ESD2CANFD24 [TI]

具有 8/20µS 浪涌的双通道 2.5pF、±24V、±25kV ESD 保护二极管;
ESD2CANFD24
型号: ESD2CANFD24
厂家: TEXAS INSTRUMENTS    TEXAS INSTRUMENTS
描述:

具有 8/20µS 浪涌的双通道 2.5pF、±24V、±25kV ESD 保护二极管

二极管
文件: 总21页 (文件大小:1597K)
中文:  中文翻译
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ESD2CANFD24  
ZHCSR82 NOVEMBER 2022  
ESD2CANFD24 用于车载网络24V2 ESD 保护二极管  
1 特性  
3 说明  
IEC 61000-4-2 4 ESD 保护  
ESD2CANFD24 是一款用于控制器局域网 (CAN) 接口  
保护的双向 ESD 保护二极管。ESD2CANFD24 的额  
定消散接触 ESD 冲击能力超过了 IEC 61000-4-2 标准  
所规定的最高水平±25kV 接触放电±25kV 气隙放  
。低动态电阻和低钳位电压支持针对瞬态事件提供  
系统级保护。这种保护很关键因为系统对安全应用的  
稳健性和可靠性要求很高。  
±25kV 接触放电  
±25kV 气隙放电  
• 经测试符IEC 61000-4-5  
24V 工作电压  
• 双ESD 保护  
2 通道器件通过单个组件实现完整ESD 保护  
• 低钳位电压可保护下游组件  
I/O = 2.5pF典型值)  
SOT-23 (DBZ) 小型、标准、通用封装  
• 引线式封装用于自动光学检(AOI)  
该器件具有每通道低 IO 电容和引脚排列以便适合两  
CAN 总线CANH CANL),防止因静电放电  
(ESD) 和其他瞬变造成损坏。此外ESD2CANFD24  
2.5pF型值更小线路电容适合 CAN、  
CANFDCAN SiC 和支持高达 10Mbps 数据速率的  
CAN-XL 应用。  
2 应用  
工业控制网络:  
ESD2CANFD24 采用引线式封装以便轻松实现直通  
式路由。  
DeviceNet IEC 62026-3  
CANopen CiA 301/302-2 EN 50325-4  
封装信息(1)  
封装尺寸标称值)  
器件型号  
封装  
ESD2CANFD24  
DBZSOT-2332.92mm × 1.30mm  
(1) 如需了解所有可用封装请参阅产品说明书末尾的可订购产品  
附录。  
CANH  
TXD  
RT/2  
Application  
CAN  
CAN  
Bus  
(for example,  
TRANSCEIVER  
MCU I/O)  
RT/2  
RXD  
CANL  
1
2
C
G
ESD2CANFD24  
3
ESD2CANFD24 典型应用  
本文档旨在为方便起见提供有TI 产品中文版本的信息以确认产品的概要。有关适用的官方英文版本的最新信息请访问  
www.ti.com其内容始终优先。TI 不保证翻译的准确性和有效性。在实际设计之前请务必参考最新版本的英文版本。  
English Data Sheet: SLVSH12  
 
 
 
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Table of Contents  
7.4 Device Functional Modes............................................9  
8 Application and Implementation..................................10  
8.1 Application Information............................................. 10  
8.2 Typical Application.................................................... 10  
9 Power Supply Recommendations................................12  
10 Layout...........................................................................12  
10.1 Layout Guidelines................................................... 12  
10.2 Layout Example...................................................... 12  
11 Device and Documentation Support..........................13  
11.1 Documentation Support.......................................... 13  
11.2 接收文档更新通知................................................... 13  
11.3 支持资源..................................................................13  
11.4 Trademarks............................................................. 13  
11.5 Electrostatic Discharge Caution..............................13  
11.6 术语表..................................................................... 13  
12 Mechanical, Packaging, and Orderable  
1 特性................................................................................... 1  
2 应用................................................................................... 1  
3 说明................................................................................... 1  
4 Revision History.............................................................. 2  
5 Pin Configuration and Functions...................................3  
6 Specifications.................................................................. 4  
6.1 绝对最大额定值...........................................................4  
6.2 ESD - JEDEC 规格............................................. 4  
6.3 ESD - IEC 规格...................................................4  
6.4 建议运行条件.............................................................. 4  
6.5 热性能信息..................................................................4  
6.6 电气特性......................................................................5  
6.7 Typical Characteristics ESD2CANFD24.................6  
7 Detailed Description........................................................8  
7.1 Overview.....................................................................8  
7.2 Functional Block Diagram...........................................8  
7.3 Feature Description.....................................................8  
Information.................................................................... 13  
4 Revision History  
DATE  
REVISION  
NOTES  
November 2022  
*
Initial Release  
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5 Pin Configuration and Functions  
IO  
IO  
1
2
3
GND  
Not to scale  
5-1. DBZ Package, 3-Pin SOT-23 (Top View)  
5-1. Pin Functions  
PIN  
TYPE(1)  
DESCRIPTION  
NAME  
IO  
NO.  
1, 2  
3
I/O  
G
ESD protected IO  
Connect to ground.  
GND  
(1) I = Input, O = Output, I/O = Input or Output, G = Ground, P = Power  
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6 Specifications  
6.1 绝对最大额定值  
在自然通风条件下的工作温度范围内测得除非另有说明(1)  
参数  
器件  
最小值  
最大值  
单位  
PPP  
IPP  
TA  
133  
3.5  
W
25°C IEC 61000-4-5 (tp 8/20µs)  
A
25°C IEC 61000-4-5 (tp 8/20µs)  
ESD2CANFD24  
-55  
-55  
-65  
150  
150  
155  
自然通风工作温度  
结温  
TJ  
°C  
Tstg  
贮存温度  
(1) 超出绝对最大额定值运行可能会对器件造成永久损坏。绝对最大额定值并不表示器件在这些条件下或在建议运行条件以外的任何其他条  
件下能够正常运行。如果超出建议运行条件但在绝对最大额定值范围内使用器件可能不会完全正常运行这可能影响器件的可靠性、  
功能和性能并缩短器件寿命。  
6.2 ESD - JEDEC 规格  
参数  
测试条件  
单位  
人体放电模(HBM)ANSI/ESDA/JEDEC JS-001 标准(1)  
充电器件模(CDM)JEDEC JS-002(2)  
± 2500  
V(ESD)  
V
静电放电  
± 1000  
(1) JEDEC JEP155 指出500V HBM 时能够在标ESD 控制流程下安全生产。  
(2) JEDEC JEP157 指出250V CDM 时能够在标ESD 控制流程下安全生产。  
6.3 ESD - IEC 规格  
TA = 25°C 条件下除非另有说明)  
参数  
测试条件  
器件  
单位  
±25000  
IEC 61000-4-2 接触放电所有引脚  
IEC 61000-4-2 空气间隙放电所有引脚  
V(ESD)  
ESD2CANFD24  
V
静电放电  
±25000  
6.4 建议运行条件  
在自然通风条件下的工作温度范围内测得除非另有说明)  
参数  
最小值  
-24  
标称值  
最大值  
24  
单位  
V
VIN  
TA  
输入电压  
-55  
150  
°C  
自然通风工作温度  
6.5 热性能信息  
ESD2CANFD24  
DBZ (SOT-23)  
3 引脚  
热指标(1)  
单位  
RθJA  
316.3  
°C/W  
°C/W  
°C/W  
°C/W  
°C/W  
°C/W  
结至环境热阻  
RθJC(top)  
RθJB  
170.7  
结至外壳顶部热阻  
结至电路板热阻  
156.2  
45.9  
ΨJT  
结至顶部特征参数  
155.1  
ΨJB  
结至电路板特征参数  
结至外壳底部热阻  
RθJC(bot)  
不适用  
(1) 有关新旧热指标的更多信息请参阅半导体IC 封装热指标应用报告。  
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6.6 电气特性  
TA = 25°C 条件下除非另有说明(1)  
参数  
测试条件  
器件  
最小值 典型值 最大值 单位  
VRWM  
ESD2CANFD24  
24  
35.5  
V
V
V
V
24  
25.5  
反向关断电压  
击穿电压(2)  
击穿电压(2)  
钳位电压(3)  
IIO = 10mAIO GND  
VBRF  
ESD2CANFD24  
ESD2CANFD24  
ESD2CANFD24  
VBRR  
-35.5  
-25.5  
IIO = 10mAIO GND  
VCLAMP  
37  
36  
IPP = 3.5Atp = 8/20µsIO GND  
IPP = 16ATLPIO GND GND 至  
IO  
钳位电压(4)  
VCLAMP  
ESD2CANFD24  
V
ILEAK  
RDYN  
CL  
ESD2CANFD24  
ESD2CANFD24  
ESD2CANFD24  
ESD2CANFD24  
-50  
5
0.45  
2.5  
50  
nA  
VIO = ±24VIO GND  
IO GND GND IO  
VIO = 0Vf = 1MHzVpp = 30mV  
TLP  
漏电流  
动态电阻(4)  
Ω
pF  
V
线路电容(5)  
4.2  
VHold  
30  
快速复位后的保持电压  
(1) 在每IO 通道上进行的测量  
(2) BRF VBRR 被定义为在器件锁存到快速复位状态之前分别在正向和负向方向上施±10mA 的电压  
V
(3) IEC 61000-4-5 器件承8/20μs 指数衰减波形的应力  
(4) 非重复电流脉冲、传输线路脉(TLP)方波脉冲ANSI / ESD STM5.5.1-2008  
(5) 在每个通道上IO 测量GND  
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6.7 Typical Characteristics ESD2CANFD24  
30  
27  
24  
21  
18  
15  
12  
9
30  
27  
24  
21  
18  
15  
12  
9
6
6
3
3
0
0
-3  
-3  
0
5
10  
15  
20 25  
Vclamp (V)  
30  
35  
40  
45  
0
5
10  
15  
20 25  
Vclamp (V)  
30  
35  
40  
45  
tp = 100 ns, Transmission Line Pulse (TLP)  
tp = 100 ns, Transmission Line Pulse (TLP)  
6-2. Negative TLP Curve  
6-1. Positive TLP Curve  
175  
150  
125  
100  
75  
Vclamp_ESD at 30ns = 27.3V  
50  
25  
0
-25  
-100  
0
100  
200  
300  
400  
500  
600  
700  
Time(ns)  
6-3. +8-kV Clamped IEC Waveform  
6-4. 8-kV Clamped IEC Waveform  
10  
8
2.3  
2.28  
2.26  
2.24  
2.22  
2.2  
6
4
2
2.18  
2.16  
2.14  
2.12  
2.1  
2.08  
2.06  
2.04  
2.02  
2
0
-2  
-4  
-6  
-8  
-10  
-25 -20 -15 -10  
-5  
0
VR (V)  
5
10  
15  
20  
25  
TA = 150 C  
ILEAK is less than 1 nA at -55 C and 25 C.  
-25 -20 -15 -10  
-5  
0
5
10  
15  
20  
25  
VR (V)  
6-5. Capacitance vs. Bias Voltage  
6-6. Leakage Current vs. Bias Voltage Across Temperature  
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6.7 Typical Characteristics ESD2CANFD24 (continued)  
40  
4
Voltage (V)  
Current (A)  
36  
32  
28  
24  
20  
16  
12  
8
3.6  
3.2  
2.8  
2.4  
2
1.6  
1.2  
0.8  
0.4  
0
4
0
-5  
0
5
10  
15  
20  
25  
30  
35  
40  
45  
Time (s)  
6-7. 8/20 μs Surge Response at 3.5 A  
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7 Detailed Description  
7.1 Overview  
The ESD2CANFD24 is a dual-channel ESD TVS diode in SOT-23 leaded package which is convenient for  
automatic optical inspection. This product offers IEC 61000-4-2 ±25-kV air-gap, ±25-kV contact ESD protection,  
and has a clamp circuit with a back-to-back TVS diode for bidirectional signal support. The 2.5 pF (typical) or  
less line capacitance of this ESD protection diode is suitable for CAN, CANFD, CAN SiC, and CAN-XL  
applications that can support data rates up to 10 Mbps. A typical application for this product is ESD circuit  
protection for CAN transceivers.  
7.2 Functional Block Diagram  
1
2
3
7.3 Feature Description  
The ESD2CANFD24 is a bidirectional TVS with a high ESD protection level. This device protects the circuit from  
ESD strikes up to ±25-kV contact and ±25-kV air-gap specified in the IEC 61000-4-2 standard. The device can  
also handle up to 3.5 A surge current (IEC 61000-4-5 8/20 µs). The I/O capacitance of 2.5-pF (typical) supports  
a data rate up to 10 Mbps. This clamping device has a small dynamic resistance, which makes the clamping  
voltage low when the device is actively protecting other circuits. For example, the clamping voltage is only 37 V  
when the device is taking 3.5 A transient surge current. The breakdown is bidirectional so this protection device  
is a good fit for CAN which is a differential signal. Low leakage allows the diode to conserve power when working  
below the VRWM. The temperature range of 55°C to +150°C makes this ESD device work at extensive  
temperatures in most environments. The leaded SOT-23 package is good for applications requiring automatic  
optical inspection (AOI).  
7.3.1 Temperature Range  
This device is qualified to operate from 55°C to +150°C.  
7.3.2 IEC 61000-4-2 ESD Protection  
The I/O pins can withstand ESD events of at least ±25-kV contact and ±25-kV air-gap in the leaded SOT-23  
package according to the IEC 61000-4-2 standard. An ESD-surge clamp diverts the current to ground.  
7.3.3 IEC 61000-4-5 Surge Protection  
The IO pins can withstand surge events up to 3.5 A (8/20 µs waveform). An ESD-surge clamp diverts this  
current to ground.  
7.3.4 IO Capacitance  
The capacitance between the I/O pins is 2.5 pF (typical) or less. This capacitance supports data rates for CAN,  
CANFD, CAN SiC, and CAN-XL up to 10 Mbps.  
7.3.5 Dynamic Resistance  
The IO pins feature an ESD clamp that has a low RDYN of 0.45 Ω (Pin 1 or Pin 2 to Pin 3) and 0.45 Ω (Pin 3 to  
Pin 1 or Pin 2) or less which prevents system damage during ESD events.  
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7.3.6 DC Breakdown Voltage  
The DC breakdown voltage between the IO pins is a minimum of ± 25.5 V. This protects sensitive equipment  
from surges above the reverse standoff voltage of ± 24 V.  
7.3.7 Ultra Low Leakage Current  
The IO pins feature an ultra-low leakage current of ± 50 nA (maximum) with a bias of ± 24 V.  
7.3.8 Clamping Voltage  
The IO pins feature an ESD clamp that is capable of clamping the voltage to 37 V (IPP = 3.5 A) and 36 V (IPP  
16 A for TLP).  
=
7.3.9 Industry Standard Leaded Packages  
This device features an industry standard SOT-23 (DBZ) leaded package for automatic optical inspection (AOI).  
7.4 Device Functional Modes  
The ESD2CANFD24 is a dual channel passive clamp that has low leakage during normal operation when the  
voltage between pin 1 or pin 2 and pin 3 is below VRWM, and activates when the voltage between pin 1 or pin 2  
and pin 3 goes above VBR. During IEC 61000-4-2 ESD events, transient voltages as high as ±25 kV can be  
clamped on either channel. When the voltages on the protected lines fall below the VHOLD, the device reverts  
back to the low leakage passive state.  
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8 Application and Implementation  
备注  
Information in the following applications sections is not part of the TI component specification, and TI  
does not warrant its accuracy or completeness. TIs customers are responsible for determining  
suitability of components for their purposes, as well as validating and testing their design  
implementation to confirm system functionality.  
8.1 Application Information  
The ESD2CANFD24 is a dual channel TVS diode which is used to provide a path to ground for dissipating ESD  
events on differential CAN signal lines. As the current from ESD passes through the TVS, only a small voltage  
drop is present across the diode. This is the voltage presented to the protected IC. The low RDYN of the triggered  
TVS holds this voltage, VCLAMP, to a safe level for the protected IC.  
8.2 Typical Application  
CANH  
TXD  
RT/2  
Application  
(for example,  
MCU I/O)  
CAN  
Bus  
CAN  
TRANSCEIVER  
RT/2  
RXD  
CANL  
1
2
C
G
ESD2CANFD24  
3
8-1. ESD2CANFD24 Typical Application  
8.2.1 Design Requirements  
For this design example, the ESD2CANFD24 is used to provide ESD protection for a CAN transceiver. 8-1  
lists the known design parameters for this application.  
8-1. Design Parameters for the ESD2CANFD24 Typical Application  
Design Parameter  
Diode configuration  
VIO differential signal range  
VRWM  
Value  
Bidirectional  
> ±1.5 V  
±24 V  
Data rate  
Up to 10 Mbps  
60 Ω  
RT/2  
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8.2.2 Detailed Design Procedure  
The ESD2CANFD24 has a VRWM of ±24 V. The bidirectional characteristic enables the signal integrity of the  
differential CAN lines to not be impacted by the diode. The low capacitance of 2.5 pF (typical) or less enables  
data rates up to 10 Mbps, which allows the designer to meet the requirements for CAN, CANFD, CAN SiC, and  
CAN-XL. The 60 split termination improves the electromagnetic emissions behavior of the network by filtering  
higher-frequency common-mode noise that may be present on the differential signal lines.  
8.2.3 Application Curves  
175  
150  
125  
100  
75  
Vclamp_ESD at 30ns = 27.3V  
50  
25  
0
-25  
-100  
0
100  
200  
300  
400  
500  
600  
700  
Time(ns)  
8-2. +8-kV Clamped IEC Waveform  
8-3. 8-kV Clamped IEC Waveform  
40  
36  
32  
28  
24  
20  
16  
12  
8
4
Voltage (V)  
Current (A)  
3.6  
3.2  
2.8  
2.4  
2
1.6  
1.2  
0.8  
0.4  
0
4
0
-5  
0
5
10  
15  
20  
Time (s)  
25  
30  
35  
40  
45  
8-4. 8/20 µs Surge Response at 3.5 A  
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9 Power Supply Recommendations  
This device is a passive TVS diode-based ESD protection device, therefore there is no requirement to power it.  
Ensure that the maximum voltage specifications for each pin are not violated.  
10 Layout  
10.1 Layout Guidelines  
The optimum placement of the device is as close to the connector as possible.  
EMI during an ESD event can couple from the trace being struck to other nearby unprotected traces,  
resulting in early system failures.  
The PCB designer must minimize the possibility of EMI coupling by keeping any unprotected traces away  
from the protected traces which are between the TVS and the connector.  
Route the protected traces as straight as possible.  
Eliminate any sharp corners on the protected traces between the TVS and the connector by using rounded  
corners with the largest radii possible.  
Electric fields tend to build up on corners, increasing EMI coupling.  
If pin 3 is connected to ground, use a thick and short trace for this return path.  
10.2 Layout Example  
This example is typical of a dual channel differential data pair application, such as CAN.  
IO1  
GND  
IO2  
= VIA to GND  
10-1. Routing with DBZ Package  
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11 Device and Documentation Support  
TI offers an extensive line of development tools. Tools and software to evaluate the performance of the device,  
generate code, and develop solutions are listed below.  
11.1 Documentation Support  
11.1.1 Related Documentation  
For related documentation, see the following:  
Texas Instruments, ESD Layout Guide user's guide  
Texas Instruments, ESD Protection Diodes EVM user's guide  
Texas Instruments, Generic ESD Evaluation Module user's guide  
Texas Instruments, Reading and Understanding an ESD Protection data sheet  
11.2 接收文档更新通知  
要接收文档更新通知请导航至 ti.com 上的器件产品文件夹。点击订阅更新 进行注册即可每周接收产品信息更  
改摘要。有关更改的详细信息请查看任何已修订文档中包含的修订历史记录。  
11.3 支持资源  
TI E2E支持论坛是工程师的重要参考资料可直接从专家获得快速、经过验证的解答和设计帮助。搜索现有解  
答或提出自己的问题可获得所需的快速设计帮助。  
链接的内容由各个贡献者“按原样”提供。这些内容并不构成 TI 技术规范并且不一定反映 TI 的观点请参阅  
TI 《使用条款》。  
11.4 Trademarks  
TI E2Eis a trademark of Texas Instruments.  
所有商标均为其各自所有者的财产。  
11.5 Electrostatic Discharge Caution  
This integrated circuit can be damaged by ESD. Texas Instruments recommends that all integrated circuits be handled  
with appropriate precautions. Failure to observe proper handling and installation procedures can cause damage.  
ESD damage can range from subtle performance degradation to complete device failure. Precision integrated circuits may  
be more susceptible to damage because very small parametric changes could cause the device not to meet its published  
specifications.  
11.6 术语表  
TI 术语表  
本术语表列出并解释了术语、首字母缩略词和定义。  
12 Mechanical, Packaging, and Orderable Information  
The following pages include mechanical, packaging, and orderable information. This information is the most  
current data available for the designated devices. This data is subject to change without notice and revision of  
this document. For browser-based versions of this data sheet, refer to the left-hand navigation.  
Copyright © 2022 Texas Instruments Incorporated  
Submit Document Feedback  
13  
Product Folder Links: ESD2CANFD24  
 
 
 
 
 
 
 
 
PACKAGE OPTION ADDENDUM  
www.ti.com  
2-Dec-2022  
PACKAGING INFORMATION  
Orderable Device  
Status Package Type Package Pins Package  
Eco Plan  
Lead finish/  
Ball material  
MSL Peak Temp  
Op Temp (°C)  
Device Marking  
Samples  
Drawing  
Qty  
(1)  
(2)  
(3)  
(4/5)  
(6)  
ESD2CANFD24DBZR  
ACTIVE  
SOT-23  
DBZ  
3
3000 RoHS & Green  
NIPDAU  
Level-1-260C-UNLIM  
-50 to 150  
2QO8  
Samples  
(1) The marketing status values are defined as follows:  
ACTIVE: Product device recommended for new designs.  
LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect.  
NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design.  
PREVIEW: Device has been announced but is not in production. Samples may or may not be available.  
OBSOLETE: TI has discontinued the production of the device.  
(2) RoHS: TI defines "RoHS" to mean semiconductor products that are compliant with the current EU RoHS requirements for all 10 RoHS substances, including the requirement that RoHS substance  
do not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, "RoHS" products are suitable for use in specified lead-free processes. TI may  
reference these types of products as "Pb-Free".  
RoHS Exempt: TI defines "RoHS Exempt" to mean products that contain lead but are compliant with EU RoHS pursuant to a specific EU RoHS exemption.  
Green: TI defines "Green" to mean the content of Chlorine (Cl) and Bromine (Br) based flame retardants meet JS709B low halogen requirements of <=1000ppm threshold. Antimony trioxide based  
flame retardants must also meet the <=1000ppm threshold requirement.  
(3) MSL, Peak Temp. - The Moisture Sensitivity Level rating according to the JEDEC industry standard classifications, and peak solder temperature.  
(4) There may be additional marking, which relates to the logo, the lot trace code information, or the environmental category on the device.  
(5) Multiple Device Markings will be inside parentheses. Only one Device Marking contained in parentheses and separated by a "~" will appear on a device. If a line is indented then it is a continuation  
of the previous line and the two combined represent the entire Device Marking for that device.  
(6)  
Lead finish/Ball material - Orderable Devices may have multiple material finish options. Finish options are separated by a vertical ruled line. Lead finish/Ball material values may wrap to two  
lines if the finish value exceeds the maximum column width.  
Important Information and Disclaimer:The information provided on this page represents TI's knowledge and belief as of the date that it is provided. TI bases its knowledge and belief on information  
provided by third parties, and makes no representation or warranty as to the accuracy of such information. Efforts are underway to better integrate information from third parties. TI has taken and  
continues to take reasonable steps to provide representative and accurate information but may not have conducted destructive testing or chemical analysis on incoming materials and chemicals.  
TI and TI suppliers consider certain information to be proprietary, and thus CAS numbers and other limited information may not be available for release.  
In no event shall TI's liability arising out of such information exceed the total purchase price of the TI part(s) at issue in this document sold by TI to Customer on an annual basis.  
OTHER QUALIFIED VERSIONS OF ESD2CANFD24 :  
Addendum-Page 1  
PACKAGE OPTION ADDENDUM  
www.ti.com  
2-Dec-2022  
Automotive : ESD2CANFD24-Q1  
NOTE: Qualified Version Definitions:  
Automotive - Q100 devices qualified for high-reliability automotive applications targeting zero defects  
Addendum-Page 2  
PACKAGE MATERIALS INFORMATION  
www.ti.com  
3-Dec-2022  
TAPE AND REEL INFORMATION  
REEL DIMENSIONS  
TAPE DIMENSIONS  
K0  
P1  
W
B0  
Reel  
Diameter  
Cavity  
A0  
A0 Dimension designed to accommodate the component width  
B0 Dimension designed to accommodate the component length  
K0 Dimension designed to accommodate the component thickness  
Overall width of the carrier tape  
W
P1 Pitch between successive cavity centers  
Reel Width (W1)  
QUADRANT ASSIGNMENTS FOR PIN 1 ORIENTATION IN TAPE  
Sprocket Holes  
Q1 Q2  
Q3 Q4  
Q1 Q2  
Q3 Q4  
User Direction of Feed  
Pocket Quadrants  
*All dimensions are nominal  
Device  
Package Package Pins  
Type Drawing  
SPQ  
Reel  
Reel  
A0  
B0  
K0  
P1  
W
Pin1  
Diameter Width (mm) (mm) (mm) (mm) (mm) Quadrant  
(mm) W1 (mm)  
ESD2CANFD24DBZR  
SOT-23  
DBZ  
3
3000  
180.0  
8.4  
2.9  
3.35  
1.35  
4.0  
8.0  
Q3  
Pack Materials-Page 1  
PACKAGE MATERIALS INFORMATION  
www.ti.com  
3-Dec-2022  
TAPE AND REEL BOX DIMENSIONS  
Width (mm)  
H
W
L
*All dimensions are nominal  
Device  
Package Type Package Drawing Pins  
SOT-23 DBZ  
SPQ  
Length (mm) Width (mm) Height (mm)  
210.0 185.0 35.0  
ESD2CANFD24DBZR  
3
3000  
Pack Materials-Page 2  
PACKAGE OUTLINE  
DBZ0003A  
SOT-23 - 1.12 mm max height  
S
C
A
L
E
4
.
0
0
0
SMALL OUTLINE TRANSISTOR  
C
2.64  
2.10  
1.12 MAX  
1.4  
1.2  
B
A
0.1 C  
PIN 1  
INDEX AREA  
1
0.95  
(0.125)  
3.04  
2.80  
1.9  
3
(0.15)  
NOTE 4  
2
0.5  
0.3  
3X  
0.10  
0.01  
(0.95)  
TYP  
0.2  
C A B  
0.25  
GAGE PLANE  
0.20  
0.08  
TYP  
0.6  
0.2  
TYP  
SEATING PLANE  
0 -8 TYP  
4214838/D 03/2023  
NOTES:  
1. All linear dimensions are in millimeters. Any dimensions in parenthesis are for reference only. Dimensioning and tolerancing  
per ASME Y14.5M.  
2. This drawing is subject to change without notice.  
3. Reference JEDEC registration TO-236, except minimum foot length.  
4. Support pin may differ or may not be present.  
www.ti.com  
EXAMPLE BOARD LAYOUT  
DBZ0003A  
SOT-23 - 1.12 mm max height  
SMALL OUTLINE TRANSISTOR  
PKG  
3X (1.3)  
1
3X (0.6)  
SYMM  
3
2X (0.95)  
2
(R0.05) TYP  
(2.1)  
LAND PATTERN EXAMPLE  
SCALE:15X  
SOLDER MASK  
OPENING  
SOLDER MASK  
OPENING  
METAL UNDER  
SOLDER MASK  
METAL  
0.07 MIN  
ALL AROUND  
0.07 MAX  
ALL AROUND  
NON SOLDER MASK  
DEFINED  
SOLDER MASK  
DEFINED  
(PREFERRED)  
SOLDER MASK DETAILS  
4214838/D 03/2023  
NOTES: (continued)  
4. Publication IPC-7351 may have alternate designs.  
5. Solder mask tolerances between and around signal pads can vary based on board fabrication site.  
www.ti.com  
EXAMPLE STENCIL DESIGN  
DBZ0003A  
SOT-23 - 1.12 mm max height  
SMALL OUTLINE TRANSISTOR  
PKG  
3X (1.3)  
1
3X (0.6)  
SYMM  
3
2X(0.95)  
2
(R0.05) TYP  
(2.1)  
SOLDER PASTE EXAMPLE  
BASED ON 0.125 THICK STENCIL  
SCALE:15X  
4214838/D 03/2023  
NOTES: (continued)  
6. Laser cutting apertures with trapezoidal walls and rounded corners may offer better paste release. IPC-7525 may have alternate  
design recommendations.  
7. Board assembly site may have different recommendations for stencil design.  
www.ti.com  
重要声明和免责声明  
TI“按原样提供技术和可靠性数据(包括数据表)、设计资源(包括参考设计)、应用或其他设计建议、网络工具、安全信息和其他资源,  
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这些资源可供使用 TI 产品进行设计的熟练开发人员使用。您将自行承担以下全部责任:(1) 针对您的应用选择合适的 TI 产品,(2) 设计、验  
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Copyright © 2023,德州仪器 (TI) 公司  

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