INA290A4IDCKR [TI]
INAx290 2.7-V to 120-V, 1.1-MHz, Ultra-Precise Current Sense Amplifier;
| 型号： | INA290A4IDCKR |
| 厂家： | 
TEXAS INSTRUMENTS |
| 描述： | INAx290 2.7-V to 120-V, 1.1-MHz, Ultra-Precise Current Sense Amplifier |
| 文件： | 总27页 (文件大小：1274K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
INA290, INA2290
SBOS961A – JUNE 2020 – REVISED SEPTEMBER 2020
INAx290 2.7-V to 120-V, 1.1-MHz, Ultra-Precise Current Sense Amplifier
1 Features
3 Description
•
•
•
Wide common-mode voltage:
– Operational voltage: 2.7 V to 120 V
– Survival voltage: −20 V to +122 V
Excellent CMRR:
– 160-dB DC
– 85-dB AC at 50 kHz
Accuracy
The INAx290 is an ultra-precise current sense
amplifier that can measure voltage drops across shunt
resistors over a wide common-mode range from 2.7 V
to 120 V. It is in a highly space-efficient SC-70
package with a PCB footprint of only 2.0 mm × 2.1
mm. The ultra-precise current measurement accuracy
is achieved thanks to the combination of an ultra-low
offset voltage of ±12 µV (maximum), a small gain
error of ±0.1% (maximum), and a high DC CMRR of
160 dB (typical). The INAx290 is not only designed for
DC current measurement, but also for high-speed
applications (like fast overcurrent protection, for
example) with a high bandwidth of 1.1 MHz (at gain of
20 V/V) and an 85-dB AC CMRR (at 50 kHz).
– Gain:
•
•
Gain error: ±0.1% (maximum)
Gain drift: ±5 ppm/°C (maximum)
– Offset:
•
•
Offset voltage: ±12 µV (maximum)
Offset drift: ±0.2 µV/°C (maximum)
The INAx290 provides the capability to make ultra-
precise current measurements by sensing the voltage
drop across a shunt resistor over a wide common-
mode range from 2.7 V to 120 V. The INAx290
devices come in highly space-efficient packages. The
single channel INA290 device is featured in the SC-70
package while the dual channel INA2290 device is
available in the VSSOP-8 package.
•
Available gains:
– INAx290A1: 20 V/V
– INAx290A2: 50 V/V
– INAx290A3: 100 V/V
– INAx290A4: 200 V/V
– INAx290A5: 500 V/V
High bandwidth: 1.1 MHz
Slew rate: 2 V/µs
•
•
•
Device Information
Quiescent current: 370 µA(per channel)
PART NUMBER
INA290
INA2290(2)
PACKAGE(1)
BODY SIZE (NOM)
2.00 mm × 1.25 mm
3.00 mm × 3.00 mm
2 Applications
SC-70 (5)
VSSOP (8)
•
•
•
•
•
Active antenna system mMIMO (AAS)
Macro remote radio unit (RRU)
48-V rack server
48-V merchant network & server power supply
Test and measurement
VS
(1) For all available packages, see the package option
addendum at the end of the data sheet.
(2) Advanced information
VCM
INA2290 (dual channel)
INA290 (single channel)
ISENSE
R1
IN+
œ
Current
Feedback
RSENSE
Bias
R1
+
OUT
INœ
Buffer
SAR
ADC
Load
RL
GND
Typical Application
An IMPORTANT NOTICE at the end of this data sheet addresses availability, warranty, changes, use in safety-critical applications,
intellectual property matters and other important disclaimers. UNLESS OTHERWISE NOTED, this document contains PRODUCTION
DATA.
INA290, INA2290
SBOS961A – JUNE 2020 – REVISED SEPTEMBER 2020
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Table of Contents
1 Features............................................................................1
2 Applications.....................................................................1
3 Description.......................................................................1
4 Revision History.............................................................. 2
5 Description (cont.)...........................................................3
6 Pin Configuration and Functions ..................................3
7 Specifications.................................................................. 4
7.1 Absolute Maximum Ratings ....................................... 4
7.2 ESD Ratings .............................................................. 4
7.3 Recommended Operating Conditions ........................4
7.4 Thermal Information ...................................................4
7.5 Electrical Characteristics ............................................5
7.6 Typical Characteristics................................................6
8 Detailed Description......................................................12
8.1 Overview...................................................................12
8.2 Functional Block Diagram.........................................12
8.3 Feature Description...................................................13
8.4 Device Functional Modes..........................................15
9 Application and Implementation..................................16
9.1 Application Information............................................. 16
9.2 Typical Application.................................................... 18
10 Power Supply Recommendations..............................20
11 Layout...........................................................................20
11.1 Layout Guidelines................................................... 20
11.2 Layout Example...................................................... 20
12 Device and Documentation Support..........................22
12.1 Documentation Support.......................................... 22
12.2 Receiving Notification of Documentation Updates..22
12.3 Support Resources................................................. 22
12.4 Trademarks.............................................................22
12.5 Electrostatic Discharge Caution..............................22
12.6 Glossary..................................................................22
13 Mechanical, Packaging, and Orderable
Information.................................................................... 22
4 Revision History
Changes from Revision * (June 2020) to Revision A (August 2020)
Page
Changed the data sheet status from Production Data to Production Mixed.......................................................1
Added INA2290 advanced information to the document.................................................................................... 1
•
•
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5 Description (cont.)
Ultra-precise current measurements are achieved thanks to the combination of ultra-low offset voltage of ±12 µV
(maximum), small gain error of ±0.15% (maximum), and high DC CMRR of 160 dB (typical). The INAx290 is not
only designed for DC current measurement, but also for high-speed applications (like fast overcurrent protection,
for example) with a high bandwidth of 1.1 MHz (at gain of 20 V/V) and a 85-dB AC CMRR (at 50 kHz).
The INAx290 operates from a single 2.7-V to 20-V supply with the single channel device only drawing 370-µA
supply current (typical). The devices are available with five gain options: 20 V/V, 50 V/V, 100 V/V, 200 V/V, and
500 V/V. The low offset of the zero-drift architecture enables current sensing with low ohmic shunts as specified
over the extended operating temperature range (−40 °C to +125 °C).
6 Pin Configuration and Functions
IN+1
IN-1
VS
OUT
GND
VS
1
2
3
5
INœ
OUT1
IN+2
IN-2
OUT2
GND
4
IN+
Not to scale
Figure 6-1. DCK Package 5-Pin SC-70 Top View
A. Advanced information only
Figure 6-2. INA2290: DGK Package 8-Pin VSSOP
Top View
Pin Functions (Single channel device)
PIN
TYPE
DESCRIPTION
NAME
GND
IN–
NO.
2
Ground
Input
Ground
5
Connect to load side of shunt resistor
Connect to supply side of shunt resistor
Output voltage
IN+
4
Input
OUT
VS
1
Output
Power
3
Power supply
Pin Functions: INA2290 (Dual Channel)
PIN
TYPE
DESCRIPTION
NAME
NO.
GND
5
Ground
Ground
Current-sense amplifier negative input for channel 1. Connect to load side of
channel-1 sense resistor.
IN–1
IN+1
IN–2
IN+2
2
1
4
3
Analog input
Current-sense amplifier positive input for channel 1. Connect to bus-voltage side
of channel-1 sense resistor.
Analog input
Analog input
Analog input
Current-sense amplifier negative input for channel 2. Connect to load side of
channel-2 sense resistor.
Current-sense amplifier positive input for channel 2. Connect to bus-voltage side
of channel-2 sense resistor.
OUT1
OUT2
7
6
Analog output
Analog output
Channel 1 output voltage
Channel 2 output voltage
VS
8
Power
Power supply
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7 Specifications
7.1 Absolute Maximum Ratings
over operating free-air temperature range (unless otherwise noted)(1)
MIN
MAX
UNIT
Supply Voltage
(Vs)
–0.3
22
V
Differential (VIN+) – (VIN–
)
–30
–20
30
122
V
V
Analog Inputs,
VIN+, VIN–
(2)
Common - mode
Output
TA
GND – 0.3
–55
Vs + 0.3
150
V
Operating Temperature
Junction temperature
Storage temperature
°C
°C
°C
TJ
150
Tstg
–65
150
(1) Stresses beyond those listed under Absolute Maximum Rating may cause permanent damage to the device. These are stress ratings
only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under
Recommended Operating Condition. Exposure to absolute-maximum-rated conditions for extended periods may affect device
reliability.
(2) VIN+ and VIN– are the voltages at the VIN+ and VIN– pins, respectively.
7.2 ESD Ratings
VALUE
UNIT
Human body model (HBM), per ANSI/ESDA/JEDEC JS-001,
all pins(1)
±2000
V
V(ESD)
Electrostatic discharge
Charged device model (CDM), per JEDEC specification
JESD22-C101, all pins(2)
±1000
V
(1) JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.
(2) JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process.
7.3 Recommended Operating Conditions
over operating free-air temperature range (unless otherwise noted)
MIN
VS
NOM
48
MAX
120
20
UNIT
V
VCM
VS
Common-mode input range(1)
Operating supply range
Ambient temperature
2.7
–40
5
V
TA
125
°C
(1) Common-mode voltage can go below VS under certain conditions. See Figure 8-1 for additional infromation on operating range.
7.4 Thermal Information
INA2290
DGK (VSSOP)
8 PINS
169.3
INA290
DCK (SC-70)
5 PINS
191.6
THERMAL METRIC(1)
UNIT
RθJA
Junction-to-ambient thermal resistance
Junction-to-case (top) thermal resistance
Junction-to-board thermal resistance
°C/W
°C/W
°C/W
°C/W
°C/W
°C/W
RθJC(top)
RθJB
60.1
144.4
91.3
69.2
ΨJT
Junction-to-top characterization parameter
Junction-to-board characterization parameter
Junction-to-case (bottom) thermal resistance
8.3
46.2
ΨJB
89.7
69.0
RθJC(bot)
N/A
N/A
(1) For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application
report.
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7.5 Electrical Characteristics
at TA = 25 °C, VS = 5 V, VSENSE = VIN+ – VIN– = 0.5 V / Gain, VCM = VIN– = 48 V (unless otherwise noted)
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX UNIT
INPUT
VCM = 2.7 V to 120 V, TA = –40 °C to +125 °C
140
160
85
5
CMRR
Common-mode rejection ratio
dB
f = 50 kHz
A1 devices
±25
A2 devices
3
±20
µV
±15
Vos
Offset voltage, input referred
A3 devices
3
A4, A5 devices
TA = –40 °C to +125 °C
2
±12
dVos/dT Offset voltage drift
0.2 µV/℃
Power supply rejection ratio,
input refered
PSRR
VS = 2.7 V to 20 V, TA = –40 °C to +125 °C
0.05
±0.5
µV/V
IB+, VSENSE = 0 mV
IB–, VSENSE = 0 mV
10
10
20
20
30
30
IB
Input bias current
µA
OUTPUT
A1 devices
A2 devices
A3 devices
A4 devices
A5 devices
20
50
G
Gain
100
200
500
V/V
%
A1, A2, A3 devices,
GND + 50 mV ≤ VOUT ≤ VS – 200 mV
0.02
0.02
±0.1
Gain error
A4, A5 devices,
GND + 50 mV ≤ VOUT ≤ VS – 200 mV
±0.15
5
Gain error drift
TA = –40 °C to +125 °C
1.5
0.01
500
ppm/°C
%
Nonlinearity error
Maximum capacitive load
No sustained oscillations, no isolation resistor
pF
VOLTAGE OUTPUT
Swing to VS power supply rail RLOAD = 10 kΩ, TA = –40 °C to +125 °C
VS – 0.07
0.005
VS – 0.2
0.025
V
V
RLOAD = 10 kΩ, VSENSE = 0 V, TA = –40 °C to
Swing to ground
+125 °C
FREQUENCY RESPONSE
A1 devices, CLOAD = 5 pF, VSENSE = 200 mV
A2 devices, CLOAD = 5 pF, VSENSE = 80 mV
A3 devices, CLOAD = 5 pF, VSENSE = 40 mV
A4 devices, CLOAD = 5 pF, VSENSE = 20 mV
A5 devices, CLOAD = 5 pF, VSENSE = 8 mV
1100
1100
900
850
800
2
BW
SR
Bandwidth
kHz
Slew rate
V/µs
µs
VOUT =4 V ± 0.1 V step, output settles to 0.5%
VOUT =4 V ± 0.1 V step, output settles to 1%
9
Settling time
5
NOISE
Ven
Voltage noise density
50
nV/√Hz
POWER SUPPLY
VS
Supply voltage
TA = –40 °C to +125 °C
TA = –40 °C to +125 °C
2.7
20
500
600
V
370
IQ
Quiescent current, INA290
µA
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at TA = 25 °C, VS = 5 V, VSENSE = VIN+ – VIN– = 0.5 V / Gain, VCM = VIN– = 48 V (unless otherwise noted)
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX UNIT
700
1000
µA
1200
IQ
Quiescent current, INA2290
TA = –40 °C to +125 °C
7.6 Typical Characteristics
All specifications at TA = 25 °C, VS = 5 V, VSENSE = VIN+ – VIN– = 0.5 V / Gain, and VCM = VIN– = 48 V, unless
otherwise noted.
Input Offset Voltage (mV)
Input Offset Voltage (mV)
Figure 7-1. Input Offset Production Distribution, A1
Devices
Figure 7-2. Input Offset Production Distribution, A2
Devices
Input Offset Voltage (mV)
Input Offset Voltage (mV)
Figure 7-3. Input Offset Production Distribution, A3 Figure 7-4. Input Offset Production Distribution, A4
Devices
Devices
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8
4
0
G = 20
G = 50
-4
G = 100
G = 200
G = 500
-8
-75 -50 -25
0
25
50
75 100 125 150 175
Temperature (èC)
Input Offset Voltage (mV)
Figure 7-6. Input Offset Voltage vs Temperature
Figure 7-5. Input Offset Production Distribution, A5
Devices
20
180
160
140
120
100
80
10
0
G = 20
G = 50
60
-10
G = 100
G = 200
G = 500
40
20
10
-20
-75 -50 -25
100
1k 10k
Frequency (Hz)
100k
1M
0
25
50
75 100 125 150 175
Temperature (èC)
Figure 7-8. Common-Mode Rejection Ratio vs
Frequency
Figure 7-7. Common-Mode Rejection Ratio vs
Temperature
60
50
40
30
20
0.10
G = 20
G = 50
G = 100
G = 200
G = 500
0.05
0.00
G = 20
G = 50
G = 100
G = 200
G = 500
10
0
-0.05
-10
10
-0.10
100
1k
10k
Frequency (Hz)
100k
1M
10M
-75 -50 -25
0
25
50
75 100 125 150 175
Temperature (èC)
VSENSE = 4 V / Gain
Figure 7-9. Gain vs Frequency
Figure 7-10. Gain Error vs Temperature
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75
60
45
30
15
0
160
140
120
100
80
G = 20
G = 50
G = 100
G = 200
G = 500
60
-15
-30
-45
40
20
-75 -50 -25
0
25
50
75 100 125 150 175
10
100
1k 10k
Frequency (Hz)
100k
1M
Temperature (èC)
Figure 7-11. Power-Supply Rejection Ratio vs
Temperature
Figure 7-12. Power-Supply Rejection Ratio vs
Frequency
25
25
20
20
VS = 2.7 to 20V, VCM = 48V
VS = 2.7 to 20V, VCM = 120V
15
15
VS = 2.7 to 5V, VCM = 2.7V
VS = 20V, VCM = 7V
VS = 2.7 to 20V, VCM = 0V
VS = 0V, VCM = 48V
VS = 0V, VCM = 120V
VS = 0 to 20V, VCM = -20V
VS = 5V
VS = 20V
VS = 2.7V
VS = 0V
10
10
5
5
0
0
-5
-5
-20
0
20
40
60
Common-Mode Voltage (V)
80
100
120
-75 -50 -25
0
25
50
75 100 125 150 175
Temperature (èC)
VSENSE = 0 V
Figure 7-14. Input Bias Current vs Temperature
Figure 7-13. Input Bias Current vs Common-Mode
Voltage
240
140
IB+
IB-
IB+
120
IB-
200
IB+, VS = 0V
160
IB-, VS = 0V
120
IB+, VS = 0V
IB-, VS = 0V
100
80
60
80
40
40
20
0
0
-40
-80
-120
-160
-20
-40
-60
-80
0
200
400
600
800
1000
0
100
200
VSENSE (mV)
300
400
VSENSE (mV)
Figure 7-15. Input Bias Current vs VSENSE, A1
Devices
Figure 7-16. Input Bias Current vs VSENSE, A2 and
A3 Devices
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100
VS
VS - 1
VS - 2
25èC
125èC
-40èC
IB+, G=200
IB+, G=500
IB-
IB+, VS = 0V
IB-, VS = 0V
80
60
40
20
0
GND + 2
GND + 1
GND
-20
0
5
10
15
20
25
Output Current (mA)
30
35
40
0
20
40
60
80
100
VSENSE (mV)
VS = 2.7 V
Figure 7-18. Output Voltage vs Output Current
Figure 7-17. Input Bias Current vs VSENSE, A4 and
A5 Devices
VS
VS
25èC
125èC
-40èC
25èC
125èC
-40èC
VS - 1
VS - 2
VS - 3
VS - 1
VS - 2
VS - 3
GND + 3
GND + 2
GND + 1
GND
GND + 3
GND + 2
GND + 1
GND
0
5
10
15
Output Current (mA)
20
25
30
35
40
0
5
10
15
Output Current (mA)
20
25
30
35
40
VS = 5 V
VS = 20 V
Figure 7-19. Output Voltage vs Output Current
Figure 7-20. Output Voltage vs Output Current
1000
500
0.00
200
100
50
-0.10
-0.20
-0.30
20
10
5
2
1
0.5
0.2
0.1
0.05
-0.40
VS = 5V
VS = 20V
VS = 2.7V
0.02
0.01
-0.50
10
100
1k
10k
Frequency (Hz)
100k
1M
10M
-75 -50 -25
0
25
50
75 100 125 150 175
Temperature (èC)
RL = 10 kΩ
Figure 7-21. Output Impedance vs Frequency
Figure 7-22. Swing to Supply vs Temperature
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0.020
0.015
0.010
0.005
0.000
100
VS = 5V
VS = 20V
VS = 2.7V
G = 20
G = 500
80
70
60
50
40
30
20
10
10
-75 -50 -25
0
25
50
75 100 125 150 175
100
1k 10k
Frequency (Hz)
100k
1M
Temperature (èC)
RL = 10 kΩ
Figure 7-23. Swing to GND vs Temperature
Figure 7-24. Input Referred Noise vs Frequency
400
375
350
325
300
275
250
225
VS = 5V
VS = 20V
VS = 2.7V
200
175
0
2.5
5
7.5
10
12.5
Output Voltage (V)
15
17.5
20
Time (1 s/div)
Figure 7-25. Input Referred Noise
Figure 7-26. Quiescent Current vs Output Voltage,
INA290
425
400
375
350
50
VS = 5V, Sourcing
VS = 5V, Sinking
VS = 20V, Sourcing
VS = 20V, Sinking
VS = 2.7V, Sourcing
VS = 2.7V, Sinking
40
30
20
10
0
325
VS = 5V
VS = 20V
VS = 2.7V
300
-75 -50 -25
0
25
50
75 100 125 150 175
-75 -50 -25
0
25
50
75 100 125 150 175
Temperature (èC)
Temperature (èC)
Figure 7-27. Quiescent Current vs Temperature,
INA290
Figure 7-28. Short-Circuit Current vs Temperature
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425
425
400
375
350
325
300
VS = 5V
VS = 20V
VS = 2.7V
400
375
350
325
25èC
125èC
-40èC
300
0
-20
0
20
40
60
Common-Mode Voltage (V)
80
100
120
2
4
6
8
10
12
Supply Voltage (V)
14
16
18
20
Figure 7-30. Quiescent Current vs Common-Mode
Voltage, INA290
Figure 7-29. Quiescent Current vs Supply Voltage,
INA290
VCM
VOUT
2.7V
0V
0V
2.5V
Time (12.5ms/div)
RL = 10 kΩ
VSENSE = 5 mV
Time (10 ms/div)
Figure 7-32. Step Response, A3 Devices
Figure 7-31. Common-Mode Voltage Fast Transient
Pulse, A5 DeviceAs
Supply Voltage
Output Voltage
0V
0V
Supply Voltage
Output Voltage
Time (5 ms/div)
Time (25 ms/div)
VSENSE = 0 mV
VSENSE = 5 mV
Figure 7-33. Start-Up Response
Figure 7-34. Supply Transient Response, A5
Devices
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8 Detailed Description
8.1 Overview
The INAx290 is a high-side only current-sense amplifier that offers a wide common-mode range, precision zero-
drift topology, excellent common-mode rejection ratio (CMRR), high bandwidth, and fast slew rate. Different gain
versions are available to optimize the output dynamic range based on the application. The INAx290 is designed
using a transconductance architecture with a current-feedback amplifier that enables low bias currents of 20 µA
and a common-mode voltage of 120 V.
8.2 Functional Block Diagram
VS
VCM
INA2290 (dual channel)
INA290 (single channel)
ISENSE
R1
IN+
œ
Current
Feedback
RSENSE
Bias
R1
+
OUT
INœ
Buffer
SAR
ADC
Load
RL
GND
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8.3 Feature Description
8.3.1 Amplifier Input Common-Mode Range
The INAx290 supports large input common-mode voltages from 2.7 V to 120 V and features a high DC CMRR of
160 dB (typical) and a 85-dB AC CMRR at 50 kHz. The minimum common-mode voltage is restricted by the
supply voltage as shown in Figure 8-1. The topology of the internal amplifiers INAx290 restricts operation to
high-side, current-sensing applications.
8
7
6
5
4
3
2
VCM = 2.7V
1
0
0
2.5
5
7.5
10
12.5
Supply Voltage (V)
15
17.5
20
Figure 8-1. Minimum Common-Mode Voltage vs Supply
8.3.1.1 Input-Signal Bandwidth
The INAx290 –3-dB bandwidth is gain dependent with several gain options of 20 V/V, 50 V/V, 100 V/V, 200 V/V,
and 500 V/V as shown in Figure 7-8. The unique multistage design enables the amplifier to achieve high
bandwidth at all gains. This high bandwidth provides the throughput and fast response that is required for the
rapid detection and processing of overcurrent events.
The bandwidth of the device also depends on the applied VSENSE voltage. Figure 8-2 shows the bandwidth
performance profile of the device over frequency as output voltage increases for each gain variation. As shown
in Figure 8-2, the device exhibits the highest bandwidth with higher VSENSE voltages, and the bandwidth is higher
with lower device gain options. Individual requirements determine the acceptable limits of error for high-
frequency, current-sensing applications. Testing and evaluation in the end application or circuit is required to
determine the acceptance criteria and validate whether or not the performance levels meet the system
specifications.
1200
1100
1000
900
800
700
600
500
400
300
200
G = 20
G = 50
G = 100
G = 200
G = 500
0
0.5
1
1.5
2
2.5
Output Voltage (V)
3
3.5
4
Figure 8-2. Bandwidth vs Output Voltage
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8.3.1.2 Low Input Bias Current
The INAx290 input bias current draws 20 μA (typical) even with common-mode voltages as high as 120 V. This
enables precision current sensing in applications where the sensed current is small or applications that require
lower input leakage current.
8.3.1.3 Low VSENSE Operation
The INAx290 enables accurate current measurement across the entire valid VSENSE range. The zero-drift input
architecture of the INAx290 provides the low offset voltage and low offset drift needed to measure low VSENSE
levels accurately across the wide operating temperature of –40 °C to +125 °C. The capability to measure low
sense voltages enables accurate measurements at lower load currents, and also allows reduction of the sense
resistor value for a given operating current, which minimizes the power loss in the current sensing element.
8.3.1.4 Wide Fixed Gain Output
The INAx290 gain error is < 0.1% at room temperature for most gain options, with a maximum drift of 5 ppm/°C
over the full temperature range of –40 °C to +125 °C. The INAx290 is available in multiple gain options of 20 V/V,
50 V/V, 100 V/V, 200 V/V, and 500 V/V, which the system designer should select based on their desired signal-
to-noise ratio and other system requirements.
The INAx290 closed-loop gain is set by a precision, low-drift internal resistor network. The ratio of these resistors
are excellently matched, while the absolute values may vary significantly. TI does not recommend adding
additional resistance around the INAx290 to change the effective gain because of this variation, however. The
typical values of the gain resistors are described in Table 8-1.
Table 8-1. Fixed Gain Resistor
GAIN
R1
RL
20 (V/V)
50 (V/V)
100 (V/V)
200 (V/V)
500 (V/V)
25 kΩ
10 kΩ
10 kΩ
5 kΩ
500 kΩ
500 kΩ
1000 kΩ
1000 kΩ
1000 kΩ
2 kΩ
8.3.1.5 Wide Supply Range
The INAx290 operates with a wide supply range from a 2.7 V to 20 V. The output stage supports a full-scale
output voltage range of up to VS. Wide output range can enable very-wide dynamic range current
measurements. For a gain of 20 V/V, the maximum differential input acceptable is 1 V.
The offset of the gain of INAx290A1 device is ±25 μV, and the INAx290A1 is capable of measuring a wide
dynamic range of current up to 92 dB.
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8.4 Device Functional Modes
8.4.1 Unidirectional Operation
The INAx290 measures the differential voltage developed by current flowing through a resistor that is commonly
referred to as a current-sensing resistor or a current-shunt resistor. The INAx290 operates in unidirectional mode
only, meaning it only senses current sourced from a power supply to a system load as shown in Figure 8-3.
5 V
48-V
Supply
ISENSE
R1
IN+
+
Current
Feedback
RSENSE
Bias
R1
œ
OUT
INœ
Buffer
RL
Load
GND
Figure 8-3. Unidirectional Application (Single Channel Device)
The linear range of the output stage is limited to how close the output voltage can approach ground under zero-
input conditions. The zero current output voltage of the INAx290 is very small, with a maximum of GND + 25 mV.
Make sure to apply a sense voltage of (25 mV / Gain) or greater to keep the INAx290 output in the linear region
of operation.
8.4.2 High Signal Throughput
With a bandwidth of 1.1 MHz at a gain of 20 V/V and a slew rate of 2 V/µs, the INAx290 is specifically designed
for detecting and protecting applications from fast inrush currents. As shown in Table 8-2, the INAx290 responds
in less than 2 µs for a system measuring a 75-A threshold on a 2-mΩ shunt.
Table 8-2. Response Time
INAx290
PARAMETER
Gain
EQUATION
AT VS = 5 V
20 V/V
100 A
75 A
G
IMAX
Maximum current
IThreshold
RSENSE
VOUT_MAX
VOUT_THR
SR
Threshold current
Current sense resistor value
Output voltage at maximum current
Output voltage at threshold current
Slew rate
2 mΩ
VOUT = IMAX × RSENSE × G
4 V
VOUT_THR = ITHR × RSENSE × G
3 V
2 V/µs
< 2 µs
Output response time
Tresponse = VOUT_THR / SR
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9 Application and Implementation
Note
Information in the following applications sections is not part of the TI component specification, and TI
does not warrant its accuracy or completeness. TI’s customers are responsible for determining
suitability of components for their purposes. Customers should validate and test their design
implementation to confirm system functionality.
9.1 Application Information
The INAx290 amplifies the voltage developed across a current-sensing resistor as current flows through the
resistor to the load. The wide input common-mode voltage range and high common-mode rejection of the
INAx290 allows use over a wide range of voltage rails while still maintaining an accurate current measurement.
9.1.1 RSENSE and Device Gain Selection
The accuracy of any current-sense amplifier is maximized by choosing the current-sense resistor to be as large
as possible. A large sense resistor maximizes the differential input signal for a given amount of current flow and
reduces the error contribution of the offset voltage. However, there are practical limits as to how large the
current-sense resistor can be in a given application because of the resistor size and maximum allowable power
dissipation. Equation 1 gives the maximum value for the current-sense resistor for a given power dissipation
budget:
PDMAX
RSENSE
<
2
IMAX
(1)
where:
•
•
PDMAX is the maximum allowable power dissipation in RSENSE
IMAX is the maximum current that will flow through RSENSE
.
.
An additional limitation on the size of the current-sense resistor and device gain is due to the power-supply
voltage, VS, and device swing-to-rail limitations. To make sure that the current-sense signal is properly passed to
the output, both positive and negative output swing limitations must be examined. Equation 2 provides the
maximum values of RSENSE and GAIN to keep the device from exceeding the positive swing limitation.
IMAX ª RSENSE ª GAIN < VSP
(2)
where:
•
•
•
IMAX is the maximum current that will flow through RSENSE
GAIN is the gain of the current-sense amplifier.
VSP is the positive output swing as specified in the data sheet.
.
To avoid positive output swing limitations when selecting the value of RSENSE, there is always a trade-off
between the value of the sense resistor and the gain of the device under consideration. If the sense resistor
selected for the maximum power dissipation is too large, then it is possible to select a lower-gain device in order
to avoid positive swing limitations.
The negative swing limitation places a limit on how small the sense resistor value can be for a given application.
Equation 3 provides the limit on the minimum value of the sense resistor.
IMIN ª RSENSE ª GAIN > VSN
(3)
where:
•
•
IMIN is the minimum current that will flow through RSENSE
GAIN is the gain of the current-sense amplifier.
.
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•
VSN is the negative output swing of the device.
Table 9-1 shows an example of the different results obtained from using five different gain versions of the
INAx290. From the table data, the highest gain device allows a smaller current-shunt resistor and decreased
power dissipation in the element.
Table 9-1. RSENSE Selection and Power Dissipation
RESULTS AT VS = 5 V
PARAMETER(1)
Gain
EQUATION
INAx290A1 INAx290A2 INAx290A3 INAx290A4 INAx290A5
G
20 V/V
50 V/V
100 V/V
200 V/V
500 V/V
Ideal differential input voltage (Ignores
swing limitation and power supply
variation.)
VSENSE
VSENSE = VOUT / G
250 mV
100 mV
50 mV
25 mV
10 mV
RSENSE
PSENSE
Current sense resistor value
RSENSE = VSENSE / IMAX
25 mΩ
2.5 W
10 mΩ
1 W
5 mΩ
0.5W
2.5 mΩ
0.25 W
1 mΩ
0.1 W
Current-sense resistor power dissipation
RSENSE x IMAX2
(1) Design example with 10-A full-scale current with maximum output voltage set to 5 V.
9.1.2 Input Filtering
Note
Input filters are not required for accurate measurements using the INAx290, and use of filters in this
location is not recommended. If filter components are used on the input of the amplifier, follow the
guidelines in this section to minimize the effects on performance.
Based strictly on user design requirements, external filtering of the current signal may be desired. The initial
location that can be considered for the filter is at the output of the current-sense amplifier. Although placing the
filter at the output satisfies the filtering requirements, this location changes the low output impedance measured
by any circuitry connected to the output voltage pin. The other location for filter placement is at the current-sense
amplifier input pins. This location also satisfies the filtering requirement, but the components must be carefully
selected to minimally impact device performance. Figure 9-1 shows a filter placed at the input pins.
VS
VCM
1
f3dB
=
4ŒRINCIN
ISENSE
RIN
R1
R1
IN+
+
CIN
Current
RSENSE
Bias
Feedback
RIN
OUT
-
INœ
Buffer
Load
RL
GND
Figure 9-1. Filter at Input Pins
External series resistance provides a source of additional measurement error, so keep the value of these series
resistors to 10 Ω or less to reduce loss of accuracy. The internal bias network shown in Figure 9-1 creates a
mismatch in input bias currents (see Figure 7-15, Figure 7-16, and Figure 7-17) when a differential voltage is
applied between the input pins. If additional external series filter resistors are added to the circuit, a mismatch is
created in the voltage drop across the filter resistors. This voltage is a differential error voltage in the shunt
resistor voltage. In addition to the absolute resistor value, mismatch resulting from resistor tolerance can
significantly impact the error because this value is calculated based on the actual measured resistance.
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The measurement error expected from the additional external filter resistors can be calculated using Equation 4,
where the gain error factor is calculated using Equation 5.
Gain Error (%) = 100 x (Gain Error Factor Þ 1)
(4)
The gain error factor, shown in Equation 4, can be calculated to determine the gain error introduced by the
additional external series resistance. Equation 4 calculates the deviation of the shunt voltage, resulting from the
attenuation and imbalance created by the added external filter resistance. Table 9-2 provides the gain error
factor and gain error for several resistor values.
RB × R1
Gain Error Factor =
(RB × R1) + (RB × RIN) + (2 × RIN × R1)
(5)
Where:
•
•
•
RIN is the external filter resistance value.
R1 is the INAx290 input resistance value specified in Table 8-1.
RB in the internal bias resistance, which is 6600 Ω ± 20%.
Table 9-2. Example Gain Error Factor and Gain Error for 10-Ω External Filter Input Resistors
DEVICE (GAIN)
A1 devices (20)
A2 devices (50)
A3 devices (100)
A4 devices (200)
A5 devices (500)
GAIN ERROR FACTOR
GAIN ERROR (%)
0.99658
–0.34185
0.99598
–0.40141
0.99598
–0.40141
0.99499
–0.50051
0.99203
–0.79663
9.2 Typical Application
The INAx290 is a unidirectional, current-sense amplifier capable of measuring currents through a resistive shunt
with shunt common-mode voltages from 2.7 V to 120 V. The circuit configuration for monitoring current in a high-
side radio frequency (RF) power amplifier (PA) application is shown in Figure 9-2.
54 V
+
INAx290
ADC
œ
RF
Out
GND
Microprocessor
RF
DAC
GND
Figure 9-2. Current Sensing in a PA Application
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9.2.1 Design Requirements
VSUPPLY is set to 5 V, and the common-mode voltage set to 54 V. Table 9-3 lists the design setup for this
application.
Table 9-3. Design Parameters
DESIGN PARAMETERS
INAx290 supply voltage
High-side supply voltage
Maximum sense current (IMAX
Gain option
EXAMPLE VALUE
5 V
5 V
)
5 A
50 V/V
9.2.2 Detailed Design Procedure
The maximum value of the current-sense resistor is calculated based choice of gain, value of the maximum
current the be sensed (IMAX), and the power-supply voltage (VS). When operating at the maximum current, the
output voltage must not exceed the positive output swing specification, VSP. Under the given design parameters,
Equation 6 calculates the maximum value for RSENSE as 19.2 mΩ.
VSP
RSENSE
<
IMAX ìGAIN
(6)
For this design example, a value of 15 mΩ is selected because, while the 15 mΩ is less than the maximum value
calculated, 15 mΩ is still large enough to give adequate signal at the current-sense amplifier output.
9.2.2.1 Overload Recovery With Negative VSENSE
The INAx290 is a unidirectional current-sense amplifier that is meant to operate with a positive differential input
voltage (VSENSE). If negative VSENSE is applied, the device is placed in an overload condition and requires time to
recover once VSENSE returns positive. The required overload recovery time increases with more negative
VSENSE
.
9.2.3 Application Curve
Figure 9-3 shows the output response of the device to a high frequency sinusoidal current.
VSENSE (20 mV/div)
INA290A2 VOUT (1 V/div)
Time (10ms/div)
Figure 9-3. INAx290 Output Response
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10 Power Supply Recommendations
The input circuitry of the INAx290 device can accurately measure beyond the power-supply voltage. The power
supply can be 20 V, whereas the load power-supply voltage at IN+ and IN– can go up to 120 V. The output
voltage range of the OUT pin is limited by the voltage on the VS pin and the device swing to supply specification.
11 Layout
11.1 Layout Guidelines
TI always recommends to follow good layout practices:
•
Connect the input pins to the sensing resistor using a Kelvin or 4-wire connection. This connection technique
makes sure that only the current-sensing resistor impedance is detected between the input pins. Poor routing
of the current-sensing resistor commonly results in additional resistance present between the input pins.
Given the very low ohmic value of the current resistor, any additional high-current carrying impedance can
cause significant measurement errors.
•
•
Place the power-supply bypass capacitor as close to the device power supply and ground pins as possible.
The recommended value of this bypass capacitor is 0.1 µF. Additional decoupling capacitance can be added
to compensate for noisy or high-impedance power supplies.
When routing the connections from the current-sense resistor to the device, keep the trace lengths as short
as possible.
11.2 Layout Example
Load
RSENSE
TI Device
Current Sense
Output
1
2
3
5
INœ
OUT
GND
VS
Direction of
Current Flow
Power Supply, VS
(2.7 V to 20 V)
4 IN+
CBYPASS
VIA to Ground
Plane
Bus Voltage
Figure 11-1. Recommended Layout for INA290
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Direction of
Current Flow
RSHUNT1
Load 1
Bus Voltage1
CBYPASS
Power Supply, VS:
2.7 V to 20 V
5
4
3
2
1
IN+1
VS
INœ1 6
Current Sense Output 1
Current Sense Output 2
OUT1
OUT2
GND
7
8
IN+2
IN-2
VIA to Ground
Plane
Load 2
Bus Voltage2
RSHUNT2
Direction of
Current Flow
Figure 11-2. Recommended Layout for INA2290
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12 Device and Documentation Support
12.1 Documentation Support
12.1.1 Related Documentation
For related documentation, see the following:
Texas Instruments, INA290EVM User's Guide
12.2 Receiving Notification of Documentation Updates
To receive notification of documentation updates, navigate to the device product folder on ti.com. Click on
Subscribe to updates to register and receive a weekly digest of any product information that has changed. For
change details, review the revision history included in any revised document.
12.3 Support Resources
TI E2E™ support forums are an engineer's go-to source for fast, verified answers and design help — straight
from the experts. Search existing answers or ask your own question to get the quick design help you need.
Linked content is provided "AS IS" by the respective contributors. They do not constitute TI specifications and do
not necessarily reflect TI's views; see TI's Terms of Use.
12.4 Trademarks
TI E2E™ is a trademark of Texas Instruments.
All other trademarks are the property of their respective owners.
12.5 Electrostatic Discharge Caution
This integrated circuit can be damaged by ESD. Texas Instruments recommends that all integrated circuits be handled
with appropriate precautions. Failure to observe proper handling and installation procedures can cause damage.
ESD damage can range from subtle performance degradation to complete device failure. Precision integrated circuits may
be more susceptible to damage because very small parametric changes could cause the device not to meet its published
specifications.
12.6 Glossary
TI Glossary
This glossary lists and explains terms, acronyms, and definitions.
13 Mechanical, Packaging, and Orderable Information
The following pages include mechanical, packaging, and orderable information. This information is the most
current data available for the designated devices. This data is subject to change without notice and revision of
this document. For browser-based versions of this data sheet, refer to the left-hand navigation.
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PACKAGE OPTION ADDENDUM
www.ti.com
12-Sep-2020
PACKAGING INFORMATION
Orderable Device
Status Package Type Package Pins Package
Eco Plan
Lead finish/
Ball material
MSL Peak Temp
Op Temp (°C)
Device Marking
Samples
Drawing
DCK
DCK
DCK
DCK
DCK
DCK
DCK
DCK
DCK
DCK
Qty
3000
250
(1)
(2)
(3)
(4/5)
(6)
INA290A1IDCKR
INA290A1IDCKT
INA290A2IDCKR
INA290A2IDCKT
INA290A3IDCKR
INA290A3IDCKT
INA290A4IDCKR
INA290A4IDCKT
INA290A5IDCKR
INA290A5IDCKT
ACTIVE
SC70
SC70
SC70
SC70
SC70
SC70
SC70
SC70
SC70
SC70
5
5
5
5
5
5
5
5
5
5
Green (RoHS
& no Sb/Br)
NIPDAU
Level-1-260C-UNLIM
Level-1-260C-UNLIM
Level-1-260C-UNLIM
Level-1-260C-UNLIM
Level-1-260C-UNLIM
Level-1-260C-UNLIM
Level-1-260C-UNLIM
Level-1-260C-UNLIM
Level-1-260C-UNLIM
Level-1-260C-UNLIM
-40 to 125
-40 to 125
-40 to 125
-40 to 125
-40 to 125
-40 to 125
-40 to 125
-40 to 125
-40 to 125
-40 to 125
1FQ
1FQ
1FR
1FR
1FS
1FS
1FT
1FT
1FU
1FU
ACTIVE
ACTIVE
ACTIVE
ACTIVE
ACTIVE
ACTIVE
ACTIVE
ACTIVE
ACTIVE
Green (RoHS
& no Sb/Br)
NIPDAU
NIPDAU
NIPDAU
NIPDAU
NIPDAU
NIPDAU
NIPDAU
NIPDAU
NIPDAU
3000
250
Green (RoHS
& no Sb/Br)
Green (RoHS
& no Sb/Br)
3000
250
Green (RoHS
& no Sb/Br)
Green (RoHS
& no Sb/Br)
3000
250
Green (RoHS
& no Sb/Br)
Green (RoHS
& no Sb/Br)
3000
250
Green (RoHS
& no Sb/Br)
Green (RoHS
& no Sb/Br)
PINA2290A1IDGKR
PINA2290A2IDGKR
PINA2290A3IDGKR
PINA2290A4IDGKR
PINA2290A5IDGKR
ACTIVE
ACTIVE
ACTIVE
ACTIVE
ACTIVE
VSSOP
VSSOP
VSSOP
VSSOP
VSSOP
DGK
DGK
DGK
DGK
DGK
8
8
8
8
8
2500
2500
2500
2500
2500
TBD
TBD
TBD
TBD
TBD
Call TI
Call TI
Call TI
Call TI
Call TI
Call TI
Call TI
Call TI
Call TI
Call TI
-40 to 125
-40 to 125
-40 to 125
-40 to 125
-40 to 125
(1) The marketing status values are defined as follows:
ACTIVE: Product device recommended for new designs.
LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect.
NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design.
PREVIEW: Device has been announced but is not in production. Samples may or may not be available.
Addendum-Page 1
PACKAGE OPTION ADDENDUM
www.ti.com
12-Sep-2020
OBSOLETE: TI has discontinued the production of the device.
(2) RoHS: TI defines "RoHS" to mean semiconductor products that are compliant with the current EU RoHS requirements for all 10 RoHS substances, including the requirement that RoHS substance
do not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, "RoHS" products are suitable for use in specified lead-free processes. TI may
reference these types of products as "Pb-Free".
RoHS Exempt: TI defines "RoHS Exempt" to mean products that contain lead but are compliant with EU RoHS pursuant to a specific EU RoHS exemption.
Green: TI defines "Green" to mean the content of Chlorine (Cl) and Bromine (Br) based flame retardants meet JS709B low halogen requirements of <=1000ppm threshold. Antimony trioxide based
flame retardants must also meet the <=1000ppm threshold requirement.
(3) MSL, Peak Temp. - The Moisture Sensitivity Level rating according to the JEDEC industry standard classifications, and peak solder temperature.
(4) There may be additional marking, which relates to the logo, the lot trace code information, or the environmental category on the device.
(5) Multiple Device Markings will be inside parentheses. Only one Device Marking contained in parentheses and separated by a "~" will appear on a device. If a line is indented then it is a continuation
of the previous line and the two combined represent the entire Device Marking for that device.
(6)
Lead finish/Ball material - Orderable Devices may have multiple material finish options. Finish options are separated by a vertical ruled line. Lead finish/Ball material values may wrap to two
lines if the finish value exceeds the maximum column width.
Important Information and Disclaimer:The information provided on this page represents TI's knowledge and belief as of the date that it is provided. TI bases its knowledge and belief on information
provided by third parties, and makes no representation or warranty as to the accuracy of such information. Efforts are underway to better integrate information from third parties. TI has taken and
continues to take reasonable steps to provide representative and accurate information but may not have conducted destructive testing or chemical analysis on incoming materials and chemicals.
TI and TI suppliers consider certain information to be proprietary, and thus CAS numbers and other limited information may not be available for release.
In no event shall TI's liability arising out of such information exceed the total purchase price of the TI part(s) at issue in this document sold by TI to Customer on an annual basis.
OTHER QUALIFIED VERSIONS OF INA290 :
Automotive: INA290-Q1
•
NOTE: Qualified Version Definitions:
Automotive - Q100 devices qualified for high-reliability automotive applications targeting zero defects
•
Addendum-Page 2
IMPORTANT NOTICE AND DISCLAIMER
TI PROVIDES TECHNICAL AND RELIABILITY DATA (INCLUDING DATASHEETS), DESIGN RESOURCES (INCLUDING REFERENCE
DESIGNS), APPLICATION OR OTHER DESIGN ADVICE, WEB TOOLS, SAFETY INFORMATION, AND OTHER RESOURCES “AS IS”
AND WITH ALL FAULTS, AND DISCLAIMS ALL WARRANTIES, EXPRESS AND IMPLIED, INCLUDING WITHOUT LIMITATION ANY
IMPLIED WARRANTIES OF MERCHANTABILITY, FITNESS FOR A PARTICULAR PURPOSE OR NON-INFRINGEMENT OF THIRD
PARTY INTELLECTUAL PROPERTY RIGHTS.
These resources are intended for skilled developers designing with TI products. You are solely responsible for (1) selecting the appropriate
TI products for your application, (2) designing, validating and testing your application, and (3) ensuring your application meets applicable
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