 Functional Block Diagram ......................................... 7
7.3 Feature Description................................................... 7
8
9
10 Layout................................................................... 17
10.1 Layout Guidelines ................................................. 17
10.2 Layout Example .................................................... 17
11 器件和文档支持 ..................................................... 18
11.1 文档支持................................................................ 18
11.2 接收文档更新通知 ................................................. 18
11.3 社区资源................................................................ 18
11.4 商标....................................................................... 18
11.5 静电放电警告......................................................... 18
11.6 术语表 ................................................................... 18
12 机械、封装和可订购信息....................................... 18
7
4 修订历史记录
Changes from Original (June 2018) to Revision A
Page
•
Changed output voltage max value from VCC + 0.3 V to 6.0 V in the Absolute Maximum Ratings table ............................. 3
2
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5 Pin Configuration and Functions
DBZ Package
3-Pin SOT-23
Top View
VCC
OUT
1
2
3
GND
Not to scale
Pin Functions
PIN
TYPE
DESCRIPTION
NAME
GND
OUT
NO.
3
Ground
Output
Ground reference.
Open-drain output.
2
2.5-V to 5.5-V power supply. Connect a ceramic capacitor with a value of at least 0.01 µF
between VCC and ground.
VCC
1
Power supply
6 Specifications
6.1 Absolute Maximum Ratings
over operating free-air temperature range (unless otherwise noted)(1)
MIN
–0.3
–0.3
MAX
6.0
UNIT
V
VCC
VOUT
IOUT
BMAX
TJ
Power supply voltage
Output voltage
6.0
V
Output current
30
mA
T
Magnetic flux density
Operating junction temperature
Storage temperature
Unlimited
150
–40
–65
°C
°C
Tstg
150
(1) Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings
only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended
Operating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
6.2 ESD Ratings
over operating free-air temperature range (unless otherwise noted)
VALUE
UNIT
Human body model (HBM), per ANSI/ESDA/JEDEC
JS-001(1)
±5000
V
V(ESD)
Electrostatic discharge
Charged device model (CDM), per JEDEC
specification JESD22-C101(2)
±1500
V
(1) JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process
(2) JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process.
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6.3 Recommended Operating Conditions
over operating free-air temperature range (unless otherwise noted)
MIN
2.5
0
MAX
5.5
UNIT
V
VCC
VOUT
IOUT
TA
Power supply voltage
Output pin voltage
5.5
V
Output sinking current
Operating ambient temperature
0
20
mA
°C
–40
125
6.4 Thermal Information
DRV5015
THERMAL METRIC(1)
SOT-23 (DBZ)
UNIT
3 PINS
356
128
94
RθJA
RθJC(top)
RθJB
YJT
Junction-to-ambient thermal resistance
Junction-to-case (top) thermal resistance
Junction-to-board thermal resistance
°C/W
°C/W
°C/W
°C/W
°C/W
Junction-to-top characterization parameter
Junction-to-board characterization parameter
11.4
92
YJB
(1) For information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application report.
6.5 Electrical Characteristics
at VCC = 2.5 V to 5.5 V, over operating free-air temperature range (unless otherwise noted)
PARAMETER
TEST CONDITION
MIN
TYP
2.3
40
MAX
2.8
70
UNIT
mA
µs
ICC
tON
td
Operating supply current
Power-on time
Propagation delay time(1)
B = BRP – 10 mT to BOP + 10 mT in 1 µs
13
25
µs
High-impedance output leakage
current
5.5 V applied to OUT, while OUT is high-
impedance
IOZ
100
0.4
nA
V
VOL
Low-level output voltage
IOUT = 20 mA
0.15
(1) See the Propagation Delay section for more information.
6.6 Magnetic Characteristics
at VCC = 2.5 V to 5.5 V, over operating free-air temperature range (unless otherwise noted)
PARAMETER
TEST CONDITION
MIN
TYP
MAX
UNIT
DRV5015A1, DRV5015A2, DRV5015A3
fBW
Sensing bandwidth
20
30
kHz
DRV5015A1
BOP
Magnetic threshold operate point
Magnetic threshold release point
–0.2
–2.0
0.35
0.7
–0.7
1.4
2.0
0.2
mT
mT
mT
BRP
BHYS
Magnetic hysteresis: |BOP – BRP|
DRV5015A2DRV5015A3
BOP
BRP
Magnetic threshold operate point
Magnetic threshold release point
0.5
–3.7
2.3
1.8
–1.8
3.6
3.7
mT
mT
mT
-0.5
BHYS
Magnetic hysteresis: |BOP –BRP|
4
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6.7 Typical Characteristics
at TA = 25°C typical (unless otherwise noted)
2
1
2
1
BRP
0
0
-1
-1
BOP
-2
-2
-40 -20
0
20
40
60
80 100 120 140 160
-40 -20
0
20
40
60
80 100 120 140 160
Ambeint Temperature (èC)
Ambient Temperature (èC)
D001
D002
图 1. BOP Threshold vs Temperature (DRV5015A1)
图 2. BRP Threshold vs Temperature (DRV5015A1)
2
1
2
1.5
1
BRP
0.5
0
0
-0.5
-1
-1
-2
-1.5
-2
BOP
2.5
3
3.5
4
4.5
5
5.5
2.5
3
3.5
4
4.5
5
5.5
Operating Supply Voltage (V)
Operating Supply Voltage (V)
D003
D004
图 3. BOP Threshold vs Supply Voltage (DRV5015A1)
图 4. BRP Threshold vs Supply Voltage (DRV5015A1)
4
3
3.5
2
1
3
2.5
2
0
1.5
1
-1
-2
-3
VCC = 2.5 V
VCC = 4 V
VCC = 5.5 V
0.5
0
BOP
-40 -20
0
20
40
60
80 100 120 140 160
-40 -20
0
20
40
60
80 100 120 140 160
Ambient Temperature (èC)
Ambient Temperature (èC)
D005
D006
图 5. ICC vs Temperature (DRV5015A1)
图 6. BOP Threshold vs Temperature
(DRV5015A2, DRV5015A3)
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Typical Characteristics (接下页)
at TA = 25°C typical (unless otherwise noted)
3
3
2
BRP
BOP
2
1
1
0
0
-1
-2
-3
-1
-2
-3
-40 -20
0
20
40
60
80 100 120 140 160
2.5
3
3.5
4
4.5
5
5.5
Ambient Temperature (èC)
Operating Supply Voltage (V)
D007
D008
图 7. BRP Threshold vs Temperature
图 8. BOP Threshold vs Supply Voltage
(DRV5015A2, DRV5015A3)
(DRV5015A2, DRV5015A3)
3
4
3.5
3
BRP
2
1
2.5
2
0
1.5
1
-1
-2
-3
VCC = 2.5 V
VCC = 4 V
VCC = 5.5 V
0.5
0
2.5
3
3.5
4
4.5
5
5.5
-40 -20
0
20
40
60
80 100 120 140 160
Operating Supply Voltage (V)
Ambient Temperature (èC)
D009
D010
图 9. BRP Threshold vs Supply Voltage
图 10. ICC vs Temperature
(DRV5015A2, DRV5015A3)
(DRV5015A2, DRV5015A3)
6
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7 Detailed Description
7.1 Overview
The DRV5015 is a magnetic sensor with a digital output that latches the most recent pole measured. During
power-up, in the absence of an external magnetic field, the DRV5015A1 and DRV5015A2 default to a low output
state and the DRV5015A3 defaults to a high output state. Applying a south magnetic pole near the top of the
package causes the DRV5015A1 and DRV5015A2 output to drive low, whereas a north magnetic pole causes
this output to drive high. Applying a south magnetic pole near the top of the package causes the DRV5015A3
output to drive high, whereas a north magnetic pole causes this output to drive low. The absence of a magnetic
field causes the output to continue to drive the current state, whether low or high.
The device integrates a Hall effect element, analog signal conditioning, offset cancellation circuits, amplifiers, and
comparators. These features provide stable performance across a wide temperature range and resistance to
mechanical stress.
7.2 Functional Block Diagram
VCC
Voltage
Regulator
0.01 µF
REF
GND
Element Bias
OUT
Offset Cancellation
Amp
Output
Control
Temperature
Compensation
7.3 Feature Description
7.3.1 Magnetic Flux Direction
As shown in 图 11, the DRV5015 is sensitive to the magnetic field component that is perpendicular to the top of
the package.
B
SOT-23
PCB
图 11. Direction of Sensitivity
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Feature Description (接下页)
Magnetic flux that travels from the bottom to the top of the package is considered positive in this document. This
condition exists when a south magnetic pole is near the top of the package. Magnetic flux that travels from the
top to the bottom of the package is considered negative. 图 12 shows the flux direction polarity.
positive B
negative B
N
S
S
N
PCB
PCB
图 12. Flux Direction Polarity
8
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Feature Description (接下页)
7.3.2 Magnetic Response
图 13 shows the device output response to stimulus and hysteresis.
OUT
VCC
BHYS
0V
B
BRP
BOP
north
0 mT
south
DRV5015A1, DRV5015A2
OUT
VCC
BHYS
0V
B
BRP
BOP
north
0 mT
south
DRV5015A3
图 13. Device Output Response to Stimulus
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Feature Description (接下页)
7.3.3 Output Driver
图 14 shows the DRV5015 open-drain output structure. An open-drain output offers flexibility by enabling system
designers to interface to wide-range GPIO termination voltages. C1 represents the input capacitance of the
GPIO. R1 represents the pullup resistor connected to the termination voltage, VPULL-UP. The maximum allowable
value of VPULL_UP is 5.5 V. The value of R1 must be selected after proper considerations among the system
speed and the power dissipation through the pullup resistor.
VPULL_UP
R1
OUT
C1
DRV5015
Output
Control
GND
图 14. Open-Drain Output (Simplified)
7.3.4 Power-On Time
图 15 shows that after the VCC voltage is applied, the DRV5015 measures the magnetic field and sets the output
within the tON time.
VCC
2.5 V
tON
time
Output
Invalid
Valid
time
图 15. tON Definition
10
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Feature Description (接下页)
7.3.5 Hall Element Location
The sensing element inside the device is in the center of both packages when viewed from the top. 图 16 shows
the tolerances and side-view dimensions.
SOT-23 Top View
133 µm
centered
±70 µm
133 µm
SOT-23 Side View
650 µm
±80 µm
图 16. Hall Element Location
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Feature Description (接下页)
7.3.6 Propagation Delay
The DRV5015 samples the Hall element at a nominal sampling interval of every 16.67 µs to detect the presence
of a magnetic north or south pole. At each sampling point, the device takes the average of the current sampled
value and immediately preceding sampled value of the magnetic field. If this average value crosses the BOP or
BRP threshold, the device output changes to the corresponding state as defined by the Overview section.
图 17 shows the DRV5015A1 propagation delay analysis in the proximity of a magnetic south pole. The Hall
element of the DRV5015 experiences an increasing magnetic field as a magnetic south pole approaches near
the device. At time t2, the average magnetic field is (B2 + B1) / 2, which is below the BOP threshold of the device.
At time t3, the actual magnetic field has crossed the BOP threshold. However, the average (B3 + B2) / 2 is still less
than the BOP threshold. As such, the device waits for next sample time, t4, to start the output transition through
the analog signal chain. The propagation delay, td, is measured as the delay from the time the magnetic field
crosses the BOP threshold to the time output transitions.
Magnetic Field
Magnetic
Field Ramp
B6
B5
B4
B3
BOP Threshold
B2
B1
Delay Through
Analog Signal Chain
t5
t6
t1
t2
t3
t4
Time
td
Output
Time
DRV5015A1 Output Transition At Magnetic South Pole
图 17. Propagation Delay
7.4 Device Functional Modes
The DRV5015 has one mode of operation that applies when the are met.
12
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8 Application and Implementation
注
Information in the following applications sections is not part of the TI component
specification, and TI does not warrant its accuracy or completeness. TI’s customers are
responsible for determining suitability of components for their purposes. Customers should
validate and test their design implementation to confirm system functionality.
8.1 Application Information
The DRV5015 is ideal for use in rotary applications for brushless DC (BLDC) motor sensors or incremental rotary
encoding.
For reliable functionality, the magnet must apply a flux density at the sensor greater than the corresponding
maximum BOP or BRP numbers specified in the table. Add additional margin to account for mechanical tolerance,
temperature effects, and magnet variation. Magnets generally produce weaker fields as temperature increases.
8.2 Typical Applications
8.2.1 BLDC Motor Sensors Application
VCC
3
Outputs
GPIOs
VCC
DRV5015
DRV5015
DRV5015
Microcontroller
6 Gate Drivers
& MOSFETs
Motor
PWM
GPIOs
图 18. BLDC Motor System
8.2.1.1 Design Requirements
Use the parameters listed in 表 1 for this design.
表 1. Design Parameters
DESIGN PARAMETER
EXAMPLE VALUE
Number of motor phases
Motor RPM
3
15 kRPM
12
Number of magnet poles on the rotor
Magnetic material
Bonded neodymium
125°C
Maximum temperature inside the motor
Magnetic flux density peaks at the Hall
sensors at maximum temperature
±11 mT
Hall sensor VCC
5 V ± 10%
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8.2.1.2 Detailed Design Procedure
Three-phase brushless DC motors often use three Hall effect latch devices to measure the electrical angle of the
rotor and tell the controller how to drive the three wires. These wires connect to electromagnet windings, which
generate magnetic fields that apply forces to the permanent magnets on the rotor.
Space the three Hall sensors across the printed-circuit board (PCB) so that these sensors are 120 electrical
degrees apart. This configuration creates six 3-bit states with equal time duration for each electrical cycle, which
consists of one north and one south magnetic pole. From the center of the motor axis, the number of degrees to
space each sensor equals 2 / [number of poles] × 120°. In this design example, the first sensor is placed at 0°,
the second sensor is placed 20° rotated, and the third sensor is placed 40° rotated. Alternatively, a 3× degree
offset can be added or subtracted to any sensor, meaning that the third sensor can alternatively be placed at
40° – (3 × 20°) = –20°.
8.2.1.3 Application Curve
U
Phase
V
Voltages
W
Hall 1
DRV5011
Hall 2
Outputs
Hall 3
Electrical Angle
0°
0°
120°
240°
360°
60°
Mechanical Angle
30°
.
图 19. Phase Voltages and Hall Signals for a 3-Phase BLDC Motor
14
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8.2.2 Incremental Rotary Encoding Application
VCC
VCC
DRV5015
VCC
Controller
OUT
GPIO
GPIO
GND
VCC
DRV5015
VCC
OUT
GND
图 20. Incremental Rotary Encoding System
8.2.2.1 Design Requirements
Use the parameters listed in 表 2 for this design.
表 2. Design Parameters
DESIGN PARAMETER
EXAMPLE VALUE
RPM range
45 kRPM
8
Number of magnet poles
Magnetic material
Ferrite
2.5 mm
Air gap above the Hall sensors
Magnetic flux density peaks at the Hall
sensors at maximum temperature
±7 mT
8.2.2.2 Detailed Design Procedure
Incremental encoders are used on knobs, wheels, motors, and flow meters to measure relative rotary movement.
By attaching a ring magnet to the rotating component and placing a DRV5015 nearby, the sensor generates
voltage pulses as the magnet turns. If directional information is also needed (clockwise versus counterclockwise),
a second DRV5015 can be added with a phase offset, and then the order of transitions between the two signals
describes the direction.
Creating this phase offset requires spacing the two sensors apart on the PCB, and an ideal 90° quadrature offset
is attained when the sensors are separated by half the length of each magnet pole, plus any integer number of
pole lengths. 图 20 shows this configuration because the sensors are 1.5 pole lengths apart. One of the sensors
changes its output every 360° / 8 poles / 2 sensors = 22.5° of rotation. For reference, the TIDA-00480 TI Design
Considerations Automotive Hall Sensor Rotary Encoder uses a 66-pole magnet with changes every 2.7°.
The maximum rotational speed that can be measured is limited by the sensor bandwidth. Generally, the
bandwidth must be faster than two times the number of poles per second. In this design example, the maximum
speed is 45000 RPM, which involves 6000 poles per second. The DRV5015 sensing bandwidth is typically
30 kHz, which is five times the pole frequency. In systems where the sensor sampling rate is close to two times
the number of poles per second, most of the samples measure a magnetic field that is significantly lower than the
peak value, because the peaks only occur when the sensor and pole are perfectly aligned. In this case, add
margin by applying a stronger magnetic field that has peaks significantly higher than the maximum BOP
.
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8.2.2.3 Application Curve
Two signals in quadrature provide movement and direction information. 图 21 shows how each 2-bit state has
unique adjacent 2-bit states for clockwise and counterclockwise.
Voltage
Sensor 1
Sensor 2
time
图 21. Quadrature Output (2-Bit)
8.3 What to Do and What Not to Do
The Hall element is sensitive to magnetic fields that are perpendicular to the top of the package; therefore, the
correct magnet orientation must be used for the sensor to detect the field. 图 22 shows correct and incorrect
orientations when using a ring magnet.
CORRECT
INCORRECT
图 22. Correct and Incorrect Magnet Orientations
16
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DRV5015
www.ti.com.cn
ZHCSHJ9A –JUNE 2018–REVISED APRIL 2019
9 Power Supply Recommendations
The DRV5015 is powered from 2.5-V to 5.5-V DC power supplies. A decoupling capacitor close to the device
must be used to provide local energy with minimal inductance. TI recommends using a ceramic capacitor with a
value of at least 0.01 µF.
10 Layout
10.1 Layout Guidelines
Magnetic fields pass through most nonferromagnetic materials with no significant disturbance. Embedding Hall
effect sensors within plastic or aluminum enclosures and sensing magnets on the outside is common practice.
Magnetic fields also easily pass through most PCBs, which makes placing the magnet on the opposite side of
the PCB possible.
10.2 Layout Example
VCC
GND
OUT
图 23. Example Layout
版权 © 2018–2019, Texas Instruments Incorporated
17
DRV5015
ZHCSHJ9A –JUNE 2018–REVISED APRIL 2019
www.ti.com.cn
11 器件和文档支持
11.1 文档支持
11.1.1 相关文档
请参阅如下相关文档：
•
•
《TIDA-00480 TI 设计注意事项 - 汽车霍尔传感器旋转编码器》
《HALL-ADAPTER-EVM》用户指南
11.2 接收文档更新通知
要接收文档更新通知，请导航至 TI.com.cn 上的器件产品文件夹。单击右上角的通知我 进行注册，即可每周接收产
品信息更改摘要。有关更改的详细信息，请查看任何已修订文档中包含的修订历史记录。
11.3 社区资源
下列链接提供到 TI 社区资源的连接。链接的内容由各个分销商“按照原样”提供。这些内容并不构成 TI 技术规范，
并且不一定反映 TI 的观点；请参阅 TI 的 《使用条款》。
TI E2E™ Online Community TI's Engineer-to-Engineer (E2E) Community. Created to foster collaboration
among engineers. At e2e.ti.com, you can ask questions, share knowledge, explore ideas and help
solve problems with fellow engineers.
Design Support TI's Design Support Quickly find helpful E2E forums along with design support tools and
contact information for technical support.
11.4 商标
E2E is a trademark of Texas Instruments.
All other trademarks are the property of their respective owners.
11.5 静电放电警告
ESD 可能会损坏该集成电路。德州仪器 (TI) 建议通过适当的预防措施处理所有集成电路。如果不遵守正确的处理措施和安装程序 , 可
能会损坏集成电路。
ESD 的损坏小至导致微小的性能降级 , 大至整个器件故障。 精密的集成电路可能更容易受到损坏 , 这是因为非常细微的参数更改都可
能会导致器件与其发布的规格不相符。
11.6 术语表
SLYZ022 — TI 术语表。
这份术语表列出并解释术语、缩写和定义。
12 机械、封装和可订购信息
以下页面包含机械、封装和可订购信息。这些信息是指定器件的最新可用数据。数据如有变更，恕不另行通知，且
不会对此文档进行修订。如需获取此产品说明书的浏览器版本，请查阅左侧的导航栏。
18
版权 © 2018–2019, Texas Instruments Incorporated
PACKAGE OPTION ADDENDUM
www.ti.com
10-Dec-2020
PACKAGING INFORMATION
Orderable Device
Status Package Type Package Pins Package
Eco Plan
Lead finish/
Ball material
MSL Peak Temp
Op Temp (°C)
Device Marking
Samples
Drawing
Qty
(1)
(2)
(3)
(4/5)
(6)
DRV5015A1QDBZR
DRV5015A1QDBZT
DRV5015A2QDBZR
DRV5015A2QDBZT
DRV5015A3QDBZR
DRV5015A3QDBZT
ACTIVE
ACTIVE
ACTIVE
ACTIVE
ACTIVE
ACTIVE
SOT-23
SOT-23
SOT-23
SOT-23
SOT-23
SOT-23
DBZ
DBZ
DBZ
DBZ
DBZ
DBZ
3
3
3
3
3
3
3000 RoHS & Green
250 RoHS & Green
3000 RoHS & Green
250 RoHS & Green
3000 RoHS & Green
250 RoHS & Green
SN
Level-1-260C-UNLIM
Level-1-260C-UNLIM
Level-1-260C-UNLIM
Level-1-260C-UNLIM
Level-1-260C-UNLIM
Level-1-260C-UNLIM
-40 to 125
-40 to 125
-40 to 125
-40 to 125
-40 to 125
-40 to 125
15A1
15A1
15A2
15A2
15A3
15A3
SN
SN
SN
SN
SN
(1) The marketing status values are defined as follows:
ACTIVE: Product device recommended for new designs.
LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect.
NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design.
PREVIEW: Device has been announced but is not in production. Samples may or may not be available.
OBSOLETE: TI has discontinued the production of the device.
(2) RoHS: TI defines "RoHS" to mean semiconductor products that are compliant with the current EU RoHS requirements for all 10 RoHS substances, including the requirement that RoHS substance
do not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, "RoHS" products are suitable for use in specified lead-free processes. TI may
reference these types of products as "Pb-Free".
RoHS Exempt: TI defines "RoHS Exempt" to mean products that contain lead but are compliant with EU RoHS pursuant to a specific EU RoHS exemption.
Green: TI defines "Green" to mean the content of Chlorine (Cl) and Bromine (Br) based flame retardants meet JS709B low halogen requirements of <=1000ppm threshold. Antimony trioxide based
flame retardants must also meet the <=1000ppm threshold requirement.
(3) MSL, Peak Temp. - The Moisture Sensitivity Level rating according to the JEDEC industry standard classifications, and peak solder temperature.
(4) There may be additional marking, which relates to the logo, the lot trace code information, or the environmental category on the device.
(5) Multiple Device Markings will be inside parentheses. Only one Device Marking contained in parentheses and separated by a "~" will appear on a device. If a line is indented then it is a continuation
of the previous line and the two combined represent the entire Device Marking for that device.
(6)
Lead finish/Ball material - Orderable Devices may have multiple material finish options. Finish options are separated by a vertical ruled line. Lead finish/Ball material values may wrap to two
lines if the finish value exceeds the maximum column width.
Addendum-Page 1
PACKAGE OPTION ADDENDUM
www.ti.com
10-Dec-2020
Important Information and Disclaimer:The information provided on this page represents TI's knowledge and belief as of the date that it is provided. TI bases its knowledge and belief on information
provided by third parties, and makes no representation or warranty as to the accuracy of such information. Efforts are underway to better integrate information from third parties. TI has taken and
continues to take reasonable steps to provide representative and accurate information but may not have conducted destructive testing or chemical analysis on incoming materials and chemicals.
TI and TI suppliers consider certain information to be proprietary, and thus CAS numbers and other limited information may not be available for release.
In no event shall TI's liability arising out of such information exceed the total purchase price of the TI part(s) at issue in this document sold by TI to Customer on an annual basis.
Addendum-Page 2
PACKAGE MATERIALS INFORMATION
www.ti.com
24-Apr-2020
TAPE AND REEL INFORMATION
*All dimensions are nominal
Device
Package Package Pins
Type Drawing
SPQ
Reel
Reel
A0
B0
K0
P1
W
Pin1
Diameter Width (mm) (mm) (mm) (mm) (mm) Quadrant
(mm) W1 (mm)
DRV5015A1QDBZR
DRV5015A1QDBZT
DRV5015A2QDBZR
DRV5015A2QDBZT
DRV5015A3QDBZR
DRV5015A3QDBZT
SOT-23
SOT-23
SOT-23
SOT-23
SOT-23
SOT-23
DBZ
DBZ
DBZ
DBZ
DBZ
DBZ
3
3
3
3
3
3
3000
250
178.0
178.0
178.0
178.0
178.0
178.0
9.0
9.0
9.0
9.0
9.0
9.0
3.15
3.15
3.15
3.15
3.15
3.15
2.77
2.77
2.77
2.77
2.77
2.77
1.22
1.22
1.22
1.22
1.22
1.22
4.0
4.0
4.0
4.0
4.0
4.0
8.0
8.0
8.0
8.0
8.0
8.0
Q3
Q3
Q3
Q3
Q3
Q3
3000
250
3000
250
Pack Materials-Page 1
PACKAGE MATERIALS INFORMATION
www.ti.com
24-Apr-2020
*All dimensions are nominal
Device
Package Type Package Drawing Pins
SPQ
Length (mm) Width (mm) Height (mm)
DRV5015A1QDBZR
DRV5015A1QDBZT
DRV5015A2QDBZR
DRV5015A2QDBZT
DRV5015A3QDBZR
DRV5015A3QDBZT
SOT-23
SOT-23
SOT-23
SOT-23
SOT-23
SOT-23
DBZ
DBZ
DBZ
DBZ
DBZ
DBZ
3
3
3
3
3
3
3000
250
180.0
180.0
180.0
180.0
180.0
180.0
180.0
180.0
180.0
180.0
180.0
180.0
18.0
18.0
18.0
18.0
18.0
18.0
3000
250
3000
250
Pack Materials-Page 2
PACKAGE OUTLINE
DBZ0003A
SOT-23 - 1.12 mm max height
S
C
A
L
E
4
.
0
0
0
SMALL OUTLINE TRANSISTOR
C
2.64
2.10
1.12 MAX
1.4
1.2
B
A
0.1 C
PIN 1
INDEX AREA
1
0.95
(0.125)
3.04
2.80
1.9
3
(0.15)
NOTE 4
2
0.5
0.3
3X
0.10
0.01
(0.95)
TYP
0.2
C A B
0.25
GAGE PLANE
0.20
0.08
TYP
0.6
0.2
TYP
SEATING PLANE
0 -8 TYP
4214838/D 03/2023
NOTES:
1. All linear dimensions are in millimeters. Any dimensions in parenthesis are for reference only. Dimensioning and tolerancing
per ASME Y14.5M.
2. This drawing is subject to change without notice.
3. Reference JEDEC registration TO-236, except minimum foot length.
4. Support pin may differ or may not be present.
www.ti.com
EXAMPLE BOARD LAYOUT
DBZ0003A
SOT-23 - 1.12 mm max height
SMALL OUTLINE TRANSISTOR
PKG
3X (1.3)
1
3X (0.6)
SYMM
3
2X (0.95)
2
(R0.05) TYP
(2.1)
LAND PATTERN EXAMPLE
SCALE:15X
SOLDER MASK
OPENING
SOLDER MASK
OPENING
METAL UNDER
SOLDER MASK
METAL
0.07 MIN
ALL AROUND
0.07 MAX
ALL AROUND
NON SOLDER MASK
DEFINED
SOLDER MASK
DEFINED
(PREFERRED)
SOLDER MASK DETAILS
4214838/D 03/2023
NOTES: (continued)
4. Publication IPC-7351 may have alternate designs.
5. Solder mask tolerances between and around signal pads can vary based on board fabrication site.
www.ti.com
EXAMPLE STENCIL DESIGN
DBZ0003A
SOT-23 - 1.12 mm max height
SMALL OUTLINE TRANSISTOR
PKG
3X (1.3)
1
3X (0.6)
SYMM
3
2X(0.95)
2
(R0.05) TYP
(2.1)
SOLDER PASTE EXAMPLE
BASED ON 0.125 THICK STENCIL
SCALE:15X
4214838/D 03/2023
NOTES: (continued)
6. Laser cutting apertures with trapezoidal walls and rounded corners may offer better paste release. IPC-7525 may have alternate
design recommendations.
7. Board assembly site may have different recommendations for stencil design.
www.ti.com
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