DS26C32AT [TI]
CMOS 四路差动线路接收器;型号: | DS26C32AT |
厂家: | TEXAS INSTRUMENTS |
描述: | CMOS 四路差动线路接收器 驱动 线路驱动器或接收器 驱动程序和接口 |
文件: | 总16页 (文件大小:958K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
DS26C32AM, DS26C32AT
www.ti.com
SNLS382C –JUNE 1998–REVISED APRIL 2013
DS26C32AT/DS26C32AM Quad Differential Line Receiver
Check for Samples: DS26C32AM, DS26C32AT
1
FEATURES
DESCRIPTION
The DS26C32A is a quad differential line receiver
2
•
•
CMOS Design for Low Power
designed to meet the RS-422, RS-423, and Federal
Standards 1020 and 1030 for balanced and
unbalanced digital data transmission, while retaining
the low power characteristics of CMOS.
±0.2V Sensitivity over Input Common Mode
Voltage Range
•
•
•
•
Typical Propagation Delays: 19 ns
Typical Input hysteresis: 60 mV
The DS26C32A has an input sensitivity of 200 mV
over the common mode input voltage range of ±7V.
The DS26C32A features internal pull-up and pull-
down resistors which prevent output oscillation on
unused channels.
Inputs Won't Load Line When VCC = 0V
Meets the Requirements of EIA Standard RS-
422
•
TRI-STATE Outputs for Connection to System
Buses
The DS26C32A provides an enable and disable
function common to all four receivers. It also features
TRI-STATE outputs with 6 mA source and sink
capability. This product is pin compatible with the
DS26LS32A and the AM26LS32.
•
•
Available in Surface Mount
Mil-Std-883C Compliant
Logic Diagram
1
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of
Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.
2
All trademarks are the property of their respective owners.
PRODUCTION DATA information is current as of publication date.
Products conform to specifications per the terms of the Texas
Instruments standard warranty. Production processing does not
necessarily include testing of all parameters.
Copyright © 1998–2013, Texas Instruments Incorporated
DS26C32AM, DS26C32AT
SNLS382C –JUNE 1998–REVISED APRIL 2013
www.ti.com
Connection Diagrams
Top View
For Complete Military Product Specifications, refer to the appropriate SMD or MDS.
Figure 1. PDIP Package
See Package Number D0016A or NFG0016E
See Package Number NAJ0020A, NFE0016A or NAD0016A
Top View
Figure 2. 20-Lead Ceramic Leadless Chip Carrier
LCCC Package
These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam
during storage or handling to prevent electrostatic damage to the MOS gates.
2
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Copyright © 1998–2013, Texas Instruments Incorporated
Product Folder Links: DS26C32AM DS26C32AT
DS26C32AM, DS26C32AT
www.ti.com
SNLS382C –JUNE 1998–REVISED APRIL 2013
Absolute Maximum Ratings(1)(2)(3)
Supply Voltage (VCC
Common Mode Range (VCM
Differential Input Voltage (V DIFF
Enable Input Voltage (V IN
Storage Temperature Range (T STG
)
7V
)
±14V
±14V
)
)
7V
)
−65°C to +150°C
260°C
Lead Temperature (Soldering 4 sec.)
Maximum Power Dissipation at 25°C
Ceramic NFE0016A Package
Plastic NFG0016E Package
SOIC D0016A Package
(4)
2308 mW
1645 mW
1190 mW
2108 mW
1215 mW
±25 mA
Ceramic NAJ0020A Package
Ceramic NAD0016A Package
Maximum Current Per Output
This device does not meet 2000V ESD rating.(5)
(1) Absolute Maximum Ratings are those values beyond which the safety of the device cannot be ensured. They are not meant to imply that
the device should be operated at these limits. The table of “Electrical Characteristics” provides conditions for actual device operation.
(2) Unless otherwise specified, all voltages are referenced to ground.
(3) If Military/Aerospace specified devices are required, please contact the TI Sales Office/Distributors for availability and specifications
(4) Ratings apply to ambient temperature at 25°C. Above this temperature derate N Package 13.16 mW/°C, J Package 15.38 mW/°C, M
Package 9.52 mW/°C, E Package 12.04 mW/°C, and W package 6.94 mW/°C.
(5) ESD Rating: HBM (1.5 kΩ, 100 pF) Inputs ≥2000V All other pins ≥1000V EIAJ (0Ω, 200 pF) ≥350V
Operating Conditions
Min
Max
Units
Supply Voltage (VCC
)
4.50
5.50
V
Operating Temperature Range (TA)
DS26C32AT
−40
−55
+85
+125
500
°C
°C
ns
DS26C32AM
Enable Input Rise or Fall Times
DC Electrical Characteristics
VCC = 5V ±10% (unless otherwise specified)(1)
Parameter
Test Conditions
Min
Typ
Max
Units
VTH
RIN
Minimum Differential
Input Voltage
V OUT = VOH or VOL
−7V < VCM < +7V
−200
35
+200
mV
Input Resistance
VIN = −7V, +7V
(Other Input = GND)
DS26C32AT
DS26C32AM
DS26C32AT
DS26C32AM
DS26C32AT
DS26C32AM
5.0
4.5
6.8
6.8
10
kΩ
kΩ
mA
mA
mA
mA
V
11
IIN
Input Current
VIN = +10V,
Other Input = GND
+1.1
+1.1
−2.0
−2.0
4.2
+1.5
+1.8
−2.5
−2.7
VIN = −10V,
Other Input = GND
VOH
Minimum High Level
Output Voltage
V CC = Min, VDIFF = +1V
I OUT = −6.0 mA
3.8
2.0
VOL
Maximum Low Level
Output Voltage
V CC = Max, VDIFF = −1V
I OUT = 6.0 mA
0.2
0.3
0.8
V
VIH
VIL
Minimum Enable High
Input Level Voltage
V
V
Maximum Enable Low
Input Level Voltage
(1) Absolute Maximum Ratings are those values beyond which the safety of the device cannot be ensured. They are not meant to imply that
the device should be operated at these limits. The table of “Electrical Characteristics” provides conditions for actual device operation.
Copyright © 1998–2013, Texas Instruments Incorporated
Submit Documentation Feedback
3
Product Folder Links: DS26C32AM DS26C32AT
DS26C32AM, DS26C32AT
SNLS382C –JUNE 1998–REVISED APRIL 2013
www.ti.com
DC Electrical Characteristics (continued)
VCC = 5V ±10% (unless otherwise specified)(1)
Parameter
Test Conditions
Min
Typ
Max
Units
IOZ
Maximum TRI-STATE
Output Leakage Current
V OUT = VCC or GND,
ENABLE = VIL,
ENABLE = VIH
±0.5
±5.0
μA
II
Maximum Enable Input
Current
V IN = VCC or GND
±1.0
μA
ICC
Quiescent Power
Supply Current
VCC = Max,
VDIF = +1V
V CM = 0V
DS26C32AT
DS26C32AM
16
16
60
23
25
mA
mA
mV
VHYST
Input Hysteresis
AC Electrical Characteristics
(1)
VCC = 5V ±10%
Max
DS26C32AT DS26C32AM
Parameter
Test Conditions
Min
Typ
Units
tPLH
tPHL
,
Propagation Delay
Input to Output
CL = 50 pF
VDIFF = 2.5V
VCM = 0V
10
19
30
35
ns
tRISE
tFALL
,
Output Rise and
Fall Times
CL = 50 pF
VDIFF = 2.5V
VCM = 0V
4
9
9
ns
ns
ns
tPLZ
,
Propagation Delay
ENABLE to Output
CL = 50 pF
RL = 1000Ω
VDIFF = 2.5V
CL = 50 pF
RL = 1000Ω
VDIFF = 2.5V
13
13
22
23
29
29
tPHZ
tPZL
,
Propagation Delay
ENABLE to Output
tPZH
(1) Unless otherwise specified, Min/Max limits apply over recommended operating conditions. All typicals are given for VCC = 5V and TA
25°C.
=
Comparison Table of Switching Characteristics into “LS-Type” Load
(1)
(Figure 6, Figure 7, and Figure 8)
DS26C32A
DS26LS32A
Parameter
Test Conditions
Units
Typ
17
19
13
12
13
13
Typ
23
23
15
20
14
15
tPLH
tPHL
tLZ
Input to Output
CL = 15 pF
CL = 5 pF
CL = 15 pF
ns
ns
ns
ns
ns
ns
ENABLE to Output
ENABLE to Output
tHZ
tZL
tZH
(1) This table is provided for comparison purposes only. The values in this table for the DS26C32A reflect the performance of the device,
but are not tested.
4
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Product Folder Links: DS26C32AM DS26C32AT
DS26C32AM, DS26C32AT
www.ti.com
SNLS382C –JUNE 1998–REVISED APRIL 2013
TEST AND SWITCHING WAVEFORMS
Figure 3. Propagation Delay
CL includes load and test jig capacitance.
S1 = VCC for t PZL, and tPLZ measurements.
S1 = Gnd for tPZH and tPHZ measurements.
Figure 4. Test Circuit for TRI-STATE Output Tests
Figure 5. TRI-STATE Output Enable and Disable Waveforms
AC Test Circuit and Switching Time Waveforms
Figure 6. Load Test Circuit for TRI-STATE Outputs for “LS-Type” Load
Copyright © 1998–2013, Texas Instruments Incorporated
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Product Folder Links: DS26C32AM DS26C32AT
DS26C32AM, DS26C32AT
SNLS382C –JUNE 1998–REVISED APRIL 2013
www.ti.com
Figure 7. Propagation Delay for “LS-Type” Load
(1) Diagram shown for ENABLE low.
(2) S1 and S2 of load circuit are closed except where shown.
(3) Pulse generator for all pulses: Rate ≤ 1.0 MHz; ZO = 50Ω; tr ≤ 15 ns; t f ≤ 6.0 ns.
Figure 8. Enable and Disable Times for “LS-Type” Load
Truth Table(1)
ENABLE
ENABLE
Input
Output
L
H
X
Z
H
L
All Other
Combinations of
Enable Inputs
V
ID ≥ V TH (Max)
V
ID ≤ V TH (Min)
Open
H
(1) Z = TRI-STATE
TYPICAL APPLICATIONS
Figure 9. Two-Wire Balanced Systems, RS-422
6
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Copyright © 1998–2013, Texas Instruments Incorporated
Product Folder Links: DS26C32AM DS26C32AT
DS26C32AM, DS26C32AT
www.ti.com
SNLS382C –JUNE 1998–REVISED APRIL 2013
Typical Performance Characteristics
Differential Propagation Delay
vs Temperature
Differential Propagation Delay
vs Power Supply Voltage
Figure 10.
Figure 11.
Differential Skew
vs
Differential Skew vs
Temperature
Power
Supply Voltage
Figure 12.
Figure 13.
Output High Voltage vs
Output High Current
Output High Voltage vs
Output High Current
Figure 14.
Figure 15.
Copyright © 1998–2013, Texas Instruments Incorporated
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Product Folder Links: DS26C32AM DS26C32AT
DS26C32AM, DS26C32AT
SNLS382C –JUNE 1998–REVISED APRIL 2013
www.ti.com
Typical Performance Characteristics (continued)
Output Low Voltage vs
Output Low Current
Output Low Voltage vs
Output Low Current
Figure 16.
Figure 17.
Input Current
vs
Input Resistance vs
Input Voltage
Power
Supply Voltage
Figure 18.
Figure 19.
Hysteresis & Differential
Transition Voltage vs
Temperature
Hysteresis & Differential
Transition Voltage vs
Power Supply Voltage
Figure 20.
Figure 21.
8
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Copyright © 1998–2013, Texas Instruments Incorporated
Product Folder Links: DS26C32AM DS26C32AT
DS26C32AM, DS26C32AT
www.ti.com
SNLS382C –JUNE 1998–REVISED APRIL 2013
Typical Performance Characteristics (continued)
Supply Current vs
Temperature
Disabled Supply Current vs
Power Supply Voltage
Figure 22.
Figure 23.
Supply Current vs
Data Rate
Figure 24.
Copyright © 1998–2013, Texas Instruments Incorporated
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9
Product Folder Links: DS26C32AM DS26C32AT
DS26C32AM, DS26C32AT
SNLS382C –JUNE 1998–REVISED APRIL 2013
www.ti.com
REVISION HISTORY
Changes from Revision B (April 2013) to Revision C
Page
•
Changed layout of National Data Sheet to TI format ............................................................................................................ 9
10
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Copyright © 1998–2013, Texas Instruments Incorporated
Product Folder Links: DS26C32AM DS26C32AT
PACKAGE OPTION ADDENDUM
www.ti.com
15-Apr-2013
PACKAGING INFORMATION
Orderable Device
Status Package Type Package Pins Package
Eco Plan Lead/Ball Finish
MSL Peak Temp
Op Temp (°C)
Top-Side Markings
Samples
Drawing
Qty
(1)
(2)
(3)
(4)
DS26C32ATM
ACTIVE
SOIC
SOIC
D
16
16
48
TBD
Call TI
CU SN
Call TI
-40 to 85
-40 to 85
DS26C32ATM
DS26C32ATM/NOPB
ACTIVE
D
48
Green (RoHS
& no Sb/Br)
Level-1-260C-UNLIM
DS26C32ATM
DS26C32ATMX
ACTIVE
ACTIVE
SOIC
SOIC
D
D
16
16
2500
2500
TBD
Call TI
CU SN
Call TI
-40 to 85
-40 to 85
DS26C32ATM
DS26C32ATM
DS26C32ATMX/NOPB
Green (RoHS
& no Sb/Br)
Level-1-260C-UNLIM
(1) The marketing status values are defined as follows:
ACTIVE: Product device recommended for new designs.
LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect.
NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design.
PREVIEW: Device has been announced but is not in production. Samples may or may not be available.
OBSOLETE: TI has discontinued the production of the device.
(2) Eco Plan - The planned eco-friendly classification: Pb-Free (RoHS), Pb-Free (RoHS Exempt), or Green (RoHS & no Sb/Br) - please check http://www.ti.com/productcontent for the latest availability
information and additional product content details.
TBD: The Pb-Free/Green conversion plan has not been defined.
Pb-Free (RoHS): TI's terms "Lead-Free" or "Pb-Free" mean semiconductor products that are compatible with the current RoHS requirements for all 6 substances, including the requirement that
lead not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, TI Pb-Free products are suitable for use in specified lead-free processes.
Pb-Free (RoHS Exempt): This component has a RoHS exemption for either 1) lead-based flip-chip solder bumps used between the die and package, or 2) lead-based die adhesive used between
the die and leadframe. The component is otherwise considered Pb-Free (RoHS compatible) as defined above.
Green (RoHS & no Sb/Br): TI defines "Green" to mean Pb-Free (RoHS compatible), and free of Bromine (Br) and Antimony (Sb) based flame retardants (Br or Sb do not exceed 0.1% by weight
in homogeneous material)
(3) MSL, Peak Temp. -- The Moisture Sensitivity Level rating according to the JEDEC industry standard classifications, and peak solder temperature.
(4)
Multiple Top-Side Markings will be inside parentheses. Only one Top-Side Marking contained in parentheses and separated by a "~" will appear on a device. If a line is indented then it is a
continuation of the previous line and the two combined represent the entire Top-Side Marking for that device.
Important Information and Disclaimer:The information provided on this page represents TI's knowledge and belief as of the date that it is provided. TI bases its knowledge and belief on information
provided by third parties, and makes no representation or warranty as to the accuracy of such information. Efforts are underway to better integrate information from third parties. TI has taken and
continues to take reasonable steps to provide representative and accurate information but may not have conducted destructive testing or chemical analysis on incoming materials and chemicals.
TI and TI suppliers consider certain information to be proprietary, and thus CAS numbers and other limited information may not be available for release.
In no event shall TI's liability arising out of such information exceed the total purchase price of the TI part(s) at issue in this document sold by TI to Customer on an annual basis.
Addendum-Page 1
PACKAGE OPTION ADDENDUM
www.ti.com
15-Apr-2013
Addendum-Page 2
PACKAGE MATERIALS INFORMATION
www.ti.com
24-Apr-2013
TAPE AND REEL INFORMATION
*All dimensions are nominal
Device
Package Package Pins
Type Drawing
SPQ
Reel
Reel
A0
B0
K0
P1
W
Pin1
Diameter Width (mm) (mm) (mm) (mm) (mm) Quadrant
(mm) W1 (mm)
DS26C32ATMX
SOIC
SOIC
D
D
16
16
2500
2500
330.0
330.0
16.4
16.4
6.5
6.5
10.3
10.3
2.3
2.3
8.0
8.0
16.0
16.0
Q1
Q1
DS26C32ATMX/NOPB
Pack Materials-Page 1
PACKAGE MATERIALS INFORMATION
www.ti.com
24-Apr-2013
*All dimensions are nominal
Device
Package Type Package Drawing Pins
SPQ
Length (mm) Width (mm) Height (mm)
DS26C32ATMX
SOIC
SOIC
D
D
16
16
2500
2500
367.0
367.0
367.0
367.0
35.0
35.0
DS26C32ATMX/NOPB
Pack Materials-Page 2
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