FDH400T50A [TI]
0.2A, 200V, SILICON, SIGNAL DIODE, DO-35;
| 型号： | FDH400T50A |
| 厂家： | 
TEXAS INSTRUMENTS |
| 描述： | 0.2A, 200V, SILICON, SIGNAL DIODE, DO-35 二极管 |
| 文件： | 总2页 (文件大小：36K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Discr ete P OWER & Sign a l
Tech n ologies
N
FDH/FDLL 400 / 444
COLOR BAND MARKING
DEVICE
FDLL400
FDLL444
1ST BAND 2ND BAND
BROWN
BROWN
VIOLET
GRAY
LL-34
DO-35
THE PLACEMENT OF THE EXPANSION GAP
HAS NO RELATIONSHIP TO THE LOCATION
OF THE CATHODE TERMINAL
High Voltage General Purpose Diode
Sourced from Process 1J.
Absolute Maximum Ratings*
TA = 25°C unless otherwise noted
Symbol
Parameter
Value
Units
WIV
Working Inverse Voltage
FDH/FDLL 400
FDH/FDLL 444
150
100
200
V
V
mA
IO
Average Rectified Current
DC Forward Current
IF
500
600
mA
mA
Recurrent Peak Forward Current
if
Peak Forward Surge Current
Pulse width = 1.0 second
if(surge)
1.0
4.0
A
A
Pulse width = 1.0 microsecond
Storage Temperature Range
-65 to +200
°C
Tstg
TJ
Operating Junction Temperature
175
°C
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 200 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics
TA = 25°C unless otherwise noted
Symbol
Characteristic
Max
Units
FDH/FDLL 400 / 444
PD
Total Device Dissipation
Derate above 25°C
Thermal Resistance, Junction to Ambient
500
3.33
300
mW
mW/°C
°C/W
Rθ
JA
High Voltage General Purpose Diode
(continued)
Electrical Characteristics
TA = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min
Max Units
BV
Breakdown Voltage FDH/FDLL444
150
200
V
V
IR = 100 µA
IR = 100 µA
FDH/FDLL400
IR
Reverse Current
Forward Voltage
FDH/FDLL444
VR = 100 V
VR = 100 V, TA = 150°C
VR = 150 V
VR = 150 V, TA = 150°C
IF = 200 mA
IF = 300 mA
IF = 200 mA
IF = 300 mA
VR = 0, f = 1.0 MHz
50
nA
µA
nA
µA
V
V
V
V
pF
pF
100
100
100
1.1
1.2
1.0
1.1
2.5
2.0
FDH/FDLL400
VF
FDH/FDLL444
FDH/FDLL400
CO
Diode Capacitance FDH/FDLL444
FDH/FDLL400
TRR
Reverse Recovery Time
FDH/FDLL444
60
50
nS
nS
IF = IR = 30 mA, Irr = 3.0 mA,
RL = 100 Ω
IF = IR = 30 mA, Irr = 3.0 mA,
RL = 100 Ω
FDH/FDLL400
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