LM25085SDE [TI]

LM25085, LM25085-Q1 42V Constant On-Time PFET Buck Switching Controller; LM25085 , LM25085 -Q1 42V恒定导通时间PFET降压开关控制器
LM25085SDE
型号: LM25085SDE
厂家: TEXAS INSTRUMENTS    TEXAS INSTRUMENTS
描述:

LM25085, LM25085-Q1 42V Constant On-Time PFET Buck Switching Controller
LM25085 , LM25085 -Q1 42V恒定导通时间PFET降压开关控制器

开关 控制器
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LM25085, LM25085-Q1  
www.ti.com  
SNVS593H OCTOBER 2008REVISED MARCH 2013  
LM25085, LM25085-Q1 42V Constant On-Time PFET Buck Switching Controller  
Check for Samples: LM25085, LM25085-Q1  
1
FEATURES  
PACKAGE  
2
LM25085-Q1 is an Automotive Grade product  
that is AEC-Q100 Grade 1 Qualified (-40°C to  
125°C Operating Junction Temperature)  
HVSSOP-8  
VSSOP-8  
WSON-8 (3mm x 3mm)  
Wide 4.5V to 42V Input Voltage Range  
Adjustable Current Limit Using RDS(ON) or a  
Current Sense Resistor  
DESCRIPTION  
The LM25085 is a high efficiency PFET switching  
regulator controller that can be used to quickly and  
easily develop a small, efficient buck regulator for a  
wide range of applications. This high voltage  
controller contains a PFET gate driver and a high  
voltage bias regulator which operates over a wide  
4.5V to 42V input range. The constant on-time  
regulation principle requires no loop compensation,  
simplifies circuit implementation, and results in ultra-  
fast load transient response. The operating frequency  
remains nearly constant with line and load variations  
due to the inverse relationship between the input  
voltage and the on-time. The PFET architecture  
allows 100% duty cycle operation for a low dropout  
voltage. Either the RDS(ON) of the PFET or an external  
sense resistor can be used to sense current for over-  
current detection.  
Programmable Switching Frequency to 1MHz  
No Loop Compensation Required  
Ultra-Fast Transient Response  
Nearly Constant Operating Frequency with  
Line and Load Variations  
Adjustable Output Voltage from 1.25V  
Precision ±2% Feedback Reference  
Capable of 100% Duty Cycle Operation  
Internal Soft-Start Timer  
Integrated High Voltage Bias Regulator  
Thermal Shutdown  
Typical Application, Basic Step Down Controller  
4.5V to 42V  
C
VCC  
LM25085  
Input  
VIN  
V
IN  
VCC  
C
ADJ  
C
IN  
ADJ  
GND  
R
T
R
ADJ  
L1  
PGATE  
Q1  
RT  
SHUTDOWN  
V
OUT  
ISEN  
FB  
C
OUT  
GND  
D1  
Cff  
R
FB2  
GND  
R
FB1  
1
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of  
Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.  
All trademarks are the property of their respective owners.  
2
PRODUCTION DATA information is current as of publication date.  
Products conform to specifications per the terms of the Texas  
Instruments standard warranty. Production processing does not  
necessarily include testing of all parameters.  
Copyright © 2008–2013, Texas Instruments Incorporated  
LM25085, LM25085-Q1  
SNVS593H OCTOBER 2008REVISED MARCH 2013  
www.ti.com  
Connection Diagram  
VIN  
8
7
1
ADJ  
RT  
Exposed Pad on Bottom  
Connect to Ground  
2
VCC  
VIN  
1
8
7
6
5
ADJ  
RT  
FB  
3
4
6
5
PGATE  
ISEN  
VCC  
2
3
FB  
PGATE  
ISEN  
GND  
GND  
4
Exposed Pad on Bottom  
Connect to Ground  
Figure 1. Top View  
8-Lead HVSSOP-PowerPAD  
Figure 3. Top View  
8-Lead WSON  
See Package Number DGN0008A  
See Package Number NGQ0008A  
1
8
7
6
5
VIN  
ADJ  
RT  
VCC  
2
3
FB  
PGATE  
ISEN  
GND  
4
Figure 2. Top View  
8-Lead VSSOP  
See Package Number DGK0008A  
PIN DESCRIPTIONS  
Pin  
No.  
Name  
Description  
Application Information  
1
2
3
ADJ  
RT  
Current Limit Adjust  
The current limit threshold is set by an external resistor from VIN to ADJ in  
conjunction with the external sense resistor or the PFET’s RDS(ON)  
.
On-time control and shutdown  
An external resistor from VIN to RT sets the buck switch on-time and switching  
frequency. Grounding this pin shuts down the controller.  
FB  
Voltage Feedback from the  
regulated output  
Input to the regulation and over-voltage comparators. The regulation level is 1.25V.  
4
5
GND  
ISEN  
Circuit Ground  
Ground reference for all internal circuitry  
Current sense input for current  
limit detection.  
Connect to the PFET drain when using RDS(ON) current sense. Connect to the PFET  
source and the sense resistor when using a current sense resistor.  
6
7
PGATE Gate Driver Output  
Connect to the gate of the external PFET.  
VCC  
Output of the gate driver bias  
Output of the negative voltage regulator (relative to VIN) that biases the PFET gate  
driver. A low ESR capacitor is required from VIN to VCC, located as close as  
possible to the pins.  
regulator  
8
VIN  
EP  
Input supply voltage  
Exposed Pad  
The operating input range is from 4.5V to 42V. A low ESR bypass capacitor must be  
located as close as possible to the VIN and GND pins.  
Exposed pad on the underside of the package (HVSSOP-PowerPAD-8 and WSON  
only). This pad is to be soldered to the PC board ground plane to aid in heat  
dissipation.  
These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam  
during storage or handling to prevent electrostatic damage to the MOS gates.  
2
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SNVS593H OCTOBER 2008REVISED MARCH 2013  
(1)(2)  
Absolute Maximum Ratings  
VIN to GND  
-0.3V to 45V  
ISEN to GND  
-0.3V to VIN + 0.3V  
-0.3V to VIN + 0.3V  
-0.3V to 7V  
ADJ to GND  
RT, FB to GND  
VIN to VCC, VIN to PGATE  
-0.3V to 10V  
(3)  
ESD Rating  
Human Body Model  
2kV  
Storage Temperature Range  
-65°C to +150°C  
(1) Absolute Maximum Ratings are limits beyond which damage to the device may occur. Operating Ratings are conditions under which  
operation of the device is intended to be functional. For specifications and test conditions, see the Electrical Characteristics.  
(2) If Military/Aerospace specified devices are required, please contact the Texas Instruments Sales Office/ Distributors for availability and  
specifications.  
(3) The human body model is a 100pF capacitor discharged through a 1.5kresistor into each pin.  
(1)  
Operating Ratings  
VIN Voltage  
4.5V to 42V  
Junction Temperature  
40°C to + 125°C  
(1) Absolute Maximum Ratings are limits beyond which damage to the device may occur. Operating Ratings are conditions under which  
operation of the device is intended to be functional. For specifications and test conditions, see the Electrical Characteristics.  
Electrical Characteristics  
Limits in standard type are for TJ = 25°C only; limits in boldface type apply over the junction temperature (TJ) range of -40°C  
to +125°C. Minimum and Maximum limits are specified through test, design, or statistical correlation. Typical values represent  
the most likely parametric norm at TJ = 25°C, and are provided for reference purposes only. Unless otherwise stated the  
following conditions apply: VIN = 24V, RT = 100k.  
Symbol  
VIN Pin  
Parameter  
Conditions  
Min  
Typ  
Max  
Units  
(1)  
IIN  
Operating Current  
Shutdown Current  
Non-Switching, FB = 1.4V  
1.25  
175  
1.75  
300  
mA  
µA  
(1)  
IQ  
RT = 0V  
VCC Regulator(2)  
VCC(reg)  
VIN - VCC  
Vin = 9V, FB = 1.4V, ICC = 0mA  
Vin = 9V, FB = 1.4V, ICC = 20mA  
Vin = 42V, FB = 1.4V, ICC = 0mA  
VCC Increasing  
6.9  
7.7  
7.7  
7.7  
3.8  
8.5  
V
V
V
V
UVLOVcc  
VCC Under-Voltage Lock-Out  
Threshold  
UVLOVcc Hysteresis  
VCC Current Limit  
VCC Decreasing  
FB = 1.4V  
260  
40  
mV  
mA  
VCC(CL)  
PGATE Pin  
VPGATE(HI)  
20  
PGATE High Voltage  
PGATE Low Voltage  
PGATE Pin = Open  
PGATE Pin = Open  
VIN -0.1  
VIN -0.1  
VIN  
VCC  
VIN  
V
V
V
V
A
A
VPGATE(LO)  
VPGATE(HI)4.5  
VPGATE(LO)4.5  
IPGATE  
VCC+0.1  
VCC+0.1  
PGATE High Voltage at Vin = 4.5V PGATE Pin = Open  
PGATE Low Voltage at Vin = 4.5V  
Driver Output Source Current  
Driver Output Sink Current  
Driver Output Resistance  
PGATE Pin = Open  
VCC  
1.75  
1.5  
VIN = 12V, PGATE = VIN - 3.5V  
VIN = 12V, PGATE = VIN - 3.5V  
Source current = 500mA  
Sink current = 500mA  
RPGATE  
2.3  
2.3  
Current Limit Detection  
IADJ  
ADJUST Pin Current Source  
Current Limit Comparator Offset  
VADJ = 22.5V  
32  
-9  
40  
0
48  
9
µA  
VCL OFFSET  
VADJ = 22.5V, VADJ - VISEN  
mV  
(1) Operating current and shutdown current do not include the current in the RT resistor.  
(2) VCC provides self bias for the internal gate drive.  
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Electrical Characteristics (continued)  
Limits in standard type are for TJ = 25°C only; limits in boldface type apply over the junction temperature (TJ) range of -40°C  
to +125°C. Minimum and Maximum limits are specified through test, design, or statistical correlation. Typical values represent  
the most likely parametric norm at TJ = 25°C, and are provided for reference purposes only. Unless otherwise stated the  
following conditions apply: VIN = 24V, RT = 100k.  
Symbol  
RT Pin  
Parameter  
Conditions  
Min  
Typ  
Max  
Units  
RTSD  
Shutdown Threshold  
RT Pin Voltage Rising  
0.73  
50  
V
RTHYS  
Shutdown Threshold Hysteresis  
mV  
On-Time  
tON – 1  
tON – 2  
tON - 3  
tON - 4  
On-Time  
VIN = 4.5V, RT = 100kΩ  
VIN = 24V, RT = 100kΩ  
VIN = 42V, RT = 100kΩ  
3.5  
560  
329  
55  
5
7.15  
870  
500  
235  
µs  
ns  
ns  
ns  
720  
415  
140  
Minimum On-Time in Current Limit VIN = 24V, 25mV Overdrive at ISEN  
(3)  
Off-Time  
(3)  
tOFF(CL1)  
tOFF(CL2)  
tOFF(CL3)  
tOFF(CL4)  
Off-Time (Current Limit)  
VIN = 12V, VFB = 0V  
VIN = 12V, VFB = 1V  
VIN = 24V, VFB = 0V  
VIN = 24V, VFB = 1V  
5.35  
1.42  
8.9  
7.9  
1.9  
13  
10.84  
3.03  
17.7  
4.68  
µs  
µs  
µs  
µs  
2.22  
3.2  
Regulation and Over-Voltage Comparators (FB Pin)  
VREF  
FB Regulation Threshold  
FB Over-Voltage Threshold  
FB Bias Current  
1.225  
1.4  
1.25  
350  
10  
1.275  
V
VOV  
Measured With Respect to VREF  
mV  
nA  
IFB  
Soft-Start Function  
tSS  
Soft-Start Time  
2.5  
4.3  
ms  
Thermal Shutdown  
TSD  
Junction Shutdown Temperature  
Junction Shutdown Hysteresis  
Junction Temperature Rising  
170  
20  
°C  
°C  
THYS  
Thermal Resistance(4)  
θJA Junction to Ambient, 0 LFPM Air  
VSSOP-8 package  
126  
46  
°C/W  
°C/W  
(5)  
Flow  
HVSSOP-PowerPAD-8 package  
WSON-8 package  
54  
θJC  
Junction to Case, 0 LFPM Air Flow VSSOP-8 package  
29  
(5)  
HVSSOP-PowerPAD-8 package  
WSON-8 package  
5.5  
9.1  
(3) The tolerance of the minimum on-time (tON-4) and the current limit off-times (tOFF(CL1) through (tOFF(CL4)) track each other over process  
and temperature variations. A device which has an on-time at the high end of the range will have an off-time that is at the high end of its  
range.  
(4) For detailed information on soldering plastic VSSOP and WSON packages visit www.ti.com/packaging.  
(5) Tested on a 4 layer JEDEC board. Four vias provided under the exposed pad. See JEDEC standards JESD51-5 and JESD51-7.  
4
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SNVS593H OCTOBER 2008REVISED MARCH 2013  
Typical Performance Characteristics  
Unless otherwise specified the following conditions apply: TJ = 25°C, VIN = 24V.  
Efficiency (Circuit of Figure 28)  
Input Operating Current vs. VIN  
Figure 4.  
Figure 5.  
Shutdown Current vs. VIN  
VCC vs. VIN  
Figure 6.  
Figure 7.  
VCC vs. ICC  
On-Time vs. RT and VIN  
Figure 8.  
Figure 9.  
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Typical Performance Characteristics (continued)  
Unless otherwise specified the following conditions apply: TJ = 25°C, VIN = 24V.  
Off-Time vs. VIN and VFB  
Voltage at the RT Pin  
Figure 10.  
Figure 11.  
ADJ Pin Current vs. VIN  
Input Operating Current vs. Temperature  
Figure 12.  
Figure 13.  
Shutdown Current vs. Temperature  
VCC vs. Temperature  
Figure 14.  
Figure 15.  
6
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Typical Performance Characteristics (continued)  
Unless otherwise specified the following conditions apply: TJ = 25°C, VIN = 24V.  
On-Time vs. Temperature  
Minimum On-Time vs. Temperature  
Figure 16.  
Figure 17.  
Off-Time vs. Temperature  
Current Limit Comparator Offset vs. Temperature  
Figure 18.  
Figure 19.  
ADJ Pin Current vs. Temperature  
PGATE Driver Output Resistance vs. Temperature  
Figure 20.  
Figure 21.  
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Typical Performance Characteristics (continued)  
Unless otherwise specified the following conditions apply: TJ = 25°C, VIN = 24V.  
Feedback Reference Voltage vs. Temperature  
Soft-Start Time vs. Temperature  
Figure 22.  
Figure 23.  
RT Pin Shutdown Threshold vs. Temperature  
Figure 24.  
8
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SNVS593H OCTOBER 2008REVISED MARCH 2013  
Block Diagram  
4.5V to 42V  
Input  
Negative Bias  
Regulator  
+
V
LM25085  
IN  
C
VCC  
VCC  
V
IN  
C
IN  
C
ADJ  
+
Thermal  
Shutdown  
7.7V  
GND  
C
-
BYP  
V
IN  
R
-
+
T
R
ADJ  
R
SEN  
0.73V  
VCC  
UVLO  
Gate  
Driver  
RT  
ON Time  
One-Shot  
PGATE  
Q1  
SHUTDOWN  
VCC  
1.25V  
Soft-Start  
L1  
C1  
V
OUT  
Gate Driver  
Control Logic  
R3  
C2  
ADJ  
C
OUT  
40 mA  
+
-
D1  
Q S  
R
+
-
R
R
FB2  
ISEN  
REGULATION  
COMPARATOR  
1.6V  
CURRENT  
LIMIT  
COMPARATOR  
FB1  
OFF Time  
One-Shot  
GND  
-
+
OVER-VOLTAGE  
COMPARATOR  
V
IN  
FB  
Sense resistor method shown for current limit detection.  
Minimum output ripple configuration shown.  
FUNCTIONAL DESCRIPTION  
OVERVIEW  
The LM25085 is a PFET buck (step-down) DC-DC controller using the constant on-time (COT) control principle.  
The input operating voltage range of the LM25085 is 4.5V to 42V. The use of a PFET in a buck regulator greatly  
simplifies the gate drive requirements and allows for 100% duty cycle operation to extend the regulation range  
when operating at low input voltage. However, PFET transistors typically have higher on-resistance and gate  
charge when compared to similarly rated NFET transistors. Consideration of available PFETs, input voltage  
range, gate drive capability of the LM25085, and thermal resistances indicate an upper limit of 10A for the load  
current for LM25085 applications. Constant on-time control is implemented using an on-time one-shot that is  
triggered by the feedback signal. During the off-time, when the PFET (Q1) is off, the load current is supplied by  
the inductor and the output capacitor. As the output voltage falls, the voltage at the feedback comparator input  
(FB) falls below the regulation threshold. When this occurs Q1 is turned on for the one-shot period which is  
determined by the input voltage (VIN) and the RT resistor. During the on-time the increasing inductor current  
increases the voltage at FB above the feedback comparator threshold. For a buck regulator the basic relationship  
between the on-time, off-time, input voltage and output voltage is:  
VOUT  
VIN  
tON  
=
= tON x FS  
Duty Cycle =  
tON + tOFF  
where  
Fs is the switching frequency  
(1)  
Equation 1 is valid only in continuous conduction mode (inductor current does not reach zero). Since the  
LM25085 controls the on-time inversely proportional to VIN, the switching frequency remains relatively constant  
as VIN is varied. If the input voltage falls to a level that is equal to or less than the regulated output voltage Q1 is  
held on continuously (100% duty cycle) and VOUT is approximately equal to VIN.  
The COT control scheme, with the feedback signal applied to a comparator rather than an error amplifier,  
requires no loop compensation, resulting in very fast load transient response.  
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The LM25085 is available in both an 8 pin HVSSOP-PowerPAD package and an 8 pin WSON package with an  
exposed pad to aid in heat dissipation. An 8 pin VSSOP package without an exposed pad is also available.  
REGULATION CONTROL CIRCUIT  
The LM25085 buck DC-DC controller employs a control scheme based on a comparator and a one-shot on-  
timer, with the output voltage feedback compared to an internal reference voltage (1.25V). When the FB pin  
voltage falls below the feedback reference, Q1 is switched on for a time period determined by the input voltage  
and a programming resistor (RT). Following the on-time Q1 remains off until the FB voltage falls below the  
reference. Q1 is then switched on for another on-time period. The output voltage is set by the feedback resistors  
(RFB1, RFB2 in Block Diagram). The regulated output voltage is calculated as follows:  
VOUT = 1.25V x (RFB2+ RFB1)/ RFB1  
(2)  
The feedback voltage supplied to the FB pin is applied to a comparator rather than a linear amplifier. For proper  
operation sufficient ripple amplitude is necessary at the FB pin to switch the comparator at regular intervals with  
minimum delay and noise susceptibility. This ripple is normally obtained from the output voltage ripple attenuated  
through the feedback resistors. The output voltage ripple is a result of the inductor’s ripple current passing  
through the output capacitor’s ESR, or through a resistor in series with the output capacitor. Multiple methods are  
available to ensure sufficient ripple is supplied to the FB pin, and three different configurations are discussed in  
Applications Information.  
When in regulation, the LM25085 operates in continuous conduction mode at medium to heavy load currents and  
discontinuous conduction mode at light load currents. In continuous conduction mode the inductor’s current is  
always greater than zero, and the operating frequency remains relatively constant with load and line variations.  
The minimum load current for continuous conduction mode is one-half the inductor’s ripple current amplitude. In  
discontinuous conduction mode, where the inductor’s current reaches zero during the off-time, the operating  
frequency is lower than in continuous conduction mode and varies with load current. Conversion efficiency is  
maintained at light loads since the switching losses are reduced with the reduction in load and frequency.  
If the voltage at the FB pin exceeds 1.6V due to a transient overshoot or excessive ripple at VOUT the internal  
over-voltage comparator immediately switches off Q1. The next on-time period starts when the voltage at FB falls  
below the feedback reference voltage.  
ON-TIME TIMER  
The on-time of the PFET gate drive output (PGATE pin) is determined by the resistor (RT) and the input voltage  
(VIN), and is calculated from:  
1.45 x 10-7 x (RT + 1.4)  
tON  
=
+ 50 ns  
(VIN - 1.56V + RT/3167)  
where  
RT is in kΩ  
(3)  
The minimum on-time, which occurs at maximum VIN, should not be set less than 150ns (see CURRENT  
LIMITING). The buck regulator effective on-time, measured at the SW node (junction of Q1, L1, and D1) is  
typically longer than that calculated in Equation 3 due to the asymmetric delay of the PFET. The on-time  
difference caused by the PFET switching delay can be estimated as the difference of the turn-off and turn-on  
delays listed in the PFET data sheet. Measuring the difference between the on-time at the PGATE pin versus the  
SW node in the actual application circuit is also recommended.  
In continuous conduction mode, the inverse relationship of tON with VIN results in a nearly constant switching  
frequency as VIN is varied. The operating frequency can be calculated from:  
VOUT x (VIN - 1.56V + RT/3167)  
FS =  
VIN x [(1.45 x 10-7 x (RT + 1.4)) + (tD x (VIN - 1.56V + RT/3167))]  
where  
RT is in kΩ  
tD is equal to 50ns plus the PFET’s delay difference  
(4)  
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To set a specific continuous conduction mode switching frequency (FS), the RT resistor is determined from the  
following:  
where  
RT is in kΩ  
(5)  
A simplified version of Equation 5 at VIN = 12V, and tD = 100ns, is:  
VOUT x 6 x 106  
- 8.6  
RT =  
FS  
For VIN = 42V and tD = 100ns, the simplified equation is:  
SHUTDOWN  
The LM25085 can be shutdown by grounding the RT pin (see Figure 25). In this mode the PFET is held off, and  
the VCC regulator is disabled. The internal operating current is reduced to the value shown in Figure 6. The  
shutdown threshold at the RT pin is 0.73V, with 50mV of hysteresis. Releasing the pin enables normal  
operation. The RT pin must not be forced high during normal operation.  
VIN  
Input  
Voltage  
R
LM25085  
T
RT  
STOP  
RUN  
Figure 25. Shutdown Implementation  
CURRENT LIMITING  
The LM25085 current limiting operates by sensing the voltage across either the RDS(ON) of Q1, or a sense  
resistor, during the on-time and comparing it to the voltage across the resistor RADJ (see Figure 26). The current  
limit function is much more accurate and stable over temperature when a sense resistor is used. The RDS(ON) of a  
MOSFET has a wide process variation and a large temperature coefficient.  
If the voltage across RDS(ON) of Q1, or the sense resistor, is greater than the voltage across RADJ, the current limit  
comparator switches to turn off Q1. Current sensing is disabled for a blanking time of 100ns at the beginning of  
the on-time to prevent false triggering of the current limit comparator due to leading edge current spikes.  
Because of the blanking time and the turn-on and turn-off delays created by the PFET, the on-time at the PGATE  
pin should not be set less than 150ns. An on-time shorter than that may prevent the current limit detection circuit  
from properly detecting an over-current condition. The duration of the subsequent forced off-time is a function of  
the input voltage and the voltage at the FB pin, as shown in Figure 10. The longer-than-normal forced off-time  
allows the inductor current to decrease to a low level before the next on-time. This cycle-by-cycle monitoring,  
followed by a forced off-time, provides effective protection from output load faults over a wide range of operating  
conditions.  
The voltage across the RADJ resistor is set by an internal 40µA current sink at the ADJ pin. When using Q1’s  
RDS(ON) for sensing, the current at which the current limit comparator switches is calculated from:  
ICL = 40µA x RADJ/RDS(ON)  
(6)  
When using a sense resistor (RSEN) the threshold of the current limit comparator is calculated from:  
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ICL = 40µA x RADJ/RSEN  
(7)  
When using Equation 6 or Equation 7, the tolerances for the ADJ pin current sink and the offset of the current  
limit comparator should be included to ensure the resulting minimum current limit is not less than the required  
maximum switch current. Simultaneously increasing the values of RADJ and RSEN decreases the effects of the  
current limit comparator offset, but at the expense of higher power dissipation. When using a sense resistor, the  
RSEN resistor value should be chosen within the practical limitations of power dissipation and physical size. For  
example, for a 10A current limit, setting RSEN = 0.005results in a power dissipation as high as 0.5W. Current  
sense connections to the RSEN resistor, or to Q1, must be Kelvin connections to ensure accuracy.  
The CADJ capacitor filters noise from the ADJ pin, and helps prevent unintended switching of the current limit  
comparator due to input voltage transients. The recommended value for CADJ is 1000pF.  
CURRENT LIMIT OFF-TIME  
When the current through Q1 exceeds the current limit threshold, the LM25085 forces an off-time longer than the  
normal off-time defined by Equation 1. See Figure 10 or calculate the current limit off-time from the following  
equation:  
where  
VIN is the input voltage  
VFB is the voltage at the FB pin at the time current limit was detected  
(8)  
This feature is necessary to allow the inductor current to decrease sufficiently to offset the current increase which  
occurred during the on-time. During the on-time, the inductor current increases an amount equal to:  
(VIN - VOUT) x tON  
DI =  
L
(9)  
During the off-time the inductor current decreases due to the reverse voltage applied across the inductor by the  
output voltage, the freewheeling diode’s forward voltage (VFD), and the voltage drop due to the inductor’s series  
resistance (VESR). The current decrease is equal to:  
(VOUT + VFD + VESR) x tOFF  
DI =  
L
(10)  
The on-time in Equation 9 is shorter than the normal on-time since the PFET is shut off when the current limit  
threshold is crossed. If the off-time is not long enough, such that the current decrease (Equation 10) is less than  
the current increase (Equation 9), the current levels are higher at the start of the next on-time. This results in a  
further decrease in on-time, since the current limit threshold is crossed sooner. A balance is reached when the  
current changes in Equation 9 and Equation 10 are equal. The worst case situation is that of a direct short circuit  
at the output terminals, where VOUT = 0V, as that results in the largest current increase during the on-time, and  
the smallest decrease during the off-time. The sum of the diode’s forward voltage and the inductor’s ESR voltage  
must be sufficient to ensure current runaway does not occur. Using Equation 9 and Equation 10, this requirement  
can be stated as:  
VIN x tON  
VFD + VESR  
í
tOFF  
(11)  
For tON in Equation 11 use the minimum on-time at the SW node. To determine this time period add the  
“Minimum on-time in current limit” specified in Electrical Characteristics (tON-4) to the difference of the turn-off  
and turn-on delays of the PFET. For tOFF use the value in Figure 10 or use Equation 8, where VFB is equal to  
zero volts. When using the minimum or maximum limits of those specifications to determine worst case  
situations, the tolerance of the minimum on-time (tON-4) and the current limit off-times (tOFF(CL1) through tOFF(CL4)  
)
track each other over the process and temperature variations. A device which has an on-time at the high end of  
the range will have an off-time that is at the high end of its range.  
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V
IN  
V
IN  
LM25085  
LM25085  
R
ADJ  
R
ADJ  
ADJ  
ADJ  
40 mA  
40 mA  
CURRENT LIMIT  
COMPARATOR  
CURRENT LIMIT  
COMPARATOR  
R
SEN  
C
ADJ  
C
ADJ  
+
-
+
-
ISEN  
ISEN  
VIN  
VIN  
GATE  
GATE  
DRIVER  
DRIVER  
L1  
Q1  
Q1  
L1  
PGATE  
PGATE  
VCC  
VCC  
D1  
D1  
USING Q1 R  
DS(ON)  
USING SENSE RESISTOR R  
SEN  
Figure 26. Current Limit Sensing  
VCC REGULATOR  
The VCC regulator provides a regulated voltage between the VIN and the VCC pins to provide the bias and gate  
current for the PFET gate driver. The 0.47µF capacitor at the VCC pin must be a low ESR capacitor, preferably  
ceramic as it provides the high surge current for the PFET’s gate at each turn-on. The capacitor must be located  
as close as possible to the VIN and VCC pins to minimize inductance in the PC board traces.  
Referring to Figure 7, the voltage across the VCC regulator (VIN – VCC) is equal to VIN until VIN reaches  
approximately 8.5V. At higher values of VIN, the voltage at the VCC pin is regulated at approximately 7.7V below  
VIN. If VIN drops below about 8V due to voltage transients, the VCC pin can be pulled down below GND. To  
prevent the negative VCC voltage from disturbing the internal circuit and causing abnormal operation, a Schottky  
diode is recommended between VCC pin and GND pin. The VCC regulator has a maximum current capability of  
at least 20mA. The regulator is disabled when the LM25085 is shutdown using the RT pin, or when the thermal  
shutdown is activated.  
PGATE DRIVER OUTPUT  
The PGATE pin output swings between VIN (Q1 off) and the VCC pin voltage (Q1 on). The rise and fall times  
depend on the PFET gate capacitance and the source and sink currents provided by the internal gate driver. See  
Electrical Characteristics for the current capability of the driver.  
P-CHANNEL MOSFET SELECTION  
The PFET must be rated for the maximum input voltage, with some margin above that to allow for transients and  
ringing which can occur on the supply line and the switching node. The gate-to-source voltage (VGS) normally  
provided to the PFET is 7.7V for VIN greater than 8.5V. However, if the circuit is to be operated at lower values  
of VIN, the selected PFET must be able to fully turn-on with a VGS voltage equal to VIN. The minimum input  
operating voltage for the LM25085 is 4.5V.  
Similar to NFETs, the case or exposed thermal pad for a PFET is electrically connected to the drain terminal.  
When designing a PFET buck regulator the drain terminal is connected to the switching node. This situation  
requires a trade-off between thermal and EMI performance since increasing the PC board area of the switching  
node to aid the PFET power dissipation also increases radiated noise, possibly disrupting the circuit operation.  
Typically the switching node area is kept to a reasonable minimum and the PFET peak current is derated to stay  
within the recommended temperature rating of the PFET. The RDS(ON) of the PFET determines a portion of the  
power dissipation in the PFET. However, PFETs with very low RDS(ON) usually have large values of gate charge.  
A PFET with a higher gate charge has a corresponding slower switching speed, leading to higher switching  
losses and affecting the PFET power dissipation.  
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If the PFET RDS(ON) is used for current limit detection, note that it typically has a positive temperature coefficient.  
At 100°C the RDS(ON) may be as much as 50% higher than the value at 25°C which could result in incorrect  
current limiting if not accounted for when determining the value of the RADJ resistor. The PFET Total Gate  
Charge determines most of the power dissipation in the LM25085 due to the repetitive charge and discharge of  
the PFET’s gate capacitance by the gate driver (powered from the VCC regulator). The LM25085’s internal  
power dissipation can be calculated from the following:  
PDISS = VIN x ((QG x FS) + IIN)  
where  
QG is the PFET Total Gate Charge obtained from its datasheet  
FS is the switching frequency  
IIN is the LM25085's operating current obtained from Figure 5  
(12)  
Using the Thermal Resistance specifications in Electrical Characteristics, the approximate junction temperature  
can be determined. If the calculated junction temperature is near the maximum operating temperature of 125°C,  
either the switching frequency must be reduced, or a PFET with a smaller Total Gate Charge must be used.  
SOFT-START  
The internal soft-start feature of the LM25085 allows the regulator to gradually reach a steady state operating  
point at power up, thereby reducing startup stresses and current surges. Upon turn-on, when VCC reaches its  
under-voltage lockout threshold, the internal soft-start circuit ramps the feedback reference voltage from 0V to  
1.25V, causing VOUT to ramp up in a proportional manner. The soft-start ramp time is typically 2.5ms.  
In addition to controlling the initial power up cycle, the soft-start circuit also activates when the LM25085 is  
enabled by releasing the RT pin, and when the circuit is shutdown and restarted by the internal Thermal  
Shutdown circuit.  
If the voltage at FB is below the regulation threshold value due to an over-current condition or a short circuit at  
VOUT, the internal reference voltage provided by the soft-start circuit to the regulation comparator is reduced  
along with FB. When the over-current or short circuit condition is removed, VOUT returns to the regulated value at  
a rate determined by the soft-start ramp. This feature helps prevent the output voltage from overshooting  
following an overload event.  
THERMAL SHUTDOWN  
The LM25085 should be operated such that the junction temperature does not exceed 125°C. If the junction  
temperature increases above that, an internal Thermal Shutdown circuit activates at 170°C (typical) to disable  
the VCC regulator and the gate driver, and discharge the soft-start capacitor. This feature helps prevent  
catastrophic failures from accidental device overheating. When the junction temperature falls below 150°C  
(typical hysteresis = 20°C), the gate driver is enabled, the soft-start circuit is released, and normal operation  
resumes.  
Applications Information  
EXTERNAL COMPONENTS  
The procedure for calculating the external components is illustrated with the following design example. Referring  
to Block Diagram, the circuit is to be configured for the following specifications:  
VOUT = 5V  
VIN = 7V to 42V, 12V Nominal  
Maximum load current (IOUT(max)) = 5A  
Minimum load current (IOUT(min)) = 600mA (for continuous conduction mode)  
Switching Frequency (FSW) = 300kHz  
Maximum allowable output ripple (VOS) = 5mVp-p  
Selected PFET: Vishay Si7465  
RFB1 and RFB2: These resistors set the output voltage. The ratio of these resistors is calculated from:  
RFB2/RFB1 = (VOUT/1.25V) - 1  
For this example, RFB2 / RFB1 = 3. Typically, RFB1 and RFB2 should be chosen from standard value resistors in  
the range of 1kto 20kwhich satisfy the above ratio. For this example, RFB2 = 10k, and RFB1 = 3.4k.  
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RT, PFET: Before selecting the RT resistor, the PFET must be selected as its turn-on and turn-off delays  
affect the calculated value of RT. For the Vishay Si7465 PFET, the difference of its typical turn-off and turn-on  
delays is 57ns. Using Equation 5 at nominal input voltage, RT calculates to be:  
(50 ns + 57 ns) x (12 - 1.56V)  
1.45 x 10-7  
5 x (12 - 1.56V)  
1.45 x 10-7 x 12 x 300 kHz  
- 1.4 = 90.9  
-
RT =  
A standard value 90.9kresistor is selected. Using Equation 3 the minimum on-time at the PGATE pin, which  
occurs at maximum input voltage (42V), is calculated to be 381ns. This minimum one-shot period is  
sufficiently longer than the minimum recommended value of 150ns. The minimum on-time at the SW node is  
longer due to the delay added by the PFET (57ns). Therefore the minimum SW node on-time is 438ns at  
42V. At the SW node the maximum on-time is calculated to be 2.55µs at 7V.  
L1: The main parameter controlled by the inductor value is the current ripple amplitude (IOR). See Figure 27.  
The minimum load current for continuous conduction mode is used to determine the maximum allowable  
ripple such that the inductor current’s lower peak does not fall below 0mA. Continuous conduction mode  
operation at minimum load current is not a requirement of the LM25085, but serves as a guideline for  
selecting L1. For this example, the maximum ripple current is:  
IOR(max) = 2 x IOUT(min) = 1.2 Amp  
(13)  
If an application’s minimum load current is zero, a good initial estimate for the maximum ripple current  
(IOR(max)) is 20% of the maximum load current. The ripple calculated in Equation 13 is then used in the  
following equation to calculate L1:  
tON(min) x (VIN(max) - VOUT  
)
L1 =  
= 13.5 mH  
IOR(max)  
(14)  
A standard value 15µH inductor is selected. Using this inductance value, the maximum ripple current  
amplitude, which occurs at maximum input voltage, calculates to 1.08Ap-p. The peak current (IPK) at  
maximum load current is 5.54A. However, the current rating of the selected inductor must be based on the  
maximum current limit value calculated below.  
I
PK  
I
OUT  
I
OR  
1/F  
S
Figure 27. Inductor Current Waveform  
RSEN, RADJ: To achieve good current limit accuracy and avoid over designing the power stage components,  
the sense resistor method is used for current limiting in this example. A standard value 10mresistor is  
selected for RSEN, resulting in a 50mV drop at maximum load current, and a maximum 0.25W power  
dissipation in the resistor. Since the LM25085 uses peak current detection, the minimum value for the current  
limit threshold must be equal to the maximum load current (5A) plus half the maximum ripple amplitude  
calculated above:  
ICL(min) = 5A + 1.08A/2 = 5.54A  
At this current level the voltage across RSEN is 55.4mV. Adding the current limit comparator offset of 9mV  
(max) increases the required current limit threshold to 6.44A. Using Equation 7 with the minimum value for  
the ADJ pin current (32µA), the required RADJ resistor calculates to:  
6.44A x 0.01W  
= 2.01 kW  
RADJ  
=
32 mA  
A standard value 2.1kresistor is selected. The nominal current limit threshold calculates to:  
(2.1 kW x 40 mA)  
= 8.4A  
ICL(nom)  
=
0.01W  
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Using the tolerances for the ADJ pin current and the current limit comparator offset, the maximum current limit  
threshold calculates to:  
(2.1 kW x 48 mA) + 9 mV  
= 11A  
ICL(max)  
=
0.01W  
The minimum current limit thresholds calculate to:  
(2.1 kW x 32 mA) - 9 mV  
= 5.82A  
ICL(min)  
=
0.01W  
The load current in each case is equal to the current limit threshold minus half the current ripple amplitude.  
The recommended value of 1000pF for CADJ is used in this example.  
COUT: Since the maximum allowed output ripple voltage is very low in this example (5mVp-p), the minimum  
ripple configuration (R3, C1, and C2 in the Block Diagram) must be used. The resulting ripple at VOUT is then  
due to the inductor’s ripple current passing through COUT. This capacitor’s value can be selected based on the  
maximum allowable ripple voltage at VOUT, or based on transient response requirements. The following  
calculation, based on ripple voltage, provides a first order result for the value of COUT  
:
IOR(max)  
COUT  
=
8 x FS x VRIPPLE  
where IOR(max) is the maximum ripple current calculated above, and VRIPPLE is the allowable ripple at VOUT  
.
1.08A  
8 x 300 kHz x 0.005V  
COUT  
=
= 90 mF  
R3, C1, C2: The minimum ripple configuration uses these three components to generate the ripple voltage  
required at the FB pin since there is insufficient ripple at VOUT. A minimum of 25mVp-p must be applied to the  
FB pin to obtain stable constant frequency operation. R3 and C1 are selected to generate a sawtooth  
waveform at their junction, and that waveform is AC coupled to the FB pin via C2. The values of the three  
components are determined using the following procedure:  
A 100µF capacitor is selected. Typically the ripple amplitude will be higher than the calculations indicate due  
to the capacitor’s ESR.  
Calculate VA = VOUT - (VSW x (1 – (VOUT/VIN(min))))  
where VSW is the absolute value of the voltage at the SW node during the off-time, typically 0.5V to 1V  
depending on the diode D1. Using a typical value of 0.65V, VA calculates to 4.81V. VA is the nominal DC  
voltage at the R3/C1 junction, and is used in the next equation:  
(VIN(min) - VA) x tON  
R3 x C1 =  
DV  
where tON is the maximum on-time (at minimum input voltage, and ΔV is the desired ripple amplitude at the  
R3/C1 junction, typically 25mVp-p.  
(7V - 4.81V) x 2.55 ms  
= 2.23 x 10-4  
R3 x C1 =  
0.025V  
R3 and C1 are then selected from standard value components to produce the product calculated above.  
Typical values for C1 are 3000pF to 10,000pF, and R3 is typically from 10kto 300k. C2 is then chosen  
large compared to C1, typically 0.1µF. For this example, 3300pF is chosen for C1, requiring R3 to be 67.7k.  
A standard value 66.5kresistor is selected.  
CIN, CBYP: These capacitors limit the voltage ripple at VIN by supplying most of the switch current during the  
on-time. At maximum load current, when Q1 is switched on, the current through Q1 suddenly increases to the  
lower peak of the inductor’s ripple current, then ramps up to the upper peak, and then drops to zero at turn-  
off. The average current during the on-time is the load current. For a worst case calculation, these capacitors  
must supply this average load current during the maximum on-time, while limiting the voltage drop at VIN. For  
this example, 0.5V is selected as the maximum allowable droop at VIN. Their minimum value is calculated  
from:  
IOUT(max) x tON(max)  
5A x 2.55 ms  
CIN + CBYP  
=
=
= 25.5 mF  
DV  
0.5V  
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A 33µF electrolytic capacitor is selected for CIN, and a 1µF ceramic capacitor is selected for CBYP. Due to the  
ESR of CIN, the ripple at VIN will likely be higher than the calculation indicates, and therefore it may be  
desirable to increase CIN to 47µF or 68µF. CBYP must be located as close as possible to the VIN and GND  
pins of the LM25085. The voltage rating for both capacitors must be at least 42V. The RMS ripple current  
rating for the input capacitors must also be considered. A good approximation for the required ripple current  
rating is IRMS > IOUT/2.  
D1: A Schottky diode is recommended. Ultra-fast recovery diodes are not recommended as the high speed  
transitions at the SW pin may affect the regulator’s operation due to the diode’s reverse recovery transients.  
The diode must be rated for the maximum input voltage, and the worst case current limit level. The average  
power dissipation in the diode is calculated from:  
PD1 = VF x IOUT x (1-D)  
where VF is the diode’s forward voltage drop, and D is the on-time duty cycle. Using Equation 1, the minimum  
duty cycle occurs at maximum input voltage, and is calculated to be 11.9% in this example. The diode power  
dissipation calculates to be:  
PD1 = 0.65V x 5A x (1- 0.119) = 2.86W  
CVCC: The capacitor at the VCC pin (from VIN to VCC) provides not only noise filtering and stability for the  
VCC regulator, but also provides the surge current for the PFET gate drive. The typical recommended value  
for CVCC is 0.47µF. A good quality, low ESR, ceramic capacitor is recommended. CVCC must be located as  
close as possible to the VIN and VCC pins. If the selected PFET has a Total Gate Charge specification of  
100nC or larger, or if the circuit is required to operate at input voltages below 7V, a larger capacitor may be  
required. The maximum recommended value for CVCC is 1µF.  
IC Power Dissipation: The maximum power dissipated in the LM25085 package is calculated using  
Equation 12 at the maximum input voltage. The Total Gate Charge for the Si7465 PFET is specified to be  
40nC (max) in its data sheet. Therefore the total power dissipation within the LM25085 is calculated to be:  
PDISS = 42V x ((40nC x 300kHz) + 1.3mA) = 559mW  
Using an HVSSOP-PowerPAD-8 package with a θJA of 46°C/W produces a temperature rise of 26°C from  
junction to ambient.  
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Final Design Example Circuit  
The final circuit is shown in Figure 28, and its performance is presented in Figure 29 through Figure 32.  
C
VCC  
7V to 42V  
Input  
LM25085  
0.47 mF  
VCC  
ADJ  
C
VIN  
RT  
V
ADJ  
IN  
1000 pF  
C
BYP  
C
IN  
1 mF  
33 mF  
R
ADJ  
R
SEN  
GND  
R
T
2.1 kW  
0.01W  
90.9 kW  
ISEN  
L1 15 mH  
PGATE  
V
OUT  
SHUTDOWN  
Q1  
5V  
C
OUT  
R
R3  
66.5 kW  
C2  
FB2  
C1  
3300 pF  
100 mF  
10 kW  
D1  
GND  
0.1 mF  
GND  
R
FB1  
FB  
3.4 kW  
Figure 28. Example Circuit  
Figure 29. Efficiency vs. Load Current and VIN  
(Circuit of Figure 28)  
Figure 30. Frequency vs. VIN (Circuit of Figure 28)  
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Figure 31. Current Limit vs. VIN (Circuit of  
Figure 32. LM25085 Power Dissipation (Circuit of  
Figure 28)  
Figure 28)  
Alternate Output Ripple Configurations  
The minimum ripple configuration, using C1, C2 and R3, used in the example circuit, Figure 28, results in a low  
ripple amplitude at VOUT determined mainly by the characteristics of the output capacitor and the ripple current in  
L1. This configuration allows multiple ceramic capacitors to be used for VOUT if the output voltage is provided to  
several places on the PC board. However, if a slightly higher level of ripple at VOUT is acceptable in the  
application, and distributed capacitance is not used, the ripple required for the FB comparator pin can be  
generated with fewer external components using the circuits shown below.  
Reduced ripple configuration: In Figure 33, R3, C1 and C2 are removed (compared to Figure 28). A low value  
resistor (R4) is added in series with COUT, and a capacitor (Cff) is added across RFB2. Ripple is generated at  
VOUT by the inductor’s ripple current flowing through R4, and that ripple voltage is passed to the FB pin via Cff.  
The ripple at VOUT can be set as low as 25mVp-p since it is not attenuated by RFB2 and RFB1. The minimum value  
for R4 is calculated from:  
25 mV  
IOR(min)  
R4 =  
where IOR(min) is the minimum ripple current, which occurs at minimum input voltage. The minimum value for Cff  
is determined from:  
3 x tON(max)  
Cff =  
(RFB1//RFB2  
)
where tON(max) is the maximum on-time, which occurs at minimum VIN. The next larger standard value capacitor  
should be used for Cff.  
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LM25085  
L1  
PGATE  
Q1  
V
OUT  
D1  
Cff  
R4  
R
FB2  
FB  
C
OUT  
GND  
R
FB1  
GND  
Figure 33. Reduced Ripple Configuration  
Lowest cost configuration: This configuration, shown in Figure 34, is the same as Figure 33 except Cff is  
removed. Since the ripple voltage at VOUT is attenuated by RFB2 and RFB1, the minimum ripple required at VOUT is  
equal to:  
VRIP(min) = 25mV x (RFB2 + RFB1)/RFB1  
The minimum value for R4 is calculated from:  
VRIP(min)  
R4 =  
IOR(min)  
where IOR(min) is the minimum ripple current, which occurs at minimum input voltage.  
LM25085  
L1  
PGATE  
Q1  
V
OUT  
D1  
R4  
R
R
FB2  
FB  
C
OUT  
GND  
FB1  
GND  
Figure 34. Lowest Cost Ripple Generating Configuration  
PC Board Layout  
In most applications, the heat sink pad or tab of Q1 is connected to the switch node, i.e. the junction of Q1, L1  
and D1. While it is common to extend the PC board pad from under these devices to aid in heat dissipation, the  
pad size should be limited to minimize EMI radiation from this switching node. If the PC board layout allows, a  
similarly sized copper pad can be placed on the underside of the PC board, and connected with as many vias as  
possible to aid in heat dissipation.  
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SNVS593H OCTOBER 2008REVISED MARCH 2013  
The voltage regulation, over-voltage, and current limit comparators are very fast and can respond to short  
duration noise pulses. Layout considerations are therefore critical for optimum performance. The layout must be  
as neat and compact as possible with all the components as close as possible to their associated pins. Two  
major current loops conduct currents which switch very fast, requiring the loops to be as small as possible to  
minimize conducted and radiated EMI. The first loop is that formed by CIN, Q1, L1, COUT, and back to CIN. The  
second loop is that formed by D1, L1, COUT, and back to D1. The connection from the anode of D1 to the ground  
end of CIN must be short and direct. CIN must be as close as possible to the VIN and GND pins, and CVCC must  
be as close as possible to the VIN and VCC pins.  
If the anticipated internal power dissipation of the LM25085 will produce excessive junction temperatures during  
normal operation, a package option with an exposed pad must be used (HVSSOP-PowerPAD-8 or WSON-8).  
Effective use of the PC board ground plane can help dissipate heat. Additionally, the use of wide PC board  
traces, where possible, helps conduct heat away from the IC. Judicious positioning of the PC board within the  
end product, along with the use of any available air flow (forced or natural convection) also helps reduce the  
junction temperature.  
Copyright © 2008–2013, Texas Instruments Incorporated  
Submit Documentation Feedback  
21  
Product Folder Links: LM25085 LM25085-Q1  
 
LM25085, LM25085-Q1  
SNVS593H OCTOBER 2008REVISED MARCH 2013  
www.ti.com  
REVISION HISTORY  
Changes from Revision G (March 2013) to Revision H  
Page  
Changed layout of National Data Sheet to TI format .......................................................................................................... 21  
22  
Submit Documentation Feedback  
Copyright © 2008–2013, Texas Instruments Incorporated  
Product Folder Links: LM25085 LM25085-Q1  
PACKAGE OPTION ADDENDUM  
www.ti.com  
19-Jul-2013  
PACKAGING INFORMATION  
Orderable Device  
LM25085MM/NOPB  
LM25085MME/NOPB  
LM25085MMX/NOPB  
LM25085MY/NOPB  
LM25085MYE/NOPB  
LM25085MYX/NOPB  
LM25085QMY/NOPB  
LM25085QMYE/NOPB  
LM25085QMYX/NOPB  
LM25085SD/NOPB  
LM25085SDE/NOPB  
LM25085SDX/NOPB  
Status Package Type Package Pins Package  
Eco Plan Lead/Ball Finish  
MSL Peak Temp  
Op Temp (°C)  
-40 to 125  
-40 to 125  
-40 to 125  
-40 to 125  
-40 to 125  
-40 to 125  
-40 to 125  
-40 to 125  
-40 to 125  
-40 to 125  
-40 to 125  
-40 to 125  
Device Marking  
Samples  
Drawing  
Qty  
(1)  
(2)  
(3)  
(4/5)  
ACTIVE  
VSSOP  
VSSOP  
VSSOP  
DGK  
8
8
8
8
8
8
8
8
8
8
8
8
1000  
Green (RoHS  
& no Sb/Br)  
CU SN  
CU SN  
CU SN  
CU SN  
CU SN  
CU SN  
CU SN  
CU SN  
CU SN  
Call TI  
Call TI  
Call TI  
Level-1-260C-UNLIM  
Level-1-260C-UNLIM  
Level-1-260C-UNLIM  
Level-1-260C-UNLIM  
Level-1-260C-UNLIM  
Level-1-260C-UNLIM  
Level-1-260C-UNLIM  
Level-1-260C-UNLIM  
Level-1-260C-UNLIM  
Level-1-260C-UNLIM  
Level-1-260C-UNLIM  
Level-1-260C-UNLIM  
SVZB  
SVZB  
SVZB  
SVYB  
SVYB  
SVYB  
SYLB  
SYLB  
SYLB  
ACTIVE  
ACTIVE  
ACTIVE  
ACTIVE  
ACTIVE  
ACTIVE  
ACTIVE  
ACTIVE  
ACTIVE  
ACTIVE  
ACTIVE  
DGK  
DGK  
DGN  
DGN  
DGN  
DGN  
DGN  
DGN  
NGQ  
NGQ  
NGQ  
250  
3500  
1000  
250  
Green (RoHS  
& no Sb/Br)  
Green (RoHS  
& no Sb/Br)  
MSOP-  
PowerPAD  
Green (RoHS  
& no Sb/Br)  
MSOP-  
PowerPAD  
Green (RoHS  
& no Sb/Br)  
MSOP-  
PowerPAD  
3500  
1000  
250  
Green (RoHS  
& no Sb/Br)  
MSOP-  
PowerPAD  
Green (RoHS  
& no Sb/Br)  
MSOP-  
PowerPAD  
Green (RoHS  
& no Sb/Br)  
MSOP-  
PowerPAD  
3500  
1000  
250  
Green (RoHS  
& no Sb/Br)  
WSON  
WSON  
WSON  
Green (RoHS  
& no Sb/Br)  
L246B  
L246B  
L246B  
Green (RoHS  
& no Sb/Br)  
4500  
Green (RoHS  
& no Sb/Br)  
(1) The marketing status values are defined as follows:  
ACTIVE: Product device recommended for new designs.  
LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect.  
NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design.  
PREVIEW: Device has been announced but is not in production. Samples may or may not be available.  
OBSOLETE: TI has discontinued the production of the device.  
(2) Eco Plan - The planned eco-friendly classification: Pb-Free (RoHS), Pb-Free (RoHS Exempt), or Green (RoHS & no Sb/Br) - please check http://www.ti.com/productcontent for the latest availability  
information and additional product content details.  
TBD: The Pb-Free/Green conversion plan has not been defined.  
Addendum-Page 1  
PACKAGE OPTION ADDENDUM  
www.ti.com  
19-Jul-2013  
Pb-Free (RoHS): TI's terms "Lead-Free" or "Pb-Free" mean semiconductor products that are compatible with the current RoHS requirements for all 6 substances, including the requirement that  
lead not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, TI Pb-Free products are suitable for use in specified lead-free processes.  
Pb-Free (RoHS Exempt): This component has a RoHS exemption for either 1) lead-based flip-chip solder bumps used between the die and package, or 2) lead-based die adhesive used between  
the die and leadframe. The component is otherwise considered Pb-Free (RoHS compatible) as defined above.  
Green (RoHS & no Sb/Br): TI defines "Green" to mean Pb-Free (RoHS compatible), and free of Bromine (Br) and Antimony (Sb) based flame retardants (Br or Sb do not exceed 0.1% by weight  
in homogeneous material)  
(3) MSL, Peak Temp. -- The Moisture Sensitivity Level rating according to the JEDEC industry standard classifications, and peak solder temperature.  
(4) There may be additional marking, which relates to the logo, the lot trace code information, or the environmental category on the device.  
(5) Multiple Device Markings will be inside parentheses. Only one Device Marking contained in parentheses and separated by a "~" will appear on a device. If a line is indented then it is a continuation  
of the previous line and the two combined represent the entire Device Marking for that device.  
Important Information and Disclaimer:The information provided on this page represents TI's knowledge and belief as of the date that it is provided. TI bases its knowledge and belief on information  
provided by third parties, and makes no representation or warranty as to the accuracy of such information. Efforts are underway to better integrate information from third parties. TI has taken and  
continues to take reasonable steps to provide representative and accurate information but may not have conducted destructive testing or chemical analysis on incoming materials and chemicals.  
TI and TI suppliers consider certain information to be proprietary, and thus CAS numbers and other limited information may not be available for release.  
In no event shall TI's liability arising out of such information exceed the total purchase price of the TI part(s) at issue in this document sold by TI to Customer on an annual basis.  
OTHER QUALIFIED VERSIONS OF LM25085, LM25085-Q1 :  
Catalog: LM25085  
Automotive: LM25085-Q1  
NOTE: Qualified Version Definitions:  
Catalog - TI's standard catalog product  
Automotive - Q100 devices qualified for high-reliability automotive applications targeting zero defects  
Addendum-Page 2  
PACKAGE MATERIALS INFORMATION  
www.ti.com  
11-Oct-2013  
TAPE AND REEL INFORMATION  
*All dimensions are nominal  
Device  
Package Package Pins  
Type Drawing  
SPQ  
Reel  
Reel  
A0  
B0  
K0  
P1  
W
Pin1  
Diameter Width (mm) (mm) (mm) (mm) (mm) Quadrant  
(mm) W1 (mm)  
LM25085MM/NOPB  
LM25085MME/NOPB  
LM25085MMX/NOPB  
LM25085MY/NOPB  
VSSOP  
VSSOP  
VSSOP  
DGK  
DGK  
DGK  
DGN  
8
8
8
8
1000  
250  
178.0  
178.0  
330.0  
178.0  
12.4  
12.4  
12.4  
12.4  
5.3  
5.3  
5.3  
5.3  
3.4  
3.4  
3.4  
3.4  
1.4  
1.4  
1.4  
1.4  
8.0  
8.0  
8.0  
8.0  
12.0  
12.0  
12.0  
12.0  
Q1  
Q1  
Q1  
Q1  
3500  
1000  
MSOP-  
Power  
PAD  
LM25085MYE/NOPB  
LM25085MYX/NOPB  
LM25085QMY/NOPB  
LM25085QMYE/NOPB  
LM25085QMYX/NOPB  
LM25085SD/NOPB  
MSOP-  
Power  
PAD  
DGN  
DGN  
DGN  
DGN  
DGN  
NGQ  
8
8
8
8
8
8
250  
3500  
1000  
250  
178.0  
330.0  
178.0  
178.0  
330.0  
178.0  
12.4  
12.4  
12.4  
12.4  
12.4  
12.4  
5.3  
5.3  
5.3  
5.3  
5.3  
3.3  
3.4  
3.4  
3.4  
3.4  
3.4  
3.3  
1.4  
1.4  
1.4  
1.4  
1.4  
1.0  
8.0  
8.0  
8.0  
8.0  
8.0  
8.0  
12.0  
12.0  
12.0  
12.0  
12.0  
12.0  
Q1  
Q1  
Q1  
Q1  
Q1  
Q1  
MSOP-  
Power  
PAD  
MSOP-  
Power  
PAD  
MSOP-  
Power  
PAD  
MSOP-  
Power  
PAD  
3500  
1000  
WSON  
Pack Materials-Page 1  
PACKAGE MATERIALS INFORMATION  
www.ti.com  
11-Oct-2013  
Device  
Package Package Pins  
Type Drawing  
SPQ  
Reel  
Reel  
A0  
B0  
K0  
P1  
W
Pin1  
Diameter Width (mm) (mm) (mm) (mm) (mm) Quadrant  
(mm) W1 (mm)  
LM25085SDE/NOPB  
LM25085SDX/NOPB  
WSON  
WSON  
NGQ  
NGQ  
8
8
250  
178.0  
330.0  
12.4  
12.4  
3.3  
3.3  
3.3  
3.3  
1.0  
1.0  
8.0  
8.0  
12.0  
12.0  
Q1  
Q1  
4500  
*All dimensions are nominal  
Device  
Package Type Package Drawing Pins  
SPQ  
Length (mm) Width (mm) Height (mm)  
LM25085MM/NOPB  
LM25085MME/NOPB  
LM25085MMX/NOPB  
LM25085MY/NOPB  
LM25085MYE/NOPB  
LM25085MYX/NOPB  
LM25085QMY/NOPB  
VSSOP  
DGK  
DGK  
DGK  
DGN  
DGN  
DGN  
DGN  
DGN  
DGN  
NGQ  
NGQ  
NGQ  
8
8
8
8
8
8
8
8
8
8
8
8
1000  
250  
210.0  
210.0  
367.0  
210.0  
210.0  
367.0  
210.0  
210.0  
367.0  
210.0  
210.0  
367.0  
185.0  
185.0  
367.0  
185.0  
185.0  
367.0  
185.0  
185.0  
367.0  
185.0  
185.0  
367.0  
35.0  
35.0  
35.0  
35.0  
35.0  
35.0  
35.0  
35.0  
35.0  
35.0  
35.0  
35.0  
VSSOP  
VSSOP  
3500  
1000  
250  
MSOP-PowerPAD  
MSOP-PowerPAD  
MSOP-PowerPAD  
MSOP-PowerPAD  
3500  
1000  
250  
LM25085QMYE/NOPB MSOP-PowerPAD  
LM25085QMYX/NOPB MSOP-PowerPAD  
3500  
1000  
250  
LM25085SD/NOPB  
LM25085SDE/NOPB  
LM25085SDX/NOPB  
WSON  
WSON  
WSON  
4500  
Pack Materials-Page 2  
MECHANICAL DATA  
DGN0008A  
MUY08A (Rev A)  
BOTTOM VIEW  
www.ti.com  
MECHANICAL DATA  
NGQ0008A  
SDA08A (Rev A)  
www.ti.com  
IMPORTANT NOTICE  
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