IRF7821 [TI]
Dual-Synchronous, Step-Down Controller with Out-of-Audio? Operation and 100-mA LDOs for Notebook System Power; 双路同步降压 - 控制器具有Out-of - Audio⑩操作和100mA LDO的用于笔记本系统电源
| 型号： | IRF7821 |
| 厂家： | 
TEXAS INSTRUMENTS |
| 描述： | Dual-Synchronous, Step-Down Controller with Out-of-Audio? Operation and 100-mA LDOs for Notebook System Power |
| 文件： | 总33页 (文件大小：910K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
TPS51123
www.ti.com ........................................................................................................................................................................................... SLUS890–DECEMBER 2008
Dual-Synchronous, Step-Down Controller with Out-of-Audio™ Operation and 100-mA
LDOs for Notebook System Power
1
FEATURES
APPLICATIONS
•
•
•
Notebook Computers
I/O Supplies
System Power Supplies
2
•
Wide-Input Voltage Range: 5.5 V to 28 V
Output Voltage Range: 2 V to 5.5 V
Built-in 100-mA 5-V/3.3-V LDO with Switches
Built-in 1% 2-V Reference Output
•
•
•
•
DESCRIPTION
With/Without Out-of-Audio™ Mode Selectable
Light-Load and PWM only Operation
The TPS51123 is a cost effective, dual-synchronous
buck controller targeted for notebook system power
supply solutions. It provides 5-V and 3.3-V LDOs and
requires few external components. The TPS51123
supports high efficiency, fast transient responses and
•
•
Internal 1.6-ms Voltage Servo Softstart
Adaptive On-Time Control Architecture with
Four Selectable Frequency Setting
provides
a
combined
power-good
signal.
•
•
•
•
•
•
4500 ppm/°C RDS(on) Current Sensing
Built-In Output Discharge
Power Good Output
Out-of-Audio™ mode light-load operation enables low
acoustic noise at much higher efficiency than
conventional forced PWM operation. Adaptive
on-time D-CAP™ control provides convenient and
efficient operation. The part operates with supply
input voltages ranging from 5.5 V to 28 V and
supports output voltages from 2 V to 5.5 V. The
TPS51123 is available in a 24-pin QFN package and
is specified from -40°C to 85°C ambient temperature
range.
Built-in OVP/UVP/OCP
Thermal Shutdown (Non-latch)
24-Pin QFN (RGE) Package
13 kW
20 kW
20 kW
220 nF
30 kW
VIN
VIN
130 kW
130 kW
VIN
10 mF x 2
5.5 V
to
28 V
10 mF x 2
6
5
4
3
2
1
7
8
9
VO2
VO1 24
100 kW
10 mF
VREG3
VBST2
PGOOD 23
VBST1 22
DRVH1 21
LL1 20
VREG5
0.1 mF
0.1 mF
TPS51123RGE
(QFN-24)
3.3 mF
3.3 mF
5.1 W
5.1 W
VO2
VO1
5 V
10 DRVH2
11 LL2
3.3 V
PowerPAD
330 mF
330 mF
12 DRVL2
DRVL1 19
13 14 15 16 17 18
EN0
ENC
VREG5
33 mF
VIN
UDG-08167
1
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of Texas
Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.
2
Out-of-Audio, D-CAP are trademarks of Texas Instruments.
PRODUCTION DATA information is current as of publication date.
Products conform to specifications per the terms of the Texas
Instruments standard warranty. Production processing does not
necessarily include testing of all parameters.
Copyright © 2008, Texas Instruments Incorporated
TPS51123
SLUS890–DECEMBER 2008 ........................................................................................................................................................................................... www.ti.com
ORDERING INFORMATION(1)
MINIMUM
QUANTITY
TA
PACKAGE
PART NUMBER
PINS
TRANSPORT MEDIA
ECO PLAN
TPS51123RGET
TPS51123RGER
250
Green
(RoHS and
no Sb/Br)
Plastic Quad Flat Pack
(QFN)
-40°C to 85°C
24
Tape/Reel
3000
(1) For the most current spcifications and package information, see the Package Option Addendum located at the end of this data sheet or
refer to our web site at http://www.ti.com.
ABSOLUTE MAXIMUM RATINGS(1)
over operating free-air temperature range (unless otherwise noted)
PARAMETER
VALUE
-0.3 to 36
-0.3 to 30
-2.0 to 30
-0.3 to 6
UNIT
VBST1, VBST2
VIN
Input voltage range
LL1, LL2
V
(1)
(2)
VBST1, VBST2
EN0, ENC, TRIP1, TRIP2, VFB1, VFB2, VO1, VO2, TONSEL, SKIPSEL
DRVH1, DRVH2
-0.3 to 6
-1.0 to 36
-0.3 to 6
Output voltage range
(2)
DRVH1, DRVH2
V
(1)
PGOOD, VREG3, VREG5, VREF, DRVL1, DRVL2
-0.3 to 6
TJ
Junction temperature range
-40 to 125
-55 to 150
°C
Tstg Storage temperature
(1) Stresses beyond those listed under "absolute maximum ratings" may cause permanent damage to the device. These are stress ratings
only and functional operation of the device at these or any other conditions beyond those indicated under "recommended operating
conditions" is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
(2) Voltage values are with respect to the corresponding LLx terminal.
DISSIPATION RATINGS
2-oz. trace and copper pad with solder.
DERATING FACTOR ABOVE TA
PACKAGE
TA < 25°C POWER RATING
TA = 85°C POWER RATING
= 25°C
24 pin RGE(1)
1.85 W
18.5 mW/°C
0.74 W
(1) Enhanced thermal conductance by 3 x 3 thermal vias beneath thermal pad.
RECOMMENDED OPERATING CONDITIONS
over operating free-air temperature range (unless otherwise noted)
PARAMETER
MIN
5.5
TYP
MAX
UNIT
Supply voltage
VIN
28
34
Input voltage range
VBST1, VBST2
VBST1, VBST2 (wrt LLx)
-0.1
-0.1
5.5
EN0, ENC, TRIP1, TRIP2, VFB1, VFB2, VO1, VO2,
TONSEL, SKIPSEL
-0.1
5.5
V
Output voltage range
DRVH1, DRVH2
-0.8
-0.1
-1.8
-0.1
-0.1
-40
34
5.5
28
DRVH1, DRVH2 (wrt LLx)
LL1, LL2
VREF, VREG3, VREG5
PGOOD, DRVL1, DRVL2
Operating free-air temperature
5.5
5.5
85
TA
°C
2
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www.ti.com ........................................................................................................................................................................................... SLUS890–DECEMBER 2008
ELECTRICAL CHARACTERISTICS
over operating free-air temperature range, VIN = 12 V (unless otherwise noted)
PARAMETER
SUPPLY CURRENT
CONDITIONS
MIN
TYP
MAX
UNIT
VIN current, TA = 25°C, no load, VO1 = 0 V,
VO2 = 0 V, EN0=open, ENC = 5 V,
TRIP1 = TRIP2 = 2 V, VFB1 = VFB2 = 2.05 V
IVIN1
IVIN2
IVO1
IVO2
VIN supply current1
VIN supply current2
VO1 current
0.55
1
mA
µA
VIN current, TA = 25°C, no load, VO1 = 5 V,
VO2 = 3.3 V, EN0=open, ENC = 5 V,
TRIP1 = TRIP2 = 2 V, VFB1 = VFB2 = 2.05 V
4
0.8
12
6.5
1.5
VO1 current, TA = 25°C, no load, VO1 = 5 V,
VO2 = 3.3 V, EN0=open, ENC = 5 V,
TRIP1 = TRIP2 = 2 V, VFB1 = VFB2 = 2.05 V
mA
VO2 current, TA = 25°C, no load, VO1 = 5 V,
VO2 = 3.3 V, EN0=open, ENC = 5 V,
VO2 current
100
TRIP1 = TRIP2 = 2 V, VFB1 = VFB2 = 2.05 V
VIN current, TA = 25°C, no load,
EN0 = 1.2 V, ENC = 0 V
µA
IVINSTBY
IVINSDN
VIN standby current
VIN shutdown current
95
10
250
25
VIN current, TA = 25°C, no load,
EN0 = ENC = 0 V
VREF OUTPUT
IVREF = 0 A
1.98
2.00
2.00
2.02
2.03
VVREF
VREF output voltage
V
V
–5 µA < IVREF < 100 µA
1.97
VREG5 OUTPUT
VO1 = 0 V, IVREG5 < 100 mA, TA = 25°C
4.8
5
5
5.2
VO1 = 0 V, IVREG5 < 100 mA,
6.5 V < VIN < 28 V
VVREG5
VREG5 output voltage
4.75
5.25
VO1 = 0 V, IVREG5 < 50 mA, 5.5 V < VIN < 28 V
VO1 = 0 V, VREG5 = 4.5 V
Turns on
4. 75
100
5
175
4.7
0.25
1
5.25
250
4.85
0.3
3
IVREG5
VREG5 output current
mA
V
4.55
0.15
VTH5VSW Switch over threshold
Hysteresis
R5VSW
5 V SW RON
VO1 = 5 V, IVREG5 = 100 mA
Ω
VREG3 OUTPUT
VO2 = 0 V, IVREG3 < 100 mA, TA= 25°C
VO2 = 0 V, IVREG3 < 100 mA, 6.5 V < VIN < 28 V
VO2 = 0 V, IVREG3 < 50 mA, 5.5 V < VIN < 28 V
VO2 = 0 V, VREG3 = 3 V
3.2
3.13
3.13
100
3.05
0.1
3.33
3.33
3.33
175
3.15
0.2
3.46
3.5
VVREG3
VREG3 output voltage
V
3.5
IVREG3
VREG3 output current
250
3.25
0.25
4
mA
V
Turns on
VTH3VSW Switch over threshold
Hysteresis
R3VSW
3 V SW RON
VO2 = 3.3 V, IVREG3 = 100 mA
1.5
Ω
INTERNAL REFERENCE VOLTAGE
VIREF
VVFB
IVFB
Internal reference voltage
VFB regulation voltage
VFB input current
IVREF = 0 A, beginning of ON state
FB voltage, IVREF = 0 A, skip mode
1.95
1.98
2.00
1.98
2.01
2.01
2.04
2.07
(1)
V
FB voltage, IVREF = 0 A, OOA mode
2.035
FB voltage, IVREF = 0 A, continuous conduction
mode(1)
2.00
VFBx = 2.0 V, TA= 25°C
-20
10
20
nA
OUTPUT VOLTAGE, VOUT DISCHARGE
IDischg VOUT discharge current
ENC = 0 V, VOx = 0.5 V
60
mA
(1) Ensured by design. Not production tested.
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ELECTRICAL CHARACTERISTICS (continued)
over operating free-air temperature range, VIN = 12 V (unless otherwise noted)
PARAMETER
OUTPUT DRIVERS
CONDITIONS
MIN
TYP
MAX
UNIT
Source, VBSTx - DRVHx = 100 mV
Sink, VDRVHx - LLx = 100 mV
Source, VVREG5 - DRVLx = 100 mV
Sink, VDRVLx = 100 mV
4
8
4
8
4
RDRVH
RDRVL
TD
DRVH resistance
DRVL resistance
Dead time
1.5
4
Ω
1.5
10
30
DRVHx-off to DRVLx-on
ns
DRVLx-off to DRVHx-on
INTERNAL BST DIODE
VFBST
Forward voltage
VVREG5-VBSTx, IF = 10 mA, TA = 25 °C
VBSTx = 34 V, LLx = 28 V, TA = 25 °C
0.7
0.8
0.1
0.9
1
V
IVBSTLK
VBST leakage current
µA
DUTY AND FREQUENCY CONTROL
TON11
TON12
TON13
TON14
TON21
TON22
TON23
TON24
TON(min)
CH1 on time 1
CH1 on time 2
CH1 on time 3
CH1 on time 4
CH2 on time 1
CH2 on time 2
CH2 on time 3
CH2 on time 4
Minimum on time
VIN = 12 V, VO1 = 5 V, 200 kHz setting
VIN = 12 V, VO1 = 5 V, 245 kHz setting
VIN = 12 V, VO1 = 5 V, 300 kHz setting
VIN = 12 V, VO1 = 5 V, 365 kHz setting
VIN = 12 V, VO2 = 3.3 V, 250 kHz setting
VIN = 12 V, VO2 = 3.3 V, 305 kHz setting
VIN = 12 V, VO2 = 3.3 V, 375 kHz setting
VIN = 12 V, VO2 = 3.3 V, 460 kHz setting
TA = 25 °C
2080
1700
1390
1140
1100
900
ns
730
600
80
TOFF(min) Minimum off time
TA = 25 °C
300
SOFTSTART
TSS
Internal SS time
Internal soft start
1.1
1.6
2.1
ms
POWERGOOD
PG in from lower
PG in from higher
PG hysteresis
92.50%
102.50%
2.50%
5
95%
97.50%
VTHPG
PG threshold
105% 107.50%
5%
12
7.50%
IPGMAX
TPGDEL
PG sink current
PG delay
PGOOD = 0.5 V
Delay for PG in
mA
350
510
670
µs
LOGIC THRESHOLD AND SETTING CONDITIONS
Shutdown
0.4
VEN0
IEN0
EN0 setting voltage
EN0 current
V
µA
V
Enable
2.4
2
VEN0 = 0.2 V
Shutdown
3.5
5
0.6
VENC
ENC threshold voltage
Enable
2
200 kHz/250 kHz
245 kHz/305 kHz
300 kHz/375 kHz
365 kHz/460 kHz
Auto skip
1.5
2.1
3.6
1.9
2.7
4.7
VTONSEL TONSEL setting voltage
VSKIPSEL SKIPSEL setting voltage
V
V
1.5
2.1
PWM only
1.9
2.7
OOA auto skip
4
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TPS51123
www.ti.com ........................................................................................................................................................................................... SLUS890–DECEMBER 2008
ELECTRICAL CHARACTERISTICS (continued)
over operating free-air temperature range, VIN = 12 V (unless otherwise noted)
PARAMETER
CONDITIONS
MIN
TYP
MAX
UNIT
PROTECTION: CURRENT SENSE
ITRIP
TRIPx source current
VTRIPx = 920 mV, TA= 25°C
9.4
10
10.6
µA
TRIPx current temperature
coefficient
TCITRIP
On the basis of 25°C
4500
ppm/°C
((VTRIPx-GND/9)-24 mV -VGND-LLx) voltage,
VTRIPx-GND = 920 mV
VOCLoff
OCP comparator offset
-8
185
0
205
0
8
225
5
VOCL(max) Maximum OCL setting
VTRIPx = 5 V
mV
V
Zero cross detection
VZC
VGND-LLx voltage
-5
comparator offset
(2)
VTRIP
Current limit threshold
VTRIPx-GND voltage
0.515
2
PROTECTION: UNDERVOLTAGE AND OVERVOLTAGE PROTECTION
VOVP
OVP trip threshold
OVP detect
110%
55%
115%
2
120%
65%
TOVPDEL OVP prop delay
µs
UVP detect
Hysteresis
60%
10%
32
VUVP
Output UVP trip threshold
TUVPDEL
TUVPEN
Output UVP prop delay
Output UVP enable delay
20
40
µs
1.4
2
2.6
ms
UNDERVOLTAGE LOCKOUT (UVLO)
Wake up
4.1
4.2
0.43
4.3
VUVVREG5 VREG5 UVLO threshold
Hysteresis
0.38
0.48
V
(2)
VUVVREG3 VREG3 UVLO threshold
Shutdown
VO2-1
THERMAL SHUTDOWN
(2)
Shutdown temperature
150
10
TSDN
Thermal shutdown threshold
°C
(2)
Hysteresis
(2) Ensured by design. Not production tested.
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DEVICE INFORMATION
Table 1. TERMINAL FUNCTIONS TABLE
TERMINAL
I/O
O
DESCRIPTION
NAME
DRVH1
DRVH2
DRVL1
DRVL2
NO.
21
High-side N-channel MOSFET driver outputs. LL referenced drivers.
Low-side N-channel MOSFET driver outputs. GND referenced drivers.
10
19
O
12
Master enable input.
EN0
13
I/O
Open : LDOs on, and ready to turn both switcher channels.
GND : disable all circuit
Channel 1 and Channel 2 enable input. Pull up to the voltage ranging 3.3-V to 5-V to turn on both
switcher channels. Short to ground to shutdown them.
ENC
18
I
GND
LL1
15
20
11
23
–
Ground.
I
Switch node connections for high-side drivers, current limit and control circuitry.
Powergood window comparator output for channel 1 and 2. (Logical AND)
LL2
PGOOD
O
Selection pin for operation mode:
OOA auto skip : Connect to VREG3 or VREG5
PWM only: Connect to VREF
SKIPSEL
14
I
Auto skip: Connect to GND
TRIP1
TRIP2
1
6
I/O
OCL trip setting pins. Connect resistor from this pin to GND to set threshold for synchronous RDS(on)
sense.
On-time adjustment pin.
365 kHz/460 kHz setting: connect to VREG5
300 kHz/375 kHz setting: connect to VREG3
245 kHz/305 kHz setting: connect to VREF
200 kHz/250 kHz setting: connect to GND
TONSEL
4
I
I
VBST1
VBST2
VFB1
VFB2
VIN
22
9
Supply input for high-side N-channel MOSFET driver (boost terminal).
2
I
I
SMPS feedback inputs. Connect with feedback resistor divider.
High voltage power supply input for 5-V/3.3-V LDO.
5
16
24
7
VO1
Output connection to SMPS. These terminals work as fixed voltage inputs and output discharge
inputs. VO1 and VO2 also work as 5-V and 3.3-V switch over return power input respectively.
I/O
VO2
2-V reference voltage output. Connect 220-nF to 1-µF ceramic capacitor to Signal GND near the
device.
VREF
3
O
3.3-V power supply output. Connect a 10-µF ceramic capacitor to Power GND near the device. A
1-µF ceramic capacitor is acceptable when not loaded.
VREG3
VREG5
8
O
O
17
5-V power supply output. Connect a 33-µF ceramic capacitor to Power GND near the device.
6
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QFN PACKAGE (TOP VIEW)
24
23
20
19
22
21
1
2
3
4
5
6
18 ENC
17 VREG5
16 VIN
TRIP1
VFB1
VREF
TONSEL
VFB2
TPS51123RGE
(QFN-24)
15 GND
14 SKIPSEL
13 EN0
TRIP2
9
10
7
8
11
12
Functional Block Diagram
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Switcher Controller Block
8
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TYPICAL CHARACTERISTICS
VIN SUPPLY CURRENT1
vs
VIN SUPPLY CURRENT1
vs
JUNCTION TEMPERATURE
INPUT VOLTAGE
800
700
600
500
400
300
200
100
0
800
700
600
500
400
300
200
100
0
-50
0
50
100
150
5
10
15
20
25
T
- Junction Temperature - °C
J
V
- Input Voltage - V
IN
Figure 1.
Figure 2.
VIN SUPPLY CURRENT2
vs
VIN SUPPLY CURRENT2
vs
JUNCTION TEMPERATURE
INPUT VOLTAGE
9
8
7
6
5
4
3
2
1
0
9
8
7
6
5
4
3
2
1
0
5
10
15
20
25
-50
0
50
100
150
V
- Input Voltage - V
IN
T
- Junction Temperature - °C
J
Figure 3.
Figure 4.
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TYPICAL CHARACTERISTICS (continued)
VIN STANDBY CURRENT
VIN STANDBY CURRENT
vs
vs
INPUT VOLTAGE
JUNCTION TEMPERATURE
250
250
200
200
150
150
100
100
50
50
0
0
5
10
15
20
25
-50
0
50
100
150
T
- Junction Temperature - °C
V
- Input Voltage - V
J
IN
Figure 5.
Figure 6.
VIN SHUTDOWN CURRENT
vs
VIN SHUTDOWN CURRENT
vs
JUNCTION TEMPERATURE
INPUT VOLTAGE
25
20
15
10
5
25
20
15
10
5
0
0
5
10
15
20
25
-50
0
50
100
150
V
- Input Voltage - V
T
- Junction Temperature - °C
IN
J
Figure 7.
Figure 8.
10
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TYPICAL CHARACTERISTICS (continued)
SWITCHING FREQUENCY
CURRENT SENSE CURRENT
vs
vs
INPUT VOLTAGE
JUNCTION TEMPERATURE
500
14
TONSEL = GND
13
400
12
11
10
9
300
200
100
0
CH2
CH1
8
7
6
-
50
6
8
10 12 14 16 18 20 22 24 26
0
50
100
150
V
IN - Input Voltage - V
T
- Junction Temperature - °C
J
Figure 9.
Figure 10.
SWITCHING FREQUENCY
vs
SWITCHING FREQUENCY
vs
INPUT VOLTAGE
INPUT VOLTAGE
500
400
300
200
100
0
500
TONSEL = 3.3V
TONSEL = 2V
CH2
CH1
400
300
200
100
0
CH2
CH1
6
8
10 12 14 16 18 20 22 24 26
VIN - Input Voltage - V
6
8
10 12 14 16 18 20 22 24 26
IN - Input Voltage - V
V
Figure 11.
Figure 12.
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TYPICAL CHARACTERISTICS (continued)
SWITCHING FREQUENCY
vs
SWITCHING FREQUENCY
vs
OUTPUT CURRENT
INPUT VOLTAGE
500
400
300
200
100
0
500
400
300
200
100
0
TONSEL = GND
CH2
CH1
TONSEL = 5V
CH2 PWM Only
CH1 PWM Only
CH1 OOA
CH2 Auto-skip
CH2 OOA
CH1 Auto-skip
1
0.001
0.01
0.1
10
6
8
10 12 14 16 18 20 22 24 26
VIN - Input Voltage - V
IOUT - Output Current - A
Figure 13.
Figure 14.
SWITCHING FREQUENCY
vs
SWITCHING FREQUENCY
vs
OUTPUT CURRENT
OUTPUT CURRENT
500
400
300
200
100
0
500
400
300
200
100
0
TONSEL = 3.3V
TONSEL = 2V
CH2 PWM Only
CH1 PWM Only
CH2 PWM Only
CH1 PWM Only
CH2 Auto-skip
CH2 Auto-skip
CH2 OOA
CH2 OOA
CH1 OOA
CH1 OOA
CH1 Auto-skip
1
CH1 Auto-skip
1 10
0.001
0.01
0.1
10
0.001
0.01
0.1
IOUT - Output Current - A
IOUT - Output Current - A
Figure 15.
Figure 16.
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TYPICAL CHARACTERISTICS (continued)
SWITCHING FREQUENCY
OVP/UVP THRESHOLD VOLTAGE
vs
vs
OUTPUT CURRENT
JUNCTION TEMPERATURE
500
150
TONSEL = 5V
140
CH2 PWM Only
400
300
200
100
0
130
120
110
100
90
CH1 PWM Only
CH2 Auto-skip
80
70
CH2 OOA
CH1 OOA
60
CH1 Auto-skip
1
50
40
0.001
0.01
0.1
10
-50
0
50
100
150
IOUT - Output Current - A
T
- Junction Temperature - °C
J
Figure 17.
Figure 18.
VREG3 OUTPUT VOLTAGE
vs
VREG5 OUTPUT VOLTAGE
vs
OUTPUT CURRENT
OUTPUT CURRENT
3.35
5.05
5.00
4.95
4.90
3.3
3.25
3.2
0
20
40
60
80
100
0
20
40
60
80
100
I
- VREG3 Output Current - mA
VREG3
I
- VREG5 Output Current - mA
VREG5
Figure 19.
Figure 20.
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TYPICAL CHARACTERISTICS (continued)
VREF OUTPUT VOLTAGE
5-V OUTPUT VOLTAGE
vs
vs
OUTPUT CURRENT
OUTPUT CURRENT
5.075
2.020
OOA
2.015
5.050
2.010
5.025
5.000
4.975
4.950
Auto-skip
PWM Only
2.005
2.000
1.995
1.990
1.985
1.980
0.001
0.01
0.1
1
10
0
20
40
60
80
100
IOUT1 - 5-V Output Current - A
I
- VREF Output Current - mA
VREF
Figure 21.
Figure 22.
5-V OUTPUT VOLTAGE
vs
3.3-V OUTPUT VOLTAGE
vs
INPUT VOLTAGE
OUTPUT CURRENT
5.075
5.050
5.025
5.000
4.975
4.950
3.360
OOA
3.330
3.300
3.270
3.240
Auto-skip
PWM Only
IO = 0A
IO = 6A
6
8
10 12 14 16 18 20 22 24 26
0.001
0.01
0.1
1
10
V
IN - Input Voltage - V
IOUT2 - 3.3-V Output Current - A
Figure 23.
Figure 24.
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TYPICAL CHARACTERISTICS (continued)
5-V EFFICIENCY
vs
OUTPUT CURRENT
3.3-V OUTPUT VOLTAGE
vs
INPUT VOLTAGE
100
3.360
Auto-Skip
80
3.330
V
= 20 V
IN
IO = 0A
IO = 6A
60
3.300
3.270
3.240
V
= 12 V
IN
40
20
V
= 8 V
IN
OOA
PWM Only
0.1
0
0.001
6
8
10 12 14 16 18 20 22 24 26
0.01
1
10
V
IN - Input Voltage - V
I
– 5-V Output Current – A
OUT1
Figure 25.
Figure 26.
3.3-V EFFICIENCY
vs
OUTPUT CURRENT
100
Auto-skip
80
60
40
20
0
VIN=8V
VIN=12V
VIN=20V
OOA
PWM Only 5-V Switcher ON
0.1 10
0.001
0.01
1
IOUT2 - 3.3-V Output Current - A
Figure 27.
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TYPICAL CHARACTERISTICS (continued)
5-V Load Transient Response
3.3-V Load Transient Response
V
OUT2
(100mV/div)
V
OUT1
(100mV/div)
I
(5A/div)
I
(5A/div)
IND
IND
I
(5A/div)
I
(5A/div)
OUT2
OUT1
Figure 28.
5-V Startup Waveforms
Figure 29.
3.3-V Startup Waveforms
ENC (5 V/div)
ENC (5 V/div)
V
(2 V/div)
OUT1
V
(2 V/div)
OUT2
PGOOD (5 V/div)
PGOOD (5 V/div)
Figure 30.
Figure 31.
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TYPICAL CHARACTERISTICS (continued)
5-V Switchover Waveforms
3.3-V Switchover Waveforms
VREG5 (200mV/div)
VREG3 (200mV/div)
V
OUT2
(200mV/div)
V
OUT1
(200mV/div)
Figure 32.
5-V Soft-stop Waveforms
Figure 33.
3.3-V Soft-stop Waveforms
ENC (10 V/div)
ENC (10 V/div)
V
(2 V/div)
V
(2 V/div)
OUT2
OUT1
PGOOD (5 V/div)
PGOOD (5 V/div)
DRVL1 (5 V/div)
DRVL2 (5 V/div)
Figure 34.
Figure 35.
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APPLICATION INFORMATION
PWM Operations
The main control loop of the switch mode power supply (SMPS) is designed as an adaptive on-time pulse width
modulation (PWM) controller. It supports a proprietary D-CAP™ mode. D-CAP™ mode does not require external
compensation circuit and is suitable for low external component count configuration when used with appropriate
amount of ESR at the output capacitor(s).
At the beginning of each cycle, the synchronous top MOSFET is turned on, or becomes ‘ON’ state. This
MOSFET is turned off, or becomes ‘OFF’ state, after internal one shot timer expires. This one shot is determined
by VIN and VOUT to keep frequency fairly constant over input voltage range, hence it is called adaptive on-time
control. The MOSFET is turned on again when the feedback point voltage, VFB, decreased to match with internal
2-V reference. The inductor current information is also monitored and should be below the over current threshold
to initiate this new cycle. Repeating operation in this manner, the controller regulates the output voltage. The
synchronous bottom or the “rectifying” MOSFET is turned on at the beginning of each ‘OFF’ state to keep the
conduction loss minimum.The rectifying MOSFET is turned off before the top MOSFET turns on at next switching
cycle or when inductor current information detects zero level. In the auto-skip mode or the OOA skip mode, this
enables seamless transition to the reduced frequency operation at light load condition so that high efficiency is
kept over broad range of load current.
Adaptive On-Time Control and PWM Frequency
TPS51123 does not have a dedicated oscillator on board. However, the part runs with pseudo-constant
frequency by feed-forwarding the input and output voltage into the on-time, one-shot timer. The on-time is
controlled inverse proportional to the input voltage and proportional to the output voltage so that the duty ratio will
be kept as VOUT/VIN technically with the same cycle time. The frequencies are set by TONSEL terminal
connection as Table 2.
Table 2. TONSEL Connection and Switching Frequency
SWITCHING FREQUENCY (kHz)
TONSEL CONNECTION
CH1
200
245
300
365
CH2
250
305
375
460
GND
VREF
VREG3
VREG5
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Loop Compensation
From small-signal loop analysis, a buck converter using D-CAPTM mode can be simplified as below.
VIN
R1
DRVH
DRVL
Lx
IL
PWM
Control
logic
&
VFB
Ic
Io
+
Driver
+
R2
2V
ESR
Co
Vc
RL
Voltage Divider
Switching Modulator
Output Capacitor
Figure 36. Simplifying the Modulator
The output voltage is compared with internal reference voltage after divider resistors, R1 and R2. The PWM
comparator determines the timing to turn on high-side MOSFET. The gain and speed of the comparator is high
enough to keep the voltage at the beginning of each on cycle substantially constant. For the loop stability, the
0dB frequency, f0, defined below need to be lower than 1/4 of the switching frequency.
f
1
SW
f =
£
0
2p´ESR ´C
4
O
(1)
As f0 is determined solely by the output capacitor's characteristics, loop stability of D-CAPTM mode is determined
by the capacitor's chemistry. For example, specialty polymer capacitors (SP-CAP) have Co in the order of
several 100 µF and ESR in range of 10 mΩ. These make f0 on the order of 100 kHz or less and the loop will be
stable. However, ceramic capacitors have f0 at more than 700 kHz, which is not suitable for this operational
mode.
Ramp Signal
The TPS51123 adds a ramp signal to the 2-V reference in order to improve its jitter performance. As described in
the previous section, the feedback voltage is compared with the reference information to keep the output voltage
in regulation. By adding a small ramp signal to the reference, the S/N ratio at the onset of a new switching cycle
is improved. Therefore the operation becomes less jitter and stable. The ramp signal is controlled to start with
-20mV at the beginning of ON-cycle and to become 0 mV at the end of OFF-cycle in steady state. By using this
scheme, the TPS51123 improve jitter performance without sacrificing the reference accuracy.
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Light Load Condition in Auto-Skip Operation
The TPS51123 automatically reduces switching frequency at light load conditions to maintain high efficiency.
This reduction of frequency is achieved smoothly and without increase of VOUT ripple. Detail operation is
described as follows. As the output current decreases from heavy load condition, the inductor current is also
reduced and eventually comes to the point that its ‘valley’ touches zero current, which is the boundary between
continuous conduction and discontinuous conduction modes. The rectifying MOSFET is turned off when this zero
inductor current is detected. As the load current further decreased, the converter runs in discontinuous
conduction mode and it takes longer and longer to discharge the output capacitor to the level that requires next
‘ON’ cycle. The ON time is kept the same as that in the heavy load condition. In reverse, when the output current
increase from light load to heavy load, switching frequency increases to the preset value as the inductor current
reaches to the continuous conduction. The transition load point to the light load operation IOUT(LL) (i.e. the
threshold between continuous and discontinuous conduction mode) can be calculated as follows;
V
- V
´ V
(
)
OUT OUT
V
IN
1
IN
I
=
´
OUT(LL)
2 ´L ´ f
(2)
where f is the PWM switching frequency.
Switching frequency versus output current in the light load condition is a function of L, VIN and VOUT, but it
decreases almost proportional to the output current from the IOUT(LL) shown in Equation 2. For example, it ise 60
kHz at IOUT(LL)/5 if the frequency setting is 300 kHz.
Out-of-Audio™ Light-Load Operation
Out-of-Audio™ (OOA) light-load mode is a unique control feature that keeps the switching frequency above
acoustic audible frequencies toward virtually no load condition while maintaining best of the art high conversion
efficiency. When the Out-of-Audio™ operation is selected, OOA control circuit monitors the states of both
MOSFET and force to change into the ‘ON’ state if both of MOSFETs are off for more than 32 µs. This means
that the top MOSFET is turned on even if the output voltage is higher than the target value so that the output
capacitor is tends to be overcharged.
The OOA control circuit detects the over-voltage condition and begins to modulate the on time to keep the output
voltage regulated. As a result, the output voltage becomes 0.5% higher than normal light-load operation.
Enable and Soft Start
EN0 is the control pin of VREG5, VREG3 and VREF regulators. Bring this node down to GND disables those
three regulators and minimize the shutdown supply current to 10 µA. Pulling this node up to 3.3 V or 5 V will turn
the three regulators on to standby mode. The two switch mode power supplies (channel-1, channel-2) become
ready to enable at this standby mode. The TPS51123 has an internal, 1.6 ms, voltage servo softstart for each
channel. When the ENC pin becomes higher than the enable threshold voltage, which is typically 1.26 V, an
internal DAC begins ramping up the reference voltage to both of the PWM comparators at the same time.
Smooth control of the output voltage is maintained during start up.
Table 3. Enabling State
EN0
GND
Open
Open
ENC
Don’t Care
Off
VREF
Off
VREG5
Off
VREG3
Off
CH1
Off
CH2
Off
On
On
On
Off
Off
On
On
On
On
On
On
VREG5/VREG3 Linear Regulators
There are two sets of 100-mA standby linear regulators which outputs 5 V and 3.3 V, respectively. The VREG5
serves as the main power supply for the analog circuitry of the device and provides the current for gate drivers.
The VREG3 is intended mainly for auxiliary 3.3-V supply for the notebook system during standby mode.
Add a ceramic capacitor with a value of at least 33 µF and place it close to the VREG5 pin, and add at most
10 µF to the VREG3 pin. Total capacitance connected to the VREG3 pin should not exceed 10 µF .
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VREG5 Switch Over
When the VO1 voltage becomes higher than 4.7 V AND channel-1 internal powergood flag is generated, internal
5-V LDO regulator is shut off and the VREG5 output is connected to VO1 by internal switch over MOSFET. The
510-µs powergood delay helps a switch over without glitch.
VREG3 Switch Over
When the VO2 voltage becomes higher than 3.15 V AND channel-2 internal powergood flag is generated,
internal 3.3-V LDO regulator is shut off and the VREG3 output is connected to VO2 by internal switch over
MOSFET. The 510-µs powergood delay helps a switch over without glitch.
Powergood
The TPS51123 has one powergood output that indicates 'high' when both switcher outputs are within the targets
(AND gated). The powergood function is activated with 2-ms internal delay after ENC goes high. If the output
voltage becomes within ±5% of the target value, internal comparators detect power good state and the
powergood signal becomes high after 510-µs internal delay. Therefore PGOOD goes high around 2.5 ms after
ENC goes high. If the output voltage goes outside of ±10% of the target value, the powergood signal becomes
low after 2-µs internal delay. The powergood output is an open drain output and is needed to be pulled up
outside.
Also note that, in the case of Auto-skip or Out-of-Audio™ mode, if the output voltage goes +10% above the
target value and the power-good signal flags low, then the loop attempts to correct the output by turning on the
low-side driver (forced PWM mode). After the feedback voltage returns to be within +5% of the target value and
the power-good signal goes high, the controller returns back to auto-skip mode or Out-of-Audio™ mode.
Output Discharge Control
When ENC is low, the TPS51123 discharges outputs using internal MOSFET which is connected to VOx and
GND. The current capability of these MOSFETs is limited to discharge slowly.
Low-Side Driver
The low-side driver is designed to drive high current low RDS(on) N-channel MOSFET(s). The drive capability is
represented by its internal resistance, which are 4 Ω for VREG5 to DRVLx and 1.5 Ω for DRVLx to GND. A dead
time to prevent shoot through is internally generated between top MOSFET off to bottom MOSFET on, and
bottom MOSFET off to top MOSFET on. 5-V bias voltage is delivered from VREG5 supply. The instantaneous
drive current is supplied by an input capacitor connected between VREG5 and GND. The average drive current
is equal to the gate charge at Vgs = 5 V times switching frequency. This gate drive current as well as the
high-side gate drive current times 5 V makes the driving power which need to be dissipated from TPS51123
package.
High-Side Driver
The high-side driver is designed to drive high current, low RDS(on) N-channel MOSFET(s). When configured as a
floating driver, 5-V bias voltage is delivered from VREG5 supply. The average drive current is also calculated by
the gate charge at Vgs = 5 V times switching frequency. The instantaneous drive current is supplied by the flying
capacitor between VBSTx and LLx pins. The drive capability is represented by its internal resistance, which are 4
Ω for VBSTx to DRVHx and 1.5Ω for DRVHx to LLx.
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Current Protection
TPS51123 has cycle-by-cycle over current limiting control. The inductor current is monitored during the ‘OFF’
state and the controller keeps the ‘OFF’ state during the inductor current is larger than the over current trip level.
In order to provide both good accuracy and cost effective solution, TPS51123 supports temperature
compensated MOSFET RDS(on) sensing. The TRIPx pin should be connected to GND through the trip voltage
setting resistor, RTRIP. TRIPx terminal sources ITRIP current, which is 10 µA typically at room temperature, and the
trip level is set to the OCL trip voltage VTRIP as below. Note that the VTRIP is limited up to about 205 mV
internally.
R
kW ´I mA
TRIP ( ) TRIP ( )
V mV =
TRIP ( )
- 24 mV
( )
9
(3)
Note that when TRIPx voltage is under a certain thershould (typically 0.4V), the switcher channel concerned is
shut down. The inductor current is monitored by the voltage between GND pin and LLx pin so that LLx pin should
be connected to the drain terminal of the bottom MOSFET properly. Itrip has 4500 ppm/°C temperature slope to
compensate the temperature dependency of the RDS(on). GND is used as the positive current sensing node so
that GND should be connected to the proper current sensing device, i.e. the source terminal of the bottom
MOSFET.
As the comparison is done during the ‘OFF’ state, VTRIP sets valley level of the inductor current. Thus, the load
current at over current threshold, IOCP, can be calculated as follows;
V
- V
´ V
(
)
OUT OUT
V
IN
V
I
V
TRIP
1
IN
TRIP
RIPPLE
I
=
+
=
+
´
OCP
R
2
R
2´L ´ f
DS on
DS on
( )
( )
(4)
In an over current condition, the current to the load exceeds the current to the output capacitor thus the output
voltage tends to fall down. Eventually, it ends up with crossing the under voltage protection threshold and
shutdown both channels.
Overvoltage and Undervoltage Protection
TPS51123 monitors a resistor divided feedback voltage to detect over and under voltage. When the feedback
voltage becomes higher than 115% of the target voltage, the OVP comparator output goes high and the circuit
latches as the top MOSFET driver OFF and the bottom MOSFET driver ON.
Also, TPS51123 monitors VOx voltage directly and if it becomes greater than 5.75 V the TPS51123 turns off the
top MOSFET driver.
When the feedback voltage becomes lower than 60% of the target voltage, the UVP comparator output goes
high and an internal UVP delay counter begins counting. After 32 µs, TPS51123 latches OFF both top and
bottom MOSFETs drivers, and shut off both drivers of another channel. This function is enabled after 2 ms
following ENC has become high.
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UVLO Protection
TPS51123 has VREG5 under voltage lock out protection (UVLO). When the VREG5 voltage is lower than UVLO
threshold voltage both switch mode power supplies are shut off. This is non-latch protection. When the VREG3
voltage is lower than (VO2 - 1 V), both switch mode power supplies are also shut off
Thermal Shutdown
TPS51123 monitors the temperature of itself. If the temperature exceeds the threshold value (typically 150°C),
TPS51123 is shut off including LDOs. This is non-latch protection.
External Parts Selection
The external components selection is much simple in D-CAP™ Mode.
1. Determine output voltage
The output voltage is programmed by the voltage-divider resistor, R1 and R2, as shown in Figure 36. R1 is
connected between VFBx pin and the output, and R2 is connected betwen the VFBx pin and GND.
Recommended R2 value is from 10 kΩ to 20 kΩ. Determine R1 using equation as below.
V
(
- 2.0
)
OUT
R1=
´R2
2.0
(5)
2. Choose the Inductor
The inductance value should be determined to give the ripple current of approximately 1/4 to 1/2 of maximum
output current. Larger ripple current increases output ripple voltage and improves S/N ratio and helps stable
operation.
V
(
- V
´ V
)
V
(
- V
´ V
)
OUT
OUT
IN max
OUT
OUT
V
IN max
IN max
(
IN max
(
)
)
1
3
L =
´
=
´
I
´ f
V
I
´ f
IND ripple
(
OUT max
(
)
(
)
)
(
)
(6)
The inductor also needs to have low DCR to achieve good efficiency, as well as enough room above peak
inductor current before saturation. The peak inductor current can be estimated as follows.
V
(
- VOUT ´ VOUT
)
IN max
(
)
V
1
TRIP
I
=
+
´
IND peak
(
)
R
L ´ f
V
IN max
DS on
( )
(
)
(7)
3. Choose the Output Capacitor(s)
Organic semiconductor capacitor(s) or specialty polymer capacitor(s) are recommended. Determine ESR to meet
required ripple voltage. A quick approximation is as shown in Equation 8. This equation is based on that required
output ripple slope is approximately 20 mV per TSW (switching period) in terms of VFB terminal voltage.
V
´20 mV ´ 1-D
( ) (
20 mV ´L ´ f
( )
2 V
( )
)
OUT
ESR =
-
2 V ´I
( )
RIPPLE
(8)
where
•
D is the duty cycle
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Layout Considerations
Certain points must be considered before starting a layout work using the TPS51123.
•
TPS51123 has only one GND pin and special care of GND trace design makes operation stable, especially
when both channels operate. Group GND terminals of output voltage divider of both channels and the VREF
capacitor as close as possible, and connect them to an inner GND plane with PowerPad and the overcurrent
setting resistor, as shown in the thin GND line of Figure 37. This trace is named Signal Ground (SGND).
Group ground terminals of VIN capacitor(s), VOUT capacitor(s) and source of low-side MOSFETs as close as
possible, and connect them to another inner GND plane with GND pin of the device and the GND terminal of
VREG3 and VREG5 capacitors, as shown in the bold GND line of Figure 37. This trace is named Power
Ground (PGND). SGND should be connected to PGND at the middle point between ground terminal of VOUT
capacitors.
•
Inductor, VOUT capacitor(s), VIN capacitor(s) and MOSFETs are the power components and should be
placed on one side of the PCB (solder side). Power components of each channel should be at the same
distance from the TPS51123. Other small signal parts should be placed on another side (component side).
Inner GND planes should shield and isolate the small signal traces from noisy power lines.
•
•
PCB trace defined as LLx node, which connects to source of high-side MOSFET, drain of low-side MOSFET
and high-voltage side of the inductor, should be as short and wide as possible.
VREG5 requires capacitance of at least 33-µF and VREG3 requires capacitance of at most 10-µF. VREF
requires a 220-nF ceramic bypass capacitor which should be placed close to the device and traces should be
no longer than 10 mm.
•
•
Connect the overcurrent setting resistors from TRIPx to SGND and close to the device, right next to the
device if possible.
The discharge path (VOx) should have a dedicated trace to the output capacitor; separate from the output
voltage sensing trace. When LDO5 is switched over Vo1 trace should be 1.5 mm with no loops. When LDO3
is switched over and loaded Vo2 trace should also be 1.5 mm with no loops. There is no restriction for just
monitoring Vox. Make the feedback current setting resistor (the resistor between VFBx to SGND) close to the
device. Place on the component side and avoid vias between this resistor and the device.
•
•
Connections from the drivers to the respective gate of the high-side or the low-side MOSFET should be as
short as possible to reduce stray inductance. Use 0.65-mm (25 mils) or wider trace and via(s) of at least 0.5
mm (20 mils) diameter along this trace.
All sensitive analog traces and components such as VOx, VFBx, VREF, GND, EN0, TRIPx, PGOOD,
TONSEL and SKIPSEL should be placed away from high-voltage switching nodes such as LLx, DRVLx, and
DRVHx nodes to avoid coupling.
•
•
Traces for VFB1 and VFB2 should be short and laid apart each other to avoid channel to channel
interference.
In order to effectively remove heat from the package, prepare thermal land and solder to the package’s
thermal pad. Three by three or more vias with a 0.33-mm (13 mils) diameter connected from the thermal land
to the internal ground plane should be used to help dissipation. This thermal land underneath the package
should be connected to SGND, and should NOT be connected to PGND.
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SGND
V
V
IN
IN
220 nF
5
3
2
VFB2
VREF
VFB1
V
V
OUT1
OUT2
DRVL2
DRVL1
5
19
TPS51123
VREG5
GND
PowerPAD
VREG3
PGND
PGND
17
15
8
33 mF
10 mF
SGND
UDG-08166
Figure 37. GND system of DC/DC converter using the TPS51123
Application Circuit
SGND
R1
13kW
R4
30kW
R2
20kW
R3
20kW
C6
0.22mF
R5
130kW
R6
130kW
3.3V/100mA
SGND
SGND
VIN
VIN
6
5
4
3
2
1
VIN
5.5 ~ 28V
C1
10mF
C2
10mF
C8
10mF
C9
10mF
7
8
9
VO2
VO1 24
R8
100kW
C3
10mF
VREG5
VREG3
VBST2
PGOOD 23
VBST1 22
DRVH1 21
LL1 20
PGND
PGND
L2
PGND
C7
0.1mF
Q1
IRF7821
C4
0.1mF
Q3
IRF7821
R7
5.1W
R9
5.1W
TPS51123RGE
(QFN24)
L1
3.3mH
3.3mH
10 DRVH2
11 LL2
VO2
VO1
5V/8A
3.3V/8A
PowerPAD
C10
POSCAP
330mF
C5
POSCAP
330mF
Q2
FDS6690AS
Q4
FDS6690AS
12 DRVL2
DRVL1 19
VO2_GND
VO1_GND
5V/100mA
13
14
15
16
17
18
PGND
PGND
PGND
PGND
SGND
VREG5
EN0
ENC
C11
33mF
SGND PGND
PGND
UDG-08165
Figure 38. 5-V/8-A, 3.3-V/8-A Application Circuit (245-kHz/305-kHz Setting)
Copyright © 2008, Texas Instruments Incorporated
Submit Documentation Feedback
25
Product Folder Link(s): TPS51123
TPS51123
SLUS890–DECEMBER 2008 ........................................................................................................................................................................................... www.ti.com
List of Materials for 5-V/8-A, 3.3-V/8-A Application Circuit
REFERENCE
DESIGNATOR
SPECIFICATION
MANUFACTURER
PART NUMBER
C1, C2, C8, C9
C3
10 µF/25 V
Taiyo Yuden
TDK
TMK325BJ106MM
C2012X5R0J106K
C3216X5RBJ336M
6TPE330ML
10 µF/6.3 V
C11
33 µF/6.3V
TDK
C5, C10
L1, L2
330 µF/6.3 V/25 mΩ
3.3 µH, 15.6 A, 5.92 mΩ
30 V, 9.5 mΩ
Sanyo
TOKO
IR
FDA1055-3R3M
IRF7821
Q1, Q3
Q2, Q4(1)
30 V, 12 mΩ
Fairchild
FDS6690AS
(1) Use a MOSFET with an integrated Schottky barrier diode (SBD) for the low-side, or add an SBD in parallel with a normal MOSFET.
26
Submit Documentation Feedback
Copyright © 2008, Texas Instruments Incorporated
Product Folder Link(s): TPS51123
PACKAGE OPTION ADDENDUM
www.ti.com
23-Dec-2008
PACKAGING INFORMATION
Orderable Device
TPS51123RGER
TPS51123RGET
Status (1)
ACTIVE
ACTIVE
Package Package
Pins Package Eco Plan (2) Lead/Ball Finish MSL Peak Temp (3)
Qty
Type
Drawing
VQFN
RGE
24
3000 Green (RoHS & CU NIPDAU Level-2-260C-1 YEAR
no Sb/Br)
VQFN
RGE
24
250 Green (RoHS & CU NIPDAU Level-2-260C-1 YEAR
no Sb/Br)
(1) The marketing status values are defined as follows:
ACTIVE: Product device recommended for new designs.
LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect.
NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in
a new design.
PREVIEW: Device has been announced but is not in production. Samples may or may not be available.
OBSOLETE: TI has discontinued the production of the device.
(2)
Eco Plan - The planned eco-friendly classification: Pb-Free (RoHS), Pb-Free (RoHS Exempt), or Green (RoHS & no Sb/Br) - please check
http://www.ti.com/productcontent for the latest availability information and additional product content details.
TBD: The Pb-Free/Green conversion plan has not been defined.
Pb-Free (RoHS): TI's terms "Lead-Free" or "Pb-Free" mean semiconductor products that are compatible with the current RoHS requirements
for all 6 substances, including the requirement that lead not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered
at high temperatures, TI Pb-Free products are suitable for use in specified lead-free processes.
Pb-Free (RoHS Exempt): This component has a RoHS exemption for either 1) lead-based flip-chip solder bumps used between the die and
package, or 2) lead-based die adhesive used between the die and leadframe. The component is otherwise considered Pb-Free (RoHS
compatible) as defined above.
Green (RoHS & no Sb/Br): TI defines "Green" to mean Pb-Free (RoHS compatible), and free of Bromine (Br) and Antimony (Sb) based flame
retardants (Br or Sb do not exceed 0.1% by weight in homogeneous material)
(3)
MSL, Peak Temp. -- The Moisture Sensitivity Level rating according to the JEDEC industry standard classifications, and peak solder
temperature.
Important Information and Disclaimer:The information provided on this page represents TI's knowledge and belief as of the date that it is
provided. TI bases its knowledge and belief on information provided by third parties, and makes no representation or warranty as to the
accuracy of such information. Efforts are underway to better integrate information from third parties. TI has taken and continues to take
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information may not be available for release.
In no event shall TI's liability arising out of such information exceed the total purchase price of the TI part(s) at issue in this document sold by TI
to Customer on an annual basis.
Addendum-Page 1
PACKAGE MATERIALS INFORMATION
www.ti.com
22-Dec-2008
TAPE AND REEL INFORMATION
*All dimensions are nominal
Device
Package Package Pins
Type Drawing
SPQ
Reel
Reel
A0 (mm)
B0 (mm)
K0 (mm)
P1
W
Pin1
Diameter Width
(mm) W1 (mm)
(mm) (mm) Quadrant
TPS51123RGER
TPS51123RGET
VQFN
VQFN
RGE
RGE
24
24
3000
250
330.0
180.0
12.4
12.4
4.3
4.3
4.3
4.3
1.5
1.5
8.0
8.0
12.0
12.0
Q2
Q2
Pack Materials-Page 1
PACKAGE MATERIALS INFORMATION
www.ti.com
22-Dec-2008
*All dimensions are nominal
Device
Package Type Package Drawing Pins
SPQ
Length (mm) Width (mm) Height (mm)
TPS51123RGER
TPS51123RGET
VQFN
VQFN
RGE
RGE
24
24
3000
250
346.0
190.5
346.0
212.7
29.0
31.8
Pack Materials-Page 2
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