DS26C32AT [TI]

CMOS 四路差动线路接收器;
DS26C32AT
型号: DS26C32AT
厂家: TEXAS INSTRUMENTS    TEXAS INSTRUMENTS
描述:

CMOS 四路差动线路接收器

驱动 线路驱动器或接收器 驱动程序和接口
文件: 总16页 (文件大小:958K)
中文:  中文翻译
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DS26C32AM, DS26C32AT  
www.ti.com  
SNLS382C JUNE 1998REVISED APRIL 2013  
DS26C32AT/DS26C32AM Quad Differential Line Receiver  
Check for Samples: DS26C32AM, DS26C32AT  
1
FEATURES  
DESCRIPTION  
The DS26C32A is a quad differential line receiver  
2
CMOS Design for Low Power  
designed to meet the RS-422, RS-423, and Federal  
Standards 1020 and 1030 for balanced and  
unbalanced digital data transmission, while retaining  
the low power characteristics of CMOS.  
±0.2V Sensitivity over Input Common Mode  
Voltage Range  
Typical Propagation Delays: 19 ns  
Typical Input hysteresis: 60 mV  
The DS26C32A has an input sensitivity of 200 mV  
over the common mode input voltage range of ±7V.  
The DS26C32A features internal pull-up and pull-  
down resistors which prevent output oscillation on  
unused channels.  
Inputs Won't Load Line When VCC = 0V  
Meets the Requirements of EIA Standard RS-  
422  
TRI-STATE Outputs for Connection to System  
Buses  
The DS26C32A provides an enable and disable  
function common to all four receivers. It also features  
TRI-STATE outputs with 6 mA source and sink  
capability. This product is pin compatible with the  
DS26LS32A and the AM26LS32.  
Available in Surface Mount  
Mil-Std-883C Compliant  
Logic Diagram  
1
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of  
Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.  
2
All trademarks are the property of their respective owners.  
PRODUCTION DATA information is current as of publication date.  
Products conform to specifications per the terms of the Texas  
Instruments standard warranty. Production processing does not  
necessarily include testing of all parameters.  
Copyright © 1998–2013, Texas Instruments Incorporated  
DS26C32AM, DS26C32AT  
SNLS382C JUNE 1998REVISED APRIL 2013  
www.ti.com  
Connection Diagrams  
Top View  
For Complete Military Product Specifications, refer to the appropriate SMD or MDS.  
Figure 1. PDIP Package  
See Package Number D0016A or NFG0016E  
See Package Number NAJ0020A, NFE0016A or NAD0016A  
Top View  
Figure 2. 20-Lead Ceramic Leadless Chip Carrier  
LCCC Package  
These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam  
during storage or handling to prevent electrostatic damage to the MOS gates.  
2
Submit Documentation Feedback  
Copyright © 1998–2013, Texas Instruments Incorporated  
Product Folder Links: DS26C32AM DS26C32AT  
DS26C32AM, DS26C32AT  
www.ti.com  
SNLS382C JUNE 1998REVISED APRIL 2013  
Absolute Maximum Ratings(1)(2)(3)  
Supply Voltage (VCC  
Common Mode Range (VCM  
Differential Input Voltage (V DIFF  
Enable Input Voltage (V IN  
Storage Temperature Range (T STG  
)
7V  
)
±14V  
±14V  
)
)
7V  
)
65°C to +150°C  
260°C  
Lead Temperature (Soldering 4 sec.)  
Maximum Power Dissipation at 25°C  
Ceramic NFE0016A Package  
Plastic NFG0016E Package  
SOIC D0016A Package  
(4)  
2308 mW  
1645 mW  
1190 mW  
2108 mW  
1215 mW  
±25 mA  
Ceramic NAJ0020A Package  
Ceramic NAD0016A Package  
Maximum Current Per Output  
This device does not meet 2000V ESD rating.(5)  
(1) Absolute Maximum Ratings are those values beyond which the safety of the device cannot be ensured. They are not meant to imply that  
the device should be operated at these limits. The table of “Electrical Characteristics” provides conditions for actual device operation.  
(2) Unless otherwise specified, all voltages are referenced to ground.  
(3) If Military/Aerospace specified devices are required, please contact the TI Sales Office/Distributors for availability and specifications  
(4) Ratings apply to ambient temperature at 25°C. Above this temperature derate N Package 13.16 mW/°C, J Package 15.38 mW/°C, M  
Package 9.52 mW/°C, E Package 12.04 mW/°C, and W package 6.94 mW/°C.  
(5) ESD Rating: HBM (1.5 kΩ, 100 pF) Inputs 2000V All other pins 1000V EIAJ (0Ω, 200 pF) 350V  
Operating Conditions  
Min  
Max  
Units  
Supply Voltage (VCC  
)
4.50  
5.50  
V
Operating Temperature Range (TA)  
DS26C32AT  
40  
55  
+85  
+125  
500  
°C  
°C  
ns  
DS26C32AM  
Enable Input Rise or Fall Times  
DC Electrical Characteristics  
VCC = 5V ±10% (unless otherwise specified)(1)  
Parameter  
Test Conditions  
Min  
Typ  
Max  
Units  
VTH  
RIN  
Minimum Differential  
Input Voltage  
V OUT = VOH or VOL  
7V < VCM < +7V  
200  
35  
+200  
mV  
Input Resistance  
VIN = 7V, +7V  
(Other Input = GND)  
DS26C32AT  
DS26C32AM  
DS26C32AT  
DS26C32AM  
DS26C32AT  
DS26C32AM  
5.0  
4.5  
6.8  
6.8  
10  
kΩ  
kΩ  
mA  
mA  
mA  
mA  
V
11  
IIN  
Input Current  
VIN = +10V,  
Other Input = GND  
+1.1  
+1.1  
2.0  
2.0  
4.2  
+1.5  
+1.8  
2.5  
2.7  
VIN = 10V,  
Other Input = GND  
VOH  
Minimum High Level  
Output Voltage  
V CC = Min, VDIFF = +1V  
I OUT = 6.0 mA  
3.8  
2.0  
VOL  
Maximum Low Level  
Output Voltage  
V CC = Max, VDIFF = 1V  
I OUT = 6.0 mA  
0.2  
0.3  
0.8  
V
VIH  
VIL  
Minimum Enable High  
Input Level Voltage  
V
V
Maximum Enable Low  
Input Level Voltage  
(1) Absolute Maximum Ratings are those values beyond which the safety of the device cannot be ensured. They are not meant to imply that  
the device should be operated at these limits. The table of “Electrical Characteristics” provides conditions for actual device operation.  
Copyright © 1998–2013, Texas Instruments Incorporated  
Submit Documentation Feedback  
3
Product Folder Links: DS26C32AM DS26C32AT  
DS26C32AM, DS26C32AT  
SNLS382C JUNE 1998REVISED APRIL 2013  
www.ti.com  
DC Electrical Characteristics (continued)  
VCC = 5V ±10% (unless otherwise specified)(1)  
Parameter  
Test Conditions  
Min  
Typ  
Max  
Units  
IOZ  
Maximum TRI-STATE  
Output Leakage Current  
V OUT = VCC or GND,  
ENABLE = VIL,  
ENABLE = VIH  
±0.5  
±5.0  
μA  
II  
Maximum Enable Input  
Current  
V IN = VCC or GND  
±1.0  
μA  
ICC  
Quiescent Power  
Supply Current  
VCC = Max,  
VDIF = +1V  
V CM = 0V  
DS26C32AT  
DS26C32AM  
16  
16  
60  
23  
25  
mA  
mA  
mV  
VHYST  
Input Hysteresis  
AC Electrical Characteristics  
(1)  
VCC = 5V ±10%  
Max  
DS26C32AT DS26C32AM  
Parameter  
Test Conditions  
Min  
Typ  
Units  
tPLH  
tPHL  
,
Propagation Delay  
Input to Output  
CL = 50 pF  
VDIFF = 2.5V  
VCM = 0V  
10  
19  
30  
35  
ns  
tRISE  
tFALL  
,
Output Rise and  
Fall Times  
CL = 50 pF  
VDIFF = 2.5V  
VCM = 0V  
4
9
9
ns  
ns  
ns  
tPLZ  
,
Propagation Delay  
ENABLE to Output  
CL = 50 pF  
RL = 1000Ω  
VDIFF = 2.5V  
CL = 50 pF  
RL = 1000Ω  
VDIFF = 2.5V  
13  
13  
22  
23  
29  
29  
tPHZ  
tPZL  
,
Propagation Delay  
ENABLE to Output  
tPZH  
(1) Unless otherwise specified, Min/Max limits apply over recommended operating conditions. All typicals are given for VCC = 5V and TA  
25°C.  
=
Comparison Table of Switching Characteristics into “LS-Type” Load  
(1)  
(Figure 6, Figure 7, and Figure 8)  
DS26C32A  
DS26LS32A  
Parameter  
Test Conditions  
Units  
Typ  
17  
19  
13  
12  
13  
13  
Typ  
23  
23  
15  
20  
14  
15  
tPLH  
tPHL  
tLZ  
Input to Output  
CL = 15 pF  
CL = 5 pF  
CL = 15 pF  
ns  
ns  
ns  
ns  
ns  
ns  
ENABLE to Output  
ENABLE to Output  
tHZ  
tZL  
tZH  
(1) This table is provided for comparison purposes only. The values in this table for the DS26C32A reflect the performance of the device,  
but are not tested.  
4
Submit Documentation Feedback  
Copyright © 1998–2013, Texas Instruments Incorporated  
Product Folder Links: DS26C32AM DS26C32AT  
 
DS26C32AM, DS26C32AT  
www.ti.com  
SNLS382C JUNE 1998REVISED APRIL 2013  
TEST AND SWITCHING WAVEFORMS  
Figure 3. Propagation Delay  
CL includes load and test jig capacitance.  
S1 = VCC for t PZL, and tPLZ measurements.  
S1 = Gnd for tPZH and tPHZ measurements.  
Figure 4. Test Circuit for TRI-STATE Output Tests  
Figure 5. TRI-STATE Output Enable and Disable Waveforms  
AC Test Circuit and Switching Time Waveforms  
Figure 6. Load Test Circuit for TRI-STATE Outputs for “LS-Type” Load  
Copyright © 1998–2013, Texas Instruments Incorporated  
Submit Documentation Feedback  
5
Product Folder Links: DS26C32AM DS26C32AT  
DS26C32AM, DS26C32AT  
SNLS382C JUNE 1998REVISED APRIL 2013  
www.ti.com  
Figure 7. Propagation Delay for “LS-Type” Load  
(1) Diagram shown for ENABLE low.  
(2) S1 and S2 of load circuit are closed except where shown.  
(3) Pulse generator for all pulses: Rate 1.0 MHz; ZO = 50Ω; tr 15 ns; t f 6.0 ns.  
Figure 8. Enable and Disable Times for “LS-Type” Load  
Truth Table(1)  
ENABLE  
ENABLE  
Input  
Output  
L
H
X
Z
H
L
All Other  
Combinations of  
Enable Inputs  
V
ID V TH (Max)  
V
ID V TH (Min)  
Open  
H
(1) Z = TRI-STATE  
TYPICAL APPLICATIONS  
Figure 9. Two-Wire Balanced Systems, RS-422  
6
Submit Documentation Feedback  
Copyright © 1998–2013, Texas Instruments Incorporated  
Product Folder Links: DS26C32AM DS26C32AT  
DS26C32AM, DS26C32AT  
www.ti.com  
SNLS382C JUNE 1998REVISED APRIL 2013  
Typical Performance Characteristics  
Differential Propagation Delay  
vs Temperature  
Differential Propagation Delay  
vs Power Supply Voltage  
Figure 10.  
Figure 11.  
Differential Skew  
vs  
Differential Skew vs  
Temperature  
Power  
Supply Voltage  
Figure 12.  
Figure 13.  
Output High Voltage vs  
Output High Current  
Output High Voltage vs  
Output High Current  
Figure 14.  
Figure 15.  
Copyright © 1998–2013, Texas Instruments Incorporated  
Submit Documentation Feedback  
7
Product Folder Links: DS26C32AM DS26C32AT  
DS26C32AM, DS26C32AT  
SNLS382C JUNE 1998REVISED APRIL 2013  
www.ti.com  
Typical Performance Characteristics (continued)  
Output Low Voltage vs  
Output Low Current  
Output Low Voltage vs  
Output Low Current  
Figure 16.  
Figure 17.  
Input Current  
vs  
Input Resistance vs  
Input Voltage  
Power  
Supply Voltage  
Figure 18.  
Figure 19.  
Hysteresis & Differential  
Transition Voltage vs  
Temperature  
Hysteresis & Differential  
Transition Voltage vs  
Power Supply Voltage  
Figure 20.  
Figure 21.  
8
Submit Documentation Feedback  
Copyright © 1998–2013, Texas Instruments Incorporated  
Product Folder Links: DS26C32AM DS26C32AT  
DS26C32AM, DS26C32AT  
www.ti.com  
SNLS382C JUNE 1998REVISED APRIL 2013  
Typical Performance Characteristics (continued)  
Supply Current vs  
Temperature  
Disabled Supply Current vs  
Power Supply Voltage  
Figure 22.  
Figure 23.  
Supply Current vs  
Data Rate  
Figure 24.  
Copyright © 1998–2013, Texas Instruments Incorporated  
Submit Documentation Feedback  
9
Product Folder Links: DS26C32AM DS26C32AT  
 
DS26C32AM, DS26C32AT  
SNLS382C JUNE 1998REVISED APRIL 2013  
www.ti.com  
REVISION HISTORY  
Changes from Revision B (April 2013) to Revision C  
Page  
Changed layout of National Data Sheet to TI format ............................................................................................................ 9  
10  
Submit Documentation Feedback  
Copyright © 1998–2013, Texas Instruments Incorporated  
Product Folder Links: DS26C32AM DS26C32AT  
PACKAGE OPTION ADDENDUM  
www.ti.com  
15-Apr-2013  
PACKAGING INFORMATION  
Orderable Device  
Status Package Type Package Pins Package  
Eco Plan Lead/Ball Finish  
MSL Peak Temp  
Op Temp (°C)  
Top-Side Markings  
Samples  
Drawing  
Qty  
(1)  
(2)  
(3)  
(4)  
DS26C32ATM  
ACTIVE  
SOIC  
SOIC  
D
16  
16  
48  
TBD  
Call TI  
CU SN  
Call TI  
-40 to 85  
-40 to 85  
DS26C32ATM  
DS26C32ATM/NOPB  
ACTIVE  
D
48  
Green (RoHS  
& no Sb/Br)  
Level-1-260C-UNLIM  
DS26C32ATM  
DS26C32ATMX  
ACTIVE  
ACTIVE  
SOIC  
SOIC  
D
D
16  
16  
2500  
2500  
TBD  
Call TI  
CU SN  
Call TI  
-40 to 85  
-40 to 85  
DS26C32ATM  
DS26C32ATM  
DS26C32ATMX/NOPB  
Green (RoHS  
& no Sb/Br)  
Level-1-260C-UNLIM  
(1) The marketing status values are defined as follows:  
ACTIVE: Product device recommended for new designs.  
LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect.  
NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design.  
PREVIEW: Device has been announced but is not in production. Samples may or may not be available.  
OBSOLETE: TI has discontinued the production of the device.  
(2) Eco Plan - The planned eco-friendly classification: Pb-Free (RoHS), Pb-Free (RoHS Exempt), or Green (RoHS & no Sb/Br) - please check http://www.ti.com/productcontent for the latest availability  
information and additional product content details.  
TBD: The Pb-Free/Green conversion plan has not been defined.  
Pb-Free (RoHS): TI's terms "Lead-Free" or "Pb-Free" mean semiconductor products that are compatible with the current RoHS requirements for all 6 substances, including the requirement that  
lead not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, TI Pb-Free products are suitable for use in specified lead-free processes.  
Pb-Free (RoHS Exempt): This component has a RoHS exemption for either 1) lead-based flip-chip solder bumps used between the die and package, or 2) lead-based die adhesive used between  
the die and leadframe. The component is otherwise considered Pb-Free (RoHS compatible) as defined above.  
Green (RoHS & no Sb/Br): TI defines "Green" to mean Pb-Free (RoHS compatible), and free of Bromine (Br) and Antimony (Sb) based flame retardants (Br or Sb do not exceed 0.1% by weight  
in homogeneous material)  
(3) MSL, Peak Temp. -- The Moisture Sensitivity Level rating according to the JEDEC industry standard classifications, and peak solder temperature.  
(4)  
Multiple Top-Side Markings will be inside parentheses. Only one Top-Side Marking contained in parentheses and separated by a "~" will appear on a device. If a line is indented then it is a  
continuation of the previous line and the two combined represent the entire Top-Side Marking for that device.  
Important Information and Disclaimer:The information provided on this page represents TI's knowledge and belief as of the date that it is provided. TI bases its knowledge and belief on information  
provided by third parties, and makes no representation or warranty as to the accuracy of such information. Efforts are underway to better integrate information from third parties. TI has taken and  
continues to take reasonable steps to provide representative and accurate information but may not have conducted destructive testing or chemical analysis on incoming materials and chemicals.  
TI and TI suppliers consider certain information to be proprietary, and thus CAS numbers and other limited information may not be available for release.  
In no event shall TI's liability arising out of such information exceed the total purchase price of the TI part(s) at issue in this document sold by TI to Customer on an annual basis.  
Addendum-Page 1  
PACKAGE OPTION ADDENDUM  
www.ti.com  
15-Apr-2013  
Addendum-Page 2  
PACKAGE MATERIALS INFORMATION  
www.ti.com  
24-Apr-2013  
TAPE AND REEL INFORMATION  
*All dimensions are nominal  
Device  
Package Package Pins  
Type Drawing  
SPQ  
Reel  
Reel  
A0  
B0  
K0  
P1  
W
Pin1  
Diameter Width (mm) (mm) (mm) (mm) (mm) Quadrant  
(mm) W1 (mm)  
DS26C32ATMX  
SOIC  
SOIC  
D
D
16  
16  
2500  
2500  
330.0  
330.0  
16.4  
16.4  
6.5  
6.5  
10.3  
10.3  
2.3  
2.3  
8.0  
8.0  
16.0  
16.0  
Q1  
Q1  
DS26C32ATMX/NOPB  
Pack Materials-Page 1  
PACKAGE MATERIALS INFORMATION  
www.ti.com  
24-Apr-2013  
*All dimensions are nominal  
Device  
Package Type Package Drawing Pins  
SPQ  
Length (mm) Width (mm) Height (mm)  
DS26C32ATMX  
SOIC  
SOIC  
D
D
16  
16  
2500  
2500  
367.0  
367.0  
367.0  
367.0  
35.0  
35.0  
DS26C32ATMX/NOPB  
Pack Materials-Page 2  
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