ESD1LIN24DYFR [TI]
适用于 LIN 接口的 3pF、±24V、±30kV ESD 保护二极管 | DYF | 2 | -50 to 150;
| 型号： | ESD1LIN24DYFR |
| 厂家： | 
TEXAS INSTRUMENTS |
| 描述： | 适用于 LIN 接口的 3pF、±24V、±30kV ESD 保护二极管 | DYF | 2 | -50 to 150 二极管 |
| 文件： | 总14页 (文件大小：963K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
ESD1LIN24
ZHCSR65A –NOVEMBER 2022 –REVISED DECEMBER 2022
ESD1LIN24 24V 单通道ESD 保护二极管
1 特性
3 说明
• IEC 61000-4-2 4 级ESD 保护：
ESD1LIN24 是适用于本地互连网络 (LIN) 的单通道低
电容双向 ESD 保护器件。该器件旨在耗散超过 IEC
61000-4-2 国际标准所规定最高水平（±30kV 接触放
电，±30kV 气隙放电）的接触 ESD 冲击。低动态电阻
和低钳位电压有助于保护系统免受瞬态事件的影响。在
对鲁棒性和可靠性要求很高的安全系统中，这种保护至
关重要。
– ±30 kV 接触放电
– ±30 kV 气隙放电
• 强大的浪涌保护：
– IEC 61000-4-5 (8/20µs)：4.3A
• 24V 工作电压
• 双向ESD 保护
• 低钳位电压可保护下游元件
• 温度范围：–55°C 至+150°C
• I/O 电容= 2.3pF（典型值）
• 采用业界通用封装：SOD-323 (DYF)
• 引线式封装，用于自动光学检测(AOI)
封装信息(1)
器件型号
封装
封装尺寸（标称值）
ESD1LIN24
DYF（SOD-323，2）
2.50mm × 1.20mm
(1) 要了解所有可用封装，请见数据表末尾的可订购产品附录。
2 应用
• USB 电力传输(USB-PD)
– VBUS 保护
– IO 保护
• 工业控制网络：
– 本地互连网络(LIN)
– 单线CAN ESD 保护
– DeviceNet
– 智能配电系统
VBAT
VSUP
1 k
VSUP
LIN
RXD
Application
LIN
(for example,
Transceiver
MCU I/O)
1
TXD
LIN
Connector
GND
2
ESD1LIN24
典型应用
本文档旨在为方便起见，提供有关TI 产品中文版本的信息，以确认产品的概要。有关适用的官方英文版本的最新信息，请访问
www.ti.com，其内容始终优先。TI 不保证翻译的准确性和有效性。在实际设计之前，请务必参考最新版本的英文版本。
English Data Sheet: SLVSH11
ESD1LIN24
www.ti.com.cn
ZHCSR65A –NOVEMBER 2022 –REVISED DECEMBER 2022
Table of Contents
8.4 Device Functional Modes............................................7
9 Application and Implementation....................................8
9.1 Application Information............................................... 8
9.2 Typical Application...................................................... 8
10 Power Supply Recommendations................................9
11 Layout.............................................................................9
11.1 Layout Guidelines..................................................... 9
11.2 Layout Example...................................................... 10
12 Device and Documentation Support..........................11
12.1 Documentation Support.......................................... 11
12.2 接收文档更新通知................................................... 11
12.3 支持资源..................................................................11
12.4 Trademarks............................................................. 11
12.5 Electrostatic Discharge Caution..............................11
12.6 术语表..................................................................... 11
13 Mechanical, Packaging, and Orderable
1 特性................................................................................... 1
2 应用................................................................................... 1
3 说明................................................................................... 1
4 Revision History.............................................................. 2
5 Pin Configuration and Functions...................................3
6 Specifications.................................................................. 4
6.1 Absolute Maximum Ratings........................................ 4
6.2 ESD Ratings—JEDEC Specification...........................4
6.3 ESD Ratings—IEC Specification................................ 4
6.4 Recommended Operating Conditions.........................4
6.5 Thermal Information....................................................4
6.6 Electrical Characteristics.............................................5
7 Typical Characteristics –ESD1LIN24...........................6
8 Detailed Description........................................................7
8.1 Overview.....................................................................7
8.2 Functional Block Diagram...........................................7
8.3 Feature Description.....................................................7
Information.................................................................... 11
4 Revision History
注：以前版本的页码可能与当前版本的页码不同
Changes from Revision * (November 2022) to Revision A (December 2022)
Page
• 将数据表的状态从预告信息更改为“量产数据”.............................................................................................. 1
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5 Pin Configuration and Functions
ID Area
1
2
图5-1. DYF Package, 2-Pin SOD-323 (Top View)
表5-1. Pin Functions
PIN
TYPE(1)
DESCRIPTION
NAME
NO.
IO
1
I/O
G
ESD protected IO
Connect to ground.
GND
2
(1) I = Input, O = Output, I/O = Input or Output, G = Ground, P = Power.
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6 Specifications
6.1 Absolute Maximum Ratings
over operating free-air temperature range (unless otherwise noted)(1)
MIN
MAX
159.1
4.3
UNIT
W
IEC 61000-4-5 Power (tp - 8/20 µs) at 25°C
Peak pulse
IEC 61000-4-5 current (tp - 8/20 µs) at 25°C
A
TA
Operating free-air temperature
Storage temperature
-55
-65
150
°C
Tstg
155
°C
(1) Operation outside the Absolute Maximum Ratings may cause permanent device damage. Absolute Maximum Ratings do not imply
functional operation of the device at these or any other conditions beyond those listed under Recommended Operating Conditions. If
used outside the Recommended Operating Conditions but within the Absolute Maximum Ratings, the device may not be fully
functional, and this may affect device reliability, functionality, performance, and shorten the device lifetime.
6.2 ESD Ratings—JEDEC Specification
VALUE
UNIT
Human body model (HBM), per ANSI/ESDA/
JEDEC JS-001(1)
± 2500
V(ESD)
Electrostatic discharge
V
Charged device model (CDM), per JEDEC
specification JS-002(2)
± 1000
(1) JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard
ESD control process
(2) JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process.
6.3 ESD Ratings—IEC Specification
VALUE
UNIT
IEC 61000-4-2 Contact Discharge, all pins
IEC 61000-4-2 Air-gap Discharge, all pins
±30000
±30000
V(ESD)
Electrostatic discharge
V
6.4 Recommended Operating Conditions
over operating free-air temperature range (unless otherwise noted)
MIN
-24
-55
NOM
MAX
UNIT
V
VIN
TA
Input voltage
24
Operating free-air temperature
150
°C
6.5 Thermal Information
ESD1LIN24
THERMAL METRIC(1)
DYF (SOD-323)
2 PINS
705.4
UNIT
RθJA
RθJC(top)
RθJB
ΨJT
Junction-to-ambient thermal resistance
Junction-to-case (top) thermal resistance
Junction-to-board thermal resistance
°C/W
°C/W
°C/W
°C/W
°C/W
315
561.5
Junction-to-top characterization parameter
Junction-to-board characterization parameter
145
550.2
ΨJB
(1) For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application
report.
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6.6 Electrical Characteristics
over TA = 25°C (unless otherwise noted)
PARAMETER
TEST CONDITIONS
MIN
–24
TYP
MAX
24
UNIT
VRWM
VBRF
VBRR
Reverse stand-off voltage
V
IIO = 10 mA
25.5
35.5
Breakdown voltage(1)
V
IIO = –10 mA
–35.5
–25.5
IPP = 4.3 A, tp = 8/20 µs, from IO to
GND
Clamping voltage(2)
37
42
VCLAMP
V
Clamping voltage(3)
IPP = 16 A, TLP, from IO to GND
VIO = ±24 V
40
1
ILEAK
RDYN
CL
Leakage current, any IO pin to GND
Dynamic resistance(3)
-50
50
nA
0.5
2.3
Ω
Line capacitance, any IO to GND
VIO = 0 V, f = 1 MHz, Vp-p = 30 mV
3.8
pF
(1) VBRF and VBRR are defined as the voltage when ±10 mA is applied in the positive-going direction, before the device latches into the
snapback state.
(2) Device stressed with 8/20 μs exponential decay waveform according to IEC 61000-4-5.
(3) Non-repetitive current pulse, Transmission Line Pulse (TLP); square pulse; ANSI / ESD STM5.5.1-2008
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7 Typical Characteristics –ESD1LIN24
图7-1. Positive TLP Curve
图7-2. Negative TLP Curve
图7-4. −8-kV Clamped IEC Waveform
图7-3. +8-kV Clamped IEC Waveform
图7-6. DC Voltage Sweep I-V Curve
图7-5. Capacitance vs. Bias Voltage
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8 Detailed Description
8.1 Overview
The ESD1LIN24 is a single-channel bidirectional ESD diode. This device can dissipate ESD strikes above the
maximum level specified by the IEC 61000-4-2 standard. The low capacitance between the I/O pins make this
device suitable for slower speed signals such as LIN, USB-PD, or industrial I/O applications. The surge current
capability is suitable for VBUS protection or industrial I/Os requiring 4.3 A of surge current protection.
8.2 Functional Block Diagram
1
2
8.3 Feature Description
This clamping device has a small dynamic resistance, which makes the clamping voltage low when the device is
actively protecting other circuits. The breakdown is bidirectional so these protection devices are a good fit for
applications requiring postive and negative polarity protection. Low leakage allows the diode to conserve power
when working below the VRWM. The temperature range of −55°C to +150°C makes this device work at extensive
temperatures in most environments. The leaded SOD-323 package is good for applications requiring autmotic
optical inspection (AOI).
8.3.1 IO Capacitance
The capacitance between the I/O pins is 2.3 pF. The capacitance of this device can support data rates up to 1
Gbps.
8.3.2 IEC 61000-4-5 Surge Protection
The I/O pins of this device have a surge rating of 4.3 A (8/20 µs waveform).
8.4 Device Functional Modes
The ESD1LIN24 is a single channel passive clamp that has low leakage during normal operation when the
voltage between I/O and GND is below VRWM, and activate when the voltage between I/O and GND goes above
VBR. During ESD events, transient voltages up to ±30 kV can be clamped on either channel. When the voltages
on the protected lines fall below the VHOLD, the device reverts back to the low leakage passive state.
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9 Application and Implementation
备注
Information in the following applications sections is not part of the TI component specification, and TI
does not warrant its accuracy or completeness. TI’s customers are responsible for determining
suitability of components for their purposes, as well as validating and testing their design
implementation to confirm system functionality.
9.1 Application Information
The ESD1LIN24 is a single channel TVS diode which is used to provide a path to ground for dissipating ESD
events on USB-PD or industrial I/O lines. As the current from ESD passes through the TVS, only a small voltage
drop is present across the diode. This is the voltage presented to the protected IC. The low RDYN of the triggered
TVS holds this voltage, VCLAMP, to a safe level for the protected IC.
9.2 Typical Application
VBAT
VSUP
1 k
VSUP
LIN
LIN
RXD
Application
(for example,
MCU I/O)
Transceiver
TXD
1
2
LIN
Connector
GND
ESD1LIN24
图9-1. Typical Application
9.2.1 Design Requirements
For this design example, the ESD1LIN24 is used to provide ESD protection to a LIN transceiver. 表 9-1 lists the
known design paramters for this application.
表9-1. Design Parameters for Typical Applications
Design Parameter
Diode configuration
VIO signal range
Value
Bidirectional
Up to 18 V
±24 V
VRWM
Jumpstart short to battery event on VIO
Data rate
±24 V
Up to 10 Mbps
1 kΩ
Pullup resistor
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9.2.2 Detailed Design Procedure
The ESD1LIN24 has a VRWM of ±24 V to prevent the diode from being damaged during a short event. The
bidirectional characteristic ensures both positive and negative polarity are protected. The low capacitance of 2.3
pF permits data rates up to 1 Gbps, which allows the designer to meet the requirements for LIN. The 1 kΩ and
VSUP diode allows the LIN signal to be pulled up to a diode drop below the battery voltage.
9.2.3 Application Curves
图9-3. -8-kV Clamped IEC Waveform
图9-2. +8-kV Clamped IEC Waveform
10 Power Supply Recommendations
These devices are passive TVS diode-based ESD protection devices, therefore there is no requirement to power
them. Ensure that the maximum voltage specifications for each pin is not violated.
11 Layout
11.1 Layout Guidelines
• The optimum placement of the device is as close to the connector as possible.
– EMI during an ESD event can couple from the trace being struck to other nearby unprotected traces,
resulting in early system failures.
– The PCB designer must minimize the possibility of EMI coupling by keeping any unprotected traces away
from the protected traces which are between the TVS and the connector.
• Route the protected traces as straight as possible.
• Eliminate any sharp corners on the protected traces between the TVS and the connector by using rounded
corners with the largest radii possible.
– Electric fields tend to build up on corners, increasing EMI coupling.
• If pin 1 or 2 is connected to ground, use a thick and short trace for this return path.
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11.2 Layout Example
VBUS
To power supply
ESD1LIN24
CC1
CC2
ESD1LIN24
ESD1LIN24
SBU1
SBU2
D+
ESD1LIN24
ESD751
D-
ESD751
Legend
GND
Pin to GND
图11-1. Layout Recommendation
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12 Device and Documentation Support
TI offers an extensive line of development tools. Tools and software to evaluate the performance of the device,
generate code, and develop solutions are listed below.
12.1 Documentation Support
12.1.1 Related Documentation
For related documentation, see the following:
• Texas Instruments, ESD Layout Guide application reports
• Texas Instruments, Generic ESD Evaluation Module user's guide
• Texas Instruments, Picking ESD Diodes for Ultra High-Speed Data Lines application reports
• Texas Instruments, Reading and Understanding an ESD Protection data sheet
12.2 接收文档更新通知
要接收文档更新通知，请导航至 ti.com 上的器件产品文件夹。点击订阅更新 进行注册，即可每周接收产品信息更
改摘要。有关更改的详细信息，请查看任何已修订文档中包含的修订历史记录。
12.3 支持资源
TI E2E™ 支持论坛是工程师的重要参考资料，可直接从专家获得快速、经过验证的解答和设计帮助。搜索现有解
答或提出自己的问题可获得所需的快速设计帮助。
链接的内容由各个贡献者“按原样”提供。这些内容并不构成 TI 技术规范，并且不一定反映 TI 的观点；请参阅
TI 的《使用条款》。
12.4 Trademarks
TI E2E™ is a trademark of Texas Instruments.
所有商标均为其各自所有者的财产。
12.5 Electrostatic Discharge Caution
This integrated circuit can be damaged by ESD. Texas Instruments recommends that all integrated circuits be handled
with appropriate precautions. Failure to observe proper handling and installation procedures can cause damage.
ESD damage can range from subtle performance degradation to complete device failure. Precision integrated circuits may
be more susceptible to damage because very small parametric changes could cause the device not to meet its published
specifications.
12.6 术语表
TI 术语表
本术语表列出并解释了术语、首字母缩略词和定义。
13 Mechanical, Packaging, and Orderable Information
The following pages include mechanical, packaging, and orderable information. This information is the most
current data available for the designated devices. This data is subject to change without notice and revision of
this document. For browser-based versions of this data sheet, refer to the left-hand navigation.
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PACKAGE OPTION ADDENDUM
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11-Jan-2023
PACKAGING INFORMATION
Orderable Device
Status Package Type Package Pins Package
Eco Plan
Lead finish/
Ball material
MSL Peak Temp
Op Temp (°C)
Device Marking
Samples
Drawing
Qty
(1)
(2)
(3)
(4/5)
(6)
ESD1LIN24DYFR
ACTIVE
SOT
DYF
2
3000 RoHS & Green
SN
Level-3-260C-168 HR
-50 to 150
2QJF
Samples
(1) The marketing status values are defined as follows:
ACTIVE: Product device recommended for new designs.
LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect.
NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design.
PREVIEW: Device has been announced but is not in production. Samples may or may not be available.
OBSOLETE: TI has discontinued the production of the device.
(2) RoHS: TI defines "RoHS" to mean semiconductor products that are compliant with the current EU RoHS requirements for all 10 RoHS substances, including the requirement that RoHS substance
do not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, "RoHS" products are suitable for use in specified lead-free processes. TI may
reference these types of products as "Pb-Free".
RoHS Exempt: TI defines "RoHS Exempt" to mean products that contain lead but are compliant with EU RoHS pursuant to a specific EU RoHS exemption.
Green: TI defines "Green" to mean the content of Chlorine (Cl) and Bromine (Br) based flame retardants meet JS709B low halogen requirements of <=1000ppm threshold. Antimony trioxide based
flame retardants must also meet the <=1000ppm threshold requirement.
(3) MSL, Peak Temp. - The Moisture Sensitivity Level rating according to the JEDEC industry standard classifications, and peak solder temperature.
(4) There may be additional marking, which relates to the logo, the lot trace code information, or the environmental category on the device.
(5) Multiple Device Markings will be inside parentheses. Only one Device Marking contained in parentheses and separated by a "~" will appear on a device. If a line is indented then it is a continuation
of the previous line and the two combined represent the entire Device Marking for that device.
(6)
Lead finish/Ball material - Orderable Devices may have multiple material finish options. Finish options are separated by a vertical ruled line. Lead finish/Ball material values may wrap to two
lines if the finish value exceeds the maximum column width.
Important Information and Disclaimer:The information provided on this page represents TI's knowledge and belief as of the date that it is provided. TI bases its knowledge and belief on information
provided by third parties, and makes no representation or warranty as to the accuracy of such information. Efforts are underway to better integrate information from third parties. TI has taken and
continues to take reasonable steps to provide representative and accurate information but may not have conducted destructive testing or chemical analysis on incoming materials and chemicals.
TI and TI suppliers consider certain information to be proprietary, and thus CAS numbers and other limited information may not be available for release.
In no event shall TI's liability arising out of such information exceed the total purchase price of the TI part(s) at issue in this document sold by TI to Customer on an annual basis.
OTHER QUALIFIED VERSIONS OF ESD1LIN24 :
Addendum-Page 1
PACKAGE OPTION ADDENDUM
www.ti.com
11-Jan-2023
Automotive : ESD1LIN24-Q1
•
NOTE: Qualified Version Definitions:
Automotive - Q100 devices qualified for high-reliability automotive applications targeting zero defects
•
Addendum-Page 2
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