FX001 [TI]
具有 100mA LDO 和灵活外部元件的 4.5V 至 28V 双路同步降压控制器 | RGE | 24 | -40 to 85;
| 型号： | FX001 |
| 厂家： | 
TEXAS INSTRUMENTS |
| 描述： | 具有 100mA LDO 和灵活外部元件的 4.5V 至 28V 双路同步降压控制器 | RGE | 24 | -40 to 85 开关 控制器 开关式稳压器 开关式控制器 电源电路 开关式稳压器或控制器 |
| 文件： | 总37页 (文件大小：1165K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
TPS51125A
www.ti.com
SLUS976E –SEPTEMBER 2009–REVISED MARCH 2012
Dual-Synchronous, Step-Down Controller with Out-of-Audio™ Operation
and 100-mA LDOs for Notebook System Power
Check for Samples: TPS51125A
1
FEATURES
APPLICATIONS
2
•
•
•
•
•
Wide Input Voltage Range: 5.5 V to 28 V
Output Voltage Range: 2 V to 5.5 V
Built-in 100-mA 5-V/3.3-V LDO with Switches
Built-in 1% 2-V Reference Output
•
•
•
Notebook Computers
I/O Supplies
System Power Supplies
DESCRIPTION
With/Without Out-of-Audio™ Mode Selectable
Light Load and PWM only Operation
The TPS51125A is a cost effective, dual-synchronous
buck controller targeted for notebook system power
supply solutions. It provides 5-V and 3.3-V LDOs and
requires few external components. The 270-kHz
VCLK output can be used to drive an external charge
pump, generating gate drive voltage for the load
switches without reducing the main converter’s
efficiency. The TPS51125A supports high efficiency,
fast transient response and provides a combined
power-good signal. Out-of-Audio™ mode light-load
operation enables low acoustic noise at much higher
efficiency than conventional forced PWM operation.
Adaptive on-time D-CAP™ control provides
convenient and efficient operation. The part operates
with supply input voltages ranging from 5.5 V to 28 V
and supports output voltages from 2 V to 5.5 V. The
TPS51125A is available in a 24-pin QFN package
and is specified from -40°C to 85°C ambient
temperature range.
•
•
Internal 1.6-ms Voltage Servo Softstart
Adaptive On-Time Control Architecture with
Four Selectable Frequency Setting
•
•
•
•
•
•
4500 ppm/°C RDS(on) Current Sensing
Built-In Output Discharge
Power Good Output
Built-in OVP/UVP/OCP
Thermal Shutdown (Non-latch)
QFN24 (RGE)
Table 1. Differences between the TPS51125 and TPS51125A
TPS51125
TPS51125A
VREG5: at least 33 µF
VREG5: 10 µF or larger (X5R or X7R)
VREG3: at most 10 µF
(1 µF acceptable at no load)
VREG3: 10 µF or larger (X5R or X7R)
(1 µF acceptable at no load)
LDO Output Capacitance Requirement
VREF: 0.22 µF to 1 µF
VREF: 0.22 µF to 1 µF (X5R or X7R)
1
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of
Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.
2
Out-of-Audio, D-CAP are trademarks of Texas Instruments.
PRODUCTION DATA information is current as of publication date.
Products conform to specifications per the terms of the Texas
Instruments standard warranty. Production processing does not
necessarily include testing of all parameters.
Copyright © 2009–2012, Texas Instruments Incorporated
TPS51125A
SLUS976E –SEPTEMBER 2009–REVISED MARCH 2012
www.ti.com
ECO PLAN
ORDERING INFORMATION
OUTPUT
SUPPLY
MIN
QUANTITY
TA
PACKAGE
PART NUMBER
PINS
Tape -and-
Reel
TPS51125ARGET
TPS51125ARGER
250
Green
(RoHS and
no Sb/Br)
Plastic Quad Flat Pack
(QFN)
-40°C to 85°C
24
Tape -and-
Reel
3000
ABSOLUTE MAXIMUM RATINGS(1)
over operating free-air temperature range (unless otherwise noted)
PARAMETER
VALUE
-0.3 to 36
-0.3 to 30
-2.0 to 30
-5.0 to 30
-0.3 to 6
UNIT
VBST1, VBST2
VIN
LL1, LL2
(1)
Input voltage range
LL1, LL2, pulse width < 20 ns
(2)
VBST1, VBST2
V
EN0, ENTRIP1, ENTRIP2, VFB1, VFB2, VO1, VO2, TONSEL, SKIPSEL
DRVH1, DRVH2
-0.3 to 6
-1.0 to 36
-0.3 to 6
(1)
(2)
Output voltage range
DRVH1, DRVH2
PGOOD, VCLK, VREG3, VREG5, VREF, DRVL1, DRVL2
Junction temperature range
-0.3 to 6
TJ
-40 to 125
-55 to 150
°C
Tstg
Storage temperature
(1) Stresses beyond those listed under "absolute maximum ratings" may cause permanent damage to the device. These are stress ratings
only and functional operation of the device at these or any other conditions beyond those indicated under "recommended operating
conditions" is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
(2) Voltage values are with respect to the corresponding LLx terminal.
DISSIPATION RATINGS
2-oz. trace and copper pad with solder.
DERATING FACTOR ABOVE TA
PACKAGE
TA < 25°C POWER RATING
TA = 85°C POWER RATING
= 25°C
24 pin RGE(1)
1.85 W
18.5 mW/°C
0.74 W
(1) Enhanced thermal conductance by 3x3 thermal vias beneath thermal pad.
RECOMMENDED OPERATING CONDITIONS
over operating free-air temperature range (unless otherwise noted)
PARAMETER
MIN
5.5
TYP
MAX
UNIT
Supply voltage
VIN
28
34
Input voltage range
VBST1, VBST2
VBST1, VBST2 (wrt LLx)
-0.1
-0.1
5.5
EN0, ENTRIP1, ENTRIP2, VFB1, VFB2, VO1, VO2,
TONSEL, SKIPSEL
-0.1
5.5
V
Output voltage range
DRVH1, DRVH2
-0.8
-0.1
-1.8
-0.1
-0.1
-40
34
5.5
28
DRVH1, DRVH2 (wrt LLx)
LL1, LL2
VREF, VREG3, VREG5
PGOOD, VCLK, DRVL1, DRVL2
Operating free-air temperature
5.5
5.5
85
TA
°C
2
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Product Folder Link(s): TPS51125A
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SLUS976E –SEPTEMBER 2009–REVISED MARCH 2012
ELECTRICAL CHARACTERISTICS
over operating free-air temperature range, VIN = 12 V (unless otherwise noted)
PARAMETER
CONDITIONS
MIN
TYP
MAX
UNIT
Supply Current
VIN current, T A = 25°C, no load, VO1 = 0 V, VO2
= 0 V, EN0=open, ENTRIPx = 5 V,
VFB1 = VFB2 = 2.05 V
IVIN1
VIN supply current1
VIN supply current2
VO1 current
0.55
1
mA
μA
VIN current, TA = 25°C, no load, VO1 = 5 V, VO2 =
3.3 V, EN0=open, ENTRIPx = 5 V,
VFB1 = VFB2 = 2.05 V
IVIN2
4
0.8
12
6.5
1.5
VO1 current, TA = 25°C, no load, VO1 = 5 V, VO2
= 3.3 V, EN0=open, ENTRIPx = 5 V,
VFB1 = VFB2 = 2.05 V
IVO1
mA
VO2 current, TA = 25°C, no load, VO1 = 5 V, VO2
= 3.3 V, EN0=open, ENTRIPx = 5 V,
VFB1 = VFB2 = 2.05 V
IVO2
VO2 current
100
VIN current, TA = 25°C, no load,
EN0 = 1.2 V, ENTRIPx = 0 V
μA
IVINSTBY
VIN standby current
VIN shutdown current
95
10
150
25
VIN current, TA = 25°C, no load,
EN0 = ENTRIPx = 0 V
IVINSDN
VREF Output
IVREF = 0 A
1.98
2.00
2.00
2.02
2.03
VVREF
VREF output voltage
V
V
-5 μA < IVREF < 100 μA
1.97
VREG5 Output
VO1 = 0 V, IVREG5 < 100 mA, TA = 25°C
VO1 = 0 V, IVREG5 < 100 mA, 6.5 V < VIN < 28 V
VO1 = 0 V, IVREG5 < 50 mA, 5.5 V < VIN < 28 V
VO1 = 0 V, VREG5 = 4.5 V
4.8
4.75
4. 75
100
5
5
5.2
5.25
5.25
250
4.85
0.3
VVREG5
VREG5 output voltage
5
IVREG5
VREG5 output current
Switch over threshold
5 V SW RON
175
4.7
0.25
1
mA
V
Turns on
4.55
0.15
VTH5VSW
Hysteresis
R5VSW
VO1 = 5 V, IVREG5 = 100 mA
3
Ω
VREG3 Output
VO2 = 0 V, IVREG3 < 100 mA, TA= 25°C
VO2 = 0 V, IVREG3 < 100 mA, 6.5 V < VIN < 28 V
VO2 = 0 V, IVREG3 < 50 mA, 5.5 V < VIN < 28 V
VO2 = 0 V, VREG3 = 3 V
3.2
3.13
3.13
100
3.05
0.1
3.33
3.33
3.33
175
3.15
0.2
3.46
3.5
VVREG3
VREG3 output voltage
V
3.5
IVREG3
VREG3 output current
Switch over threshold
3 V SW RON
250
3.25
0.25
4
mA
V
Turns on
VTH3VSW
R3VSW
Hysteresis
VO2 = 3.3 V, IVREG3 = 100 mA
1.5
Ω
Internal Reference Voltage
VIREF
VVFB
IVFB
Internal reference voltage
IVREF = 0 A, beginning of ON state
FB voltage, IVREF = 0 A, skip mode
1.95
1.98
2.00
1.98
2.01
2.01
2.04
2.07
V
(1)
VFB regulation voltage
FB voltage, IVREF = 0 A, OOA mode
2.035
2.00
(1)
FB voltage, IVREF = 0 A, continuous conduction
VFB input current
VFBx = 2.0 V, TA= 25°C
-20
20
nA
(1) Ensured by design. Not production tested.
Copyright © 2009–2012, Texas Instruments Incorporated
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ELECTRICAL CHARACTERISTICS (continued)
over operating free-air temperature range, VIN = 12 V (unless otherwise noted)
PARAMETER
CONDITIONS
MIN
TYP
MAX
UNIT
VOUT Discharge
IDischg
VOUT discharge current
ENTRIPx = 0 V, VOx = 0.5 V
10
60
mA
Output Drivers
Source, VBSTx - DRVHx = 100 mV
Sink, VDRVHx - LLx = 100 mV
Source, VVREG5 - DRVLx = 100 mV
Sink, VDRVLx = 100 mV
4
1.5
4
8
RDRVH
RDRVL
TD
DRVH resistance
DRVL resistance
Dead time
4
Ω
8
1.5
10
30
4
DRVHx-off to DRVLx-on
ns
DRVLx-off to DRVHx-on
Clock Output
VCLKH
High level voltage
Low level voltage
Clock frequency
IVCLK = -10 mA, VO1 = 5 V, TA = 25 °C
IVCLK = 10 mA, VO1 = 5 V, TA = 25 °C
TA = 25 °C
4.84
175
0.7
4.92
0.06
270
V
VCLKL
0.12
325
fCLK
kHz
Internal BST Diode
VFBST
Forward voltage
VBST leakage current
VVREG5-VBSTx, IF = 10 mA, TA = 25 °C
VBSTx = 34 V, LLx = 28 V, TA = 25 °C
0.8
0.1
0.9
1
V
IVBSTLK
μA
Duty and Frequency Control
TON11
CH1 on time 1
CH1 on time 2
CH1 on time 3
CH1 on time 4
CH2 on time 1
CH2 on time 2
CH2 on time 3
CH2 on time 4
Minimum on time
Minimum off time
VIN = 12 V, VO1 = 5 V, 200 kHz setting
VIN = 12 V, VO1 = 5 V, 245 kHz setting
VIN = 12 V, VO1 = 5 V, 300 kHz setting
VIN = 12 V, VO1 = 5 V, 365 kHz setting
VIN = 12 V, VO2 = 3.3 V, 250 kHz setting
VIN = 12 V, VO2 = 3.3 V, 305 kHz setting
VIN = 12 V, VO2 = 3.3 V, 375 kHz setting
VIN = 12 V, VO2 = 3.3 V, 460 kHz setting
TA = 25 °C
2080
1700
1390
1140
1100
900
TON12
TON13
TON14
TON21
ns
TON22
TON23
730
TON24
600
TON(min)
TOFF(min)
Softstart
TSS
80
TA = 25 °C
300
Internal SS time
Internal soft start
1.1
1.6
2.1
ms
Powergood
PG in from lower
PG in from higher
92.50%
95% 97.50%
102.50
%
107.50
VTHPG
PG threshold
105%
%
PG hysteresis
PGOOD = 0.5 V
Delay for PG in
2.50%
5
5%
12
7.50%
670
IPGMAX
TPGDEL
PG sink current
PG delay
mA
350
510
μs
4
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SLUS976E –SEPTEMBER 2009–REVISED MARCH 2012
ELECTRICAL CHARACTERISTICS (continued)
over operating free-air temperature range, VIN = 12 V (unless otherwise noted)
PARAMETER
CONDITIONS
MIN
TYP
MAX
UNIT
Logic Threshold and Setting Conditions
Shutdown
0.4
VEN0
EN0 setting voltage
EN0 current
Enable, VCLK = off
Enable, VCLK = on
VEN0 = 0.2 V
0.8
1.6
V
2.4
2
3.5
5
2.5
450
60
IEN0
μA
VEN0 = 1.5 V
1
1.75
400
30
Shutdown
350
10
ENTRIP1, ENTRIP2
threshold
VEN
mV
Hysteresis
200 kHz/250 kHz
245 kHz/305 kHz
300 kHz/375 kHz
365 kHz/460 kHz
PWM only
1.5
2.1
3.6
1.9
2.7
4.7
VTONSEL
TONSEL setting voltage
SKIPSEL setting voltage
V
1.5
2.1
VSKIPSEL
Auto skip
1.9
2.7
OOA auto skip
Protection: Current Sense
IENTRIP
ENTRIPx source current
VENTRIPx = 920 mV, TA= 25°C
On the basis of 25°C(2)
9.4
10
10.6
μA
ENTRIPx current temperature
coefficient
TCIENTRIP
4500
ppm/°C
((VENTRIPx-GND/9)-24 mV -VGND-LLx) voltage,
VENTRIPx-GND = 920 mV
VOCLoff
VOCL(max)
VZC
OCP comparator offset
Maximum OCL setting
-8
185
0
205
0
8
225
5
VENTRIPx = 5 V
mV
V
Zero cross detection
comparator offset
VGND-LLx voltage
-5
(2)
VENTRIP
Current limit threshold
VENTRIPx-GND voltage,
0.515
2
Protection: UVP & OVP
VOVP
OVP trip threshold
OVP detect
110%
55%
115%
2
120%
65%
TOVPDEL
OVP prop delay
μs
UVP detect
Hysteresis
60%
10%
32
VUVP
Output UVP trip threshold
TUVPDEL
TUVPEN
UVLO
Output UVP prop delay
Output UVP enable delay
20
40
μs
1.4
2
2.6
ms
Wake up
4.1
4.2
0.43
4.3
VUVVREG5
VREG5 UVLO threshold
VREG3 UVLO threshold
Hysteresis
0.38
0.48
V
(2)
VUVVREG3
Shutdown
VO2-1
Thermal Shutdown
(2)
Shutdown temperature
150
10
TSDN
Thermal shutdown threshold
°C
(2)
Hysteresis
(2) Ensured by design. Not production tested.
Copyright © 2009–2012, Texas Instruments Incorporated
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DEVICE INFORMATION
Table 2. TERMINAL FUNCTIONS TABLE
TERMINAL
NAME NO.
VIN
I/O
DESCRIPTION
16
15
I
High voltage power supply input for 5-V/3.3-V LDO.
Ground.
GND
-
3.3-V power supply output. Connect 10-μF or larger, high-quality X5R or X7R ceramic capacitor to
Power GND near the device. A 1-μF ceramic capacitor is acceptable when not loaded.
VREG3
8
17
3
O
O
O
5-V power supply output. Connect 10-μF or larger, high-quality X5R or X7R ceramic capacitor to
Power GND near the device.
VREG5
VREF
2-V reference voltage output. Connect 220-nF to 1-μF, high-quality X5R or X7R ceramic capacitor to
Signal GND near the device.
Master enable input.
Open : LDOs on, and ready to turn on VCLK and switcher channels.
EN0
13
I/O
620 kΩ to GND : enable both LDOs, VCLK off and ready to turn on switcher channels. Power
consumption is almost the same as the case of VCLK = ON.
GND : disable all circuit
ENTRIP1
ENTRIP2
VO1
1
6
Channel 1 and Channel 2 enable and OCL trip setting pins.Connect resistor from this pin to GND to
set threshold for synchronous RDS(on) sense. Short to ground to shutdown a switcher channel.
I/O
I/O
24
7
Output connection to SMPS. These terminals work as fixed voltage inputs and output discharge
inputs. VO1 and VO2 also work as 5 V and 3.3 V switch over return power input respectively.
VO2
VFB1
2
SMPS feedback inputs. Connect with feedback resistor divider.
I
VFB2
5
PGOOD
23
O
Power Good window comparator output for channel 1 and 2. (Logical AND)
Selection pin for operation mode:
OOA auto skip : Connect to VREG3 or VREG5
Auto skip : Connect to VREF
SKIPSEL
TONSEL
14
I
I
PWM only : Connect to GND
On-time adjustment pin.
365 kHz/460 kHz setting : connect to VREG5
300 kHz/375 kHz setting : connect to VREG3
245 kHz/305 kHz setting : connect to VREF
200 kHz/250 kHz setting : connect to GND
Low-side N-channel MOSFET driver outputs. GND referenced drivers.
4
DRVL1
DRVL2
VBST1
VBST2
DRVH1
DRVH2
LL1
19
12
22
9
O
I
Supply input for high-side N-channel MOSFET driver (boost terminal).
High-side N-channel MOSFET driver outputs. LL referenced drivers.
Switch node connections for high-side drivers, current limit and control circuitry.
270-kHz clock output for 15-V charge pump.
21
10
20
11
18
O
I
LL2
VCLK
O
6
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SLUS976E –SEPTEMBER 2009–REVISED MARCH 2012
QFN Package (top view)
24
23
20
19
22
21
1
2
3
4
5
6
18 VCLK
17 VREG5
16 VIN
ENTRIP1
VFB1
VREF
TONSEL
VFB2
TPS51125ARGE
15 GND
14 SKIPSEL
13 EN0
ENTRIP2
9
10
7
8
11
12
Typical Application Diagram
13 kW
20 kW
20 kW
220 nF
30 kW
VIN
VIN
130 kW
130 kW
VIN
10 mF x 2
5.5 V
to
10 mF x 2
6
5
4
3
2
1
28 V
7
8
9
VO2
VO1 24
100 kW
10 mF
VREG3
VBST2
PGOOD 23
VBST1 22
DRVH1 21
LL1 20
VREG5
0.1 mF
0.1 mF
3.3 mF
TPS51125ARGE
PowerPAD
3.3 mF
5.1 W
5.1 W
VO2
VO1
5 V
10 DRVH2
11 LL2
3.3 V
330 mF
330 mF
12 DRVL2
DRVL1 19
13 14 15 16 17 18
EN0
VREG5
VO1
100 nF
100 nF
15 V
10 mF
VREF
VIN
620 kW
100 nF
100 nF
1 mF
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Functional Block Diagram
8
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SLUS976E –SEPTEMBER 2009–REVISED MARCH 2012
Switcher Controller Block
Copyright © 2009–2012, Texas Instruments Incorporated
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TYPICAL CHARACTERISTICS
VIN SUPPLY CURRENT1
vs
VIN SUPPLY CURRENT1
vs
JUNCTION TEMPERATURE
INPUT VOLTAGE
800
700
600
500
400
300
200
100
0
800
700
600
500
400
300
200
100
0
-50
0
50
100
150
5
10
15
20
25
T
- Junction Temperature - °C
J
V
- Input Voltage - V
IN
Figure 1.
Figure 2.
VIN SUPPLY CURRENT2
vs
VIN SUPPLY CURRENT2
vs
JUNCTION TEMPERATURE
INPUT VOLTAGE
9
8
7
6
5
4
3
2
1
0
9
8
7
6
5
4
3
2
1
0
5
10
15
20
25
-50
0
50
100
150
V
- Input Voltage - V
IN
T
- Junction Temperature - °C
J
Figure 3.
Figure 4.
10
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TYPICAL CHARACTERISTICS (continued)
VIN STANDBY CURRENT
vs
VIN STANDBY CURRENT
vs
INPUT VOLTAGE
JUNCTION TEMPERATURE
250
200
150
100
50
250
200
150
100
50
0
0
-
50
5
10
15
20
25
0
50
100
150
T
- Junction Temperature - °C
V
- Input Voltage - V
J
IN
Figure 5.
Figure 6.
VIN SHUTDOWN CURRENT
vs
VIN SHUTDOWN CURRENT
vs
JUNCTION TEMPERATURE
INPUT VOLTAGE
25
20
15
10
5
25
20
15
10
5
0
0
5
10
15
20
25
-50
0
50
100
150
V
- Input Voltage - V
T
- Junction Temperature - °C
IN
J
Figure 7.
Figure 8.
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TYPICAL CHARACTERISTICS (continued)
CURRENT SENSE CURRENT
vs
VCLK FREQUENCY
vs
JUNCTION TEMPERATURE
JUNCTION TEMPERATURE
14
13
12
11
10
9
325
300
275
250
225
200
175
8
7
6
-50
0
50
100
150
-50
0
50
100
150
T - Junction Temperature - °C
J
T
- Junction Temperature - °C
J
Figure 9.
Figure 10.
SWITCHING FREQUENCY
vs
SWITCHING FREQUENCY
vs
INPUT VOLTAGE
INPUT VOLTAGE
500
500
TONSEL = GND
TONSEL = 2V
400
300
200
100
0
400
300
200
100
0
CH2
CH1
CH2
CH1
6
8
10 12 14 16 18 20 22 24 26
VIN - Input Voltage - V
6
8
10 12 14 16 18 20 22 24 26
VIN - Input Voltage - V
Figure 11.
Figure 12.
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TYPICAL CHARACTERISTICS (continued)
SWITCHING FREQUENCY
vs
SWITCHING FREQUENCY
vs
INPUT VOLTAGE
INPUT VOLTAGE
500
400
300
200
100
0
500
400
300
200
100
TONSEL = 3.3V
CH2
CH1
TONSEL = 5V
CH2
CH1
0
6
8
10 12 14 16 18 20 22 24 26
VIN - Input Voltage - V
6
8
10 12 14 16 18 20 22 24 26
VIN - Input Voltage - V
Figure 13.
Figure 14.
SWITCHING FREQUENCY
vs
SWITCHING FREQUENCY
vs
OUTPUT CURRENT
OUTPUT CURRENT
500
400
300
200
100
0
500
400
300
200
100
0
TONSEL = GND
TONSEL = 2V
CH2 PWM Only
CH1 PWM Only
CH2 PWM Only
CH1 PWM Only
CH1 OOA
CH2 Auto-skip
CH2 OOA
CH2 Auto-skip
CH2 OOA
CH1 OOA
CH1 Auto-skip
1 10
CH1 Auto-skip
1 10
0.001
0.01
0.1
0.001
0.01
0.1
IOUT - Output Current - A
IOUT - Output Current - A
Figure 15.
Figure 16.
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TYPICAL CHARACTERISTICS (continued)
SWITCHING FREQUENCY
vs
SWITCHING FREQUENCY
vs
OUTPUT CURRENT
OUTPUT CURRENT
500
400
300
200
100
0
500
400
300
200
100
0
TONSEL = 3.3V
TONSEL = 5V
CH2 PWM Only
CH2 PWM Only
CH1 PWM Only
CH1 PWM Only
CH2 Auto-skip
CH2 Auto-skip
CH2 OOA
CH1 OOA
CH2 OOA
CH1 OOA
CH1 Auto-skip
1
CH1 Auto-skip
1
0.001
0.01
0.1
10
0.001
0.01
0.1
10
IOUT - Output Current - A
IOUT - Output Current - A
Figure 17.
Figure 18.
OVP/UVP THRESHOLD VOLTAGE
vs
VREG5 OUTPUT VOLTAGE
vs
JUNCTION TEMPERATURE
OUTPUT CURRENT
150
5.05
5.00
4.95
4.90
140
130
120
110
100
90
80
70
60
50
40
-50
0
50
100
150
T
- Junction Temperature - °C
J
0
20
40
60
80
100
I
- VREG5 Output Current - mA
VREG5
Figure 19.
Figure 20.
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TYPICAL CHARACTERISTICS (continued)
VREG3 OUTPUT VOLTAGE
vs
VREF OUTPUT VOLTAGE
vs
OUTPUT CURRENT
OUTPUT CURRENT
3.35
2.020
2.015
2.010
2.005
2.000
1.995
1.990
1.985
1.980
3.3
3.25
3.2
0
20
40
60
80
100
0
20
40
60
80
100
I
- VREG3 Output Current - mA
VREG3
I
- VREF Output Current - mA
VREF
Figure 21.
Figure 22.
5-V OUTPUT VOLTAGE
vs
3.3-V OUTPUT VOLTAGE
vs
OUTPUT CURRENT
OUTPUT CURRENT
5.075
5.050
5.025
5.000
4.975
4.950
3.360
OOA
OOA
3.330
3.300
3.270
3.240
Auto-skip
PWM Only
Auto-skip
PWM Only
0.001
0.01
0.1
1
10
0.001
0.01
0.1
1
10
IOUT1 - 5-V Output Current - A
IOUT2 - 3.3-V Output Current - A
Figure 23.
Figure 24.
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TYPICAL CHARACTERISTICS (continued)
5-V OUTPUT VOLTAGE
vs
3.3-V OUTPUT VOLTAGE
vs
INPUT VOLTAGE
INPUT VOLTAGE
5.075
5.050
5.025
5.000
4.975
4.950
3.360
3.330
3.300
3.270
3.240
IO = 0A
IO = 6A
IO = 0A
IO = 6A
6
8
10 12 14 16 18 20 22 24 26
VIN - Input Voltage - V
6
8
10 12 14 16 18 20 22 24 26
VIN - Input Voltage - V
Figure 25.
Figure 26.
5-V EFFICIENCY
vs
3.3-V EFFICIENCY
vs
OUTPUT CURRENT
OUTPUT CURRENT
100
80
60
40
20
0
100
80
60
40
20
0
Auto-skip
Auto-skip
VIN=8V
VIN=8V
VIN=12V
VIN=20V
VIN=12V
VIN=20V
OOA
OOA
PWM Only 5-V Switcher ON
PWM Only
0.01
0.001
0.01
0.1
1
10
0.001
0.1
1
10
IOUT2 - 3.3-V Output Current - A
IOUT1 - 5-V Output Current - A
Figure 27.
Figure 28.
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TYPICAL CHARACTERISTICS (continued)
5-V Load Transient Response
3.3-V Load Transient Response
V
OUT2
(100mV/div)
V
OUT1
(100mV/div)
I
(5A/div)
I
(5A/div)
IND
IND
I
(5A/div)
I
(5A/div)
OUT2
OUT1
Figure 29.
Figure 30.
5-V Startup Waveforms
3.3-V Startup Waveforms
ENTRIP2 (2V/div)
ENTRIP1 (2V/div)
V
OUT1
(2V/div)
V
OUT2
(2V/div)
PGOOD (5V/div)
PGOOD (5V/div)
Figure 31.
Figure 32.
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TYPICAL CHARACTERISTICS (continued)
5-V Switchover Waveforms
3.3-V Switchover Waveforms
VREG5 (200mV/div)
VREG3 (200mV/div)
V
OUT2
(200mV/div)
V
OUT1
(200mV/div)
Figure 33.
5-V Soft-stop Waveforms
Figure 34.
3.3-V Soft-stop Waveforms
ENTRIP1 (5V/div)
ENTRIP2 (5V/div)
V
(2V/div)
OUT1
V
OUT2
(2V/div)
PGOOD (5V/div)
DRVL1 (5V/div)
PGOOD (5V/div)
DRVL2 (5V/div)
Figure 35.
Figure 36.
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APPLICATION INFORMATION
PWM Operations
The main control loop of the switch mode power supply (SMPS) is designed as an adaptive on-time pulse width
modulation (PWM) controller. It supports a proprietary D-CAP™ mode. D-CAP™ mode does not require external
compensation circuit and is suitable for low external component count configuration when used with appropriate
amount of ESR at the output capacitor(s).
At the beginning of each cycle, the synchronous top MOSFET is turned on, or becomes ‘ON’ state. This
MOSFET is turned off, or becomes ‘OFF’ state, after internal one shot timer expires. This one shot is determined
by VIN and VOUT to keep frequency fairly constant over input voltage range, hence it is called adaptive on-time
control. The MOSFET is turned on again when the feedback point voltage, VFB, decreased to match with internal
2-V reference. The inductor current information is also monitored and should be below the over current threshold
to initiate this new cycle. Repeating operation in this manner, the controller regulates the output voltage. The
synchronous bottom or the “rectifying” MOSFET is turned on at the beginning of each ‘OFF’ state to keep the
conduction loss minimum.The rectifying MOSFET is turned off before the top MOSFET turns on at next switching
cycle or when inductor current information detects zero level. In the auto-skip mode or the OOA skip mode, this
enables seamless transition to the reduced frequency operation at light load condition so that high efficiency is
kept over broad range of load current.
Adaptive On-Time Control and PWM Frequency
TPS51125A does not have a dedicated oscillator on board. However, the part runs with pseudo-constant
frequency by feed-forwarding the input and output voltage into the on-time, one-shot timer. The on-time is
controlled inverse proportional to the input voltage and proportional to the output voltage so that the duty ratio will
be kept as VOUT/VIN technically with the same cycle time. The frequencies are set by TONSEL terminal
connection as Table 3.
Table 3. TONSEL Connection and Switching Frequency
SWITCHING FREQUENCY
TONSEL CONNECTION
CH1
CH2
GND
VREF
200 kHz
245 kHz
300 kHz
365 kHz
250 kHz
305 kHz
375 kHz
460 kHz
VREG3
VREG5
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Loop Compensation
From small-signal loop analysis, a buck converter using D-CAPTM mode can be simplified as below.
VIN
R1
DRVH
DRVL
Lx
IL
PWM
Control
logic
&
VFB
Ic
Io
+
Driver
+
R2
2V
ESR
Co
Vc
RL
Voltage Divider
Switching Modulator
Output Capacitor
Figure 37. Simplifying the Modulator
The output voltage is compared with internal reference voltage after divider resistors, R1 and R2. The PWM
comparator determines the timing to turn on high-side MOSFET. The gain and speed of the comparator is high
enough to keep the voltage at the beginning of each on cycle substantially constant. For the loop stability, the
0dB frequency, f0, defined below need to be lower than 1/4 of the switching frequency.
f
1
SW
f =
£
0
2p´ESR ´C
4
O
(1)
As f0 is determined solely by the output capacitor's characteristics, loop stability of D-CAPTM mode is determined
by the capacitor's chemistry. For example, specialty polymer capacitors (SP-CAP) have Co in the order of
several 100 μF and ESR in range of 10 mΩ. These will make f0 in the order of 100 kHz or less and the loop will
be stable. However, ceramic capacitors have f0 at more than 700 kHz, which is not suitable for this operational
mode.
Ramp Signal
The TPS51125A adds a ramp signal to the 2-V reference in order to improve its jitter performance. As described
in the previous section, the feedback voltage is compared with the reference information to keep the output
voltage in regulation. By adding a small ramp signal to the reference, the S/N ratio at the onset of a new
switching cycle is improved. Therefore the operation becomes less jitter and stable. The ramp signal is controlled
to start with -20mV at the beginning of ON-cycle and to become 0 mV at the end of OFF-cycle in steady state. By
using this scheme, the TPS51125A improve jitter performance without sacrificing the reference accuracy.
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Light Load Condition in Auto-Skip Operation
The TPS51125A automatically reduces switching frequency at light load conditions to maintain high efficiency.
This reduction of frequency is achieved smoothly and without increase of VOUT ripple. Detail operation is
described as follows. As the output current decreases from heavy load condition, the inductor current is also
reduced and eventually comes to the point that its ‘valley’ touches zero current, which is the boundary between
continuous conduction and discontinuous conduction modes. The rectifying MOSFET is turned off when this zero
inductor current is detected. As the load current further decreased, the converter runs in discontinuous
conduction mode and it takes longer and longer to discharge the output capacitor to the level that requires next
‘ON’ cycle. The ON time is kept the same as that in the heavy load condition. In reverse, when the output current
increase from light load to heavy load, switching frequency increases to the preset value as the inductor current
reaches to the continuous conduction. The transition load point to the light load operation IOUT(LL) (i.e. the
threshold between continuous and discontinuous conduction mode) can be calculated as follows;
V
- V
´ V
(
)
OUT OUT
V
IN
1
IN
I
=
´
OUT(LL)
2 ´L ´ f
(2)
where f is the PWM switching frequency.
Switching frequency versus output current in the light load condition is a function of L, VIN and VOUT, but it
decreases almost proportional to the output current from the IOUT(LL) given above. For example, it will be 60 kHz
at IOUT(LL)/5 if the frequency setting is 300 kHz.
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Out-of-Audio™ Light-Load Operation
Out-of-Audio™ (OOA) light-load mode is a unique control feature that keeps the switching frequency above
acoustic audible frequencies toward virtually no load condition while maintaining best of the art high conversion
efficiency. When the Out-of-Audio™ operation is selected, OOA control circuit monitors the states of both
MOSFET and force to change into the ‘ON’ state if both of MOSFETs are off for more than 32 μs. This means
that the top MOSFET is turned on even if the output voltage is higher than the target value so that the output
capacitor is tends to be overcharged.
The OOA control circuit detects the over-voltage condition and begins to modulate the on time to keep the output
voltage regulated. As a result, the output voltage becomes 0.5% higher than normal light-load operation.
Enable and Soft Start
EN0 is the control pin of VREG5, VREG3 and VREF regulators. Bring this node down to GND disables those
three regulators and minimize the shutdown supply current to 10 μA. Pulling this node up to 3.3 V or 5 V will turn
the three regulators on to standby mode. The two switch mode power supplies (channel-1, channel-2) become
ready to enable at this standby mode. The TPS51125A has an internal, 1.6 ms, voltage servo softstart for each
channel. When the ENTRIPx pin becomes higher than the enable threshold voltage, which is typically 430 mV,
an internal DAC begins ramping up the reference voltage to the PWM comparator. Smooth control of the output
voltage is maintained during start up. As TPS51125A shares one DAC with both channels, if ENTRIPx pin
becomes higher than the enable threshold voltage while another channel is starting up, soft start is postponed
until another channel soft start has completed. If both of ENTRIP1 and ENTRIP2 become higher than the enable
threshold voltage at a same time (within 60 μs), both channels start up at same time.
Table 4. Enabling State
EN0
GND
ENTRIP1
ENTRIP2
VREF
Off
VREG5
Off
VREG3
Off
CH1
Off
Off
On
Off
On
Off
On
Off
On
CH2
Off
Off
Off
On
On
Off
Off
On
On
VCLK
Off
Don’t Care
Off
Don’t Care
Off
R to GND
R to GND
R to GND
R to GND
Open
On
On
On
On
On
On
On
On
On
On
Off
On
Off
On
On
Off
Off
On
On
On
Off
On
On
On
On
Off
Off
Off
On
On
Off
Open
On
Off
On
On
On
Open
Off
On
On
On
Off
Open
On
On
On
On
On
VREG5/VREG3 Linear Regulators
There are two sets of 100-mA standby linear regulators which outputs 5 V and 3.3 V, respectively. The VREG5
serves as the main power supply for the analog circuitry of the device and provides the current for gate drivers.
The VREG3 is intended mainly for auxiliary 3.3-V supply for the notebook system during standby mode.
Add high-quality X5R or X7R ceramic capacitor with a value of 10 μF or larger placed close to the VREG5 and
VREG3 pins to stabilize LDOs. For VREG3, a 1-μF ceramic capacitor is acceptable when not loaded.
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VREG5 Switch Over
When the VO1 voltage becomes higher than 4.7 V AND channel-1 internal powergood flag is generated, internal
5-V LDO regulator is shut off and the VREG5 output is connected to VO1 by internal switch over MOSFET. The
510-μs powergood delay helps a switch over without glitch.
VREG3 Switch Over
When the VO2 voltage becomes higher than 3.15 V AND channel-2 internal powergood flag is generated,
internal 3.3-V LDO regulator is shut off and the VREG3 output is connected to VO2 by internal switch over
MOSFET. The 510-μs powergood delay helps a switch over without glitch.
Powergood
The TPS51125A has one powergood output that indicates 'high' when both switcher outputs are within the
targets (AND gated). The powergood function is activated with 2-ms internal delay after ENTRIPx goes high. If
the output voltage becomes within +/-5% of the target value, internal comparators detect power good state and
the powergood signal becomes high after 510-μs internal delay. Therefore PGOOD goes high around 2.5 ms
after ENTRIPx goes high. If the output voltage goes outside of +/-10% of the target value, the powergood signal
becomes low after 2-μs internal delay. The powergood output is an open drain output and is needed to be pulled
up outside.
Also note that, in the case of Auto-skip or Out-of-Audio™ mode, if the output voltage goes +10% above the
target value and the power-good signal flags low, then the loop attempts to correct the output by turning on the
low-side driver (forced PWM mode). After the feedback voltage returns to be within +5% of the target value and
the power-good signal goes high, the controller returns back to auto-skip mode or Out-of-Audio™ mode.
Output Discharge Control
When ENTRIPx is low, the TPS51125A discharges outputs using internal MOSFET which is connected to VOx
and GND. The current capability of these MOSFETs is limited to discharge slowly.
Low-Side Driver
The low-side driver is designed to drive high current low RDS(on) N-channel MOSFET(s). The drive capability is
represented by its internal resistance, which are 4 Ω for VREG5 to DRVLx and 1.5 Ω for DRVLx to GND. A dead
time to prevent shoot through is internally generated between top MOSFET off to bottom MOSFET on, and
bottom MOSFET off to top MOSFET on. 5-V bias voltage is delivered from VREG5 supply. The instantaneous
drive current is supplied by an input capacitor connected between VREG5 and GND. The average drive current
is equal to the gate charge at Vgs = 5 V times switching frequency. This gate drive current as well as the high-
side gate drive current times 5 V makes the driving power which need to be dissipated from TPS51125A
package.
High-Side Driver
The high-side driver is designed to drive high current, low RDS(on) N-channel MOSFET(s). When configured as a
floating driver, 5-V bias voltage is delivered from VREG5 supply. The average drive current is also calculated by
the gate charge at Vgs = 5 V times switching frequency. The instantaneous drive current is supplied by the flying
capacitor between VBSTx and LLx pins. The drive capability is represented by its internal resistance, which are
4 Ω for VBSTx to DRVHx and 1.5Ω for DRVHx to LLx.
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VCLK for Charge Pump
270-kHz clock signal can be used for charge pump circuit to generate approximately 15-V dc voltage. The clock
signal becomes available when EN0 becomes higher than 2.4 V or open state. Example of control circuit is
shown in Figure 38. Note that the clock driver uses VO1 as its power supply. Regardless of enable or disable of
VCLK, power consumption of the TPS51125A is almost the same. Therefore even if VCLK is not used, one can
let EN0 pin open or supply logic ‘high’, as shown in Figure 38, and let VCLK pin open. This approach further
reduces the external part count.
3.3V
TPS51125A
13 EN0
TPS51125A
Control
Input
13 EN0
Control
Input
GND
15
GND
15
(a) Control by MOSFET Switch
(b) Control by Logic
Figure 38. Control Example of EN0 Master Enable
VCLK 18
VO1 (5V)
100nF
100nF
-
15V/10mA
D2
D0
D1
D4
1uF
100nF
100nF
PGND
PGND
PGND
Figure 39. 15-V / 10-mA Charge Pump Configuration
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Current Protection
TPS51125A has cycle-by-cycle over current limiting control. The inductor current is monitored during the ‘OFF’
state and the controller keeps the ‘OFF’ state during the inductor current is larger than the over current trip level.
In order to provide both good accuracy and cost effective solution, TPS51125A supports temperature
compensated MOSFET RDS(on) sensing. ENTRIPx pin should be connected to GND through the trip voltage
setting resistor, RTRIP. ENTRIPx terminal sources ITRIP current, which is 10 μA typically at room temperature, and
the trip level is set to the OCL trip voltage VTRIP as below. Note that the VTRIP is limited up to about 205 mV
internally.
R
kW ´I mA
TRIP ( ) TRIP ( )
V mV =
TRIP ( )
- 24 mV
( )
9
(3)
External leakage current to ENTRIPx pin should be minimized to obtain accurate OCL trip voltage.
The inductor current is monitored by the voltage between GND pin and LLx pin so that LLx pin should be
connected to the drain terminal of the bottom MOSFET properly. Itrip has 4500 ppm/°C temperature slope to
compensate the temperature dependency of the RDS(on). GND is used as the positive current sensing node so
that GND should be connected to the proper current sensing device, i.e. the source terminal of the bottom
MOSFET.
As the comparison is done during the ‘OFF’ state, VTRIP sets valley level of the inductor current. Thus, the load
current at over current threshold, IOCP, can be calculated in Equation 4.
V
- V
´ V
(
)
OUT OUT
V
IN
V
I
V
TRIP
1
IN
TRIP
RIPPLE
I
=
+
=
+
´
OCP
R
2
R
2´L ´ f
DS on
DS on
( )
( )
(4)
In an overcurrent condition, the current to the load exceeds the current to the output capacitor thus the output
voltage tends to fall down. Eventually, it ends up with crossing the under voltage protection threshold and
shutdown both channels.
Over/Under Voltage Protection
TPS51125A monitors a resistor divided feedback voltage to detect over and under voltage. When the feedback
voltage becomes higher than 115% of the target voltage, the OVP comparator output goes high and the circuit
latches as the top MOSFET driver OFF and the bottom MOSFET driver ON.
Also, TPS51125A monitors VOx voltage directly and if it becomes greater than 5.75 V the TPS51125A turns off
the top MOSFET driver.
When the feedback voltage becomes lower than 60% of the target voltage, the UVP comparator output goes
high and an internal UVP delay counter begins counting. After 32 μs, TPS51125A latches OFF both top and
bottom MOSFETs drivers, and shut off both drivers of another channel. This function is enabled after 2 ms
following ENTRIPx has become high.
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UVLO Protection
TPS51125A has VREG5 under voltage lock out protection (UVLO). When the VREG5 voltage is lower than
UVLO threshold voltage both switch mode power supplies are shut off. This is non-latch protection. When the
VREG3 voltage is lower than (VO2 - 1 V), both switch mode power supplies are also shut off.
Thermal Shutdown
TPS51125A monitors the temperature of itself. If the temperature exceeds the threshold value (typically 150°C),
TPS51125A is shut off including LDOs. This is non-latch protection.
External Parts Selection
The external components selection is much simple in D-CAP™ Mode.
1. Determine Output Voltage
The output voltage is programmed by the voltage-divider resistor, R1 and R2 shown in Figure 37. R1 is
connected between VFBx pin and the output, and R2 is connected betwen the VFBx pin and GND.
Recommended R2 value is from 10 kΩ to 20 kΩ. Determine R1 using equation as below.
V
(
- 2.0
)
OUT
R1=
´R2
2.0
(5)
2. Choose the Inductor
The inductance value should be determined to give the ripple current of approximately 1/4 to 1/2 of maximum
output current. Larger ripple current increases output ripple voltage and improves S/N ratio and helps stable
operation.
V
(
- V
´ V
)
V
(
- V
´ V
)
OUT
OUT
IN max
OUT
OUT
V
IN max
IN max
(
IN max
(
)
)
1
3
L =
´
=
´
I
´ f
V
I
´ f
IND ripple
(
OUT max
(
)
(
)
)
(
)
(6)
The inductor also needs to have low DCR to achieve good efficiency, as well as enough room above peak
inductor current before saturation. The peak inductor current can be estimated as follows.
V
(
- VOUT ´ VOUT
)
IN max
(
)
V
1
TRIP
I
=
+
´
IND peak
(
)
R
L ´ f
V
IN max
DS on
( )
(
)
(7)
3. Choose the Output Capacitor(s)
Organic semiconductor capacitor(s) or specialty polymer capacitor(s) are recommended. Determine ESR to meet
required ripple voltage. A quick approximation is as shown in Equation 8.
V
´20 mV ´ 1-D
( ) (
20 mV ´L ´ f
( )
2 V
( )
)
OUT
ESR =
=
2 V ´I
( )
RIPPLE
where
•
•
D is the duty cycle
the required output ripple slope is approximately 20 mV per TSW (switching period) in terms of VFB terminal
voltage
(8)
4. Choose the Low-Side MOSFET
It is highly recommended that the low-side MOSFET should have an integrated Schottky barrier diode, or an
external Schottky barrier diode in parallel to achieve stable operation.
26
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Product Folder Link(s): TPS51125A
TPS51125A
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SLUS976E –SEPTEMBER 2009–REVISED MARCH 2012
Layout Considerations
Certain points must be considered before starting a layout work using the TPS51125A.
•
TPS51125A has only one GND pin and special care of GND trace design makes operation stable, especially
when both channels operate. Group GND terminals of output voltage divider of both channels and the VREF
capacitor as close as possible, connect them to an inner GND plane with PowerPad, overcurrent setting
resistor and EN0 pull-down resistor as shown in the thin GND line of Figure 40. This trace is named Signal
Ground (SGND). Group ground terminals of VIN capacitor(s), VOUT capacitor(s) and source of low-side
MOSFETs as close as possible, and connect them to another GND plane with GND pin of the device, GND
terminal of VREG3 and VREG5 capacitors and 15-V charge-pump circuit as shown in the bold GND line of
Figure 40. This trace is named Power Ground (PGND). SGND should be connected to PGND at the middle
point between ground terminal of VOUT capacitors.
•
Inductor, VOUT capacitor(s), VIN capacitor(s) and MOSFETs are the power components and should be
placed on one side of the PCB (solder side). Power components of each channel should be at the same
distance from the TPS51125A. Other small signal parts should be placed on another side (component side).
Inner GND planes above should shield and isolate the small signal traces from noisy power lines.
•
•
PCB trace defined as LLx node, which connects to source of high-side MOSFET, drain of low-side MOSFET
and high-voltage side of the inductor, should be as short and wide as possible.
High-quality X5R or X7R ceramic bypass capacitor of following capacitance value should be placed close to
the device and traces should be no longer than 10 mm.
–
–
–
VREG5: 10 μF or larger
VREG3: 10 μF or larger (1 μF is acceptable when not loaded.)
VREF: 220 nF to 1 μF
•
•
Connect the overcurrent setting resistors from ENTRIPx to SGND and close to the device, right next to the
device if possible.
The discharge path (VOx) should have a dedicated trace to the output capacitor; separate from the output
voltage sensing trace. When LDO5 is switched over Vo1 trace should be 1.5 mm with no loops. When LDO3
is switched over and loaded Vo2 trace should also be 1.5 mm with no loops. There is no restriction for just
monitoring Vox. Make the feedback current setting resistor (the resistor between VFBx to SGND) close to the
device. Place on the component side and avoid vias between this resistor and the device.
•
•
Connections from the drivers to the respective gate of the high-side or the low-side MOSFET should be as
short as possible to reduce stray inductance. Use 0.65-mm (25 mils) or wider trace and via(s) of at least 0.5
mm (20 mils) diameter along this trace.
All sensitive analog traces and components such as VOx, VFBx, VREF, GND, EN0, ENTRIPx, PGOOD,
TONSEL and SKIPSEL should be placed away from high-voltage switching nodes such as LLx, DRVLx,
DRVHx and VCLK nodes to avoid coupling.
•
•
Traces for VFB1 and VFB2 should be short and laid apart each other to avoid channel to channel
interference.
In order to effectively remove heat from the package, prepare thermal land and solder to the package’s
thermal pad. Three by three or more vias with a 0.33-mm (13 mils) diameter connected from the thermal land
to the internal ground plane should be used to help dissipation. This thermal land underneath the package
should be connected to SGND, and should NOT be connected to PGND.
Copyright © 2009–2012, Texas Instruments Incorporated
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Product Folder Link(s): TPS51125A
TPS51125A
SLUS976E –SEPTEMBER 2009–REVISED MARCH 2012
www.ti.com
SGND
220 nF
VIN
VIN
5
3
2
VFB2
VREF
VFB1
VOUT2
VOUT1
DRVL2
DRVL1
12
19
TPS51125A
VREG5
GND
VREG3
PowerPAD
PGND
PGND
17
15
8
15 V
OUT
10 mF
10 mF
Charge
Pump
VCLK
SGND
Figure 40. GND system of DC/DC converter using the TPS51125A
Driver and switch node traces are shown for CH1 only.
*
TPS51125A
CH1 Vout divider
Top Layer
DRVH1*
LL1*
CVREF
DRVL1*
CVREG5
Connection to GND island
Connection to GND
Connection of Vout
Through hole
CH2 Vout divider
Connection to
GND island
CVREG3
Inner Layer
GND
GND slai nd
Cout
L
HS-MOSFET
Vout1
To CH1 Vout divider
To VO1
LS-MOSFET
Cin
VIN
GND
To VO2
Cin
To CH2 Vout divider
Vout2
HS-MOSFET
L
Bottom Layer
Cout
LS-MOSFET
Figure 41. PCB Layout Design
28
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Product Folder Link(s): TPS51125A
TPS51125A
www.ti.com
SLUS976E –SEPTEMBER 2009–REVISED MARCH 2012
Application Circuit
SGND
R1
13kW
R2
20kW
R3
20kW
R4
30kW
C6
0.22mF
R5
130kW
R6
130kW
3.3V/100mA
SGND
VREF
SGND
VIN
VIN
6
5
4
3
2
1
VIN
5.5 ~ 28V
C1
10mF
C2
10mF
C8
10mF
C9
10mF
7
8
9
VO2
VO1 24
R8
100kW VREG5
C3
10mF
VREG3
VBST2
PGOOD 23
VBST1 22
DRVH1 21
LL1 20
PGND
PGND
L2
PGND
C7
0.1mF
Q1
IRF7821
C4
0.1mF
R7
5.1W
TPS51125ARGE
(QFN24)
R9
5.1W
Q3
IRF7821
L1
3.3mH
3.3mH
10 DRVH2
11 LL2
VO2
3.3V/8A
VO1
5V/8A
PowerPAD
C10
POSCAP
330mF
C5
POSCAP
330mF
Q2
FDS6690AS
Q4
FDS6690AS
12 DRVL2
DRVL1 19
VO2_GND
VO1_GND
13
14
15
16
17
18
PGND
PGND
PGND
PGND
SGND
VREG5
EN0
5V/100mA
15V/10mA
S1
C11
10mF
C13
100nF
C15
100nF
R10
620kW
D1
D3
VO1
VREF
D2
D4
C16
1uF
C12
100nF
SGND
C14
100nF
PGND
PGND
PGND
Figure 42. 5-V/8-A, 3.3-V/8-A Application Circuit (245-kHz/305-kHz Setting)
Table 5. List of Materials for 5-V/8-A, 3.3-V/8-A Application Circuit
SYMBOL
C1, C2, C8, C9
C3, C11
SPECIFICATION
10 μ F, 25 V
MANUFACTURER
Taiyo Yuden
TDK
PART NUMBER
TMK325BJ106MM
C2012X5R0J106K
6TPE330ML
10 μF, 6.3 V
C5, C10
330 μF, 6.3 V, 25 mΩ
Sanyo
3.3 μH, 15.6 A, 5.92
mΩ
L1, L2
TOKO
FDA1055-3R3M
Q1, Q3
Q2, Q4(1)
30 V, 9.5 mΩ
30 V, 12 mΩ
IR
IRF7821
Fairchild
FDS6690AS
(1) Please use MOSFET with integrated Schottky barrier diode (SBD) for low side, or add SBD in parallel
with normal MOSFET.
Copyright © 2009–2012, Texas Instruments Incorporated
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www.ti.com
REVISION HISTORY
Changes from Revision B (September, 2009) to Revision A
Page
•
•
Added Table 1 ...................................................................................................................................................................... 1
Added Figure 41 ................................................................................................................................................................. 28
Changes from Revision A (January 2010) to Revision B
Page
•
•
Changed LDO Output Capacitance Requirement table from "at least" to "at most" ............................................................ 1
Changed VIN standby current value from 250 µA to 150 µA. .............................................................................................. 3
Changes from Revision B (September 2009) to Revision C
Page
•
•
Added note to table ............................................................................................................................................................... 5
Added an updated Switcher Controller Block diagram. ........................................................................................................ 9
Changes from Revision C (April 2011) to Revision D
Page
•
•
Added an updated Switcher Controller Block diagram. ........................................................................................................ 9
Changed bulletted duty cycle description. .......................................................................................................................... 26
Changes from Revision D (June 2011) to Revision E
Page
•
Added Input voltage range parameter LL1, LL2, pulse width < 20 ns with a value of -5.0 V to 30 V. ................................. 2
30
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Product Folder Link(s): TPS51125A
PACKAGE OPTION ADDENDUM
www.ti.com
15-Mar-2012
PACKAGING INFORMATION
Status (1)
Eco Plan (2)
MSL Peak Temp (3)
Samples
Orderable Device
Package Type Package
Drawing
Pins
Package Qty
Lead/
Ball Finish
(Requires Login)
TPS51125ARGER
TPS51125ARGET
ACTIVE
ACTIVE
VQFN
VQFN
RGE
RGE
24
24
3000
250
Green (RoHS
& no Sb/Br)
CU NIPDAU Level-2-260C-1 YEAR
Green (RoHS
& no Sb/Br)
CU NIPDAU Level-2-260C-1 YEAR
(1) The marketing status values are defined as follows:
ACTIVE: Product device recommended for new designs.
LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect.
NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design.
PREVIEW: Device has been announced but is not in production. Samples may or may not be available.
OBSOLETE: TI has discontinued the production of the device.
(2) Eco Plan - The planned eco-friendly classification: Pb-Free (RoHS), Pb-Free (RoHS Exempt), or Green (RoHS & no Sb/Br) - please check http://www.ti.com/productcontent for the latest availability
information and additional product content details.
TBD: The Pb-Free/Green conversion plan has not been defined.
Pb-Free (RoHS): TI's terms "Lead-Free" or "Pb-Free" mean semiconductor products that are compatible with the current RoHS requirements for all 6 substances, including the requirement that
lead not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, TI Pb-Free products are suitable for use in specified lead-free processes.
Pb-Free (RoHS Exempt): This component has a RoHS exemption for either 1) lead-based flip-chip solder bumps used between the die and package, or 2) lead-based die adhesive used between
the die and leadframe. The component is otherwise considered Pb-Free (RoHS compatible) as defined above.
Green (RoHS & no Sb/Br): TI defines "Green" to mean Pb-Free (RoHS compatible), and free of Bromine (Br) and Antimony (Sb) based flame retardants (Br or Sb do not exceed 0.1% by weight
in homogeneous material)
(3) MSL, Peak Temp. -- The Moisture Sensitivity Level rating according to the JEDEC industry standard classifications, and peak solder temperature.
Important Information and Disclaimer:The information provided on this page represents TI's knowledge and belief as of the date that it is provided. TI bases its knowledge and belief on information
provided by third parties, and makes no representation or warranty as to the accuracy of such information. Efforts are underway to better integrate information from third parties. TI has taken and
continues to take reasonable steps to provide representative and accurate information but may not have conducted destructive testing or chemical analysis on incoming materials and chemicals.
TI and TI suppliers consider certain information to be proprietary, and thus CAS numbers and other limited information may not be available for release.
In no event shall TI's liability arising out of such information exceed the total purchase price of the TI part(s) at issue in this document sold by TI to Customer on an annual basis.
Addendum-Page 1
PACKAGE MATERIALS INFORMATION
www.ti.com
14-Jul-2012
TAPE AND REEL INFORMATION
*All dimensions are nominal
Device
Package Package Pins
Type Drawing
SPQ
Reel
Reel
A0
B0
K0
P1
W
Pin1
Diameter Width (mm) (mm) (mm) (mm) (mm) Quadrant
(mm) W1 (mm)
TPS51125ARGER
TPS51125ARGER
TPS51125ARGET
TPS51125ARGET
VQFN
VQFN
VQFN
VQFN
RGE
RGE
RGE
RGE
24
24
24
24
3000
3000
250
330.0
330.0
180.0
180.0
12.4
12.4
12.4
12.4
4.25
4.3
4.25
4.3
1.15
1.1
8.0
8.0
8.0
8.0
12.0
12.0
12.0
12.0
Q2
Q2
Q2
Q2
4.3
4.3
1.1
250
4.25
4.25
1.15
Pack Materials-Page 1
PACKAGE MATERIALS INFORMATION
www.ti.com
14-Jul-2012
*All dimensions are nominal
Device
Package Type Package Drawing Pins
SPQ
Length (mm) Width (mm) Height (mm)
TPS51125ARGER
TPS51125ARGER
TPS51125ARGET
TPS51125ARGET
VQFN
VQFN
VQFN
VQFN
RGE
RGE
RGE
RGE
24
24
24
24
3000
3000
250
367.0
370.0
195.0
210.0
367.0
355.0
200.0
185.0
35.0
55.0
45.0
35.0
250
Pack Materials-Page 2
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