ISO6760LDWR [TI]
ISO6760L Six-Channel Reinforced Digital Isolators with Integrated Interlock and Robust EMC;型号: | ISO6760LDWR |
厂家: | TEXAS INSTRUMENTS |
描述: | ISO6760L Six-Channel Reinforced Digital Isolators with Integrated Interlock and Robust EMC |
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中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
ISO6760L
SLLSFO3 – DECEMBER 2021
ISO6760L Six-Channel Reinforced Digital Isolators with Integrated Interlock and
Robust EMC
1 Features
3 Description
•
ISO6760 with integrated Interlock function
– Designed to support opposite polarity of
adjacent channels
– Three sets of paired interlock channels
Robust isolation barrier:
– High lifetime at 1500 VRMS working voltage
– Up to 5000 VRMS isolation rating
– Up to 10 kV surge capability
– ±130 kV/μs typical CMTI
Wide supply range: 1.71 V to 1.89 V and 2.25 V to
5.5 V
Channel output non-inverting (ISO6760L) and
inverting (ISO6760LN) options
50 Mbps data rate
The ISO6760L and ISO6760LN devices are high-
performance, six-channel digital isolators with
integrated interlock function for applications requiring
up to 5000 VRMS isolation ratings per UL 1577. These
devices are also certified by VDE, TUV, CSA, and
CQC.
•
The ISO6760L family of devices integrate a series of
logic gates to provide hardware interlock functionality
for adjacent channels. The interlock feature ensures
that each channel, in a channel pairing, will not be
enabled at the same time. If both channels in the
pairing share the same input logic, the output logic will
always be low. The ISO6760L family of devices have
all six channels in the same direction and provide
high electromagnetic immunity and low emissions at
low power consumption, while isolating CMOS or
LVCMOS digital I/Os. Each isolation channel has a
logic input and output buffer separated by TI's double
capacitive silicon dioxide (SiO2) insulation barrier.
•
•
•
•
•
•
•
1.71 V to 5.5 V level translation
Wide temperature range: –40°C to 125°C
1.4 mA per channel typical at 1 Mbps
Robust electromagnetic compatibility (EMC)
– System-level ESD, EFT, and surge immunity
– Low emissions
Used in conjunction with intelligent power modules
(IPMs), the interlock feature in these devices help
prevent shoot through current between the high
side and low side gate driver during turn on
and turn off events. Six channels, including three
pairings of interlock circuitry, are integrated in a
16-pin SOIC wide-body (DW) package with space
savings greater than 50% compared to optocoupler
solutions. Through innovative chip design and layout
techniques, the electromagnetic compatibility of the
ISO6760L devices has been significantly enhanced to
ease system-level ESD, EFT, surge, and emissions
compliance.
•
•
Wide-SOIC (DW-16) Package
Safety-Related Certifications (pending):
– DIN VDE V 0884-11:2017-01
– UL 1577 component recognition program
– IEC 62368-1, IEC 61010-1, IEC 60601-1 and
GB 4943.1-2011 certifications
2 Applications
•
•
•
•
Motor drives
Appliances
Grid
Building Automation
Device Description
Part Number
ISO6760L,
Package
SOIC (DW)
ISO6760L
Body Size
10.30 mm × 7.50
mm
ISO6760LN
IPM
VCC1
1
2
3
4
5
6
7
8
16 VCC2
I
N
T
E
R
L
O
C
K
High side
gate driver
INA_H
INA_L
INB_H
INB_L
INC_H
INC_L
GND1
OUTA_H
OUTA_L
OUTB_H
OUTB_L
OUTC_H
OUTC_L
GND2
15
14
13
12
11
10
9
Level
shift
High side
gate driver
I
High side
gate driver
N
T
E
R
L
O
C
K
C2000
MCU
3
phase
IGBT
M
inverter
I
N
T
E
R
L
O
C
K
Low side
gate driver
Simplified Schematic
An IMPORTANT NOTICE at the end of this data sheet addresses availability, warranty, changes, use in safety-critical applications,
intellectual property matters and other important disclaimers. PRODUCTION DATA.
ISO6760L
SLLSFO3 – DECEMBER 2021
www.ti.com
Table of Contents
1 Features............................................................................1
2 Applications.....................................................................1
3 Description.......................................................................1
4 Revision History.............................................................. 2
5 Pin Configuration and Functions...................................3
6 Specifications.................................................................. 4
6.1 Absolute Maximum Ratings........................................ 4
6.2 ESD Ratings............................................................... 4
6.3 Recommended Operating Conditions.........................5
6.4 Thermal Information....................................................6
6.5 Power Ratings.............................................................6
6.6 Insulation Specifications............................................. 7
6.7 Safety-Related Certifications...................................... 8
6.8 Safety Limiting Values.................................................8
Electrical Characteristics—5-V Supply............................. 9
6.9 Supply Current Characteristics—5-V Supply..............9
6.10 Electrical Characteristics—3.3-V Supply................ 10
6.11 Supply Current Characteristics—3.3-V Supply....... 10
6.12 Electrical Characteristics—2.5-V Supply ................11
6.13 Supply Current Characteristics—2.5-V Supply....... 11
Electrical Characteristics—1.8-V Supply........................ 12
6.14 Supply Current Characteristics—1.8-V Supply.......12
6.15 Switching Characteristics—5-V Supply...................13
6.16 Switching Characteristics—3.3-V Supply................14
6.17 Switching Characteristics—2.5-V Supply................15
6.18 Switching Characteristics—1.8-V Supply................16
6.19 Insulation Characteristics Curves........................... 17
6.20 Typical Characteristics............................................18
7 Parameter Measurement Information..........................19
8 Detailed Description......................................................20
8.1 Overview...................................................................20
8.2 Functional Block Diagram.........................................20
8.3 Feature Description...................................................21
8.4 Device Functional Modes..........................................23
9 Application and Implementation..................................24
9.1 Application Information............................................. 24
9.2 Typical Application.................................................... 25
10 Insulation Lifetime ......................................................28
11 Power Supply Recommendations..............................29
12 Layout...........................................................................30
12.1 Layout Guidelines................................................... 30
12.2 Layout Example...................................................... 31
13 Device and Documentation Support..........................32
13.1 Documentation Support.......................................... 32
13.2 Receiving Notification of Documentation Updates..32
13.3 Support Resources................................................. 32
13.4 Trademarks.............................................................32
13.5 Electrostatic Discharge Caution..............................32
13.6 Glossary..................................................................32
14 Mechanical, Packaging, and Orderable
Information.................................................................... 32
14.1 Package Option Addendum....................................35
14.2 Tape and Reel Information......................................36
4 Revision History
NOTE: Page numbers for previous revisions may differ from page numbers in the current version.
Date
Revision
Notes
December 2021
*
Initial Release
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5 Pin Configuration and Functions
VCC1
INA_H
1
2
3
4
5
6
16
15
14
13
12
11
10
9
VCC2
OUTA_H
OUTA_L
OUTB_H
OUTB_L
INA_L
INB_H
INB_L
INC_H
INC_L
GND1
OUTC_H
OUTC_L
GND2
7
8
Not to scale
Figure 5-1. ISO6760L DW Package 16-Pin SOIC-WB Top View
Table 5-1. Pin Functions
PIN
I/O
DESCRIPTION
NAME
GND1
GND2
INA_H
INA_L
INB_H
INB_L
ISO6760L
8
9
2
3
4
5
—
Ground connection for VCC1
Ground connection for VCC2
—
I
I
I
I
Input, channel A_H (Interlock paired with channel A_L)
Input, channel A_L (Interlock paired with channel A_H)
Input, channel B_H (Interlock paired with channel B_L)
Input, channel B_L (Interlock paired with channel B_H)
INC_H
INC_L
6
7
I
I
Input, channel C_H (Interlock paired with channel C_L)
Input, channel C_L (Interlock paired with channel C_H)
OUTA_H
OUTA_L
OUTB_H
OUTB_L
15
14
13
12
11
O
O
O
O
O
Output, channel A_H (Interlock paired with channel A_L)
Output, channel A_L (Interlock paired with channel A_H)
Output, channel B_H (Interlock paired with channel B_L)
Output, channel B_L (Interlock paired with channel B_H)
OUTC_H
OUTC_L
Output, channel C_H (Interlock paired with channel C_L)
Output, channel C_L (Interlock paired with channel C_H)
10
O
VCC1
VCC2
1
—
—
Power supply, side 1
Power supply, side 2
16
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6 Specifications
6.1 Absolute Maximum Ratings
See(1)
MIN
-0.5
-0.5
-0.5
-0.5
-15
MAX
UNIT
VCC1 to GND1
Supply Voltage (2)
6
V
V
VCC2 to GND2
6
VCCX + 0.5 (3)
VCCX + 0.5 (3)
15
INx to GNDx
Input/Output
Voltage
OUTx to GNDx
Output Current
Io
mA
°C
Operating junction temperature, TJ
Storage temperature, Tstg
150
Temperature
-65
150
°C
(1) Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress
ratings only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under
Recommended Operating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device
reliability.
(2) All voltage values except differential I/O bus voltages are with respect to the local ground terminal (GND1 or GND2) and are peak
voltage values
(3) Maximum voltage must not exceed 6 V.
6.2 ESD Ratings
(1) (2)
VALUE
UNIT
Human body model (HBM), per ANSI/
ESDA/JEDEC JS-001, all pins(1)
Electrostatic discharge
Electrostatic discharge
±2000
V(ESD)
V
Charged device model (CDM), per
JEDEC specification JESD22-C101, all
pins(2)
±1500
(1) JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.
(2) JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process.
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6.3 Recommended Operating Conditions
MIN
1.71
2.25
1.71
2.25
NOM
MAX
1.89
5.5
UNIT
(1)
VCC1
VCC1
VCC2
VCC2
Vcc
Supply Voltage Side 1(3)
Supply Voltage Side 1(3)
Supply Voltage Side 2(3)
Supply Voltage Side 2(3)
V
V
V
V
(1)
(1)
(1)
1.89
5.5
UVLO threshold when supply voltage is rising
UVLO threshold when supply voltage is falling
Supply voltage UVLO hysteresis
1.53
1.41
0.13
1.71
V
V
V
V
(UVLO+)
Vcc
1.1
(UVLO-)
Vhys
0.08
(UVLO)
0.7 x VCC(2I)
VIH
VIL
High level Input voltage
VCCI
Low level Input voltage
0
-4
-2
-1
-1
0.3 x VCCI
V
mA
mA
mA
mA
mA
mA
mA
mA
Mbps
Mbps
°C
(2)
VCCO
= 5 V
VCCO = 3.3 V
VCCO = 2.5 V
VCCO = 1.8 V
VCCO = 5 V
IOH
High level output current
Low level output current
4
2
VCCO = 3.3 V
VCCO = 2.5 V
VCCO = 1.8 V
VCC = 2.25 V to 5.5 V
VCC = 1.71 V to 1.89 V
IOL
1
1
0
0
50
25
125
DR
TA
Data Rate
Ambient temperature
-40
25
(1) VCC1 and VCC2 can be set independent of one another
(2) VCCI = Input-side VCC; VCCO = Output-side VCC
(3) The channel outputs are in undetermined state when 1.89 V < VCC1, VCC2 < 2.25 V and 1.05 V < VCC1, VCC2 < 1.71 V
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UNIT
SLLSFO3 – DECEMBER 2021
6.4 Thermal Information
ISO6760L
DW (SOIC)
16 PINS
68.8
THERMAL METRIC (1)
RθJA
Junction-to-ambient thermal resistance
Junction-to-case (top) thermal resistance
Junction-to-board thermal resistance
°C/W
°C/W
°C/W
°C/W
°C/W
°C/W
RθJC(top)
RθJB
31.8
32.7
ψJT
Junction-to-top characterization parameter
Junction-to-board characterization parameter
Junction-to-case (bottom) thermal resistance
13.5
ψJB
32.1
RθJC(bot)
n/a
6.5 Power Ratings
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
ISO6760L
PD
Maximum power dissipation (both sides)
Maximum power dissipation (side-1)
Maximum power dissipation (side-2)
200
45
mW
mW
mW
VCC1 = VCC2 = 5.5 V, TJ = 150°C, CL =
15 pF, Input a 25-MHz 50% duty cycle
square wave
PD1
PD2
155
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6.6 Insulation Specifications
VALUE
UNIT
DW-16
PARAMETER
TEST CONDITIONS
CLR
CPG
External clearance(1)
External creepage(1)
Shortest terminal-to-terminal distance through air
>8
>8
mm
mm
Shortest terminal-to-terminal distance across the
package surface
DTI
CTI
Distance through the insulation
Comparative tracking index
Material group
Minimum internal gap (internal clearance)
DIN EN 60112 (VDE 0303-11); IEC 60112
According to IEC 60664-1
>17
>600
I
um
V
Rated mains voltage ≤ 600 VRMS
Rated mains voltage ≤ 1000 VRMS
I-IV
I-III
Overvoltage category per IEC 60664-1
DIN VDE V 0884-11:2017-01(2)
VIORM Maximum repetitive peak isolation voltage
AC voltage (bipolar)
2121
1500
2121
VPK
VRMS
VDC
AC voltage; Time dependent dielectric breakdown
(TDDB) Test;
See Insulation Lifetime Projection Data
VIOWM
Maximum working isolation voltage
DC voltage
VTEST = VIOTM
t = 60 s (qualification);
VTEST = 1.2 x VIOTM
,
VIOTM
Maximum transient isolation voltage
Maximum surge isolation voltage(3)
7071
VPK
,
t= 1 s (100% production)
Test method per IEC 62368-1, 1.2/50 µs waveform,
VTEST = 1.6 x VIOSM = 10,000 VPK (qualification)
VIOSM
6250
≤5
VPK
Method a, After Input-output safety test subgroup 2/3,
Vini = VIOTM, tini = 60 s;
Vpd(m) = 1.2 x VIORM, tm = 10 s
Method a, After environmental tests subgroup 1,
Vini = VIOTM, tini = 60 s;
Vpd(m) = 1.6 x VIORM, tm = 10 s
≤5
≤5
qpd
Apparent charge(4)
pC
Method b1; At routine test (100% production) and
preconditioning (type test)
Vini = 1.2 x VIOTM, tini = 1 s;
Vpd(m) = 1.875 x VIORM, tm = 1 s
CIO
RIO
Barrier capacitance, input to output(5)
Isolation resistance(5)
VIO = 0.4 x sin (2πft), f = 1 MHz
VIO = 500 V, TA = 25°C
~1
pF
Ω
>1012
>1011
>109
2
VIO = 500 V, 100°C ≤ TA ≤ 125°C
VIO = 500 V at TS = 150°C
Pollution degree
Climatic category
40/125/21
UL 1577
VTEST = VISO , t = 60 s (qualification),
VTEST = 1.2 x VISO , t = 1 s (100% production)
VISO
Maximum withstanding isolation voltage
5000
VRMS
(1) Creepage and clearance requirements should be applied according to the specific equipment isolation standards of an application.
Care should be taken to maintain the creepage and clearance distance of a board design to ensure that the mounting pads of
the isolator on the printed-circuit board do not reduce this distance. Creepage and clearance on a printed-circuit board become
equal in certain cases. Techniques such as inserting grooves and/or ribs on a printed-circuit board are used to help increase these
specifications.
(2) This coupler is suitable for safe electrical insulation only within the safety ratings. Compliance with the safety ratings shall be ensured
by means of suitable protective circuits.
(3) Testing is carried out in air or oil to determine the intrinsic surge immunity of the isolation barrier.
(4) Apparent charge is electrical discharge caused by a partial discharge (pd).
(5) All pins on each side of the barrier tied together creating a two-terminal device.
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6.7 Safety-Related Certifications
VDE
CSA
UL
CQC
TUV
Plan to certify according
Plan to certify according to to EN 61010-1:2010/
Plan to certify according to Plan to certify according to Plan to certify according
DIN VDE V 0884-11:2017- IEC 62368-1, IEC 61010-1 to UL 1577 Component
GB4943.1-2011
A1:2019 and EN
62368-1:2014
01
and IEC 60601-1
Recognition Program
600 VRMS reinforced
insulation per CSA
62368-1:19 and IEC
62368-1:2018; 600 VRMS
reinforced insulation
per CSA 61010-1-12+A1
and IEC 61010-1 3rd
Ed (pollution degree 2,
material group I);
Maximum transient
isolation
5000 VRMS reinforced
insulation per EN
61010-1:2010/A1:2019
and EN 62368-1:2014 up
to working voltage of 600
VRMS
Reinforced insulation,
Altitude ≤ 5000 m, Tropical
Climate,
700 VRMS
maximum working voltage
voltage, 7071 VPK
;
Maximum repetitive peak
isolation
Single protection,
5000 VRMS
voltage, 2121 VPK
;
2 MOPP (Means of
Maximum surge isolation
voltage, 6250 VPK
Patient Protection) per
CSA 60601-1-14 and IEC
60601-1 Ed.3+A1, 250
VRMS max working voltage
Certificate planned
Certificate planned
Certificate planned
Certificate planned
Certificate planned
6.8 Safety Limiting Values
Safety limiting(1) intends to minimize potential damage to the isolation barrier upon failure of input or output circuitry.
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
DW-16 PACKAGE
RθJA =68.8°C/W, VI = 5.5 V, TJ = 150°C,
TA = 25°C
330
504
660
956
mA
mA
mA
mA
RθJA = 68.8°C/W, VI = 3.6 V, TJ = 150°C,
TA = 25°C
IS
Safety input, output, or supply current (1)
RθJA = 68.8°C/W, VI = 2.75 V, TJ = 150°C,
TA = 25°C
RθJA = 68.8°C/W, VI = 1.89 V, TJ = 150°C,
TA = 25°C
PS
TS
Safety input, output, or total power (1)
Maximum safety temperature (1)
RθJA = 68.8°C/W, TJ = 150°C, TA = 25°C
1820
150
mW
°C
(1) The maximum safety temperature, TS, has the same value as the maximum junction temperature, TJ, specified for the device. The
IS and PS parameters represent the safety current and safety power respectively. The maximum limits of IS and PS should not be
exceeded. These limits vary with the ambient temperature, TA.
The junction-to-air thermal resistance, RθJA, in the table is that of a device installed on a high-K test board for leaded surface-mount
packages. Use these equations to calculate the value for each parameter:
TJ = TA + RθJA × P, where P is the power dissipated in the device.
TJ(max) = TS = TA + RθJA × PS, where TJ(max) is the maximum allowed junction temperature.
PS = IS × VI, where VI is the maximum input voltage.
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Electrical Characteristics—5-V Supply
over recommended operating conditions (unless otherwise noted)
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX UNIT
IOH = -4 mA; See Switching
Characteristics Test Circuit and
Voltage Waveforms
VOH
High-level output voltage
VCCO - 0.4
V
IOL = 4 mA; See Switching
Characteristics Test Circuit and
Voltage Waveforms
VOL
Low-level output voltage
0.4
V
(1)
VIT+(IN)
VIT-(IN)
VI(HYS)
IIH
Rising input switching threshold
Falling input switching threshold
Input threshold voltage hysteresis
High-level input current
0.7 x VCCI
V
V
0.3 x VCCI
0.1 x VCCI
V
VIH = VCCI (1) at INx
VIL = 0 V at INx
10
µA
µA
IIL
Low-level input current
-10
50
VI = VCC or 0 V, VCM = 1200
V; see Common-Mode Transient
Immunity Test Circuit
CMTI
Ci
Common mode transient immunity
Input Capacitance (2)
130
2.8
kV/us
pF
VI = VCC/ 2 + 0.4×sin(2πft), f = 2
MHz, VCC = 5 V
(1) VCCI = Input-side VCC; VCCO = Output-side VCC
(2) Measured from input pin to same side ground.
6.9 Supply Current Characteristics—5-V Supply
VCC1 = VCC2 = 5 V ±10% (over recommended operating conditions unless otherwise noted).
SUPPLY
CURRENT
PARAMETER
ISO6760L
TEST CONDITIONS
MIN
TYP
MAX UNIT
ICC1
5.11
3.3
6.97
5.38
6.99
Output A: GND for ISO6760L and Vcc for ISO6760LN
Output B: Vcc for ISO6760L and GND for ISO6760LN
Supply current - DC signal
Supply current - AC signal
ICC2
ICC1
ICC2
ICC1
ICC2
ICC1
ICC2
5.13
3.7
1 Mbps
5.83
mA
7.19
5.29
7.27
6.12
23.62
All channels switching with square
10 Mbps
wave clock input; CL = 15 pF
9.9
8.16
50 Mbps
27.74
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6.10 Electrical Characteristics—3.3-V Supply
VCC1 = VCC2 = 3.3 V ±10% (over recommended operating conditions unless otherwise noted).
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX UNIT
IOH = -2 mA; See Switching
Characteristics Test Circuit and
Voltage Waveforms
VOH
High-level output voltage
VCCO - 0.2
V
IOL = 2 mA; See Switching
Characteristics Test Circuit and
Voltage Waveforms
VOL
Low-level output voltage
0.2
V
(1)
VIT+(IN)
VIT-(IN)
Rising input switching threshold
Falling input switching threshold
0.7 x VCCI
V
V
0.3 x VCCI
0.1 x VCCI
Input threshold voltage
hysteresis
VI(HYS)
V
IIH
IIL
High-level input current
Low-level input current
VIH = VCCI (1) at INx
VIL = 0 V at INx
10
µA
µA
-10
50
VI = VCC or 0 V, VCM = 1200
V; see Common-Mode Transient
Immunity Test Circuit
Common mode transient
immunity
CMTI
Ci
130
2.8
kV/us
pF
VI = VCC/ 2 + 0.4×sin(2πft), f = 2
MHz, VCC = 3.3 V
Input Capacitance(2)
(1) VCCI = Input-side VCC; VCCO = Output-side VCC
(2) Measured from input pin to same side ground.
6.11 Supply Current Characteristics—3.3-V Supply
VCC1 = VCC2 = 3.3 V ±10% (over recommended operating conditions unless otherwise noted).
SUPPLY
CURRENT
PARAMETER
ISO6760L
TEST CONDITIONS
MIN
TYP
MAX UNIT
ICC1
5.08
3.28
5.1
6.89
5.36
6.9
Output A: GND for ISO6760L and Vcc for ISO6760LN
Output B: Vcc for ISO6760L and GND for ISO6760LN
Supply current - DC signal
Supply current - AC signal
ICC2
ICC1
ICC2
ICC1
ICC2
ICC1
ICC2
1 Mbps
3.57
5.18
6.07
5.74
5.68
mA
7.04
All channels switching with square
10 Mbps
wave clock input; CL = 15 pF
8.62
7.68
21.5
50 Mbps
17.54
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6.12 Electrical Characteristics—2.5-V Supply
VCC1 = VCC2 = 2.5 V ±10% (over recommended operating conditions unless otherwise noted).
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX UNIT
IOH = -1 mA; See Switching
Characteristics Test Circuit and
Voltage Waveforms
VOH
High-level output voltage
VCCO - 0.1
V
IOL = 1 mA; See Switching
Characteristics Test Circuit and
Voltage Waveforms
VOL
Low-level output voltage
0.1
V
(1)
VIT+(IN)
VIT-(IN)
Rising input switching threshold
Falling input switching threshold
0.7 x VCCI
V
V
0.3 x VCCI
0.1 x VCCI
Input threshold voltage
hysteresis
VI(HYS)
V
IIH
IIL
High-level input current
Low-level input current
VIH = VCCI (1) at INx
VIL = 0 V at INx
10
µA
µA
-10
50
VI = VCC or 0 V, VCM = 1200
V; see Common-Mode Transient
Immunity Test Circuit
Common mode transient
immunity
CMTI
Ci
130
2.8
kV/us
pF
VI = VCC/ 2 + 0.4×sin(2πft), f = 2
MHz, VCC = 2.5 V
Input Capacitance(2)
(1) VCCI = Input-side VCC; VCCO = Output-side VCC
(2) Measured from input pin to same side ground.
6.13 Supply Current Characteristics—2.5-V Supply
VCC1 = VCC2 = 2.5 V ±10% (over recommended operating conditions unless otherwise noted).
SUPPLY
CURRENT
PARAMETER
ISO6760L
TEST CONDITIONS
MIN
TYP
MAX UNIT
ICC1
5.07
3.28
5.08
3.49
5.14
5.34
5.59
6.85
5.35
6.87
Output A: GND for ISO6760L and Vcc for ISO6760LN
Output B: Vcc for ISO6760L and GND for ISO6760LN
Supply current - DC signal
Supply current - AC signal
ICC2
ICC1
ICC2
ICC1
ICC2
ICC1
ICC2
1 Mbps
5.59
mA
6.97
All channels switching with square
10 Mbps
wave clock input; CL = 15 pF
7.8
7.49
25 Mbps
13.83
17.47
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Electrical Characteristics—1.8-V Supply
VCC1 = VCC2 = 1.8 V ±10% (over recommended operating conditions unless otherwise noted).
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX UNIT
IOH = -1 mA; See Switching
Characteristics Test Circuit and
Voltage Waveforms
VOH
High-level output voltage
VCCO - 0.1
V
IOL = 1 mA; See Switching
Characteristics Test Circuit and
Voltage Waveforms
VOL
Low-level output voltage
0.1
V
(1)
VIT+(IN)
VIT-(IN)
VI(HYS)
IIH
Rising input switching threshold
Falling input switching threshold
Input threshold voltage hysteresis
High-level input current
0.7 x VCCI
V
V
0.3 x VCCI
0.1 x VCCI
V
VIH = VCCI (1) at INx
VIL = 0 V at INx
10
µA
µA
IIL
Low-level input current
-10
50
VI = VCC or 0 V, VCM = 1200
V; see Common-Mode Transient
Immunity Test Circuit
CMTI
Ci
Common mode transient immunity
Input Capacitance(2)
75
kV/us
pF
VI = VCC/ 2 + 0.4×sin(2πft), f = 2
MHz, VCC = 1.8 V
2.8
(1) VCCI = Input-side VCC; VCCO = Output-side VCC
(2) Measured from input pin to same side ground.
6.14 Supply Current Characteristics—1.8-V Supply
VCC1 = VCC2 = 1.8 V ±10% (over recommended operating conditions unless otherwise noted).
SUPPLY
CURRENT
PARAMETER
ISO6760L
TEST CONDITIONS
MIN
TYP
MAX UNIT
ICC1
4.27
3.15
4.28
3.3
6.24
5.39
6.25
5.55
Output A: GND for ISO6760L and Vcc for ISO6760LN
Output B: Vcc for ISO6760L and GND for ISO6760LN
Supply current - DC signal
Supply current - AC signal
ICC2
ICC1
ICC2
ICC1
ICC2
ICC1
1 Mbps
mA
4.37
4.6
6.37
All channels switching with square
wave clock input; CL = 15 pF
10 Mbps
7.04
6.5
50 Mbps
4.5
(25Mbps)
ICC2
6.84
9.47
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6.15 Switching Characteristics—5-V Supply
VCC1 = VCC2 = 5 V ±10% (over recommended operating conditions unless otherwise noted)
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX UNIT
ISO6760L
tPLH, tPHL
Propagation delay time
Pulse width distortion(1) |tPHL – tPLH
One input in static state and other input
is toggled at 100kbps. See Switching
Characteristics Test Circuit and Voltage
Waveforms
13
1
20.5
7
ns
ns
PWD
|
tsk(o)
tsk(pp)
tr
Channel-to-channel output skew time(2)
Part-to-part skew time(3)
Same-direction channels
6
6
ns
ns
ns
Output signal rise time
See Switching Characteristics Test
Circuit and Voltage Waveforms
2.6
2.6
4.5
tf
Output signal fall time
4.5
ns
us
Time from UVLO to
valid output data
Time from UVLO to valid output data
300
tPU
Measured from the time VCC goes
below 1.2V. See Default Output
Delay Time Test Circuit and Voltage
Waveforms
tDO
Default output delay time from input power loss
Time interval error
0.1
1
0.3
us
ns
tie
216 – 1 PRBS data at 50 Mbps
(1) Also known as pulse skew.
(2) tsk(o) is the skew between outputs of a single device with all driving inputs connected together and the outputs switching in the same
direction while driving identical loads.
(3) tsk(pp) is the magnitude of the difference in propagation delay times between any terminals of different devices switching in the same
direction while operating at identical supply voltages, temperature, input signals and loads.
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6.16 Switching Characteristics—3.3-V Supply
VCC1 = VCC2 = 3.3 V ±10% (over recommended operating conditions unless otherwise noted)
PARAMETER
TEST CONDITIONS
MIN
TYP
ISO6760L
tPLH, tPHL
Propagation delay time
Pulse width distortion(1) |tPHL – tPLH
One input in static state and other input
is toggled at 100kbps. See Switching
Characteristics Test Circuit and Voltage
Waveforms
13
1
21
7
ns
ns
PWD
|
tsk(o)
tsk(pp)
tr
Channel-to-channel output skew time(2)
Part-to-part skew time(3)
Same-direction channels
6
7
ns
ns
ns
Output signal rise time
See Switching Characteristics Test
Circuit and Voltage Waveforms
1.6
1.6
2.8
tf
Output signal fall time
2.8
ns
us
Time from UVLO to
valid output data
Time from UVLO to valid output data
300
tPU
Measured from the time VCC goes
below 1.2V. See Default Output
Delay Time Test Circuit and Voltage
Waveforms
tDO
Default output delay time from input power loss
Time interval error
0.1
1
0.3
us
ns
tie
216 – 1 PRBS data at 50 Mbps
(1) Also known as pulse skew.
(2) tsk(o) is the skew between outputs of a single device with all driving inputs connected together and the outputs switching in the same
direction while driving identical loads.
(3) tsk(pp) is the magnitude of the difference in propagation delay times between any terminals of different devices switching in the same
direction while operating at identical supply voltages, temperature, input signals and loads.
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6.17 Switching Characteristics—2.5-V Supply
VCC1 = VCC2 = 2.5 V ±10% (over recommended operating conditions unless otherwise noted)
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX UNIT
ISO6760L
tPLH, tPHL
Propagation delay time
Pulse width distortion(1) |tPHL – tPLH
One input in static state and other input
is toggled at 100kbps. See Switching
Characteristics Test Circuit and Voltage
Waveforms
14.5
1
23.5
7.1
ns
ns
PWD
|
tsk(o)
tsk(pp)
tr
Channel-to-channel output skew time(2)
Part-to-part skew time(3)
Same-direction channels
6
7.9
4
ns
ns
ns
Output signal rise time
See Switching Characteristics Test
Circuit and Voltage Waveforms
2
2
tf
Output signal fall time
4
ns
us
Time from UVLO to
valid output data
Time from UVLO to valid output data
300
tPU
Measured from the time VCC goes
below 1.2V. See Default Output
Delay Time Test Circuit and Voltage
Waveforms
tDO
Default output delay time from input power loss
Time interval error
0.1
1
0.3
us
ns
tie
216 – 1 PRBS data at 50 Mbps
(1) Also known as pulse skew.
(2) tsk(o) is the skew between outputs of a single device with all driving inputs connected together and the outputs switching in the same
direction while driving identical loads.
(3) tsk(pp) is the magnitude of the difference in propagation delay times between any terminals of different devices switching in the same
direction while operating at identical supply voltages, temperature, input signals and loads.
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6.18 Switching Characteristics—1.8-V Supply
VCC1 = VCC2 = 1.8 V ±5% (over recommended operating conditions unless otherwise noted)
PARAMETER
TEST CONDITIONS
MIN
TYP
ISO6760L
tPLH, tPHL
Propagation delay time
Pulse width distortion |tPHL – tPLH
One input in static state and other input
is toggled at 100kbps. See Switching
Characteristics Test Circuit and Voltage
Waveforms
18
1
31
ns
ns
PWD
|
8.2
tsk(o)
tsk(pp)
tr
Channel-to-channel output skew time(1)
Part-to-part skew time(2)
Same-direction channels
6
11.7
5.3
ns
ns
ns
Output signal rise time
See Switching Characteristics Test
Circuit and Voltage Waveforms
2.7
2.7
tf
Output signal fall time
5.3
ns
us
Time from UVLO to
valid output data
Time from UVLO to valid output data
300
tPU
Measured from the time VCC goes
below 1.2V. See Default Output
Delay Time Test Circuit and Voltage
Waveforms
tDO
Default output delay time from input power loss
Time interval error
0.1
1
0.3
us
ns
tie
216 – 1 PRBS data at 50 Mbps
(1) tsk(o) is the skew between outputs of a single device with all driving inputs connected together and the outputs switching in the same
direction while driving identical loads.
(2) tsk(pp) is the magnitude of the difference in propagation delay times between any terminals of different devices switching in the same
direction while operating at identical supply voltages, temperature, input signals and loads.
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6.19 Insulation Characteristics Curves
1000
2000
1800
1600
1400
1200
1000
800
Vcc = 5.5V
Vcc = 3.6V
Vcc = 2.75V
Vcc = 1.89V
800
600
400
200
0
600
400
200
0
0
20
40
60
80
100
120
140
160
0
20
40
60
80
100
120
140
160
Ambient Temperature (ꢀC)
Ambient Temperature (ꢀC)
Figure 6-1. Thermal Derating Curve for Safety
Limiting Current for DW-16 Package
Figure 6-2. Thermal Derating Curve for Safety
Limiting Power for DW-16 Package
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6.20 Typical Characteristics
18
9.5
9
ICC1 at 1.8 V
ICC1 at 1.8 V
ICC2 at 1.8 V
ICC1 at 2.5 V
ICC2 at 2.5 V
ICC1 at 3.3 V
ICC2 at 3.3 V
ICC1 at 5 V
ICC2 at 1.8 V
ICC1 at 2.5 V
ICC2 at 2.5 V
ICC1 at 3.3 V
ICC2 at 3.3 V
ICC1 at 5 V
16
14
12
10
8
8.5
8
7.5
7
6.5
6
ICC2 at 5 V
ICC2 at 5 V
5.5
5
6
4.5
4
4
3.5
3
2
0
5
10
15
20
25
30
35
40
45
50
0
5
10
15
20
25
30
35
40
45
50
Data Rate (Mbps)
Data Rate (Mbps)
TA = 25°C
CL = No Load
TA = 25°C
CL = 15 pF
Figure 6-4. ISO6763 Supply Current vs Data Rate
(With No Load)
Figure 6-3. ISO6760L Supply Current vs Data Rate
(With 15-pF Load)
8
0.8
VCC1 at 1.8 V
VCC1 at 1.8 V
VCC2 at 2.5 V
VCC1 at 3.3 V
VCC2 at 5 V
VCC2 at 2.5 V
VCC1 at 3.3 V
VCC2 at 5 V
7
6
5
4
3
2
1
0
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
-15
-10
-5
0
0
5
10
15
High-Level Output Current (mA)
Low-Level Output Current (mA)
TA = 25°C
TA = 25°C
Figure 6-5. High-Level Output Voltage vs High-level Figure 6-6. Low-Level Output Voltage vs Low-Level
Output Current Output Current
1.65
22
20
18
16
14
12
10
8
1.6
1.55
1.5
1.45
1.4
1.35
1.3
VCC1 +
VCC1 -
VCC2 +
VCC2 -
1.25
1.2
-55
-5
45
95
125
tPHL at 1.8 V
tPLH at 1.8 V
tPHL at 2.5 V
tPLH at 2.5 V
tPHL at 3.3 V
tPLH at 3.3 V
tPHL at 5 V
tPLH at 5 V
Free-Air Temperature (ꢀC)
TA = 25°C
6
Figure 6-8. Power Supply Undervoltage Threshold
vs Free-Air Temperature
-40 -25 -10
5
20 35 50 65 80 95 110 125
Temperature (C)
Figure 6-7. Propagation Delay Time vs Free-Air
Temperature
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7 Parameter Measurement Information
V
CCI
V
50%
I
50%
IN
OUT
0 V
V
t
t
PHL
PLH
Input
Generator
(See Note A)
C
L
V
I
V
50 ꢀ
O
See Note B
OH
90%
10%
50%
50%
V
O
V
OL
t
r
t
f
Copyright © 2016, Texas Instruments Incorporated
A. The input pulse is supplied by a generator having the following characteristics: PRR ≤ 50 kHz, 50% duty cycle, tr ≤ 3 ns, tf ≤ 3ns, ZO
50 Ω. At the input, 50 Ω resistor is required to terminate Input Generator signal. It is not needed in actual application.
B. CL = 15 pF and includes instrumentation and fixture capacitance within ±20%.
=
Figure 7-1. Switching Characteristics Test Circuit and Voltage Waveforms
V
I
See Note B
V
CC
V
CC
V
1.4 V
I
0 V
default high
IN
OUT
IN = 0 V (Devices without suffix F)
IN = V (Devices with suffix F)
V
O
t
DO
CC
V
OH
C
L
50%
V
O
See Note A
V
OL
default low
A. CL = 15 pF and includes instrumentation and fixture capacitance within ±20%.
B. Power Supply Ramp Rate = 10 mV/ns
Figure 7-2. Default Output Delay Time Test Circuit and Voltage Waveforms
V
V
CCO
CCI
Pass-fail criteria:
The output must
remain stable.
IN
OUT
S1
+
C
L
V
or V
OL
OH
See Note A
œ
GNDO
GNDI
+
œ
V
CM
A. CL = 15 pF and includes instrumentation and fixture capacitance within ±20%.
B. For optimized CMTI performance, a 0.1 μF + 1 μF decoupling capacitor should be placed close to VCC1 and VCC2. Please see Section
12.2 for capacitor placement details. A recommended 0.1μF capacitor is LLL185R71A104MA11L (CAP CER 0.1UF 10V X7R 0306 - LW
Reversed Low ESL Chip Ceramic Capacitors) or equivalent.
Figure 7-3. Common-Mode Transient Immunity Test Circuit
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8 Detailed Description
8.1 Overview
The ISO6760L family of devices have an ON-OFF keying (OOK) modulation scheme to transmit the digital data
across a silicon dioxide based isolation barrier. The transmitter sends a high frequency carrier across the barrier
to represent one digital state and sends no signal to represent the other digital state. The receiver demodulates
the signal after advanced signal conditioning and produces the output which goes through an interlock stage
before an output buffer. The ISO6760L family offers two options, a standard non-inverting channel, ISO6760L,
and a channel inverting ISO6760LN. The two offerings make the ISO6760L family compatable with historical
optocoupler based solutions. The ISO6760L devices also incorporate advanced circuit techniques to maximize
the CMTI performance and minimize the radiated emissions due to the high frequency carrier and IO buffer
switching. The conceptual block diagram of a digital capacitive isolator, Figure 8-1, shows a functional block
diagram of a typical channel.
8.2 Functional Block Diagram
Transmitter
Receiver
EN
OOK
Modulation
TX IN
SiO based
2
RX OUT
TX Signal
Conditioning
RX Signal
Conditioning
Envelope
Detection
Capacitive
Isolation
Barrier
Emissions
Reduction
Techniques
Oscillator
Copyright © 2016, Texas Instruments Incorporated
Figure 8-1. Conceptual Block Diagram of a Digital Capacitive Isolator
Figure 8-2 shows a conceptual detail of how the ON-OFF keying scheme works.
TX IN
Carrier signal through
isolation barrier
RX OUT
Figure 8-2. On-Off Keying (OOK) Based Modulation Scheme
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8.3 Feature Description
Table 8-1 provides an overview of the device features.
Table 8-1. Device Features
MAXIMUM DATA
RATE
PART NUMBER
ISO6760L
CHANNEL DIRECTION
OUTPUT
Non-Inverted
Inverted
PACKAGE
DW-16
RATED ISOLATION(1)
5000 VRMS / 7000 VPK
5000 VRMS / 7000 VPK
6 Forward,
3 Interlock Pairs
50 Mbps
50 Mbps
6 Forward,
3 Interlock Pairs
ISO6760LN
DW-16
(1) See for detailed isolation ratings.
8.3.1 Electromagnetic Compatibility (EMC) Considerations
Many applications in harsh industrial environment are sensitive to disturbances such as electrostatic discharge
(ESD), electrical fast transient (EFT), surge and electromagnetic emissions. These electromagnetic disturbances
are regulated by international standards such as IEC 61000-4-x and CISPR 32. Although system-level
performance and reliability depends, to a large extent, on the application board design and layout, the ISO676x
family of devices incorporates many chip-level design improvements for overall system robustness. Some of
these improvements include:
•
•
•
•
Robust ESD protection cells for input and output signal pins and inter-chip bond pads.
Low-resistance connectivity of ESD cells to supply and ground pins.
Enhanced performance of high voltage isolation capacitor for better tolerance of ESD, EFT and surge events.
Bigger on-chip decoupling capacitors to bypass undesirable high energy signals through a low impedance
path.
•
•
PMOS and NMOS devices isolated from each other by using guard rings to avoid triggering of parasitic
SCRs.
Reduced common mode currents across the isolation barrier by ensuring purely differential internal operation.
8.3.2 Interlock Capability
The ISO6760L family incorporates a series of logic gates to protect adjacent channel pairings from both
registering high simultaneously. When paired with an IPM, this interlock circuitry provides protection proventing
shoot through current to both the high-side and low-side switch of the module. This design, shown in ISO6760L
Channel Pairing Block Diagram of Interlock, is used to make sure that when one of the channel pairings is logic
high, the other channel will output logic low. ISO6760L Device Truth Table provides the logic output state to the
corresponding input state for ISO6760L and ISO6760LN (Inverted) Device Truth Table provides the logic output
state to the corresponding input state for ISO6760LN (inverted output version).
I
N
T
INx_H
OUTx_H
E
R
L
O
C
K
INx_L
OUTx_L
Figure 8-3. ISO6760L Channel Pairing Block Diagram of Interlock
ISO6760L Device Truth Table
INx_H
INx_L
OUTx_H
OUTx_L
High
Low
Low
High
High
Low
Low
Low
Low
Low
High
Low
Low
Low
High
High
Low
Low
Floating
Floating
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Table 8-2. ISO6760LN (Inverted) Device Truth Table
INx_H
INx_L
OUTx_H
OUTx_L
High
Low
Low
High
Low
High
Low
Low
Low
High
Low
Low
Low
Low
High
High
Low
Low
Floating
Floating
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8.4 Device Functional Modes
Table 8-3 lists the functional modes for the ISO6760L devices.
Table 8-3. Function Table
INPUT
OUTPUT
(OUTx_H and
OUTx_L)
(1)
VCCI
VCCO
(INx_H and
COMMENTS
INx_L) (3)
H
L
Normal Operation: A channel output assumes the logic state of its input
noted in ISO6760L Device Truth Table and ISO6760LN (Inverted) Device Truth
Table .
PU
PU
Normal
Open
Output Low: When VCCI is unpowered and VCCO is powered up, the output
interlock circuit will set the output to logic low.
When VCCI transitions from unpowered to powered-up, a channel output
assumes the logic state in ISO6760L Device Truth Table and ISO6760LN
(Inverted) Device Truth Table .
PD
PU
PD
X
X
Low
When VCCI transitions from powered-up to unpowered, channel output will be
the output low state.
When VCCO is unpowered, a channel output is undetermined(2)
.
When VCCO transitions from unpowered to powered-up, a channel output
assumes the logic state of its input noted in ISO6760L Device Truth Table
and ISO6760LN (Inverted) Device Truth Table .
X
Undetermined
(1) VCCI = Input-side VCC; VCCO = Output-side VCC; PU = Powered up (VCC ≥ 1.71 V); PD = Powered down (VCC ≤ 1.05 V); X = Irrelevant;
H = High level; L = Low level ; Z = High Impedance
(2) The outputs are in undetermined state when 1.7 V < VCCI, VCCO < 2.25 V and 1.05 V < VCCI, VCCO < 1.71 V
(3) A strongly driven input signal can weakly power the floating VCC through an internal protection diode and cause undetermined output
8.4.1 Device I/O Schematics
Input (Devices with F suffix)
Input (Devices without F suffix)
V
V
CCI
V
CCI
V
CCI
CCI
V
CCI
V
V
CCI
CCI
1.5 Mꢀ
985 ꢀ
985 ꢀ
INx
INx
1.5 Mꢀ
Output
V
CCO
~20 ꢀ
OUTx
Figure 8-4. Device I/O Schematics
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9 Application and Implementation
Note
Information in the following applications sections is not part of the TI component specification, and
TI does not warrant its accuracy or completeness. TI’s customers are responsible for determining
suitability of components for their purposes. Customers should validate and test their design
implementation to confirm system functionality.
9.1 Application Information
The ISO6760L devices are high-performance, six-channel digital isolators. The ISO6760L devices use single-
ended CMOS-logic switching technology with built in hardware interlock logic. The supply voltage range is from
1.71 V to 5.5 V for both supplies, VCC1 and VCC2. Since an isolation barrier separates the two sides, each side
can be sourced independently with any voltage within recommended operating conditions. As an example, it
is possible to supply ISO6760L VCC1 with 3.3 V (which is within 1.71 V to 5.5 V) and VCC2 with 5V (which is
also within 1.71 V to 5.5 V). You can use the digital isolator as a logic-level translator in addition to providing
isolation. When designing with digital isolators, keep in mind that because of the single-ended design structure,
digital isolators do not conform to any specific interface standard and are only intended for isolating single-ended
CMOS or TTL digital signal lines. The isolator is typically placed between the data controller (that is, MCU or
FPGA), and a data converter or a line transceiver, regardless of the interface type or standard.
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9.2 Typical Application
Figure 9-1 shows the isolated connections between a processor and Intelligent Power Module (IPM) interface
implementation.
5.0V
DC-DC
24V
10 μF
Vcc
D2
D1
IN
OUT
10 μF
15V_ISO
LDO
GND
SN6505
10 μF
EN
GND
5V_ISO
OUT
IN
5.0V
1 µF
LDO
GND
EN
HV DC+
15V_ISO
0.1 μF
0.1 μF
IPM with SIGNAL LEVEL-SHIFT and
BOOTSTRAP for GATE DRIVER BIAS SUPPLY
0.1 μF
16
1
High side
gate driver
VCC2
VCC1
Signal
Level shift
UHIN
2
4
VDDIO
INA_H
INB_H
OUTA_H
OUTB_H
+
Bias
Supply
Bootstrap
High side
gate driver
UH
VH
15
13
VHIN
High side
gate driver
U
WHIN
6
3
INC_H
INA_L
WH
UL
OUTC_H
OUTA_L
V
3 phase
IGBT
inverter
11
M
CONTROLLER
ISO6760L
14
12
ULIN
VLIN
WLIN
W
5
7
VL
OUTB_L
OUTC_L
INB_L
INC_L
Low side
gate driver
WL
10
VSS
GND1
8
GND2
9
HV DC-
HV DC-
Figure 9-1. Isolation for Intelligent Power Module (IPM) Interface
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9.2.1 Design Requirements
To design with these devices, use the parameters listed in Table 9-1.
Table 9-1. Design Parameters
PARAMETER
VALUE
Supply voltage, VCC1 and VCC2
1.71 V to 1.89 V and 2.25 V to 5.5 V
Decoupling capacitor between VCC1 and GND1
Decoupling capacitor from VCC2 and GND2
0.1 µF
0.1 µF
9.2.2 Detailed Design Procedure
Unlike optocouplers, which require external components to improve performance, provide bias, or limit current,
the ISO6760L family of devices only require two external bypass capacitors to operate.
VCC1
1
2
3
4
5
6
7
8
16
15
14
13
12
11
10
9
VCC2
I
N
T
E
R
L
O
C
K
INA_H
INA_L
INB_H
OUTA_H
OUTB_H
I
N
T
E
R
L
O
C
K
OUTC_H
OUTA_L
INB_L
INC_H
INC_L
I
N
T
E
R
L
O
C
K
OUTB_L
OUTC_L
GND1
GND2
Figure 9-2. Typical ISO6760L Circuit Hook-up
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9.2.3 Application Curve
The following diagrams of the ISO6760L family of devices show how the hardware interlock circuitry protects
against shoot through current. Within a channel pairing, both outputs cannot be high simultaneously. ISO6760L
Interlock Diagram shows the ISO6760L demonstrating the hardware interlock on a 200 Hz input signal out of
phase between two adjacent channels. ISO6760L Interlock Diagram shows the the normal ISO6760 (device
offered without interlock circuitry) with a 200 Hz input signal out of phase between two adjacent channels for
comparison.
Figure 9-4. ISO6760 (Device without Interlock)
Diagram
Figure 9-3. ISO6760L Interlock Diagram
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10 Insulation Lifetime
Insulation lifetime projection data is collected by using industry-standard Time Dependent Dielectric Breakdown
(TDDB) test method. In this test, all pins on each side of the barrier are tied together creating a two-terminal
device and high voltage applied between the two sides; See Figure 10-1 for TDDB test setup. The insulation
breakdown data is collected at various high voltages switching at 60 Hz over temperature. For reinforced
insulation, VDE standard requires the use of TDDB projection line with failure rate of less than 1 part per million
(ppm). Even though the expected minimum insulation lifetime is 20 years at the specified working isolation
voltage, VDE reinforced certification requires additional safety margin of 20% for working voltage and 87.5% for
lifetime which translates into minimum required insulation lifetime of 37.5 years at a working voltage that's 20%
higher than the specified value.
Figure 10-2 shows the intrinsic capability of the isolation barrier to withstand high voltage stress over its lifetime.
Based on the TDDB data, the intrinsic capability of the insulation is 1500 VRMS with a lifetime of 220 years. Other
factors, such as package size, pollution degree, material group, etc. can further limit the working voltage of the
component. The working voltage of DW-16 package is specified upto 1500 VRMS. At the lower working voltages,
the corresponding insulation lifetime is much longer than 220 years.
A
Vcc 1
Vcc 2
Time Counter
> 1 mA
DUT
GND 1
GND 2
V
S
Oven at 150 °C
Figure 10-1. Test Setup for Insulation Lifetime Measurement
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Figure 10-2. Insulation Lifetime Projection Data
11 Power Supply Recommendations
To help ensure reliable operation at data rates and supply voltages, a 0.1-μF bypass capacitor is recommended
at the input and output supply pins (VCC1 and VCC2). The capacitors should be placed as close to the supply
pins as possible. If only a single primary-side power supply is available in an application, isolated power
can be generated for the secondary-side with the help of a transformer driver. For industrial applications,
please use Texas Instruments' SN6501 or SN6505B. For such applications, detailed power supply design and
transformer selection recommendations are available in SN6501 Transformer Driver for Isolated Power Supplies
or SN6505B-Q1 Low-noise, 1-A Transformer Drivers for Isolated Power Supplies.
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12 Layout
12.1 Layout Guidelines
A minimum of two layers is required to accomplish a low EMI PCB design. To further improve EMI, a four layer
board can be used (see Figure 12-2). Layer stacking for a four layer board should be in the following order
(top-to-bottom): high-speed signal layer, ground plane, power plane and low-frequency signal layer.
•
Routing the high-speed traces on the top layer avoids the use of vias (and the introduction of their
inductances) and allows for clean interconnects between the isolator and the transmitter and receiver circuits
of the data link.
•
•
•
Placing a solid ground plane next to the high-speed signal layer establishes controlled impedance for
transmission line interconnects and provides an excellent low-inductance path for the return current flow.
Placing the power plane next to the ground plane creates additional high-frequency bypass capacitance of
approximately 100 pF/inch2.
Routing the slower speed control signals on the bottom layer allows for greater flexibility as these signal links
usually have margin to tolerate discontinuities such as vias.
If an additional supply voltage plane or signal layer is needed, add a second power or ground plane system
to the stack to keep it symmetrical. This makes the stack mechanically stable and prevents it from warping.
Also the power and ground plane of each power system can be placed closer together, thus increasing the
high-frequency bypass capacitance significantly.
For detailed layout recommendations, refer to the Digital Isolator Design Guide.
12.1.1 PCB Material
For digital circuit boards operating below 150 Mbps, (or rise and fall times higher than 1 ns), and trace lengths
of up to 10 inches, use standard FR-4 UL94V-0 printed circuit boards. This PCB is preferred over cheaper
alternatives due to its lower dielectric losses at high frequencies, less moisture absorption, greater strength and
stiffness, and self-extinguishing flammability-characteristics.
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12.2 Layout Example
Solid supply islands reduce
inductance because large peak
currents flow into the VCC pin
0.5 mm
maximum
from VCC1
0.5 mm
maximum
from VCC2
VCC1
VCC2
1
16
0.1 …F
0.1 …F
2
3
15
14
I/O pins
routed
4
13
through
alternate
layer with
vias
5
6
12
11
7
8
10
9
GND2
GND1
Solid ground islands help
dissipate heat through PCB
Figure 12-1. Layout Example
High-speed traces
10 mils
Ground plane
Keep this
space free
from planes,
traces, pads,
and vias
FR-4
40 mils
10 mils
0 ~ 4.5
r
Power plane
Low-speed traces
Figure 12-2. Four Layer Board Layout Example
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13 Device and Documentation Support
13.1 Documentation Support
13.1.1 Related Documentation
For related documentation, see the following:
•
•
•
•
Texas Instruments, Digital Isolator Design Guide
Texas Instruments, Digital Isolator Design Guide
Texas Instruments, Isolation Glossary
Texas Instruments, How to use isolation to improve ESD, EFT, and Surge immunity in industrial systems
application report
•
Texas Instruments, ADS79xx 12/10/8-Bit, 1 MSPS, 16/12/8/4-Channel, Single-Ended, MicroPower, Serial
Interface ADCs data sheet
•
•
•
•
Texas Instruments, DAC161P997 Single-Wire 16-bit DAC for 4- to 20-mA Loops data sheet
Texas Instruments, MSP430G2132Mixed Signal Microcontroller data sheet
Texas Instruments, SN6501 Transformer Driver for Isolated Power Supplies data sheet
Texas Instruments, TPS76333Low-Power 150-mA Low-Dropout Linear Regulators data sheet
13.2 Receiving Notification of Documentation Updates
To receive notification of documentation updates, navigate to the device product folder on ti.com. In the upper
right corner, click on Alert me to register and receive a weekly digest of any product information that has
changed. For change details, review the revision history included in any revised document.
13.3 Support Resources
TI E2E™ support forums are an engineer's go-to source for fast, verified answers and design help — straight
from the experts. Search existing answers or ask your own question to get the quick design help you need.
Linked content is provided "AS IS" by the respective contributors. They do not constitute TI specifications and do
not necessarily reflect TI's views; see TI's Terms of Use.
13.4 Trademarks
TI E2E™ is a trademark of Texas Instruments.
All trademarks are the property of their respective owners.
13.5 Electrostatic Discharge Caution
This integrated circuit can be damaged by ESD. Texas Instruments recommends that all integrated circuits be handled
with appropriate precautions. Failure to observe proper handling and installation procedures can cause damage.
ESD damage can range from subtle performance degradation to complete device failure. Precision integrated circuits may
be more susceptible to damage because very small parametric changes could cause the device not to meet its published
specifications.
13.6 Glossary
TI Glossary
This glossary lists and explains terms, acronyms, and definitions.
14 Mechanical, Packaging, and Orderable Information
The following pages include mechanical packaging and orderable information. This information is the most
current data available for the designated devices. This data is subject to change without notice and revision of
this document. For browser-based versions of this data sheet, refer to the left-hand navigation.
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PACKAGE OUTLINE
DW0016A
SOIC - 2.65 mm max height
S
C
A
L
E
1
.
5
0
0
SOIC
C
10.63
9.97
SEATING PLANE
TYP
PIN 1 ID
AREA
0.1 C
A
14X 1.27
16
1
2X
10.5
10.1
NOTE 3
8.89
8
9
0.51
0.31
16X
7.6
7.4
B
2.65 MAX
0.25
C A B
NOTE 4
0.33
0.10
TYP
SEE DETAIL A
0.25
GAGE PLANE
0.3
0.1
0 - 8
1.27
0.40
DETAIL A
TYPICAL
(1.4)
4220721/A 07/2016
NOTES:
1. All linear dimensions are in millimeters. Dimensions in parenthesis are for reference only. Dimensioning and tolerancing
per ASME Y14.5M.
2. This drawing is subject to change without notice.
3. This dimension does not include mold flash, protrusions, or gate burrs. Mold flash, protrusions, or gate burrs shall not
exceed 0.15 mm, per side.
4. This dimension does not include interlead flash. Interlead flash shall not exceed 0.25 mm, per side.
5. Reference JEDEC registration MS-013.
www.ti.com
EXAMPLE BOARD LAYOUT
DW0016A
SOIC - 2.65 mm max height
SOIC
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16X (2)
SEE
DETAILS
SYMM
ISO6760L
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EXAMPLE STENCIL DESIGN
DW0016A
SOIC - 2.65 mm max height
SOIC
16X (2)
SYMM
1
16
16X (0.6)
SYMM
14X (1.27)
8
9
R0.05 TYP
(9.3)
SOLDER PASTE EXAMPLE
BASED ON 0.125 mm THICK STENCIL
SCALE:7X
4220721/A 07/2016
NOTES: (continued)
8. Laser cutting apertures with trapezoidal walls and rounded corners may offer better paste release. IPC-7525 may have alternate
design recommendations.
9. Board assembly site may have different recommendations for stencil design.
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14.1 Package Option Addendum
Packaging Information
Orderable
Device
Status(1)
Package Type Package
Drawing
Pins
16
Package Qty
2000
Eco Plan(2)
Lead/Ball
Finish(6)
MSL Peak
Temp(3)
Op Temp (°C) Device
Marking(4) (5)
ISO6763DWR ACTIVE
SOIC
DW
Green (RoHS & NIPDAU
no Sb/Br)
Level-2-260C-1 --40 to 125
YEAR
ISO6763
ISO6763FDWR
Green (RoHS & NIPDAU
no Sb/Br)
Level-2-260C-1 --40 to 125
YEAR
ISO6763F
ACTIVE
SOIC
DW
16
2000
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14.2 Tape and Reel Information
REEL DIMENSIONS
TAPE DIMENSIONS
K0
P1
W
B0
Reel
Diameter
Cavity
A0
A0 Dimension designed to accommodate the component width
B0 Dimension designed to accommodate the component length
K0 Dimension designed to accommodate the component thickness
Overall width of the carrier tape
P1 Pitch between successive cavity centers
W
Reel Width (W1)
QUADRANT ASSIGNMENTS FOR PIN 1 ORIENTATION IN TAPE
Sprocket Holes
Q1 Q2
Q3 Q4
Q1 Q2
Q3 Q4
User Direction of Feed
Pocket Quadrants
Reel
Diameter
(mm)
Reel
Width W1
(mm)
Package
Type
Package
Drawing
A0
(mm)
B0
(mm)
K0
(mm)
P1
(mm)
W
(mm)
Pin1
Quadrant
Device
Pins
SPQ
ISO6763DWR
ISO6763FDWR
SOIC
SOIC
DW
DW
16
16
2000
2000
330.0
330.0
24.4
24.4
10.9
10.9
10.7
10.7
2.7
2.7
12.0
12.0
24.0
24.0
Q1
Q1
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TAPE AND REEL BOX DIMENSIONS
Width (mm)
H
W
L
Device
Package Type
SOIC
Package Drawing Pins
SPQ
2000
2000
Length (mm) Width (mm)
Height (mm)
45.0
ISO6763DWR
ISO6763FDWR
DW
DW
16
16
367.0
367.0
367.0
367.0
SOIC
45.0
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PACKAGE OPTION ADDENDUM
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17-Dec-2021
PACKAGING INFORMATION
Orderable Device
Status Package Type Package Pins Package
Eco Plan
Lead finish/
Ball material
MSL Peak Temp
Op Temp (°C)
Device Marking
Samples
Drawing
Qty
(1)
(2)
(3)
(4/5)
(6)
ISO6760LDWR
ACTIVE
ACTIVE
SOIC
SOIC
DW
DW
16
16
2000 RoHS & Green
2000 RoHS & Green
NIPDAU
Level-2-260C-1 YEAR
Level-2-260C-1 YEAR
-40 to 125
-40 to 125
ISO6760L
ISO6760LN
ISO6760LNDWR
NIPDAU
(1) The marketing status values are defined as follows:
ACTIVE: Product device recommended for new designs.
LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect.
NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design.
PREVIEW: Device has been announced but is not in production. Samples may or may not be available.
OBSOLETE: TI has discontinued the production of the device.
(2) RoHS: TI defines "RoHS" to mean semiconductor products that are compliant with the current EU RoHS requirements for all 10 RoHS substances, including the requirement that RoHS substance
do not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, "RoHS" products are suitable for use in specified lead-free processes. TI may
reference these types of products as "Pb-Free".
RoHS Exempt: TI defines "RoHS Exempt" to mean products that contain lead but are compliant with EU RoHS pursuant to a specific EU RoHS exemption.
Green: TI defines "Green" to mean the content of Chlorine (Cl) and Bromine (Br) based flame retardants meet JS709B low halogen requirements of <=1000ppm threshold. Antimony trioxide based
flame retardants must also meet the <=1000ppm threshold requirement.
(3) MSL, Peak Temp. - The Moisture Sensitivity Level rating according to the JEDEC industry standard classifications, and peak solder temperature.
(4) There may be additional marking, which relates to the logo, the lot trace code information, or the environmental category on the device.
(5) Multiple Device Markings will be inside parentheses. Only one Device Marking contained in parentheses and separated by a "~" will appear on a device. If a line is indented then it is a continuation
of the previous line and the two combined represent the entire Device Marking for that device.
(6)
Lead finish/Ball material - Orderable Devices may have multiple material finish options. Finish options are separated by a vertical ruled line. Lead finish/Ball material values may wrap to two
lines if the finish value exceeds the maximum column width.
Important Information and Disclaimer:The information provided on this page represents TI's knowledge and belief as of the date that it is provided. TI bases its knowledge and belief on information
provided by third parties, and makes no representation or warranty as to the accuracy of such information. Efforts are underway to better integrate information from third parties. TI has taken and
continues to take reasonable steps to provide representative and accurate information but may not have conducted destructive testing or chemical analysis on incoming materials and chemicals.
TI and TI suppliers consider certain information to be proprietary, and thus CAS numbers and other limited information may not be available for release.
In no event shall TI's liability arising out of such information exceed the total purchase price of the TI part(s) at issue in this document sold by TI to Customer on an annual basis.
Addendum-Page 1
PACKAGE OPTION ADDENDUM
www.ti.com
17-Dec-2021
Addendum-Page 2
GENERIC PACKAGE VIEW
DW 16
7.5 x 10.3, 1.27 mm pitch
SOIC - 2.65 mm max height
SMALL OUTLINE INTEGRATED CIRCUIT
This image is a representation of the package family, actual package may vary.
Refer to the product data sheet for package details.
4224780/A
www.ti.com
PACKAGE OUTLINE
DW0016A
SOIC - 2.65 mm max height
S
C
A
L
E
1
.
5
0
0
SOIC
C
10.63
9.97
SEATING PLANE
TYP
PIN 1 ID
AREA
0.1 C
A
14X 1.27
16
1
2X
10.5
10.1
NOTE 3
8.89
8
9
0.51
0.31
16X
7.6
7.4
B
2.65 MAX
0.25
C A B
NOTE 4
0.33
0.10
TYP
SEE DETAIL A
0.25
GAGE PLANE
0.3
0.1
0 - 8
1.27
0.40
DETAIL A
TYPICAL
(1.4)
4220721/A 07/2016
NOTES:
1. All linear dimensions are in millimeters. Dimensions in parenthesis are for reference only. Dimensioning and tolerancing
per ASME Y14.5M.
2. This drawing is subject to change without notice.
3. This dimension does not include mold flash, protrusions, or gate burrs. Mold flash, protrusions, or gate burrs shall not
exceed 0.15 mm, per side.
4. This dimension does not include interlead flash. Interlead flash shall not exceed 0.25 mm, per side.
5. Reference JEDEC registration MS-013.
www.ti.com
EXAMPLE BOARD LAYOUT
DW0016A
SOIC - 2.65 mm max height
SOIC
16X (2)
SEE
DETAILS
SYMM
1
16
16X (0.6)
SYMM
14X (1.27)
R0.05 TYP
9
8
(9.3)
LAND PATTERN EXAMPLE
SCALE:7X
SOLDER MASK
OPENING
SOLDER MASK
OPENING
METAL
METAL
0.07 MAX
ALL AROUND
0.07 MIN
ALL AROUND
SOLDER MASK
DEFINED
NON SOLDER MASK
DEFINED
SOLDER MASK DETAILS
4220721/A 07/2016
NOTES: (continued)
6. Publication IPC-7351 may have alternate designs.
7. Solder mask tolerances between and around signal pads can vary based on board fabrication site.
www.ti.com
EXAMPLE STENCIL DESIGN
DW0016A
SOIC - 2.65 mm max height
SOIC
16X (2)
SYMM
1
16
16X (0.6)
SYMM
14X (1.27)
R0.05 TYP
8
9
(9.3)
SOLDER PASTE EXAMPLE
BASED ON 0.125 mm THICK STENCIL
SCALE:7X
4220721/A 07/2016
NOTES: (continued)
8. Laser cutting apertures with trapezoidal walls and rounded corners may offer better paste release. IPC-7525 may have alternate
design recommendations.
9. Board assembly site may have different recommendations for stencil design.
www.ti.com
IMPORTANT NOTICE AND DISCLAIMER
TI PROVIDES TECHNICAL AND RELIABILITY DATA (INCLUDING DATA SHEETS), DESIGN RESOURCES (INCLUDING REFERENCE
DESIGNS), APPLICATION OR OTHER DESIGN ADVICE, WEB TOOLS, SAFETY INFORMATION, AND OTHER RESOURCES “AS IS”
AND WITH ALL FAULTS, AND DISCLAIMS ALL WARRANTIES, EXPRESS AND IMPLIED, INCLUDING WITHOUT LIMITATION ANY
IMPLIED WARRANTIES OF MERCHANTABILITY, FITNESS FOR A PARTICULAR PURPOSE OR NON-INFRINGEMENT OF THIRD
PARTY INTELLECTUAL PROPERTY RIGHTS.
These resources are intended for skilled developers designing with TI products. You are solely responsible for (1) selecting the appropriate
TI products for your application, (2) designing, validating and testing your application, and (3) ensuring your application meets applicable
standards, and any other safety, security, regulatory or other requirements.
These resources are subject to change without notice. TI grants you permission to use these resources only for development of an
application that uses the TI products described in the resource. Other reproduction and display of these resources is prohibited. No license
is granted to any other TI intellectual property right or to any third party intellectual property right. TI disclaims responsibility for, and you
will fully indemnify TI and its representatives against, any claims, damages, costs, losses, and liabilities arising out of your use of these
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TI’s products are provided subject to TI’s Terms of Sale or other applicable terms available either on ti.com or provided in conjunction with
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TI products.
TI objects to and rejects any additional or different terms you may have proposed. IMPORTANT NOTICE
Mailing Address: Texas Instruments, Post Office Box 655303, Dallas, Texas 75265
Copyright © 2021, Texas Instruments Incorporated
相关型号:
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