DS26F32MWRQMLV [TI]

四路差分线路接收器 | NAD | 16 | -55 to 125;
DS26F32MWRQMLV
型号: DS26F32MWRQMLV
厂家: TEXAS INSTRUMENTS    TEXAS INSTRUMENTS
描述:

四路差分线路接收器 | NAD | 16 | -55 to 125

CD 接口集成电路
文件: 总16页 (文件大小:535K)
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DS26F32MQML  
www.ti.com  
SNOSAS5A MARCH 2006REVISED APRIL 2013  
DS26F32MQML Quad Differential Line Receivers  
Check for Samples: DS26F32MQML  
1
FEATURES  
DESCRIPTION  
The DS26F32 is a quad differential line receiver  
designed to meet the requirements of EIA Standards  
RS-422 and RS-423, and Federal Standards 1020  
and 1030 for balanced and unbalanced digital data  
transmission.  
2
Input Voltage Range of ±7.0V (Differential or  
Common Mode) ±0.2V Sensitivity over the  
Input Voltage Range  
High Input Impedance  
Operation from Single +5.0V Supply  
The DS26F32 offers improved performance due to  
the use of state-of-the-art L-FAST bipolar technology.  
The L-FAST technology allows for higher speeds and  
lower currents by utilizing extremely short gate delay  
times. Thus, the DS26F32 features lower power,  
extended temperature range, and improved  
specifications.  
Input Pull-Down Resistor Prevents Output  
Oscillation on Unused Channels  
TRI-STATE Outputs, with Choice of  
Complementary Enables, for Receiving  
Directly onto a Data Bus  
The device features an input sensitivity of 200 mV  
over the input common mode range of ±7.0V. The  
DS26F32 provides an enable function common to all  
four receivers and TRI-STATE outputs with 8.0 mA  
sink capability. Also,  
a
fail-safe input/output  
relationship keeps the outputs high when the inputs  
are open.  
The DS26F32 offers optimum performance when  
used with the DS26F31 Quad Differential Line Driver.  
1
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of  
Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.  
2
All trademarks are the property of their respective owners.  
PRODUCTION DATA information is current as of publication date.  
Products conform to specifications per the terms of the Texas  
Instruments standard warranty. Production processing does not  
necessarily include testing of all parameters.  
Copyright © 2006–2013, Texas Instruments Incorporated  
DS26F32MQML  
SNOSAS5A MARCH 2006REVISED APRIL 2013  
www.ti.com  
Connection Diagrams  
Figure 2. 20-Lead LCCC Package-Top View  
See Package Number NAJ0020A  
Figure 1. 16-Lead CDIP Package-Top View  
See Package Number NAC0016A, NFE0016A, or  
NAD0016A  
Table 1. Function Table (Each Receiver)(1)  
Differential Inputs  
Enables  
Outputs  
VID = (V I+) (VI)  
E
H
X
H
X
L
E
OUT  
H
VID 0.2V  
X
L
H
VID ≤ −0.2V  
X
L
L
L
X
H
Z
(1) H = High Level  
L = Low Level  
X = Immaterial  
These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam  
during storage or handling to prevent electrostatic damage to the MOS gates.  
2
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Copyright © 2006–2013, Texas Instruments Incorporated  
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DS26F32MQML  
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SNOSAS5A MARCH 2006REVISED APRIL 2013  
(1)  
Absolute Maximum Ratings  
Storage Temperature Range  
Operating Temperature Range  
Lead Temperature (soldering, 60 sec)  
Supply Voltage  
65°C TA +150°C  
55°C TA +125°C  
300°C  
7.0V  
Common Mode Voltage Range  
Differential Input Voltage  
±25V  
±25V  
Enable Voltage  
7.0V  
Output Sink Current  
50 mA  
500 mW  
(2) (3)  
Maximum Power Dissipation (PD maxat 25°C)  
Thermal Resistance  
θJA  
,
NFE0016A package  
NAD0016A package  
NAJ0020A package  
θJC  
100°C/W  
142°C/W  
87°C/W  
Junction-to- case  
See MIL-STD-1835  
(1) Absolute Maximum Ratings indicate limits beyond which damage to the device may occur. Operating Ratings indicate conditions for  
which the device is functional, but do not verify specific performance limits. For verified specifications and test conditions, see the  
Electrical Characteristics. The verified specifications apply only for the test conditions listed. Some performance characteristics may  
degrade when the device is not operated under the listed test conditions.  
(2) Derate J package 10.0mW/°C above +25°C, derate W package 7.1mW/°C above +25°C, derate E package 11.5mW/°C above +25°C.  
(3) Power dissipation must be externally controlled at elevated temperatures.  
Recommended Operating Range  
Operating Temperature  
55°C TA +125°C  
Supply Voltage  
4.5V to 5.5V  
Table 2. Radiation Features  
DS26F32MJRQMLV  
DS26F32MWRQMLV  
DS26F32MWGRQMLV  
100 krads (Si)  
100 krads (Si)  
100 krads (Si)  
Table 3. Quality Conformance Inspection Mil-Std-883, Method 5005 - Group A  
Subgroup  
Description  
Static tests at  
Temp °C  
25  
1
2
Static tests at  
125  
-55  
25  
3
Static tests at  
4
Dynamic tests at  
Dynamic tests at  
Dynamic tests at  
Functional tests at  
Functional tests at  
Functional tests at  
Switching tests at  
Switching tests at  
Switching tests at  
Settling time at  
Settling time at  
Settling time at  
5
125  
-55  
25  
6
7
8A  
8B  
9
125  
-55  
25  
10  
11  
12  
13  
14  
125  
-55  
25  
125  
-55  
Copyright © 2006–2013, Texas Instruments Incorporated  
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3
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DS26F32MQML  
SNOSAS5A MARCH 2006REVISED APRIL 2013  
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DS26F32 Electrical Characteristics DC Parameters  
The following conditions apply, unless otherwise specified.  
(1)  
DC:  
VCC = 5V  
Sub-  
groups  
Parameter  
Test Conditions  
Pin under test  
Notes  
Min Max  
Units  
IIn  
Input Current  
2.3  
mA  
1, 2, 3  
VCC = 4.5V, VI = 15V  
Other inputs -15V VI +15V  
Pin under test  
-2.8  
mA  
1, 2, 3  
VCC = 5.5V, VI = -15V  
Other inputs -15V VI +15V  
IIL  
Logical "0" Enable Current  
Logical "1" Enable Current  
Logical "1" Enable Current  
Input Clamp Voltage (Enable)  
Logical "1" Output Voltage  
VCC = 5.5V, VEn = 0.4V  
VCC = 5.5V, VI = 2.7V  
VCC = 5.5V, VI = 5.5V  
VCC = 4.5V, II = -18mA  
-360  
µA  
µA  
µA  
V
1, 2, 3  
1, 2, 3  
1, 2, 3  
1, 2, 3  
1, 2, 3  
IIH  
II  
10  
50  
VIK  
VOH  
-1.5  
VCC = 4.5V, IOH = -440µA,  
2.5  
V
ΔVI = 1V, VEn = .8 = VEn  
VOL  
Logical "0" Output Voltage  
VCC = 4.5V, VEn =0.8V = VEn  
IOL = 4mA, ΔVI = -1V  
,
0.4  
V
V
1, 2, 3  
1, 2, 3  
1, 2, 3  
1, 2, 3  
1, 2, 3  
VCC = 4.5V, VEn = 8V = VEn  
,
.45  
IOL = 8mA, ΔVI = -1V  
ICC  
IOZ  
Supply Current  
VCC = 5.5V, All VI = Gnd,  
VEn = 0V, VEn = 2V  
50  
mA  
µA  
µA  
Off-State Output Current  
VCC = 5.5V, VO = 0.4V,  
VEn = 0.8V, VEn = 2V  
-20  
VCC = 5.5V, VO = 2.4V,  
VEn = 0.8V, VEn = 2V  
20  
RI  
Input Resistance  
-15 VCM 15V  
14  
KΩ  
1, 2, 3  
1, 2, 3  
(2)  
(2)  
VTh  
Differential Input Voltage  
VCC = 4.5V, VOUT = VOL or VOH  
-7V VCM 7V,  
VEn = VEn = 2.5V  
-0.2  
0.2  
0.2  
0.8  
V
VCC = 5.5V, VOUT = VOL or VOH  
-7V VCM 7V,  
VEn = VEn = 2.5V  
-0.2  
V
1, 2, 3  
(2)  
(2)  
VIL  
Logical "0" Input Voltage (Enable) VCC = 5.5V  
Logical "1" Input Voltage (Enable) VCC = 4.5V  
V
V
1, 2, 3  
1, 2, 3  
1, 2, 3  
VIH  
2.0  
-15  
ISC Min  
Output Short Circuit Current  
VCC = 4.5V, VO = 0V,  
mA  
ΔVI = 1V  
ISC Max  
Output Short Circuit Current  
VCC = 5.5V, VO = 0V,  
-85  
mA  
1, 2, 3  
ΔVI = 1V  
(1) Pre and post irradiation limits are identical to those listed under AC and DC electrical characteristics. These parts may be dose rate  
sensitive in a space environment and demonstrate enhanced low dose rate effect. Radiation end point limits for the noted parameters  
are specified only for the conditions as specified in Mil-Std-883, Method 1019.5, Condition A  
(2) Parameter tested go-no-go only.  
4
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DS26F32MQML  
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SNOSAS5A MARCH 2006REVISED APRIL 2013  
DS26F32 Electrical Characteristics AC Parameters  
The following conditions apply, unless otherwise specified.  
(1)  
AC:  
VCC = 5V  
Sub-  
groups  
Parameter  
Test Conditions  
CL = 50pF  
Notes  
Min Max  
Units  
(2)  
(2)  
(3)  
(3)  
(2)  
(2)  
(3)  
(3)  
(2)  
(2)  
(3)  
(3)  
(2)  
(2)  
(3)  
(3)  
(2)  
(2)  
(3)  
(3)  
(2)  
(2)  
(3)  
(3)  
tPLH  
23  
31  
22  
30  
23  
31  
22  
30  
18  
29  
16  
27  
20  
29  
18  
27  
55  
62  
20  
27  
30  
42  
18  
30  
nS  
nS  
nS  
nS  
nS  
nS  
nS  
nS  
nS  
nS  
nS  
nS  
nS  
nS  
nS  
nS  
nS  
nS  
nS  
nS  
nS  
nS  
nS  
nS  
9
10, 11  
9
CL = 15pF  
CL = 50pF  
CL = 15pF  
CL = 50pF  
CL = 15pF  
CL = 50pF  
CL = 15pF  
CL = 50pF  
CL = 5pF  
10, 11  
9
tPHL  
tPZH  
tPZL  
tPHZ  
tPLZ  
10, 11  
9
10, 11  
9
Enable Time  
10, 11  
9
10, 11  
9
Enable Time  
Disable Time  
Disable Time  
10, 11  
9
10, 11  
9
10, 11  
9
10, 11  
9
CL = 50pF  
CL = 5pF  
10, 11  
9
10, 11  
(1) Pre and post irradiation limits are identical to those listed under AC and DC electrical characteristics. These parts may be dose rate  
sensitive in a space environment and demonstrate enhanced low dose rate effect. Radiation end point limits for the noted parameters  
are specified only for the conditions as specified in Mil-Std-883, Method 1019.5, Condition A  
(2) Tested at 50pF, system capacitance exceeds 5pF to 15pF.  
(3) Tested at 50pF specifies limit at 15pF & 5pF.  
DS26F32 Electrical Characteristics DC Drift Parameters  
This section applies to -QMLV devices only. Devices shall be read & recorded at TA = 25°C before and after each burn-in and  
shall not change by more than the limits indicated. The delta rejects shall be included in the PDA calculation.  
Sub-  
groups  
Parameter  
Test Conditions  
Notes  
Min Max  
Units  
VOH  
VOL  
Logical "1" Output Voltage  
VCC = 4.5V, IOH = -440µA,  
ΔVI = 1V, VEn = 0.8V = VEn  
-250 250  
mV  
1
Logical "0" Output Voltage  
Input Current  
VCC = 4.5V, IOL = 4mA,  
ΔVI = -1V, VEn = 0.8V = VEn  
-45  
-45  
45  
45  
mV  
mV  
mA  
1
1
1
VCC = 4.5V, IOL = 8mA,  
Δ VI = -1V, VEn = 0.8V = VEn  
II  
Pin under test  
VCC = 4.5V, VI = 15V  
Other inputs -15V VI +15V  
-0.28 0.28  
-0.28 0.28  
Pin under test  
mA  
1
VCC = 5.5V, VI = -15V  
Other inputs -15V VI +15V  
Copyright © 2006–2013, Texas Instruments Incorporated  
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5
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SNOSAS5A MARCH 2006REVISED APRIL 2013  
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Figure 3. Logic Symbol  
(B)  
(A)  
C L includes probe and jig capacitance.  
A. Parameter tested go-no-go only.  
B. Tested at 50pF specifies limit at 15pF and 5pF.  
Figure 4. Load Test Circuit for Three-State Outputs  
Diagram shown for ENABLE Low.  
S1 and S2 of Load Circuit are closed except where shown.  
Pulse Generator of all Pulses: Rate 1.0 MHz, ZO = 50Ω, tr 6.0 ns, tf 6.0 ns.  
Figure 5. Propagation Delay  
6
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DS26F32MQML  
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SNOSAS5A MARCH 2006REVISED APRIL 2013  
Diagram shown for ENABLE Low.  
S1 and S2 of Load Circuit are closed except where shown.  
Pulse Generator of all Pulses: Rate 1.0 MHz, ZO = 50Ω, tr 6.0 ns, tf 6.0 ns.  
All diodes are IN916 or IN3064.  
Figure 6. Enable and Disable Times  
TYPICAL APPLICATION  
Copyright © 2006–2013, Texas Instruments Incorporated  
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SNOSAS5A MARCH 2006REVISED APRIL 2013  
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REVISION HISTORY  
Released  
Revision  
Section  
New Release, Corporate format  
Originator  
Changes  
3/01/06  
*
L. Lytle  
1 MDS data sheet converted into one Corp.  
data sheet format. MNDS26F32M-X-RH Rev  
0C0 will be archived.  
4/15/2013  
A
TIS  
Changed layout of National Data Sheet to TI  
format  
8
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PACKAGE OPTION ADDENDUM  
www.ti.com  
10-Jun-2022  
PACKAGING INFORMATION  
Orderable Device  
Status Package Type Package Pins Package  
Eco Plan  
Lead finish/  
Ball material  
MSL Peak Temp  
Op Temp (°C)  
Device Marking  
Samples  
Drawing  
Qty  
(1)  
(2)  
(3)  
(4/5)  
(6)  
5962-7802005M2A  
ACTIVE  
LCCC  
CFP  
NAJ  
20  
16  
50  
RoHS-Exempt  
& Green  
Call TI  
Level-1-NA-UNLIM  
-55 to 125  
DS26F32ME/  
883 Q  
5962-78020  
05M2A ACO  
05M2A >T  
Samples  
5962-7802005MFA  
ACTIVE  
NAD  
19  
Non-RoHS  
& Green  
Call TI  
Level-1-NA-UNLIM  
-55 to 125  
DS26F32MW  
/883 Q  
Samples  
5962-78020  
05MFA ACO  
05MFA >T  
5962R7802005VEA  
5962R7802005VFA  
ACTIVE  
ACTIVE  
CDIP  
CFP  
NFE  
NAD  
16  
16  
25  
19  
Non-RoHS  
& Green  
Call TI  
Call TI  
Level-1-NA-UNLIM  
Level-1-NA-UNLIM  
-55 to 125  
-55 to 125  
DS26F32MJRQMLV  
5962R7802005VEA Q  
Samples  
Samples  
Non-RoHS  
& Green  
DS26F32MWR  
QMLV Q  
5962R78020  
05VFA ACO  
05VFA >T  
DS26F32 MW8  
ACTIVE WAFERSALE  
YS  
0
1
RoHS & Green  
Call TI  
Call TI  
Level-1-NA-UNLIM  
Level-1-NA-UNLIM  
-55 to 125  
-55 to 125  
Samples  
Samples  
DS26F32ME/883  
ACTIVE  
LCCC  
NAJ  
20  
50  
RoHS-Exempt  
& Green  
DS26F32ME/  
883 Q  
5962-78020  
05M2A ACO  
05M2A >T  
DS26F32MJRQMLV  
DS26F32MW/883  
ACTIVE  
ACTIVE  
CDIP  
CFP  
NFE  
NAD  
16  
16  
25  
19  
Non-RoHS  
& Green  
Call TI  
Call TI  
Level-1-NA-UNLIM  
Level-1-NA-UNLIM  
-55 to 125  
-55 to 125  
DS26F32MJRQMLV  
5962R7802005VEA Q  
Samples  
Samples  
Non-RoHS  
& Green  
DS26F32MW  
/883 Q  
5962-78020  
05MFA ACO  
05MFA >T  
DS26F32MWRQMLV  
ACTIVE  
CFP  
NAD  
16  
19  
Non-RoHS  
& Green  
Call TI  
Level-1-NA-UNLIM  
-55 to 125  
DS26F32MWR  
QMLV Q  
Samples  
5962R78020  
05VFA ACO  
05VFA >T  
Addendum-Page 1  
PACKAGE OPTION ADDENDUM  
www.ti.com  
10-Jun-2022  
(1) The marketing status values are defined as follows:  
ACTIVE: Product device recommended for new designs.  
LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect.  
NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design.  
PREVIEW: Device has been announced but is not in production. Samples may or may not be available.  
OBSOLETE: TI has discontinued the production of the device.  
(2) RoHS: TI defines "RoHS" to mean semiconductor products that are compliant with the current EU RoHS requirements for all 10 RoHS substances, including the requirement that RoHS substance  
do not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, "RoHS" products are suitable for use in specified lead-free processes. TI may  
reference these types of products as "Pb-Free".  
RoHS Exempt: TI defines "RoHS Exempt" to mean products that contain lead but are compliant with EU RoHS pursuant to a specific EU RoHS exemption.  
Green: TI defines "Green" to mean the content of Chlorine (Cl) and Bromine (Br) based flame retardants meet JS709B low halogen requirements of <=1000ppm threshold. Antimony trioxide based  
flame retardants must also meet the <=1000ppm threshold requirement.  
(3) MSL, Peak Temp. - The Moisture Sensitivity Level rating according to the JEDEC industry standard classifications, and peak solder temperature.  
(4) There may be additional marking, which relates to the logo, the lot trace code information, or the environmental category on the device.  
(5) Multiple Device Markings will be inside parentheses. Only one Device Marking contained in parentheses and separated by a "~" will appear on a device. If a line is indented then it is a continuation  
of the previous line and the two combined represent the entire Device Marking for that device.  
(6)  
Lead finish/Ball material - Orderable Devices may have multiple material finish options. Finish options are separated by a vertical ruled line. Lead finish/Ball material values may wrap to two  
lines if the finish value exceeds the maximum column width.  
Important Information and Disclaimer:The information provided on this page represents TI's knowledge and belief as of the date that it is provided. TI bases its knowledge and belief on information  
provided by third parties, and makes no representation or warranty as to the accuracy of such information. Efforts are underway to better integrate information from third parties. TI has taken and  
continues to take reasonable steps to provide representative and accurate information but may not have conducted destructive testing or chemical analysis on incoming materials and chemicals.  
TI and TI suppliers consider certain information to be proprietary, and thus CAS numbers and other limited information may not be available for release.  
In no event shall TI's liability arising out of such information exceed the total purchase price of the TI part(s) at issue in this document sold by TI to Customer on an annual basis.  
OTHER QUALIFIED VERSIONS OF DS26F32MQML, DS26F32MQML-SP :  
Military : DS26F32MQML  
Space : DS26F32MQML-SP  
NOTE: Qualified Version Definitions:  
Addendum-Page 2  
PACKAGE OPTION ADDENDUM  
www.ti.com  
10-Jun-2022  
Military - QML certified for Military and Defense Applications  
Space - Radiation tolerant, ceramic packaging and qualified for use in Space-based application  
Addendum-Page 3  
PACKAGE MATERIALS INFORMATION  
www.ti.com  
9-Aug-2022  
TUBE  
T - Tube  
height  
L - Tube length  
W - Tube  
width  
B - Alignment groove width  
*All dimensions are nominal  
Device  
Package Name Package Type  
Pins  
SPQ  
L (mm)  
W (mm)  
T (µm)  
B (mm)  
5962-7802005M2A  
5962-7802005MFA  
5962R7802005VEA  
5962R7802005VFA  
DS26F32ME/883  
NAJ  
NAD  
NFE  
NAD  
NAJ  
NFE  
NAD  
NAD  
LCCC  
CFP  
20  
16  
16  
16  
20  
16  
16  
16  
50  
19  
25  
19  
50  
25  
19  
19  
470  
502  
11  
23  
3810  
9398  
13440  
9398  
3810  
13440  
9398  
9398  
0
9.78  
NA  
CDIP  
CFP  
506.98  
502  
15.24  
23  
9.78  
0
LCCC  
CDIP  
CFP  
470  
11  
DS26F32MJRQMLV  
DS26F32MW/883  
DS26F32MWRQMLV  
506.98  
502  
15.24  
23  
NA  
9.78  
9.78  
CFP  
502  
23  
Pack Materials-Page 1  
MECHANICAL DATA  
NFE0016A  
J16A (REV L)  
www.ti.com  
MECHANICAL DATA  
NAD0016A  
W16A (Rev T)  
www.ti.com  
MECHANICAL DATA  
NAJ0020A  
E20A (Rev F)  
www.ti.com  
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